CN1317812C - 用于转换电能的矩阵变换器 - Google Patents

用于转换电能的矩阵变换器 Download PDF

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CN1317812C
CN1317812C CNB031003486A CN03100348A CN1317812C CN 1317812 C CN1317812 C CN 1317812C CN B031003486 A CNB031003486 A CN B031003486A CN 03100348 A CN03100348 A CN 03100348A CN 1317812 C CN1317812 C CN 1317812C
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switch
diamond substrate
matrix converter
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E·迪塔尔特
C·伯耶尔
F·布雷
H·施奈德
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Alstom Transport SA
Alstom Transport Technologies SAS
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Abstract

一种用于在至少一个电压源(1),特别是一个供电网,和至少一个电流源(2),特别是一个负载之间转换电能的矩阵变换器,该变换器包括一个开关矩阵,将上述电压源(1)与电流源(2)相连,所述矩阵变换器的特征在于:每个所述开关有两个置于各自独立的平行平面上的端子,和一个置于所述开关的两个端子之间的光电导金刚石衬底,每个开关通过一个光源(7)照射置于开关的两个端子间的金刚石衬底(4)来控制。

Description

用于转换电能的矩阵变换器
技术领域
本发明涉及一种用于在一个电压源,例如:供电网,和一个电流源,如:一台电动机之间转换电能的矩阵变换器。本发明特别适用于在铁路领域控制牵引式电动机。
背景技术
美国专利申请US 2001/0026427 A1公开了一种矩阵变换器,它包括一个由双向开关构成的3×3的矩阵,用于从一个三相电网向一台异步电动机供电。借助于其模块化的拓扑构造,这种矩阵变换器有这样的优点,即通过适当控制各个开关,它能将一给定的交流(AC)直接转换成一不同电压和不同频率的AC,而不象通常使用的固定结构的变换器那样要求一个AC-DC整流器,一个DC-DC斩波器,和一个DC-AC不间断电源(UPS)相互串联并与滤波电容结合以获得同样的效果。
然而,在这种矩阵变换器中,双向开关由二极管与集成栅双极型晶体管(IGBT)元件结合构成,这就使其不能耐高压,因为大多数目前市场上可得到的鲁棒(robust)IGBT元件的工作电压被限制为大约6.5kV。此外,这样的IGBT元件有一个缺点,即其控制栅必须与其集电极和发射极隔离开,当IGBT元件的各端上的电压高时,就会产生问题。
发明内容
因此,本发明的一个目的是提供一种能在高电压工作而体积紧凑的新型矩阵变换器。本发明的另一个目的是提供一种矩阵变换器,其中开关控制与各开关的端子很自然地隔离开。
为此,本发明提供一种用于在至少一个电压源,特别是一个供电网,和至少一个电流源,特别是一个负载之间转换电能的矩阵变换器,所述变换器包括一个将上述电压源和上述电流源相连的开关矩阵,所述矩阵变换器的特征在于,上述开关中的每一个都有两个被置于各自单独的平行平面上的端子,一个置于所述两个端子之间的光电导金刚石衬底,每个开关都通过一个光源照射插在该开关的两个端子之间的金刚石衬底来进行控制。并且,对于其中每一个开关,光源被设置为面对所述开关的所述两个端子之一,所述端子设置有多个槽,使所述光源的光照能通过并照射到置于所述两个端子之间的所述金刚石衬底。
