CN1464533A - Wet-type washing apparatus - Google Patents
Wet-type washing apparatus Download PDFInfo
- Publication number
- CN1464533A CN1464533A CN 02124439 CN02124439A CN1464533A CN 1464533 A CN1464533 A CN 1464533A CN 02124439 CN02124439 CN 02124439 CN 02124439 A CN02124439 A CN 02124439A CN 1464533 A CN1464533 A CN 1464533A
- Authority
- CN
- China
- Prior art keywords
- groove
- ablution
- chemical
- wet
- washing apparatus
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Abstract
The present invention relates to a wet type decontaminating apparatus suitable for chemical cleaning of a plural of glittering circle, at least including: a plural of first chemistry cleaning troughs used for proceeding first cleaning procedure to the homo- glittering circle; a plural of second chemistry cleaning troughs used for proceeding second cleaning procedure to the homo- glittering circle; a connect trough, as a cross connecting district of the homo-glittering circle between the first and second chemical cleaning troughs, having a first metering equipment measuring the homo- glittering circle after the first cleaning procedure. The present invention can take the measurements without having to proceed the second cleaning procedure of glittering circle, so that operation time can be reduced and further production capacity is increased.
Description
Technical field
The present invention relates to semi-conductive manufacturing, particularly a kind of Wet-type washing apparatus can reduce wafer in activity duration of Wet-type washing apparatus (wet bench) and promote production capacity (throughput).
Background technology
In the wet process (wet processing) that semiconductor is made, comprise wet chemistry and clean (wetchemical cleaning) and Wet-type etching (wet etching).Wherein wet chemistry is cleaned important especially.The purpose of cleaning is to remove metal impurities, organic substance and particulate (particle) to increase the yield and the reliability of element.
The present employed equipment of wet chemistry cleaning technology is for embathing chemical washing/cleaning equipment of formula (immersion) or title washing drying groove (wet bench).This equipment comprises a plurality of chemical tanks, a plurality of rinse bath, mechanical arm (robot) and drying device (dryer) etc.In chemical tank, the normal chemical liquids of using has sulfuric acid and hydrogen peroxide mixed liquor (sulfuric-peroxide mixture, SPM), buffer oxide silicon etching liquid (buffer oxide etcher, BOE), the mixed liquor of ammoniacal liquor and hydrogen peroxide (ammonium-peroxide mixture, APM) and the mixed liquor of hydrochloric acid and hydrogen peroxide (hydrochloric-peroxide mixture, HPM).In addition, rinse bath is generally and gets express developed that (quick dump rinse, QDR) groove, heat get that (hot QDR, HQDR) (overflow, OF) groove and last (final rinse, FR) groove cleaned are cleaned in groove, overflow express developed.
Fig. 1 shows known Wet-type washing apparatus block schematic diagram.RT1, RT2 are expressed as mechanical arm (not illustrating), in order to clean district 1 at first chemistry, get/join (QDR/Transferring) groove 20 express developed, second chemistry cleans district 21, and cleans at last/measure transmission plural wafer (not illustrating) between (FR/Measuring) groove 26 and the dry slot 28.Wherein, first chemistry is cleaned has the plural number first chemical ablution groove in the district 1, for example get (HQDR) groove 12, a buffer silicon oxide etching express developed by a sulfuric acid cleaned (SPM) groove 10, a heat and clean that (BOE) groove 14, an overflow are cleaned (OF) groove 16, ammonia alkali flushed channel (APM) groove 18 is constituted.Second chemistry is cleaned has the plural number second chemical ablution groove in the district 21, for example cleaned (HPM) groove 22 and got express developed (QDR) groove 24 by a hydrochloric acid to be constituted.In addition, clean/measure (FR/measuring) groove 26 at last and be provided with the resistance value of a water resistance meter (not illustrating), and dry slot 28 is in order to dehydrate wafer with the measurement wafer.
Fig. 2 shows known Wet-type washing apparatus and cleaning method flow chart thereof.At first, carry out first step S20, RT1 is written into wafer by mechanical arm.Then, carry out the second step S22, by mechanical arm RT1 wafer is inserted first ablution groove 1 and carry out first ablution program.Then, carry out third step S24, whether decision need carry out second ablution program, if need carry out second ablution program, carry out the 4th step S26, wafer was gone out and inserted the second chemical ablution groove to carry out second ablution program by the handing-over groove in 20 years by mechanical arm RT2.Then, carry out the 5th step S28, wafer is carried out and inserts measuring flume 26 in order to resistance value with water resistance instrumentation amount wafer by mechanical arm RT2.If need not carry out second ablution program, then do not carry out the 4th step S26, and carry out above-mentioned the 5th step S28.At last, carry out the 6th step S30, wafer is carried out and inserts dry slot 28 so that wafer is dehydrated by mechanical arm RT2.Yet because some ablution program (recipe) need not carry out second ablution program, wafer but still needs to treat that mechanical arm RT2 handing-over puts measuring flume 26 to measure in that handing-over groove 20 is medium.Thus, not only waste the activity duration and limit mechanical arm RT1 carries out other operations and reduces production capacity.
