CN102039282A - A semi-conductor wafer cleaning method - Google Patents
A semi-conductor wafer cleaning method Download PDFInfo
- Publication number
- CN102039282A CN102039282A CN2009101976316A CN200910197631A CN102039282A CN 102039282 A CN102039282 A CN 102039282A CN 2009101976316 A CN2009101976316 A CN 2009101976316A CN 200910197631 A CN200910197631 A CN 200910197631A CN 102039282 A CN102039282 A CN 102039282A
- Authority
- CN
- China
- Prior art keywords
- wafer
- cleaning
- cleaning agent
- cleaning method
- semiconductor crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Landscapes
- Cleaning Or Drying Semiconductors (AREA)
Abstract
The invention provides a semi-conductor cleaning method which comprises at least the following steps: providing a wafer with etching residue; adopting to cleaning the said wafer by EKC solution to remove the etching residue on the said wafer; cleaning the said wafer by a cleaning agent which is keto compound without hydroxy to remove the residual EKC solution on the said wafer; removing the residual cleaning agent on the wafer surface. The present invention achieves advantages that the water content in the cleaning agent can be easily controlled which could reduce the possibility of defect generation on the semi-conductor wafer metal wire.
Description
[technical field]
The present invention relates to semiconductor cleaning technique field, particularly relate to a kind of cleaning method of semiconductor crystal wafer.
[background technology]
In integrated circuit technology, the purpose of cleaning wafer is compound (Polymer), metal impurities or the particulate that is attached to crystal column surface in order to remove.Usually use the compound of EKC solution removal crystal column surface, and then utilize isopropyl alcohol (IPA) to remove the EKC solution that remains in crystal column surface.In this course, the water content of EKC solution and IPA is all very important, and this is because in the semiconductor technology processing procedure more than 0.13 μ m technology, the Al/Cu metal wire is main interconnecting line, and too many water can cause some infringements to metal wire.
The main component of EKC solution is: (1) azanol (HDA); (2) 2-(2-amino ethoxy) ethanol (DGA); (3) catechol (Catechol); (4) water.
The molecular formula that is used for cleaning the IPA of EKC solution is (CH
3)
2CHOH can be any than dissolving each other with water.Under given conditions, following oxidation reaction and substitution reaction can take place in IPA:
2(CH
3)
2CHOH+O
2→2(CH
3)
2C＝O+2H
2O
(CH
3)
2CHOH+HX→(CH
3)
2CHX+H
2O
In above two kinds of reactions, the generation of water is all arranged, and mentioned before, if the content of water is too high in the solution, be disadvantageous to metal wire, be easy to take place the galvanic cell reaction and cause the defective of metal wire.For example, in the Al processing procedure, because Al can form a kind of Al with Cu
2The Cu alloy phase in the time of in immersing water, will produce following galvanic cell reaction:
Negative electrode: Al
2Cu θ phase
Anode: Cu deposition, Al
Al→Al
3++3e
-
This galvanic cell reaction has caused the ionization of Al, that is to say that cavity blemish will take place exposed Al line.
[summary of the invention]
The objective of the invention is to solve the above-mentioned problems in the prior art, a kind of cleaning method of semiconductor crystal wafer is provided, prevent metal wire generation galvanic cell reaction exposed on the wafer, thereby improve the production efficiency and the yield rate of wafer.
According to above-mentioned purpose of the present invention, the present invention proposes a kind of cleaning method of semiconductor crystal wafer, and this method comprises following steps at least:
One wafer is provided, has etch residue on the described wafer;
Adopt EKC solution to clean described wafer, remove the etch residue on the described wafer;
Adopt a cleaning agent to clean described wafer, remove EKC solution residual on the described wafer, described cleaning agent is keto compounds and does not contain hydroxyl;
Remove the residual cleaning agent of crystal column surface.
Wherein, described cleaning agent is selected from one or both in acetone and the butanone.