在特定的实施例中,本发明的矩阵变换器可单独或以任何技术上可行的组合具有下列一个或多个特征:
所述金刚石衬底通过一化学气相沉积法(CVD)获得;
所述端子是利用连续气相沉积钛、铂和金在金刚石衬底上金属镀覆形成的;
所述光源是紫外光源;
对于每一个开关,光源被置于面对开关的两个端子中的一个,所述端子上有至少一个开口,使得所述光源的照射能从中通过,到达置于所述两个端子之间的金刚石衬底;一个单个的金刚石衬底被置于所述开关矩阵的所有端子之间;
变换器的每一个开关由一个单个的金刚石衬底形成,该金刚石衬底由一陶瓷基底支撑,所述单个的金刚石衬底通过一层玻璃与所述支撑陶瓷基底接合;
各开关有一个端子通过置于所述陶瓷基底的一个面上的导体导轨(conductor tracks)与一电压源相连,另一个端子通过由所述陶瓷基底的相反面承载的导体导轨与一电流源相连。
参照附图阅读对下列两个以非限制性示例形式给出的实施例的描述,将会更好地理解本发明的目的,特点和优点。
附图简述
图1是本发明一个特定实施例的矩阵变换器的透视图;
图2是图1变换器的简化的透视图,示出了输入连接线和输出连接线
附图说明
图1是本发明一个特定实施例的矩阵变换器的透视图;
图2是图1变换器的简化的透视图,示出了输入连接线和输出连接线是如何在金刚石衬底上组装的;
图3是装备图1变换器的金刚石开关的截面的细节;
图4是图3开关的透视的细节;
图5是本发明变换器一个变化的实施例的矩阵变换器的顶视透视图;
图6是图5变换器的底视透视图;
图7是图5和图6变换器的金刚石开关的透视的细节;
图8是图7开关沿VIII-VIII的截面细节。
为了清楚起见,仅示出了有助于理解本发明的那些部件。在附图中,相同的部件使用相同的参考号。为进一步清楚起见,变换器的某些部件只给出了细节。
具体实施方式
图1示出了本发明矩阵变换器的一个特定实施例。该矩阵变换器有三个输入连接线1和三个输出连接线2,输入连接线1,例如:将由一个三相电网供电,而输出连接线2,例如:将向一台异步电动机供能。
如图所示,矩阵变换器包括一个由塑料材料制成的,边长为150毫米(mm),基本上是方形的基底3,其中央有一个孔,穿通基底3的两个面,并接受一个光电导金刚石衬底4。金刚石衬底4利用化学气相沉积法(CVD)通过已知方法制造。
金刚石衬底4有一个上表面与三个输入连接线1接触,所述连接线由平行设置的相应的导体棒构成。每一个输入连接线1的形状通常是面对金刚石衬底的直线形,其上有三个环形部分1a,以至三个输入连接线的环形部分1a被排列成3×3的矩阵。
如图2所示(图2中仅示出了输入连接线1,输出连接线2和金刚石衬底4),金刚石衬底4的底面与三个输出连接线22接触,连接线2由三个平行设置的、与三个输入连接线1垂直的相应的导体棒构成。每一个输入连接线2的形状通常是面对金刚石衬底的直线形,其上有三个圆盘突出部分9,以使圆盘9与置于金刚石衬底4(在图2中以电划线表示)相反一面上的输入连接线1的相应环形1a对齐。
图3和图4更详细地示出了装备矩阵变换器的金刚石开关6的构造。如这些图中所示,每个环形部分1a的中央具有一开口,在开口上,盖有一金属镀覆的端子5(仅在这些图中示出)。金属镀覆的端子5通过接合在邻近环形部分1a上的铝线21与输入连接线1电气连接,端子5和在金刚石衬底4反面的圆盘9相互对齐,形成金刚石开关6的两个端子。
例如:金属镀覆的端子5可以通过包括下列步骤的金属镀覆方法在金刚石衬底4上获得:
在金刚石衬底的上表面上沉积光敏树脂;
在要进行金属镀覆的区域,通过一掩膜将上述树脂暴露在光照之下而除去树脂;
在部分由树脂覆盖的金刚石衬底的表面上,利用连续气相沉积钛、铂和金进行金属镀覆;
将金刚石衬底浸入丙酮中除去剩余的树脂。
两个端子5和9间的电传导根据指令,通过接通置于面对端子5的紫外光源7而获得,端子5具有多个未金属镀覆的槽5a,槽5a为环形弧状,并使光源7的光照能通过它们,以便照射金刚石开关6的端子5和9之间的金刚石4的体积,从而,引起电在所述两端子间传导。光源7最好由图1中点划线所示的且安装在腿8上的板22支撑,腿8由基底3的上表面承载,并且它们由构成变换器的控制电路的控制电路分别独立控制。