Summary of the invention
In view of this, for overcoming the defective of above-mentioned prior art, special a kind of Wet-type washing apparatus of the present invention and the cleaning method thereof of proposing.
The object of the present invention is to provide a kind of Wet-type washing apparatus, it carries out the measurement of wafer by the handing-over groove with a measurement mechanism is provided, to increase the elasticity language function of conveyer.
Another object of the present invention is to provide a kind of cleaning method of Wet-type washing apparatus,, directly measure in the groove, improve production capacity in activity duration of Wet-type washing apparatus to reduce wafer in handing-over by will only carrying out the wafer of first ablution program.
According to above-mentioned purpose, the invention provides a kind of Wet-type washing apparatus, be applicable to that the chemistry of plural wafer is cleaned, it comprises at least: in order to these wafers are carried out the plural number first chemical ablution groove of first ablution program; In order to these wafers are carried out the plural number second chemical ablution groove of second ablution program; One handing-over groove, at the cross-connecting area between these first and second chemical ablution groove, it has first measurement mechanism of measuring these wafers after finishing this first ablution program as these wafers; One measuring flume has second measurement mechanism of measuring these wafers after finishing this second ablution program; One in order to be written into, to carry and transmit first conveyer of these wafers between these first chemical ablution grooves and this handing-over groove; And one in order to be written into, to carry and to transmit second conveyer of these wafers between this handing-over groove, these second chemical ablution grooves and this measuring flume.
To sum up, the present invention is used as measuring flume by a handing-over groove is provided, and measures for the wafer that need not carry out second ablution program.So can reduce wafer in the activity duration of Wet-type washing apparatus and the elasticity language function and then the raising production capacity of increase conveyer.
Description of drawings
Fig. 1 shows known Wet-type washing apparatus block schematic diagram;
Fig. 2 shows known Wet-type washing apparatus and cleaning method flow chart thereof;
Fig. 3 shows the Wet-type washing apparatus block schematic diagram according to the embodiment of the invention;
Fig. 4 shows according to the Wet-type washing apparatus of the embodiment of the invention and cleaning method flow chart thereof.
Embodiment
The Wet-type washing apparatus and the cleaning method thereof that below cooperate the Fig. 3 and the 4 explanation embodiment of the invention.
At first, please refer to Fig. 3, it shows the Wet-type washing apparatus block schematic diagram according to the embodiment of the invention.This Wet-type washing apparatus includes: the plural number first chemical ablution groove, the plural number second chemical ablution groove, get express developed/join/measures (QDR/Transferring/Measuring) groove 40 (be designated hereinafter simply as handing-over groove), clean at last/measurement (FR/measuring) groove 46 (being designated hereinafter simply as measuring flume), one first conveyer RT1, one second conveyer RT2 and a dry slot 48.In the present embodiment, first chemistry is cleaned the plural number first chemical ablution groove in district 31 in order to wafer (not illustrating) is carried out first ablution program, constituted by at least one chemical tank and at least one rinse bath, for example by a sulfuric acid cleaned (SPM) groove 30 (that is, the mixed liquor of interior sulfur acid and hydrogen peroxide), one heat is got (HQDR) groove 32 express developed, one buffer silicon oxide etching cleaning (BOE) groove 34 (that is, include the buffer oxide silicon etching liquid), (OF) groove 36 is cleaned in one overflow, and ammonia alkali flushed channel (APM) groove 38 (that is, include the mixed liquor of ammoniacal liquor and hydrogen peroxide) constitutes.
Second chemistry is cleaned the plural number second chemical ablution groove 41 in district 41 in order to wafer is carried out second ablution program, constituted by at least one chemical tank and at least one rinse bath equally, for example clean (HPM) groove 42 (that is, the mixed liquor of interior hydrochloric and hydrogen peroxide) and get (QDR) groove 44 express developed and constitute by a hydrochloric acid.
