CN111554715A - Display panel and manufacturing method thereof - Google Patents

Display panel and manufacturing method thereof Download PDF

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Publication number
CN111554715A
CN111554715A CN202010404362.2A CN202010404362A CN111554715A CN 111554715 A CN111554715 A CN 111554715A CN 202010404362 A CN202010404362 A CN 202010404362A CN 111554715 A CN111554715 A CN 111554715A
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electrode
display panel
light
substrate
layer
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温梦阳
王纯阳
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BOE Technology Group Co Ltd
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BOE Technology Group Co Ltd
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Priority to CN202010404362.2A priority Critical patent/CN111554715A/en
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10OLED displays
    • H10K59/12Active-matrix OLED [AMOLED] displays
    • H10K59/124Insulating layers formed between TFT elements and OLED elements
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/80Constructional details
    • H10K50/805Electrodes
    • H10K50/81Anodes
    • H10K50/813Anodes characterised by their shape
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/80Constructional details
    • H10K50/805Electrodes
    • H10K50/82Cathodes
    • H10K50/822Cathodes characterised by their shape
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/80Constructional details
    • H10K50/85Arrangements for extracting light from the devices
    • H10K50/856Arrangements for extracting light from the devices comprising reflective means
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10OLED displays
    • H10K59/12Active-matrix OLED [AMOLED] displays
    • H10K59/1201Manufacture or treatment

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

The invention provides a display panel and a manufacturing method thereof, wherein the display panel comprises: the device comprises a substrate and a planarization layer, wherein one side of the planarization layer, which is far away from the substrate, is provided with a plurality of pixel structures which are arranged in an array manner, and each pixel structure comprises: the light-emitting diode comprises a first electrode, a second electrode and a light-emitting layer positioned between the first electrode and the second electrode; a plurality of occupation bulges are arranged between the planarization layer and the pixel structure, so that the pixel structure is uneven. According to the embodiment of the invention, on one hand, the interface between the pixel structure and the adjacent layer becomes uneven, and light is reflected back and forth, so that some incident angles meeting total reflection no longer meet the total reflection condition, and can be emitted out, and the light extraction loss of a waveguide mode can be improved; and on the other hand, the surface of the electrode is uneven, so that the light extraction loss of a surface plasma mode near the electrode can be improved, and the light extraction efficiency is improved. The light extraction efficiency is improved, and meanwhile, the uniformity of the light extraction direction can be improved, and the problem of color cast under different viewing angles is solved.

Description

Display panel and manufacturing method thereof
Technical Field
The invention relates to the technical field of display equipment, in particular to a display panel and a manufacturing method thereof.
Background
Organic Light-Emitting diodes (OLEDs) have the advantages of wide viewing angle, fast response, wide color gamut, etc. when being used as display devices, and are the mainstream development trend of next generation display technologies.
The light emitting principle of the OLED device is as follows: electrons and holes are respectively injected into the organic functional layer from the cathode and the anode of the device, are compounded in the 'luminous layer' and convert electric energy into light energy in a luminous radiation mode to be emitted out of the device. The OLED is taken as a self-luminous device, and has high attraction in the field of outdoor display devices such as smart phones and vehicles due to the excellent electroluminescent property of the OLED.
Generally, OLED devices are limited by high index of refraction components, with light extraction efficiencies of only around 20%, with about 80% of the light being confined within the device and ultimately absorbed. Therefore, the improvement of the light extraction efficiency of the OLED device has been a research direction that has been paid attention to by researchers.
Disclosure of Invention
The invention provides a display panel and a manufacturing method thereof, which aim to solve the defects in the related art.
To achieve the above object, a first aspect of embodiments of the present invention provides a display panel, including: the pixel structure comprises a substrate and a planarization layer, wherein one side of the planarization layer, which is far away from the substrate, is provided with a plurality of pixel structures arranged in an array manner, and each pixel structure comprises: a first electrode, a second electrode, a light emitting layer between the first electrode and the second electrode; a plurality of occupation bulges are arranged between the planarization layer and the pixel structure, so that the pixel structure is rugged.
Optionally, the shape and size of each of the placeholder bumps are the same.
Optionally, the occupying protrusions are distributed in a scattering shape, a strip shape or a grid shape.
Optionally, the material of the placeholder bumps is an insulating material.
Optionally, the placeholder bumps are uniform in thickness throughout.
