CN1536438A - Method for eliminating key size deviation of dense pattern and single pattern - Google Patents
Method for eliminating key size deviation of dense pattern and single pattern Download PDFInfo
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- CN1536438A CN1536438A CNA031093795A CN03109379A CN1536438A CN 1536438 A CN1536438 A CN 1536438A CN A031093795 A CNA031093795 A CN A031093795A CN 03109379 A CN03109379 A CN 03109379A CN 1536438 A CN1536438 A CN 1536438A
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Abstract
The invention provides a method to eliminate the deviation between dense pattern and single pattern, firstly providing a shade which is at least separated into a dense pattern region and a single pattern region. Wherein, the two regions are both set with a photo-impermeable film pattern, and the rest of the shade is a photo-permeable region. Then, it forms a virtual pattern around the single region, where the distance between the virtual and single patterns is y and the virtual pattern has a pattern line of x wide. It is because the single pattern is formed with the virtual pattern around that the light-scattering effects of the single and dense patterns are the same, i.e. the key size deviation between the dense and single pattern can be reduced, and that the margin of making course can not be reduced.
Description
Technical field
The invention relates to a kind of little shadow manufacturing process, and particularly relevant for a kind of method of eliminating the key size deviation of intensive pattern and single pattern.
Background technology
Requiring under the more and more higher situation of circuit productive setization, the design of entire circuit component size also is forced to advance toward the direction that size does not stop to dwindle.And the most very important little shadow (Photolithography) manufacturing process of saying so in the whole semiconductor fabrication process, every and metal-oxide semiconductor (MOS) (Metal-Oxide-Semiconductor; MOS) modular construction is relevant, for instance, and the pattern of each layer film (Pattern), and be mixed with the zone of impurity (Dopants), all decide by this step of little shadow.And the assembly of whole semi-conductor industry is comprehensively spent (Integration), and whether that can continue carries out toward littler live width below the μ m O.18, also depends on the development of little shadow manufacturing process technology.
Generally speaking, on same light shield, can have single (Isolation) pattern area and intensive (Dense) pattern area usually.For instance, for ROM (read-only memory), static random access memory, flash memory or DRAM (Dynamic Random Access Memory) and logical circuit etc. being produced on same system on a chip chip (System On a Chip, SOC), usually being intensive pattern in memory cell region, then is single pattern in the logic circuit area.Yet, when carrying out that intensive pattern and single pattern be transferred to the step of exposure of photoresist layer, make the critical size of the exposing patterns in intensive pattern area and the single pattern district produce deviation owing to producing so-called astigmatic effect (Flare Effect), badly influence the usefulness of assembly.
The well-known method that solves the astigmatic effect of this kind is optical proximity effect revised law (Optical Proximity Correction, OPC), just on the master pattern that desire shifts, the live width that reduces or increase master pattern is done correction, so that intensive pattern area keeps identical with the live width of isolating the pattern that pattern area exposes out.Yet, because therefore the astigmatic effect that different exposure bench caused and inequality just must add different modified values for master pattern.And, can make that through revised master pattern the manufacturing process nargin (Process Window) of single pattern district and intensive pattern area is inconsistent, and cause the difficulty of little shadow manufacturing process.In addition, because astigmatic effect is also relevant with pattern density, so even utilize the optical near-correction method also can't obtain good key size evenness.
Summary of the invention
In view of this, purpose of the present invention is exactly that a kind of method of eliminating the key size deviation of intensive pattern and single pattern is being provided, and can reduce the intensive pattern that causes because of astigmatic effect and the key size deviation of single pattern.
The invention provides a kind of method of eliminating the key size deviation of intensive pattern and single pattern, the method is that a light shield is provided earlier, this light shield is divided into intensive pattern area and single pattern district at least, this intensive pattern area and single pattern district are provided with a light tight film figure separately, and the other parts of this light shield are photic zone.Then, around the single pattern district, form dummy pattern, distance y apart between this dummy pattern and the single pattern district, and dummy pattern has a pattern line-width x.
It is 0.5 micron≤x≤10 centimeter that above-mentioned distance y is at least 0.1 micron, pattern line-width x, and the transmittance of dummy pattern is less than 100%.
