CN1491527A - Apparatus for generating low temperature plasma at atmospheric pressure - Google Patents

Apparatus for generating low temperature plasma at atmospheric pressure Download PDF

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Publication number
CN1491527A
CN1491527A CNA028048792A CN02804879A CN1491527A CN 1491527 A CN1491527 A CN 1491527A CN A028048792 A CNA028048792 A CN A028048792A CN 02804879 A CN02804879 A CN 02804879A CN 1491527 A CN1491527 A CN 1491527A
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electrode
plasma
dielectric
discharge
power supply
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CN1228999C (en
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南基锡
李相老
李九铉
罗钟周
金钟国
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SE PLASMA CO Ltd
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SE PLASMA CO Ltd
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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/48—Generating plasma using an arc
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32018—Glow discharge
    • H01J37/32036—AC powered
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32018—Glow discharge
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/2406—Generating plasma using dielectric barrier discharges, i.e. with a dielectric interposed between the electrodes
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H2245/00—Applications of plasma devices
    • H05H2245/10—Treatment of gases
    • H05H2245/17—Exhaust gases
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H2245/00—Applications of plasma devices
    • H05H2245/30—Medical applications
    • H05H2245/36—Sterilisation of objects, liquids, volumes or surfaces

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Power Engineering (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

Disclosed is an apparatus for generating low-temperature plasma at atmospheric pressure, comprising: a couple of electrodes facing each other at a distance, one of them being connected to a power supply, the other being grounded; a couple of dielectrics with a thickness of 25 mum to 10 mm, positioned on the facing surfaces of the electrodes in such away as to face each other, one of them having at least one discharge gap therein; and a conductor electrode having at least one tip positioned within the discharge gap, wherein an electric field is applied at an intensity of 1-100 KV/cm through the power supply across the electrodes by use of a pulse direct current or an alternating current in a frequency bandwidth of 50 Hz to 10 GHz while a reaction gas is fed between the electrodes, so as to induce a hollow cathode discharge, a capillary discharge or the high accumulation of charges from the discharge gap. The inventive apparatus prevents the conversion of the plasma to arcs and thus gives stable, low-temperature plasma in a high density.

