CN1354494A - Photoetching making method capable of reducing kindred effect - Google Patents
Photoetching making method capable of reducing kindred effect Download PDFInfo
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- CN1354494A CN1354494A CN 00130921 CN00130921A CN1354494A CN 1354494 A CN1354494 A CN 1354494A CN 00130921 CN00130921 CN 00130921 CN 00130921 A CN00130921 A CN 00130921A CN 1354494 A CN1354494 A CN 1354494A
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Abstract
The invention relates to a technical method of photo etching fabrication for reducing proximity effect. The method includes following steps. The first photoresist is formed on a wafer. Graphic pattern is made on the first photoresist by photomask and exposing and developing. The first element pattern and the first virtual pattern are formed on the photomask. The virtual pattern is located on periphery of the element pattern. Both of the patterns are transferred to the first photoresist, an dthe second element pattern and the second virtual pattern are formed relatively to the first photoresist. The second photoresist is formed on the first photoresist patterned. Second exposing and developing process to removing part of second photoresist denudates the second element pattern of the first photoresist.
Description
The present invention relates to a kind of photoetching making method, and particularly relate to a kind of a kind of photoetching making technology that can reduce proximity effect.
Requiring under the more and more higher situation of circuit integration, the design of entire circuit element size also is forced to advance toward the direction that size does not stop to dwindle.And the most very important said so photoetching (Photolithography) manufacture craft in the whole semiconductor fabrication process, every and the (Metal-Oxide-Semiconduetor of metal-oxide-semiconductor (MOS); MOS) component structure is correlated with, for example: be equipped with the pattern (Pattern) of layer film, and be mixed with the zone of impurity (Dopants), all decided by this step of photoetching.In addition, the element integrated level of whole semi-conductor industry, the live width toward littler below the 0.18 μ m that whether can continue is carried out, and also is decided by the development of photoetching making technology.In order to satisfy this demand, some methods that improve the photomask resolutions are constantly put forward, as the optical near-correction method (Opcical Proximity Correction, OPC) and the phase-shift type photomask (Phase ShiftMask, PSM) or the like.
Wherein the purpose of OPC is in order to eliminate the key size deviation phenomenon because of proximity effect caused.Proximity effect (Proximity Effect) is to see through graphic pattern projection on the photomask on wafer the time when light beam, makes light beam extended owing to light beam can produce scattering phenomenon on the one hand.On the other hand, the photoresist layer that light beam can see through wafer surface reflected via the semiconductor-based end of wafer again, produced the phenomenon of interfering, therefore can repeated exposure, and change exposure actual on the photoresist layer.
Because edge at exposing patterns, light intensity a little less than, the exposure deficiency, therefore the figure that causes formed pattern edge on the photoresist easily pattern on the actual light mask twist to some extent or shorten (shorting), and influence the accuracy of the critical size at exposing patterns edge, and cause the error on live width or the design transfer.
Therefore, generally speaking,, can form an auxiliary patterns in the exposing patterns edge on photomask usually in order to reduce the influence of proximity effect for the exposing patterns edge.Figure 1A and Figure 1B illustrate are looked sketch for having now on the photomask with auxiliary patterns.Wherein, Figure 1A is for looking sketch on the pattern density upper zone on the photomask 100, and looks sketch on the photomask of Figure 1B for single pattern zone on the photomask 100.
Please refer to Figure 1A because the third edge pattern 102a of pattern density upper zone 102, when carrying out the step of exposure of design transfer, compared to the luminous intensity of the suffered light of the intensive pattern 102b of central authorities a little less than, therefore can by third edge pattern 102a, add auxiliary patterns 106.
Same, please refer to Figure 1B, on same photomask 100, single pattern 104 is compared to intensive pattern area 102, when carrying out the step of exposure of design transfer, owing to need the luminous intensity of exposure stronger compared to the luminous intensity of intensive pattern area 102 needed exposures, suitable in order to make in the required exposure luminous intensity of all patterns of same photomask, therefore add an auxiliary patterns 106 respectively in the both sides of single pattern 104, so that the density of the pattern density of single pattern 104 and intensive pattern area 102 is suitable.
In order to make auxiliary patterns 106 can not be transferred on the photoresist in the lump when the design transfer, therefore the live width b of general auxiliary patterns 106 is than the also little (a＞b) just of the live width a of element pattern (comprising intensive pattern area 102 and single pattern 104), and in order to make the third edge pattern 102a or the profile of single pattern 104 more obvious, so it is identical or less with the wavelength () of exposure that the distance D of auxiliary patterns 106 and third edge pattern 102a and single pattern 104 needs approximately, to reach auxiliaring effect.