这种矩阵变换器提供这样的优点,即具有能耐其端子上高电压的金刚石开关,并且该开关能自然地使电能通过变换器在两个方向中的任意一个方向流动。此外,这样的变换器通过光学控制金刚石开关来进行控制,这种控制使其能自然地与开关端子上的电位隔离。最后,由于其拓扑结构通过光控模块化,该矩阵变换器使任何变换成为可能,例如:单相或三相直接AC-AC变换,AC-DC变换,或当与一DC电源相连时,DC-DC变换。
图5至图8示出了本发明变换器的一个变化的实施例,相应于一个优选实施例。如图5和图6所示,矩阵变换器包括一由氮化铝(AlN)构成的陶瓷基底13,其上有9个以3×3矩阵形式分布的环形洞,每个洞都在陶瓷基底13的各面张开,并接收柱状金刚石衬底14,其直径约10毫米,周围被玻璃区域20包围。
玻璃区域20可以充有陶瓷,形成金刚石衬底14与陶瓷基底13的界面,其优点是膨胀系数a接近3.5,使其能衰减由于金刚石(a=1)和AlN基底(a=4.5)之间不同的膨胀引起的力。
如图5所示,陶瓷基底13的上表面有三个输入连接线1从陶瓷基底13的一个边缘突出,并且由平行设置的各自的导体导轨11延伸,每一导轨11与金刚石衬底14的3×3矩阵的一行对准。每个导体导轨11包括三个圆环形部分11a,沿三个金刚石衬底14的相应一个的周边延伸,与输入连接线1对准。
如图6所示,陶瓷基底13的底面上有三个输出连接线2,与输入连接线1成垂直角度设置,并从陶瓷基底13的一个边缘向外突出。三个输出连接线2在陶瓷基底13通过各自的导体轨道12相互平行延伸布置,每个轨道12与构成金刚石衬底14的3×3矩阵的一列对准。输出连接线2的每一个导体轨道包括三个圆形部分12a,沿三个金刚石衬底14的相应一个的周边延伸,与输入连接线2对准。
如图7和图8所示,每一个金刚石衬底14有一个上表面和一个底面,分别基本上被金属镀覆的端子15和19所覆盖,上端子15和下端子19(仅在这些图中示出)构成金刚石开关的两个端子。例如:这样的金属镀覆的端子15和19可以通过包括下列步骤的金属镀覆法在金刚石衬底14上得到:
在金刚石衬底的上表面上沉积光敏树脂;
在要进行金属镀覆的区域,通过一掩膜将上述树脂暴露在光照之下而除去树脂;
在部分由树脂覆盖的金刚石衬底的表面上,利用连续气相沉积钛、铂和金进行金属镀覆;
将金刚石衬底浸入丙酮中除去剩余的树脂。
金刚石衬底14的上端子15经一铝线21与置于金刚石衬底14的周边的导体轨道11的圆形部分11a相连,金刚石衬底14的下端子19经一铝线21(图7中以点划线示出)与置于金刚石衬底14的周边的导体轨道12的圆形部分12a相连。
参见图7,金刚石衬底14的上端子15的中心提供有多个未金属镀覆的槽15a,槽15a为环形弧状,并使置于面对金刚石衬底14的光源7的紫外辐射光照能通过它们,以便照射上端子15和下端子19之间的金刚石衬底14的体积,从而,引起电在所述两端子间传导。光源7最好由安装在腿8上的板22(图中未示出)支撑,腿8由基底13的上表面承载,并且它们由构成变换器的控制电路的控制电路分别独立控制。
这样一种变化的实施例的优点是,与图1的实施例相比,需要一个比较小的金刚石衬底区域,从而使降低制造这样的变换器的成本成为可能。
不考虑本发明的实施例的变化,金刚石衬底(例如:由CVD方法制成)的厚度可与变换器的工作电压适应,可以是,例如:从50μm到200μm,50μm用于耐金刚石衬底两个表面间约5kV的电压,而200μm用于耐约20kV的电压。
本发明的变换器可用于控制使用悬链电压(catenary voltage)的轨道车辆的牵引电动机,其模块化的拓扑结构使其能仅仅通过修改金刚石开关的控制而适应不同类型的悬链电压。
显然,本发明并未限制于所示的实施例,这些实施例仅仅是例子。在不脱离本发明保护范围的情况下,可以对本发明进行各种修改,特别是有关各种部件的构造,或使用等同的替代技术。

