CN1534839A - Method of semiconductor laser cavity surface passivation - Google Patents
Method of semiconductor laser cavity surface passivation Download PDFInfo
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- CN1534839A CN1534839A CNA031084443A CN03108444A CN1534839A CN 1534839 A CN1534839 A CN 1534839A CN A031084443 A CNA031084443 A CN A031084443A CN 03108444 A CN03108444 A CN 03108444A CN 1534839 A CN1534839 A CN 1534839A
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- semiconductor laser
- cavity surface
- deactivation
- processing method
- surface processing
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Abstract
A method for passivating the cavity surface of semiconductor laser device includes opitaxially growing semiconductor laser device structure on N-tye substrate, coating photoresist, etching, corrosion, He ion transplantation, removing photoresist, conventional preparing until P and N surface electrode steps, cleavaging the eptaxial chip to obtain cavity, coating low-reflectivity and high-reflectivity films on front and back cavity surfaces respectively, cleavaging strip to become cores, sintering, welding leading wires and packaging.
Description
Technical field
The present invention relates to a kind of method of deactivation of semiconductor laser cavity surface, be applicable to semiconductor ridge waveguide laser, wide semiconductor laser, semiconductor laser arrays.
Background technology
Semiconductor laser has obtained using widely as a kind of opto-electronic device in a lot of fields.The prerequisite that semiconductor laser obtains to use is to have high reliability.The factor that influences reliability of semiconductor laser is a lot, and wherein main cause is that the chamber face is degenerated and chamber face catastrophic optical damage damage (COD, Catastrophic Optical Damage).The approach that improves reliability of semiconductor laser has following several:
1) vacuum cleavage coating technique.Under high vacuum environment, finish the cleavage and the coating process of epitaxial wafer, prevented the pickup of impurity such as oxygen and carbon, therefore improved the reliability of semiconductor laser the chamber face.But this technical sophistication, apparatus expensive.
2) special material carry out the end face passivation (see Electron.Lett., 1996,32:352-353 and J.Vac.Sci.Technol., 1994, A12 (4), 1063-1067).Use (NH
4)
2S
xAfter carrying out the end face passivation, reduce surface density of states, thereby reduced the surface non-radiative recombination rate, improved the COD threshold value.But the long-term reliability of sulfur passivation laser awaits further research.
3) end form non-absorption window technology (see IEEE Photonics Technology Letters, 1998, vol.10, No.9,1226-1228).Use repeatedly near epitaxy technology regrowth one deck high band gap materials end face, form the transparent window of output light, reduce the absorption of light.The shortcoming of this technology is: need repeatedly epitaxial growth, technical sophistication.
Summary of the invention
The objective of the invention is to propose a kind of processing method of deactivation of semiconductor laser cavity surface, adopt this method can prevent that electric current from entering into face zone, chamber, thereby reduced the non-radiative recombination rate of chamber face, improved the COD threshold value, can improve the long-term reliability of semiconductor laser.This method can be applicable to semiconductor ridge waveguide laser, wide laser of semiconductor, semi-conductor array laser.
A kind of deactivation of semiconductor laser cavity surface processing method of the present invention is characterized in that, comprises the steps:
(1) epitaxial growth semiconductor laser structure successively on N type substrate: comprise lower limit layer, lower waveguide layer, quantum well layer, go up ducting layer, upper limiting layer, ohmic contact layer;
(2) epitaxial wafer ohmic contact aspect is coated with the eurymeric photoresist;
(3) use reticle along carrying out the standard photoetching perpendicular to the direction of laser resonant cavity;
(4) corrosion;
(5) the helium ion injects;
(6) remove photoresist;
(7) carry out conventional semiconductor laser manufacturing, until finishing p side electrode and N face electrode process;
(8) middle with the slivering of epitaxial wafer cleavage along the wide helium ion implanted region territory of 50um, the chamber is long to be 900um;
(9) preceding rear facet plates antiradar reflectivity film and high reflection film respectively;
(10) bar is cleaved into tube core;
(11) tube core be sintered to heat sink, the pressure welding contact conductor, the whole technical process that semiconductor laser is made is finished in encapsulation.
Wherein step (2) is coated with the eurymeric photoresist, and thickness is 5um.
Wherein the reticle of step (3) is the reticle of 50um/900um, along the ion implanted region territory that makes 50um perpendicular to the direction of laser resonant cavity by lithography.
Wherein the corrosive liquid of step (4) is a sulfuric acid: hydrogen peroxide: water=4: 1: 1 corrosive liquids, and temperature: 0 ℃, the time: 20s.
Wherein step (5) helium ion injects, and its energy is less than 30kev, and dosage equals 4E13cm
-2
Application helium ion is injected into the zone of the about 25um of chamber face near, and after injecting through the helium ion, this zone obtains high resistivity, thereby block current flow is injected into the chamber face thus; Therefore reduce the non-radiative compound generation of chamber face, improved chamber face catastrophe damage threshold, helped improving the long-term reliability of semiconductor laser.
The characteristics of this method are: use the helium ion and be injected into chamber face near zone, should obtain high resistivity in the zone after injecting through the helium ion, block current flow is injected into the chamber face thus, therefore forms the non-injection region of electric current of chamber face.This method is simple and practical, is suitable for semiconductor ridge waveguide laser, wide semiconductor laser, semiconductor laser arrays.
Description of drawings
Fig. 1 is a 50um/900um reticle schematic diagram;
Fig. 2 is the generalized section of ridge waveguide laser.
Embodiment
See also Fig. 1, Fig. 1 is a 50um/90um reticle schematic diagram; When using the eurymeric photoresist, 50um bright wisp shape 10 is the exposure area, forms the window that ion injects; Filaments of sun shape 11 is the photoresist reserve area, as the protective film of nonionic injection zone; The cycle of reticle is 900um, the middle cleavage tube core along the ion implanted region territory, and the tube core chamber is long to be 900um.
In conjunction with Fig. 1, Fig. 2, be example with the ridge waveguide semiconductor laser, use the helium ion injection formation non-injection region of surface current, chamber technology and may further comprise the steps:
(1) epitaxial growth: epitaxial growth semiconductor laser structure successively on N type substrate 21: comprise lower limit layer 22, lower waveguide layer 23, quantum well layer 24, go up ducting layer 25, upper limiting layer 26, ohmic contact layer 27.
(2) gluing: ohmic contact layer 27 faces at epitaxial wafer are coated the eurymeric photoresist, the rotating speed and the time of even glue of control and whirl coating, and make photoresist thickness reach 5um, the photoresist that 5um is thick can provide excellent protection for the nonionic injection zone.
(3) photoetching: the reticle of using 50um/900um shown in Figure 1 is along carrying out the standard photoetching perpendicular to the direction of laser resonant cavity.(through behind the exposure imaging, in one-period, form the wide ion implanted region territory of 50um, the wide zone of other 850um is the nonionic injection zone, and the chamber of tube core is long in the future is 900um).
(4) corrosion: using sulfated: hydrogen peroxide: water=4: 1: 1 corrosive liquids, temperature: 0 ℃, the time: 20s;
Effect: ohmic contact layer 27 is slightly corroded, as the alignment mark of future during cleavage.
(5) the helium ion injects: energy equals 30kev, and dosage equals 4E13cm
-2, prevent channeling effect.Effect: inject the formation high resistance area by ion, this region limits electric current is injected into the chamber face thus, suppresses the degeneration of chamber face, has improved the reliability of laser.
(6) remove photoresist, prepare to enter conventional semiconductor laser manufacture craft.
(7) carry out conventional ridge waveguide semiconductor laser manufacturing, until finishing p side electrode 28 and N face electrode 20 technologies.Note: enter after the step (7) deposition SiO
2(silicon dioxide) or SiN
xO
yAll to use PECVD (plasma enhanced chemical vapor deposition) cryogenic conditions (about 90 ℃) during (silicon oxynitride) insulating barrier, high resistance area be lost efficacy to prevent high-temperature thermal annealing.
(8) in the middle of the helium ion implanted region territory of 50um with the slivering of epitaxial wafer cleavage, the non-injection region of electric current of 25um is respectively arranged near the rear facet before making.
(9) cavity surface film coating: end plating high reflection film, end plating antiradar reflectivity film.
(10) cleavage tube core: the bar behind the plated film is cleaved into tube core.
(11) tube core be sintered to heat sink, the pressure welding contact conductor, the encapsulation, finish the whole technical process of semiconductor laser.
Claims (6)
1, a kind of deactivation of semiconductor laser cavity surface processing method is characterized in that, comprises the steps:
(1) epitaxial growth semiconductor laser structure successively on N type substrate: comprise lower limit layer, lower waveguide layer, quantum well layer, go up ducting layer, upper limiting layer, ohmic contact layer;
(2) epitaxial wafer ohmic contact aspect is coated with the eurymeric photoresist;
(3) use reticle along carrying out the standard photoetching perpendicular to the direction of laser resonant cavity;
(4) corrosion;
(5) the helium ion injects;
(6) remove photoresist;
(7) carry out conventional semiconductor laser manufacturing, until finishing p side electrode and N face electrode process;
(8) middle with the slivering of epitaxial wafer cleavage along the wide helium ion implanted region territory of 50um, the chamber is long to be 900um;
(9) preceding rear facet plates antiradar reflectivity film and high reflection film respectively;
(10) bar is cleaved into tube core;
(11) tube core be sintered to heat sink, the pressure welding contact conductor, the whole technical process that semiconductor laser is made is finished in encapsulation.
2, deactivation of semiconductor laser cavity surface processing method according to claim 1 is characterized in that, wherein step (2) is coated with the eurymeric photoresist, and thickness is 5um.
3, deactivation of semiconductor laser cavity surface processing method according to claim 1 is characterized in that, wherein the reticle of step (3) is the reticle of 50um/900um, along the ion implanted region territory that makes 50um perpendicular to the direction of laser resonant cavity by lithography.
4, deactivation of semiconductor laser cavity surface processing method according to claim 1 is characterized in that, wherein the corrosive liquid of step (4) is a sulfuric acid: hydrogen peroxide: water=4: 1: 1 corrosive liquids, and temperature: 0 ℃, the time: 20s.
5, deactivation of semiconductor laser cavity surface processing method according to claim 1 is characterized in that, wherein step (5) helium ion injects, and its energy is less than 30kev, and dosage equals 4E13cm
-2
6, deactivation of semiconductor laser cavity surface processing method according to claim 1 or 5, it is characterized in that, use the zone that the helium ion is injected near the about 25um of chamber face, after injecting through the helium ion, this zone obtains high resistivity, thereby block current flow is injected into the chamber face thus; Therefore reduce the non-radiative compound generation of chamber face, improved chamber face catastrophe damage threshold, helped improving the long-term reliability of semiconductor laser.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA031084443A CN1534839A (en) | 2003-03-31 | 2003-03-31 | Method of semiconductor laser cavity surface passivation |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA031084443A CN1534839A (en) | 2003-03-31 | 2003-03-31 | Method of semiconductor laser cavity surface passivation |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100388573C (en) * | 2005-04-30 | 2008-05-14 | 北京工业大学 | Method for deactivation of semiconductor laser cavity surface |
| CN100397735C (en) * | 2005-10-29 | 2008-06-25 | 深圳新飞通光电子技术有限公司 | Ridge waveguide type semiconductor laser and its manufacturing method |
| CN102593711A (en) * | 2012-03-21 | 2012-07-18 | 中国工程物理研究院应用电子学研究所 | Semiconductor laser strengthening radiation and preparation method thereof |
| CN105633793A (en) * | 2016-03-28 | 2016-06-01 | 长春理工大学 | Facet passivation method of semiconductor laser |
| CN107069433A (en) * | 2017-06-20 | 2017-08-18 | 中国科学院半导体研究所 | GaN base ultraviolet laser wafer, chip of laser and laser and preparation method thereof |
| CN108832483A (en) * | 2018-06-27 | 2018-11-16 | 潍坊华光光电子有限公司 | A kind of preparation method of ridged semiconductor laser diode |
-
2003
- 2003-03-31 CN CNA031084443A patent/CN1534839A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100388573C (en) * | 2005-04-30 | 2008-05-14 | 北京工业大学 | Method for deactivation of semiconductor laser cavity surface |
| CN100397735C (en) * | 2005-10-29 | 2008-06-25 | 深圳新飞通光电子技术有限公司 | Ridge waveguide type semiconductor laser and its manufacturing method |
| CN102593711A (en) * | 2012-03-21 | 2012-07-18 | 中国工程物理研究院应用电子学研究所 | Semiconductor laser strengthening radiation and preparation method thereof |
| CN105633793A (en) * | 2016-03-28 | 2016-06-01 | 长春理工大学 | Facet passivation method of semiconductor laser |
| CN107069433A (en) * | 2017-06-20 | 2017-08-18 | 中国科学院半导体研究所 | GaN base ultraviolet laser wafer, chip of laser and laser and preparation method thereof |
| CN108832483A (en) * | 2018-06-27 | 2018-11-16 | 潍坊华光光电子有限公司 | A kind of preparation method of ridged semiconductor laser diode |
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