CN1433130A - 用于转换电能的矩阵变换器 - Google Patents

用于转换电能的矩阵变换器 Download PDF

Info

Publication number
CN1433130A
CN1433130A CN03100530A CN03100530A CN1433130A CN 1433130 A CN1433130 A CN 1433130A CN 03100530 A CN03100530 A CN 03100530A CN 03100530 A CN03100530 A CN 03100530A CN 1433130 A CN1433130 A CN 1433130A
Authority
CN
China
Prior art keywords
switch
matrix converter
matrix
diamond
converter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN03100530A
Other languages
English (en)
Other versions
CN1323484C (zh
Inventor
E·迪塔尔特
C·伯耶尔
F·布雷
H·施奈德
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Alstom Transport SA
Alstom Transport Technologies SAS
Original Assignee
Alstom SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Alstom SA filed Critical Alstom SA
Publication of CN1433130A publication Critical patent/CN1433130A/zh
Application granted granted Critical
Publication of CN1323484C publication Critical patent/CN1323484C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/003—Constructional details, e.g. physical layout, assembly, wiring or busbar connections
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M5/00—Conversion of ac power input into ac power output, e.g. for change of voltage, for change of frequency, for change of number of phases
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M5/00—Conversion of ac power input into ac power output, e.g. for change of voltage, for change of frequency, for change of number of phases
    • H02M5/02—Conversion of ac power input into ac power output, e.g. for change of voltage, for change of frequency, for change of number of phases without intermediate conversion into dc
    • H02M5/04—Conversion of ac power input into ac power output, e.g. for change of voltage, for change of frequency, for change of number of phases without intermediate conversion into dc by static converters
    • H02M5/22—Conversion of ac power input into ac power output, e.g. for change of voltage, for change of frequency, for change of number of phases without intermediate conversion into dc by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M5/275—Conversion of ac power input into ac power output, e.g. for change of voltage, for change of frequency, for change of number of phases without intermediate conversion into dc by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M5/293—Conversion of ac power input into ac power output, e.g. for change of voltage, for change of frequency, for change of number of phases without intermediate conversion into dc by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/4901—Structure
    • H01L2224/4903—Connectors having different sizes, e.g. different diameters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
    • H01L2224/49111—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191—Disposition
    • H01L2924/19101—Disposition of discrete passive components
    • H01L2924/19107—Disposition of discrete passive components off-chip wires
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
    • Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Ac-Ac Conversion (AREA)
  • Power Conversion In General (AREA)
  • Electronic Switches (AREA)

Abstract

一种用于在至少一个电压源(1)，特别是一个供电网，和至少一个电流源(2)，特别是一个负载之间转换电能的矩阵变换器，该变换器包括一个开关(6)矩阵，将上述电压源(1)与电流源(2)相连，所述矩阵变换器的特征在于：每个所述开关(6)有两个端子(5)，通过一金刚石(4)光电导层互连，各开关(6)通过一个光源(7)照射置于开关(6)的两个端子(5)间的金刚石(4)层来控制控制。

