CN112864034A - Aluminum corrosion treatment method and system - Google Patents
Aluminum corrosion treatment method and system Download PDFInfo
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- CN112864034A CN112864034A CN201911180695.5A CN201911180695A CN112864034A CN 112864034 A CN112864034 A CN 112864034A CN 201911180695 A CN201911180695 A CN 201911180695A CN 112864034 A CN112864034 A CN 112864034A
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- H01L22/10—Measuring as part of the manufacturing process
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- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
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- C23F1/20—Acidic compositions for etching aluminium or alloys thereof
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Abstract
The invention discloses a processing method and a system for aluminum corrosion, wherein the processing method comprises the following steps: s1, judging whether aluminum corrosion occurs on the target surface where the metal aluminum is positioned on the processed object, if so, executing a step S2; s2, immersing the target surface into an acidic corrosion solution to enable the acidic corrosion solution and the metal aluminum to perform an isotropic reaction so as to remove corrosive substances generated on the metal aluminum. The method can automatically, timely and accurately determine whether the surface of the metal aluminum on the silicon chip is corroded by the aluminum through image comparison and/or fluorescence analysis, namely, the corrosion phenomenon can be found at the initial stage of the aluminum corrosion, and then the silicon chip subjected to the aluminum corrosion is immersed in the acidic corrosion liquid for corrosion treatment, so that the mixture of the aluminum and the halogen element is quickly removed, namely, the metal aluminum is prevented from being further corroded through simple and effective wet treatment, the continuous deterioration caused by the continuous reaction of the halogen element and the aluminum is avoided, and the reliability of the product is effectively ensured.
Description
Technical Field
The invention relates to a semiconductor process treatment method, in particular to a treatment method and a treatment system for aluminum corrosion.
Background
Aluminum is a commonly used interconnect metal material in semiconductor integrated circuits, and is the most commonly used metal material in metallization processes of semiconductor fabrication processes. Among them, the Aluminum Corrosion phenomenon, that is, the generation of F/CL-containing Corrosion products by the reaction of metallic Aluminum and F/CL (fluorine/chlorine) and other halogen elements, is a common phenomenon, and is specifically shown in fig. 1 and 2, in which a represents a silicon wafer and B represents a Corrosion product. Once aluminum corrosion occurs on the silicon wafer, if the aluminum is not accurately processed in time, the F/CL continues to react with the aluminum, so that the corrosion is further deteriorated, thereby having a serious influence on the reliability of the product.
Disclosure of Invention
The invention provides a method and a system for treating aluminum corrosion, aiming at overcoming the defect that in the prior art, after aluminum corrosion occurs, halogen elements can continuously react with aluminum to influence the reliability of a product.
The invention solves the technical problems through the following technical scheme:
the invention provides a treatment method for aluminum corrosion, which comprises the following steps:
s1, judging whether aluminum corrosion occurs on the target surface where the metal aluminum is positioned on the processed object, if so, executing a step S2;
s2, immersing the target surface into an acidic corrosive liquid to enable the acidic corrosive liquid and the metal aluminum to perform an isotropic reaction so as to remove corrosive generated on the metal aluminum.
Preferably, step S2 is followed by:
and S3, washing the target surface by using deionized water.
Preferably, step S1 includes:
s11, scanning the surface of the target by adopting scanning equipment and acquiring a target image;
s12, judging whether the target image is consistent with the sample image, and if so, determining that the target surface is not subjected to aluminum corrosion; otherwise, determining that the target surface is subjected to aluminum corrosion.
Preferably, step S1 includes:
s13, adopting at least one light beam with a set incident angle to irradiate the target surface and acquiring a reflection angle of a corresponding reflected light beam;
s14, judging whether the reflection angle is equal to the set incidence angle or not, and if so, determining that the target surface is not subjected to aluminum corrosion; otherwise, determining that the target surface is subjected to aluminum corrosion; or the like, or, alternatively,
when the light beams with a plurality of set incidence angles are irradiated to the target surface, step S13 is followed by:
s15, acquiring a first number of the reflected light beams with the same reflection angle;
s16, calculating the ratio of the first quantity to the total quantity of the light beams with the set incidence angle;
s17, judging whether the ratio exceeds a set threshold value or not, and if so, determining that the target surface is not subjected to aluminum corrosion; otherwise, determining that the target surface is subjected to aluminum corrosion.
