CN1673867A - Method for raising standard image logarithmic slope of exposure straight line - Google Patents
Method for raising standard image logarithmic slope of exposure straight line Download PDFInfo
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- CN1673867A CN1673867A CN 200410031219 CN200410031219A CN1673867A CN 1673867 A CN1673867 A CN 1673867A CN 200410031219 CN200410031219 CN 200410031219 CN 200410031219 A CN200410031219 A CN 200410031219A CN 1673867 A CN1673867 A CN 1673867A
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Abstract
The method of raising the logarithmic slope of standard image of exposure straight line includes providing one mask layout for Quasar 90 lighting. The mask layout includes at least one first straight line pattern, one second straight line pattern parallel to the first straight line pattern, and the first auxiliary pattern between the first straight line pattern and the second straight line pattern. The first auxiliary pattern includes several geometric patterns in the same size arranged along the first straight line direction parallel to the first straight line pattern.
Description
Technical field
The invention provides a kind of standard video log slope that improves the exposure straight line (normalized imagelog slop, method NILS), particularly a kind of by in light shield layout figure, adding the method for auxiliary patterns with the NILS that improves the exposure straight line.
Background technology
In semiconductor technology, photoetching process is that integrated circuit layout is transferred to important step on the semi-conductor chip.Generally speaking, wafer factory can design several light shield layouts figure according to integrated circuit layout, on each light shield, make the light shield layout figure that designs again, the pattern on the light shield is shifted (transfer) in certain proportion to the photoresist layer of semiconductor chip surface by photoetching process.
Along with the continuous lifting of the complexity and the integrated level (integration) of integrated circuit, it is more and more littler that the pattern on the light shield also is designed to be.Yet when carrying out design transfer, because critical dimension (the critical dimension of the pattern that exposure (exposure) can be produced, CD) can be subject to the resolution limit (resolution limit) of exposure bench (opticalexposure tool), therefore when the mask pattern of arranging for these high density is exposed with formation photoresistance pattern, be very easy to produce optics closing effect (optical proximity effect), make and to be formed at pattern on the photoresist layer because overexposure (overexpose) or under-exposed (underexpose), resolution impairment (resolution loss) takes place, cause pattern and the pattern on the photoresist layer on the light shield inconsistent, cause the pattern on the photoresist layer can be very far away at last with original design size difference.
Please refer to Fig. 1, Fig. 1 is the synoptic diagram of conventional lithography system 10.Etching system 10 comprises an exposure bench, which is provided with a scanner (scanner system) 12 and semiconductor wafer 24.Scanner 12 includes light source 14, one first lens 16, an aperture that is arranged at scanner 12 tops and coils (aperture plate) 18,1 second lens 20 and a light shield (photomask) 22.The light that penetrates from light source 14 can be incident to the aperture dish 18 via first lens 16, more in regular turn via second lens 20 and light shield 22, arrives the exposure area 26 on the wafer 24, to define the pattern on the light shield 22 at the photoresist layer on the wafer 24.Aperture dish 18 is the application of off-axis irradiation (off-axis illumination), and it includes one to several apertures (aperture), can adjust the incident angle of the light that passes through, to improve the resolution of photoetching process.In order to reduce cost and to improve integrated level, the R﹠D direction of industry has comprised by the aperture pattern of improveing on the aperture dish 18, to improve the design transfer effect of utilizing existing light source (for example light source of wavelength 248nm) and board.And in several aperture patterns, Quasar 90 is four spoke patterns of 90 degree angles for a kind of and transverse axis, and as circular (annular) equal aperture pattern, Quasar 90 can improve the array critical dimension of photoetching process compared to other.
