CN101561641A - Plasma etching residual washing liquid - Google Patents

Plasma etching residual washing liquid Download PDF

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Publication number
CN101561641A
CN101561641A CN200810035979.0A CN200810035979A CN101561641A CN 101561641 A CN101561641 A CN 101561641A CN 200810035979 A CN200810035979 A CN 200810035979A CN 101561641 A CN101561641 A CN 101561641A
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Prior art keywords
plasma etching
washing liquid
etching residual
residual washing
carboxylic
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CN200810035979.0A
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Chinese (zh)
Inventor
刘兵
彭洪修
于昊
彭杏
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Anji Microelectronics Shanghai Co Ltd
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Anji Microelectronics Shanghai Co Ltd
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Priority to CN200810035979.0A priority Critical patent/CN101561641A/en
Priority to CN200980111450.5A priority patent/CN101981510B/en
Priority to PCT/CN2009/000380 priority patent/WO2009127119A1/en
Publication of CN101561641A publication Critical patent/CN101561641A/en
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    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/37—Polymers
    • C11D3/3746—Macromolecular compounds obtained by reactions only involving carbon-to-carbon unsaturated bonds
    • C11D3/3757—(Co)polymerised carboxylic acids, -anhydrides, -esters in solid and liquid compositions
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/26—Organic compounds containing oxygen
    • C11D7/265—Carboxylic acids or salts thereof
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3209—Amines or imines with one to four nitrogen atoms; Quaternized amines
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/34—Organic compounds containing sulfur
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/50—Solvents
    • C11D7/5004—Organic solvents
    • C11D7/5009—Organic solvents containing phosphorus, sulfur or silicon, e.g. dimethylsulfoxide
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/50—Solvents
    • C11D7/5004—Organic solvents
    • C11D7/5013—Organic solvents containing nitrogen
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/50—Solvents
    • C11D7/5004—Organic solvents
    • C11D7/5022—Organic solvents containing oxygen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
    • H01L21/02071—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a delineation, e.g. RIE, of conductive layers
    • C11D2111/22—
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen

Abstract

The invention discloses a plasma etching residual washing liquid which contains hydroxylamine and derivate thereof, solvent, water and chelating agent. The plasma etching residual washing liquid is characterized by also comprising carboxylic polymer and polymer containing paint affinity groups and is compounded by the carboxylic polymer and the polymer containing paint affinity groups, thereby radically solving the problem of metal corrosion, particularly aluminum corrosion caused by rinsing with water during the washing in a wet method washing of the traditional hydroxylamine washing liquid in a process of semiconductor manufacture and omitting the solvent rinsing for avoiding the metal corrosion after the washing by the transitional hydroxylamine washing liquid. The invention keeps stronger washing property of the prior hydroxylamine washing liquid, causes metal corrosion, particularly aluminum corrosion resulted from direct washing by water after the washing of wafer, can remove the solvent washing procedure after the removal of plasma etching residual, and is beneficial to reduce the pollution and lower the cost.