Preferably, the corrosive substance is a mixture containing aluminum and halogen elements;
step S1 includes:
s18, emitting incident light with a set wavelength to the surface of the target by adopting fluorescence analysis equipment and acquiring a corresponding fluorescence image;
s19, analyzing the fluorescence image, judging whether halogen elements exist or not, and if yes, determining that the target surface is subjected to aluminum corrosion; otherwise, determining that no aluminum corrosion occurs on the target surface.
Preferably, the acidic corrosive liquid comprises 65-85% of phosphoric acid, 5-15% of acetic acid, 1-5% of nitric acid, 1-3% of fluoroboric acid and 2-5% of water.
Preferably, the chemical reaction time in step S2 is 1 minute to 2 minutes, and the chemical reaction rate is
E.m.E.E./min
Per minute; and/or the presence of a gas in the gas,
the processed object includes a silicon wafer.
The invention also provides a processing system for aluminum corrosion, which comprises a judgment module and a processing module;
the judging module is used for judging whether aluminum corrosion occurs on the target surface where the metal aluminum is positioned on the processed object, and if so, the processing module is called;
the processing module is used for immersing the target surface into an acidic corrosive liquid to enable the acidic corrosive liquid and the metal aluminum to perform an isotropic reaction so as to remove corrosive substances generated on the metal aluminum.
Preferably, the treatment system further comprises a rinse module;
the rinsing module is used for rinsing the target surface with deionized water.
Preferably, the judging module comprises a target image unit and a first judging unit;
the target image unit is used for scanning the target surface by adopting scanning equipment and acquiring a target image;
the first judging unit is used for judging whether the target image is consistent with the sample image or not, and if so, determining that the target surface is not subjected to aluminum corrosion; otherwise, determining that the target surface is subjected to aluminum corrosion.
Preferably, the judging module includes a reflection angle obtaining unit and a second judging unit;
the reflection angle acquisition unit is used for adopting at least one light beam with a set incidence angle to irradiate the target surface and acquiring the reflection angle of the corresponding reflected light beam;
the second judging unit is used for judging whether the reflection angle is equal to the set incidence angle or not, and if so, determining that the target surface is not subjected to aluminum corrosion; otherwise, determining that the target surface is subjected to aluminum corrosion; or the like, or, alternatively,
when a plurality of light beams with the set incidence angles are irradiated to the target surface, the judging module comprises a quantity obtaining unit, a ratio calculating unit and a third judging unit;
the quantity acquiring unit is used for acquiring a first quantity of the reflected light beams with the same reflection angle;
the ratio calculation unit is used for calculating the ratio of the first number to the total number of the light beams with the set incidence angle;
the third judging unit is used for judging whether the ratio exceeds a set threshold value or not, and if so, determining that the target surface is not subjected to aluminum corrosion; otherwise, determining that the target surface is subjected to aluminum corrosion.
Preferably, the corrosive substance is a mixture containing aluminum and halogen elements;
the judgment module comprises a fluorescence image acquisition unit and a fourth judgment unit;
the fluorescence image acquisition unit is used for emitting incident light with a set wavelength to the target surface by adopting fluorescence analysis equipment and acquiring a corresponding fluorescence image;
the fourth judging unit is used for analyzing the fluorescence image, judging whether halogen elements exist or not, and if yes, determining that the target surface is subjected to aluminum corrosion; otherwise, determining that no aluminum corrosion occurs on the target surface.