Description

用于转换电能的矩阵变换器
技术领域
本发明涉及一种用于在一个电压源，例如：供电网，和一个电流源，如：一台电动机之间转换电能的矩阵变换器。本发明特别适用于在铁路领域控制牵引式电动机。
背景技术
美国专利申请US2001/0026427 A1公开了一种矩阵变换器，它包括一个3×3的由双向开关构成的矩阵，用于从一个三相电网向一台异步电动机供电。借助于其模块化的拓扑构造，这种矩阵变换器有这样的优点，即通过适当控制各个开关，它能将一给定的交流(AC)直接转换成一不同电压和不同频率的AC，而不象通常使用的固定结构的变换器那样要求一个AC-DC整流器，一个DC-DC斩波器，和一个DC-AC不间断电源(UPS)相互串联并与滤波电容结合以获得同样的效果。
然而，在这种矩阵变换器中，双向开关由二极管与集成栅双极型晶体管(IGBT)元件结合构成，这就使其不能耐高压，因为大多数目前市场上可得到的鲁棒(robust)IGBT元件的工作电压被限制为大约6.5kV。此外，这样的IGBT元件有一个缺点，即其控制栅必须与其集电极和发射极隔离开，当IGBT元件的各端上的电压高时，就会产生问题。
发明概述
因此，本发明的一个目的是提供一种能在高电压工作的新型矩阵变换器。本发明的另一个目的是提供一种矩阵变换器，其中开关控制与各开关的端子很自然地隔离开。
为此，本发明提供一种用于在至少一个电压源，例如：供电网，和至少一个电流源，特别是一个负载之间转换电能的矩阵变换器，所述变换器包括一个将上述电压源和上述电流源相连的开关矩阵，所述矩阵变换器的特征在于上述开关中的每一个都有两个通过金刚石的光电导层互连的端子，每个开关都通过一个光源照射插在该开关的两个端子之间的金刚石层来进行控制。
在特定的实施例中，本发明的矩阵变换器可单独或以任何技术上可行的组合具有下列一个或多个特征：
开关矩阵的端子被置于同一平面；
所述开关的金刚石层由一金刚石衬底通过化学气相沉积法(CVD)构成；
所述端子是利用连续气相沉积钛、铂和金在金刚石衬底上金属镀覆构成的；
所述光源是紫外光源；
一个单个的金刚石衬底支撑所述开关矩阵的所有端子；
变换器的各开关由一单独的金刚石衬底形成，该金刚石衬底由一陶瓷衬底支撑，单个的金刚石衬底通过一层玻璃与支撑陶瓷衬底结合；
各开关有两个端子通过由支撑陶瓷衬底所带的导体导轨(conductortracks)分别与电压源和电流源相连；
陶瓷衬底由氮化铝(AlN)构成；
陶瓷衬底有一个与支撑导体导轨的一面相对的一面，该面由流动的冷却液冷却。
参照附图阅读对下列两个以非限制性示例形式给出的实施例的描述，将会更好地理解本发明的目的，特点和优点。
附图简述
图1是本发明一个特定实施例的矩阵变换器的透视图；
图2是图1矩阵变换器金刚石开关的剖面图；
图3是本发明一个变化的实施例的矩阵变换器的透视图；
图4是图3矩阵变换器金刚石开关的细节。
为了清楚起见，只示出了有助于理解本发明的那些部件。在附图中，相同的部件使用相同的参考号。
发明详细描述
图1示出了本发明矩阵变换器的一个特定实施例。该矩阵变换器有三个输入连接线1和三个输出连接线2，输入连接线1，例如：将由一个三相电网供电，而输出连接线2，例如：将向一台异步电动机供能。
如图所示，矩阵变换器包括一个由塑料材料制成的，基本上是方形的基底3，其中央支撑一个金刚石衬底4。金刚石衬底4利用化学气相沉积法(CVD)通过已知方法制造，例如：其宽度为150mm，厚度为50μm。
金刚石衬底4的一个表面上有9对金属镀覆的端子5，被排列成3×3形式的矩阵，每一对金属镀覆的端子5构成一个相应的金刚石开关6的端子5，端子被分开约10mm以承受两端子间的高电位差。例如：可以通过包括下列步骤的方法在金刚石衬底4上获得金属镀覆的端子5：
在金刚石衬底的上表面上沉积光敏树脂；