Description

Be used under atmospheric pressure producing the device of low temperature plasma
Technical field
The present invention relates to a kind of device that is used under atmospheric pressure producing the high density low temperature plasma by lower discharge beginning and sustaining voltage.
Background technology
Usually, plasma is defined as the gas of partial ionization, and it is made up of the positive and negative free charge of equivalent almost, so it is an electric neutrality.Temperature when carrying out ionization, plasma are divided into high-temperature plasma and low temperature plasma group, and plasma chemically and is physically having very high reactivity.
Low temperature plasma is used for synthetic various materials, for example metal, semiconductor, polymer, nylon, plastics, paper, fiber and ozone, perhaps change the surface characteristic of material, improve various physics and chemical characteristic simultaneously, for example bonding strength, dyeing property, impressionability etc.Therefore, low temperature plasma has multiple use in the synthetic and cleaning applications of semiconductor, metal, ceramic membrane.
Usually, low temperature plasma can produce in the low-voltage vacuum container.In order to keep this vacuum, need very expensive device.In addition, when scantling to be processed is big, will be difficult to apply plasma to them.Another problem of plasma treatment is to be difficult to carry out automatically plasma treatment.And plasma is difficult to handle the material that has very high steam pressure or outgas, for example rubber, biomaterial etc.
For fear of these problems, developed various technology, for example corona discharge, dielectric shielding discharge and glow discharge, therefore, low temperature plasma can under atmospheric pressure produce.At present, except aforementioned field, these technology also are widely used in a plurality of fields, comprise chemical agent for example synthetic, sterilization, detoxifcation and the synthetic material that is difficult to use in a vacuum plasma treatment of ozone.
Corona discharge be show as when voltage gradient surpasses critical value on the conductive surface or near the discharge of generation bluish violet aura.Usually, by between by electric conducting material two wedge angle electrodes that for example metal forms, applying high voltage, produce the plasma band by electrode.When having when applying voltage between very short-range two electrodes, produce electric arc, have the very linear plasma of minor diameter thereby form.At this moment, be transformed into arc discharge in order to prevent plasma, voltage intermittently applies, and perhaps provides resistance to electrode.
Dielectric shielding discharge utilizes the electric charge accumulation that is produced by dielectric polarization, so that form reverse potential, discharge at this moment stops, and just, it utilizes pulsed discharge, thereby prevents arc discharge.
When corona discharge, plasma forms the band shape, and it is also inhomogeneous, and density is lower.In addition, because two gaps between electrodes are narrower, corona discharge is difficult to use in the object of 3D shape.Also have, the other problem of corona discharge comprise produce noise and electrode life shorter.
Although uniform plasma can be provided, the dielectric shielding is discharged and can not be guaranteed to produce plasma even, that disperse in big zone, and is identical with corona discharge.When providing attachment device when preventing arc discharge, the plasma density of dielectric shielding discharge reduces, and two distance between electrodes are narrower, so that limited the size and dimension of object to be processed.
When use has that higher discharge begins and the gas that keeps electromotive force for example when argon gas, oxygen and nitrogen, corona discharge and dielectric shielding discharge technology all need the power supply of high voltage.But, this power supply is difficult to operation and control, because it is very expensive, and the power consumption height.
Summary of the invention
Therefore, the objective of the invention is to overcome the problems referred to above that run in the prior art, and be provided under atmospheric pressure producing the device of low temperature plasma, this device has novel electrode structure, is transformed into arc discharge so that prevent plasma.
Another object of the present invention provides a kind of plasma generating device, and the discharge voltage of this device is very low, so that reduce work and equipment cost greatly and the power consumption of the power supply equipped.
An also purpose of the present invention provides a kind of plasma generating device, and this device can utilize very wide band alternating current and pulse direct current.
An also purpose of the present invention provides a kind of plasma generating device, and this device can for example discharge in nitrogen, oxygen and the air at the gas of height discharge beginning electromotive force.
An also purpose of the present invention provides a kind of plasma generating device, and this device can produce even, highdensity low temperature plasma in very big zone under than low discharge voltage.
Above-mentioned purpose can realize by a kind of device that is used under atmospheric pressure producing low temperature plasma is provided according to the present invention, this device comprises: pair of electrodes respect to one another, this is to opening certain distance between electrode, in them one links to each other another ground connection with power supply; A pair of thickness is the dielectric of 25 μ m-10mm, and this is arranged on the apparent surface of electrode dielectric, so that toward each other, at least one discharging gap is arranged in one in them; And conductor electrode, this conductor electrode has at least one tip, this at least one tip is arranged in the discharging gap, wherein, by adopting frequency band is pulse direct current or the alternating current of 50Hz-10GHz, supply response gas between electrode simultaneously, thus the electric field strength of 1-100KV/cm between electrode, applied by power supply.
The plasma that is produced by apparatus of the present invention is suitable for forming the high energy free radical, this high energy free radical is widely used in various fields, comprise the etching of carrying out bonding, polishing, cleaning, thin film deposition, sterilization, sterilization, ozone preparation, printing, dyeing and various materials, these materials comprise metal, rubber, fiber, synthetic resin and semiconductor.Also have, the application of plasma comprises the purification (SO for example of purification, air and the automobile exhaust of running water and waste water xAnd NO x), fuel completing combustion, make high brightness lamp etc.