Preferably, the acidic corrosive liquid comprises 65-85% of phosphoric acid, 5-15% of acetic acid, 1-5% of nitric acid, 1-3% of fluoroboric acid and 2-5% of water.
Preferably, the chemical reaction time for removing the corrosive in the processing module is 1 minute to 2 minutes, and the chemical reaction rate is
E.m.E.E./min
Per minute; and/or the presence of a gas in the gas,
the processed object includes a silicon wafer.
The positive progress effects of the invention are as follows:
according to the invention, whether the surface of the metal aluminum on the silicon chip is subjected to aluminum corrosion can be automatically, timely and accurately determined through image comparison and/or fluorescence analysis, namely, the corrosion phenomenon can be found at the initial stage of aluminum corrosion, and then the silicon chip subjected to aluminum corrosion is immersed in the acidic corrosion liquid for corrosion treatment, so that the mixture of aluminum and halogen elements is quickly removed, namely, the metal aluminum is prevented from being further corroded through simple and effective wet treatment, continuous deterioration caused by continuous reaction of the halogen elements and aluminum is avoided, and the reliability of the product is effectively ensured.
Drawings
FIG. 1 is a first scanning electron microscope image of aluminum corrosion on a conventional silicon wafer.
FIG. 2 is a second SEM image of aluminum corrosion on a conventional silicon wafer.
FIG. 3 is a flowchart of a method for treating aluminum corrosion according to example 1 of the present invention.
FIG. 4 is a first SEM image of an Al corrosion treated by the method of example 1.
FIG. 5 is a second SEM image of an Al corrosion treated by the method of example 1.
FIG. 6 is a first flowchart of a processing method for aluminum etching according to embodiment 2 of the present invention.
FIG. 7 is a second flowchart of the aluminum etching processing method in embodiment 2 of the present invention.
FIG. 8 is a third flowchart of the processing method of aluminum etching in embodiment 2 of the present invention.
FIG. 9 is a fourth flowchart of the aluminum etching treatment method according to embodiment 2 of the present invention.
FIG. 10 is a first fluorescence image of fluorescence analysis before treatment according to the method for treating aluminum corrosion of example 2 of the present invention.
FIG. 11 is a second fluorescence image of fluorescence analysis after treatment by the aluminum corrosion treatment method of example 2 of the present invention.
FIG. 12 is a block diagram of a processing system for aluminum etching according to embodiment 3 of the present invention.
FIG. 13 is a schematic diagram of a first module of an aluminum etching processing system according to embodiment 4 of the present invention.
FIG. 14 is a second block diagram of an aluminum etching system according to embodiment 4 of the present invention.
FIG. 15 is a third block diagram of an aluminum etching system according to embodiment 4 of the present invention.
FIG. 16 is a fourth block diagram of an aluminum etching system according to embodiment 4 of the present invention.
Detailed Description
The invention is further illustrated by the following examples, which are not intended to limit the scope of the invention.
Example 1
As shown in fig. 3, the method for processing aluminum corrosion of the present embodiment includes:
s101, judging whether aluminum corrosion occurs on the target surface where the metal aluminum is located on the processed object, if so, executing a step S102;
the processed object includes, but is not limited to, a silicon wafer.
S102, immersing the target surface into an acidic corrosive liquid, and enabling the acidic corrosive liquid and the metal aluminum to perform an isotropic reaction so as to remove corrosive substances generated on the metal aluminum.
Wherein the corrosive substance is a mixture containing aluminum and halogen elements (such as fluorine, chlorine, etc.).
The acidic corrosive liquid comprises 65-85% of phosphoric acid, 5-15% of acetic acid, 1-5% of nitric acid, 1-3% of fluoroboric acid and 2-5% of water.
The chemical reaction time is 1-2 min, and the chemical reaction rate is
E.m.E.E./min
In terms of a/minute. Preferably, the chemical reaction rate is about
In terms of a/minute.
