CN1592525B - 有机发光元件 - Google Patents
有机发光元件 Download PDFInfo
- Publication number
- CN1592525B CN1592525B CN2004100644325A CN200410064432A CN1592525B CN 1592525 B CN1592525 B CN 1592525B CN 2004100644325 A CN2004100644325 A CN 2004100644325A CN 200410064432 A CN200410064432 A CN 200410064432A CN 1592525 B CN1592525 B CN 1592525B
- Authority
- CN
- China
- Prior art keywords
- mentioned
- layer
- film
- substrate
- light emitting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 229910052751 metal Inorganic materials 0.000 claims abstract description 30
- 239000002184 metal Substances 0.000 claims abstract description 30
- 238000000576 coating method Methods 0.000 claims description 100
- 239000011248 coating agent Substances 0.000 claims description 97
- 239000000758 substrate Substances 0.000 claims description 50
- 239000012528 membrane Substances 0.000 claims description 34
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 23
- 230000003287 optical effect Effects 0.000 claims description 16
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 13
- 230000005281 excited state Effects 0.000 claims description 13
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 13
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 12
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 10
- 229910052804 chromium Inorganic materials 0.000 claims description 10
- 239000011651 chromium Substances 0.000 claims description 10
- 230000015572 biosynthetic process Effects 0.000 claims description 8
- 239000000463 material Substances 0.000 abstract description 12
- 238000002347 injection Methods 0.000 abstract description 10
- 239000007924 injection Substances 0.000 abstract description 10
- 230000005284 excitation Effects 0.000 abstract 3
- 230000005525 hole transport Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 153
- 239000010408 film Substances 0.000 description 118
- 229910001512 metal fluoride Inorganic materials 0.000 description 21
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 20
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Chemical compound [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 description 18
- 229910010413 TiO 2 Inorganic materials 0.000 description 15
- 230000000694 effects Effects 0.000 description 14
- 229910004298 SiO 2 Inorganic materials 0.000 description 12
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 9
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 8
- 238000000034 method Methods 0.000 description 8
- 230000004888 barrier function Effects 0.000 description 7
- 239000004411 aluminium Substances 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 6
- 238000010276 construction Methods 0.000 description 6
- 230000008030 elimination Effects 0.000 description 5
- 238000003379 elimination reaction Methods 0.000 description 5
- 239000000377 silicon dioxide Substances 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 4
- 150000001339 alkali metal compounds Chemical class 0.000 description 4
- 238000013461 design Methods 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 230000002779 inactivation Effects 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- VQGHOUODWALEFC-UHFFFAOYSA-N 2-phenylpyridine Chemical compound C1=CC=CC=C1C1=CC=CC=N1 VQGHOUODWALEFC-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- IBHBKWKFFTZAHE-UHFFFAOYSA-N n-[4-[4-(n-naphthalen-1-ylanilino)phenyl]phenyl]-n-phenylnaphthalen-1-amine Chemical compound C1=CC=CC=C1N(C=1C2=CC=CC=C2C=CC=1)C1=CC=C(C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C3=CC=CC=C3C=CC=2)C=C1 IBHBKWKFFTZAHE-UHFFFAOYSA-N 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 230000010363 phase shift Effects 0.000 description 3
- 238000002310 reflectometry Methods 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 3
- 239000011800 void material Substances 0.000 description 3
- 206010003084 Areflexia Diseases 0.000 description 2
- QCCDYNYSHILRDG-UHFFFAOYSA-K cerium(3+);trifluoride Chemical compound [F-].[F-].[F-].[Ce+3] QCCDYNYSHILRDG-UHFFFAOYSA-K 0.000 description 2
- 230000005672 electromagnetic field Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 230000002452 interceptive effect Effects 0.000 description 2