But along with the element integrated level is more and more higher, live width is done more and more littler, the also apparent more complexity of element pattern, and the element pattern live width on the photomask is also dwindled thereupon, and the live width of auxiliary patterns is also narrower and small simultaneously, has therefore improved the manufacturing difficulty of photomask.In addition, because it is identical with the wavelength of exposure that the distance of auxiliary patterns 106 third edge pattern 102a and single pattern 104 needs approximately, therefore working as element pattern becomes increasingly complex with intensive, to on photomask, reserve with the exposure optical wavelength with wide space to form auxiliary patterns, improve the difficulty and the manufacturing cost of the manufacturing of photomask more.Have the great difficulty on making photomask, after the photomask manufacturing was finished, the defective improvement (debug) of carrying out auxiliary patterns was also very difficult.
Therefore purpose of the present invention is to provide a kind of photoetching making method capable of reducing kindred effect exactly.
For achieving the above object, the invention provides a kind of photoetching making method, comprise: a wafer is provided, its top is formed with one first photoresist, afterwards with a photomask, carry out the first exposure imaging manufacture craft, patterning first photoresist, wherein be formed with first element pattern and first dummy pattern on this photomask, and first dummy pattern is positioned at the periphery of first element pattern, and first element pattern on the photomask and first dummy pattern are transferred to first photoresist, and correspond to formation second element pattern and second dummy pattern on first photoresist.Then, on first photoresist of patterning, form second photoresist.At last, carry out the second exposure imaging manufacture craft, remove part second photoresist, and only expose this second element pattern of this first photoresist.
According to a preferred embodiment of the present invention, wherein the live width of first element pattern is identical with the live width of first dummy pattern, and a density of first element pattern is identical with a density between first dummy pattern and first element pattern.
Because the live width of first element pattern on photomask is identical with the live width of first dummy pattern, therefore can reduce along with the element live width is more and more littler, the degree of difficulty that photomask is made, and photomask after forming check and to repair also more existing fill-in light mask easy, more can improve the manufacture craft nargin of photoetching making technology in addition.
For above-mentioned and other purposes of the present invention, feature and advantage can be become apparent, a preferred embodiment cited below particularly, and conjunction with figs. elaborates.In the accompanying drawing:
Figure 1A illustrate is looked sketch for having now on the photomask with auxiliary patterns;
Figure 1B illustrate is looked sketch for having now on the photomask with auxiliary patterns;
Fig. 2 A is depicted as on the photomask of reduced proximity effect photoetching making technology according to one preferred embodiment of the present invention and looks sketch;
Fig. 2 B is the profile of photomask 200 2B-2B ' along the line of Fig. 2 A; And
Fig. 3 A to Fig. 3 C is for according to one preferred embodiment of the present invention with the diagrammatic sectional view of the reduction proximity effect photoetching making technological process that photomask was carried out of Fig. 2 A.
Wherein, the relation of each figure grade and member title is as follows:
100,200: photomask
102,202,302: the pattern compact district
102a: third edge pattern
102b: central intensive pattern
104,204,304: single pattern
106: auxiliary patterns
206a, 206b, 306a, 306b: dummy pattern
300: wafer
308: the patterning photoresist
309: resilient coating
310: photoresist
Embodiment
Shown in Fig. 2 A, look sketch on the photomask for according to one preferred embodiment of the present invention reduced proximity effect photoetching making method.Fig. 2 B is the profile of photomask 200 2B-2B ' along the line of Fig. 2 A.Fig. 3 A to Fig. 3 C is for according to one preferred embodiment of the present invention with the diagrammatic sectional view of the reduction proximity effect photoetching making technological process that photomask was carried out of Fig. 2 A.
Please refer to Fig. 2 A and Fig. 2 B, a photomask 200 at first is provided, this photomask 200 can be a bright field light mask (clear field mask) or a dark field light mask (dark field mask), and is example with the bright field light mask in present embodiment.Be formed with element pattern on the photomask 200, comprise a pattern compact district 202 and a single pattern 204.Respectively in pattern compact district 202 and the periphery of single pattern 204 be formed with dummy pattern (dummy pattem) 206a and 206b.