Description of drawings
By following detailed description also in conjunction with the accompanying drawings, can more clearly understand above and other objects of the present invention, feature and other advantage, in the accompanying drawing:
Fig. 1 is the cutaway view of the electrode of display plate structure, and this electrode is applicable to device first embodiment of the invention, that be used under atmospheric pressure producing low temperature plasma;
Fig. 2 is the cutaway view of the electrode of expression tubular construction, and this electrode is applicable to device second embodiment of the invention, that be used under atmospheric pressure producing low temperature plasma; And
Fig. 3 provides the view at the tip of conductor electrode.
Embodiment
By accompanying drawing, can understand the application of the preferred embodiment of the present invention better, in the accompanying drawing, identical reference number is respectively applied for identical and corresponding parts.
First embodiment
With reference to figure 1, represented the cutaway view of electrode structure among the figure, this electrode structure is applicable to device first embodiment of the invention, that be used under atmospheric pressure producing low temperature plasma.In this embodiment, the present invention utilizes the electrode of plate structure under atmospheric pressure to produce low temperature plasma.
As shown in Figure 1, according to the present invention, device has pair of electrodes 1 and 2, and this is arranged to toward each other electrode 1 and 2.In these two electrodes one links to each other with power supply 6, and another electrode grounding.When power supply 6 provided direct current, grounding electrode was an anode 2, and the electrode that links to each other with power supply 6 is set to negative electrode 1.Preferably, two electrodes all are made of metal, for example stainless steel, aluminium or copper.
Dielectric 3 and 4 is installed in electrode 1 and 2 respectively, and is arranged to toward each other.For the ease of producing plasma, preferably each dielectric 3 and 4 thickness are from 25 μ m to 10mm.In the dielectric 3 on being installed in the electrode 1 that links to each other with power supply, provide discharging gap 7, this discharging gap is along passing this dielectric 3 perpendicular to the direction of dielectric surface.On the other hand, be installed in grounding electrode 2 lip-deep dielectrics 4 and do not have discharging gap.Just, the dielectric with vertical perforated discharge gap is installed on the electrode 1 that links to each other with power supply 6, and another does not have the dielectric of discharging gap to be installed on the grounding electrode 2, and then, these two dielectrics are arranged to toward each other.
Have certain width (a) and certain altitude (b) and be arranged in each discharging gap 7 from the conductor electrode 5 that electrode 1 stretches out.Conductor electrode 5 has most advanced and sophisticated 8,8 ' or 8 ", can there be shape shown in Fig. 3 A, 3B or the 3C at these tips.By utilizing the electric field of power supply 6, conductor electrode 5 is most advanced and sophisticated 8,8 ' or 8 " locate stored charge, these tips help the discharge of stored charge.In addition, most advanced and sophisticated 8,8 ' or 8 " control the width (a) of each discharging gap 7 and the function of (b) highly in addition.
Shown in Fig. 3 A, 3B and 3C, the shape that is formed at the tip on the conductor electrode 5 can be pointed shape, rectangle or shaped form.Other different shape also can be used for these tips.
Preferably, most advanced and sophisticated height (b) be they width (a) 0.1-20 doubly, simultaneously, these most advanced and sophisticated density are that every 10mm has 1-100 individual.
To the restriction of the size at tip and quantity is because when this size and quantity go beyond the scope, electric charge is too low in the efficient of tip accumulation, so that can not reduce discharge beginning and sustaining voltage, and can not obtain high-density plasma and can not produce uniform plasma.
Although have the device of plate structure electrode be expressed as with electrode 1 that power supply 6 links to each other on dielectric 3 is arranged and dielectric 4 is arranged on grounding electrode, should be known in that the present invention is not limited thereto, but various structures can be arranged.For example, the electrode 1 and 2 that is furnished with dielectric 3 and 4 above can change the position, and just, the dielectric 3 with discharging gap 7 is installed on the grounding electrode 2, and does not have the dielectric 4 of discharging gap 7 to be installed on the electrode 1 that links to each other with power supply 6.In addition, when the dielectric with discharging gap 7 is installed in electrode 1 and 2 one when going up, remaining one can not have dielectric.
Dielectric thickness range is from 25 μ m to 10mm, and this dielectric needs can be high temperature resistant, and fabulous dielectric property is arranged.Preferably, dielectric is made by material selected from following group: glass, aluminium oxide, boron nitride, carborundum, silicon nitride, quartz and magnesium oxide.
When not providing discharging gap 7 on the dielectric 3, producing plasma needs very high voltage.And the density of the plasma that produces is lower.On the contrary, when dielectric 3 provided the conductor electrode 5 with discharging gap 7 and most advanced and sophisticated 8, therefore the electric field that is applied on electrode 1,2 and 5 was also strengthened in the accumulation of place, tip, thereby causes hollow cathode discharge and capillary discharging in discharging gap 7.Therefore, producing the required voltage of plasma can reduce, and the plasma density that produces is higher, and very stable.
Preferably, width (a) scope of vertically passing dielectric discharging gap 7 is from 5 μ m to 2mm, and highly (a) scope is than the long 5-250 folding of width (b) (fold).When width with when highly exceeding this limited field, can not produce capillary discharging and hollow cathode discharge, like this, can not and keep potential drop be low to moderate desired value with the discharge beginning.In addition, can't stably produce high-density plasma, and can not prevent that plasma is transformed into electric arc.
Second embodiment