In addition, the length of the chemical reaction time is positively correlated with the thickness of the metal aluminum, and is also correlated with the process requirement, and if the requirement on the degree of corrosion of the metal aluminum is not high, the chemical reaction time can be flexibly controlled; if it is desired that the metallic aluminum is not corroded as much as possible, it is necessary to reduce the chemical reaction time as much as possible while cleaning the corrosive substances.
And S103, washing the target surface by using deionized water.
Specifically, 1) putting a silicon wafer into an etching solution tank, completely immersing the silicon wafer into an acidic etching solution, fully contacting and reacting metal aluminum and an etchant on the target surface of the silicon wafer with the acidic etching solution, and enabling the acidic etching solution and the metal aluminum to perform an isotropic reaction, wherein the chemical reaction time is controlled to be 1 minute, and the chemical reaction rate is 1 minute
The generated corrosive substances on the surface of the aluminum strip or on the side wall of the aluminum strip can be effectively removed by consuming the aluminum in the/minute mode, so that the continuous deterioration caused by the continuous reaction of fluorine, chlorine and the like with the aluminum is avoided. 2) And (3) putting the reacted silicon wafer into a deionized water tank, washing the surface where the metal aluminum is positioned by using deionized water, setting the washing time of the equipment to be 1 minute each time, and setting the washing times to be 10 times, wherein the water flow strength can be specifically set according to the working characteristics of the equipment, thereby completing the whole treatment process. Wherein, the flushing time and the flushing frequency can be adjusted and set according to the actual situation.
FIG. 4 shows the surface condition of the silicon wafer after the removal of the corrosive substance B in FIG. 1; as shown in fig. 5, the condition of the silicon wafer surface after the etchant B in fig. 2 is removed is shown, that is, the etchant in the silicon wafer surface is completely removed by the processing method of this embodiment, so as to effectively inhibit the metal aluminum from being further corroded. Wherein the scales in fig. 1, 2, 4 and 5 are all 1 um.
In the embodiment, whether the surface of the metal aluminum on the silicon wafer is subjected to aluminum corrosion can be automatically, timely and accurately determined, namely, the corrosion phenomenon can be found at the initial stage of aluminum corrosion, and then the silicon wafer subjected to aluminum corrosion is immersed in the acidic corrosive liquid for corrosion treatment, so that the mixture of aluminum and halogen elements is rapidly removed, namely, the metal aluminum is prevented from being further corroded through simple and effective wet treatment, continuous reaction between the halogen elements and aluminum is avoided, and continuous deterioration is avoided, thereby effectively ensuring the reliability of the product.
Example 2
The aluminum corrosion treatment method of the embodiment is a further improvement of the embodiment 1, and specifically comprises the following steps:
as shown in fig. 6, step S101 includes:
s1011, scanning the surface of the target by adopting scanning equipment and acquiring a target image;
s1012, judging whether the target image is consistent with the sample image, and if so, determining that the target surface is not subjected to aluminum corrosion; otherwise, determining that aluminum corrosion occurs on the target surface. Or the like, or, alternatively,
as shown in fig. 7, step S101 includes:
s1013, irradiating the target surface by at least one light beam with a set incident angle and acquiring a reflection angle of a corresponding reflected light beam;
s1014, judging whether the reflection angle is equal to the set incidence angle or not, and if so, determining that no aluminum corrosion occurs on the target surface; otherwise, determining that aluminum corrosion occurs on the target surface; or the like, or, alternatively,
as shown in fig. 8, when the light beams with a plurality of set incidence angles are applied to the target surface, step S1013 is followed by:
s1015, acquiring a first number of reflected light beams with the same reflection angle;
s1016, calculating the ratio of the first number to the total number of the light beams with the set incidence angle;
s1017, judging whether the ratio exceeds a set threshold value or not, and if so, determining that the target surface is not subjected to aluminum corrosion; otherwise, determining that aluminum corrosion occurs on the target surface. Or the like, or, alternatively,
as shown in fig. 9, step S101 includes:
s1018, emitting incident light with a set wavelength to the surface of a target by adopting fluorescence analysis equipment and acquiring a corresponding fluorescence image;
s1019, analyzing the fluorescence image, judging whether halogen elements exist, and if yes, determining that aluminum corrosion occurs on the surface of the target; otherwise, the target surface is determined to have not been corroded by aluminum.