Optionally, the placeholder bumps have a thick middle region and a thin edge region.
Optionally, the cross-section of the placeholder protrusion is rectangular, trapezoidal or semicircular.
Optionally, the first electrode is close to the substrate and the second electrode is far from the substrate; the display panel is of a bottom light-emitting structure, the first electrode is a light-transmitting anode, and the second electrode is a light-reflecting cathode; or the display panel is of a top light-emitting structure, the first electrode is a light-reflecting anode, and the second electrode is a light-transmitting cathode.
Optionally, the light emitting manner of the pixel structure is an active driving light emitting manner, and a pixel driving circuit is disposed between the substrate and the planarization layer.
A second aspect of the embodiments of the present invention provides a method for manufacturing a display panel, including:
providing a substrate, wherein a planarization layer is arranged on the surface of the substrate, and the surface of the planarization layer is provided with a plurality of pixel light emitting areas arranged in an array manner;
forming an isolation column in each pixel light emitting area;
depositing an occupying material layer, wherein the occupying material layer is partitioned by the isolation columns to form a plurality of occupying bulges;
removing the isolation pillars to expose the planarization layer;
forming a pixel structure on a side of the planarization layer and the placeholder bumps away from the substrate, the pixel structure comprising: the pixel structure comprises a first electrode, a second electrode and a light-emitting layer positioned between the first electrode and the second electrode, wherein the pixel structure is uneven.
Optionally, the isolation columns are distributed in a grid shape, and the occupied protrusions formed by the partitions are distributed in a scattered shape; or the isolation columns are distributed in a strip shape, and the occupied bulges formed by the partition are distributed in a strip shape; or the isolation columns are distributed in a scattered manner, and the occupied bulges formed by the partition are distributed in a grid manner.
Optionally, the cross section of the isolation column is in an inverted trapezoid shape or a T-shape.
Optionally, the material of the isolation column comprises a thermal separation material, and the isolation column is removed by heating.
Optionally, the material of the isolation column comprises a UV separation material, and the isolation column is removed by ultraviolet light irradiation.
According to the embodiment of the invention, the pixel structure on the planarization layer is uneven by utilizing the plurality of occupied protrusions on the planarization layer, so that on one hand, the interface between the pixel structure and the adjacent layer becomes uneven, light is reflected back and forth, some incident angles meeting total reflection no longer meet the total reflection condition, the incident angles can be emitted, and the light extraction loss of a waveguide mode can be improved; and on the other hand, the surface of the electrode is uneven, so that the light extraction loss of a surface plasma mode near the electrode can be improved, and the light extraction efficiency is improved. The light extraction efficiency is improved, and meanwhile, the uniformity of the light extraction direction can be improved, and the problem of color cast under different viewing angles is solved.
It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the invention, as claimed.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the invention and together with the description, serve to explain the principles of the invention.
Fig. 1 is a schematic cross-sectional view of a display panel according to an embodiment of the present invention;
FIG. 2 is a schematic top view of the planarization layer and the placeholder bumps of FIG. 1;
FIG. 3 is a flow chart of a method of fabricating the display panel of FIG. 1;
FIGS. 4-8 are schematic intermediate structures corresponding to the flow chart of FIG. 3;
FIG. 9 is a schematic diagram illustrating a top view structure of a planarization layer and placeholder bumps in a display panel according to another embodiment of the present invention;
FIG. 10 is a schematic diagram illustrating a top view structure of a planarization layer and placeholder bumps in a display panel according to still another embodiment of the present invention;
fig. 11 is a schematic cross-sectional structure diagram of a display panel according to still another embodiment of the present invention.
List of reference numerals:
display panel 1 substrate 10
Planarizing layer PLN pixel structure 12
First electrode 121 second electrode 122
Luminescent layer 123 placeholder bump 13
PDL transistor T for pixel definition layer
Gate 111 gate insulation layer 112
Active layer 113 source electrode 114a
Drain 114b passivation layer PVX
Isolation column 20 of pixel light emitting region 11a
The partition part 20a and the support part 20b
Detailed Description
Reference will now be made in detail to the exemplary embodiments, examples of which are illustrated in the accompanying drawings. When the following description refers to the accompanying drawings, like numbers in different drawings represent the same or similar elements unless otherwise indicated. The embodiments described in the following exemplary embodiments do not represent all embodiments consistent with the present invention. Rather, they are merely examples of apparatus and methods consistent with certain aspects of the invention, as detailed in the appended claims.