Handing-over groove 40 is to clean the cross-connecting area of distinguishing between 31 and 41 as wafer at first and second chemistry.Be different from known Wet-type washing apparatus, this groove 40 has a measurement mechanism (not illustrating), water resistance meter for example, and with after finishing first ablution program, the resistance value of measuring wafer is used as the foundation of washability.In addition, measuring flume 46 is coupled to and gets (QDR) groove 44 express developed, has a measurement mechanism (not illustrating), water resistance meter for example, and with after finishing this second ablution program, the resistance value of measuring wafer is used as the foundation of washability.
The first conveyer RT1, mechanical arm (not illustrating) for example, in order between the first chemical ablution groove and handing-over groove 40, to be written into, to carry and to transmit wafer, and the second conveyer RT2, mechanical arm (not illustrating) for example is in order to be written into, to carry and to transmit wafer between handing-over groove 40, second chemical ablution groove and measuring flume 46.
Dry slot 48 for example is spin-dried for method (spindrying) or Marangon seasoning (Marangoni drying) in order to the wafer after measuring is implemented a dried.
Next, please refer to Fig. 4, it shows the cleaning method flow chart according to the Wet-type washing apparatus of the embodiment of the invention.At first, carry out first step S40, RT1 is written into wafer by mechanical arm.Then, carry out the second step S42, wafer is inserted first ablution groove to carry out first ablution program by mechanical arm RT1.Then, carry out third step S44, by mechanical arm RT1 wafer is carried out and be sent to handing-over groove 40 from the first chemical ablution groove and whether carry out second ablution program with decision.When need not to carry out second ablution program, carry out the 4th step S46, in handing-over groove 40, carry out the resistance measurement of wafer in water resistance.When need carry out second ablution program, carry out the 5th step S48, by mechanical arm RT2 wafer was gone out and is sent to the second chemical ablution groove to carry out second ablution program by the handing-over groove in 40 years.Then, carry out the 6th step S50, wafer is carried out and be sent to measuring flume 46 from the second chemical ablution groove, in order to resistance value with water resistance instrumentation amount wafer by mechanical arm RT2.At last, after wafer is finished measurement, carry out the 7th step S52, wafer is carried out and is sent to dry slot 48 to carry out dried, for example be spin-dried for method or Marangon seasoning by mechanical arm RT2.
Because Wet-type washing apparatus can carry out different ablution programs simultaneously usually and come cleaning wafer; and some processing procedure programs only need be carried out first ablution program; so compared to known cleaning method; when the present invention need not to carry out second ablution program at wafer; directly measure the resistance value of wafer in handing-over groove 40, wafer need not to utilize mechanical arm RT2 to be handover to measuring flume 48 and measures.Therefore, can reduce the activity duration of wafer at Wet-type washing apparatus.In addition, be longer than the handing-over time, so mechanical arm RT1 and RT2 can be when wafer be measured in handing-over groove 40, carried out other operations and increase the elasticity language function owing to measure the time of wafer.That is cleaning method of the present invention can promote the production capacity of Wet-type washing apparatus.
The above embodiment only is explanation technological thought of the present invention and characteristics, its purpose makes the personage who has the knack of this skill can understand content of the present invention and is implementing according to this, when not limiting claim of the present invention with it, promptly the equalization of doing according to disclosed spirit generally changes or modifies, and must be encompassed in the claim scope of the present invention.
Claims (10)
1. a Wet-type washing apparatus is applicable to that the chemistry of plural wafer is cleaned, and it is characterized in that: comprise at least:
In order to these wafers are carried out the plural number first chemical ablution groove of first ablution program;
In order to these wafers are carried out the plural number second chemical ablution groove of second ablution program;
One handing-over groove, at the cross-connecting area between these first and second chemical ablution groove, it has first measurement mechanism of measuring these wafers after finishing this first ablution program as these wafers;
One measuring flume has second measurement mechanism of measuring these wafers after finishing this second ablution program;
One in order to be written into, to carry and transmit first conveyer of these wafers between these first chemical ablution grooves and this handing-over groove; And
One in order to be written into, to carry and transmit second conveyer of these wafers between this handing-over groove, these second chemical ablution grooves and this measuring flume.
2. Wet-type washing apparatus as claimed in claim 1 is characterized in that: also comprise one in order to these wafers after measured are implemented the dry slot of a dried.
3. Wet-type washing apparatus as claimed in claim 1 is characterized in that: these first chemical ablution grooves are made of at least one first chemical tank and at least one first rinse bath.
4. Wet-type washing apparatus as claimed in claim 3 is characterized in that: the chemical liquids in this first chemical tank is mixed liquor, a buffer oxide silicon etching liquid, and wherein any of the mixed liquor of ammoniacal liquor and hydrogen peroxide of sulfuric acid and hydrogen peroxide.
