CN1317812C - 用于转换电能的矩阵变换器 - Google Patents
用于转换电能的矩阵变换器 Download PDFInfo
- Publication number
- CN1317812C CN1317812C CNB031003486A CN03100348A CN1317812C CN 1317812 C CN1317812 C CN 1317812C CN B031003486 A CNB031003486 A CN B031003486A CN 03100348 A CN03100348 A CN 03100348A CN 1317812 C CN1317812 C CN 1317812C
- Authority
- CN
- China
- Prior art keywords
- switch
- diamond substrate
- matrix converter
- converter
- terminals
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000011159 matrix material Substances 0.000 title claims abstract description 42
- 229910003460 diamond Inorganic materials 0.000 claims abstract description 67
- 239000010432 diamond Substances 0.000 claims abstract description 67
- 239000000758 substrate Substances 0.000 claims abstract description 61
- 239000000919 ceramic Substances 0.000 claims description 17
- 238000001465 metallisation Methods 0.000 claims description 15
- 239000004020 conductor Substances 0.000 claims description 11
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 8
- 238000005286 illumination Methods 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 5
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 4
- 230000008021 deposition Effects 0.000 claims description 4
- 229910052697 platinum Inorganic materials 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- 239000010936 titanium Substances 0.000 claims description 4
- 229910017083 AlN Inorganic materials 0.000 claims description 3
- 239000011521 glass Substances 0.000 claims description 2
- 239000007792 gaseous phase Substances 0.000 claims 1
- 239000000126 substance Substances 0.000 claims 1
- 230000001678 irradiating effect Effects 0.000 abstract 1
- 239000011347 resin Substances 0.000 description 10
- 229920005989 resin Polymers 0.000 description 10
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 229910000831 Steel Inorganic materials 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000010959 steel Substances 0.000 description 3
- 230000002457 bidirectional effect Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000008676 import Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M11/00—Power conversion systems not covered by the preceding groups
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/78—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/45124—Aluminium (Al) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
- H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
- H01L2224/49111—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49175—Parallel arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
- H01L2924/097—Glass-ceramics, e.g. devitrified glass
- H01L2924/09701—Low temperature co-fired ceramic [LTCC]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Ac-Ac Conversion (AREA)
- Power Conversion In General (AREA)
- Inverter Devices (AREA)
- Electronic Switches (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Vessels And Coating Films For Discharge Lamps (AREA)
Abstract
Description
Claims (10)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0200552 | 2002-01-17 | ||
FR0200552A FR2834829B1 (fr) | 2002-01-17 | 2002-01-17 | Convertisseur matriciel pour la transformation d'energie electrique |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1433129A CN1433129A (zh) | 2003-07-30 |
CN1317812C true CN1317812C (zh) | 2007-05-23 |
Family
ID=8871331
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB031003486A Expired - Fee Related CN1317812C (zh) | 2002-01-17 | 2003-01-15 | 用于转换电能的矩阵变换器 |
Country Status (11)
Country | Link |
---|---|
US (1) | US6781854B2 (zh) |
EP (1) | EP1329954B1 (zh) |
JP (1) | JP4087718B2 (zh) |
KR (1) | KR100967251B1 (zh) |
CN (1) | CN1317812C (zh) |
CA (1) | CA2416193C (zh) |
ES (1) | ES2625771T3 (zh) |
FR (1) | FR2834829B1 (zh) |
HK (1) | HK1057425A1 (zh) |
RU (1) | RU2298858C2 (zh) |
TW (1) | TWI276292B (zh) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2834828B1 (fr) * | 2002-01-17 | 2005-04-29 | Alstom | Convertisseur matriciel pour la transformation d'energie electrique |
PL2360819T3 (pl) * | 2010-02-11 | 2012-11-30 | Abb Schweiz Ag | Aktywne tłumienie harmonicznych prądu w wielostopniowej przetwornicy |
CN102707180A (zh) * | 2012-06-28 | 2012-10-03 | 南京南车浦镇城轨车辆有限责任公司 | 一种轨道车辆电气元件地面测试装置及其测试方法 |
