CN1591147A - 薄膜晶体管阵列面板 - Google Patents
薄膜晶体管阵列面板 Download PDFInfo
- Publication number
- CN1591147A CN1591147A CNA200410073732XA CN200410073732A CN1591147A CN 1591147 A CN1591147 A CN 1591147A CN A200410073732X A CNA200410073732X A CN A200410073732XA CN 200410073732 A CN200410073732 A CN 200410073732A CN 1591147 A CN1591147 A CN 1591147A
- Authority
- CN
- China
- Prior art keywords
- film transistor
- data line
- electrode
- thin
- display panel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000002161 passivation Methods 0.000 claims abstract description 15
- 239000000758 substrate Substances 0.000 claims abstract description 9
- 239000010409 thin film Substances 0.000 claims description 38
- 239000004065 semiconductor Substances 0.000 claims description 22
- 239000012212 insulator Substances 0.000 claims description 9
- 229910010272 inorganic material Inorganic materials 0.000 claims description 3
- 239000011147 inorganic material Substances 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 41
- 239000004973 liquid crystal related substance Substances 0.000 description 5
- 239000004411 aluminium Substances 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 239000011651 chromium Substances 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000003071 parasitic effect Effects 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 235000008429 bread Nutrition 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 229910000583 Nd alloy Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical class [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- UBSJOWMHLJZVDJ-UHFFFAOYSA-N aluminum neodymium Chemical compound [Al].[Nd] UBSJOWMHLJZVDJ-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000010587 phase diagram Methods 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/13606—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit having means for reducing parasitic capacitance
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136213—Storage capacitors associated with the pixel electrode
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
- G02F2201/12—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode
- G02F2201/123—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode pixel
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Nonlinear Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Thin Film Transistor (AREA)
- Liquid Crystal (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
Description
Claims (7)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020030061743A KR100980021B1 (ko) | 2003-09-04 | 2003-09-04 | 박막 트랜지스터 표시판 |
KR10-2003-0061743 | 2003-09-04 | ||
KR1020030061743 | 2003-09-04 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1591147A true CN1591147A (zh) | 2005-03-09 |
CN100422830C CN100422830C (zh) | 2008-10-01 |
Family
ID=34545526
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB200410073732XA Expired - Fee Related CN100422830C (zh) | 2003-09-04 | 2004-09-02 | 薄膜晶体管阵列面板 |
Country Status (4)
Country | Link |
---|---|
US (1) | US7394099B2 (zh) |
KR (1) | KR100980021B1 (zh) |
CN (1) | CN100422830C (zh) |
TW (1) | TWI361298B (zh) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102044490A (zh) * | 2009-10-14 | 2011-05-04 | 乐金显示有限公司 | 制造薄膜晶体管阵列基板的方法 |
WO2013082774A1 (zh) * | 2011-12-05 | 2013-06-13 | 深圳市华星光电技术有限公司 | 一种阵列基板及液晶显示装置、阵列基板的制造方法 |
