CN1451491A - Method and device for cleaning LCD using plasma - Google Patents
Method and device for cleaning LCD using plasma Download PDFInfo
- Publication number
- CN1451491A CN1451491A CN03122205A CN03122205A CN1451491A CN 1451491 A CN1451491 A CN 1451491A CN 03122205 A CN03122205 A CN 03122205A CN 03122205 A CN03122205 A CN 03122205A CN 1451491 A CN1451491 A CN 1451491A
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- lcd
- film transistor
- thin film
- plasma treatment
- liquid
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- 238000004140 cleaning Methods 0.000 title claims abstract description 69
- 238000000034 method Methods 0.000 title claims abstract description 28
- 239000007788 liquid Substances 0.000 claims abstract description 34
- 238000005530 etching Methods 0.000 claims abstract description 6
- 238000005507 spraying Methods 0.000 claims abstract description 6
- 239000010409 thin film Substances 0.000 claims description 87
- 238000009832 plasma treatment Methods 0.000 claims description 50
- 238000001035 drying Methods 0.000 claims description 8
- 239000010408 film Substances 0.000 claims description 6
- 239000004973 liquid crystal related substance Substances 0.000 claims description 6
- 238000000678 plasma activation Methods 0.000 claims description 2
- 238000003491 array Methods 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 12
- 239000005416 organic matter Substances 0.000 description 8
- 239000000463 material Substances 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 5
- 230000000704 physical effect Effects 0.000 description 5
- 238000001994 activation Methods 0.000 description 3
- 230000004913 activation Effects 0.000 description 3
- 230000001680 brushing effect Effects 0.000 description 3
- 230000002285 radioactive effect Effects 0.000 description 3
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000006073 displacement reaction Methods 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical group O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 206010013786 Dry skin Diseases 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 208000002173 dizziness Diseases 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- NHDHVHZZCFYRSB-UHFFFAOYSA-N pyriproxyfen Chemical compound C=1C=CC=NC=1OC(C)COC(C=C1)=CC=C1OC1=CC=CC=C1 NHDHVHZZCFYRSB-UHFFFAOYSA-N 0.000 description 1
- 230000032258 transport Effects 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/1306—Details
- G02F1/1309—Repairing; Testing
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B11/00—Cleaning flexible or delicate articles by methods or apparatus specially adapted thereto
- B08B11/04—Cleaning flexible or delicate articles by methods or apparatus specially adapted thereto specially adapted for plate glass, e.g. prior to manufacture of windshields
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F26—DRYING
- F26B—DRYING SOLID MATERIALS OR OBJECTS BY REMOVING LIQUID THEREFROM
- F26B21/00—Arrangements or duct systems, e.g. in combination with pallet boxes, for supplying and controlling air or gases for drying solid materials or objects
- F26B21/004—Nozzle assemblies; Air knives; Air distributors; Blow boxes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/38—Exhausting, degassing, filling, or cleaning vessels
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/1316—Methods for cleaning the liquid crystal cells, or components thereof, during manufacture: Materials therefor
Abstract
A TFT-LCD cleaning method by using plasma and a device for fabricating a TFT-LCD are provided. The device includes a plasma processor or plurality of plasma processors that disposed in the front part of the device or disposed in the front part of the device and the rear part of a high flow rate sprayer for spraying cleaning liquid, etching liquid, divesting liquid or develop liquid. Because the structure of the device can execute multiple cleaning functions at the same time on one TFT-LCD, so it can effectively use manufacturing space and play maximum cleaning efficiency.
Description
Technical field
The invention relates to a kind of method and device of making LCD, and particularly relevant for a kind of method and apparatus that uses plasma with the effective cleaning LCD.
Background technology
Along with flat-panel screens, such as LCD, the integration of height, in order to control product yield and product quality, control pollutant and environmental pollution are considerable in the manufacture process of flat-panel screens.Therefore, in making the process of flat-panel screens, the cleaning that the material do not wanted on the flat-panel screens and particle are removed is necessary.
Fig. 1 is the known block diagram that is used to clean the device of flat-panel screens.As shown in Figure 1, the cleaning device of known flat-panel screens comprises an organic cleaner 10, a carrier 20 and a wet-cleaning device 30.Organic cleaner 10 can remove the material of not wanting on the flat-panel screens, or uses radioactive ray or ozone to change the state of waiting to remove material, so that it is easy to be removed, radioactive ray for example are Excimer UV light emission line, infrared light radioactive ray or the like.Carrier 20 can before take wet-cleaning device 30 to through the flat-panel screens of organic cleaner 10 cleanings.The material that wet-cleaning device 30 can not removed by organic cleaner 10 is removed fully.
