CN1417848A - 具挑高柱身的金属凸块的制作方法及其制作装置 - Google Patents

具挑高柱身的金属凸块的制作方法及其制作装置 Download PDF

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CN1417848A
CN1417848A CN01136874A CN01136874A CN1417848A CN 1417848 A CN1417848 A CN 1417848A CN 01136874 A CN01136874 A CN 01136874A CN 01136874 A CN01136874 A CN 01136874A CN 1417848 A CN1417848 A CN 1417848A
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capillary
metal
neck
metal wire
endoporus
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谢文乐
庄永成
黄宁
陈慧萍
蒋华文
张衷铭
涂丰昌
黄富裕
张轩睿
胡嘉杰
吕文隆
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HUATAI ELECTRONICS CO Ltd
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    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
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    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
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Abstract

一种具挑高柱身的金属凸块的制作方法及其制作装置，该装置主要具有中央贯穿的内径及内壁部的硬管状焊针，焊针内壁部断面为底部较宽的微锥柱状：本发明的方法是：当焊针内的金属线末端烧结成球状时，用超声波振动及加压改变引线垫金属表面而促使金属接合；因该焊针硬管内壁部断面为底部较宽的微锥状，金属线在内壁部填满后与芯片引线垫接合并成为钟状金属凸块，而钟状金属凸块的底部可形成凸缘座，有助于稳定金属凸块；钟状金属凸块具有较高的柱身，并因本发明焊针内部断面形状的设计，使金属凸块的柱身高度可轻易、准确地加高，有助于芯片与基板间接合间距的增加；当金属凸块上焊锡球时，本发明可防止该锡球接触铝制的引线垫，影响接合的可靠度。