- 239000002932 luster Substances 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- -1 aluminium quinoline Chemical compound 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000000695 excitation spectrum Methods 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 210000004276 hyalin Anatomy 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000010406 interfacial reaction Methods 0.000 description 1
- 229910000765 intermetallic Inorganic materials 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000011514 reflex Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 230000002040 relaxant effect Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/875—Arrangements for extracting light from the devices
- H10K59/878—Arrangements for extracting light from the devices comprising reflective means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
- H10K50/856—Arrangements for extracting light from the devices comprising reflective means
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/22—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of auxiliary dielectric or reflective layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/302—Details of OLEDs of OLED structures
- H10K2102/3023—Direction of light emission
- H10K2102/3026—Top emission
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/302—Details of OLEDs of OLED structures
- H10K2102/3023—Direction of light emission
- H10K2102/3031—Two-side emission, e.g. transparent OLEDs [TOLED]
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
Description
Claims (6)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP303051/2003 | 2003-08-27 | ||
JP2003303051A JP4155569B2 (ja) | 2003-08-27 | 2003-08-27 | 高効率有機発光素子 |
JP94009/2004 | 2004-03-29 | ||
JP2004094009A JP2005285386A (ja) | 2004-03-29 | 2004-03-29 | 有機電界発光素子及びそれを用いた表示装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1592525A CN1592525A (zh) | 2005-03-09 |
CN1592525B true CN1592525B (zh) | 2011-04-06 |
Family
ID=34621848
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2004100644325A Active CN1592525B (zh) | 2003-08-27 | 2004-08-26 | 有机发光元件 |
Country Status (3)
Country | Link |
---|---|
US (1) | US7321197B2 (zh) |
KR (1) | KR100996077B1 (zh) |
CN (1) | CN1592525B (zh) |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8634607B2 (en) * | 2003-09-23 | 2014-01-21 | Cambridge Research & Instrumentation, Inc. | Spectral imaging of biological samples |
US8102111B2 (en) * | 2005-07-15 | 2012-01-24 | Seiko Epson Corporation | Electroluminescence device, method of manufacturing electroluminescence device, and electronic apparatus |
JP2007317591A (ja) * | 2006-05-29 | 2007-12-06 | Seiko Epson Corp | 有機el発光装置および電子機器 |
US7622865B2 (en) * | 2006-06-19 | 2009-11-24 | Seiko Epson Corporation | Light-emitting device, image forming apparatus, display device, and electronic apparatus |
JP2008047340A (ja) * | 2006-08-11 | 2008-02-28 | Dainippon Printing Co Ltd | 有機エレクトロルミネッセンス素子 |
JP2008210665A (ja) * | 2007-02-27 | 2008-09-11 | Canon Inc | 有機発光素子及びそれを用いた表示装置 |
JP4858379B2 (ja) * | 2007-09-18 | 2012-01-18 | セイコーエプソン株式会社 | 発光装置および電子機器 |
US8076838B2 (en) * | 2007-10-31 | 2011-12-13 | Seiko Epson Corporation | Light emitting device |
JP4843627B2 (ja) * | 2008-03-07 | 2011-12-21 | 株式会社 日立ディスプレイズ | 有機発光素子 |
KR101469031B1 (ko) * | 2008-04-16 | 2014-12-05 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 |
TWI398020B (zh) * | 2008-12-01 | 2013-06-01 | Ind Tech Res Inst | 發光裝置 |
JP5312145B2 (ja) * | 2009-03-30 | 2013-10-09 | ユー・ディー・シー アイルランド リミテッド | エレクトロルミネッセンス素子 |
CN101859029A (zh) * | 2010-05-20 | 2010-10-13 | 友达光电股份有限公司 | 立体显示器 |
WO2013042745A1 (ja) * | 2011-09-21 | 2013-03-28 | パナソニック株式会社 | 有機エレクトロルミネッセンス素子 |
WO2014083693A1 (ja) * | 2012-11-30 | 2014-06-05 | パイオニア株式会社 | 発光装置 |
JPWO2014162385A1 (ja) * | 2013-04-01 | 2017-02-16 | パイオニア株式会社 | 発光装置 |
CN103646957B (zh) * | 2013-11-18 | 2015-08-19 | 上海和辉光电有限公司 | 一种oled显示面板以及用于该oled显示面板的蓝光滤除方法 |
CN106340596B (zh) * | 2016-08-31 | 2018-06-05 | 昆山工研院新型平板显示技术中心有限公司 | 有机发光二极体显示面板、显示屏及驱动方法 |
US10777125B2 (en) * | 2017-11-27 | 2020-09-15 | Universal Display Corporation | Multi-mode OLED display |
CN107994125B (zh) * | 2017-11-29 | 2019-10-22 | 京东方科技集团股份有限公司 | 显示背板及其制作方法、显示装置 |