Fig. 1 is a schematic cross-sectional view of a display panel according to an embodiment of the present invention. Fig. 2 is a schematic top view of the planarization layer and the placeholder bumps of fig. 1.
Referring to fig. 1 and 2, a display panel 1 includes:
a substrate 10 and a planarization layer PLN, wherein a side of the planarization layer PLN away from the substrate 10 has a plurality of pixel structures 12 arranged in an array, and the pixel structures 12 include: a first electrode 121, a second electrode 122, a light emitting layer 123 between the first electrode 121 and the second electrode 122; a plurality of placeholder bumps 13 are arranged between the planarization layer PLN and the pixel structure 12, so that the pixel structure 12 is rugged.
The substrate 10 may be a flexible substrate or a hard substrate. The material of the flexible substrate may be polyimide and the material of the rigid substrate may be glass.
In the pixel structure 12, the first electrode 121 is close to the substrate 10, and the second electrode 122 is far from the substrate 10. The first electrode 121 may be an anode, and the second electrode 122 may be a cathode. In other embodiments, the first electrode 121 may also be a cathode, and the second electrode 122 may be an anode.
In this embodiment, the display panel 1 is a top emission structure, and thus the first electrode 121 is a reflective anode and the second electrode 122 is a transparent cathode.
The planarization layer PLN and the first electrode 121 have a pixel defining layer PDL on a side away from the substrate 10. The pixel defining layer PDL has an opening in which the light emitting layer 123 is located to define a light emitting region of the pixel structure 12.
In this embodiment, the light emitting layer 123 may be an organic light emitting layer (OLED). The pixel structure 12 may be an Active Matrix OLED (AMOLED), and thus a pixel driving circuit is disposed between the substrate 10 and the planarization layer PLN.
The active driving light emitting OLED, also called active driving light emitting OLED, uses a transistor array to control each pixel structure 12 to emit light, and each pixel structure 12 can continuously emit light.
The pixel driving circuit may include several transistors T. The transistor T may include: a gate electrode 111, a gate insulating layer 112, an active layer 113, a source electrode 114a, and a drain electrode 114 b. The present embodiment does not limit the specific circuit structure of the pixel driving circuit and the specific structure of the transistor T.
The surface of the transistor T may be covered with a passivation layer PVX.
The drain 114b of the transistor T is connected to the first electrode 121 for supplying a driving voltage to the first electrode 121.
The second electrode 122 of each pixel structure 12 can be connected as a one-sided electrode to facilitate voltage application.
The side of each pixel structure 12 away from the substrate 10 may be sequentially provided with an encapsulation layer and a light extraction layer. The encapsulation layer is, for example, a thin film encapsulation layer (TFE), and includes an overlapped structure of several organic layers and inorganic layers. The refractive index of the encapsulation layer is smaller than that of the second electrode 122, and the refractive index of the light extraction layer is smaller than that of the encapsulation layer.
The material of the placeholder bumps 13 may be an insulating material, such as silicon nitride, silicon dioxide, etc. In some embodiments, the material of the placeholder bumps 13 may also be a conductive material.
Referring to fig. 1, in the present embodiment, the placeholder protrusions 13 have equal thickness at the positions, and the cross sections are rectangular. Furthermore, the shape and size of each placeholder protrusion 13 is the same. In other embodiments, the shape and/or size of each placeholder protrusion 13 may be different.
Referring to fig. 2, in the present embodiment, the occupied-place protrusions 13 between the planarization layer PLN and the first electrode 121 are distributed in a scattering manner.
Since the occupied bumps 13 are distributed in a scattered manner, the upper surface of the first electrode 121 is uneven, and the upper surfaces of the light emitting layer 123 and the second electrode 122 are uneven. When a driving voltage is applied between the first electrode 121 and the second electrode 122, the light emitting layer 123 emits light, and the uneven surface can reflect light back and forth on the interface between the second electrode 122 and the encapsulation layer, relative to the plane, so that some incident angles meeting total reflection no longer meet the total reflection condition, and can be emitted, and the light extraction loss of the waveguide mode can be improved. When the interface between the package layer and the light extraction layer is uneven, the light extraction loss in the waveguide mode can be further improved.
On the other hand, the surface of the second electrode 122 is uneven, and the light extraction loss of the surface plasmon mode near the electrode can be improved, thereby improving the light extraction efficiency.