Claims (10)

1.一种用于在至少一个电压源,和至少一个电流源之间转换电能的矩阵变换器,该变换器包括一个开关(6;16)矩阵,将上述电压源与电流源相连,所述矩阵变换器的特征在于:每个所述开关(6;16)有两个置于各自独立的平行平面上的端子(5、9;15、19),和一个置于所述开关(6,16)的两个端子(5、9;15、19)之间的光电导金刚石衬底,每个开关(6,16)通过一个光源(7)照射置于开关(6、16)的两个端子(5、9;15、19)间的金刚石衬底(4、14)来控制,
并且,其中,对于每一个开关(6,16),所述光源(7)被设置成面对所述开关的所述两个端子(5、9;15、19)之一,所述端子(5,15)设置有多个槽(5a,15a),使所述光源(7)的光照能通过所述槽并照射到置于所述两个端子(5、9;15、19)之间的所述金刚石衬底(4,14)。
2.根据权利要求1的矩阵变换器,其特征在于:所述金刚石衬底(4、14)由化学气相沉积方法获得。
3.根据权利要求2的矩阵变换器,其特征在于:所述端子(5,19)通过连续气相沉积钛、铂和金来金属镀覆所述金刚石衬底而形成。
4.根据权利要求1-3中任何一个的矩阵变换器,其特征在于:所述光源(7)是一个紫外线光源。
5.根据权利要求1的矩阵变换器,其中所述多个槽为未金属镀覆的圆弧形状的多个槽。
6.根据权利要求1的矩阵变换器,其特征在于:一个单个的金刚石衬底(4)被置于开关(6)矩阵的所有端子(5,9)之间。
7.根据权利要求1的矩阵变换器,其特征在于:变换器的各开关(16)由一单个的金刚石衬底(14)形成,该金刚石衬底由一陶瓷基底(13)支撑,所述单个金刚石衬底(14)通过一层玻璃(20)与支撑陶瓷基底相接合。
8.根据权利要求7的矩阵变换器,其特征在于:每个开关(16)有一个端子(15)通过置于陶瓷基底(13)的一个表面上的导体导轨(11)与一电压源相连,另一个端子(19)通过由陶瓷基底(13)反面承载的导体导轨(12)与一电流源相连。
9.根据权利要求7的矩阵变换器,其特征在于:所述陶瓷基底(13)由氮化铝AlN构成。
10.根据权利要求1的矩阵变换器,其中所述电压源是供电网,所述电流源是负载。
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Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1999067798A2 (en) * 1998-06-05 1999-12-29 Alameda Applied Sciences Corporation Method and apparatus for switching electrical power at high voltages, high currents and high temperatures with rapid turn-on and turn-off at high repetition rates
US20010026427A1 (en) * 2000-02-08 2001-10-04 Siemens Ag. Overvoltage protection apparatus for a matrix converter

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WO1999067798A2 (en) * 1998-06-05 1999-12-29 Alameda Applied Sciences Corporation Method and apparatus for switching electrical power at high voltages, high currents and high temperatures with rapid turn-on and turn-off at high repetition rates
US20010026427A1 (en) * 2000-02-08 2001-10-04 Siemens Ag. Overvoltage protection apparatus for a matrix converter

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