CN1450651A - Image sensor package structure and image taking module using said sensor - Google Patents

Image sensor package structure and image taking module using said sensor Download PDF

Info

Publication number
CN1450651A
CN1450651A CN03129752A CN03129752A CN1450651A CN 1450651 A CN1450651 A CN 1450651A CN 03129752 A CN03129752 A CN 03129752A CN 03129752 A CN03129752 A CN 03129752A CN 1450651 A CN1450651 A CN 1450651A
Authority
CN
China
Prior art keywords
image sensor
circuit substrate
image
pcb circuit
pin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN03129752A
Other languages
Chinese (zh)
Inventor
王鸿仁
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to CN03129752A priority Critical patent/CN1450651A/en
Publication of CN1450651A publication Critical patent/CN1450651A/en
Pending legal-status Critical Current

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161Cap
    • H01L2924/1615Shape
    • H01L2924/16195Flat cap [not enclosing an internal cavity]

Landscapes

  • Solid State Image Pick-Up Elements (AREA)

Abstract

Image sensor packaging structure is to mount an image sensor on PCB circuit baseplate with conductive layer and a window on one surface, the window is about the size of the image sensor grain sensing zone, lead foots are formed by mask etching on PCB corresponding to the grain welding pad and adhered with conductive medium for grains connecting to PCB to form electrical connection by SMT method and places corresponding to grains are sealed by glass plates. The image extraction module is made by desigining a module circuit in SMT baseplate and open holes similar to the side of the grain, the lead foot is adhered to the open hole and connected with the module electrically.