TWD204008S (zh) * | 2019-03-22 | 2020-04-11 | 晶元光電股份有限公司 | 發光裝置之部分 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1999067798A2 (en) * | 1998-06-05 | 1999-12-29 | Alameda Applied Sciences Corporation | Method and apparatus for switching electrical power at high voltages, high currents and high temperatures with rapid turn-on and turn-off at high repetition rates |
US20010026427A1 (en) * | 2000-02-08 | 2001-10-04 | Siemens Ag. | Overvoltage protection apparatus for a matrix converter |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US26427A (en) * | 1859-12-13 | Improvement in preserving flesh and meats | ||
JPH09252119A (ja) * | 1996-03-15 | 1997-09-22 | Rohm Co Ltd | 半導体装置 |
US6140715A (en) * | 1998-11-06 | 2000-10-31 | Asea Brown Boveri Ab | Electric switching device and a method for performing electric disconnection of a load |
FR2786655B1 (fr) * | 1998-11-27 | 2001-11-23 | Alstom Technology | Dispositif electronique de puissance |
-
2002
- 2002-01-17 FR FR0200552A patent/FR2834829B1/fr not_active Expired - Fee Related
-
2003
- 2003-01-07 ES ES03290028.4T patent/ES2625771T3/es not_active Expired - Lifetime
- 2003-01-07 EP EP03290028.4A patent/EP1329954B1/fr not_active Expired - Fee Related
- 2003-01-13 TW TW092100613A patent/TWI276292B/zh not_active IP Right Cessation
- 2003-01-13 US US10/340,724 patent/US6781854B2/en not_active Expired - Lifetime
- 2003-01-14 CA CA002416193A patent/CA2416193C/fr not_active Expired - Fee Related
- 2003-01-14 JP JP2003005352A patent/JP4087718B2/ja not_active Expired - Fee Related
- 2003-01-15 CN CNB031003486A patent/CN1317812C/zh not_active Expired - Fee Related
- 2003-01-16 RU RU2003101200/09A patent/RU2298858C2/ru not_active IP Right Cessation
- 2003-01-16 KR KR1020030002851A patent/KR100967251B1/ko active IP Right Grant
-
2004
- 2004-01-10 HK HK04100187A patent/HK1057425A1/xx not_active IP Right Cessation
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1999067798A2 (en) * | 1998-06-05 | 1999-12-29 | Alameda Applied Sciences Corporation | Method and apparatus for switching electrical power at high voltages, high currents and high temperatures with rapid turn-on and turn-off at high repetition rates |
US20010026427A1 (en) * | 2000-02-08 | 2001-10-04 | Siemens Ag. | Overvoltage protection apparatus for a matrix converter |
Also Published As
Publication number | Publication date |
---|---|
CA2416193C (fr) | 2009-08-18 |
HK1057425A1 (en) | 2004-04-02 |
RU2298858C2 (ru) | 2007-05-10 |
CN1433129A (zh) | 2003-07-30 |
KR100967251B1 (ko) | 2010-07-01 |
JP2003289677A (ja) | 2003-10-10 |
EP1329954B1 (fr) | 2017-03-15 |
CA2416193A1 (fr) | 2003-07-17 |
JP4087718B2 (ja) | 2008-05-21 |
ES2625771T3 (es) | 2017-07-20 |
KR20030063152A (ko) | 2003-07-28 |
TW200302620A (en) | 2003-08-01 |
US6781854B2 (en) | 2004-08-24 |
US20030156432A1 (en) | 2003-08-21 |
FR2834829B1 (fr) | 2005-04-29 |
TWI276292B (en) | 2007-03-11 |
EP1329954A1 (fr) | 2003-07-23 |
FR2834829A1 (fr) | 2003-07-18 |
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C14 | Grant of patent or utility model | ||
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Owner name: ALSTOM TRANSP S. A. Free format text: FORMER OWNER: ALSTOM Effective date: 20150511 Owner name: ALSTOM TRANSPORT TECHNOLOGY CO., LTD. Free format text: FORMER OWNER: ALSTOM TRANSP S. A. Effective date: 20150511 |
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C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20150511 Address after: French Levallois Perret Patentee after: ALSTOM TRANSPORT TECHNOLOGIES Address before: French Levallois Perret Patentee before: Alstom Transport S.A. Effective date of registration: 20150511 Address after: French Levallois Perret Patentee after: Alstom Transport S.A. Address before: Paris France Patentee before: Alstom |
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CP02 | Change in the address of a patent holder |
Address after: France 93400 Darren Albert Saint Ouen Street No. 48 Patentee after: ALSTOM TRANSPORT TECHNOLOGIES Address before: French Levallois Perret Patentee before: ALSTOM TRANSPORT TECHNOLOGIES |
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CP02 | Change in the address of a patent holder | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20070523 Termination date: 20210115 |
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CF01 | Termination of patent right due to non-payment of annual fee |