WO2020237432A1 (zh) * | 2019-05-24 | 2020-12-03 | 京东方科技集团股份有限公司 | 有机电致发光显示面板、色偏改善及制备方法、显示装置 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5049780A (en) * | 1988-12-02 | 1991-09-17 | National Research Council Of Canada | Optical interference, electroluminescent device having low reflectance |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3274527B2 (ja) | 1992-09-22 | 2002-04-15 | 株式会社日立製作所 | 有機発光素子とその基板 |
JPH11224786A (ja) | 1998-02-05 | 1999-08-17 | Mitsubishi Electric Corp | 放電灯点灯装置 |
GB2353400B (en) | 1999-08-20 | 2004-01-14 | Cambridge Display Tech Ltd | Mutiple-wavelength light emitting device and electronic apparatus |
JP2002231054A (ja) | 2001-02-01 | 2002-08-16 | Stanley Electric Co Ltd | 透明電極材料およびそれを用いた電子素子 |
JP2003151761A (ja) | 2001-11-14 | 2003-05-23 | Osaka Industrial Promotion Organization | 有機el素子を含む発光素子およびそれを用いた光インターコネクション装置 |
-
2004
- 2004-08-23 US US10/924,750 patent/US7321197B2/en active Active
- 2004-08-26 CN CN2004100644325A patent/CN1592525B/zh active Active
- 2004-08-26 KR KR1020040067570A patent/KR100996077B1/ko active IP Right Grant
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5049780A (en) * | 1988-12-02 | 1991-09-17 | National Research Council Of Canada | Optical interference, electroluminescent device having low reflectance |
Non-Patent Citations (7)
Title |
---|
JP特开2001-244078A 2001.09.07 |
JP特开2003-151761A 2003.05.23 |
JP特开2003-151762A 2003.05.23 |
JP特开2003-167224A 2003.06.13 |
JP特开2003-208988A 2003.07.25 |
JP特开2003-217825A 2003.07.31 |
JP特开平11-224783A 1999.08.17 |
Also Published As
Publication number | Publication date |
---|---|
KR100996077B1 (ko) | 2010-11-22 |
US7321197B2 (en) | 2008-01-22 |
CN1592525A (zh) | 2005-03-09 |
KR20050021327A (ko) | 2005-03-07 |
US20050236982A1 (en) | 2005-10-27 |
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C10 | Entry into substantive examination | ||
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C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: IPS ALPHA SUPPORT CO., LTD. Effective date: 20111124 Owner name: PANASONIC LCD CO., LTD. Free format text: FORMER OWNER: IPS ALPHA SUPPORT CO., LTD. Effective date: 20111124 |
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C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20111124 Address after: Chiba County, Japan Co-patentee after: Panasonic Liquid Crystal Display Co.,Ltd. Patentee after: Hitachi Displays, Ltd. Address before: Chiba County, Japan Co-patentee before: IPS pioneer support society Patentee before: Hitachi Displays, Ltd. Effective date of registration: 20111124 Address after: Chiba County, Japan Co-patentee after: IPS Pioneer Support Society Patentee after: Hitachi Displays, Ltd. Address before: Chiba County, Japan Patentee before: Hitachi Displays, Ltd. |
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CP01 | Change in the name or title of a patent holder | ||
CP01 | Change in the name or title of a patent holder |
Address after: Chiba County, Japan Co-patentee after: Panasonic Liquid Crystal Display Co.,Ltd. Patentee after: JAPAN DISPLAY Inc. Address before: Chiba County, Japan Co-patentee before: Panasonic Liquid Crystal Display Co.,Ltd. Patentee before: Hitachi Displays, Ltd. |
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TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20180917 Address after: Gyeonggi Do, South Korea Patentee after: SAMSUNG DISPLAY Co.,Ltd. Address before: Chiba County, Japan Co-patentee before: Panasonic Liquid Crystal Display Co.,Ltd. Patentee before: JAPAN DISPLAY Inc. |
|
CP01 | Change in the name or title of a patent holder | ||
CP01 | Change in the name or title of a patent holder |
Address after: Chiba County, Japan Co-patentee after: Panasonic Liquid Crystal Display Co.,Ltd. Patentee after: JAPAN DISPLAY Inc. Address before: Chiba County, Japan Co-patentee before: Panasonic Liquid Crystal Display Co.,Ltd. Patentee before: Hitachi Displays, Ltd. |
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TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20180921 Address after: Gyeonggi Do, South Korea Patentee after: SAMSUNG DISPLAY Co.,Ltd. Address before: Chiba County, Japan Co-patentee before: Panasonic Liquid Crystal Display Co.,Ltd. Patentee before: JAPAN DISPLAY Inc. |