在要进行金属镀覆的区域，通过一掩膜将上述树脂暴露在光照之下而除去树脂；
在部分由树脂覆盖的金刚石衬底的表面上，利用连续气相沉积钛、铂和金进行金属镀覆；
将金刚石衬底浸入丙酮中除去剩余的树脂。
如图1和图2所示，一个紫外线光源7被置于面对各金刚石开关的两个端子之间的缝隙处，每个光源7有一光束(图中用虚线表示)，使其能根据指令照射各金刚石开关6的两个端子5之间的金刚石表面4，引起两端子5间导电。光源7由安装在腿8上的板(图中未示出)支撑，腿8由基底3的上表面承载。光源由一个构成变换器控制电路的控制电路分别独立控制。
变换器的三个输入连接线1和三个输出连接线2与金刚石开关6的矩阵的三行和三列对齐分布，各连接器1和2的端部由基底3支撑。各连接线1通过铝线9与的三个金刚石开关6中每一个的两个端子5之一电气连接，该金刚石开关6与输入连接线1对准。金刚石开关6的另一个端子5与输出连接线2连接，该输出连接线2与包含金刚石开关6的列对齐。
这种矩阵变换器提供这样的优点，即具有能耐其端子上高电压的金刚石开关，该开关能自然地使电能通过变换器在两个方向中的任意一个方向流动。此外，这样的变换器通过光学控制金刚石开关来进行控制，这种控制使其能自然地与开关端子上的电位隔离。最后，由于其拓扑结构通过光控模块化，该矩阵变换器使任何变换成为可能，例如：单相或三相直接AC-AC变换，AC-DC变换，或当与一DC电源相连时，DC-DC变换。
图3示出了本发明变换器的一个变化的实施例。如图所示，矩阵变换器包括一由氮化铝(AlN)构成的陶瓷基底13，其上装有三个输入连接线1和三个输出连接线2。陶瓷基底上有9个以3×3矩阵形式分布的洞，每个洞中含有一边长约10mm的方形金刚石衬底14，周围被玻璃20包围，更详细的见图4。玻璃区域20可以充有陶瓷，形成金刚石衬底14与陶瓷基底13的界面，其优点是膨胀系数a接近3.5，使其能衰减由于金刚石(a＝1)和AlN基底(a＝4.5)之间不同的膨胀引起的力。
如图4所示，每个金刚石衬底14带有两个金属镀覆的端子15，置于正好相反的两个点上，端子15构成金刚石开关16的两个端子，并且通过铝线21与两个连接片19a相连，连接片19a由AlN基底13在玻璃层20的周边处承载。连接片19a与通过金属镀覆AlN基底13的表面而形成的导体导轨19相连，导轨19这样安排以使将一个输入连接线1与沿矩阵的同一行配置的三个金刚石开关16中每一个的一个端子15相连，金刚石开关16中的另外三个端子15与三个输出连接线各自相连。
紫外线光源7(仅示于图3中)被置于面对所有相应的金刚石衬底14，使各光源7能根据指令照射一相应的金刚石开关16的两个端子15之间的缝隙，以便在上述两个端子15之间导电。光源7由图3中点划线所示的且安装在腿8上的板22支撑，腿8由陶瓷基底13的上表面承载，光源7由控制电路分别独立控制。
陶瓷基底13的下表面可以由一歧管引导的冷却液冲刷，以能够除去矩阵变换器工作时在金刚石开关16处释放的热量。在这种情况下，使金刚石衬底的厚度适应于变换器的工作电压，并且可以，例如：在50μm的厚度和200μm的厚度之间变化，50μm的厚度用于耐压金刚石的端子与冷却液之间的约5kV的电位差，200μm的厚度底用于耐压金刚石的端子与冷却液之间的约20kV的电位差。
这样一种变化的实施例的优点是，与图1的实施例相比，需要一个比较小的金刚石衬底区域，从而使降低制造这样的变换器的成本成为可能。
本发明的变换器可用于控制使用悬链电压(catenary voltage)的轨道车辆的牵引电动机，其模块化的拓扑结构使其能仅仅通过修改金刚石开关的控制而适应不同类型的悬链电压。
显然，本发明并未限制于所示的实施例，这些实施例仅仅是例子。在不脱离本发明保护范围的情况下，可以对本发明进行各种修改，特别是有关各种部件的构造，或使用等同的替代技术。