In some embodiments, the display panel 1 may also be a bottom emission structure, the first electrode 121 is a light-transmitting anode, and the second electrode 122 is a light-reflecting cathode. At this time, light extraction loss of the waveguide mode occurs at the interface of the first electrode 121 and the planarization layer PLN. The refractive index of the first electrode 121 is greater than that of the planarization layer PLN. The uneven interface between the first electrode 121 and the planarization layer PLN can reflect light back and forth, so that some incident angles meeting total reflection no longer meet the total reflection condition, and can be emitted, thereby improving the light-emitting loss of the waveguide mode.
On the other hand, the surface of the first electrode 121 is uneven, and light extraction efficiency is improved by improving light extraction loss in a surface plasmon mode near the electrode. The light extraction efficiency is improved, and meanwhile, the uniformity of the light extraction direction can be improved, and the problem of color cast under different viewing angles is solved.
In the bottom emission structure, the orthographic projection of the pixel driving circuit on the plane of the substrate 10 is preferably staggered with the orthographic projection of the light emitting area of the pixel structure 12 on the plane of the substrate 10, so as to improve the light transmittance.
In some embodiments, the pixel structure 12 may also be a passive-driven light-emitting OLED (passivematrix OLED). The passive-drive light-emitting method, also called passive-drive light-emitting method, simply forms a matrix of anodes and cathodes, and illuminates the pixels at the intersections of rows and columns in the array by a scanning method, and each pixel structure 12 operates in a short-pulse mode and emits light with high brightness instantaneously. At this time, there is no pixel driving circuit between the substrate 10 and the planarization layer PLN.
For the display panel 1, an embodiment of the invention further provides a manufacturing method. Fig. 3 is a flow chart of a method of fabrication. Fig. 4 to 8 are intermediate schematic diagrams corresponding to the flow chart in fig. 3.
First, referring to step S1 in fig. 3, and as shown in fig. 1 and 4, a substrate 10 is provided, a planarization layer PLN is disposed on a surface of the substrate 10, and the surface of the planarization layer PLN has a plurality of pixel light emitting areas 11a arranged in an array.
The pixel light emitting region 11a may correspond to a region where the light emitting layer 123 is located, or may correspond to a region where the first electrode 121 is located.
For the pixel structure 12 of the active driving light emitting type, a pixel driving circuit is disposed between the substrate 10 and the planarization layer PLN. For the passive-driven light-emitting pixel structure 12, no pixel driving circuit is disposed between the substrate 10 and the planarization layer PLN.
Next, referring to step S2 in fig. 3, fig. 5 and fig. 6, the isolation pillar 20 is formed in each pixel light emitting region 11 a. Wherein FIG. 5 is a top view of an isolation column; fig. 6(a) and 6(b) are cross-sectional views taken along line AA in fig. 5, respectively showing two shapes of the separator.
Referring to fig. 6(a), the isolation pillar 20 may have a T-shaped cross section including a partition portion 20a and a support portion 20 b. The orthographic projection of the supporting part 20b on the substrate 10 is in the orthographic projection of the partition part 20a on the substrate 10, and the same side edges of the partition part 20a and the supporting part 20b are not aligned on the orthographic projection of the substrate 10. In other words, the partition 20a has a floating section.
In one embodiment, the material of the partition 20a is different from the material of the support 20 b. For example, a) the partitions 20a are made of an inorganic material, such as silicon nitride, silicon dioxide, etc., and the supports 20b are made of an organic material, such as a thermal release material or a UV release material. The thermal release material is a material which has viscosity after being cured and can be made to lose viscosity by heating. The UV release material is a material which has tackiness after curing and can be made to lose tackiness by irradiation of ultraviolet light. And, for example, b) the partitions 20a are a first inorganic material, such as silicon nitride, and the supports 20b are a second inorganic material, such as silicon dioxide. a) The benefits of the scheme over the b) scheme are: when the isolation column 20 is removed, the method is simple and reliable, no moisture is introduced, a drying process can be omitted, and the manufacturing efficiency is high.
During manufacturing, the method can comprise the following steps: firstly, forming two material layers in a pixel light emitting area 11a, and patterning the material layer far away from a substrate 10 to form a partition part 20 a; and then, the partition part 20a is used as a mask, the material layer close to the substrate 10 is etched in a dry etching or wet etching way, and the dry etching or wet etching is a chemical reaction, so that the dry etching or wet etching not only reacts with the material layer close to the substrate 10 in the direction vertical to the substrate 10, but also reacts in the direction parallel to the substrate 10, and the partition part 20a forms a suspension section.