As before described, known organic cleaner 10 and wet-cleaning device 30 are to operate in different devices.Because these cleaning devices all can link together with other device, therefore will need big regional space places a little cleaning devices.Moreover because cleaning device all need be placed in the big regional space, it is quite difficult therefore other device of these cleaning devices and subsequent technique will being linked together.At this, because of cleaning device is placed in the position inequality with other subsequent technique, the domination of material and displacement all will increase.In addition, because the increase of cleaning time, the productive rate of product will descend.In addition, flat-panel screens may be polluted between two cleaning procedures that separate once again.
Summary of the invention
Therefore purpose of the present invention just provides a kind of effectively method of cleaning film transistor liquid crystal display (TFT-LCD).
A further object of the present invention provides a kind of device of making Thin Film Transistor-LCD, but its effective cleaning Thin Film Transistor-LCD, and only need occupy little regional space, therefore the space of making can be effectively used.
According to purpose of the present invention, the present invention proposes a kind of method of cleaning film transistor liquid crystal display (TFT-LCD), and it comprises the following steps, a Thin Film Transistor-LCD is placed on the carrier; When Thin Film Transistor-LCD is positioned on the carrier and advances toward a direction, use the surface of plasma treatment Thin Film Transistor-LCD, be positioned at organic pollution on the Thin Film Transistor-LCD surface to remove, or the activation organic pollution is so that it is reactiveness; Spraying liquid is to Thin Film Transistor-LCD, to remove by the organic matter of plasma activation; And drying residues in the liquid on the Thin Film Transistor-LCD.
The method more comprises, after dry liquid, when Thin Film Transistor-LCD just continues to advance, use the surface of plasma treatment Thin Film Transistor-LCD, still remain in the lip-deep organic pollution of Thin Film Transistor-LCD or activate organic pollution so that it is reactiveness to remove.
According to another object of the present invention, the invention provides a kind of device of making Thin Film Transistor-LCD, it comprises a carrier, it is in order to place a Thin Film Transistor-LCD and Thin Film Transistor-LCD is advanced toward a direction; One plasma treatment device, it is in order to handle the surface of Thin Film Transistor-LCD, wherein this Thin Film Transistor-LCD is placed on the carrier and and advances, and the use plasma can remove the lip-deep organic pollution of Thin Film Transistor-LCD or the activation organic pollution is so that it is reactiveness; At least one high speed sprinkler is erected at plasma treatment device carrier top afterwards, and it is to use the mode of spraying liquid to remove the organic pollution that is activated by plasma treatment; And an air cutter, being erected at the carrier top after the plasma treatment device, it is to remain in liquid on the Thin Film Transistor-LCD in order to drying, and this Thin Film Transistor-LCD system is placed on carrier and is advancing.
This device more comprises an extra plasma treatment device, it is to be erected at air cutter carrier top afterwards, when Thin Film Transistor-LCD just continuing advance the time, just processing Thin Film Transistor-LCD that can be extra is to remove the organic pollution that still residues on the Thin Film Transistor-LCD or to activate organic pollution so that it is reactiveness.
According to the present invention,, therefore can increase the validity of cleaning because plasma is intended for a cleaning source.Moreover organic cleaning and wet-cleaning system carry out in the main or less important wheelbase of Thin Film Transistor-LCD simultaneously.Because the structure of this device can be carried out multiple cleaning function to single Thin Film Transistor-LCD therein simultaneously, so making space can effectively be used.
Description of drawings
Fig. 1 is the block diagram of the device of known cleaning flat-panel screens;
Fig. 2 is the flow chart according to the method for cleaning film transistor liquid crystal display (TFT-LCD) of the present invention;
Fig. 3 is the schematic representation of apparatus according to the manufacturing Thin Film Transistor-LCD of a preferred embodiment of the present invention; And
Fig. 4 is the schematic representation of apparatus according to the manufacturing Thin Film Transistor-LCD of another preferred embodiment of the present invention.