Claims (10)

1.一种用于在至少一个电压源(1)，特别是一个供电网，和至少一个电流源(2)，特别是一个负载之间转换电能的矩阵变换器，该变换器包括一个开关(6；16)矩阵，将上述电压源(1)与电流源(2)相连，所述矩阵变换器的特征在于：每个所述开关(6；16)有两个端子(5、15)，通过一金刚石(4、14)光电导层互连，各开关(6、16)通过一个光源(7)照射置于开关(6、16)的两个端子(5、15)间的金刚石(4、14)层来控制控制。
2.根据权利要求1的矩阵变换器，其特征在于：所述开关(6、16)矩阵的所述端子(5、15)被置于同一平面上。
3.根据权利要求1或2的矩阵变换器，其特征在于：所述开关(6、16)的金刚石的所述层由金刚石衬底(4、14)通过连续气相沉积钛、铂和金而成。
4.根据权利要求3的矩阵变换器，其特征在于：所述端子(5、15)通过连续气相沉积钛、铂和金金属镀覆所述金刚石衬底(4、14)而形成。
5.根据权利要求3或4的矩阵变换器，其特征在于：所述光源(7)是一个紫外线光源。
6.根据权利要求3到5中任何一个的矩阵变换器，其特征在于：一个单一的金刚石衬底(4)支撑开关(6)矩阵的所有端子(5、15)。
7.根据权利要求1到5中任何一个的矩阵变换器，其特征在于：变换器的各开关(16)由一单个的金刚石衬底(14)形成，该金刚石衬底由一陶瓷基底(13)支撑，所述各金刚石衬底(14)通过一层玻璃(20)与支撑陶瓷基底(13)相接合。
8.根据权利要求7的矩阵变换器，其特征在于：个开关(16)有两个端子(15)通过导体导轨(19)分别与一电压源(1)和一电流源(2)相连，导体导轨由支撑陶瓷基底(13)承载。
9.根据权利要求6或7的矩阵变换器，其特征在于：所述陶瓷基底(13)由氮化铝(AlN)构成。
10.根据权利要求7到9中任何一个的矩阵变换器，其特征在于：所述陶瓷基底(13)有一个与所述支撑导体导轨(19)的面相反的面，该面由流动的冷却液冷却。
CNB031005306A 2002-01-17 2003-01-14 用于转换电能的矩阵变换器 Expired - Fee Related CN1323484C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR0200551A FR2834828B1 (fr) 2002-01-17 2002-01-17 Convertisseur matriciel pour la transformation d'energie electrique
FR0200551 2002-01-17

Publications (2)

Publication Number Publication Date
CN1433130A true CN1433130A (zh) 2003-07-30
CN1323484C CN1323484C (zh) 2007-06-27

Family

ID=8871330

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB031005306A Expired - Fee Related CN1323484C (zh) 2002-01-17 2003-01-14 用于转换电能的矩阵变换器

Country Status (10)

Country Link
US (1) US7170199B2 (zh)
EP (1) EP1331724A3 (zh)
JP (1) JP4087717B2 (zh)
KR (1) KR100695379B1 (zh)
CN (1) CN1323484C (zh)
CA (1) CA2416190A1 (zh)
FR (1) FR2834828B1 (zh)
HK (1) HK1057424A1 (zh)
RU (1) RU2291547C2 (zh)
TW (1) TWI276293B (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105986818A (zh) * 2015-02-28 2016-10-05 中国石油集团长城钻探工程有限公司 双侧向测井仪
CN107240846A (zh) * 2017-08-04 2017-10-10 浙江聚弘凯电气有限公司 用于高压开关设备的连接头结构

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5197321B2 (ja) * 2008-11-20 2013-05-15 株式会社マキタ バンドソー
PL2328264T3 (pl) * 2009-09-29 2012-09-28 Abb Schweiz Ag Przetwornica bezpośrednia oraz system z przetwornicą bezpośrednią tego typu

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3587052A (en) * 1968-10-28 1971-06-22 Tektronix Inc Transistor matrix
JP2934493B2 (ja) * 1990-10-24 1999-08-16 株式会社日立製作所 電子機器の冷却装置
USH1717H (en) * 1995-11-16 1998-04-07 The United States Of America As Represented By The Secretary Of The Navy Bistable photoconductive switches particularly suited for frequency-agile, radio-frequency sources
FR2767605B1 (fr) * 1997-08-25 2001-05-11 Gec Alsthom Transport Sa Circuit integre de puissance, procede de fabrication d'un tel circuit et convertisseur incluant un tel circuit
US6181231B1 (en) * 1998-04-06 2001-01-30 Silicon Graphics, Inc. Diamond-based transformers and power convertors
WO1999067798A2 (en) * 1998-06-05 1999-12-29 Alameda Applied Sciences Corporation Method and apparatus for switching electrical power at high voltages, high currents and high temperatures with rapid turn-on and turn-off at high repetition rates
US6453083B1 (en) * 1999-05-28 2002-09-17 Anis Husain Micromachined optomechanical switching cell with parallel plate actuator and on-chip power monitoring
JP2001006978A (ja) * 1999-06-18 2001-01-12 Matsuo Electric Co Ltd チップコンデンサ
SE9904710L (sv) * 1999-12-22 2001-06-23 Abb Ab Halvledaranordning
DE10005449B4 (de) * 2000-02-08 2008-06-12 Siemens Ag Überspannungsschutzvorrichtung für einen Matrixumrichter
FR2834829B1 (fr) * 2002-01-17 2005-04-29 Alstom Convertisseur matriciel pour la transformation d'energie electrique