As shown in fig. 10, the horizontal axis represents the characteristic energy of an element, the unit keV, and the vertical axis represents the relative reference value of the element at a constant voltage in an SEM electron microscope (scanning electron microscope). Wherein C, D and E are both expressed as chlorine (corresponding to different energy levels), F is oxygen, which is an interfering element, and G is aluminum, which indicates aluminum corrosion on the target surface of the silicon wafer.
After the aluminum corrosion on the silicon wafer is treated by the treatment method of the embodiment, as shown in fig. 11, H in the figure represents an aluminum element, that is, at this time, no aluminum corrosion occurs on the target surface of the silicon wafer, all generated corrosion products are completely treated, and only the aluminum element remains, so that continuous deterioration due to continuous reaction of aluminum and halogen elements with aluminum is inhibited, and the effectiveness of the treatment method of wet etching of the embodiment is also verified.
In addition, in the embodiment, two analysis methods of image comparison and fluorescence analysis can be combined to improve the accuracy of judging whether the surface of the metal aluminum on the silicon chip is subjected to aluminum corrosion.
In the embodiment, whether the surface of the metal aluminum on the silicon chip is corroded by the aluminum can be automatically, timely and accurately determined through image comparison and/or fluorescence analysis, namely, the corrosion phenomenon can be found at the initial stage of the aluminum corrosion, so that the silicon chip subjected to the aluminum corrosion is immersed in the acidic corrosion liquid for corrosion treatment, the mixture of the aluminum and the halogen element is rapidly removed, namely, the metal aluminum is prevented from being further corroded through simple and effective wet treatment, continuous reaction between the halogen element and the aluminum is avoided, and continuous deterioration is avoided, thereby effectively ensuring the reliability of the product.
Example 3
As shown in fig. 12, the aluminum etching processing system of the present embodiment includes a determination module 1, a processing module 2, and a flushing module 3.
The judging module 1 is used for judging whether aluminum corrosion occurs on the target surface where the metal aluminum is located on the processed object, and if so, the processing module 2 is called.
The processed object includes, but is not limited to, a silicon wafer.
The processing module 2 is used for immersing the target surface into the acidic corrosive liquid, so that the acidic corrosive liquid and the metal aluminum generate an isotropic reaction to remove corrosive substances generated on the metal aluminum.
Wherein the corrosive substance is a mixture containing aluminum and halogen elements.
The acidic corrosive liquid comprises 65-85% of phosphoric acid, 5-15% of acetic acid, 1-5% of nitric acid, 1-3% of fluoroboric acid and 2-5% of water.
The chemical reaction time is 1-2 min, and the chemical reaction rate is
E.m.E.E./min
In terms of a/minute. Preferably, the chemical reaction rate is about
In terms of a/minute.
In addition, the length of the chemical reaction time is positively correlated with the thickness of the metal aluminum, and is also correlated with the process requirement, and if the requirement on the degree of corrosion of the metal aluminum is not high, the chemical reaction time can be flexibly controlled; if it is desired that the metallic aluminum is not corroded as much as possible, it is necessary to reduce the chemical reaction time as much as possible while cleaning the corrosive substances. The rinse module 3 is used to rinse the target surface with deionized water.