Description

Image sensor package and use the image acquisition module of this image sensor
Technical field
The present invention relates to image sensor, relate in particular to and a kind ofly offer window by the PCB circuit board and become base plate for packaging, be beneficial to crystal grain and cover crystalline substance and glass plate last slice, thereby can simplify the encapsulation preparation procedure and the image sensor package of compactization image acquisition module advantage is provided and uses the image acquisition module of this image sensor.
Background technology
Comparatively general image sensor (Image sensor) IC structure packing technique is a ceramic structure dress (CLCC) at present, as Figure 12, plastic base structure dress (PLCC) shown in Figure 13, C/F plastics shown in Figure 12 penetrate structure dress (KLCC), common being characterized as of these structure packing techniques carried out routing (Wire bonding) after crystal grain is implanted crystal cup (Die pad) again, yet, extensively reach under the leading of general consumption electronic products in the image sensor application, the restriction that structure is dressed up this and packaging housing volume exceedes and is tending towards harsh, so it is clumsy that aforementioned structure packing technique phase shape is seen, problem separately as; 1, to be difficult for causing structure to dress up too high for ceramic structure dress (CLCC) required substrate burning techniques preparing product, only is used on the product that requires high power and high-reliability usually.2, plastic base structure dress (PLCC) as shown in figure 10 need penetrate (Pre-mold) side wall 80a at the PCB circuit substrate; the substrate 80b that the L/F plastics penetrate structure dress (KLCC) needs to penetrate with lead frame; these two kinds of construction method preparation process need be equipped with jetting mold in addition; so; preparation process is numerous and diverse and the only more ceramic structure packing technique of cost is low; but both packaging body poor heat radiation cause crystal grain or the product warpage (Warpage) and the problem of making moist easily, cause the reliability of product quality relatively poor.3, plastic base structure dress (PLCC) as shown in figure 11, its substrate mainly is to form having above the PCB circuit substrate 81b of wiring folded again another PCB circuit substrate of frame and gummed, so its preparation process is not simplified, two-layer PCB circuit substrate can be peeled off because of the gummed flaw on the contrary.4, plastic base structure dress (PLCC) and L/F plastics penetrate the structure dress increases its lead frame (Lead fram) preparation procedure, though but automation is made in a large number, but need to consider that lead frame precision overcomes the reliability issues that routing engages, and be difficult for being applied in the Chip Packaging of high I/O.5, these structure packing techniques all need to carry out routing, except increasing device requirement, production efficiency is difficult for improving, and be subjected to the restriction of substrate demand, make its final packaging body volume excessive, if be applied to organize the structure image acquisition module, required printed circuit board (PCB) increases module whole thickness again, so impede for the mobile electronic product design formation of classes such as mobile phone, PDA, network camera.
Based on aforementioned, the trend of structure packing technique is to covering the development of crystalline substance (Flip chip) packaged type at present, this kind preparation process need engage with circuit junction reflow on the substrate in long projection (Bump) preparation on the wafer (Wafer) again, therefore need crystal grain end face forward substrate, so, limited the prerequisite that the image sensor sensing area must be opened, like this, have the best opering characteristic of electric apparatus though cover crystalline substance, advantage with crystal grain good heat dissipation and less package dimension, but this technology still has certain degree of difficulty in the application of image sensor.
As shown in figure 15, be existing a kind of image sensor crystal covering type assembling structure 9, glass plate 91 inner faces of its top utilize light shield etching technique framework to go out circuit 910, so its preparation process is rather complicated, and may influence the reliability of optical characteristics or its encapsulating products because of glass plate plate plate and intercrystalline filler shortcoming.On the other hand, the application of image capture circuit module gets over extensively, yet modular thinking needs to echo mutually with the end use application product, for example communication product or personal digital product are all towards in conjunction with image acquisition function the time, small size and dual cheaply competitively target are the recent market orientation, if can incorporate these targets into modular design together, Ying Gengneng accords with the demands of the market when improving packaging cost and volume.
Summary of the invention
In order to overcome the above-mentioned shortcoming that existing product exists, the invention provides a kind of image sensor encapsulation knot
Structure and use the image acquisition module of this image sensor, it is finished assembling fully and simplifies preparation process and plant equipment demand with the installing of SMT (surface adhering) structure, the reliability of improving the quality of products, manufacturing cost is lower, encapsulation volume significantly reduces, and makes product structure compact with meeting the market requirement; Utilize the image capture circuit module of encapsulating structure support of the present invention can reach the short and small lightening competitive advantage of volume.
The technical solution adopted for the present invention to solve the technical problems is:
Image sensor package of the present invention, it comprises: offer one on a PCB circuit substrate surface and penetrate into another corresponding surperficial window, the sensing area size of the specification of window and image sensor is close, cover veil around the wall edge of window, in case falling stop dirt is fallen into the image sensor grain surface; This PCB circuit substrate surface forms several pins (Lead) in window side in light shield etching (Etching) mode, pin and outer pin two parts in each pin is set at; One image sensor crystal grain (Chip) constitutes electrically connect with the corresponding PCB of the being engaged to circuit substrate with interior pin of its weld pad; PCB circuit substrate the window's position corresponding with crystal grain is with a glass plate capping; Filling (Underfill) glue material is to constitute airtight conditions around crystal grain and the glass plate.