10: organic cleaner
20: carrier
30: the wet-cleaning device
50,55,60,65: step
100,200: device
120,120a, 120b: plasma treatment device
125a, 125b, 125c: pump unit
127: brushing tool
130a, 130b: high speed sprinkler
140: the air cutter
145: air curtain
The specific embodiment
Below will especially exemplified by a preferred embodiment and cooperate appended graphic, to describe the present invention in detail.The present invention may have the example of many different types, but the following example of lifting not is in order to limit the present invention.The exposure of following embodiment can make to be had the knack of this operator and can implement according to this.In icon, member will be by exaggerative so that it be comparatively clear.For the easier understanding of energy, will use the reference number of definition, and in icon, indicate member commonly used as much as possible.
Fig. 2 is the flow chart according to the method for cleaning film transistor liquid crystal display (TFT-LCD) of the present invention.This clean method is characterised in that the surface of using the plasma cleans Thin Film Transistor-LCD, to improve organic cleaning efficiency.
Please refer to Fig. 2, in step 50, is that a Thin Film Transistor-LCD is placed on the carrier.
Afterwards, in step 55, when Thin Film Transistor-LCD advances, use the surface of plasma treatment Thin Film Transistor-LCD on carrier and with a direction, it for example is to carry out in atmospheric pressure.Usually, remove the lip-deep organic matter of Thin Film Transistor-LCD and be suitable difficulty, this is because organic physical property and chemistry quite stable all.Yet, if Thin Film Transistor-LCD after going through isoionic processing, the organic matter of original stable state will be activated by isoionic ion energy, and made organic physical property and chemistry instability.Then, in the wet-cleaning step of follow-up use liquid, just can bring into play its maximum cleaning efficiency.
Afterwards, in step 60, when Thin Film Transistor-LCD continued to advance, liquid will be sprayed on the Thin Film Transistor-LCD.Because the sprinkling of liquid, the organic matter that is activated by plasma treatment step can be eliminated.And this liquid can be Clean-liquid, for example is deionized water or the liquid that is used for etching, divests or develops.
Afterwards, in step 65, when Thin Film Transistor-LCD continued to advance, the liquid that remains on the Thin Film Transistor-LCD will be dried.
After the step 65 of dry liquid, when Thin Film Transistor-LCD continued to advance, plasma treatment step was carried out on the surface to Thin Film Transistor-LCD that can be extra again.See through extra plasma treatment step, also remain in the lip-deep organic pollution of Thin Film Transistor-LCD and just can remove or it is activated and is reactiveness.And the organic matter of activation can see through follow-up step and remove it.
According to the above embodiments of the present invention, the surface of use plasma treatment Thin Film Transistor-LCD can make organic matter be activated and make its chemistry and physical property instability, therefore just can bring into play maximum cleaning efficiency in follow-up wet-cleaning step.
Fig. 3 is the schematic representation of apparatus according to the manufacturing Thin Film Transistor-LCD of a preferred embodiment of the present invention.The method that this embodiment carries out cleaning as described in Figure 2.
Please refer to Fig. 3, the device 100 of making Thin Film Transistor-LCD comprises a carrier 110 and a plasma treatment device 120, high speed sprinkler 130a and 130b, and an air cutter 140, and above-mentioned member is arranged in the top of carrier 110 in regular turn.
One Thin Film Transistor-LCD (not illustrating) is placed on the carrier 110 and with a direction and advances, and in Fig. 3, this direction is to represent with arrow A.And carrier 110 can be the carrier of known any kenel, for example is a roller kenel or air transports the carrier of kenel.As previously discussed, make Thin Film Transistor-LCD device structure can by carrier 110 moving forward of making that Thin Film Transistor-LCD continues and continue carry out processing step.
Plasma treatment device 120 is erected at the top of carrier 110, and it is to use the surface of plasma treatment Thin Film Transistor-LCD, and wherein Thin Film Transistor-LCD is by moving forward that carrier 110 continues.At this, can use several plasma treatment devices, for example two or more plasma treatment devices.Via plasma treatment step, may be able to remove the lip-deep organic pollution of Thin Film Transistor-LCD or activate organic pollution so that its physical property and chemistry are reactiveness.This plasma treatment device 120 can be the plasma apparatus that known any kenel is utilized traditional plasma production method, for example be in atmospheric pressure, to utilize plasma treatment device dizzy or dielectric discharge generation low-temperature plasma, or in being lower than atmospheric pressure, produce isoionic plasma treatment device.Moreover plasma source can be the RF generator of 13.56MHz frequency band or the electromagnet source of 2.45GHz frequency band.
