CN1405801A - Multilayer balanced inductor - Google Patents
Multilayer balanced inductor Download PDFInfo
- Publication number
- CN1405801A CN1405801A CN 02147925 CN02147925A CN1405801A CN 1405801 A CN1405801 A CN 1405801A CN 02147925 CN02147925 CN 02147925 CN 02147925 A CN02147925 A CN 02147925A CN 1405801 A CN1405801 A CN 1405801A
- Authority
- CN
- China
- Prior art keywords
- inductance
- line segment
- conducting line
- insulating barrier
- straight line
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Landscapes
- Coils Or Transformers For Communication (AREA)
Abstract
The steps for manufacturing the inductance by using the IC technique are as follows. The inductance comprises one base plate, one first insulation layer, one second insulation layer, one first wire section, one second wire section, one third wire section and one fourth wire section. The first wire section and the second wire section are symmetric to the first straight line. The third wire section and the fourth wire section are symmetric to the said first straight line also. The first end of the first wire section through the bullet connection of the first media layer is connected to the first end of the fourth wire section. The first end of the second wire section through the bullet connection of the second media layer is connected to the first end of the third wire section.
Description
Technical field
The invention provides a kind of inductance, the multilayer symmetrical expression inductance of particularly a kind of semiconductor integrated circuit technology manufacturing.
Background technology
Progress along with semiconductor technology, under the requirement of low cost, small size, the wireless telecommunications chip must be incorporated into traditional passive (passive) element on the one chip as inductance (inductor), transformer (transformer), electric capacity (capacitor) etc. as far as possible.Inductance on the chip can be used in the Wireless IC design, as low noise amplifier (1ow noise amplifier, LNA), frequency mixer (mixer), voltage controlled oscillator (voltage controlled oscillator, VCO), impedance matching network and filter etc.
Please refer to Fig. 1, Fig. 1 is the schematic diagram of conventional planar helical form inductance 10.As shown in Figure 1, one conductor coils forms inductance 10 on a plane, inductance 10 comprises two end points P1 and P2, with 1: 0 is central point, begin in spiral helicine mode along a required number of turns of O Indian club circle inwards by end points P1, because the conductor coils of inductance 10 cannot be overlapping, so the overlapping part of conductor coils must be connected to another conductor layer by an interlayer connector (via plug) among Fig. 1, picked out by end points P2 at last.The shortcoming of conventional planar spiral inductance 10 maximums needs very large chip area exactly, and this will increase the cost of chip, also makes to seem unactual and infeasible in the chip if big inductance will be integrated in.In addition, the quality factor of inductance 10 and the resistance value of this conductor coils are inversely proportional to, that is to say, the length of this conductor coils is long more, resistance value is also just big more, make the energy loss of inductance 10 strengthen, cause the quality factor variation of inductance 10, and be not easy to be applied among the design of Wireless IC.
Please refer to Fig. 2, Fig. 2 is the schematic diagram of traditional double laminar spiral inductance 12.In order to save area of chip, as shown in Figure 2, use the double-layer conductor coil to design inductance 12.Inductance 12 comprises two end points P1 and P2, with a straight line C is central shaft, by P1 end beginning in spiral helicine mode along straight line C ecto-entad around the required number of turns, then be connected to another conductor layer by an interlayer connector, still with straight line C be central shaft from inside to outside around the required number of turns, pick out by end points P2 at last.It should be noted that, electric current should be consistent at the flow direction of this two-layer conductor coils, to increase the mutual inductance effect between the inductance 12, that is to say, electric current flows into from end points P1, flow with clockwise direction ecto-entad, enter after the second layer via this interlayer connector, same flows out from end points P2 from inside to outside with clockwise direction.
Use the designed inductance 12 of double-layer conductor coil can significantly reduce chip area, and improve mutual inductance effect between the upper and lower two-layer conductor coils, under identical chip area, its inductance value is about 2 to 4 times of individual layer inductance 10, in other words, under identical inductance value, 12 of double-deck inductance need 1/2 to 1/4 chip area of individual layer inductance 10.In addition, double-deck inductance 12 only need use short loop length can reach the inductance value identical with individual layer planar inductor 10, and the short loop length then resistance value of its conductor coils is also lower, so use double-deck inductance 12 can improve the quality factor of inductance.Though the chip area that double-deck inductance 12 uses is less, inductance quality factor are preferably also arranged, but because increasing wireless telecommunications chip adopts the design of difference channel, to reduce the interference of common-mode noise, so the inductance that is applied in the difference channel often needs to possess symmetrical character, to eliminate common-mode noise.It is all identical that so-called symmetry refers to the induction structure of seeing from arbitrary end at inductance two ends, and two of inductance 12 end points P1 and P2 be obviously and asymmetric among Fig. 2, if this makes inductance 12 be applied on the difference channel, then can't effectively suppress the interference of common-mode noise to circuit.