Aforesaid image sensor package, wherein several pins of light shield etching mode formation are located at the single side surface of PCB circuit substrate.
Aforesaid image sensor package, wherein several pins of light shield etching mode formation are located at PCB circuit substrate both side surface, several pinouts of the same side are interior pin (Inner lead), several pinouts that opposite side forms are outer pin (Out lead), and each inside and outside pin is for electrically connecting.
Aforesaid image sensor package, wherein glass plate simultaneously plates the AR film, another side plating IR film.
Aforesaid image sensor package, wherein the veil that covers around the wall edge of window comprises coating welding resisting layer (Solder mask) or gold-plated covering.
Aforesaid image sensor package, wherein the glass plate gummed is sealed on the crystal grain induction zone of image sensor, and the thickness of glass plate is slightly larger than PCB circuit substrate thickness.
The image acquisition module of application of aforementioned image sensor of the present invention, it comprises an image sensor, a SMT substrate, a lens group; This image sensor package comprises a PCB circuit substrate, an image sensing crystal grain, a glass plate; PCB circuit substrate surface is provided with one and penetrates into another corresponding surperficial window, and the specification of this window is close with image sensor sensing area size; This PCB circuit substrate surface is provided with several pins (Lead) that form with light shield etching (Etching) mode in window side, pin and outer pin two parts in each pin (Lead) is set at; This image sensing crystal grain (Chip) constitutes electrically connect with its weld pad with the corresponding PCB of the being engaged to circuit substrate of pin in the PCB circuit substrate; PCB circuit substrate the window's position capping one glass plate corresponding with image sensing crystal grain; Filling (Underfill) glue material constitutes airtight conditions around image sensing crystal grain and the glass plate; Be provided with modular circuit in this SMT substrate and reserve a grass discharge hole, the specification of this open bore is close with aforementioned image sensing grain size; The outer pin of this image sensor is fixed on the position of SMT substrate open bore and constitutes electric connection with modular circuit in the surface adhering mode; This lens group is provided with a lens mount (Holder) and is located at the image sensor top.
The image acquisition module of aforesaid image application transducer, wherein image sensor is located at the single side surface of PCB circuit substrate with several pins that the light shield etching mode forms.
The image acquisition module of aforesaid image application transducer, wherein image sensor is located at PCB circuit substrate both side surface with several pins that the light shield etching mode forms, several pinouts of the same side are interior pin (Inner lead), several pinouts that opposite side forms are outer pin (Out lead), and each inside and outside pin is for electrically connecting.
The image acquisition module of aforesaid image application transducer, wherein the veil that covers around the wall edge of window comprises coating welding resisting layer (Solder mask) or gold-plated covering.
The image acquisition module of aforesaid image application transducer, wherein glass plate simultaneously is coated with the AR film, and another side is coated with the IR film.
The image acquisition module of aforesaid image application transducer, wherein the glass plate gummed is sealed on the crystal grain induction zone of image sensor, and sheet thickness is slightly larger than PCB circuit substrate thickness.
The image acquisition module of application of aforementioned image sensor of the present invention is characterized in that, comprises a PCB circuit substrate, an image sensing crystal grain, a glass plate, a lens group; Establish the window that modular circuit and penetrates into another corresponding surface in this PCB circuit substrate surface has, the specification of this window is close with image sensor sensing area size; This PCB circuit substrate surface is provided with several pins that form with the light shield etching mode in window side, pin and outer pin in each pin is made as; This image sensing crystal grain constitutes electrically connect with its weld pad with the corresponding PCB of the being engaged to circuit substrate of pin in the PCB circuit substrate; PCB circuit substrate the window's position capping one glass plate corresponding with image sensing crystal grain; Filling glue material constitutes airtight conditions around image sensing crystal grain and the glass plate; This lens group is provided with lens mount and is located at the image sensor top.
Beneficial effect of the present invention is, the image sensor package of the present invention and preparation encapsulation technology and the image acquisition module assembling that provide import SMT structure packing technique meets the automated production needs; The glass plate two sides that the present invention is sealed on image sensing crystal grain top is coated with AR film and IR film respectively, can increase light transmittance and reduce the light reflection to prevent that strong illumination from making image white mist, ghost occur, can omit the setting of filter in the lens group, so reduce the height of lens group, have remarkable benefit for the application that improves subsequent product and the improvement quality of image like this; Image sensor package of the present invention and image acquisition module assembling mode are guaranteed production reliability; Compare with existing encapsulation technology, the present invention significantly reduces the image acquisition module whole height, has remarkable benefit for improving the subsequent applications product; Effectively improve production throughput, lower device requirement, the product cost reduces significantly.
Description of drawings
The present invention is further described below in conjunction with drawings and Examples.
Fig. 1 is the image sensor first example structure schematic diagram of the present invention.
Fig. 2 assembles the first embodiment schematic diagram of the image acquisition module that constitutes for using image sensor shown in Figure 1.
