CN1542913A - Crystallite picture making process - Google Patents
Crystallite picture making process Download PDFInfo
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- CN1542913A CN1542913A CNA031224784A CN03122478A CN1542913A CN 1542913 A CN1542913 A CN 1542913A CN A031224784 A CNA031224784 A CN A031224784A CN 03122478 A CN03122478 A CN 03122478A CN 1542913 A CN1542913 A CN 1542913A
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Abstract
The manufacturing process for a micro-crystal pattern is first of all to form a photoresistive layer above the base then to set a first photomask above the phooresistive layer with a high- density pattern. A first exposing step is taken to transfer the high density pattern on the said first photomask to the photoresistive layer among which, the exposing energy of the first step is E1, then to set a second photomask above the photoresistive layer with a low density pattern. After that, a second exposing step is taken to transfer the low- density pattern of the second step to the photoresistive layer and the energy of the second is E2 larger than E1. Finally, a development step is processed to patternize the photoresistive layer.
Description
Technical field
The present invention is about a kind of crystallite figure manufacturing process, and particularly about a kind of design with different densities on different photomasks, produce the crystallite figure manufacturing process of deviation with the critical size of the pattern that prevents different densities.
Background technology
Along with the lifting of integrated circuit integrated level, the design of entire circuit size of components also must be dwindled thereupon.And in whole semiconductor fabrication process the most very important said so crystallite figure manufacturing process, every relevant with metal-oxide semiconductor assembly, for example the pattern of each tunic and be mixed with the zone of impurity (Dopant) all decides by this step of crystallite figure manufacturing process.
In crystallite figure manufacturing process, when carrying out the step of exposure of design transfer, because the exposure luminous intensity in low-density pattern area and high density patterns district inconsistent on the same photomask, thereby can have so-called light leak effect (Flare Effect).In other words, when coming that with identical step of exposure high density patterns and low-density pattern are done exposure and when pattern done to shift, therefore the exposure intensity of the exposure intensity meeting higher density pattern area of low-density pattern will make the critical size of high density patterns and low-density pattern produce deviation a little less than being.Meaning promptly, under the influence of light leak effect, the exposure energy that high density patterns is experienced is always low than the exposure energy that the low-density pattern is experienced, and makes the critical size of pattern of different densities produce deviation.
Therefore, in order to address the above problem, prior art is to utilize extra installing one filter in exposure bench, so that the exposure energy of low-density pattern and high density patterns is different, produces deviation with the critical size that prevents low-density pattern and high density patterns.
Yet existing method must all install filter additional in each exposure bench, and also must use different filters for different design, therefore, will make manufacturing process too loaded down with trivial details.
Summary of the invention
Therefore, purpose of the present invention just provides a kind of crystallite figure manufacturing process, to avoid causing because of the generation of light leak effect in the step of exposure critical size meeting situation devious of the pattern of different densities.
A further object of the present invention provides a kind of crystallite figure manufacturing process, utilizes filter to reduce the method for the exposure energy of low-density pattern area to solve to have now, has the too numerous and diverse shortcoming of manufacturing process.
The present invention proposes a kind of crystallite figure manufacturing process, and it at first forms one deck photoresist layer above a substrate.Afterwards, first photomask is set above photoresist layer, on this first photomask, has a high density patterns.Afterwards, carry out first step of exposure, so that the high density patterns on first photomask is transferred to photoresist layer, wherein the exposure energy of first step of exposure is E1.Then, after first photomask removed, second photomask is set above photoresist layer, on this second photomask, has a low-density pattern.Subsequently, carry out second step of exposure, with the low-density design transfer on second photomask to photoresist layer, wherein the exposure energy of second step of exposure is E2, and E2 is greater than E1.At last, carry out development step, with the patterning photoresist layer, the photoresist layer that wherein is patterned has high density patterns and low-density pattern, and the critical size of the critical size of high density patterns and low-density pattern all meets desired value and zero deflection.
Because the present invention separately designs high density patterns and low-density pattern on two photomasks, and in step of exposure, set its best exposure energy value respectively, so method of the present invention can solve, and crystallite figure manufacturing process can make the critical size of high density patterns and low-density pattern produce the problem of deviation in the prior art for the pattern of different densities.
The present invention with the design of different densities on different photomasks, to avoid the generation of light leak effect, the technology of installing filter in this kind method and the prior art in exposure bench is compared, and is a kind of method unlike the prior art, and is a kind of than the more easy method of prior art.