Specifically, 1) putting a silicon wafer into an etching solution tank, completely immersing the silicon wafer into an acidic etching solution, fully contacting and reacting metal aluminum and an etchant on the target surface of the silicon wafer with the acidic etching solution, and enabling the acidic etching solution and the metal aluminum to perform an isotropic reaction, wherein the chemical reaction time is controlled to be 1 minute, and the chemical reaction rate is 1 minute
The generated corrosive substances on the surface of the aluminum strip or on the side wall of the aluminum strip can be effectively removed by consuming the aluminum in the/minute mode, so that the continuous deterioration caused by the continuous reaction of fluorine, chlorine and the like with the aluminum is avoided. 2) Placing the reacted silicon wafer into a deionized water tank, washing the surface of the metal aluminum by using deionized water, and setting the washing time of the equipment to be 1 minute each timeAnd the washing times are 10 times, and the water flow strength can be specifically set according to the working characteristics of equipment, so that the whole treatment process is completed. Wherein, the flushing time and the flushing frequency can be adjusted and set according to the actual situation.
FIG. 4 shows the surface condition of the silicon wafer after the removal of the etchant in FIG. 1; as shown in fig. 5, the situation after the corrosion in fig. 2 is removed is shown, that is, the corrosion in the silicon wafer surface is completely removed by the processing method of this embodiment, so as to effectively inhibit the metal aluminum from continuing to corrode. Wherein the scales in fig. 1, 2, 4 and 5 are all 1 um.
In the embodiment, whether the surface of the metal aluminum on the silicon wafer is subjected to aluminum corrosion can be automatically, timely and accurately determined, namely, the corrosion phenomenon can be found at the initial stage of aluminum corrosion, and then the silicon wafer subjected to aluminum corrosion is immersed in the acidic corrosive liquid for corrosion treatment, so that the mixture of aluminum and halogen elements is rapidly removed, namely, the metal aluminum is prevented from being further corroded through simple and effective wet treatment, continuous reaction between the halogen elements and aluminum is avoided, and continuous deterioration is avoided, thereby effectively ensuring the reliability of the product.
Example 4
The aluminum corrosion treatment system of the embodiment is a further improvement of the embodiment 3, and specifically:
as shown in fig. 13, the judging module 1 includes a target image unit 4 and a first judging unit 5;
the target image unit 4 is used for scanning the target surface by adopting a scanning device and acquiring a target image;
the first judging unit 5 is used for judging whether the target image is consistent with the sample image, and if so, determining that the target surface is not subjected to aluminum corrosion; otherwise, determining that aluminum corrosion occurs on the target surface. Or the like, or, alternatively,
as shown in fig. 14, the determination module 1 includes a reflection angle acquisition unit 6 and a second determination unit 7.
The reflection angle acquisition unit 6 is used for adopting at least one light beam with a set incidence angle to irradiate the target surface and acquiring the reflection angle of the corresponding reflected light beam;
the second judging unit 7 is used for judging whether the reflection angle is equal to the set incidence angle or not, and if so, determining that the target surface is not subjected to aluminum corrosion; otherwise, determining that aluminum corrosion occurs on the target surface. Or the like, or, alternatively,
as shown in fig. 15, when a plurality of light beams of set incident angles are irradiated to a target surface, the determination module 1 includes a number acquisition unit 8, a ratio calculation unit 9, and a third determination unit 10.
The number acquisition unit 8 is used for acquiring a first number of reflected light beams with the same reflection angle;
the ratio calculation unit 9 is used for calculating the ratio of the first number to the total number of the light beams with the set incidence angle;
the third judging unit 10 is used for judging whether the ratio exceeds a set threshold value, and if the ratio exceeds the set threshold value, determining that the target surface is not subjected to aluminum corrosion; otherwise, determining that aluminum corrosion occurs on the target surface. Or the like, or, alternatively,
as shown in fig. 16, the determination module 1 includes a fluorescence image acquisition unit 11 and a fourth determination unit 12;
the fluorescence image acquisition unit 11 is configured to emit incident light with a set wavelength to a target surface by using a fluorescence analysis device and acquire a corresponding fluorescence image;
the fourth judging unit 12 is configured to analyze the fluorescence image, judge whether a halogen element exists, and if yes, determine that aluminum corrosion occurs on the target surface; otherwise, the target surface is determined to have not been corroded by aluminum.