Fig. 3 is a SMT substrate schematic diagram shown in Figure 2.
Fig. 4 A is the image sensor second example structure schematic diagram of the present invention.
Fig. 4 B is image sensor the 3rd an example structure schematic diagram of the present invention.
Fig. 5 is the second embodiment schematic diagram that the assembling of image sensor shown in the application drawing 4A constitutes image acquisition module.
Fig. 6 is image sensor the 4th an embodiment schematic diagram of the present invention.
Fig. 7 assembles the 3rd embodiment schematic diagram of the image acquisition module that constitutes for using image sensor shown in Figure 6.
Fig. 8 A is image sensor the 5th an embodiment schematic diagram of the present invention.
Fig. 8 B is image sensor the 6th an embodiment schematic diagram of the present invention.
Fig. 9 is the 4th embodiment schematic diagram that the assembling of image sensor shown in the application drawing 8A constitutes image acquisition module.
Figure 10 is the 5th an embodiment schematic diagram of the utility model image acquisition module.
Figure 11 is the 6th an embodiment schematic diagram of the utility model image acquisition module.
Figure 12 is existing plastic base structure dress (PLCC) image sensor structure schematic diagram.
Figure 13 is another schematic diagram of existing plastic base structure dress (PLCC) image sensor structure.
Figure 14 penetrates structure dress (KLCC) image sensor structure schematic diagram for existing C/F plastics.
Figure 15 is existing crystalline substance (Flip chip) the encapsulation image sensor structure schematic diagram that covers.
The number in the figure explanation
Prior art part: 80a side wall, 80b substrate, 81b PCB circuit substrate, 9 image sensor crystal covering type assembling structures, 91 glass plates, 910 circuit;
Part of the present invention: 1 image sensor package, the 10PCB circuit substrate, 11 windows, 111 veils, 12 pins, pin in the 12a, the outer pin of 12b, 13 solder joints, 2 image sensing crystal grain, 21UV glue material, 3 glass plates, 31 UV glue materials, the 4SMT substrate, 41 modular circuits, 411 pins, 412 grafting pins, 42 open bore, 5 lens group, 51 lens mounts, 6 image acquisition modules, 61 image sensors, 611 circuit substrates, pin in 612,613 outer pins, 614 vias, the 62SMT substrate, 63 SMT substrate open bore, 64 lens mounts, 71 image sensors, 711 crystal grain, 712 glass plates, 713 windows, 714UV glue, the 7A image acquisition module, 715 lens group, 716 lens mounts, pin in the 720a, pin in the 730a, the outer pin of 720b, the outer pin of 730b, the 7B image acquisition module, the 1A image acquisition module, 10a PCB circuit substrate, 2a image sensing crystal grain, the 3a glass plate, the 5a lens group, the 11a window, the 12a pin, the 1B image acquisition module, 10b PCB circuit substrate, 2b image sensing crystal grain, the 3b glass plate, the 5b lens group, the 11b window.
Embodiment
Consult shown in Figure 1, image sensor package 1 of the present invention, it comprises: a PCB circuit substrate 10 surfaces offer one and penetrate into another corresponding surperficial window 11, the sensing area size of the specification of window and an image sensing crystal grain (Chip) 2 is close, and coat veils 111 such as welding resisting layer (Soldermask) or gold-plated covering around the wall edge of window, in case falling stop dirt is fallen into the image sensor grain surface; These PCB circuit substrate 10 1 side surfaces form several pins (Lead) 12 in window side in light shield etching (Etching) mode, pin 12a and outer pin 12b two parts in each pin (Lead) is set at; At least coat welding resisting layer (Solder mask) between each pin (Lead) at the PCB circuit substrate, pin part in each is being covered connection medium according to image sensor crystal grain bond pad locations again with conduction property, this dielectric material comprises elargol, tin cream or has the joint glue material of conductive characteristic, and the part is covering that mode can adopt that the wire mark method applies, needle-like tool transfer printing or form a solder joint 13 at interior pin with dotting glue method; One image sensor crystal grain 2 is engaged to the PCB circuit substrate and constitutes electrically connect to cover brilliant method or not have the routing preparation method so that its weld pad is corresponding with interior pin solder joint; Another surface window position of the PCB circuit substrate corresponding with crystal grain is with a glass plate plate body 3 cappings; Filling (Underfill) UV glue material 21,31 and harden airtight with ultraviolet irradiation around crystal grain and the glass plate plate body to constitute.Image sensor in the present embodiment, the PCB circuit substrate is prior art.
By aforementioned encapsulating structure 1 as can be known this image sensor adopt the PCB circuit substrate to replace plastics to penetrate substrate, light shield etching conductive layer generates pin to replace existing lead frame, so having, the encapsulation quality covers the best opering characteristic of electric apparatus that brilliant method possesses, the crystal grain thermal diffusivity reaches advantages such as package dimension is less well, compare with other image sensor structure packing technique, the present invention can utilize SMT equipment that the corresponding crystal covering type that carries out of one image sensor crystal grain (Chip) weld pad and interior pin solder joint 13 positions of PCB circuit substrate is engaged and the formation electrically connect, and utilize a machine or SMT equipment with a glass plate 3 capping the window's positions, so the present invention is except thereby encapsulating structure is simplified the advantage that reduces packaging cost, the more important thing is that device requirement reduces, reduce or remit the program of the outer processing of many trusts, compare with general Flip Chip, not be used in grain surface and carry out filling and more can guarantee the product degree of reliability.