From the above, traditional planar spiral inductor 10 expends bigger chip area, increase the cost of chip, and its resistance value of long more conductor coils is also big more, makes the energy loss of inductance 10 strengthen, and causes the quality factor variation of inductance.Though if use the problems such as quality factor that double-layer spiral inductance 12 can improve chip area and inductance 12 instead, but because the induction structure of traditional double-layer spiral inductance 12 and asymmetric, if make inductance 12 be applied on the difference channel, can't effectively suppress the interference of common-mode noise to circuit.
Summary of the invention
Therefore main purpose of the present invention provides the multilayer symmetrical expression inductance of a kind of semiconductor integrated circuit technology manufacturing, to address the above problem.
Claim of the present invention provides a kind of inductance, and it comprises a substrate, one first insulating barrier, one second insulating barrier, one first conducting line segment, one second conducting line segment, a privates section, a privates section.This first conducting line segment and this second conducting line segment are symmetrical in one first straight line, this privates section and this privates section also are symmetrical in this first straight line, first end of this first conducting line segment is first end that is connected to this privates section via one first interlayer connector, and first end of this second conducting line segment is first end that is connected to this privates section via one second interlayer connector.
Description of drawings Fig. 1 is the schematic diagram of conventional planar helical form inductance.Fig. 2 is the schematic diagram of traditional double laminar helical form inductance.Fig. 3 is the schematic diagram of the double-deck symmetrical expression inductance of the present invention.Fig. 4 is the profile of the inductance of Fig. 3 along tangent line 4-4.Fig. 5 is the top view of the inductance upper coil of Fig. 3.Fig. 6 is the top view of the inductance inner coil of Fig. 3.Fig. 7 is the schematic diagram of three layers of symmetrical expression inductance of the present invention.Fig. 8 is the profile of the inductance of Fig. 7 along tangent line 8-8.10 1211 1314 1516 1718 2022 2426 2830 3234 3638 4042 4446 4850 5254 5658 6062 6466 6870 7274 7678 80
Embodiment
Please refer to Fig. 3, Fig. 3 is the schematic diagram of the double-deck symmetrical expression inductance 14 of the present invention.As shown in Figure 3, inductance 14 comprises a upper coil 11 and reaches layer line circle 13, and each layer line circle all has three circles.Inductance 14 comprises two end points P1 and P2 in addition, and wherein P1 and P2 are symmetrical along the dotted line L of centre.Inductance 14 can be divided into first group of coil 15 again and 17, the first groups of coils 15 of second group of coil are by end points P1 to TAP point, and second group of coil 17 is to end points P2 by the TAP point.In upper coil 11, electric current enters from the P1 end points of first group of coil 15, flow with counterclockwise direction, shown in the arrow among the figure, electric current is every promptly to flow to inner ring through behind the half-turn of conductor coils, until electric current enters after the inner ring, be connected to the inner ring of first group of coil 15 of inner coil 13 again by the end of inner ring, and the every half-turn through conductor coils of after-current flows to the outer ring immediately, up to outmost turns be used for the demarcating TAP point of first group of coil 15 and second group of coil 17, follow the outmost turns that electric current enters second group of coil 17 of inner coil 13, this moment, electric current was flowed toward inner ring by the outer ring with counterclockwise direction, every half-turn through conductor coils is promptly changed to inner ring, up to inner ring, is connected to the inner ring of second group of coil 17 of upper coil 11 again by the end of inner ring, electric current is flowed toward the outer ring by inner ring with counterclockwise direction at second group of coil 17 of upper coil 11, every half-turn through conductor coils is promptly changed to the outer ring, up to outmost turns, is flowed out by end points P2 at last.