High speed sprinkler 130a, 130b are erected at carrier 110 tops after the plasma treatment device 120, even in order to spraying liquid to being positioned on the just advancing Thin Film Transistor-LCD of carrier 120, in order to remove the organic matter that is activated by plasma treatment.If need, the number of high speed sprinkler can be adjusted.In addition, the liquid that is used for cleaning in the high speed sprinkler can be deionized water, etching solution, divest liquid or developer solution that the high speed sprinkler is double as one cleaning device, an Etaching device, a device for stripping or a developing apparatus simultaneously.In other words, high speed sprinkler 130a, 130b can be applied in other the technology, for example are etching or developing process, as long as it change liquid.Be used to prevent that the air curtain (not illustrating) that disturbs can be extra is placed between plasma treatment device 120 and the high speed sprinkler 130a.
Air cutter 140 is erected at carrier 110 tops after the high speed sprinkler 130b, and it remains in liquid on the Thin Film Transistor-LCD in order to drying, and wherein this Thin Film Transistor-LCD is arranged on the carrier 110 and is just advancing.To be prepared to follow-up technology through air cutter 140 dried Thin Film Transistor-LCDs.Air cutter 140 can be known a kind of air cutter.Though do not illustrate in Fig. 3, this air cutter system comprises an air intake of a side that is formed on a main body, through passing air into thus; One air outlet slit is so that the air that is flow to by air intake can flow out; And a slit adjuster, in order to adjust the size of air outlet slit.
Though pump unit 125a, 125b, 125c illustrate between the unit above-mentioned in Fig. 3, be used for preventing that the air curtain (not illustrating) that disturbs can be used for replacing pump unit, it is to need and decide.In addition, at this, high speed sprinkler 130a, 130b are as cleaning device, and in order to the sprinkling clean liquid, yet a brushing tool 127 can also be used in before the high speed sprinkler 130a, as shown in Figure 3.
In addition, though do not illustrate among Fig. 3, brushing tool, high speed sprinkler, air cutter or similar utensil can symmetrical top that is placed on Thin Film Transistor-LCD and belows.
In the manufacturing installation of Fig. 3, be placed on the carrier 110 and advancing Thin Film Transistor-LCD, plasma treatment device 120 will be handled its surface.After plasma treatment, will utilize the surface of the cleaning liquid Thin Film Transistor-LCD that high speed sprinkler 130a, 130b sprayed, and then utilize air cutter 140 dryings.Because in the cleaning of high speed sprinkler 130a, 130b and air cutter 140 and dry process, plasma treatment device 120 can continue carries out plasma treatment step, therefore can reach successional cleaning procedure.Meaning promptly when the Thin Film Transistor-LCD stage was in front cleaned and be dry, can carry out in the follow-up stage by plasma treatment.In other words, organic cleaning and wet-cleaning can be simultaneously the main shaft of Thin Film Transistor-LCD apart from or minor axis apart from carry out, because multiple cleaning function can be applied on the same Thin Film Transistor-LCD simultaneously, so the cleaning of Thin Film Transistor-LCD just can be carried out in the regional extent of minimum.
Fig. 4 is the schematic representation of apparatus according to the manufacturing Thin Film Transistor-LCD of another preferred embodiment of the present invention.Please refer to the device of Fig. 4, itself and Fig. 3 difference are that plasma treatment step will carry out once again after the drying steps of air cutter 140.
Please refer to Fig. 4, device 200 according to the manufacturing Thin Film Transistor-LCD of another preferred embodiment of the present invention comprises a carrier 110, one first plasma treatment device 120a, high speed sprinkler 130a, 130b, an air cutter 140 and one second plasma treatment device 120b, and it is the top that is arranged in carrier 110 in regular turn.
The device difference of the device of Fig. 4 and Fig. 3 is that the second plasma treatment device 120b is placed on the rear of air cutter 140.Because the surface of Thin Film Transistor-LCD will be handled by the second plasma treatment device 120b once more, what remain in still therefore that the lip-deep organic matter of Thin Film Transistor-LCD just can be more definite is removed or makes at least it to be reactiveness.In addition, in Fig. 4, preferably between the air cutter 140 and the second plasma treatment device 120b, provide an air curtain 145.