Consult shown in Figure 2, embodiment for image acquisition module of the present invention, an its application of aforementioned image sensor 1 of the present invention and a SMT substrate 4,5 assemblings of one lens group constitute, wherein: as shown in Figure 3, be provided with a modular circuit 41 and an open bore 42 in this SMT substrate, other several pins 411 of reserving of these modular circuit 41 open bore, and be provided with grafting pin 412 at SMT substrate one end, in being assembled into the preparation process of image acquisition module, need with the reticulated printing technology with the tin cream part attached on these several pins as tie point, so image sensor 1 of the present invention can utilize the outer pin 12b of its PCB circuit substrate to be fixed on SMT substrate open bore position and to constitute electric connection with modular circuit in the surface adhering mode, single product is big or small close after the specification of this SMT substrate open bore and the encapsulation of aforementioned image sensor, embeds in the open bore for image sensing crystal grain; This lens group 5 is provided with a lens mount (Holder) 51 and is located at the PCB circuit substrate top of image sensor.In addition, image sensor packaged glass plate can carry out plated film earlier in its previous operations process, one side is plated the AR film, another side plating IR film can increase light transmittance and reduce the light reflection preventing that strong illumination from making image white mist, ghost occur, thereby can omit the setting of filters in the lens group 5, so, the height of lens group can reduce again, and then reduces the printed circuit board (PCB) whole height significantly, has remarkable benefit for the application that improves subsequent product.
Consult Fig. 4 A, shown in the 4B, be the other two kinds of embodiment of image sensor of the present invention, the PCB circuit substrate 611 of these image sensor 61 encapsulation is in light shield etching (Etching) mode, form side pin (Inner lead) 612 in window edge is provided with several, pin is electrically connected to several outer pins (Out lead) 613 on PCB circuit substrate opposite side surface in each, shown in Fig. 4 A, be connected with via 614 between interior pin and outer pin, as shown in Figure 5, second embodiment for image acquisition module of the present invention, this image acquisition module 6 utilizes the SMT substrate 62 with odt circuit, aforementioned image sensor 61 is adhered to the SMT base lower surface, make the image sensor glass plate embed SMT substrate open bore 63, lens mount 64 is located at this SMT upper surface of base plate, this design can reduce the lens mount height significantly, more can make eyeglass directly be attached to SMT substrate top, and SMT substrate superjacent air space is compressed to least limit.
Consult shown in Figure 6, be image sensor the 4th embodiment of the present invention, after main discrepancy is the peripheral applied upward UV glue of crystal grain 711 sensing areas of this image sensor 71, glass plate 712 is placed in the PCB circuit substrate window 713 and directly is bonded in grain surface, sheet thickness is slightly larger than the PCB circuit substrate and is beneficial to the cleaning panes surface, carry out UV irradiation curing again and finish the gummed capping behind the peripheral filling UV of glass plate glue 714, this way can be omitted sheet thickness and take up space; As shown in Figure 7, be image acquisition module the 3rd embodiment of the present invention, the lens mount 716 of this image acquisition module 7A is located at the PCB circuit substrate top of this image sensor, and this design can reduce the height of lens group 715 equally significantly.
Consult shown in Fig. 8 A, the 8B, be image sensor the 5th, the 6th embodiment of the present invention, glass plate is placed into equally in the PCB circuit substrate window and directly is bonded in grain surface, itself and difference shown in Figure 6 are in PCB circuit substrate both side surface and all possess conductive layer, conductive layer pin 720a, 730a in window side forms several wherein, pin is electrically connected to pin 720b, 730b outside several that another conductive layer forms in the window side etching in each, and these two kinds of form image sensors can provide the different adhesion position of selection in the subsequent applications; As shown in Figure 9, be the embodiment of the image acquisition module 7B of the 4th kind of form of the present invention.
Consult shown in Figure 10ly, be the 5th embodiment of image acquisition module of the present invention, this image acquisition module 1A comprises a PCB circuit substrate 10a, an image sensing crystal grain 2a, a glass plate 3a, a lens group 5a; Establish the window 11a that modular circuit and penetrates into another corresponding surface in this PCB circuit substrate 10a surface has, the specification of window is close with image sensing crystal grain sensing area size; PCB circuit substrate 10a surface is provided with several pins 12a that the light shield etching forms in window side; PCB circuit substrate 10a coats welding resisting layer (Solder mask) at least between each pin, covering in each pin part and have conductivity and connect medium according to influencing transducer crystal grain bond pad locations again, dielectric material comprises elargol, tin cream or has the joint glue material of conductive characteristic, the part is covering that mode can adopt that the wire mark method applies, needle-like tool transfer printing or form a solder joint at pin with dotting glue method, and this image sensing crystal grain is engaged to the PCB circuit substrate and constitutes electric connection with the corresponding PCB circuit substrate of its weld pad pin solder joint; At PCB circuit substrate the window's position capping glass plate 3a, filling UA glue material around image sensing manager and the glass plate, it is airtight to constitute to harden by ultraviolet irradiation, and this glass top is covered with the lens mount of lens group.
Consult shown in Figure 11, the 6th embodiment for image acquisition module of the present invention, the discrepancy of this image acquisition module 1B and image acquisition module shown in Figure 10 is, glass plate 3b is placed in the PCB circuit substrate 10b window 11b and directly is bonded in crystal grain 2b surface, and lens group 5b is located at the window top.
By these embodiment explanations, the present invention simplifies image sensor package by the PCB circuit substrate, and the design of SMT substrate is integrated and createed compact image acquisition module, so the present invention has practical industrial value.
The above, it only is preferred embodiment of the present invention, be not that the present invention is done any pro forma restriction, every foundation technical spirit of the present invention all still belongs in the scope of technical solution of the present invention any simple modification, equivalent variations and modification that above embodiment did.