With reference to figure 2, represented the cutaway view of electrode structure among the figure, this electrode structure is applicable to according to another embodiment of the present invention, is used under atmospheric pressure producing the device of low temperature plasma.In the present embodiment, the present invention is used for the electrode of tubular construction can under atmospheric pressure to produce the device of low temperature plasma.
As shown in Figure 2, provide tube electrode 1 ', dielectric 3 ' was installed on the interior week of this tube electrode 1.Be arranged in from the dielectric 3 ' a distance that is installed on the tube electrode 1 ' inner surface with the central axis of the concentric cylindricality core electrode 2 ' of this tube electrode 1 ' along this tube electrode 1 '.The two ends of each electrode are fixed, and carry out the suitable insulation (not shown) simultaneously, and anode dielectric 4 ' is fixed on the periphery of core electrode 2 ', and a plurality of discharging gaps 7 ' are arranged in the anode dielectric 4 ' equally spacedly simultaneously.
Each electrode 3 ' and 4 ' thickness can be in the scopes described in first embodiment.Also have, the width of discharging gap 7 (a) and highly (b) also have with first embodiment in identical restriction.Be furnished with conductor electrode 5 on the periphery of core electrode 2, width of this conductor electrode 5 (a) and height (b) also match with discharging gap 7.It is most advanced and sophisticated that conductor electrode 5 also provides, and this most advanced and sophisticated shape as shown in Figure 3.
When tube electrode 1 ' ground connection, core electrode 2 ' links to each other with power supply 6.
But, in tubular construction, electrode 1 ' and 2 ' and arrangement, shape and the structure of dielectric 3 ' and 4 ' aspect can carry out various variations.
In order to produce plasma, wide by service band is pulse direct current or the alternating current of 50Hz-10GHz, and the intensity of the electric field that is applied by the device of power supply 6 in first and second embodiment is 1-100kV/cm.When having such electric field, between the tip of discharging gap and comparative electrode, produce discharge, thereby produce plasma.
The device of the application of the invention can be stably at the big uniform plasma of region generating.
The plasma that is produced by device of the present invention is used for various materials, for example plastics, nylon, epoxy resin etc. of metal, rubber, fiber, paper and synthetic resin for example, and be used for surface characteristic with material and change over and be suitable for carrying out bonding, polishing, thin film deposition, dyeing, printing etc.
Also have, plasma can be directly used in the noxious substance of removing in the contaminated air and this contaminated air is purified.In addition, plasma can be used for making ozone, and ozone can be used for the purification of the sterilization of running water and sterilization, waste water, the purification of automobile exhaust (SO for example xAnd NO x) and make fuel completing combustion in the automobile engine.Also have, plasma can be used to make very bright lamp, and this lamp can be used for photochemical reaction, and this photochemical reaction can be used for various surface treatments, comprises the manufacturing of semiconductor device.For example, reacting gas such as air, steam, oxygen, nitrogen, hydrogen, argon gas, helium, methane, ammonia, carbon tetrafluoride, aectylene, propane etc. supply to alone or in combination and are equipped with between dielectric electrode, apply high electric field by power supply then, so that produce plasma.
That this plasma can be used for carrying out is bonding, the purification of polishing, cleaning, thin film deposition, sterilization, sterilization, ozone preparation, dyeing, printing, etching, water purification, air and automobile exhaust, make fuel completing combustion in the automobile engine, make high brightness lamp etc.
Embodiment
This embodiment has adopted the plasma manufacturing installation identical with second embodiment, and this device has plate structure, and wherein, two battery lead plates 1 and 2 are arranged to toward each other, and provide dielectric on each apparent surface of battery lead plate 1 and 2.Be formed with a plurality of discharging gaps 7 in a dielectric 3 and 4, the wide of each discharging gap 7 is 200 μ m, and height is 2mm.For conductor electrode 5, provide the tip 8 of shape as shown in Fig. 3 a, the width at each tip 8 (a) is 2mm, highly (b) is 1.5mm.Be to introduce helium between two electrodes 1 and 5 of 7mm in apart distance, simultaneously, between electrode, add the DC bipolar pulse power of 50KHz, so that discharge under atmospheric pressure.
As a result, approximately 1KV voltage is used to cause discharge, and sustaining voltage is about 0.7KV.At this moment, under the situation that does not produce electric arc, stably produce high-density plasma.
Under atmospheric pressure, the discharge ionization voltage of helium is measured as about 3.7KV/cm.When distance between electrodes is 7mm, need the discharge of about 2.6KV to begin electromotive force.
As previously mentioned, the apparatus of the present invention that are used to produce low temperature plasma have following advantage:
At first, be used to cause hollow cathode discharge, capillary discharging or highly accumulate device electric field, that under atmospheric pressure produce plasma to prevent that plasma is transformed into electric arc, thereby produce stable, highdensity low temperature plasma.
Secondly, this device can cause and keep discharge under low-down voltage, and can adopt very broadband, also has than low power consumption in addition, and can make at lower cost.
At last, this device can be at the highdensity homogeneous plasma of very big region generating.This plasma is suitable for forming the high energy free radical, this high energy free radical is widely used in various fields, comprise purification, air and the automobile exhaust of carrying out bonding, polishing, cleaning, thin film deposition, sterilization, sterilization, ozone preparation, printing, dyeing, etching, running water and waste water purification, fuel completing combustion, make high brightness lamp etc.At this moment, plasma can produce good result, and reduces the processing time greatly.
The present invention is illustrated by by way of example, but should be known in that used term is in order to illustrate, rather than in order to limit.According to the above description, the present invention can carry out multiple variation and change.Therefore, should be known in the scope of accessory claim that the present invention can implement in the mode that is different from certain illustrated.