Description of drawings
For above and other objects of the present invention, feature and advantage can be become apparent, a preferred embodiment cited below particularly, and be elaborated in conjunction with the following drawings.Wherein
Figure 1A to Fig. 1 C is the flow process generalized section according to the crystallite figure manufacturing process of a preferred embodiment of the present invention;
Fig. 2 is the vertical view according to the photomask of a preferred embodiment of the present invention;
The 3rd figure is the vertical view according to another photomask of a preferred embodiment of the present invention; And
The 4th figure is the vertical view according to a patterning photoresist layer of a preferred embodiment of the present invention.
Embodiment
The present invention is that design with different densities is on different photomasks, cause the critical size of pattern to produce deviation to avoid the light leak effect, and in step of exposure, set its best exposure energy value respectively at the pattern of different densities so that at last on photoresist layer the critical size of formed pattern (pattern of different densities) can both meet desired value and zero deflection.Below lift a preferred embodiment it is described in detail, but be not in order to limit the present invention.
Figure 1A to Fig. 1 C is the schematic diagram that illustrates the crystallite figure manufacturing process of a preferred embodiment of the present invention.Please, in a substrate 10, be formed with a material layer 12 earlier with reference to Figure 1A.For patterned material layer 12, can on material layer 12, form one deck photoresist layer usually and be used as its etch mask.Wherein, material layer 12 can be electric conducting material or non-conducting material, is not limited at this.
Then, on material layer 12, form a photoresist layer 14.Wherein, the method that forms photoresist layer 14 for example utilizes method of spin coating photoresist to be coated on the surface of material layer 12 earlier, afterwards, carries out soft roasting step again, forms photoresist layer 14 to drive away the solvent in the photoresist.
Afterwards, a photomask 100 is set above photoresist layer 14, wherein has high density patterns 102 on the photomask 100, as shown in Figure 2, Fig. 2 is the vertical view of photomask 100.In a preferred embodiment, high density patterns 102 for example is the pattern of memory array in the memory subassembly.And the high density patterns 102 on the photomask 100 for example is a transparent area, and other zone then is non-transparent area.
Afterwards, carry out first step of exposure, so that the high density patterns on the photomask 100 102 is transferred on the photoresist layer 14, and in photoresist layer 14, form the image 102a of high density patterns.Wherein, the exposure energy of first step of exposure is E1, and the exposure energy E1 of first step of exposure is according to parameters such as the density of the high density patterns on the photomask 100 102 and sizes and an optimum exposure energy value that calculates.
Please refer to Figure 1B, after photomask 100 is removed, another photomask 200 is arranged on the top of photoresist layer 14, wherein have low-density pattern 202 on the photomask 200, as shown in Figure 3, Fig. 3 is the vertical view of photomask 200.In a preferred embodiment, low-density pattern 202 for example is the pattern of peripheral circuit in the memory subassembly.And the low-density pattern 202 on the photomask 200 for example is a transparent area, and other zone then is non-transparent area.
Afterwards, carry out second step of exposure, so that the high density patterns on the photomask 200 202 is transferred on the photoresist layer 14, and in photoresist layer 14, form the image 202a of low-density pattern.Wherein, the exposure energy of second step of exposure is E2, and the exposure energy E2 of second step of exposure is according to parameters such as the density of the low-density pattern 202 on the photomask 200 and sizes and an optimum exposure energy value that calculates.
What is particularly worth mentioning is that, when coming with step of exposure high density patterns and low-density pattern made pattern and shift, a little less than the exposure intensity that the exposure intensity of low-density pattern can the higher density pattern area is.Therefore, in above-mentioned first step of exposure and second step of exposure, the relation of its exposure energy E1 and E2 normally the exposure energy E2 of second step of exposure (to the step of exposure of low-density pattern) greater than the exposure energy E1 (to the step of exposure of high density patterns) of first step of exposure.
Please refer to Fig. 1 C, after step of exposure is finished, then carry out development step, with patterning photoresist layer 14, and form highdensity photoresistance pattern 14a and low-density photoresistance pattern 14b, as shown in Figure 3, Fig. 3 is the vertical view of the photoresist layer behind the patterning.
Follow-up, can be that etch mask carries out etching manufacturing process just, with patterned material layer 12 with this patterned light blockage layer 14.
Be to utilize patterned light blockage layer to illustrate in the above-described embodiments as the manufacturing process of the etch mask of material layer, but crystallite figure manufacturing process of the present invention is not only can be limited in the above-mentioned manufacturing process application, crystallite figure manufacturing process of the present invention can also be applied in other manufacturing process application, for example is to implant in the manufacturing process of cover curtain as ion with the patterning photoresist layer.
Comprehensive the above, the present invention has following advantage:
1. because the present invention separates design on two photomasks with high density patterns and low-density pattern, and set its best exposure energy value respectively for the pattern of different densities in step of exposure, therefore method of the present invention can solve the problem that prior art crystallite figure manufacturing process can make the critical size generation deviation of high density patterns and low-density pattern.
The present invention with the design of different densities on different photomasks, to avoid the generation of light leak effect, the technology of installing filter in this kind method and the prior art in exposure bench is compared, be a kind of method unlike the prior art, and be a kind of than the more easy method of prior art.
Though with preferred embodiment the present invention has been carried out as above explanation; right its is not in order to limit the present invention; those skilled in the art without departing from the spirit and scope of the present invention; when can doing some changes or improvement, so protection scope of the present invention is with being as the criterion of limiting in the appended claims.
Claims (13)
1. crystallite figure manufacturing process comprises:
One photoresist layer is provided;
First photomask is set above this photoresist layer, on this first photomask, has a high density patterns;
Carry out first step of exposure, so that this high density patterns is transferred to this photoresist layer, wherein the exposure energy of this first step of exposure is E1;
Second photomask is set above this photoresist layer, and has a low-density pattern on this second photomask;
Carry out second step of exposure, with this low-density design transfer to this photoresist layer, wherein the exposure energy of this second step of exposure is E2, and E2 and E1 are inequality; And
Carry out development step, with this photoresist layer of patterning.
2. crystallite figure manufacturing process as claimed in claim 1, wherein this highly dense pattern pattern that is a memory cell arrays.
3. crystallite figure manufacturing process as claimed in claim 1, wherein this low-density pattern pattern that is a peripheral circuit.
4. crystallite figure manufacturing process as claimed in claim 1, wherein the exposure energy E1 of this first step of exposure is an optimum exposure energy of this high density patterns.
5. crystallite figure manufacturing process as claimed in claim 1, wherein the exposure energy E2 of this second step of exposure is an optimum exposure energy of this low-density pattern.
6. crystallite figure manufacturing process as claimed in claim 1, wherein the exposure energy E1 of this first step of exposure is less than the exposure energy E2 of this second step of exposure.
7. crystallite figure manufacturing process as claimed in claim 1, wherein this high density patterns on this first photomask is a transparent area.
8. crystallite figure manufacturing process as claimed in claim 1, wherein this low-density pattern on this second photomask is a transparent area.
9. the method for a photomask design, this method with the design of the high density patterns in the rete on a photomask, with the low-density design in this rete on another photomask.
10. the method for photomask design as claimed in claim 9, wherein this highly dense pattern pattern that is a memory cell arrays.
11. the method for photomask design as claimed in claim 9, wherein this low-density pattern pattern that is a peripheral circuit.
12. the method for photomask design as claimed in claim 9, wherein this high density patterns on this photomask is a transparent area.
13. the method for photomask design as claimed in claim 9, wherein this low-density pattern on this another photomask is a transparent area.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB031224784A CN1324651C (en) | 2003-04-28 | 2003-04-28 | Crystallite picture making process |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB031224784A CN1324651C (en) | 2003-04-28 | 2003-04-28 | Crystallite picture making process |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1542913A true CN1542913A (en) | 2004-11-03 |
| CN1324651C CN1324651C (en) | 2007-07-04 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB031224784A Expired - Fee Related CN1324651C (en) | 2003-04-28 | 2003-04-28 | Crystallite picture making process |
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| Country | Link |
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| CN (1) | CN1324651C (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101452210B (en) * | 2007-11-28 | 2010-09-08 | 上海华虹Nec电子有限公司 | Photolithography method for forming different pattern density |
| CN101271279B (en) * | 2007-03-19 | 2015-07-01 | 群创光电股份有限公司 | Exposure method and photomask for manufacturing plane display device |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR950008384B1 (en) * | 1992-12-10 | 1995-07-28 | 삼성전자주식회사 | Method of forming pattern |
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2003
- 2003-04-28 CN CNB031224784A patent/CN1324651C/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101271279B (en) * | 2007-03-19 | 2015-07-01 | 群创光电股份有限公司 | Exposure method and photomask for manufacturing plane display device |
| CN101452210B (en) * | 2007-11-28 | 2010-09-08 | 上海华虹Nec电子有限公司 | Photolithography method for forming different pattern density |
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| Publication number | Publication date |
|---|---|
| CN1324651C (en) | 2007-07-04 |
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Granted publication date: 20070704 Termination date: 20190428 |