Claims (13)

1, a kind of image sensor package is characterized in that, comprising: offer one on a PCB circuit substrate surface and penetrate into another corresponding surperficial window, the sensing area size of the specification of window and image sensor is close, covers veil around the wall edge of window; This PCB circuit substrate surface forms several pins in window side with the light shield etching mode, pin and outer pin in each pin is provided with; One image sensor crystal grain constitutes electrically connect with the corresponding PCB of the being engaged to circuit substrate with interior pin of its weld pad; PCB circuit substrate the window's position corresponding with crystal grain is with a glass plate capping; Filling glue material is to constitute airtight conditions around crystal grain and the glass plate.
2, image sensor package according to claim 1 is characterized in that, several pins that described light shield etching mode forms are located at the single side surface of PCB circuit substrate.
3, image sensor package according to claim 1, it is characterized in that, several pins that described light shield etching forms are located at PCB circuit substrate both side surface, several pins of the same side are interior pin, several pins that opposite side forms are outer pin, and each inside and outside pin is for electrically connecting.
4, according to claim 2 or 3 described image sensor packages, it is characterized in that described glass plate simultaneously is coated with the AR film, another side is coated with the IR film.
5, image sensor package according to claim 4 is characterized in that, the veil that covers around the wall edge of described window comprises coating welding resisting layer or gold-plated covering.
According to claim 1 or 5 described image sensor packages, it is characterized in that 6, described glass plate gummed is sealed on the crystal grain induction zone of image sensor, the thickness of glass plate is slightly larger than PCB circuit substrate thickness.
7, a kind of image acquisition module of using image sensor as claimed in claim 1 is characterized in that, comprises an image sensor, a SMT substrate, a lens group; This image sensor package comprises a PCB circuit substrate, an image sensing crystal grain, a glass plate; PCB circuit substrate surface is provided with one and penetrates into another corresponding surperficial window, and the specification of this window is close with image sensor sensing area size; This PCB circuit substrate surface is provided with several pins that form with the light shield etching mode in window side, pin and outer pin in each pin is made as; This image sensing crystal grain constitutes electrically connect with its weld pad with the corresponding PCB of the being engaged to circuit substrate of pin in the PCB circuit substrate; PCB circuit substrate the window's position capping one glass plate corresponding with image sensing crystal grain; Filling glue material constitutes airtight conditions around image sensing crystal grain and the glass plate; Be provided with modular circuit in this SMT substrate and reserve an open bore, single finished product size after the specification of this open bore and the encapsulation of aforementioned image sensor is close; The outer pin of this image sensor is fixed on the position of SMT substrate open bore and constitutes electric connection with modular circuit in the surface adhering mode; This lens group is provided with lens mount and is located at the image sensor top.
8, the image acquisition module of image application transducer according to claim 7 is characterized in that, described image sensor is located at the single side surface of PCB circuit substrate with several pins that the light shield etching mode forms.
9, the image acquisition module of image application transducer according to claim 7, it is characterized in that, described image sensor is located at PCB circuit substrate both side surface with several pins that the light shield etching mode forms, several pins of the same side are interior pin, several pins that opposite side forms are outer pin, and each inside and outside pin is for electrically connecting.
10, the image acquisition module of image application transducer according to claim 7 is characterized in that, the veil that covers around the wall edge of described window comprises coating welding resisting layer or gold-plated covering.
11, the image acquisition module of image application transducer according to claim 7 is characterized in that, described glass plate simultaneously is coated with the AR film, and another side is coated with the IR film.
12, the image acquisition module of image application transducer according to claim 7 is characterized in that, described glass plate gummed is sealed on the crystal grain induction zone of image sensor, and sheet thickness is slightly larger than PCB circuit substrate thickness.
13, a kind of image acquisition module of using image sensor package as claimed in claim 1 is characterized in that, comprises a PCB circuit substrate, an image sensing crystal grain, a glass plate, a lens group; Establish the window that modular circuit and penetrates into another corresponding surface in this PCB circuit substrate surface has, the specification of this window is close with image sensor sensing area size; This PCB circuit substrate surface is provided with several pins that form with the light shield etching mode in window side, pin and outer pin in each pin is made as; This image sensing crystal grain constitutes electrically connect with its weld pad with the corresponding PCB of the being engaged to circuit substrate of pin in the PCB circuit substrate; PCB circuit substrate the window's position capping one glass plate corresponding with image sensing crystal grain; Filling glue material constitutes airtight conditions around image sensing crystal grain and the glass plate; This lens group is provided with lens mount and is located at the image sensor top.
CN03129752A 2003-05-15 2003-05-15 Image sensor package structure and image taking module using said sensor Pending CN1450651A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN03129752A CN1450651A (en) 2003-05-15 2003-05-15 Image sensor package structure and image taking module using said sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN03129752A CN1450651A (en) 2003-05-15 2003-05-15 Image sensor package structure and image taking module using said sensor

