CN1528956A - 一种磁场下生长低缺陷密度直拉硅单晶的方法 - Google Patents
一种磁场下生长低缺陷密度直拉硅单晶的方法 Download PDFInfo
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- CN1528956A CN1528956A CNA2003101080039A CN200310108003A CN1528956A CN 1528956 A CN1528956 A CN 1528956A CN A2003101080039 A CNA2003101080039 A CN A2003101080039A CN 200310108003 A CN200310108003 A CN 200310108003A CN 1528956 A CN1528956 A CN 1528956A
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- germanium
- silicon
- magnetic field
- density
- growth
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 35
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 35
- 239000010703 silicon Substances 0.000 title claims abstract description 35
- 238000000034 method Methods 0.000 title claims abstract description 10
- 239000013078 crystal Substances 0.000 claims abstract description 22
- 229910052732 germanium Inorganic materials 0.000 claims abstract description 20
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims abstract description 20
- 239000010453 quartz Substances 0.000 claims abstract description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 8
- 229920005591 polysilicon Polymers 0.000 claims description 8
- 230000007547 defect Effects 0.000 abstract description 9
- 239000007789 gas Substances 0.000 abstract description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 4
- 239000001301 oxygen Substances 0.000 abstract description 4
- 229910052760 oxygen Inorganic materials 0.000 abstract description 4
- 239000011800 void material Substances 0.000 abstract description 2
- 230000007812 deficiency Effects 0.000 abstract 3
- 230000005389 magnetism Effects 0.000 abstract 2
- 239000007788 liquid Substances 0.000 abstract 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 abstract 1
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 230000002950 deficient Effects 0.000 description 6
- 230000010354 integration Effects 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 3
- 239000002210 silicon-based material Substances 0.000 description 3
- 238000000149 argon plasma sintering Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
Claims (2)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN 200310108003 CN1233883C (zh) | 2003-10-15 | 2003-10-15 | 一种磁场下生长低缺陷密度直拉硅单晶的方法 |
Applications Claiming Priority (1)
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CN 200310108003 CN1233883C (zh) | 2003-10-15 | 2003-10-15 | 一种磁场下生长低缺陷密度直拉硅单晶的方法 |
Publications (2)
Publication Number | Publication Date |
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CN1528956A true CN1528956A (zh) | 2004-09-15 |
CN1233883C CN1233883C (zh) | 2005-12-28 |
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CN 200310108003 Expired - Fee Related CN1233883C (zh) | 2003-10-15 | 2003-10-15 | 一种磁场下生长低缺陷密度直拉硅单晶的方法 |
Country Status (1)
Country | Link |
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CN (1) | CN1233883C (zh) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1332072C (zh) * | 2005-01-20 | 2007-08-15 | 上海合晶硅材料有限公司 | 直拉硅单晶中低氧控制方法 |
CN101886289A (zh) * | 2009-05-13 | 2010-11-17 | 硅电子股份公司 | 从熔体中生长硅单晶的方法和装置 |
CN102220633A (zh) * | 2011-07-15 | 2011-10-19 | 西安华晶电子技术股份有限公司 | 一种半导体级单晶硅生产工艺 |
CN105040099A (zh) * | 2014-04-21 | 2015-11-11 | 环球晶圆日本股份有限公司 | 单晶提取方法 |
CN106498494A (zh) * | 2016-11-02 | 2017-03-15 | 中国电子科技集团公司第四十六研究所 | 一种mems器件制作用硅单晶材料的热场和制备方法 |
CN111910248A (zh) * | 2020-07-14 | 2020-11-10 | 江苏协鑫硅材料科技发展有限公司 | 铸锭单晶籽晶、铸造单晶硅锭及其制备方法、铸造单晶硅片及其制备方法 |
-
2003
- 2003-10-15 CN CN 200310108003 patent/CN1233883C/zh not_active Expired - Fee Related
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1332072C (zh) * | 2005-01-20 | 2007-08-15 | 上海合晶硅材料有限公司 | 直拉硅单晶中低氧控制方法 |
CN101886289A (zh) * | 2009-05-13 | 2010-11-17 | 硅电子股份公司 | 从熔体中生长硅单晶的方法和装置 |
CN101886289B (zh) * | 2009-05-13 | 2013-09-25 | 硅电子股份公司 | 从熔体中生长硅单晶的方法和装置 |
CN102220633A (zh) * | 2011-07-15 | 2011-10-19 | 西安华晶电子技术股份有限公司 | 一种半导体级单晶硅生产工艺 |
CN102220633B (zh) * | 2011-07-15 | 2012-11-07 | 西安华晶电子技术股份有限公司 | 一种半导体级单晶硅生产工艺 |
CN105040099A (zh) * | 2014-04-21 | 2015-11-11 | 环球晶圆日本股份有限公司 | 单晶提取方法 |
CN105040099B (zh) * | 2014-04-21 | 2017-12-12 | 环球晶圆日本股份有限公司 | 单晶提取方法 |
CN106498494A (zh) * | 2016-11-02 | 2017-03-15 | 中国电子科技集团公司第四十六研究所 | 一种mems器件制作用硅单晶材料的热场和制备方法 |
CN111910248A (zh) * | 2020-07-14 | 2020-11-10 | 江苏协鑫硅材料科技发展有限公司 | 铸锭单晶籽晶、铸造单晶硅锭及其制备方法、铸造单晶硅片及其制备方法 |
CN111910248B (zh) * | 2020-07-14 | 2022-02-18 | 江苏协鑫硅材料科技发展有限公司 | 铸锭单晶籽晶、铸造单晶硅锭及其制备方法、铸造单晶硅片及其制备方法 |
Also Published As
Publication number | Publication date |
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CN1233883C (zh) | 2005-12-28 |
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EE01 | Entry into force of recordation of patent licensing contract |
Assignee: NINGBO SOLAR ELECTRIC POWER Co.,Ltd. Assignor: Zhejiang University Contract fulfillment period: 2008.7.14 to 2013.7.13 Contract record no.: 2008330000128 Denomination of invention: Method for growing low-imperfection-density direct-drawing silicon monocrystal in magnetic field Granted publication date: 20051228 License type: Exclusive license Record date: 20080730 |
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Free format text: EXCLUSIVE LICENCE; TIME LIMIT OF IMPLEMENTING CONTACT: 2008.7.14 TO 2013.7.13 Name of requester: NINGBO SOLAR ELECTRIC POWER CO., LTD. Effective date: 20080730 |
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