Claims (4)

1. device that is used under atmospheric pressure producing low temperature plasma comprises: pair of electrodes respect to one another, and this is to opening certain distance between electrode, and in them one links to each other another ground connection with power supply; A pair of dielectric, this is 25 μ m-10mm to dielectric thickness, is arranged on the apparent surface of electrode, so that toward each other, at least one discharging gap is arranged in one in them; And conductor electrode, this conductor electrode has at least one tip, this at least one tip is arranged in the discharging gap, wherein, by adopting frequency band is pulse direct current or the alternating current of 50Hz-10GHz, supply response gas between electrode simultaneously, thus the electric field strength of 1-100KV/cm between electrode, applied by power supply.
2. device according to claim 1, wherein: the width of discharging gap is 5 μ m to 2mm, highly is 5-250 times of width.
3. device according to claim 1, wherein: electrode is made of metal, most advanced and sophisticated height be it width 0.1-20 doubly, and most advanced and sophisticated density is that every 10mm electrode length has 1-100 tip.
4. device according to claim 1 and 2, wherein: dielectric is made by insulating material selected from following group: glass, aluminium oxide, boron nitride, carborundum, silicon nitride, quartz and magnesium oxide.
CNB028048792A 2001-02-12 2002-02-08 Apparatus for generating low temperature plasma at atmospheric pressure Expired - Fee Related CN1228999C (en)

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