Please refer to Fig. 4, Fig. 4 is the profile of the inductance of Fig. 3 along tangent line 4-4.As shown in Figure 4, on semiconductor substrate 16, form the double-deck symmetrical expression inductance 14 of the present invention, have an insulating barrier 18 to isolate between inductance 14 and the substrate 16, and the upper coil 11 of inductance 14 and inner coil 13 are to be formed in the insulating barrier 20 with a conductor coils.Because the present invention has upper and lower two-layer coil 11,13, thus in Fig. 3, mobile and when changing to the outer ring, run into the overlapping part of conductor coils when electric current by the inner ring of conductor coils at upper coil 11, just be connected to inner coil and avoid by an interlayer connector.Similarly, when electric current flows and when changing to inner ring by the outer ring of conductor coils, runs into the overlapping part of conductor coils at inner coil, also be to be connected to upper coil by an interlayer connector to avoid, the explanation of detailed placement situation as after.
Please refer to Fig. 5 and Fig. 6, Fig. 5 is the top view of upper coil 11 of the inductance 14 of Fig. 3, and Fig. 6 is the top view of inner coil 13 of the inductance 14 of Fig. 3.As shown in Figure 5, the upper coil 11 of inductance 14 comprises first side that one first conducting line segment 30 is positioned at dotted line L, one second conducting line segment 32 is positioned at second side of dotted line L, one the 7th conducting line segment 43 is positioned at first side of dotted line L, one the 8th conducting line segment 44 is positioned at second side of dotted line L, and one the 9th conducting line segment 46 is positioned at first side of dotted line L, and 1 the tenth conducting line segment 48 is positioned at second side of dotted line L, one first connects conducting line segment 54, and one the 3rd connects conducting line segment 58.And first conducting line segment 30 and second conducting line segment 32 are to be symmetrical in dotted line L, and the 7th conducting line segment 42 and the 8th conducting line segment 44 are to be symmetrical in dotted line L, and the 9th conducting line segment 46 and the tenth conducting line segment 48 are to be symmetrical in dotted line L.As shown in Figure 6, the inner coil 13 of inductance 14 comprises a privates section 34, be positioned at first side of dotted line L, one privates section 36, be positioned at second side of dotted line L, privates section 34 is to be symmetrical in dotted line L with privates section 36, one the 5th conducting line segment 38, be positioned at first side of dotted line L, one the 6th conducting line segment 40 is positioned at second side of dotted line L, the 5th conducting line segment 38 and the 6th conducting line segment 40 are to be symmetrical in dotted line L, the 11 conducting line segment 50 is positioned at first side of dotted line L, 1 the 12 conducting line segment 52, be positioned at second side of this dotted line L, the 11 conducting line segment 42 and the 12 conducting line segment 52 are to be symmetrical in dotted line L, and one second connects conducting line segment 56, and one the 4th connects conducting line segment 60.
The connection of the double-deck symmetrical expression inductance 14 of the present invention is as follows, and first end of first conducting line segment 30 is first ends that are connected to privates section 36 via one first interlayer connector 62 (via plug), and its second end is first end that is directly connected in the 8th conducting line segment 44.First end of second conducting line segment 32 is first ends that are connected to privates section 34 via one second interlayer connector 64, its second end is second end that is connected to the second connection conducting line segment 56 via one the 6th interlayer connector 72, and second first end that connects conducting line segment 56 then is connected to first end of the 7th conducting line segment 42 via one the 5th interlayer connector 70.Second end of privates section 34 is first ends that are connected to the first connection lead 54 via one the 3rd interlayer connector 66, and first second end that connects lead 54 then is connected to first end of the 6th conducting line segment 40 via one the 4th interlayer connector 68.Second end of privates section 36 is directly connected in first end of the 5th conducting line segment 38.Second end of the 5th conducting line segment 38 is directly connected in first end of the 12 conducting line segment 52.Second end of the 6th conducting line segment 40 is first ends that are connected to the 3rd connection conducting line segment 58 via one the 7th interlayer connector 74, and the 3rd second end that connects conducting line segment 58 then is connected to second end of the 11 conducting line segment 50 via one the 8th interlayer connector 76.Second end of the 7th conducting line segment 42 is first ends that are connected to the 4th connection conducting line segment 60 via one the 9th interlayer connector 78, and the 4th second end that connects conducting line segment 60 then is connected to second end of the tenth conducting line segment 48 via 1 the tenth interlayer connector 80.Second end of the 8th conducting line segment 44 is directly connected in second end of the 9th conducting line segment 46.First end of the 11 conducting line segment 50 is directly connected in second end of the 12 conducting line segment 52, just the TAP point among Fig. 3 A.First end of the 9th conducting line segment 46 is the P1 end points of inductance, and first end of the tenth conducting line segment 48 is the P2 end points of inductance.