In one embodiment, the material of the partition 20a is the same as the material of the support 20 b. For example, both are negative tone photoresists, the area of the exposed negative tone photoresist near the exposure source is larger than the area of the exposed negative tone photoresist far from the exposure source, so that the area of the remaining negative tone photoresist area near the exposure source is larger than the area of the remaining negative tone photoresist area far from the exposure source.
Referring to fig. 6(b), the cross-section of the separator column 20 may be an inverted trapezoid. The material of the isolation column 20 may be an organic material or an inorganic material. The inorganic material is, for example, silicon nitride, silicon dioxide, or the like, and the organic material is, for example, a thermal separation material or a UV separation material. In the manufacturing process, the method comprises the following steps: firstly, forming a sacrificial layer in a pixel light emitting area 11a, and etching the sacrificial layer by a dry method to form a plurality of openings with large tops and small bottoms; then filling organic material or inorganic material into the opening; thereafter, the sacrificial layer is removed, and the inverted trapezoidal isolation pillars 20 with large tops and small openings are remained. If the material is organic material, the sacrificial layer is removed after curing.
In this embodiment, referring to fig. 5, the isolation pillars 20 are distributed in a grid shape. The size and spacing of the pillars 20 are the same. In some embodiments, the size and/or spacing of the spacers 20 may also be different.
Next, referring to step S3 in fig. 3 and fig. 7, a placeholder material layer is deposited, and the placeholder material layer is isolated by the isolation pillars 20 to form a plurality of placeholder bumps 13.
Referring to fig. 7, a placeholder material layer is located above the spacer pillar 20 and between adjacent spacer pillars 20. Because the top of the isolation column 20 is large and the bottom is small, the thickness of the space occupying material layer is smaller than the height of the supporting part 20b, and therefore the space occupying material layer can be automatically isolated.
The material of the placeholder material layer may be an insulating material, such as silicon nitride, silicon dioxide, etc. In some embodiments, the material of the placeholder material layer may also be a conductive material.
Due to the grid-shaped distribution of the isolation columns 20, the occupied protrusions 13 are scattered. In addition, since the size and the pitch of the isolation pillars 20 are the same, the shape and the size of the placeholder bumps 13 are the same. In the case where the size and/or pitch of the isolation pillars 20 are different, the shape and/or size of the placeholder bumps 13 formed are different.
It is understood that the spacer pillars 20 shown in fig. 6(b) may also separate the placeholder material layer to form a plurality of placeholder bumps 13.
Thereafter, referring to step S4 in fig. 3 and fig. 8, the isolation pillars 20 are removed to expose the planarization layer PLN.
In the case where the cross section of the isolation pillar 20 is T-shaped: if the material of the support 20b is a thermal release material, it is removed by heating to lose its adhesiveness. If the material of the support 20b is a UV release material, it is removed by ultraviolet irradiation. If the material of the support portion 20b is a negative photoresist, it is removed by ashing. If the material of the support portion 20b is an inorganic material, such as silicon nitride, hot phosphoric acid is used for removal, and hydrofluoric acid is used for removal if silicon dioxide is used. It should be noted that the material of the supporting portion 20b is different from the material of the placeholder material layer. It can be seen that when the support portion 20b is removed, the partitions 20a thereon are also separated along with the placeholder material layer.
In the case where the cross section of the separation column 20 is an inverted trapezoid: if the material of the isolation column 20 is a thermal separation material, it is removed by heating to lose its viscosity. If the material of the isolation column 20 is a UV separation material, the UV separation material is removed by losing the viscosity through ultraviolet irradiation. If the material of the isolation column 20 is a negative photoresist, the material is removed by ashing. If the material of the isolation pillar 20 is an inorganic material, such as silicon nitride, hot phosphoric acid is used for removal, and hydrofluoric acid is used for removal if silicon dioxide is used. It should be noted that the material of the isolation pillars 20 is different from the material of the placeholder material layer. When the isolation pillar 20 is removed, the spacer material layer thereon is also removed.