As mentioned above, according to the present invention, carry out because of organic cleaning and wet-cleaning tie up on the single line, therefore the distance that moves between two processing steps that separate just can reduce, and can be contemplated that the cost that can save distribution.In addition, the pollution problem between technique unit also can be avoided.Moreover because organic cleaning and wet-cleaning be incorporated in the single device, so making space just can effectively be utilized.In addition, by plasma treatment, can bring into play maximum cleaning efficiency.And the input that can continue is also handled Thin Film Transistor-LCD.And the high speed sprinkler can also be applied on other technology, for example is etch process or developing process, and can simply change the function of high speed sprinkler.
Method according to cleaning film transistor liquid crystal display (TFT-LCD) of the present invention, it is characterized in that, before the wet-cleaning step, use earlier the plasma treatment Thin Film Transistor-LCD, by isoionic ion energy so that organic chemistry and physical property are labile state.Therefore, in follow-up wet-cleaning step process, just can bring into play its maximum cleaning efficiency when utilizing cleaning liquid, and therefore can improve product yield.
According to the device of manufacturing Thin Film Transistor-LCD of the present invention, it is characterized in that having the plasma treatment device of placement, and it is placed in the single manufacturing installation, so that making space can be effectively used in order to organic cleaning.Because organic cleaning unit and wet-cleaning unit are not separately, and can ongoing operation, the displacement of material therefore can be reduced.Thus, device only need occupy the space that little spatial dimension is made with minimizing, but also maximum cleaning efficiency can be arranged.In addition, because multiple cleaning can be applied on the same Thin Film Transistor-LCD, so cleaning efficiency can effectively improve.
Because the device that is used for cleaning procedure can be arranged easily and link with other subsequent technique device, by the kinds of processes function, making firmly of technology can be improved, but also can control the substrate of multiple size easily, and it comprises with respect to the comparatively large-sized substrate of conventional apparatus.In addition, the present invention can also integrate cleaning procedure, uses the manufacturing cost that reduces Thin Film Transistor-LCD.
Claims (11)
1. the method for a cleaning film transistor liquid crystal display (TFT-LCD) is characterized in that, this method comprises:
One Thin Film Transistor-LCD is placed on the carrier;
When this Thin Film Transistor-LCD is positioned on this carrier and advances toward a direction, use the surface of this Thin Film Transistor-LCD of plasma treatment, be positioned at the lip-deep organic pollution of this Thin Film Transistor-LCD to remove, or activate this organic pollution so that it is reactiveness;
Spraying liquid is to this Thin Film Transistor-LCD, to remove by this organic pollution of plasma activation; And
Drying residues in the liquid on this Thin Film Transistor-LCD.
2. the method for claim 1, it is characterized in that, after dry this liquid, when this Thin Film Transistor-LCD is just continuing to advance, more comprise the surface of using this Thin Film Transistor-LCD of plasma treatment, removing, or activate this residual organic pollution so that it is reactiveness at the residual organic pollution of this Thin Film Transistor-LCD lip-deep.
3. as claim 1 or the 2nd described method, it is characterized in that this liquid is cleaning solution, etching solution, divest liquid or developer solution.
4. a device of making Thin Film Transistor-LCD is characterized in that, this device comprises:
One carrier, it is in order to place a Thin Film Transistor-LCD and this Thin Film Transistor-LCD is advanced toward a direction;
One plasma treatment device, it is in order to handle the surface of this Thin Film Transistor-LCD, wherein this Thin Film Transistor-LCD is placed on this carrier and in just advancing, uses plasma can remove a lip-deep organic pollution of this Thin Film Transistor-LCD or activate this organic pollution so that it is reactiveness;
At least one high speed sprinkler is erected at this plasma treatment device this carrier top afterwards, and its mode of using spraying liquid is to remove this organic pollution that is activated by plasma treatment; And
One air cutter is erected at this carrier top after this plasma treatment device, and it is to remain in a liquid on this Thin Film Transistor-LCD in order to drying, and this Thin Film Transistor-LCD is placed on this carrier and in just advancing.
5. device as claimed in claim 4, it is characterized in that, more comprise an extra plasma treatment device, be erected at this air cutter this carrier top afterwards, it removes the residual organic pollution of this Thin Film Transistor-LCD lip-deep in order to extra, or activates the organic pollution of this residual flow so that it is reactiveness.
6. device as claimed in claim 5 is characterized in that, more comprises the air curtain in order to prevent to disturb, and it is between this air cutter and this extra plasma treatment device.