Please refer to Fig. 2, Fig. 2 is the curve map of the NILS of live width 90 nanometers (nm) to light shield layout figure line distance (space), the NILS value of various as shown in Figure 2 apertures pattern when different line-spacing, wherein NILS represents the quality of imaging, and the high more expression technology allowance scope of its value is good more.Generally speaking, when the optical source wavelength of photoetching process was 248nm, NILS must be greater than 1.3-1.5, and the pattern that then is exposed on the photoresist layer just is effective pattern.As shown in Figure 2, though Quasar 90 can improve the array critical dimension of photoetching process, but it is 90nm in live width, NILS value when line-spacing is the 180nm-250nm scope is lower than 1.5 (as arrow indication places), NILS than other aperture pattern is lower, minimum NILS requirement in the time of can't reaching optical source wavelength and be 248nm produces forbidden distance (forbidden pitch), makes design transfer produce major defect.
From the above, how to utilize Quasar 90 irradiations with raising array critical dimension simultaneously, and avoid the situation of forbidden distance, improving line-spacing is the NILS value of 180nm-250nm, still is industry utmost point problem to be studied.
Summary of the invention
Therefore fundamental purpose of the present invention is to provide a kind of method that adds auxiliary patterns in light shield layout figure, to improve the NILS value of exposure straight line, solves the forbidden distance problem of above-mentioned conventional lithography process.
According to the present invention, a kind of method that improves the NILS of exposure straight line is disclosed, described method includes provides a light shield layout figure who is applied to Quasar 90 irradiations, and described light shield layout figure includes at least one first straight-line pattern and is parallel to one second straight-line pattern of described first straight-line pattern, and between described first and second straight-line pattern, add one first auxiliary patterns, wherein said first auxiliary patterns includes a plurality of geometric schemes (geometric pattern) with identical size, arrange along one first rectilinear direction, described first rectilinear direction is parallel to described first straight-line pattern.
According to the present invention, a kind of method that improves the NILS of exposure straight line is disclosed in addition, described method includes provides a light shield layout figure who is applied to a Quasar 90 irradiations, and described light shield layout figure includes a plurality of straight-line patterns parallel to each other, and between described isoline pattern, add a plurality of auxiliary patterns, and each auxiliary patterns all includes a plurality of geometric schemes with identical size, arrange along the direction that is parallel to described isoline pattern, and the auxiliary patterns such as described between wantonly two described straight-line patterns is with the rough five equilibrium of the line-spacing of described two straight-line patterns.
The inventive method system utilizes revises light shield layout figure, intensive (dense) or half intensive (semi-dense) district in meeting generation forbidden distance adds a plurality of geometric schemes that are arranged in a linear, just can improve the NILS value of exposure straight line, and need not change the device of exposure bench inside, therefore can reach that to carry out resolution with existing board and equipment higher and can improve the photoetching process of critical dimension again, with the yield of raising semiconductor product, and save and upgrade the required cost of board.
In order further to understand feature of the present invention and technology contents, see also following about detailed description of the present invention and accompanying drawing.Yet accompanying drawing is only for reference and aid illustration usefulness, is not to be used for the present invention is limited.
Description of drawings
Fig. 1 is the synoptic diagram of conventional lithography system.
Fig. 2 is the curve map of the NILS of live width 90nm to light shield layout figure line distance.
Fig. 3 is the synoptic diagram of Quasar 90 apertures that irradiation uses dish.
Fig. 4 is the synoptic diagram of the part pattern of a light shield layout figure.
Fig. 5 A is the inventive method adds auxiliary patterns in a light shield layout figure shown in Figure 4 synoptic diagram.
Fig. 5 B is the diplopia intensity behind the light shield layout exposure map shown in Fig. 5 A.
Fig. 6 is the synoptic diagram of the part pattern of another light shield layout figure.
Fig. 7 and Fig. 8 are applied to the synoptic diagram of light shield layout figure shown in Figure 6 for the inventive method.
Symbol description
10 etching systems, 12 scanners
14 light sources, 16 first lens
18,18a aperture dish 18b aperture pattern
18c central point 18d offset distance
20 second lens, 22 light shields
24 wafers, 26 exposure areas
50 light shield layout Figure 52 a, 52b, 52c straight-line pattern
54,56,58,60 auxiliary patterns 54a, 56a geometric scheme
100 light shield layout Figure 100 ' revise back light shield layout figure
The 102a first straight-line pattern 102b second straight-line pattern
102c the 3rd straight-line pattern 102d the 4th straight-line pattern
104,106,108 scattering strips, 110,112 auxiliary patterns
110a, 112a geometric scheme
Embodiment
Please refer to Fig. 3, Fig. 3 is the synoptic diagram of Quasar 90 apertures that irradiation uses dish 18a.Dish 18a surface, aperture includes four aperture pattern 18b, is four spoke shapes and is distributed in dish 18a edge, discoid aperture, and the configuration of this kind aperture pattern is called " Quasar ".For ease of explanation, the dish 18a definition of discoid aperture has a central point (center point) 18c and transverse axis X and Z-axis Y by central point 18c, and central point 18c defines by an offset distance 18d to the distance of aperture pattern 18b.As shown in Figure 3, offset distance 18d and the folded angle of transverse axis X are 90 degree, when using aperture dish 18a in scanner 12, promptly are to have used Quasar 90 irradiations as exposure light source in photoetching process therefore.Similarly, if offset distance 18d and transverse axis X angle are 45 degree, then use the light source of described kind of aperture dish 18a to be called Quasar 45 irradiations.Improve because the inventive method is the forbidden distance problem that is produced in mask pattern intensive (dense) and half compact district (semi-dense) at using Quasar 90 irradiations, so following examples all illustrate with the situation of using Quasar 90 irradiations.
Please refer to Fig. 4, Fig. 4 is the synoptic diagram of the part pattern of a light shield layout Figure 50, and light shield layout Figure 50 is in Quasar 90 irradiations that are applied to as shown in Figure 3.As shown in Figure 4, light shield layout Figure 50 includes many straight-line patterns parallel to each other, only draws the first straight-line pattern 52a, the second straight-line pattern 52b and the 3rd straight-line pattern 52c in Fig. 3.As shown in Figure 3, the live width L of first, second and the 3rd straight- line pattern 52a, 52b, 52c is about 90nm, and line-spacing S is about 220nm.By preamble as can be known, carry out photoetching process, can produce the problem of forbidden distance as if light shield layout Figure 50 is placed under Quasar 90 irradiations.
Please refer to Fig. 5 A, Fig. 5 A is the inventive method adds auxiliary patterns in a light shield layout Figure 50 shown in Figure 4 synoptic diagram.Shown in Fig. 5 A, in order to improve the resolution of light shield layout Figure 50 in photoetching process, add a plurality of auxiliary patterns 54,56,58,60 respectively in straight- line pattern 52a, 52b, 52c, and each auxiliary patterns 54,56,58,60 all includes a plurality of geometric schemes, arranges along the direction that is parallel to straight- line pattern 52a, 52b, 52c.With auxiliary patterns 54 is example, and it comprises a plurality of square and identical geometric scheme 54a of size of being, arrange along the direction that is parallel to straight-line pattern 52a, and to each other apart from equating.Similarly, also include the identical square geometric scheme 56a of a plurality of sizes at the first straight-line pattern 52a with another auxiliary patterns 56 between the second straight-line pattern 52b, and the auxiliary patterns 58,60 between the second straight-line pattern 52b and the 3rd straight-line pattern 52c is as the same.
It should be noted that, the principle that adds auxiliary patterns 54,56,58,60 is to make the auxiliary patterns (for example auxiliary patterns 54 and 56) between wantonly two straight-line patterns (for example straight- line pattern 52a, 52b) can be with the line-spacing five equilibrium between described two straight-line patterns, and the rough width that equals each auxiliary patterns of the line-spacing between each auxiliary patterns, for example rough width L1, the L2 that equals auxiliary patterns 54,56 of line-spacing S2 of 54,56 of auxiliary patterns, the i.e. length of side of geometric scheme 54a or geometric scheme 56a.According to above principle, can make the light shield layout figure between first, second, third straight- line pattern 52a, 52b, the 52c be the arrangement of one-period property.In the present embodiment, the wavelength of lighting source is 248nm, parameter when cooperating other to carry out photoetching process again, the length of side of design geometric scheme 54a and 56a is 40nm * 40nm, and the line-spacing of the five equilibrium first straight-line pattern 52a and the second straight-line pattern 52b, rough the equating of line-spacing S3 of the line-spacing S1, auxiliary patterns 54 that makes auxiliary patterns 54 and the first straight-line pattern 52a and the line-spacing S2 of auxiliary patterns 56 and auxiliary patterns 56 and the second straight-line pattern 52b.
Please refer to Fig. 5 B, Fig. 5 B is diplopia intensity (the aerial image intensity) curve map after the exposure of light shield layout Figure 50 shown in Fig. 5 A.With straight-line pattern 52b is the horizontal level initial point, after adding auxiliary patterns 54,56,58,60, can improve straight-line pattern 52b to the diplopia intensity curve slope between its both sides straight-line pattern 52a, the 52c, promptly improve diplopia contrast (aerial imagecontrast), can improve pattern herein by the resolution of photoetching to the photoresist layer, make the NILS value bring up to 2.5 from 1.15, avoid the problem of traditional forbidden distance.
Please refer to Fig. 6, Fig. 6 is the synoptic diagram of the part pattern of another light shield layout Figure 100.As shown in Figure 6, light shield layout Figure 100 includes one first straight-line pattern 102a parallel to each other, one second straight-line pattern 102b, one the 3rd straight-line pattern 102c and one the 4th straight-line pattern 102d, wherein, first, second and one the 3rd straight- line pattern 102a, 102b, 102c are compact district or half compact district, live width L is about 90nm, line-spacing S is about 180nm, and the 4th straight-line pattern 102d belongs to estranged (iso) district, with the line-spacing S ' of its both sides straight-line pattern greater than 700nm.Similarly, as previously mentioned, when light shield layout Figure 100 is applied to Quasar 90 off-axis irradiations, the problem of forbidden distance can take place at first, second and one the 3rd straight- line pattern 102a, 102b, 102c place.In addition, in conventional lithography process, the 4th straight-line pattern 102d that belongs to estranged district also have resolution relatively poor and with common process allowance (process window) problem of smaller of compact district.Therefore, for improving the problems referred to above, can use the inventive method and cooperate optical approaching correcting method, to avoid forbidden distance and to improve the common process allowance.
Please refer to Fig. 7 and Fig. 8, Fig. 7 and Fig. 8 are applied to the synoptic diagram of light shield layout Figure 100 shown in Figure 6 for the inventive method.At first, carry out an optics earlier near revision program, for example a reference type (rule-based) optics is near revising or the approaching correction of a simulation type (model-based) optics, to improve the design transfer deviation that original light shield layout Figure 100 produces because of the optics closing effect when exposing.As shown in Figure 7, when carrying out optics near the estranged district of correction improvement pattern resolution, many scattering strips (scattering bar) 104,106 have been added in the 4th straight-line pattern 102d both sides, and add a scattering strip 108 in the side of the 3rd straight-line pattern 102c, revise back light shield layout Figure 100 ' to obtain one.
Then, as shown in Figure 8, between first, second and the 3rd straight-line pattern 102a of meeting generation forbidden distance problem, 102b, 102c, add an auxiliary patterns 110 and 112 respectively, wherein each auxiliary patterns 110,112 all includes a plurality of geometric scheme 110a, 112a with identical size, is arranged in a linear along the direction that is parallel to the first straight-line pattern 102a.In the present embodiment, because the line-spacing S of first, second and the 3rd straight- line pattern 102a, 102b, 102c is less, therefore between the first straight-line pattern 102a and the second straight-line pattern 102b, only add an auxiliary patterns 110, and also only add an auxiliary patterns 112 between the 3rd straight-line pattern 102c and the second straight-line pattern 102b.In order to make the rough one-tenth periodic arrangement of line-spacing of first, second and the 3rd straight- line pattern 102a, 102b, 102c both sides, must make each auxiliary patterns 110,112 with line-spacing S five equilibrium.With auxiliary patterns 110 is example, rough line-spacing S1, the S2 that equals auxiliary patterns 110 and both sides first, second straight- line pattern 102a, 102b of its live width L1.
After finishing being provided with of auxiliary patterns 110,112, revise the just exportable light shield that is made into of back light shield layout Figure 100 ', be used in the etching system of Quasar 90 irradiations, can take into account the advantage of using Quasar 90 to improve array critical dimension simultaneously, also can improve the NILS value of Quasar 90 irradiations, avoid producing forbidden distance.
It is to be applied in the photoetching process of Quasar 90 irradiations that the present invention improves exposure straight line NILS method, applicable to the light source of different wave length and the lens of scanner, the principle that only adds auxiliary patterns is the line-spacing between each straight-line pattern of geometric scheme five equilibrium of described auxiliary patterns such as grade, so that can take place to present periodic arrangement because add auxiliary patterns between the straight-line pattern of forbidden distance, with the effect of the NILS that improves the exposure straight line.Yet, add numerical aperture (the numerical aperture of the size of the number of the auxiliary patterns between wantonly two straight-line patterns and auxiliary patterns and width system according to lens in the wavelength of Quasar 90 irradiations, the scanner, NA) and the line-spacing of described two straight-line patterns and determining, for example, when using the less light source of wavelength, a plurality of geometric scheme length of sides that auxiliary patterns comprised also need corresponding diminishing, and can are not principle by photoetching to the wafer photoresist layer in the lump with auxiliary patterns.Therefore, by number, width and the line-spacing of adjusting the auxiliary patterns that adds in two straight-line patterns, but the just NILS value of optimization straight-line pattern.According to the inventive method, NILS value the best can reach 2.5.
Compared to conventional art, the method that the present invention improves the NILS of exposure straight line is to utilize to add auxiliary patterns in light shield layout figure, with diplopia contrast and the raising NILS value of improving exposing patterns, avoid the forbidden distance problem of tradition because of using Quasar 90 irradiations to produce.Therefore, utilize the inventive method, can not need change exposure bench or its intraware, just can effectively improve the resolution of photoetching process, save the cost that upgrades board.
The above only is the preferred embodiments of the present invention, and all equalizations of doing according to spirit of the present invention change and modify, and all should belong to covering scope of the present invention.
Claims (18)
1. method of standard video log slope that improves the exposure straight line, described method includes:
One light shield layout figure is provided, and it is applied in a Quasar 90 irradiations, and described light shield layout figure one second straight-line pattern that includes at least one first straight-line pattern and be parallel to described first straight-line pattern; And
Between described first straight-line pattern and described second straight-line pattern, add one first auxiliary patterns, described first auxiliary patterns includes a plurality of geometric schemes with identical size, arrange along one first rectilinear direction, described first rectilinear direction is parallel to described first straight-line pattern.
2. according to the process of claim 1 wherein the line-spacing of the described first auxiliary patterns five equilibrium described first and second straight-line pattern.
3. according to the process of claim 1 wherein that described geometric scheme such as grade is a square pattern.
4. according to the method for claim 3, the length of side of square pattern such as wherein said and rough the equating of line-spacing of described first auxiliary patterns distance described first and second straight-line pattern.
5. according to the method for claim 1, wherein said method also includes and add one second auxiliary patterns between described first straight-line pattern and described first auxiliary patterns, described second auxiliary patterns includes a plurality of geometric schemes with identical size, arrange along one second rectilinear direction, described second rectilinear direction is parallel to described first straight-line pattern.
6. according to the method for claim 5, all rough line-spacing that is equal to described first auxiliary patterns and described second straight-line pattern of the line-spacing of wherein said second auxiliary patterns and described first auxiliary patterns, described first straight-line pattern.
7. carry out an optics near revising according to the process of claim 1 wherein that described method also includes,, carry out again described first auxiliary patterns is added step among the described revised light shield layout figure to obtain a revised light shield layout figure.
8. method of standard video log slope that improves the exposure straight line, described method includes:
One light shield layout figure is provided, and it is to be applied in a Quasar 90 irradiations, and described light shield layout figure includes a plurality of straight-line patterns parallel to each other; And
Between described isoline pattern, add a plurality of auxiliary patterns, each described auxiliary patterns includes a plurality of geometric schemes with identical size, arrange along the direction that is parallel to described isoline pattern, and the auxiliary patterns such as described between wantonly two described straight-line patterns is with the rough five equilibrium of the line-spacing of described two straight-line patterns.
9. method according to Claim 8 wherein adds auxiliary patterns number between wantonly two described straight-line patterns and is the line-spacing of described two straight-line patterns of foundation and determines.
10. method according to Claim 8 wherein adds auxiliary patterns number between wantonly two described straight-line patterns and width and is according to the numerical aperture of lens of Quasar 90 irradiations and determines.
11. method according to Claim 8, the width of wherein said auxiliary patterns such as grade is to determine according to the wavelength of described Quasar 90 irradiations.
12. method according to Claim 8, the wavelength of wherein said Quasar 90 irradiations are 248 nanometers (nm).
13. according to the method for claim 12, the NILS of wherein said isoline pattern can be increased to more than 2.5.
14. according to the method for claim 12, the line-spacing of wherein said isoline pattern is about the 180-250 nanometer.
15. according to the method for claim 14, the live width of wherein said isoline pattern is about 90 nanometers.
16. method according to Claim 8, wherein said geometric scheme such as grade is a square pattern.
17. according to the method for claim 16, the rough line-spacing that equals described isoline pattern described auxiliary patterns adjacent thereto of the length of side of square pattern such as wherein said.
Carry out an optics near revising 18. method according to Claim 8, wherein said method also include,, carry out again the described auxiliary patterns that waits is added to step among the described revised light shield layout figure to obtain a revised light shield layout figure.
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| CN 200410031219 CN1673867A (en) | 2004-03-26 | 2004-03-26 | Method for raising standard image logarithmic slope of exposure straight line |
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| CN 200410031219 CN1673867A (en) | 2004-03-26 | 2004-03-26 | Method for raising standard image logarithmic slope of exposure straight line |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101158804B (en) * | 2006-10-02 | 2013-01-02 | 三星电子株式会社 | Mask for forming fine pattern and method of forming the same |
| CN103163729A (en) * | 2011-12-16 | 2013-06-19 | 南亚科技股份有限公司 | Photomask |
| CN104166304A (en) * | 2013-05-17 | 2014-11-26 | 联华电子股份有限公司 | Correction method for auxiliary pattern |
| CN111025856A (en) * | 2019-12-25 | 2020-04-17 | 中国科学院微电子研究所 | Method for determining photoetching process node forbidden period and simulation method |
| CN116736627A (en) * | 2023-08-14 | 2023-09-12 | 合肥晶合集成电路股份有限公司 | OPC modeling method |
-
2004
- 2004-03-26 CN CN 200410031219 patent/CN1673867A/en active Pending
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101158804B (en) * | 2006-10-02 | 2013-01-02 | 三星电子株式会社 | Mask for forming fine pattern and method of forming the same |
| CN103163729A (en) * | 2011-12-16 | 2013-06-19 | 南亚科技股份有限公司 | Photomask |
| US8822104B2 (en) | 2011-12-16 | 2014-09-02 | Nanya Technology Corporation | Photomask |
| CN103163729B (en) * | 2011-12-16 | 2015-08-19 | 南亚科技股份有限公司 | Light shield |
| CN104166304A (en) * | 2013-05-17 | 2014-11-26 | 联华电子股份有限公司 | Correction method for auxiliary pattern |
| CN104166304B (en) * | 2013-05-17 | 2020-01-21 | 联华电子股份有限公司 | Method for correcting auxiliary pattern |
| CN111025856A (en) * | 2019-12-25 | 2020-04-17 | 中国科学院微电子研究所 | Method for determining photoetching process node forbidden period and simulation method |
| CN116736627A (en) * | 2023-08-14 | 2023-09-12 | 合肥晶合集成电路股份有限公司 | OPC modeling method |
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