CN105938279A (zh) * | 2015-03-02 | 2016-09-14 | 三星显示有限公司 | 显示装置 |
CN107436516A (zh) * | 2016-05-25 | 2017-12-05 | 三星显示有限公司 | 显示装置 |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101061856B1 (ko) * | 2004-11-03 | 2011-09-02 | 삼성전자주식회사 | 박막 트랜지스터 표시판 |
CN101484845B (zh) * | 2006-08-25 | 2011-02-02 | 夏普株式会社 | 有源矩阵型液晶显示装置 |
US9568794B2 (en) | 2010-12-20 | 2017-02-14 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
KR102509111B1 (ko) * | 2018-05-17 | 2023-03-13 | 삼성디스플레이 주식회사 | 표시 장치 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100315924B1 (ko) * | 1997-12-04 | 2002-12-26 | 삼성전자 주식회사 | 액정표시장치용박막트랜지스터기판 |
US6300987B1 (en) * | 1998-12-04 | 2001-10-09 | Samsung Electronics Co., Ltd. | Thin film transistor array panels for liquid crystal displays |
JP4008133B2 (ja) * | 1998-12-25 | 2007-11-14 | 株式会社半導体エネルギー研究所 | 半導体装置 |
US6524876B1 (en) * | 1999-04-08 | 2003-02-25 | Samsung Electronics Co., Ltd. | Thin film transistor array panels for a liquid crystal display and a method for manufacturing the same |
KR100356990B1 (ko) * | 1999-05-28 | 2002-10-18 | 엘지.필립스 엘시디 주식회사 | 고개구율을 갖는 액정표시장치 |
KR100366768B1 (ko) * | 2000-04-19 | 2003-01-09 | 삼성전자 주식회사 | 배선의 접촉부 및 그의 제조 방법과 이를 포함하는 박막 트랜지스터 기판 및 그 제조 방법 |
TW531901B (en) * | 2000-04-27 | 2003-05-11 | Semiconductor Energy Lab | Light emitting device |
KR100646792B1 (ko) * | 2000-07-27 | 2006-11-17 | 삼성전자주식회사 | 박막 트랜지스터 기판 및 그 제조 방법 |
US6559904B1 (en) * | 2000-11-01 | 2003-05-06 | Lg Philips Lcd Co, Ltd. | Liquid crystal display with high aperture ratio |
KR100720098B1 (ko) * | 2001-02-26 | 2007-05-18 | 삼성전자주식회사 | 액정 표시 장치용 박막 트랜지스터 기판 |
US6822264B2 (en) * | 2001-11-16 | 2004-11-23 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
-
2003
- 2003-09-04 KR KR1020030061743A patent/KR100980021B1/ko not_active IP Right Cessation
-
2004
- 2004-08-30 TW TW093126038A patent/TWI361298B/zh not_active IP Right Cessation
- 2004-08-31 US US10/931,338 patent/US7394099B2/en not_active Expired - Fee Related
- 2004-09-02 CN CNB200410073732XA patent/CN100422830C/zh not_active Expired - Fee Related
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102044490A (zh) * | 2009-10-14 | 2011-05-04 | 乐金显示有限公司 | 制造薄膜晶体管阵列基板的方法 |
CN102044490B (zh) * | 2009-10-14 | 2013-09-04 | 乐金显示有限公司 | 制造薄膜晶体管阵列基板的方法 |
WO2013082774A1 (zh) * | 2011-12-05 | 2013-06-13 | 深圳市华星光电技术有限公司 | 一种阵列基板及液晶显示装置、阵列基板的制造方法 |
CN105938279A (zh) * | 2015-03-02 | 2016-09-14 | 三星显示有限公司 | 显示装置 |
CN107436516A (zh) * | 2016-05-25 | 2017-12-05 | 三星显示有限公司 | 显示装置 |
CN107436516B (zh) * | 2016-05-25 | 2022-01-11 | 三星显示有限公司 | 显示装置 |
Also Published As
Publication number | Publication date |
---|---|
US20050098781A1 (en) | 2005-05-12 |
TWI361298B (en) | 2012-04-01 |
US7394099B2 (en) | 2008-07-01 |
TW200513723A (en) | 2005-04-16 |
KR20050023961A (ko) | 2005-03-10 |
KR100980021B1 (ko) | 2010-09-03 |
CN100422830C (zh) | 2008-10-01 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: SAMSUNG DISPLAY CO., LTD. Free format text: FORMER OWNER: SAMSUNG ELECTRONICS CO., LTD. Effective date: 20121219 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20121219 Address after: Gyeonggi Do, South Korea Patentee after: Samsung Display Co., Ltd. Address before: Gyeonggi Do, South Korea Patentee before: Samsung Electronics Co., Ltd. |
|
CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20081001 Termination date: 20160902 |