The present invention is because the single pattern district forms dummy pattern on every side, and makes the suffered astigmatic effect of single pattern district and intensive pattern area identical, can dwindle the key size deviation of intensive pattern and single pattern, nor can dwindle manufacturing process nargin.
The present invention provides a kind of method of eliminating the key size deviation of intensive pattern and single pattern in addition, and the method is that a light shield is provided earlier, and this light shield is divided into intensive pattern area and single pattern district at least.Intensive pattern area and single pattern district are provided with light tight film figure separately, and the other parts of light shield are light tight district.Then, around the single pattern district, form the open zone, this open zone makes light shield light tight distinguish between the single pattern district at a distance of a distance z.
Above-mentioned distance z is 0.5 micron≤y≤10 centimeter, and the transmittance in open zone is greater than 3%.
The present invention is because the single pattern district forms the open zone on every side, and makes the suffered astigmatic effect of single pattern district and intensive pattern area identical, can dwindle the key size deviation of intensive pattern and single pattern, nor can dwindle manufacturing process nargin.
For above and other objects of the present invention, feature and advantage can be become apparent, a preferred embodiment cited below particularly, and cooperate appended graphicly, be described in detail below.
Description of drawings
Figure 1A is for showing well-known a kind of light shield synoptic diagram.
Figure 1B is for showing the light shield synoptic diagram of first embodiment of the invention.
Fig. 2 A is for showing well-known another kind of light shield synoptic diagram.
Fig. 2 B is for showing the light shield synoptic diagram of second embodiment of the invention.
Symbol description
100: light shield
102,202: intensive pattern area
104,204: the single pattern district
106: dummy pattern
206: the open zone
X: pattern line-width
Y, z: distance
Embodiment
First embodiment:
Figure 1A to Figure 1B is for being shown as the light shield synoptic diagram of well-known a kind of light shield and first embodiment of the invention respectively.
At first, please refer to Figure 1A, a light shield 100 is provided.The material of this light shield 100 mainly can be a quartz glass.This light shield 100 is divided into intensive pattern area 102 and single pattern district 104 at least.Be formed with light tight film figure in the intensive pattern area 102 with in the single pattern district 104.Wherein, intensive pattern area 102 is meant zone with tens of light tight films (among the figure be example with 19), and 104 in single pattern district is meant the zone that only is coated with several light tight films (among the figure be example with 3).And the other parts of this light shield 100 are all photic zone.
When the light shield 100 with Figure 1A exposes manufacturing process, if the exposing patterns critical size of intensive pattern area 102 for example is live width=0.38/ spacing=0.2, the exposure energy of this kind live width/spacing of then exposing to for example has 90% from main light source, and 10% from astigmatic effect.When single pattern district 104 being exposed with this same light source, then owing to be spacious photic zone around the single pattern district 104, the exposure energy that the astigmatism effect is compensated can then may make the exposing patterns critical size in single pattern district 104 become live width=0.35/ spacing=0.23 greater than 10%.So the critical size of the exposing patterns in intensive pattern area 102 and the single pattern district 104 will produce deviation.
Then, please refer to Figure 1B, in order to address the above problem, the method for the key size deviation of intensive pattern of elimination of the present invention and single pattern is to form a dummy pattern 106 around single pattern district 104.At a distance of a distance y, and dummy pattern 106 has a pattern line-width x between dummy pattern 106 and the single pattern district 104.Wherein, distance y for example is at least 0.1 micron, and pattern line-width x for example is about 0.5 micron≤x≤10 centimeter.And the transmittance of dummy pattern 106 for example is less than 100%.
When the light shield 100 with Figure 1B exposes manufacturing process, if the exposing patterns critical size of same intensive pattern area 102 for example is live width=0.38/ spacing=0.2, the exposure energy of this kind live width/spacing of then exposing to for example is to have 90% from main light source, and 10% from astigmatic effect.When single pattern district 104 being exposed with this same light source, then owing to be formed with dummy pattern 106 around the single pattern district 104, the exposure energy that this dummy pattern 106 can make astigmatic effect compensate keeps 10%, so just can make the critical size of the exposing patterns in dense graph case district 102 and the single pattern district 104 identical.And, by the transmittance of adjusting dummy pattern, also can adjust the exposure energy that astigmatic effect compensates.