In the step of described employing EKC solution cleaning wafer, the time of implementing to clean is 20 to 30 minutes.
In the step of described employing cleaning agent cleaning wafer, the time of implementing to clean is 5 to 10 minutes.
The step of the cleaning agent that described removal crystal column surface is residual further comprises: described wafer is moved in fast row's flushed channel, adopt deionized water that described wafer is washed.
The time that described employing deionized water washes wafer is 5 to 10 minutes.
Adopt cleaning agent to replace IPA to come the advantage of the residual liquid of EKC on the cleaning wafer to be among the present invention; because there is not the existence of hydroxyl in this cleaning agent; therefore the oxidation or the substitution reaction of alcohols can not take place in cleaning process; so the water content in the solution can not change because of the reaction of cleaning agent self; in the wafer cleaning, can control the content of water fully, thereby metal wire has been carried out effective protection.
[description of drawings]
Fig. 1 is the process chart of the cleaning method of semiconductor crystal wafer of the present invention.
[specific embodiment]
For purpose of the present invention, feature and advantage can be become apparent, a preferred embodiment cited below particularly, and cooperate appended diagram, be described below in detail.
As shown in Figure 1, be the process chart of the cleaning method of semiconductor crystal wafer of the present invention, the present invention comprises following steps: step S10, a wafer is provided, and have etch residue on the described wafer; Step S20 adopts EKC solution to clean described wafer, removes the etch residue on the described wafer; Step S30 adopts a cleaning agent to clean described wafer, removes EKC solution residual on the described wafer, and described cleaning agent is keto compounds and does not contain hydroxyl; Step S40 removes the residual cleaning agent of crystal column surface.Particularly:
One wafer is provided in step S10, has etch residue on the described wafer; Residue after these etchings might be the polymer that is used for protective side wall that forms in etching process in order to form good etching pattern in the etching technics, and these polymer need be got rid of by wet-cleaning in the etching back that finish; In addition, the residue after the etching also might comprise the clean photoresist of not removing that remains in behind the dry method stripping photoresist on the wafer, and these residual photoresists need wet processing to clean equally.
In step S20, adopt EKC solution to clean described wafer, remove the etch residue on the described wafer; Wherein, so-called EKC solution is a kind of common solution that is used for cleaning hangover on wafer surface, and main component comprises azanol, 2-(2-amino ethoxy) ethanol, catechol and water.Azanol (HDA) is used for decomposing copolymer, and metal is had corrosiveness; 2-(2-amino ethoxy) ethanol is used for decomposing copolymer equally, and metal is had corrosiveness; Catechol can combine and rest on metallic surface with metal, thereby the protection metal is not by azanol, diglycolamine erosions such as (DGA); In addition, also need water as activator in the EKC solution.As the preferable specific embodiment, adopt the step of EKC solution cleaning wafer to carry out 20～30 minutes.
After the etch residue on the wafer is removed, carry out step S30, promptly adopt a cleaning agent to clean described wafer, remove EKC solution residual on the described wafer, described cleaning agent is keto compounds and does not contain hydroxyl.In this specific embodiment, utilize acetone (CH
3)
2The residual liquid of EKC on the C=O cleaning wafer, has carbonyl in the acetone, can dissolve materials such as azanol in the EKC solution, 2-(2-amino ethoxy) ethanol, catechol, therefore the residual liquid of the EKC of crystal column surface can be removed, and owing to do not have hydroxyl in the acetone, have only carbonyl to exist, therefore the oxidation or the substitution reaction of alcohols can not take place, therefore can not make that the content of water changes in the middle of the solution owing to acetone participates in reaction.Therefore, in this step, the content of water is control easily, is difficult for causing because of the variation of water content the metal wire generation cavity blemish of wafer.As the preferable specific embodiment, this step time of carrying out is 5～10 minutes.