Publications (1)

Publication Number Publication Date
CN1450651A true CN1450651A (en) 2003-10-22

Family

ID=28684486

Family Applications (1)

Application Number Title Priority Date Filing Date
CN03129752A Pending CN1450651A (en) 2003-05-15 2003-05-15 Image sensor package structure and image taking module using said sensor

Country Status (1)

Country Link
CN (1) CN1450651A (en)

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100362666C (en) * 2004-03-24 2008-01-16 宏齐科技股份有限公司 Packaging structure of optical sensing chip and producing method thereof
CN100483655C (en) * 2005-09-09 2009-04-29 鸿富锦精密工业(深圳)有限公司 Producing process for digital camera module
CN1599428B (en) * 2003-08-13 2010-12-08 西铁城电子股份有限公司 Compact imaging module
CN101488476B (en) * 2009-02-25 2011-06-22 苏州晶方半导体科技股份有限公司 Encapsulation method
CN102123238A (en) * 2010-01-11 2011-07-13 奇景光电股份有限公司 Image capture module and lens module
CN102331612A (en) * 2010-07-13 2012-01-25 鸿富锦精密工业(深圳)有限公司 Lens module and portable electronic device using same
CN102593116A (en) * 2011-01-12 2012-07-18 陈淑姿 Thinned image capture module and manufacturing method thereof
TWI415453B (en) * 2005-09-23 2013-11-11 Hon Hai Prec Ind Co Ltd Digital camera moudle assembly
CN103389610A (en) * 2013-07-24 2013-11-13 南昌欧菲光电技术有限公司 Camera module, manufacturing method thereof and handheld communication device adopting camera module
CN103972256A (en) * 2014-05-20 2014-08-06 苏州晶方半导体科技股份有限公司 Packaging method and packaging structure
CN103985723A (en) * 2014-05-20 2014-08-13 苏州晶方半导体科技股份有限公司 Packaging method and packaging structures
CN105990379A (en) * 2015-02-25 2016-10-05 联想(北京)有限公司 Photosensitive module group and manufacturing method thereof
CN110190036A (en) * 2019-06-10 2019-08-30 华天慧创科技(西安)有限公司 A kind of wafer level packaging structure and packaging method of floodlighting mould group