Next, referring to step S5 in fig. 3 and fig. 1, a pixel structure 12 is formed on the planarization layer PLN and the side of the placeholder bump 13 away from the substrate 10, where the pixel structure 12 includes: the pixel structure 12 includes a first electrode 121, a second electrode 122, and a light emitting layer 123 between the first electrode 121 and the second electrode 122.
Specifically, the first electrode 121 may be formed by depositing a whole electrode material layer and then patterning the whole electrode material layer to form the first electrode 121 of each pixel structure 12.
Forming a pixel definition layer PDL on the first electrode 121 and the side of the planarization layer PLN away from the substrate 10, forming an opening in the pixel definition layer PDL, and evaporating a light emitting layer 123 in the opening; then, the entire second electrode 122 is formed on the light-emitting layer 123 and the pixel defining layer PDL on the side away from the substrate 10.
In this embodiment, the first electrode 121 is a reflective anode, and the second electrode 122 is a transparent cathode. Thus, the first electrode 121 is made of a light reflective material, such as metallic silver and/or metallic aluminum; the second electrode 122 is made of a light-transmitting material, such as ITO.
In some embodiments, the first electrode 121 may also be a light-transmissive anode, and the second electrode 122 may be a light-reflective cathode.
In some embodiments, an encapsulation layer and a light extraction layer may be sequentially formed on the entire surface of the second electrode 122.
For the display panel 1 in which the pixel driving circuit is disposed between the substrate 10 and the planarization layer PLN, compared with the method for forming the space occupying protrusion 13 on the surface of the planarization layer PLN by using the imprinting method, the method can prevent the inorganic layer in the pixel driving circuit from being stressed, even broken, and affecting the performance.
Fig. 9 is a schematic top view diagram of a planarization layer and placeholder bumps in a display panel according to another embodiment of the present invention. Referring to fig. 9, the display panel and the manufacturing method thereof in the present embodiment are substantially the same as the display panel 1 and the manufacturing method thereof in the embodiment of fig. 1 to 8, and the differences are only: the space occupying protrusions 13 are distributed in a strip shape.
Accordingly, in the manufacturing method, the separation pillars 20 formed in step S2 are arranged in stripes.
The strip-shaped space occupying protrusions 13 can also form uneven pixel structures 12, so that the light extraction efficiency of the display panel is improved, and the color cast is improved.
Fig. 10 is a schematic top view diagram of a planarization layer and placeholder bumps in a display panel according to still another embodiment of the present invention. Referring to fig. 10, the display panel and the manufacturing method thereof in the present embodiment are substantially the same as the display panel 1 and the manufacturing method thereof in the embodiment of fig. 1 to 8, and the differences are only: the placeholder protrusions 13 are distributed in a grid-like manner, i.e. comprise stripes extending in multiple directions.
Accordingly, in the manufacturing method, the separation columns 20 formed in step S2 are distributed in a scattered manner.
The grid-shaped occupying protrusions 13 can also form the rugged pixel structure 12, thereby improving the light extraction efficiency of the display panel and improving the color shift.
Fig. 11 is a schematic cross-sectional structure diagram of a display panel according to still another embodiment of the present invention. Referring to fig. 11, the display panel and the manufacturing method thereof in the present embodiment are substantially the same as the display panel 1 and the manufacturing method thereof in the embodiment of fig. 1 to 10, and the differences are only: the placeholder bumps 13 are thick in the middle area and thin in the edge area.
In particular, the occupying projection 13 may have a trapezoidal or semicircular cross section.
Accordingly, in the manufacturing method, the placeholder bumps 13 with thick middle regions and thin edge regions can be deposited by increasing the density of the isolation pillars 20 formed in step S2 and reducing the distance between adjacent isolation pillars 20.
Compared with the occupation protrusions 13 with the same thickness, the occupation protrusions 13 of the present embodiment can provide more reflection surfaces and reflection angles at the interface between the pixel structure 12 and the adjacent layer thereof, thereby further improving the light extraction efficiency of the display panel and improving the color shift.
Based on the display panel 1, an embodiment of the present invention further provides a display device including any one of the display panels 1. The display device may be: any product or component with a display function, such as electronic paper, a mobile phone, a tablet computer, a television, a notebook computer, a digital photo frame, a navigator and the like.