As shown in fig. 10, the horizontal axis represents the characteristic energy of an element, the unit keV, and the vertical axis represents the relative reference value of the element at a constant voltage in an SEM electron microscope (scanning electron microscope). Wherein C, D and E are both expressed as chlorine (corresponding to different energy levels), F is oxygen, which is an interfering element, and G is aluminum, which indicates aluminum corrosion on the target surface of the silicon wafer.
After the aluminum corrosion on the silicon wafer is treated by the treatment method of the embodiment, as shown in fig. 11, H in the figure represents an aluminum element, that is, at this time, no aluminum corrosion occurs on the target surface of the silicon wafer, all generated corrosion products are completely treated, and only the aluminum element remains, so that continuous deterioration due to continuous reaction of aluminum and halogen elements with aluminum is inhibited, and the effectiveness of the treatment method of wet etching of the embodiment is also verified.
In addition, in the embodiment, two analysis methods of image comparison and fluorescence analysis can be combined to improve the accuracy of judging whether the surface of the metal aluminum on the silicon chip is subjected to aluminum corrosion.
In the embodiment, whether the surface of the metal aluminum on the silicon chip is corroded by the aluminum can be automatically, timely and accurately determined through image comparison and/or fluorescence analysis, namely, the corrosion phenomenon can be found at the initial stage of the aluminum corrosion, so that the silicon chip subjected to the aluminum corrosion is immersed in the acidic corrosion liquid for corrosion treatment, the mixture of the aluminum and the halogen element is rapidly removed, namely, the metal aluminum is prevented from being further corroded through simple and effective wet treatment, continuous reaction between the halogen element and the aluminum is avoided, and continuous deterioration is avoided, thereby effectively ensuring the reliability of the product.
While specific embodiments of the invention have been described above, it will be appreciated by those skilled in the art that this is by way of example only, and that the scope of the invention is defined by the appended claims. Various changes and modifications to these embodiments may be made by those skilled in the art without departing from the spirit and scope of the invention, and these changes and modifications are within the scope of the invention.
Claims (14)
1. A method of treating aluminum corrosion, the method comprising:
s1, judging whether aluminum corrosion occurs on the target surface where the metal aluminum is positioned on the processed object, if so, executing a step S2;
s2, immersing the target surface into an acidic corrosive liquid to enable the acidic corrosive liquid and the metal aluminum to perform an isotropic reaction so as to remove corrosive generated on the metal aluminum.
2. The method for treating aluminum corrosion according to claim 1, further comprising, after step S2:
and S3, washing the target surface by using deionized water.
3. The method for treating aluminum corrosion according to claim 1, wherein step S1 includes:
s11, scanning the surface of the target by adopting scanning equipment and acquiring a target image;
s12, judging whether the target image is consistent with the sample image, and if so, determining that the target surface is not subjected to aluminum corrosion; otherwise, determining that the target surface is subjected to aluminum corrosion.
4. The method for treating aluminum corrosion according to claim 1, wherein step S1 includes:
s13, adopting at least one light beam with a set incident angle to irradiate the target surface and acquiring a reflection angle of a corresponding reflected light beam;
s14, judging whether the reflection angle is equal to the set incidence angle or not, and if so, determining that the target surface is not subjected to aluminum corrosion; otherwise, determining that the target surface is subjected to aluminum corrosion; or the like, or, alternatively,
when the light beams with a plurality of set incidence angles are irradiated to the target surface, step S13 is followed by:
s15, acquiring a first number of the reflected light beams with the same reflection angle;
s16, calculating the ratio of the first quantity to the total quantity of the light beams with the set incidence angle;
s17, judging whether the ratio exceeds a set threshold value or not, and if so, determining that the target surface is not subjected to aluminum corrosion; otherwise, determining that the target surface is subjected to aluminum corrosion.