The present invention is owing to form dummy pattern around the single pattern district 104, and make the suffered astigmatic effect of single pattern district 104 and intensive pattern area 102 identical, the key size deviation of intensive pattern and single pattern can be dwindled, nor manufacturing process nargin can be dwindled.
Second embodiment:
Fig. 2 A to Fig. 2 B is for being shown as the light shield synoptic diagram of well-known a kind of light shield and second embodiment of the invention respectively.
At first, please refer to Fig. 2 A, a light shield 200 is provided.The material of this light shield 200 mainly is a quartz glass.This light shield 200 is divided into intensive pattern area 202 and single pattern district 204 at least.In intensive pattern area 202, be formed with the bigger light tight pattern of density.In single pattern district 204, be formed with the less light tight film figure of density.Just, intensive pattern area 202 is meant zone with tens of light tight films (among the figure be example with 19), and 204 in single pattern district is meant the zone that only is coated with several light tight films (among the figure be example with 3).And the other parts of this light shield 200 except intensive pattern area 202 and single pattern district 204 are all light tight district.
When the light shield 200 with Fig. 2 A exposes manufacturing process, if the exposing patterns critical size of intensive pattern area 202 for example is live width=0.38/ spacing=0.2, the exposure energy of this kind live width/spacing of then exposing to for example is to have 90% from main light source, and 10% from astigmatic effect.When single pattern district 204 being exposed with this same light source, then owing to be light tight district around the single pattern district 204, the exposure energy that the astigmatism effect is compensated can then may make the exposing patterns critical size in single pattern district 204 become live width=0.42/ spacing=0.16 less than 10%.So the critical size of the exposing patterns in intensive pattern area 102 and the single pattern district 104 will produce deviation.
Then, please refer to Fig. 2 B, in order to address the above problem, the method for the key size deviation of intensive pattern of elimination of the present invention and single pattern is to form open zone 206 around single pattern district 204.This open zone 206 makes light shield 200 light tight distinguish between the single pattern district 204 at a distance of a distance z.Wherein, distance z for example is about 0.5 micron≤z≤10 centimeter.And the transmittance of dummy pattern 106 for example is greater than 3%.
When the light shield 200 with Fig. 2 B exposes manufacturing process, the exposing patterns critical size of same intensive pattern area 202 for example is live width=0.38/ spacing=0.2, the exposure energy of this kind live width/spacing of then exposing to for example is to have 90% from main light source, and 10% from astigmatic effect.When single pattern district 204 being exposed with this same light source, then owing to be formed with open zone 206 around the single pattern district 104, the exposure energy that this open zone 206 can make astigmatic effect compensate keeps 10%, so it is poor just can to dwindle the critical size of the exposing patterns in intensive pattern area 202 and the single pattern district 204.And, by the transmittance of adjusting dummy pattern, also can adjust the exposure energy that astigmatic effect compensates.
The present invention is owing to form open zone 206 around the single pattern district 204, and make the suffered astigmatic effect of single pattern district 204 and intensive pattern area 202 identical, the key size deviation of intensive pattern and single pattern can be dwindled, nor manufacturing process nargin can be dwindled.
In a word, the present invention forms dummy pattern (or open zone) on every side in the single pattern district to make the suffered astigmatic effect of single pattern district and intensive pattern area consistent, can avoid the intensive pattern that causes because of scattering effect and the key size deviation of single pattern, and help reducing conductor size, reduce the live width gap ratio, and the common manufacturing process space that obtains bigger single pattern district/intensive pattern area.
Though the present invention discloses as above with a preferred embodiment; yet it is not in order to limit the present invention; any skill person who has the knack of this skill; without departing from the spirit and scope of the present invention; when the change that can do a little and retouching, so protection scope of the present invention is when looking above-mentioned being as the criterion of claims defined.
Claims (7)
1. method of eliminating the key size deviation of intensive pattern and single pattern is characterized in that comprising:
A light shield is provided, and this light shield is divided into an intensive pattern area and a single pattern district at least, and this intensive pattern area and this single pattern district are provided with light tight film figure separately, and the other parts of this light shield are photic zone; And
Around this single pattern district, form a dummy pattern, apart distance y between this dummy pattern and this single pattern district, and this dummy pattern has a pattern line-width x.
2. according to the method for the key size deviation of 1 intensive pattern of described elimination of claim the and single pattern, it is characterized in that this distance y is at least 0.1 micron.
3. according to the method for the key size deviation of 1 intensive pattern of described elimination of claim the and single pattern, it is characterized in that this pattern line-width x is 0.5 micron≤x≤10 centimeter.
4. according to the method for the key size deviation of 1 intensive pattern of described elimination of claim the and single pattern, the transmittance that it is characterized in that this dummy pattern is less than 100%.
5. method of eliminating the key size deviation of intensive pattern and single pattern is characterized in that comprising:
A light shield is provided, and this light shield is divided into an intensive pattern area and a single pattern district at least, and this intensive pattern area and this single pattern district are provided with a light tight film figure separately, and the other parts of this light shield are light tight district; And
Form an open zone around this single pattern district, this open zone is distinguished between this single pattern district at a distance of a distance z the light tight of this light shield.
6. according to the method for the key size deviation of 5 intensive patterns of described elimination of claim the and single pattern, it is characterized in that this distance z is 0.1 micron≤z≤10 centimeter.
7. according to the method for the key size deviation of 5 intensive patterns of described elimination of claim the and single pattern, the transmittance that it is characterized in that this open zone is greater than 3%.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB031093795A CN1299164C (en) | 2003-04-08 | 2003-04-08 | Method for eliminating key size deviation of dense pattern and single pattern |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB031093795A CN1299164C (en) | 2003-04-08 | 2003-04-08 | Method for eliminating key size deviation of dense pattern and single pattern |
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| Publication Number | Publication Date |
|---|---|
| CN1536438A true CN1536438A (en) | 2004-10-13 |
| CN1299164C CN1299164C (en) | 2007-02-07 |
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| Application Number | Title | Priority Date | Filing Date |
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| CNB031093795A Expired - Fee Related CN1299164C (en) | 2003-04-08 | 2003-04-08 | Method for eliminating key size deviation of dense pattern and single pattern |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105742298A (en) * | 2016-04-19 | 2016-07-06 | 京东方科技集团股份有限公司 | Display substrate and preparation method therefor, and display apparatus |
| CN110989289A (en) * | 2019-12-25 | 2020-04-10 | 中国科学院微电子研究所 | Method for improving photoetching performance of layout, corrected layout and simulation method |
| CN113759656A (en) * | 2020-06-01 | 2021-12-07 | 中芯国际集成电路制造(上海)有限公司 | Mask manufacturing method, pattern correction method and semiconductor device forming method |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5242770A (en) * | 1992-01-16 | 1993-09-07 | Microunity Systems Engineering, Inc. | Mask for photolithography |
| KR960005756A (en) * | 1994-07-28 | 1996-02-23 | 김주용 | Photomask Manufacturing Method for Semiconductor Device Manufacturing |
| US5821014A (en) * | 1997-02-28 | 1998-10-13 | Microunity Systems Engineering, Inc. | Optical proximity correction method for intermediate-pitch features using sub-resolution scattering bars on a mask |
| JP3085259B2 (en) * | 1997-09-17 | 2000-09-04 | 日本電気株式会社 | Exposure pattern and method for generating the same |
-
2003
- 2003-04-08 CN CNB031093795A patent/CN1299164C/en not_active Expired - Fee Related
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105742298A (en) * | 2016-04-19 | 2016-07-06 | 京东方科技集团股份有限公司 | Display substrate and preparation method therefor, and display apparatus |
| CN105742298B (en) * | 2016-04-19 | 2018-12-11 | 京东方科技集团股份有限公司 | A kind of display base plate and preparation method thereof, display device |
| CN110989289A (en) * | 2019-12-25 | 2020-04-10 | 中国科学院微电子研究所 | Method for improving photoetching performance of layout, corrected layout and simulation method |
| CN110989289B (en) * | 2019-12-25 | 2024-01-23 | 中国科学院微电子研究所 | Method for improving photoetching performance of layout, corrected layout and simulation method |
| CN113759656A (en) * | 2020-06-01 | 2021-12-07 | 中芯国际集成电路制造(上海)有限公司 | Mask manufacturing method, pattern correction method and semiconductor device forming method |
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| Publication number | Publication date |
|---|---|
| CN1299164C (en) | 2007-02-07 |
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