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105986818A (zh) * 2015-02-28 2016-10-05 中国石油集团长城钻探工程有限公司 双侧向测井仪
CN107240846A (zh) * 2017-08-04 2017-10-10 浙江聚弘凯电气有限公司 用于高压开关设备的连接头结构

Also Published As

Publication number Publication date
TW200302621A (en) 2003-08-01
KR100695379B1 (ko) 2007-03-15
JP4087717B2 (ja) 2008-05-21
EP1331724A3 (fr) 2004-12-08
TWI276293B (en) 2007-03-11
US7170199B2 (en) 2007-01-30
CA2416190A1 (fr) 2003-07-17
US20030160516A1 (en) 2003-08-28
FR2834828A1 (fr) 2003-07-18
HK1057424A1 (en) 2004-04-02
CN1323484C (zh) 2007-06-27
KR20030063151A (ko) 2003-07-28
EP1331724A2 (fr) 2003-07-30
FR2834828B1 (fr) 2005-04-29
RU2291547C2 (ru) 2007-01-10
JP2003289676A (ja) 2003-10-10

Similar Documents

Publication Publication Date Title
US8094475B2 (en) Inverter with asymmetric clocking and thermally isolated modules
US7505294B2 (en) Tri-level inverter
CN1103073C (zh) 用于数据总线的输入/输出模块
US8937432B2 (en) Light source having LED arrays for direct operation in alternating current network and production method therefor
DE102017220212B4 (de) Halbleitervorrichtung und elektrische Leistungswandlungsvorrichtung
US20040227231A1 (en) Power module with voltage overshoot limiting
US20020118560A1 (en) Substrate-level DC bus design to reduce module inductance
KR20040068218A (ko) 전력 변환 장치
DE69308691D1 (de) Halbleiterbauelement mit reduzierter Schaltinduktanz und Verfahren zu seiner Herstellung
EP0614580B1 (de) Aufbau eines wechselrichters, insbesondere eines 3-punktwechselrichters
EP0750345B1 (de) Leistungs-Halbleitermodul
CN1323484C (zh) 用于转换电能的矩阵变换器
CN1317812C (zh) 用于转换电能的矩阵变换器
CN113853677A (zh) 半导体模块
EP1519455A1 (de) Stromschienenanordnung für Niedervoltlampen und Leuchtdioden
WO2004105220A2 (en) Power module system
CN108702097A (zh) 转换器
CN1211850A (zh) 具有压电变压器的电路装置
RU2003101249A (ru) Матричный преобразователь для преобразования электрической энергии
JP2003532295A (ja) 回路構造
WO2023222220A1 (en) Power converter package with shielding against common mode conducted emissions
CN1155165A (zh) 功率半导体组件系统
CN112424932A (zh) Led装置和照明装置

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
ASS Succession or assignment of patent right

Owner name: ALSTOM TRANSPORT TECHNOLOGY CO., LTD.

Free format text: FORMER OWNER: ALSTOM TRANSP S. A.

Effective date: 20150508

Owner name: ALSTOM TRANSP S. A.

Free format text: FORMER OWNER: ALSTOM

Effective date: 20150508

C41 Transfer of patent application or patent right or utility model
TR01 Transfer of patent right

Effective date of registration: 20150508

Address after: French Levallois Perret

Patentee after: ALSTOM TRANSPORT TECHNOLOGIES

Address before: French Levallois Perret

Patentee before: Alstom Transport S.A.

Effective date of registration: 20150508

Address after: French Levallois Perret

Patentee after: Alstom Transport S.A.

Address before: Paris France

Patentee before: Alstom

CP02 Change in the address of a patent holder

Address after: France 93400 Darren Albert Saint Ouen Street No. 48

Patentee after: ALSTOM TRANSPORT TECHNOLOGIES

Address before: French Levallois Perret

Patentee before: ALSTOM TRANSPORT TECHNOLOGIES

CP02 Change in the address of a patent holder
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20070627

Termination date: 20210114

CF01 Termination of patent right due to non-payment of annual fee