Say further, this step should adopt and contain ketone group but the cleaning agent that does not contain hydroxyl cleans described wafer, though ketone group and hydroxyl can both dissolve materials such as azanol in the EKC solution, 2-(2-amino ethoxy) ethanol, catechol, but hydroxyl easily absorbs airborne oxygen produces water, therefore should adopt and contain ketone group but the material that does not contain hydroxyl, for example acetone or butanone etc. are as the main component of cleaning agent.
Certainly, other ketone organic matters such as diacetyl or cyclohexanedione also can be used as the active ingredient of cleaning agent, but acetone and butanone are comparatively common materials, are easy to obtain.
After this, in step S40, remove the residual cleaning agent of crystal column surface.Particularly, wafer is moved in fast row's flushed channel (QDR), described wafer is carried out a rinsing step, can adopt pure water or deionized water that described wafer is washed in this step, the time of carrying out is 5～10 minutes.
This shows, adopt semiconductor crystal wafer cleaning method of the present invention that the residual liquid of EKC on the wafer is cleaned, be easy to control the water content in the cleaning fluid, overcome the weak point of available technology adopting isopropyl alcohol cleaning technique, thereby reduced the possibility of metal wire generation defective.
The above only is a preferred implementation of the present invention; should be pointed out that for those skilled in the art, without departing from the inventive concept of the premise; can also make some improvements and modifications, these improvements and modifications also should be considered within the scope of protection of the present invention.
Claims (6)
1. the cleaning method of a semiconductor crystal wafer is characterized in that, this method comprises following steps at least:
One wafer is provided, has etch residue on the described wafer;
Adopt EKC solution to clean described wafer, remove the etch residue on the described wafer;
Adopt a cleaning agent to clean described wafer, remove EKC solution residual on the described wafer, described cleaning agent is keto compounds and does not contain hydroxyl;
Remove the residual cleaning agent of crystal column surface.
2. the cleaning method of semiconductor crystal wafer according to claim 1 is characterized in that, described cleaning agent is selected from one or both in acetone and the butanone.
3. the cleaning method of semiconductor crystal wafer according to claim 1 and 2 is characterized in that, in the step of described employing EKC solution cleaning wafer, the time of implementing to clean is 20 to 30 minutes.
4. the cleaning method of semiconductor crystal wafer according to claim 1 and 2 is characterized in that, in the step of described employing cleaning agent cleaning wafer, the time of implementing to clean is 5 to 10 minutes.
5. the cleaning method of semiconductor crystal wafer according to claim 1 and 2, it is characterized in that, the step of the cleaning agent that described removal crystal column surface is residual further comprises: described wafer is moved in fast row's flushed channel, adopt deionized water that described wafer is washed.
6. the cleaning method of semiconductor crystal wafer according to claim 5 is characterized in that, the time that described employing deionized water washes wafer is 5 to 10 minutes.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009101976316A CN102039282A (en) | 2009-10-23 | 2009-10-23 | A semi-conductor wafer cleaning method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009101976316A CN102039282A (en) | 2009-10-23 | 2009-10-23 | A semi-conductor wafer cleaning method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102039282A true CN102039282A (en) | 2011-05-04 |
Family
ID=43906006
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2009101976316A Pending CN102039282A (en) | 2009-10-23 | 2009-10-23 | A semi-conductor wafer cleaning method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102039282A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109326501A (en) * | 2017-07-31 | 2019-02-12 | 上海新昇半导体科技有限公司 | A kind of semiconductor crystal wafer finally polish after cleaning method |