7. device as claimed in claim 4 is characterized in that, more comprises the air curtain in order to prevent to disturb, and it is between this plasma treatment device and this high speed sprinkler.
8. device as claimed in claim 4 is characterized in that, two or more this plasma treatment device will be used.
9. device as claimed in claim 4 is characterized in that, this plasma treatment device is in atmospheric pressure or is lower than and produces plasma under the atmospheric pressure.
10. as arbitrary described device in the claim 4 to 9, it is characterized in that this high speed sprinkler and/or this air cutter are with respect to this Thin Film Transistor-LCD and symmetric arrays.
11. device as claimed in claim 10 is characterized in that, this liquid is cleaning solution, etching solution, divest liquid or developer solution.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR200221551 | 2002-04-19 | ||
| KR1020020021551A KR100608452B1 (en) | 2002-04-19 | 2002-04-19 | Cleaning method using plasma for manufacturing TFT-LCD and apparatus thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1451491A true CN1451491A (en) | 2003-10-29 |
| CN1233473C CN1233473C (en) | 2005-12-28 |
Family
ID=29244756
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB031222056A Expired - Lifetime CN1233473C (en) | 2002-04-19 | 2003-04-16 | Method and device for cleaning LCD using plasma |
Country Status (3)
| Country | Link |
|---|---|
| KR (1) | KR100608452B1 (en) |
| CN (1) | CN1233473C (en) |
| TW (1) | TW572798B (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104907288A (en) * | 2014-03-13 | 2015-09-16 | 东莞高伟光学电子有限公司 | Cleaning equipment and technique for cleaning electronic components |
| CN105057317A (en) * | 2015-09-02 | 2015-11-18 | 扬州宁达贵金属有限公司 | Method for splitting waste liquid crystal display |
| CN106992129A (en) * | 2016-01-20 | 2017-07-28 | 威海机械系统显示有限公司 | Equipment for handling substrate |
| CN109719087A (en) * | 2019-01-04 | 2019-05-07 | Oppo（重庆）智能科技有限公司 | Screen activation equipment |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100676601B1 (en) * | 2004-09-17 | 2007-01-30 | 주식회사 삼한텍 | The brush-roller for washing fpd |
| KR101635550B1 (en) * | 2016-01-20 | 2016-07-01 | 엠에스티코리아(주) | apparatus for treating substrate |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05166789A (en) * | 1991-12-12 | 1993-07-02 | Shimada Phys & Chem Ind Co Ltd | Cleaner/drier for substrate |
| JPH10209097A (en) * | 1997-01-21 | 1998-08-07 | Dainippon Screen Mfg Co Ltd | Substrate cleaning method and apparatus |
| JPH11333394A (en) * | 1998-05-27 | 1999-12-07 | Toray Ind Inc | Method for washing substrate and washing apparatus |
| JP2001314827A (en) * | 2000-05-10 | 2001-11-13 | Sharp Corp | Method and apparatus for cleaning substrate |
-
2002
- 2002-04-19 KR KR1020020021551A patent/KR100608452B1/en active IP Right Grant
-
2003
- 2003-04-07 TW TW92107853A patent/TW572798B/en not_active IP Right Cessation
- 2003-04-16 CN CNB031222056A patent/CN1233473C/en not_active Expired - Lifetime
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104907288A (en) * | 2014-03-13 | 2015-09-16 | 东莞高伟光学电子有限公司 | Cleaning equipment and technique for cleaning electronic components |
| CN105057317A (en) * | 2015-09-02 | 2015-11-18 | 扬州宁达贵金属有限公司 | Method for splitting waste liquid crystal display |
| CN106992129A (en) * | 2016-01-20 | 2017-07-28 | 威海机械系统显示有限公司 | Equipment for handling substrate |
| CN109719087A (en) * | 2019-01-04 | 2019-05-07 | Oppo（重庆）智能科技有限公司 | Screen activation equipment |
| CN109719087B (en) * | 2019-01-04 | 2021-06-18 | Oppo（重庆）智能科技有限公司 | Screen activating device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1233473C (en) | 2005-12-28 |
| KR20030083129A (en) | 2003-10-30 |
| TW572798B (en) | 2004-01-21 |
| KR100608452B1 (en) | 2006-08-02 |
| TW200305461A (en) | 2003-11-01 |
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