Description

具挑高柱身的金属凸块的制作方法及其制作装置
技术领域
本发明涉及一种芯片上的金属凸块的制作方法及其制作装置。
背景技术
芯片上的金属凸块及其制作装置(见图1所示)主要是在该焊针内壁部装填金属线的位置设一钟状造形，使形成的该金属凸块限定在该钟形开口范围内，可制作出更细小的金属凸块并因该金属凸块的底面外围设有一凸缘座，能增加金属凸块与芯片引线垫的结合度，而此焊针可作出钟形金属凸块，此形状的金属凸块可提供一较挑高的柱身，使将来焊上锡球后与其他基板或芯片的接合性更优异。
而由于焊针内部因呈钟形断面，因此由该焊针制作成形的金属凸块仅被限定在该钟形断面的高度内，无法依实际需要作高度的变更调整。
发明内容
为了克服现有技术的不足，本发明的目的在于提供一种具挑高柱身的金属凸块的制作方法及其制作装置，其可依需要调整该焊针内部的金属线扯断时间，以作出不同柱身高度的金属凸块。
为了达到上述目的，本发明提供了一种具挑高柱身的金属凸块的制作方法，先在该焊针内孔内置入金属线，在该金属线位于焊针内壁部的下颈部位置的末端点火烧结成球；在焊针靠近芯片引线垫的适当位置时，在球状金属线接触引线垫后予以适当载荷，并辅以超声波振动与加热，使该金属线变形而填满整个内壁部的下缘；待适当时间后移走该焊针，并由该下颈部的颈部扯断该金属线的再结晶区而留下一钟状金属凸块。
本发明还提供了一种具挑高柱身的金属凸块的制作装置，其为一中心设有内孔的锥形硬管构成的焊针，所述内孔微呈锥孔状，即内孔的下颈部的内径稍大于上颈部的内径。
所述下颈部设有倒角。
本发明的优点是：本发明可形成接触面积更细小的金属凸块，提升金属凸块的柱身高度，增加该金属凸块与芯片引线垫间的焊接力，使金属凸块与锡球的接触面积扩大，使金属凸块具有更好的焊接力，并可有限度地调整金属凸块的柱身。并因本发明焊针内部断面形状的设计，使金属凸块的柱身高度可轻易、准确地加高，有助于芯片与基板间接合间距的增加；当金属凸块上焊锡球时，本发明可防止该锡球接触铝制的引线垫，影响接合的可靠度。
附图说明
下面结合附图及实施例对本发明进行详细说明：
图1是现有焊针结构示意图；
图2是本发明的焊针结构示意图；
图3A是本发明的金属线烧结成球示意图；
图3B是图3A的金属线与芯片接合示意图；
图3C是图3B的扯断金属线而留下凸块形状；
图4A～4B是公知金属凸块与锡球接合示意图；
图5A～5B是本发明的金属凸块与锡球接合示意图。
图中符号说明：
现有技术部份
1’     芯片
11’    引线垫
2’     焊针
20’    硬管
21’    内径
22’    内壁部
3’     金属线
31’    球
32’    凸块
33’    焊接接触面积
4’     锡球
5’    基板焊接引线垫
6’    接触面
本发明部份：
1      芯片
11     引线垫
2      焊针
20     硬管
21     内径
22     内壁部
23     下颈部
231    倒角
24     上颈部
3      金属线
31     球
32     金属凸块
321    凸缘座
33     焊接接触面积
4      锡球
5      基板焊接引线垫
具体实施方式
请参照图2所示，本发明的制作装置是在一坚固的锥形硬管20构件中心设一内径21，该内径21微呈锥孔状的焊针2，即该焊针2内径21、下方的内壁部22是以下颈部23内径稍大于上颈部24的结构来设计。
续请参照图3A-图3C依据上述的装置，本发明的制造方法是：先在该焊针2的内径21内穿入金属线3，该金属线3的未端位于焊针20内壁部22的下颈部23位置处点火熔融烧结成球31，并在焊针2的球状金属线3接触芯片1引线垫11时加以适当的载荷、并辅以超声波振动与加热，使该金属线3产生变形而填满整个内壁部23的下缘，待时间算对后移走该焊针2，由该下颈部23的颈部再结晶区扯断该金属线3，留下一钟状金属凸块32。
由于本发明的毛细管2内壁面22的下颈部23处设有倒角231结构以及底面与水平呈一特殊角可根据不同应用设计适当大小，使由本焊针2作出的金属凸块32底部面积在该焊针2靠近该引线垫11时可形成在金属凸块32底部凸出的凸缘座321。
由本发明的焊针2作出的金属凸块32具有挑高柱身232，可提升与芯片1引线垫11间的焊接力、并能使将来金属凸块32与锡球4的接触面积33扩大，能有更好的焊接力，而当本发明与锡球4接合后(如图4A-图5所示)，由于加热的锡球4受基板焊接引线垫5(如金手气指、导线架，金属凸块等)压迫作用而变形，使该变形的锡球4会稍往下扩散，此时将会被本发明的金属凸块32凸缘座321阻挡住而不溢到引线垫11的部位；此可改善现有技术(如图5A-图5B中)结合时，该加热的锡球4’被基板焊接引线垫5’(如金手指，导线架，金属凸块等)下压变形后，该锡球4’会溢至芯片1’上的引线垫11’，盖因该引线垫11’、凸块32’与锡球4’的金属特性使然，原本的设计是引线垫11’与金凸块32’接合；而金凸块32’与锡球4’接合可呈最稳定的状态，若该锡球4’溢至铝质的引线垫11’时，其金属接合的匹配度就变差，而本发明中可完全避免此情形的发生。
由上所述，本发明已符合发明专利的要求，特依法提请发明专利的请求，而虽然本发明以较佳实施例公开如上，然其并非用以限定本发明，任何本领域技术人员在不脱离本发明的精神和范围内，当可作各种更动与润饰，因此本发明的保护范围应以权利要求书并结合说明书及附图所界定者为准。

Claims (3)

1、一种具挑高柱身的金属凸块的制作方法，其特征在于：
先在该焊针内孔内置入金属线，在该金属线位于焊针内壁部的下颈部位置的末端点火烧结成球；
在焊针靠近芯片引线垫的适当位置时，在球状金属线接触引线垫后予以适当载荷，并辅以超声波振动与加热，使该金属线变形而填满整个内壁部的下缘；
待适当时间后移走该焊针，并由该下颈部的颈部扯断该金属线的再结晶区而留下一钟状金属凸块。
2、一种用于权利要求1所述方法的装置，其为一中心设有内孔的锥形硬管构成的焊针，其特征在于：所述内孔微呈锥孔状，即内孔的下颈部的内径稍大于上颈部的内径。
3、根据权利要求所述2所述的装置，其特征在于：所述下颈部设有倒角。
CN01136874A 2001-11-02 2001-11-02 具挑高柱身的金属凸块的制作方法及其制作装置 Pending CN1417848A (zh)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8053906B2 (en) 2008-07-11 2011-11-08 Advanced Semiconductor Engineering, Inc. Semiconductor package and method for processing and bonding a wire
US8110931B2 (en) 2008-07-11 2012-02-07 Advanced Semiconductor Engineering, Inc. Wafer and semiconductor package

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8053906B2 (en) 2008-07-11 2011-11-08 Advanced Semiconductor Engineering, Inc. Semiconductor package and method for processing and bonding a wire
US8110931B2 (en) 2008-07-11 2012-02-07 Advanced Semiconductor Engineering, Inc. Wafer and semiconductor package

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