| CN112320753A (en) * | 2020-10-29 | 2021-02-05 | 武汉高芯科技有限公司 | MEMS wafer cleaning method |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1929085A (en) * | 2005-09-08 | 2007-03-14 | 联华电子股份有限公司 | Wafer protection system for wafer cleaning device and wafer cleaning process |
| CN101561641A (en) * | 2008-04-14 | 2009-10-21 | 安集微电子（上海）有限公司 | Plasma etching residual washing liquid |
-
2009
- 2009-10-23 CN CN2009101976316A patent/CN102039282A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1929085A (en) * | 2005-09-08 | 2007-03-14 | 联华电子股份有限公司 | Wafer protection system for wafer cleaning device and wafer cleaning process |
| CN101561641A (en) * | 2008-04-14 | 2009-10-21 | 安集微电子（上海）有限公司 | Plasma etching residual washing liquid |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109326501A (en) * | 2017-07-31 | 2019-02-12 | 上海新昇半导体科技有限公司 | A kind of semiconductor crystal wafer finally polish after cleaning method |
| CN109326501B (en) * | 2017-07-31 | 2021-06-22 | 上海新昇半导体科技有限公司 | Cleaning method for semiconductor wafer after final polishing |
| CN112320753A (en) * | 2020-10-29 | 2021-02-05 | 武汉高芯科技有限公司 | MEMS wafer cleaning method |
| CN112320753B (en) * | 2020-10-29 | 2024-04-26 | 武汉高芯科技有限公司 | MEMS wafer cleaning method |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102473638B (en) | Post ion implant stripper for advanced semiconductor application | |
| EP2098911B1 (en) | Stripper for dry film removal and method using the same | |
| US6531436B1 (en) | Polymer removal | |
| CN101971103B (en) | Cleaning composition for removing resist | |
| CN107085358A (en) | For removing the photoresist lift off liquid containing back chip metalization layer | |
| CN102124414B (en) | Photoresist remover composition and method for removing photoresist | |
| US6274296B1 (en) | Stripper pretreatment | |
| JP2005142559A (en) | Cleaning liquid of integrated circuit device, and cleaning method using cleaning liquid | |
| TW200617623A (en) | Composition for removing a photoresist residue and polymer residue, and residue removal process using same | |
| JP2009543344A (en) | Post-etch wafer surface cleaning with liquid meniscus | |
| JP5885046B1 (en) | Resist stripper | |
| JPH09283507A (en) | Photoresist exfoliation agent and manufacture of semiconductor integrated circuit | |
| JP2009081247A (en) | Method of etching ruthenium film | |
| CN102346383B (en) | A kind of cleaning fluid of photoresist | |
| CN105807577A (en) | Cleaning solution for photoresist residues | |
| JP2016095413A (en) | Resist removal liquid | |
| CN102039282A (en) | A semi-conductor wafer cleaning method | |
| CN101968610A (en) | Method for removing optical resist after all-wet etching process | |
| CN104570629A (en) | liquid crystal panel copper film light-blocking aqueous stripping liquid | |
| CN102566332A (en) | Thick film photoresist cleaning solution | |
| US20040229762A1 (en) | Polymer remover | |
| TW200304586A (en) | Composite for stripping photoresist and the manufacturing method of semiconductor device using the same | |
| CN101266914B (en) | Humid cleaning technology and method for making semiconductor component using this cleaning technology | |
| CN102034680A (en) | Drying method of wafer | |
| CN102427020A (en) | Wafer cleaning method capable of effectively reducing water mark defect |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| ASS | Succession or assignment of patent right |
Free format text: FORMER OWNER: WUXI HUARUN SHANGHUA TECHNOLOGY CO., LTD. Effective date: 20120312 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 214061 WUXI, JIANGSU PROVINCE TO: 214028 WUXI, JIANGSU PROVINCE |
|
| TA01 | Transfer of patent application right |
Effective date of registration: 20120312 Address after: 214028 Wuxi provincial high tech Industrial Development Zone, Hanjiang Road, No. 5, Jiangsu, China Applicant after: Wuxi CSMC Semiconductor Co., Ltd. Address before: 214061 No. 5 Hanjiang Road, national hi tech Industrial Development Zone, Wuxi, Jiangsu, China Applicant before: Wuxi CSMC Semiconductor Co., Ltd. Co-applicant before: Wuxi Huarun Shanghua Technology Co., Ltd. |
|
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20110504 |