The live width b ' that is positioned at the dummy pattern 206a of pattern compact district 202 peripheries is not less than the pattern line-width a ' of pattern compact district 202, and preferred dummy pattern 206a live width b ' is equal to the pattern line-width a ' of pattern compact district 202.Same, the live width d ' of the dummy pattern 206b of single pattern 204 peripheries is not less than the live width c ' of single pattern 204, and preferred dummy pattern 206b live width d ' is equal to the pattern line-width c ' of single pattern 204.In addition, the distance D of dummy pattern 206a and pattern compact district 202 ' the be equal to distance D ＂ between the pattern in the pattern compact district 202, wide and the pattern density of the line-spacing of dummy pattern 206a just, respectively with the pattern lines of pattern compact district 202 apart from wide and pattern density is identical.In addition, single pattern 204 is identical with the density of the pattern density formed of dummy pattern 206b around it and pattern compact district 202.
Then, please refer to Fig. 3 A, a wafer 300 is provided, be formed with the photoresist 308 of a patterning on this wafer 300.Wherein patterning photoresist 308 for example is a positive photoresist or a negative photoresist.The bright field light mask that is provided with Fig. 2 A is an example as the photoresist on the patterned wafers 300, then patterning photoresist 308 is a negative photoresist, and the method that forms patterning photoresist 308 on wafer 300 comprises, prior to forming a photoresist layer (not illustrating) on the wafer 300, carry out soft roasting (Soff Bake) manufacture craft afterwards.The effect that technology is made in soft baking is to remove solvent in the photoresist, increase the adhesive force of photoresist and increase employed developer in the subsequent step to selectivity of exposure and unexposed photoresist or the like.
Then, the bright field light mask that is provided with Fig. 2 A carries out an exposure manufacture craft, the intensive pattern area 202 on the photomask 200, dummy pattern 206a and 206b and single pattern 204 are transferred in the photoresist (not illustrating) on the wafer 300.Continue it, carry out a postexposure bake manufacture craft (Post ExposureBake), that continues carries out a development manufacture craft, has the patterning photoresist 308 of intensive pattern area 302, dummy pattern 306a and 306b and single pattern 304 with formation.Wherein intensive pattern area 302, dummy pattern 306a and 306b and single pattern 304 correspond to intensive pattern area 202, dummy pattern 206a and 206b and the single pattern 204 on the photomask 200.
Present embodiment is with a bright field light mask 200 and be patterned into example on a negative photoresist, yet it carries out the photoetching making technology that provides of the present invention in can a dark field light mask in the practical application arranging in pairs or groups on positive photoresist.In addition, identical with photomask 200 is, in the patterning photoresist 308, the live width f that is positioned at the dummy pattern 306a of pattern compact district 302 peripheries is not less than the pattern line-width e of pattern compact district 302, and preferred dummy pattern 306a live width f is equal to the pattern line-width e of pattern compact district 302.Same, the live width h of the dummy pattern 306b of single pattern 304 peripheries in the patterning photoresist 308 is not less than the live width g of single pattern 304, and preferred dummy pattern 306b live width h is equal to the pattern line-width g of single pattern 304.In addition, dummy pattern 306a and pattern compact district 302 apart from E be equal in the pattern compact district 302 between the pattern apart from E ', wide and the pattern density of the line-spacing of dummy pattern 306a just, respectively with the pattern lines of pattern compact district 302 apart from wide and pattern density is identical.
Because the pattern density of the dummy pattern 206a on the photomask is identical with the pattern density of pattern compact district 202, and, the live width b ' of dummy pattern 206a and 206b and d ' the live width c ' with the pattern line-width a ' of pattern compact district 202 and single pattern 204 respectively are identical, therefore during the patterning photoresist 308 on forming wafer 300, the edge of the third edge pattern of pattern compact district 202 and single pattern 204, then because assisting of dummy pattern 206a and 206b arranged, and improve the luminous intensity and the exposure at the edge of the third edge pattern of pattern compact district 202 and single pattern 204 relatively, therefore can distortion not too many at the element pattern of the pattern that forms on the photoresist (patterning photoresist 308) on the photomask 200, so can be as existing because a little less than the exposure luminous intensity, the exposure deficiency, and the generation proximity effect causes figure deformation.
Moreover, because the pattern of the dummy pattern 206a on the photomask 200 and the live width of 206b and pattern compact district 202 and the live width of single pattern 204 are identical, and the distance of dummy pattern 206a to the distance at the edge of pattern compact district 202 and dummy pattern 206b to single pattern 204, and be subject to the restriction of the length of exposure wavelength unlike the distance of existing auxiliary patterns and element pattern, therefore, making on the photomask, greatly reducing photomask and make degree of difficulty.