It is noted that in the drawings, the sizes of layers and regions may be exaggerated for clarity of illustration. Also, it will be understood that when an element or layer is referred to as being "on" another element or layer, it can be directly on the other element or layer or intervening layers may also be present. In addition, it will be understood that when an element or layer is referred to as being "under" another element or layer, it can be directly under the other element or intervening layers or elements may also be present. In addition, it will also be understood that when a layer or element is referred to as being "between" two layers or elements, it can be the only layer between the two layers or elements, or more than one intermediate layer or element may also be present. Like reference numerals refer to like elements throughout.
In the present invention, the terms "first" and "second" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
Other embodiments of the invention will be apparent to those skilled in the art from consideration of the specification and practice of the disclosure disclosed herein. This invention is intended to cover any variations, uses, or adaptations of the invention following, in general, the principles of the invention and including such departures from the present disclosure as come within known or customary practice within the art to which the invention pertains. It is intended that the specification and examples be considered as exemplary only, with a true scope and spirit of the invention being indicated by the following claims.
It will be understood that the invention is not limited to the precise arrangements described above and shown in the drawings and that various modifications and changes may be made without departing from the scope thereof. The scope of the invention is limited only by the appended claims.

Claims (10)

1. A display panel, comprising: the pixel structure comprises a substrate and a planarization layer, wherein one side of the planarization layer, which is far away from the substrate, is provided with a plurality of pixel structures arranged in an array manner, and each pixel structure comprises: a first electrode, a second electrode, a light emitting layer between the first electrode and the second electrode; a plurality of occupation bulges are arranged between the planarization layer and the pixel structure, so that the pixel structure is rugged.
2. The display panel of claim 1, wherein the shape and size of each placeholder bump is the same; and/or the space occupying bulges are distributed in a scattered manner, a strip manner or a grid manner.
3. The display panel of claim 1, wherein the material of the placeholder bumps is an insulating material.
4. The display panel of claim 1, wherein the placeholder protrusions are uniform in thickness throughout; or the middle area of the occupying protrusion is thick, and the edge area of the occupying protrusion is thin.
5. The display panel of claim 4, wherein the placeholder protrusions are rectangular, trapezoidal or semicircular in cross-section.
6. The display panel according to claim 1, wherein the first electrode is close to the substrate, and the second electrode is far from the substrate; the display panel is of a bottom light-emitting structure, the first electrode is a light-transmitting anode, and the second electrode is a light-reflecting cathode; or the display panel is of a top light-emitting structure, the first electrode is a light-reflecting anode, and the second electrode is a light-transmitting cathode.
7. The display panel of claim 1, wherein the pixel structure emits light in an active driving manner, and a pixel driving circuit is disposed between the substrate and the planarization layer.
8. A method for manufacturing a display panel is characterized by comprising the following steps:
providing a substrate, wherein a planarization layer is arranged on the surface of the substrate, and the surface of the planarization layer is provided with a plurality of pixel light emitting areas arranged in an array manner;
forming an isolation column in each pixel light emitting area;
depositing an occupying material layer, wherein the occupying material layer is partitioned by the isolation columns to form a plurality of occupying bulges;
removing the isolation pillars to expose the planarization layer;
forming a pixel structure on a side of the planarization layer and the placeholder bumps away from the substrate, the pixel structure comprising: the pixel structure comprises a first electrode, a second electrode and a light-emitting layer positioned between the first electrode and the second electrode, wherein the pixel structure is uneven.
9. The method according to claim 8, wherein the spacers are distributed in a grid pattern, and the occupied-place protrusions formed by the partitions are distributed in a scattered pattern; or the isolation columns are distributed in a strip shape, and the occupied bulges formed by the partition are distributed in a strip shape; or the isolation columns are distributed in a scattered manner, and the occupied bulges formed by the partition are distributed in a grid manner.
10. The method for manufacturing a display panel according to claim 8, wherein the cross section of the barrier pillar is in an inverted trapezoid shape or a T-shape; and/or
The material of the isolation column comprises a thermal separation material, and the isolation column is removed by heating; or the material of the isolation column comprises a UV separation material, and the isolation column is removed by ultraviolet irradiation.