5. Wet-type washing apparatus as claimed in claim 3 is characterized in that: this first rinse bath is that a heat is got groove, an overflow ablution groove and express developed and got wherein any of groove express developed.
6. Wet-type washing apparatus as claimed in claim 1 is characterized in that: these second chemical ablution grooves are made of at least one second chemical tank and at least one second chemical ablution groove.
7. Wet-type washing apparatus as claimed in claim 6 is characterized in that: the chemical liquids in this second chemical tank is the mixed liquor of hydrochloric acid and hydrogen peroxide.
8. Wet-type washing apparatus as claimed in claim 6 is characterized in that: this second chemical ablution groove is to get groove express developed.
9. Wet-type washing apparatus as claimed in claim 1 is characterized in that: this first and second measurement mechanism is for measuring the water resistance meter of these wafer resistance values.
10. Wet-type washing apparatus as claimed in claim 1 is characterized in that: this handing-over groove is to get groove express developed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 02124439 CN1464533A (en) | 2002-06-26 | 2002-06-26 | Wet-type washing apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 02124439 CN1464533A (en) | 2002-06-26 | 2002-06-26 | Wet-type washing apparatus |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1464533A true CN1464533A (en) | 2003-12-31 |
Family
ID=29743828
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 02124439 Pending CN1464533A (en) | 2002-06-26 | 2002-06-26 | Wet-type washing apparatus |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1464533A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101628288B (en) * | 2008-07-17 | 2012-03-21 | 富葵精密组件(深圳)有限公司 | Cleaning device and cleaning system |
| CN103400790A (en) * | 2013-08-14 | 2013-11-20 | 上海华力微电子有限公司 | Transmission device in wet chemical cleaning equipment |
| CN108701603A (en) * | 2016-03-18 | 2018-10-23 | 信越半导体株式会社 | The method of cleaning of semiconductor crystal wafer |
-
2002
- 2002-06-26 CN CN 02124439 patent/CN1464533A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101628288B (en) * | 2008-07-17 | 2012-03-21 | 富葵精密组件(深圳)有限公司 | Cleaning device and cleaning system |
| CN103400790A (en) * | 2013-08-14 | 2013-11-20 | 上海华力微电子有限公司 | Transmission device in wet chemical cleaning equipment |
| CN103400790B (en) * | 2013-08-14 | 2016-05-11 | 上海华力微电子有限公司 | Conveyer in wet-chemical cleaning equipment |
| CN108701603A (en) * | 2016-03-18 | 2018-10-23 | 信越半导体株式会社 | The method of cleaning of semiconductor crystal wafer |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US11342204B2 (en) | Method and apparatus for cleaning semiconductor wafers | |
| CN103480598B (en) | Silicon wafer cleaning method for preparing high-efficiency solar cell and cleaning equipment | |
| US20020166572A1 (en) | Method for cleaning a semiconductor wafer | |
| JP2006310767A (en) | Substrate processing unit | |
| CN111211042B (en) | Cleaning process for improving surface cleanliness of side-polished large-diameter silicon wafer | |
| CN200988041Y (en) | Furnace tube cleaner | |
| CN101561641A (en) | Plasma etching residual washing liquid | |
| CN1464533A (en) | Wet-type washing apparatus | |
| US20010003299A1 (en) | Liquid processing apparatus and liquid processing method | |
| CN101666984A (en) | Plasma etching residue cleaning solution | |
| US20220362815A1 (en) | Wafer wet cleaning system | |
| CN106694443B (en) | The dispatching method and scheduling system of Wafer Cleaning | |
| US20030201001A1 (en) | Wet cleaning device | |
| CN102122615B (en) | Method for pretreating solution for wet etching | |
| CN1198323C (en) | Method for washing semiconductor wafer | |
| TWI664661B (en) | Water channel device of pre- cleaning machine, pre-cleaning machine and pre-cleaning method | |
| JPH01140728A (en) | Cleaning and drying of object | |
| KR100947482B1 (en) | Valve with sensor for process solution, Apparatus for treating substrate using the same and Method thereof | |
| US5824119A (en) | Process for immersing a substrate in a plurality of processing baths | |
| KR0175280B1 (en) | Cleaner for Submersible Semiconductor Wafer | |
| JPH10163158A (en) | Cleaning apparatus for sheetlike body | |
| WO2024051134A1 (en) | Cleaning method for improving epitaxial stacking fault | |
| KR100909337B1 (en) | Wet cleaning method and wet cleaning device controller | |
| KR100630286B1 (en) | Wet cleaning apparatus | |
| JPH09190994A (en) | Deionizing water/ozone cleanig after hydrofluoric acid treatment for prevention of creation of residue of silicic acid |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |