CN116262889B - Application of neutralization cleaning agent after plasma etching cleaning in cleaning semiconductor device - Google Patents
Application of neutralization cleaning agent after plasma etching cleaning in cleaning semiconductor device Download PDFInfo
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- CN116262889B CN116262889B CN202111523248.2A CN202111523248A CN116262889B CN 116262889 B CN116262889 B CN 116262889B CN 202111523248 A CN202111523248 A CN 202111523248A CN 116262889 B CN116262889 B CN 116262889B
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- hydroxylamine
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- 238000006386 neutralization reaction Methods 0.000 title claims abstract description 36
- 239000012459 cleaning agent Substances 0.000 title claims abstract description 35
- 238000004140 cleaning Methods 0.000 title claims abstract description 23
- 238000001020 plasma etching Methods 0.000 title claims abstract description 11
- 239000004065 semiconductor Substances 0.000 title abstract description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 41
- AVXURJPOCDRRFD-UHFFFAOYSA-N Hydroxylamine Chemical compound ON AVXURJPOCDRRFD-UHFFFAOYSA-N 0.000 claims abstract description 30
- 239000004094 surface-active agent Substances 0.000 claims abstract description 28
- XUJNEKJLAYXESH-UHFFFAOYSA-N cysteine Natural products SCC(N)C(O)=O XUJNEKJLAYXESH-UHFFFAOYSA-N 0.000 claims abstract description 23
- 235000018417 cysteine Nutrition 0.000 claims abstract description 23
- 239000002994 raw material Substances 0.000 claims abstract description 17
- 239000002738 chelating agent Substances 0.000 claims abstract description 13
- 229920001577 copolymer Polymers 0.000 claims abstract description 3
- JVTAAEKCZFNVCJ-UHFFFAOYSA-N lactic acid Chemical group CC(O)C(O)=O JVTAAEKCZFNVCJ-UHFFFAOYSA-N 0.000 claims description 40
- 235000012431 wafers Nutrition 0.000 claims description 26
- 239000008367 deionised water Substances 0.000 claims description 23
- 229910021641 deionized water Inorganic materials 0.000 claims description 23
- 229920001400 block copolymer Polymers 0.000 claims description 21
- 235000014655 lactic acid Nutrition 0.000 claims description 20
- 239000004310 lactic acid Substances 0.000 claims description 20
- 238000002791 soaking Methods 0.000 claims description 8
- 238000000861 blow drying Methods 0.000 claims description 5
- 238000005406 washing Methods 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 230000007797 corrosion Effects 0.000 abstract description 17
- 238000005260 corrosion Methods 0.000 abstract description 17
- 229910052751 metal Inorganic materials 0.000 abstract description 13
- 239000002184 metal Substances 0.000 abstract description 13
- 230000000694 effects Effects 0.000 abstract description 8
- 239000012535 impurity Substances 0.000 abstract description 7
- 239000007788 liquid Substances 0.000 description 17
- 150000001412 amines Chemical class 0.000 description 16
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 10
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 10
- 230000003472 neutralizing effect Effects 0.000 description 10
- 239000010949 copper Substances 0.000 description 9
- 238000000034 method Methods 0.000 description 9
- 229910052802 copper Inorganic materials 0.000 description 8
- 238000005530 etching Methods 0.000 description 8
- 238000012360 testing method Methods 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 7
- GIAFURWZWWWBQT-UHFFFAOYSA-N 2-(2-aminoethoxy)ethanol Chemical compound NCCOCCO GIAFURWZWWWBQT-UHFFFAOYSA-N 0.000 description 6
- 238000002156 mixing Methods 0.000 description 6
- 238000002360 preparation method Methods 0.000 description 6
- 239000000523 sample Substances 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- 239000005380 borophosphosilicate glass Substances 0.000 description 5
- 229910021645 metal ion Inorganic materials 0.000 description 5
- 229910052757 nitrogen Inorganic materials 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 4
- 239000003989 dielectric material Substances 0.000 description 4
- LNTHITQWFMADLM-UHFFFAOYSA-N gallic acid Chemical compound OC(=O)C1=CC(O)=C(O)C(O)=C1 LNTHITQWFMADLM-UHFFFAOYSA-N 0.000 description 4
- 230000005764 inhibitory process Effects 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 description 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 230000033228 biological regulation Effects 0.000 description 2
- 239000006227 byproduct Substances 0.000 description 2
- YCIMNLLNPGFGHC-UHFFFAOYSA-N catechol Chemical compound OC1=CC=CC=C1O YCIMNLLNPGFGHC-UHFFFAOYSA-N 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 238000001914 filtration Methods 0.000 description 2
- 229940074391 gallic acid Drugs 0.000 description 2
- 235000004515 gallic acid Nutrition 0.000 description 2
- 238000007654 immersion Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- XUJNEKJLAYXESH-REOHCLBHSA-N L-Cysteine Chemical compound SC[C@H](N)C(O)=O XUJNEKJLAYXESH-REOHCLBHSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- 206010038731 Respiratory tract irritation Diseases 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 238000001479 atomic absorption spectroscopy Methods 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
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- 210000003754 fetus Anatomy 0.000 description 1
- 238000011010 flushing procedure Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
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- 229910052742 iron Inorganic materials 0.000 description 1
- 239000011133 lead Substances 0.000 description 1
- 229920002521 macromolecule Polymers 0.000 description 1
- 238000003760 magnetic stirring Methods 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 231100000219 mutagenic Toxicity 0.000 description 1
- 230000003505 mutagenic effect Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 231100000590 oncogenic Toxicity 0.000 description 1
- 230000002246 oncogenic effect Effects 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000011056 performance test Methods 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 229920001568 phenolic resin Polymers 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 239000012488 sample solution Substances 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 231100000378 teratogenic Toxicity 0.000 description 1
- 230000003390 teratogenic effect Effects 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
- 231100000419 toxicity Toxicity 0.000 description 1
- 230000001988 toxicity Effects 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
- C11D1/66—Non-ionic compounds
- C11D1/835—Mixtures of non-ionic with cationic compounds
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/02—Inorganic compounds ; Elemental compounds
- C11D3/04—Water-soluble compounds
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/20—Organic compounds containing oxygen
- C11D3/2075—Carboxylic acids-salts thereof
- C11D3/2086—Hydroxy carboxylic acids-salts thereof
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/34—Organic compounds containing sulfur
- C11D3/349—Organic compounds containing sulfur additionally containing nitrogen atoms, e.g. nitro, nitroso, amino, imino, nitrilo, nitrile groups containing compounds or their derivatives or thio urea
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
- C11D1/38—Cationic compounds
- C11D1/62—Quaternary ammonium compounds
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
- C11D1/66—Non-ionic compounds
- C11D1/722—Ethers of polyoxyalkylene glycols having mixed oxyalkylene groups; Polyalkoxylated fatty alcohols or polyalkoxylated alkylaryl alcohols with mixed oxyalkylele groups
-
- C11D2111/22—
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses an application of a neutralization cleaning agent after plasma etching cleaning in cleaning a semiconductor device. The raw materials of the applied neutralization cleaning agent comprise the following components in percentage by mass: 1% -5% of cysteine, 1% -5% of hydroxylamine, 0.1% -0.5% of EO-PO-EO segmented copolymer L31, 0.1% -1% of surfactant B, 0.1% -1% of chelating agent and water, and the balance is water; the sum of the mass fractions of the components is 100 percent. The neutralization cleaning agent has strong neutralization force, low corrosion rate on metal and dielectric layers and good impurity ion removal effect.
Description
Technical Field
The invention relates to application of a neutralization cleaning agent after plasma etching cleaning in cleaning a semiconductor device.
Background
In the seventies of the last century, with the further development of semiconductor materials and equipment technologies, semiconductor manufacturing technologies have entered the micron level, and corresponding cleaning processes have also improved greatly with the increase of metal etching requirements. The photoresist used at that time is mainly I-line phenolic resin photoresist, so that the cleaning process needs to have good macromolecule dissolving capacity, and the cleaning process is performed by applying the cleaning liquid of organic solvent systems such as dimethyl sulfoxide (DMSO), N-methylpyrrolidone (NMP), ether and the like. But they cannot meet the requirements of smaller line width and higher integration density processes due to the characteristics of wet etching process and lift-off stripping process.
By the 90 s, the plasma etching technology has made great progress on semiconductors, and due to the anisotropic etching characteristics, the etching patterns are more accurate, the etching linewidth is smaller, the metal side wall control is better, meanwhile, byproducts after etching can be taken away in a gas form, and only a small amount of byproducts (polymers) need to be cleaned through wet chemicals.
Generally, a special cleaning solution after plasma etching can effectively clean residues after etching, but residues are remained on the surface of a wafer. These cleaning solution residues are typically alkaline and, if not removed, can corrode the wafer surface material. To avoid corrosion of the metal in the subsequent water wash, IPA or NMP is used after the wash to neutralize and wash away the wash liquid residue. In addition, to further reduce corrosion, CO is typically introduced into the DI tank 2 Further reducing the occurrence of corrosion.
However, NMP is limited in its use due to its strong toxicity and environmental pollution. NMP has a uniform classification that is considered toxic to reproduction and may damage the fetus. Thus, it is a CMR substance (a tri-substance, i.e., oncogenic, mutagenic, teratogenic). In addition, it stimulates the eyes and skin and may cause respiratory tract irritation. NMP was added to the candidate list as a highly interesting Substance (SVHC) in 2011, and a proposal was made in 2018 to consider it as an authorized substance (proposal 8 in the read regulation annex XIV). One regulation of the European Union in 2019 added NMP to REACH annex XVII. In addition to the European Union, the United states, many areas have begun to restrict the use of NMP and place more tax on manufacturers that use NMP.
Based on this, the market is looking for a product that replaces NMP as a neutralizing cleaner for the cleaning liquid residue after plasma etching. The existing neutralization cleaning agent in the market is not friendly to copper, has stronger corrosiveness and can not meet the market demand.
Therefore, the development of a neutralizing cleaner having high compatibility with copper is eager.
Disclosure of Invention
The invention aims to overcome the defects that the neutralization cleaning agent after plasma etching cleaning is not friendly to copper or has strong corrosiveness and the like in the prior art, and provides application of the neutralization cleaning agent after plasma etching cleaning in cleaning semiconductor devices. The neutralization cleaning agent has strong neutralization force, low corrosion rate on metal and dielectric layers and good impurity ion removal effect.
The invention provides an application of a neutralization cleaning agent in cleaning silicon wafers after plasma etching cleaning;
the neutralizing cleaning agent comprises the following raw materials in percentage by mass: 1% -5% of cysteine, 1% -5% of hydroxylamine, 0.1% -0.5% of EO-PO-EO segmented copolymer L31, 0.1% -1% of surfactant B, 0.1% -1% of chelating agent and water, and the balance is water; the sum of the mass fractions of the components is 100 percent; the mass fraction of each component is the mass fraction of the component in the neutralization cleaning agent;
wherein the surfactant B is
The neutralizing cleaning agent, the chelating agent may be a chelating agent conventional in the art, preferably lactic acid.
The neutralizing cleaning agent, the water may be conventional in the art, preferably deionized water.
The mass fraction of the cysteine in the neutralization cleaning agent is preferably 1%,2.5% or 5%.
The mass fraction of the hydroxylamine in the neutralization cleaning agent is preferably 3% -5%.
The mass fraction of the EO-PO-EO block copolymer L31 is preferably 0.3% -0.5%.
The mass fraction of the surfactant B in the neutralization cleaning agent is preferably 0.5% -1%.
The mass fraction of the chelating agent in the neutralization cleaning agent is preferably 0.5% -1%, more preferably 0.5% -0.6%.
In one embodiment of the invention, the chelating agent is lactic acid;
the mass fraction of the hydroxylamine is 3% -5%;
the mass fraction of the EO-PO-EO block copolymer L31 is 0.3-0.5%;
the mass fraction of the surfactant B is 0.5% -1%;
the mass fraction of the chelating agent is preferably 0.5% -1%.
In one embodiment of the invention, the chelating agent is lactic acid;
the mass fraction of the hydroxylamine is 3% -5%;
the mass fraction of the EO-PO-EO block copolymer L31 is 0.3-0.5%;
the mass fraction of the surfactant B is 0.5% -1%;
the mass fraction of the chelating agent is preferably 0.5% -0.6%.
In one embodiment of the invention, the neutralizing cleaning agent comprises the following raw materials in percentage by mass: 1% -5% of cysteine, 1% -5% of hydroxylamine, 0.1% -0.5% of EO-PO-EO block copolymer L31, 0.1% -1% of surfactant B, 0.1% -1% of chelating agent and water, and the balance is water;
wherein the mass fraction of the cysteine, the mass fraction of the hydroxylamine, the mass fraction of the EO-PO-EO block copolymer L31, the mass fraction of the surfactant B, the kind of the chelating agent, the mass fraction, the kind of the water and the mass fraction of the water are as described above.
Preferably, the neutralization cleaning agent consists of any one of the following formulas:
scheme one: 2.5% cysteine, 3% hydroxylamine, 0.3% EO-PO-EO block copolymer L31, 0.5% of the surfactant B, 0.5% lactic acid and the balance deionized water;
scheme II: 2.5% cysteine, 3% hydroxylamine, 0.3% EO-PO-EO block copolymer L31, 0.5% of the surfactant B, 0.6% lactic acid and the balance deionized water;
scheme III: 1% cysteine, 3% hydroxylamine, 0.5% EO-PO-EO block copolymer L31, 0.5% of the surfactant B, 0.5% lactic acid and the balance deionized water;
scheme IV: 1% cysteine, 3% hydroxylamine, 0.3% EO-PO-EO block copolymer L31, 0.5% of the surfactant B, 0.5% lactic acid and the balance deionized water;
scheme five: 2.5% cysteine, 5% hydroxylamine, 0.3% EO-PO-EO block copolymer L31, 0.5% of the surfactant B, 0.5% lactic acid and the balance deionized water;
scheme six: 5% cysteine, 3% hydroxylamine, 0.3% EO-PO-EO block copolymer L31, 0.5% of the surfactant B, 0.5% lactic acid and the balance deionized water;
scheme seven: 2.5% cysteine, 3% hydroxylamine, 0.3% EO-PO-EO block copolymer L31, 0.5% of the surfactant B, 1% lactic acid and the balance deionized water;
scheme eight: 2.5% cysteine, 3% hydroxylamine, 0.3% EO-PO-EO block copolymer L31, 1% of the surfactant B, 0.5% lactic acid and the balance deionized water.
In the application, the soaking time of the wafer is preferably 20-90min.
In such applications, the soaking temperature of the wafer is preferably room temperature.
In the application, it is also preferable to include water washing (e.g., deionized water washing) and blow drying (e.g., nitrogen blow drying) after the wafer soaking is completed.
The invention also provides the neutralization cleaning agent.
The invention also provides a preparation method of the neutralization cleaning agent, which comprises the following steps: mixing the raw materials.
In the preparation method, the mixing is preferably to add the solid component in the raw materials into the liquid component and uniformly stir.
In the preparation method, the temperature of the mixing is preferably room temperature.
In the preparation method, preferably, the mixing is further followed by shaking for the purpose of thoroughly mixing the raw material components, filtration for removing insoluble matters, and the like.
As used herein, "room temperature" refers to 10-30deg.C.
On the basis of conforming to the common knowledge in the field, the above preferred conditions can be arbitrarily combined to obtain the preferred examples of the invention.
The surfactant B in the invention is self-made, and other used reagents and raw materials are commercially available.
The invention has the positive progress effects that: the neutralization cleaning agent has strong neutralization force, low corrosion rate on metal and dielectric layers and good impurity ion removal effect.
Detailed Description
The invention is further illustrated by means of the following examples, which are not intended to limit the scope of the invention. The experimental methods, in which specific conditions are not noted in the following examples, were selected according to conventional methods and conditions, or according to the commercial specifications.
Surfactant BPrepared for homemade, according to CN108675934a, examples 1 (step 1), 2 (step 2) and 3 (step 3).
1. Examples 1-8 and comparative examples 1-15:
preparation of neutralizing cleaning agent
The raw material components of the neutralization cleaning agent are raw material components (namely cysteine, hydroxylamine, EO-PO-EO block copolymer L31, surfactant B and lactic acid) and deionized water in the table 1; the content of the raw material components of the neutralization cleaning agent is the content of the raw material components in table 2.
The raw material components in table 1 were added to the liquid raw material at room temperature according to the mass fraction in table 2, and after the balance was made up to 100% with deionized water, they were stirred uniformly. After mixing, the raw material components were thoroughly mixed by shaking, and insoluble matter was removed by filtration.
In the following examples, the specific operating temperatures are not limited, and all refer to being conducted under room temperature conditions.
Table 1: component species in the examples
Table 2: examples and the content of the raw material components in the cleaning agent
The "balance" in the table is the mass percent of the components other than water subtracted from 100% in each example.
2. Effect examples
The testing steps are as follows:
the performance tests of the neutralization cleaners of examples 1 to 8 and comparative examples 1 to 15 are shown in tables 3 to 4. The specific test method is as follows:
1. neutralization force test
Test purpose:
experiments were performed to determine the "buffering capacity" or "amine neutralization capacity" of the samples of the present invention, neutralizing the amine solution until ph=7. When the pH is more than 7 (alkaline), the probability of metal corrosion will increase.
The testing method comprises the following steps:
100g of a neutralizing cleaning agent (inventive or comparative) was added in a beaker with a magnetic stirring bar, and amine liquid a and amine liquid B were added dropwise thereto, respectively, to ph=7, and the pH was monitored with a fisher pH meter with two-point calibration. The percentage of the amount of amine liquid added dropwise was calculated, and percentage=mass of amine liquid/(mass of amine liquid+mass of 100g of neutralizing cleaning agent).
Preparation of amine liquid:
the amine liquid A consists of 55% of Diglycolamine (DGA), 10% of gallic acid, 30% of Hydroxylamine (HDA) and 5% of water by mass fraction;
amine liquid B consists of 27.5% of Diglycolamine (DGA), 27.5% of Monoethanolamine (MEA), 30% of Hydroxylamine (HDA), 10% of gallic acid and 5% of water by mass fraction;
the amine liquid C consists of 60% Diglycolamine (DGA), 5% catechol and 35% Hydroxylamine (HDA) by mass fraction.
Table 3: amine neutralization force
2. Metal corrosion inhibition capability test 1
The wafer coated with the metal layer is respectively placed in the sample of the invention or the sample of the comparative example added with 8% of amine liquid A or amine liquid C, soaked for 30 minutes at room temperature, then rinsed with deionized water and dried with nitrogen.
The film thickness of the wafer before and after soaking and blow-drying was measured by a four-point probe method, and the etching rate (unit). Wherein, the wafer standard Al sheet=Al/0.5% Cu, +.>(i.e., standard Al sheet thickness +.>Copper content 0.5%); />(i.e., ti sheet thickness +.>)；/> (i.e. W sheet thickness is)。
The results show that there is no loss of metal thickness within experimental error.
3. Metal corrosion inhibition capability test 2
The wafer coated with the metal layer is respectively placed in a sample without adding amine liquid or a comparative sample, and is directly soaked for 60 minutes at room temperature (the solution is stirred during the period), then deionized water is used for flushing, and nitrogen is used for drying.
The film thickness of the wafer before and after soaking and blow-drying was measured by a four-point probe method, and the etching rate (unit). Wherein the wafer standard Al plate=Al/0.5% Cu, < >>Ti sheet = Ti @, @>W sheet = W,cu sheet = Cu,>
table 4: corrosion rate
The corrosion rates in the table are divided into three classes: corrosion is less thanIs denoted as A; corrosion at->Is denoted as B; corrosion is greater than->In (C).
4. Dielectric layer corrosion inhibition capability test
Besides metal materials, various dielectric materials are usually arranged on the wafer, and the neutralization cleaning agent is compatible with the dielectric materials, namely, the neutralization cleaning agent has a corrosion inhibition effect on the dielectric materials. These substrates are typically dielectric materials of borophosphosilicate glass (BPSG) (boron and phosphorus content of about 5 wt%) and tetraethyl orthosilicate (TEOS).
3 inch (7.62 cm) BPSG was measured by Geartner Scientific L115 ellipsometerDense) blanket and 3 inch (7.62 cm)/(3 inch)>Film thickness of the wafer. The two wafers were immersed in the inventive or comparative samples at room temperature for 60 minutes, then rinsed with deionized water and dried with nitrogen, and then the samples were subjected to film thickness measurement.
The results showed no significant change in film thickness within experimental error.
5. Wafer surface impurity ion removal effect test
Impurities in the cleaning chemistry or particles or impurities from the processing equipment are deposited on the wafer and contaminate the wafer and need to be removed during the neutralization process.
3 inch (7.62 cm) BPSGThe wafers were immersed in solutions consisting of 100ppb each of sodium, potassium, calcium, iron (III), copper, lead, manganese, zinc or nickel for 5 minutes at room temperature. The wafer was then dried with a nitrogen stream. The wafer was then immersed in the inventive or comparative samples for 20 minutes. The concentration of metal ions in the sample solution was analyzed by atomic absorption spectroscopy (GFAA), and the concentration of metal ions in the solution after immersion minus the concentration of metal ions before immersion was the increase in concentration of metal ions in the solution.
Table 5: metal ion increment (ppb) in solution
/>
According to the embodiment, the neutralization cleaning agent has better amine neutralization force, has lower corrosion rate on metal layers (such as Al, ti, W and Cu) and dielectric layers (borophosphosilicate glass and tetraethyl orthosilicate), and has good impurity ion removal effect on wafers.
Claims (5)
1. The application of a neutralization cleaning agent in cleaning silicon wafers after plasma etching cleaning is characterized in that: the neutralization cleaning agent is prepared from the following raw materials in percentage by mass: 1% -5% of cysteine, 3% -5% of hydroxylamine, 0.3% -0.5% of EO-PO-EO segmented copolymer L31, 0.5% -1% of surfactant B, 0.5% -0.6% of chelating agent and water, and the balance is water; the sum of the mass fractions of the components is 100 percent;
wherein the surfactant B is
The chelating agent is lactic acid.
2. The use according to claim 1, wherein: the water is deionized water.
3. The use according to claim 1, wherein: the mass fraction of the cysteine is 1%,2.5% or 5%.
4. The use according to claim 1, wherein: the raw materials consist of any one of the following schemes:
scheme one: 2.5% cysteine, 3% hydroxylamine, 0.3% EO-PO-EO block copolymer L31, 0.5% of the surfactant B, 0.5% lactic acid and the balance deionized water;
scheme II: 2.5% cysteine, 3% hydroxylamine, 0.3% EO-PO-EO block copolymer L31, 0.5% of the surfactant B, 0.6% lactic acid and the balance deionized water;
scheme III: 1% cysteine, 3% hydroxylamine, 0.5% EO-PO-EO block copolymer L31, 0.5% of the surfactant B, 0.5% lactic acid and the balance deionized water;
scheme IV: 1% cysteine, 3% hydroxylamine, 0.3% EO-PO-EO block copolymer L31, 0.5% of the surfactant B, 0.5% lactic acid and the balance deionized water;
scheme five: 2.5% cysteine, 5% hydroxylamine, 0.3% EO-PO-EO block copolymer L31, 0.5% of the surfactant B, 0.5% lactic acid and the balance deionized water;
scheme six: 5% cysteine, 3% hydroxylamine, 0.3% EO-PO-EO block copolymer L31, 0.5% of the surfactant B, 0.5% lactic acid and the balance deionized water;
scheme seven: 2.5% cysteine, 3% hydroxylamine, 0.3% EO-PO-EO block copolymer L31, 1% of the surfactant B, 0.5% lactic acid and the balance deionized water.
5. The use according to claim 1, wherein: the application satisfies one or more of the following conditions:
(1) In the application, the soaking time of the wafer is 20-90min;
(2) In the application, the soaking temperature of the wafer is room temperature;
(3) In the application, the wafer also comprises water washing and blow drying after the soaking is finished.
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