In addition, existing auxiliary patterns must be very little, and the difficulty that causes auxiliary patterns on photomask, to form, and the live width sizableness of the live width of dummy pattern of the present invention size and element pattern, therefore the difficulty that forms dummy pattern on the photomask be can be reduced in, and the test after photomask is made and the degree of difficulty of correction reduced simultaneously.Same, dummy pattern of the present invention also can add among the designed original layout figure of client more easily.In addition, therefore the pattern density difference of pattern compact district 202 and single pattern 204 can significantly improve manufacture craft nargin because dummy pattern 206a and 206b can further.
Continue it, please refer to Fig. 3 B, on patterning photoresist 308, form one deck photoresist 310, and fill up pattern compact district 302, dummy pattern 306a and 306b and single pattern 304.Wherein, this photoresist 310 can be a positive photoresist or a negative photoresist.
Continue it, please refer to Fig. 3 C, carry out the soft baking of photoresist 310 and make technology.Then, carry out an exposure manufacture craft and a postexposure bake manufacture craft in regular turn, that continues carries out a development manufacture craft, to remove part photoresist 310, forms and only exposes the pattern compact district 302 of patterning photoresist 308 and the photoresist 310a of single pattern 304.
Wherein, before forming photoresist 310, can form one deck resilient coating 309 in wafer 300 tops.Antireflection coating (Hydrophilic anti-reflectioncoating) or the material of possess hydrophilic property chemical constitution that this resilient coating 309 for example is a possess hydrophilic property.Because resilient coating 309 is formed by the material of possess hydrophilic property, therefore when carrying out the development step of second photoresist 310, the partial buffer layer 309 that is covered by photoresist 310a can together not remove along with the cleaning that development continues.Because between patterning photoresist 308 and photoresist layer 310, be formed with a resilient coating 309, therefore can avoid in the process that forms photoresist 310, patterning photoresist 308 produces immixture (intermixing process) with photoresist 310.
Because on patterning photoresist 308, directly form another layer photoresist 310, and patterning photoresist 310 is to form dummy pattern 306a and the 306b in the overlay pattern photoresist 308, only make needed element pattern (just pattern compact district 302 and single pattern 304) expose, therefore follow-up when being transferred on the wafer 300 by photoresist element pattern, can simultaneously dummy pattern 306a and 306b not shifted in the lump.And the element pattern of the patterning photoresist 308 that photoresist 310a is exposed also forms owing to shifting via above-mentioned photomask 200 with dummy pattern 206a and 206b, so the edge of the edge of pattern compact district 302 and single pattern 304 can not produce proximity effect.
In sum, the present invention has following advantage:
1. the pattern density owing to the dummy pattern on the photomask is identical with element pattern density among the present invention, and, the live width of the dummy pattern live width with element pattern respectively is identical, therefore during the patterning photoresist on forming wafer, the edge of part drawing, then because the auxiliary of dummy pattern arranged, and improve the luminous intensity and the exposure at element pattern edge relatively, therefore can distortion at the element pattern of the pattern that forms on the photoresist on the photomask 200, and can reduce proximity effect.
2. among the present invention, because the dummy pattern live width on the photomask is identical with the live width of element pattern, and dummy pattern is to the distance at element pattern edge, and be subject to the restriction of the length of exposure wavelength unlike the distance of existing auxiliary patterns and element pattern, therefore, greatly reduce photomask and make degree of difficulty.
3. existing auxiliary patterns must be very little, to prevent that auxiliary patterns is in the exposure imaging process, be transferred on the photoresist, but the difficulty that causes auxiliary patterns on photomask, to form, yet dummy pattern live width size of the present invention is identical with element pattern live width size, therefore the difficulty that forms dummy pattern on the photomask be can be reduced in, and the test after photomask is made and the degree of difficulty of correction reduced simultaneously.
4. dummy pattern of the present invention also can add among the designed complicated original layout figure of client more easily.In addition, in the part pattern, therefore the pattern density difference of pattern compact district and single pattern can significantly improve manufacture craft nargin because dummy pattern can further.
5. among the present invention, utilize to form two-layer patterning photoresist in regular turn, cover the dummy pattern of ground floor patterning photoresist with second layer patterning photoresist, so dummy pattern can be transferred to lower chip by photoresist.
Though the present invention discloses as above in conjunction with a preferred embodiment; yet it is not in order to limit the present invention; those skilled in the art can make various changes and retouching without departing from the spirit and scope of the present invention, so protection scope of the present invention should be defined by accompanying Claim.
Claims (23)
1. photoetching making method capable of reducing kindred effect, it comprises:
One wafer is provided, and this wafer top is formed with one first photoresist;
With a photomask, carry out one first exposure imaging manufacture craft, this first photoresist of patterning, wherein be formed with one first element pattern and one first dummy pattern on this photomask, it is wide that this first element pattern has one first line-spacing, it is wide that this first dummy pattern and this first element pattern have one second line-spacing, and this first dummy pattern is positioned at the periphery of this first element pattern, and this first element pattern on this photomask and this first dummy pattern are transferred to this first photoresist, and correspond to formation one second element pattern and one second dummy pattern on this first photoresist;
On this first photoresist of patterning, form one second photoresist; And,
Carry out one second exposure imaging manufacture craft, remove this second photoresist of part, and only expose this second element pattern of this first photoresist.
2. photoetching making method capable of reducing kindred effect as claimed in claim 1, wherein when this first photoresist was a negative photoresist, this photomask was a bright field light mask.
3. photoetching making method capable of reducing kindred effect as claimed in claim 1, wherein when this first photoresist was a positive photoresist, this photomask was a dark field light mask.
4. photoetching making method capable of reducing kindred effect as claimed in claim 1, wherein this second photoresist is a negative photoresist.
5. photoetching making method capable of reducing kindred effect as claimed in claim 1, wherein this second photoresist is a positive photoresist.
6. photoetching making method capable of reducing kindred effect as claimed in claim 1, wherein carry out this first exposure imaging manufacture craft and also comprise:
Carry out a soft baking and make technology;
Carry out an exposure manufacture craft;
Carry out a postexposure bake manufacture craft; And
Carry out a development manufacture craft.
7. photoetching making method capable of reducing kindred effect as claimed in claim 1, wherein this first line-spacing is wide wide identical with this second line-spacing.
8. photoetching making method capable of reducing kindred effect as claimed in claim 1, wherein a density of this first element pattern is identical with a density between this first dummy pattern and this first element pattern.
9. photoetching making method capable of reducing kindred effect as claimed in claim 1, wherein a live width of this first element pattern is identical with the live width of this first dummy pattern.
10. photoetching making method capable of reducing kindred effect as claimed in claim 1 wherein forms before this second photoresist, also is included in this wafer top and forms a resilient coating.
11. a photoetching making method capable of reducing kindred effect, it comprises:
One wafer is provided, this wafer top is formed with a patterning photoresist, wherein this patterning photoresist has one first element pattern and one first dummy pattern, it is wide that this first element pattern has one first line-spacing, it is wide that this first dummy pattern and this element pattern have one second line-spacing, and this first dummy pattern is positioned at the periphery of this first element pattern;
On this patterning photoresist, form one first photoresist; And
Carry out one first exposure imaging manufacture craft, remove this first photoresist of part, wherein remaining this first photoresist covers this first dummy pattern.
12. photoetching making method capable of reducing kindred effect as claimed in claim 11, the method that wherein forms this patterning photoresist comprises:
Form one second photoresist in this wafer top;
Carry out a soft baking and make technology;
With a photomask, carry out an exposure manufacture craft, wherein be formed with one second element pattern and one second dummy pattern on this photomask, it is wide that this second element pattern has one the 3rd line-spacing, it is wide that this second dummy pattern and this second element pattern have one the 4th line-spacing, and this second dummy pattern is positioned at the periphery of this second element pattern;
Carry out a postexposure bake manufacture craft; And
Carry out a development manufacture craft, then this second element pattern and this second dummy pattern are transferred on this second photoresist forming this patterning photoresist, and form corresponding this first element pattern and this first dummy pattern in this patterning photoresist.
13. photoetching making method capable of reducing kindred effect as claimed in claim 12, wherein when this second photoresist was a negative photoresist, this photomask was a bright field light mask.
14. photoetching making method capable of reducing kindred effect as claimed in claim 12, wherein when this second photoresist was a positive photoresist, this photomask was a dark field light mask.
15. photoetching making method capable of reducing kindred effect as claimed in claim 12, wherein the 3rd line-spacing is wide wide identical with the 4th line-spacing.
L6. photoetching making method capable of reducing kindred effect as claimed in claim 12, wherein a density of this second element pattern is identical with a density between this second dummy pattern and this second element pattern.
17. photoetching making method capable of reducing kindred effect as claimed in claim 12, wherein a live width of this second element pattern is identical with the live width of this second dummy pattern.
18. photoetching making method capable of reducing kindred effect as claimed in claim 11, wherein this first photoresist can be a negative photoresist.
19. photoetching making method capable of reducing kindred effect as claimed in claim 11, wherein this first photoresist can be a positive photoresist.
20. photoetching making method capable of reducing kindred effect as claimed in claim 11, wherein this first line-spacing is wide wide identical with this second line-spacing.
21. photoetching making method capable of reducing kindred effect as claimed in claim 11, wherein a density of this first element pattern is identical with a density between this first dummy pattern and this first element pattern.
22. photoetching making method capable of reducing kindred effect as claimed in claim 11, wherein a live width of this first element pattern is identical with the live width of this first dummy pattern.
23. photoetching making method capable of reducing kindred effect as claimed in claim 11 wherein forms before this second photoresist, also is included in this wafer top and forms a resilient coating.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB001309218A CN1174468C (en) | 2000-11-21 | 2000-11-21 | Photoetching making method capable of reducing kindred effect |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB001309218A CN1174468C (en) | 2000-11-21 | 2000-11-21 | Photoetching making method capable of reducing kindred effect |
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| Publication Number | Publication Date |
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| CN1354494A true CN1354494A (en) | 2002-06-19 |
| CN1174468C CN1174468C (en) | 2004-11-03 |
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| Application Number | Title | Priority Date | Filing Date |
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| CNB001309218A Expired - Lifetime CN1174468C (en) | 2000-11-21 | 2000-11-21 | Photoetching making method capable of reducing kindred effect |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1326203C (en) * | 2004-01-05 | 2007-07-11 | 旺宏电子股份有限公司 | Method and device for improving key size consistency between different patterns for semiconductor assembly |
| CN100403166C (en) * | 2003-10-06 | 2008-07-16 | 松下电器产业株式会社 | Photomask and method for forming pattern |
| CN101241302B (en) * | 2007-02-06 | 2011-03-23 | 中芯国际集成电路制造(上海)有限公司 | Preparation method for improving mask critical size trend |
| CN104808435A (en) * | 2014-01-24 | 2015-07-29 | 中芯国际集成电路制造(上海)有限公司 | Detection method for double masks in OPC |
| CN107664916A (en) * | 2017-09-30 | 2018-02-06 | 德淮半导体有限公司 | Semiconductor device and its manufacture method |
| CN111638624A (en) * | 2020-06-04 | 2020-09-08 | 厦门通富微电子有限公司 | Mask, method for preparing semiconductor device and semiconductor device |
| CN111638625A (en) * | 2020-06-04 | 2020-09-08 | 厦门通富微电子有限公司 | Mask, method for preparing semiconductor device and semiconductor device |
-
2000
- 2000-11-21 CN CNB001309218A patent/CN1174468C/en not_active Expired - Lifetime
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100403166C (en) * | 2003-10-06 | 2008-07-16 | 松下电器产业株式会社 | Photomask and method for forming pattern |
| CN1326203C (en) * | 2004-01-05 | 2007-07-11 | 旺宏电子股份有限公司 | Method and device for improving key size consistency between different patterns for semiconductor assembly |
| CN101241302B (en) * | 2007-02-06 | 2011-03-23 | 中芯国际集成电路制造(上海)有限公司 | Preparation method for improving mask critical size trend |
| CN104808435A (en) * | 2014-01-24 | 2015-07-29 | 中芯国际集成电路制造(上海)有限公司 | Detection method for double masks in OPC |
| CN104808435B (en) * | 2014-01-24 | 2019-05-17 | 中芯国际集成电路制造(上海)有限公司 | The detection method of double mask plates in a kind of OPC |
| CN107664916A (en) * | 2017-09-30 | 2018-02-06 | 德淮半导体有限公司 | Semiconductor device and its manufacture method |
| CN111638624A (en) * | 2020-06-04 | 2020-09-08 | 厦门通富微电子有限公司 | Mask, method for preparing semiconductor device and semiconductor device |
| CN111638625A (en) * | 2020-06-04 | 2020-09-08 | 厦门通富微电子有限公司 | Mask, method for preparing semiconductor device and semiconductor device |
| CN111638625B (en) * | 2020-06-04 | 2023-03-14 | 厦门通富微电子有限公司 | Mask, method for preparing semiconductor device and semiconductor device |
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|---|---|
| CN1174468C (en) | 2004-11-03 |
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