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1599428B (en) * 2003-08-13 2010-12-08 西铁城电子股份有限公司 Compact imaging module
CN100362666C (en) * 2004-03-24 2008-01-16 宏齐科技股份有限公司 Packaging structure of optical sensing chip and producing method thereof
CN100483655C (en) * 2005-09-09 2009-04-29 鸿富锦精密工业(深圳)有限公司 Producing process for digital camera module
TWI415453B (en) * 2005-09-23 2013-11-11 Hon Hai Prec Ind Co Ltd Digital camera moudle assembly
CN101488476B (en) * 2009-02-25 2011-06-22 苏州晶方半导体科技股份有限公司 Encapsulation method
CN102123238A (en) * 2010-01-11 2011-07-13 奇景光电股份有限公司 Image capture module and lens module
CN102331612A (en) * 2010-07-13 2012-01-25 鸿富锦精密工业(深圳)有限公司 Lens module and portable electronic device using same
CN102593116A (en) * 2011-01-12 2012-07-18 陈淑姿 Thinned image capture module and manufacturing method thereof
CN103389610A (en) * 2013-07-24 2013-11-13 南昌欧菲光电技术有限公司 Camera module, manufacturing method thereof and handheld communication device adopting camera module
CN103389610B (en) * 2013-07-24 2016-04-13 南昌欧菲光电技术有限公司 Camera module and manufacture method thereof, adopt the hand-hold communication device of this camera module
CN103972256A (en) * 2014-05-20 2014-08-06 苏州晶方半导体科技股份有限公司 Packaging method and packaging structure
CN103985723A (en) * 2014-05-20 2014-08-13 苏州晶方半导体科技股份有限公司 Packaging method and packaging structures
CN103972256B (en) * 2014-05-20 2017-03-29 苏州晶方半导体科技股份有限公司 Method for packing and encapsulating structure
CN103985723B (en) * 2014-05-20 2017-06-20 苏州晶方半导体科技股份有限公司 Method for packing and encapsulating structure
CN105990379A (en) * 2015-02-25 2016-10-05 联想(北京)有限公司 Photosensitive module group and manufacturing method thereof
CN105990379B (en) * 2015-02-25 2019-07-26 联想(北京)有限公司 A kind of photosensitive mould group and production method
CN110190036A (en) * 2019-06-10 2019-08-30 华天慧创科技(西安)有限公司 A kind of wafer level packaging structure and packaging method of floodlighting mould group

Similar Documents

Publication Publication Date Title
CN101981913B (en) Attachment of wafer level optics
CN1266920C (en) Video camera module
CN103915393B (en) Photoelectric packaging body and manufacturing method thereof
CN1193583C (en) Image sensor module and making method thereof
CN1450651A (en) Image sensor package structure and image taking module using said sensor
US20030201507A1 (en) Image sensor semiconductor package with castellation
CN101044805A (en) Hybrid multilayer substrate and method for manufacturing the same
CN1835195A (en) Method for manufacturing a semiconductor package with a laminated chip cavity
JP2001516956A (en) Integrated circuit package using transparent encapsulant and method of manufacturing the package
CN101056358A (en) Camera module
JPH02278872A (en) Image sensor
CN1209948C (en) Integrated module board with embedded IC chip and passive element and its production method
CN1929120A (en) Stack type chip packaging structure, chip packaging body and manufacturing method
CN1476065A (en) Image sensor packaging method
CN2535926Y (en) Light-emitting diode packaging structure
KR100653551B1 (en) A manufacture method of a chip scale package of a image sensor using a supersonic junction
CN1921128A (en) Packaging structure for optical sensing chip
CN1921126A (en) Photo-sensor packaging structure
CN103579258A (en) Substrate embedded type module structure
CN2648606Y (en) Image sensor chip size package structure
CN106571377A (en) Image sensor module and manufacturing method thereof
CN218587155U (en) Packaging module and PCB
CN1178288C (en) Method for packaging thin semiconductor device with reversely mounted chip
TWI221324B (en) Image sensor package and image pickup module using the image sensor
KR100497286B1 (en) Chip on board type image sensor module and manufacturing method thereof

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C02 Deemed withdrawal of patent application after publication (patent law 2001)
WD01 Invention patent application deemed withdrawn after publication