CN101914769A - Wafer aluminum corrosion method - Google Patents
Wafer aluminum corrosion method Download PDFInfo
- Publication number
- CN101914769A CN101914769A CN 201010253477 CN201010253477A CN101914769A CN 101914769 A CN101914769 A CN 101914769A CN 201010253477 CN201010253477 CN 201010253477 CN 201010253477 A CN201010253477 A CN 201010253477A CN 101914769 A CN101914769 A CN 101914769A
- Authority
- CN
- China
- Prior art keywords
- disk
- wafer
- corrosive fluid
- aluminum corrosion
- corrosion method
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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- Weting (AREA)
- Drying Of Semiconductors (AREA)
- ing And Chemical Polishing (AREA)
Abstract
The invention discloses a wafer aluminum corrosion method, which comprises: keeping the temperature of corroding liquid between 50 and 54 DEG C by using a heating wire; placing the wafer in the corroding liquid to corrode the wafer for 6 to 10 minutes; and drying the wafer. The corroding liquid is HNO3/H3PO4/HAC, and the wafer is silicon chip obtained after Al evaporation. The method reduces corrosion time, improves production efficiency, reduces burrs of corroding lines and improves the activities of chemical reagents.
Description
Technical field
The present invention relates to a kind of aluminum corrosion method of disk.
Background technology
Existing corrosive fluid temperature is lower, causes disk corrosion efficiency ratio lower, if improve temperature, then produces excessive erosion, and qualification rate reduces again.
Summary of the invention
The present invention seeks to provide a kind of aluminum corrosion method of disk at the defective that prior art exists.
The present invention adopts following technical scheme for achieving the above object:
The aluminum corrosion method of disk of the present invention is characterized in that described method is as follows:
By heater strip the corrosive fluid temperature is controlled at 50～54 ℃, then disk is put into corrosive fluid internal corrosion 6～10 minutes, with the disk oven dry, wherein, described corrosive fluid is HNO at last
3/ H
3PO
4/ HAC, described disk are the silicon chip after the Al evaporation.
Preferably, the etching machine of described carrying corrosive fluid is rotary aluminium etching machine.
The present invention has reduced etching time, has improved production efficiency, and has reduced the burr of corrosion lines, has improved the activity of chemical reagent.
Embodiment
Embodiment 1:
The aluminum corrosion method of disk is characterized in that described method is as follows:
By heater strip the corrosive fluid temperature is controlled at 50 ℃, then disk is put into corrosive fluid internal corrosion 10 minutes, with the disk oven dry, wherein, described corrosive fluid is HNO at last
3/ H
3PO
4/ HAC, described disk are the silicon chip after the Al evaporation.
Embodiment 2:
By heater strip the corrosive fluid temperature is controlled at 54 ℃, then disk is put into corrosive fluid internal corrosion 6 minutes, with the disk oven dry, wherein, described corrosive fluid is HNO at last
3/ H
3PO
4/ HAC, described disk are the silicon chip after the Al evaporation.
The etching machine of described carrying corrosive fluid is rotary aluminium etching machine.
Claims (2)
1. the aluminum corrosion method of a disk is characterized in that described method is as follows:
By heater strip the corrosive fluid temperature is controlled at 50～54 ℃, then disk is put into corrosive fluid internal corrosion 6～10 minutes, with the disk oven dry, wherein, described corrosive fluid is HNO at last
3/ H
3PO
4/ HAC, described disk are the silicon chip after the Al evaporation.
2. the aluminum corrosion method of disk according to claim 1, the etching machine that it is characterized in that described carrying corrosive fluid is rotary aluminium etching machine.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010253477 CN101914769A (en) | 2010-08-13 | 2010-08-13 | Wafer aluminum corrosion method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010253477 CN101914769A (en) | 2010-08-13 | 2010-08-13 | Wafer aluminum corrosion method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101914769A true CN101914769A (en) | 2010-12-15 |
Family
ID=43322400
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201010253477 Pending CN101914769A (en) | 2010-08-13 | 2010-08-13 | Wafer aluminum corrosion method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101914769A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112864034A (en) * | 2019-11-27 | 2021-05-28 | 上海先进半导体制造有限公司 | Aluminum corrosion treatment method and system |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3715250A (en) * | 1971-03-29 | 1973-02-06 | Gen Instrument Corp | Aluminum etching solution |
| CN101717938A (en) * | 2009-11-10 | 2010-06-02 | 天津市环欧半导体材料技术有限公司 | Technique for etching silicon slice with acid |
-
2010
- 2010-08-13 CN CN 201010253477 patent/CN101914769A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3715250A (en) * | 1971-03-29 | 1973-02-06 | Gen Instrument Corp | Aluminum etching solution |
| CN101717938A (en) * | 2009-11-10 | 2010-06-02 | 天津市环欧半导体材料技术有限公司 | Technique for etching silicon slice with acid |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112864034A (en) * | 2019-11-27 | 2021-05-28 | 上海先进半导体制造有限公司 | Aluminum corrosion treatment method and system |
| CN112864034B (en) * | 2019-11-27 | 2023-09-01 | 上海先进半导体制造有限公司 | Aluminum corrosion treatment method and system |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Open date: 20101215 |