Description

A kind of plasma etching residual washing liquid
Technical field
The present invention relates to a kind of cleaning fluid in a kind of semiconductor fabrication process, be specifically related to a kind of cleaning fluid of plasma etching residues.
Background technology
In the semiconductor components and devices manufacture process, the coating of photoresist layer, exposure and imaging are necessary process steps to the pattern manufacturing of components and parts.Before last (promptly after coating, imaging, ion implantation and the etching at photoresist layer) of patterning carried out next processing step, the residue of photoresist layer material need thoroughly be removed.Can sclerosis photoresist layer polymkeric substance in doping step intermediate ion bombardment, thus therefore making photoresist layer become to be difficult for dissolving more is difficult to remove.So far the general two-step approach (dry ashing and wet etching) of using is removed this layer photoresistance tunic in semi-conductor industry.The first step utilizes dry ashing to remove the major part of photoresist layer (PR); Second step utilized composite corrosion inhibitor wet etching/cleaning to remove and wash remaining photoresist layer, and its step is generally cleaning fluid cleaning/rinsing/rinsed with deionized water.Requirement can only be removed residual polymkeric substance photoresist layer and inorganics in this process, and can not attack infringement metal level such as aluminium lamination.
In present wet clean process, cleaning fluid with the most use is the cleaning fluid that contains the azanol class, and this based cleaning liquid mainly is that EKC and the exploitation of ACT two companies are arranged at present, and occupies the market about 80%.Its typical patent has US6319885, US5672577, US6030932, US6825156 and US5419779 etc.Through updating, its solution itself significantly reduces the corrosion rate of metallic aluminium, but this based cleaning liquid owing to its in water during rinsing the corrosion rate of metallic aluminium bigger, after having cleaned the plasma etching thing, often adopt the solvent rinsing.Used solvent mainly contains isopropyl alcohol and N-Methyl pyrrolidone.The former progressively is eliminated in some semiconductor manufacturing companies because flash-point is lower, volatile; Though and latter's flash-point uses in good multiple semiconductor manufacturing company than higher, not volatile always; But along with environmental consciousness strengthens and cost pressure strengthens, more and more company wish can be with the direct rinsing of deionized water, and do not cause corrosion of metal.
Summary of the invention
Technical matters to be solved by this invention is in order to overcome in the wet clean step of semiconductor fabrication process, directly can cause metal (especially aluminium) corrosion after adopting traditional azanol based cleaning liquid with water rinse, the cost that needs to adopt the solvent rinse step and cause is higher, pollute bigger defective, and provide a kind of water rinse of can directly using, but can not cause metal erosion, and can guarantee the plasma etching residual washing liquid of cleaning performance preferably.
Plasma etching residual washing liquid of the present invention contains azanol and/or its derivant, solvent, water, sequestrant, and it also contains carboxylic polymkeric substance and the polymkeric substance that contains the pigment affinity groups.
Among the present invention, what the content of described carbonyl bearing polymer was preferable is mass percent 0.001～3%.
Among the present invention, described carboxylic polymkeric substance is selected from one or more in carboxylic homopolymer, carboxylic multipolymer, carboxylic homopolymer salt and the carboxylic copolymer salt.Wherein, described carboxylic homopolymer is preferable is in HPMA (HPMA), polyacrylic acid (PAA), the polymethylacrylic acid one or more, and better is HPMA and/or polyacrylic acid; Described carboxylic multipolymer is preferable is multipolymer (as: acrylic acid and maleic acid between the carboxylic monomer, methacrylic acid and maleic acid), or multipolymer (as: styrene and acrylic copolymer between vinyl-containing monomers and the carboxylic monomer, styrene and maleic acid, vinyl cyanide and maleic acid, ethene and acrylic copolymer, vinyl cyanide and acrylic copolymer, styrene and methacrylic acid copolymer, in ethene and methacrylic acid copolymer and vinyl cyanide and methacrylic acid copolymer or the like one or more), better is acrylic acid and maleic acid; Described salt is one or more in ammonium salt, sylvite and/or the sodium salt preferably, and better is ammonium salt, as ammonium polyacrylate.
Among the present invention, so long as existing carboxylic polymkeric substance all can be used in the plasma etching residual washing liquid of the present invention in the prior art, carboxylic polymer molecular weight size does not influence and realizes purpose of the present invention.If the polymkeric substance that has certain mass concentration in the plasma etching residual washing liquid of the present invention also correspondingly has certain density carboxyl in this plasma etching residual washing liquid.This is because for the polymkeric substance of certain mass concentration, if the molecular weight of polymkeric substance is big, the molal quantity of polymkeric substance is just correspondingly few in the plasma etching residual washing liquid; If the molecular weight of polymkeric substance is little, the molal quantity of polymkeric substance is also just correspondingly many in the plasma etching residual washing liquid, that is to say, forms certain polymkeric substance, also just correspondingly contains certain density carboxyl on the polymkeric substance of its certain mass concentration.No matter the molecular weight size of this polymkeric substance is as long as the carboxyl on this polymkeric substance reaches certain concentration in plasma etching residual washing liquid.
Among the present invention, the content of the described polymkeric substance that contains the pigment affinity groups is preferable is mass percent 0.001～3%.
Among the present invention, what described pigment affinity groups was preferable is hydroxyl or amino.As everyone knows, carboxyl also is a kind of pigment affinity groups, but what is called contains in the pigment affinity groups polymkeric substance and can contain carboxyl in the present invention, also can not contain carboxyl.Among the present invention, the molecular weight of the polymkeric substance that contains the pigment affinity groups is had no special requirements.
Among the present invention, the described polymkeric substance that contains the pigment affinity groups preferable for containing the acrylic polymer of pigment affinity groups, better is hydroxyl and/or amino acrylic polymer, the multipolymer of preferred hydroxy-ethyl acrylate class monomer and other acrylic ester monomers except that it, the multipolymer of acrylic ester monomer and acrylamide monomers, hydroxy-ethyl acrylate class monomer and other acrylic ester monomers except that it and the terpolymer of vinyl-containing monomers, and acrylic ester monomer, in the terpolymer of acrylamide monomers and vinyl-containing monomers one or more.
What wherein, the terpolymer of described hydroxy-ethyl acrylate class monomer and other acrylic ester monomers except that it and vinyl-containing monomers was preferable is hydroxy-ethyl acrylate, methyl acrylate and cinnamic terpolymer; What the terpolymer of described acrylic ester monomer, acrylamide monomers and vinyl-containing monomers was preferable is butyl acrylate, acrylamide and acrylic acid terpolymer.
What wherein, described acrylic ester monomer was preferable is methyl acrylate, ethyl acrylate, propyl acrylate, butyl acrylate, methyl methacrylate, Jia Jibingxisuanyizhi, propyl methacrylate, butyl methacrylate, hydroxyethyl methylacrylate or hydroxy-ethyl acrylate; What described hydroxy-ethyl acrylate class monomer was preferable is hydroxyethyl methylacrylate or hydroxy-ethyl acrylate.
Among the present invention, what the content of described azanol and derivant thereof was preferable is mass percent 1～30%.
Among the present invention, described azanol and/or its derivant are preferable is selected from salt (as: hydroxylamine hydrochloride) that azanol, azanol and mineral acid form, the azanol on amido and/or the hydroxyl hydrogen atom by C 1～C 2The derivant that replaces of substituting group in one or more (as N-methyl hydroxylamine, N, N-dimethyl hydroxylamine, acetyl group azanol, one or more in the 1-methoxyl amine).Its structural formula is as follows:
Figure A20081003597900081
Wherein: R 1, R 2And R 3Separately independently for generally being less than the substituting group of 3 carbon atoms, as methyl, ethyl, methoxyl, ethoxy and acetyl group etc.
Among the present invention, what described solvent was preferable is mass percent 20～70%.
Among the present invention, described solvent can be this area common solvent, preferable in sulfoxide, sulfone, imidazolidinone, pyrrolidone, imidazolone, ether, acid amides and the hydramine one or more, the preferred hydramine of being selected from.What described sulfoxide was preferable is dimethyl sulfoxide (DMSO); What described sulfone was preferable is sulfolane; What described imidazolidinone was preferable is 1,3-dimethyl-2-imidazolidinone; What described pyrrolidone was preferable is N-Methyl pyrrolidone; What described imidazolone was preferable is 1,3-dimethyl-2-imidazolone; What described ether was preferable is propylene glycol monomethyl ether and/or dipropylene glycol monomethyl ether; What described acid amides was preferable is dimethyl formamide; Described hydramine is preferable is in monoethanolamine, diethanolamine, triethanolamine, isopropanolamine, 2-(lignocaine) ethanol, ethyldiethanolamine and the diglycolamine one or more.
Among the present invention, what the content of described sequestrant was preferable is mass percent 0.1～20%.
Among the present invention, described sequestrant can be this area sequestrant commonly used, is generally the aryl compound that contains a plurality of functional groups, one or more in preferred catechol, adjacent mercapto-phenol, septichen, 1,2,3,-thrihydroxy-benzene and the gallic acid.
Among the present invention, what described liquid water content was preferable is mass percent 10～45%.
Agents useful for same of the present invention and raw material are all commercially available to be got.
Plasma etching residual washing liquid of the present invention can be made by the simple evenly mixing of mentioned component.
The invention still further relates to the using method of plasma etching residual washing liquid of the present invention: removing with plasma etching residual washing liquid on the wafer after the plasma etching residues, directly with dry getting final product after the rinsed with deionized water.
Positive progressive effect of the present invention is: plasma etching residual washing liquid of the present invention has kept the cleansing power of traditional azanol based semiconductor wafer cleaning fluid, and can directly can not produce the etching problem of metal (especially aluminium) in the rinse cycle after cleaning with water rinse, saved traditional azanol based cleaning liquid after cleaning for avoiding metal erosion to need the step of solvent rinsing, help reducing and pollute, reduce cost.
Description of drawings
Fig. 1 is wafer (Metal wafer) sem photograph without the metallic aluminium steel structure that cleans.
Fig. 2 is after the cleaning fluid of embodiment 16 formulated cleans, then wafer (Metal wafer) sem photograph of metallic aluminium steel structure after the rinsed with deionized water.
Fig. 3 is after traditional azanol based cleaning liquid cleans, the wafer of metallic aluminium steel structure after the rinsed with deionized water (Metal wafer) sem photograph.
Embodiment
Further specify the present invention with embodiment below, but the present invention is not limited.Among the following embodiment, number percent is mass percent.
Embodiment 1～24
Table 1 has provided the prescription of plasma etching residual washing liquid embodiment 1～24 of the present invention, presses listed component and content thereof in the table 1, simply mixes, and promptly makes plasma etching residual washing liquid.
Table 1 plasma etching residual washing liquid embodiment 1～24 of the present invention
Figure A20081003597900091
Figure A20081003597900101
Figure A20081003597900111
Figure A20081003597900121
Effect embodiment 1
Under 70 ℃, survey the corrosion rate of the cleaning fluid of embodiment 16 to metallic aluminium.
The rate of metal corrosion method of testing:
1) utilize Napson four-point probe instrument to test the resistance initial value (Rs1) of the blank silicon chip of 4*4cm aluminium;
2) the blank silicon chip of this 4*4cm aluminium is immersed in advance in the solution of constant temperature to 70 ℃ 30 minutes;
3) take out the blank silicon chip of this 4*4cm aluminium, use washed with de-ionized water, high pure nitrogen dries up, and utilizes the resistance value (Rs2) of the blank silicon chip of Napson four-point probe instrument test 4*4cm aluminium again;
4) repeated for the second and the 3rd step and test once, resistance value is designated as Rs3;
5) above-mentioned resistance value and soak time are input to calculate its corrosion rate in the calculation procedure.
Test result is: 1.93A/min (first 30 minutes) and 1.81A/min (second 30 minutes).The requirement that is less than 2A/min that above data are generally acknowledged less than industry.
Effect embodiment 2
(refer to Patent Document the US5672577 preparation, azanol: 20% with the clean-out system of embodiment 16 and traditional azanol class clean-out system as a comparison; Deionized water: 22%; Monoethanolamine, 48; Catechol: 10) wafer (Metal wafer) to the metallic aluminium steel structure cleans, and uses water rinse afterwards, then through the SEM characterization result of taking pictures, respectively shown in Fig. 2 and 3.Fig. 1 cleans preceding SEM photo for wafer.
As can be seen from Figure 1, there are not a lot of plasma etching residues to need to remove on the wafer of clean metal aluminum bronze structure (Metal wafer).Fig. 2 shows that embodiment 16 can remove the plasma etching residues on the wafer of metallic aluminium steel structure (Metal wafer) effectively, directly uses water rinse, does not produce the etching problem of metal wire.And after traditional azanol based cleaning liquid cleaned among Fig. 3, through water rinse, though also can remove the photoresistance residue effectively, metal wire had produced corrosion.
To sum up, clean-out system of the present invention has kept the cleansing power of traditional azanol based semiconductor wafer cleaning fluid, and can directly can not produce the etching problem of metal (especially aluminium) in the rinse cycle after cleaning with water rinse, solved traditional azanol based cleaning liquid after cleaning for avoiding metal erosion to need the problem of solvent rinsing, help reducing and pollute, reduce cost.

Claims (14)

1, a kind of plasma etching residual washing liquid, it contains azanol and/or its derivant, solvent, water, sequestrant, it is characterized in that: it also contains carboxylic polymkeric substance and the polymkeric substance that contains the pigment affinity groups.
2, plasma etching residual washing liquid as claimed in claim 1 is characterized in that: the content of described carbonyl bearing polymer is mass percent 0.001～3%.
3, plasma etching residual washing liquid as claimed in claim 1 is characterized in that: described carboxylic polymkeric substance is selected from one or more in carboxylic homopolymer, carboxylic multipolymer, carboxylic homopolymer salt and the carboxylic copolymer salt.
4, plasma etching residual washing liquid as claimed in claim 3 is characterized in that: described carboxylic homopolymer is one or more in HPMA, polyacrylic acid and the polymethylacrylic acid; Described carboxylic multipolymer is the multipolymer between the carboxylic monomer, and/or the multipolymer between vinyl-containing monomers and the carboxylic monomer; Described salt is one or more in ammonium salt, sylvite and the sodium salt.
5, plasma etching residual washing liquid as claimed in claim 4 is characterized in that: the multipolymer between the described carboxylic monomer is selected from acrylic acid and maleic acid, and/or methacrylic acid and maleic acid; Multipolymer between described vinyl-containing monomers and the carboxylic monomer is selected from one or more in styrene and acrylic copolymer, styrene and maleic acid, vinyl cyanide and maleic acid, ethene and acrylic copolymer, vinyl cyanide and acrylic copolymer, styrene and methacrylic acid copolymer, ethene and methacrylic acid copolymer and vinyl cyanide and the methacrylic acid copolymer; Described ammonium salt is an ammonium polyacrylate.
6, plasma etching residual washing liquid as claimed in claim 1 is characterized in that: the described content that contains the polymkeric substance of pigment affinity groups is mass percent 0.001～3%.
7, plasma etching residual washing liquid as claimed in claim 1 is characterized in that: the described polymkeric substance that contains the pigment affinity groups is the acrylic polymer that contains the pigment affinity groups.
8, as claim 1 or 7 described plasma etching residual washing liquids, it is characterized in that: described pigment affinity groups is hydroxyl or amino.
9, plasma etching residual washing liquid as claimed in claim 7, it is characterized in that: the described acrylic polymer that contains the pigment affinity groups is selected from the multipolymer of hydroxy-ethyl acrylate class monomer and other acrylic ester monomers except that it, the multipolymer of acrylic ester monomer and acrylamide monomers, hydroxy-ethyl acrylate class monomer, other acrylic ester monomers except that it and the terpolymer of vinyl-containing monomers, and in the terpolymer of acrylic ester monomer, acrylamide monomers and vinyl-containing monomers one or more.
10, plasma etching residual washing liquid as claimed in claim 9 is characterized in that: the terpolymer of described hydroxy-ethyl acrylate class monomer, other acrylic ester monomers except that it and vinyl-containing monomers is hydroxy-ethyl acrylate, methyl acrylate and cinnamic terpolymer; The terpolymer of described acrylic ester monomer, acrylamide monomers and vinyl-containing monomers is butyl acrylate, acrylamide and acrylic acid terpolymer.
11, as claim 9 or 10 described plasma etching residual washing liquids, it is characterized in that: described acrylic ester monomer is methyl acrylate, ethyl acrylate, propyl acrylate, butyl acrylate, methyl methacrylate, Jia Jibingxisuanyizhi, propyl methacrylate, butyl methacrylate, hydroxyethyl methylacrylate or hydroxy-ethyl acrylate; Described hydroxy-ethyl acrylate class monomer is hydroxyethyl methylacrylate or hydroxy-ethyl acrylate.
12, plasma etching residual washing liquid as claimed in claim 1 is characterized in that: the content of described azanol and derivant thereof is mass percent 1～30%; Described solvent is a mass percent 20～70%; Described liquid water content is a mass percent 10～45%; The content of described sequestrant is mass percent 0.1～20%.
13, plasma etching residual washing liquid as claimed in claim 1 is characterized in that: described azanol and/or its derivant are selected from azanol, the salt that azanol and mineral acid form, and on the azanol on amido and/or the hydroxyl hydrogen atom by C 1～C 2The derivant that replaces of substituting group in one or more; Described solvent is selected from one or more in sulfoxide, sulfone, imidazolidinone, pyrrolidone, imidazolone, ether, acid amides and the hydramine; Described sequestrant is the aryl compound that contains a plurality of functional groups.
14, plasma etching residual washing liquid as claimed in claim 13 is characterized in that: the salt that described azanol and mineral acid form is a hydroxylamine hydrochloride; On the described azanol on amido and/or the hydroxyl hydrogen atom be N-methyl hydroxylamine, N by the derivant that the substituting group of C1～C2 replaces, one or more in N-dimethyl hydroxylamine, acetyl group azanol and the 1-methoxyl amine; Described sulfoxide is a dimethyl sulfoxide (DMSO); Described sulfone is a sulfolane; Described imidazolidinone is 1,3-dimethyl-2-imidazolidinone; Described pyrrolidone is a N-Methyl pyrrolidone; Described imidazolone is 1,3-dimethyl-2-imidazolone; Described ether is propylene glycol monomethyl ether and/or dipropylene glycol monomethyl ether; Described acid amides is a dimethyl formamide; Described hydramine is one or more in monoethanolamine, diethanolamine, triethanolamine, isopropanolamine, 2-(lignocaine) ethanol, ethyldiethanolamine and the diglycolamine; Described sequestrant is one or more in catechol, adjacent mercapto-phenol, septichen, 1,2,3,-thrihydroxy-benzene and the gallic acid.
CN200810035979.0A 2008-04-14 2008-04-14 Plasma etching residual washing liquid Pending CN101561641A (en)

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PCT/CN2009/000380 WO2009127119A1 (en) 2008-04-14 2009-04-07 Detergent for removing plasma etching residues

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