5. The method of claim 1, wherein the corrosive substance is a mixture comprising aluminum and a halogen element;
step S1 includes:
s18, emitting incident light with a set wavelength to the surface of the target by adopting fluorescence analysis equipment and acquiring a corresponding fluorescence image;
s19, analyzing the fluorescence image, judging whether halogen elements exist or not, and if yes, determining that the target surface is subjected to aluminum corrosion; otherwise, determining that no aluminum corrosion occurs on the target surface.
6. The method for treating aluminum corrosion according to claim 1, wherein the acidic etching solution comprises 65-85% phosphoric acid, 5-15% acetic acid, 1-5% nitric acid, 1-3% fluoroboric acid and 2-5% water.
7. The method of claim 1, wherein the chemical reaction time in step S2 is 1-2 minutes, and the chemical reaction rate is
And/or the presence of a gas in the gas,
the processed object includes a silicon wafer.
8. The aluminum corrosion treatment system is characterized by comprising a judgment module and a treatment module;
the judging module is used for judging whether aluminum corrosion occurs on the target surface where the metal aluminum is positioned on the processed object, and if so, the processing module is called;
the processing module is used for immersing the target surface into an acidic corrosive liquid to enable the acidic corrosive liquid and the metal aluminum to perform an isotropic reaction so as to remove corrosive substances generated on the metal aluminum.
9. The aluminum corroding treatment system of claim 8 further comprising a rinse module;
the rinsing module is used for rinsing the target surface with deionized water.
10. The aluminum-corrosion processing system of claim 8, wherein the judging module comprises a target image unit and a first judging unit;
the target image unit is used for scanning the target surface by adopting scanning equipment and acquiring a target image;
the first judging unit is used for judging whether the target image is consistent with the sample image or not, and if so, determining that the target surface is not subjected to aluminum corrosion; otherwise, determining that the target surface is subjected to aluminum corrosion.
11. The aluminum corrosion processing system of claim 8, wherein the determining module comprises a reflection angle obtaining unit and a second determining unit;
the reflection angle acquisition unit is used for adopting at least one light beam with a set incidence angle to irradiate the target surface and acquiring the reflection angle of the corresponding reflected light beam;
the second judging unit is used for judging whether the reflection angle is equal to the set incidence angle or not, and if so, determining that the target surface is not subjected to aluminum corrosion; otherwise, determining that the target surface is subjected to aluminum corrosion; or the like, or, alternatively,
when a plurality of light beams with the set incidence angles are irradiated to the target surface, the judging module comprises a quantity obtaining unit, a ratio calculating unit and a third judging unit;
the quantity acquiring unit is used for acquiring a first quantity of the reflected light beams with the same reflection angle;
the ratio calculation unit is used for calculating the ratio of the first number to the total number of the light beams with the set incidence angle;
the third judging unit is used for judging whether the ratio exceeds a set threshold value or not, and if so, determining that the target surface is not subjected to aluminum corrosion; otherwise, determining that the target surface is subjected to aluminum corrosion.
12. The aluminum-corroding treatment system of claim 8, wherein the corrosive is a mixture comprising aluminum and a halogen element;
the judgment module comprises a fluorescence image acquisition unit and a fourth judgment unit;
the fluorescence image acquisition unit is used for emitting incident light with a set wavelength to the target surface by adopting fluorescence analysis equipment and acquiring a corresponding fluorescence image;
the fourth judging unit is used for analyzing the fluorescence image, judging whether halogen elements exist or not, and if yes, determining that the target surface is subjected to aluminum corrosion; otherwise, determining that no aluminum corrosion occurs on the target surface.
13. The aluminum-corroding treatment system of claim 8, wherein the acidic corrosive liquid comprises 65% to 85% phosphoric acid, 5% to 15% acetic acid, 1% to 5% nitric acid, 1% to 3% fluoroboric acid, and 2% to 5% water.
14. The aluminum etching treatment system of claim 8, wherein the chemical reaction time for removing the etchant in the treatment module is 1-2 minutes, and the chemical reaction rate is
And/or the presence of a gas in the gas,
the processed object includes a silicon wafer.
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