CN1261821C - Three-dimensional mask - Google Patents
Three-dimensional mask Download PDFInfo
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- CN1261821C CN1261821C CN 200410080758 CN200410080758A CN1261821C CN 1261821 C CN1261821 C CN 1261821C CN 200410080758 CN200410080758 CN 200410080758 CN 200410080758 A CN200410080758 A CN 200410080758A CN 1261821 C CN1261821 C CN 1261821C
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- mask
- pattern
- light
- transmittable layers
- openings
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- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
The present invention discloses a three-dimension stereo mask. The present invention can increase the thickness of a light proof layer on the circumference of a mask upper boundary pattern, can increase the path length of incident light passing through the boundary pattern and can improve the optical coherence of the incident light passing through the boundary pattern. Therefore, the present invention can decrease optical proximity effects because of light interference and can reduce exposed border pattern deformation or insufficient focus depth, and the three-dimension stereo mask can expose good patterns.
Description
The application is that application number is 01123723.6, the applying date be July 26 calendar year 2001 day, be called the dividing an application of application for a patent for invention of " three-D stereo mask ".
Technical field
The present invention relates to a kind of semiconductor device, and be particularly related to a kind of three-D stereo mask, it can obtain good border pattern, promotes the effect of photolithographic exposure.
Background technology
In semi-conductor industry, the making of photoresistance pattern is to utilize photolithographic exposure tool such as stepper or scanning machine, and exposure is to define required pattern on photosensitive material.Its step at first on the semiconductor-based end after the coating one deck photoresist layer, utilize exposure tool with the graphic pattern projection on the mask to photoresist layer, use developer to develop the part of photoresist layer exposure then, make photoresist layer show pattern on the mask.Utilize this patterned light blockage layer for the cover curtain afterwards, carry out follow-up etching or ion implantation technology.
Mask is substrate with the transparent plate generally, forms opaque circuit and define required pattern on flat board.Transparent plate generally is made of quartz, and opaque circuit then defines required circuit pattern by etching chromium (Chrome) layer.With the incident light irradiation mask that radiating light source sends, the pattern of process mask covers and x-ray diffraction forms image, and through optical projection system virtual image is incident upon on the photoresist layer.About exposure technique its illustrate further can be with reference to pages274-276 of VLSI Technology edited by S.M.Sze ( 1983).
Please refer to Fig. 1, it is the structural profile synoptic diagram of traditional mask.Utilize technology such as etching, printing, on transparency carrier 102, form opaque chromium layer 104, form mask 100 whereby with patterns of openings 106.Generally, the patterns of openings 106 on the mask 100 is periodic intensive pattern, therefore when decision light source condition, numerical aperture (NumericalAperture, NA) and coherence of light (coherence) σ all be at infinite cycle simulation calculation.Yet, when the mask pattern of practical application at limit cycle, for third edge pattern optical proximity effect (OPE) can take place, make the third edge pattern that exposes deform, or the not enough problem of the depth of focus (DOF).As shown in Figure 2, the pattern 200 that its expression uses traditional mask 100 to expose on photoresist layer, it obtains with identical pattern on the mask 100 at middle body 202, but 204 phenomenons that deform in marginal portion make the live width d of pattern of marginal portion 204 amplify undesiredly or dwindle.Cause product to be short-circuited or the phenomenon that opens circuit easily like this, thereby dwindle the processing range (processwindow) of border figure.
One of principal element that causes optical proximity effect (OPE) is the interference of light of adjacent patterns.Traditionally, by suitably being out of shape in the mode that obtains correct exposing patterns, mask pattern is called optical proximity correction (OPC).But optical proximity correction (OPC) must cooperate its light source condition, for different light sources, promptly must do suitably to revise to OPC, could obtain desirable exposing patterns, and this causes the application of OPC mask to be restricted.
Summary of the invention
In order to overcome the deficiencies in the prior art, the invention provides a kind of three-D stereo mask, it can improve the boundary graph crime shape phenomenon that changes, and applicable to various light source.
The invention provides a kind of three-D stereo mask, be applicable to a photolithographic exposure system.This three-D stereo mask comprises a substrate photic zone and a light non-transmittable layers at least.Light non-transmittable layers is positioned on the substrate photic zone, has a patterns of openings in the light non-transmittable layers, and has an edge opening in the patterns of openings.And a collimation projection is set, is positioned on the light non-transmittable layers of rim openings periphery.Because the setting of this collimation projection has improved the interference of light of adjacent patterns, and must make the exposure of photoresist layer more accurate.
The present invention also provides a kind of three-D stereo mask, is applicable to a photolithographic exposure system.This three-D stereo mask comprises a substrate photic zone; One light non-transmittable layers, be positioned on this substrate photic zone, have a patterns of openings in this light non-transmittable layers, have a curved surface profile in this light non-transmittable layers of this patterns of openings, and at the thickness of this curved surface light non-transmittable layers at patterns of openings edge greater than thickness in the curved surface light non-transmittable layers of patterns of openings central authorities.
Three-D stereo mask of the present invention can solve the border figure because the distortion that optical proximity effect causes or the problem of depth of focus deficiency by the conditions of exposure of the coherence of light of change border pattern.
Advantage of the present invention is: the thickness of the light non-transmittable layers by increasing mask coboundary pattern periphery, increase the path of incident light by the border pattern, improve coherence of light by the incident light of border pattern, reduce whereby because the optical proximity effect that the interference of light caused, reduce the boundary graph crime expose the change shape or the problem of depth of focus deficiency, make three-D stereo mask can expose good figure, and applicable to various light source.
Description of drawings
The present invention is described in detail below in conjunction with drawings and Examples:
Fig. 1 is the structural profile synoptic diagram of traditional mask;
The pattern that Fig. 2 is to use traditional mask to be exposed on photoresist layer can produce the distortion or the problem of depth of focus deficiency at intensive pattern boundary member;
Fig. 3 is the diagrammatic cross-section of the present invention's first preferred embodiment three-D stereo mask structure;
The pattern that Fig. 4 is to use three-D stereo mask of the present invention to be exposed on photoresist layer is identical with pattern on the mask;
Fig. 5 is the diagrammatic cross-section of the present invention's second preferred embodiment three-D stereo mask structure.
Symbol complete list among the figure
| Fig. 1 | Fig. 2 | Fig. 3 | ||||
| Reference numeral | Parts or parameter | Reference numeral | Parts or parameter | Reference numeral | Parts or | |
| 100 | | 200 | Exposing patterns | 300 | | |
| 102 | | 202 | Middle body | 302 | The substrate | |
| 104 | The | 204 | The marginal portion | 304 | Light | |
| 106 | Patterns of openings | d | Width | 306 | The collimation projection | |
| 308 | The border opening | |||||
| h | Highly | |||||
| Fig. 4 | Fig. 5 | |||||
| 400 | Exposing patterns | 500 | Mask | 506 | The curved surface profile | |
| 402 | Central authorities' pattern | 502 | The substrate photic zone | 508 | The marginal portion | |
| 404 | Third edge pattern | 504 | Light non-transmittable layers | 510 | Middle body | |
| 505 | Patterns of openings | 512 | Rim openings | |||
Embodiment
The invention provides a kind of three-D stereo mask, by on mask, forming the mask pattern of 3 D stereo, can change the coherence of the incident light of third edge pattern, can improve the optical proximity effect of third edge pattern whereby, reduce third edge pattern generation pattern deformation or focus on not enough situation, and can be applied to various light source.
Please refer to Fig. 3, it is the diagrammatic cross-section of the present invention's first preferred embodiment three-D stereo mask structure.Three-D stereo mask 300 of the present invention mainly comprises a bottom photic zone 302, and the transparency carrier that its material is used as traditional mask for example is high transparent quartz.Have the light non-transmittable layers 304 of mask open pattern 305 on bottom photic zone 302 for one deck, wherein patterns of openings 305 is required circuit pattern in the general photolithographic exposure technology.These light non-transmittable layers 304 employed materials are such as being chromium (Cr), chromium oxide (CrOx), or other light tight material.On the light non-transmittable layers 304 of rim openings 308 peripheries of patterns of openings 305, have collimation projection 306, collimate the exposure effect that projection 306 can be improved third edge pattern whereby.Collimation projection 306 employed materials also be light tight material, and such as being chromium or chromium oxide etc., its material can follow light non-transmittable layers 304 identical, can also use with the different material of light non-transmittable layers 304.The height h of general collimation projection 306 is about 2-15 times of light non-transmittable layers 304 thickness, and the degree of the optical proximity effect (OPE) of its height h visual pattern adjusts.
Three-D stereo mask 300 of the present invention is such as being to form with etching mode.Use the material of chromium and collimation projection 306 to use chromium oxide to be example with the material of light non-transmittable layers 304.At first on bottom photic zone 302, form chromium layer and chromium oxide layer in regular turn, then utilize first pattern to carry out etching and produce collimation projection 306, and then carry out etching with second pattern and produce light non-transmittable layers 304 with patterns of openings 305.Collimation projection 306 and light non-transmittable layers 304 can obtain preferable THICKNESS CONTROL if use unlike material.If collimation projection 306 and light non-transmittable layers 304 used identical material, can etch by time control and collimate after the projection 306, go out patterns of openings 305 with second pattern etching again.
Three-D stereo mask 300 of the present invention can directly apply to traditional light source, and it is preferable with off-axis illumination (Off-axisillumination), for example be ring-type (annular) light source, four utmost points (quadrapole) light source or two utmost points (dipole) light source etc., applied lambda1-wavelength comprises 365nm, 248nm or 193nm etc.Collimation projection 306 of the present invention can change the coherence of light (coherence) by rim openings 308 incident lights, by increasing the path of incident light by rim openings 308, can make coherence of light increase by the incident light of rim openings 308, improve the depth of focus of third edge pattern whereby, and keep original pattern, avoid third edge pattern to produce distortion.The pattern 400 that Fig. 4 is to use three-D stereo mask 300 of the present invention to expose on photoresist layer, central authorities' pattern 402 can be kept original mask pattern, and third edge pattern 404, promptly partly (its periphery is intensive pattern to half isoline (semi-isoline) on one side, another side is the pattern-free district), because coherence of light improves, light intensity distributions (Aerialimage) is improved, it can keep original mask pattern, and obtain the good focusing degree of depth, therefore the processing range (processwindow) in the time of can making exposure enlarges, and improves process conditions.
Please refer to Fig. 5, the present invention also provides another kind of three-D stereo mask, then will describe with second preferred embodiment.Three-D stereo mask 500 of the present invention mainly comprises a bottom photic zone 502, and its material is such as being high transparent quartz etc.Have the light non-transmittable layers 504 of mask open pattern 505 on bottom photic zone 502 for one deck, wherein patterns of openings 505 is the pattern in the general photolithographic fabrication process.Light non-transmittable layers 504 employed materials are such as being chromium (Cr), chromium oxide (CrOx), or other light tight material.Light non-transmittable layers 504 at patterns of openings 505 places has a curved surface profile 506, and this curved surface profile is an invaginated type, middle low and edge height.Therefore, at the thickness of patterns of openings 505 marginal portions 508 light non-transmittable layers 504 greater than thickness in patterns of openings 505 middle bodies 510 light non-transmittable layers 504.General in the marginal portion 508 light non-transmittable layers 504 thickness be about middle body 510 light non-transmittable layers 504 thickness 2-15 doubly.Need look patterns of openings 505 as for the curved surface profile 506 of light non-transmittable layers 504 designs.
Three-D stereo mask 500 of the present invention can directly apply to various conventional light source, for example is ring-type (annular) light source, four utmost points (quadrapole) light source or two utmost points (dipole) light source etc.Applied lambda1-wavelength comprises 365nm, 248nm or 193nm etc.Three-D stereo mask 500 of the present invention goes out the height profile of curved surface profile 506 according to the graphics calculations of patterns of openings 505, makes that the coherence of light by the incident light after the patterns of openings 505 can be fit to each opening.In patterns of openings 505, the thickness of the light non-transmittable layers 504 of rim openings 512 peripheries is thicker, and is therefore longer at the channel of rim openings 512, can improve its coherence of light whereby, makes the incident light by mask 500 that preferable light intensity distributions can be arranged.
In sum, three-D stereo mask provided by the present invention can solve the border figure because the figure deformation that optical proximity effect causes or the problem of depth of focus deficiency by changing the coherence of light at the incident light of border pattern.
As understood by those skilled in the art, the above is preferred embodiment of the present invention only, is not in order to limit protection scope of the present invention; All other do not break away from the equivalence of being finished under the disclosed spirit and changes or modification, all should be included in the protection domain of patent of the present invention.
Claims (6)
1. three-D stereo mask comprises:
One substrate photic zone;
One light non-transmittable layers is positioned on this substrate photic zone, and this light non-transmittable layers has a patterns of openings, and has an edge opening in this patterns of openings; And
One collimation projection is positioned on the light non-transmittable layers of periphery of this rim openings, and thickness of this collimation projection be 2-15 times of this light non-transmittable layers thickness.
2. mask according to claim 1 is characterized in that: the euphotic material of this substrate comprises quartz.
3. mask according to claim 1 is characterized in that: the material of this light non-transmittable layers comprises chromium.
4. mask according to claim 1 is characterized in that: the material of this light non-transmittable layers comprises chromium oxide.
5. mask according to claim 1 is characterized in that: the material of this collimation projection comprises chromium.
6. mask according to claim 1 is characterized in that: the material of this collimation projection comprises chromium oxide.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200410080758 CN1261821C (en) | 2001-07-26 | 2001-07-26 | Three-dimensional mask |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200410080758 CN1261821C (en) | 2001-07-26 | 2001-07-26 | Three-dimensional mask |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB011237236A Division CN1178275C (en) | 2001-07-26 | 2001-07-26 | Three-D stereo mask |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1595294A CN1595294A (en) | 2005-03-16 |
| CN1261821C true CN1261821C (en) | 2006-06-28 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200410080758 Expired - Fee Related CN1261821C (en) | 2001-07-26 | 2001-07-26 | Three-dimensional mask |
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| Country | Link |
|---|---|
| CN (1) | CN1261821C (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP3410214A4 (en) * | 2016-01-27 | 2019-01-23 | LG Chem, Ltd. | Film mask, method for manufacturing same, and method for forming pattern using film mask and pattern formed thereby |
| JP6690814B2 (en) | 2016-01-27 | 2020-04-28 | エルジー・ケム・リミテッド | Film mask, method for manufacturing the same, and pattern forming method using the same |
| CN108351604B (en) | 2016-01-27 | 2020-10-30 | 株式会社Lg化学 | Film mask, method for manufacturing the same, pattern forming method using the film mask, and pattern formed by the film mask |
| CN109407461B (en) * | 2018-10-26 | 2022-04-12 | 京东方科技集团股份有限公司 | Photomask, method of manufacturing the same, and method of manufacturing display device |
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- 2001-07-26 CN CN 200410080758 patent/CN1261821C/en not_active Expired - Fee Related
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| Publication number | Publication date |
|---|---|
| CN1595294A (en) | 2005-03-16 |
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Granted publication date: 20060628 Termination date: 20190726 |