CN202010404362.2A 2020-05-13 2020-05-13 Display panel and manufacturing method thereof Pending CN111554715A (en)

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Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112234086A (en) * 2020-10-15 2021-01-15 京东方科技集团股份有限公司 Preparation method of display panel
CN112349869A (en) * 2021-01-06 2021-02-09 浙江宏禧科技有限公司 Method for preparing OLED anode by nanoimprint lithography
CN112582567A (en) * 2020-11-27 2021-03-30 固安翌光科技有限公司 Organic electroluminescent device and preparation method thereof
CN112670325A (en) * 2020-12-23 2021-04-16 湖北长江新型显示产业创新中心有限公司 Display panel and display device
CN113241420A (en) * 2021-06-15 2021-08-10 京东方科技集团股份有限公司 Display module, preparation method of display module and display device
CN114122292A (en) * 2021-11-15 2022-03-01 惠州华星光电显示有限公司 OLED display panel and electronic equipment
WO2022127416A1 (en) * 2020-12-14 2022-06-23 Oppo广东移动通信有限公司 Display panel and display apparatus thereof, head-mounted display device, and display uniformity calibration method
WO2023039964A1 (en) * 2021-09-16 2023-03-23 北京载诚科技有限公司 Display panel and vehicle-mounted display apparatus
WO2024103751A1 (en) * 2022-11-15 2024-05-23 武汉华星光电半导体显示技术有限公司 Display panel
CN112234086B (en) * 2020-10-15 2024-07-16 京东方科技集团股份有限公司 Method for manufacturing display panel

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008218329A (en) * 2007-03-07 2008-09-18 Toshiba Matsushita Display Technology Co Ltd El display device and method of manufacturing the same
CN107658332A (en) * 2017-10-25 2018-02-02 京东方科技集团股份有限公司 A kind of display panel, display device and preparation method
US20190115561A1 (en) * 2017-10-13 2019-04-18 Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd. A method of manufacturing an oled panel and an oled panel
CN109841651A (en) * 2017-11-24 2019-06-04 三星显示有限公司 Display device and its manufacturing method
CN110246884A (en) * 2019-06-25 2019-09-17 京东方科技集团股份有限公司 A kind of preparation method and array substrate, display panel of array substrate

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008218329A (en) * 2007-03-07 2008-09-18 Toshiba Matsushita Display Technology Co Ltd El display device and method of manufacturing the same
US20190115561A1 (en) * 2017-10-13 2019-04-18 Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd. A method of manufacturing an oled panel and an oled panel
CN107658332A (en) * 2017-10-25 2018-02-02 京东方科技集团股份有限公司 A kind of display panel, display device and preparation method
CN109841651A (en) * 2017-11-24 2019-06-04 三星显示有限公司 Display device and its manufacturing method
CN110246884A (en) * 2019-06-25 2019-09-17 京东方科技集团股份有限公司 A kind of preparation method and array substrate, display panel of array substrate

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112234086B (en) * 2020-10-15 2024-07-16 京东方科技集团股份有限公司 Method for manufacturing display panel
CN112234086A (en) * 2020-10-15 2021-01-15 京东方科技集团股份有限公司 Preparation method of display panel
US12016205B2 (en) 2020-10-15 2024-06-18 Boe Technology Group Co., Ltd. Manufacturing method for display panel, display panel and display device
CN112582567A (en) * 2020-11-27 2021-03-30 固安翌光科技有限公司 Organic electroluminescent device and preparation method thereof
CN112582567B (en) * 2020-11-27 2022-11-04 固安翌光科技有限公司 Organic electroluminescent device and preparation method thereof
WO2022127416A1 (en) * 2020-12-14 2022-06-23 Oppo广东移动通信有限公司 Display panel and display apparatus thereof, head-mounted display device, and display uniformity calibration method
CN112670325A (en) * 2020-12-23 2021-04-16 湖北长江新型显示产业创新中心有限公司 Display panel and display device
CN112349869A (en) * 2021-01-06 2021-02-09 浙江宏禧科技有限公司 Method for preparing OLED anode by nanoimprint lithography
CN113241420A (en) * 2021-06-15 2021-08-10 京东方科技集团股份有限公司 Display module, preparation method of display module and display device
WO2023039964A1 (en) * 2021-09-16 2023-03-23 北京载诚科技有限公司 Display panel and vehicle-mounted display apparatus
CN114122292A (en) * 2021-11-15 2022-03-01 惠州华星光电显示有限公司 OLED display panel and electronic equipment
WO2023082326A1 (en) * 2021-11-15 2023-05-19 惠州华星光电显示有限公司 Oled display panel and electronic device
WO2024103751A1 (en) * 2022-11-15 2024-05-23 武汉华星光电半导体显示技术有限公司 Display panel

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