Please refer to Fig. 7 and Fig. 8, Fig. 7 is the schematic diagram of three layers of symmetrical expression inductance 22 of the present invention, and Fig. 8 is the profile of the inductance of Fig. 7 along tangent line 8-8.As shown in Figure 7, inductance 22 comprises upper coil 24, middle level coil 26 and inner coil 28, and each layer line circle all has three circles.Inductance 22 comprises two end points P1 and P2 in addition, and wherein P1 and P2 are symmetrical along the dotted line L of centre.Inductance 22 can be divided into first group of coil 21 again and 23, the first groups of coils 21 of second group of coil are by end points P1 to TAP point, and second group of coil 23 is to end points P2 by the TAP point.In upper coil 24, electric current is entered by the end points P1 of upper coil 24, the direction of arrow in Fig. 7 is advanced, behind first group of coil 21 through upper, middle and lower layer line circle 24,26,28, following again, in, the order of upper coil 28,26, the 24 second group of coil 23 of flowing through, flow out by the P2 end points at last.As shown in Figure 8, on semiconductor substrate 16, form three layers of symmetrical expression inductance 22 of the present invention, have an insulating barrier 18 to isolate between inductance 22 and the substrate 16, and the upper, middle and lower layer line circle the 24,26, the 28th of inductance 22 is formed in the insulating barrier 20 with a conductor coils.
By Fig. 3 and Fig. 7 as can be known, inductance framework of the present invention can be two-layer or three layers, and the rest may be inferred, and inductance framework of the present invention is the inductance of multi-layer conductive coil also.Under area identical, its inductance value of the formed inductance of M layer conductor coils be the formed inductance of individual layer conductor coils inductance value M to M2 doubly.Though the inductance among Fig. 3 and Fig. 7 is tetragonal structure, but also can use hexagon, octagon, circle or even Any shape to design, Yuan Hua induction structure, its quality factor are good more, so long as be the inductance of left-right symmetric and sandwich construction, all belong to category of the present invention.
From the above, multilayer symmetrical expression inductance of the present invention increases the mutual inductance effect of inductance by the conductor coils of multilayer, improve the inductance value of unit are, also because so, multilayer symmetrical expression inductance of the present invention only need use short conductor coils can reach the inductance value identical with conventional art, so the resistance value of inductance is less, thereby can improve the quality factor of inductance.Moreover, each layer conductor coils of multilayer symmetrical expression inductance of the present invention adopted and all used the symmetrical manner design, no matter just be that the induction structure seen from arbitrary end at inductance two ends is all identical, make two end points of inductance have symmetric property, being useful in the difference channel, with the common-mode noise of difference channel disturb drop to minimum.
Compared to conventional art, the required chip area of multilayer symmetrical expression inductance of the present invention comes little much more than conventional planar helical form inductance, can significantly reduce the cost of chip.Secondly, the present invention utilizes the designed inductance of multi-layer conductive loop construction, can increase the mutual inductance between the different layers conductor coils, under equal area, improving inductance value is the several times of planar inductor, that is to say that multilayer inductor only needs short conductor coils length can reach identical inductance value, and higher inductance quality factor are arranged.At last, the inductance that is applied in the difference channel often needs to possess symmetrical character, and with the elimination common-mode noise, yet traditional double laminar spiral inductance does not have the character of symmetry, so be not suitable in the difference channel.Multilayer symmetrical expression inductance of the present invention, two end points of inductance are symmetrical, make inductance can be applied in the design of difference channel, reduce the interference of common-mode noise to circuit.
The above only is the preferred embodiments of the present invention, and all equalizations of doing according to claim of the present invention change and modify, and all should belong to the covering scope of patent of the present invention.
Claims (7)
1. one kind is used the made inductance of integrated circuit technique, comprising:
One substrate;
One first insulating barrier is located at the upside of this substrate;
One second insulating barrier is adjacent to this first insulating barrier;
One first conducting line segment is formed in this first insulating barrier and is positioned at first side of one first straight line;
One second conducting line segment is formed in this first insulating barrier and is positioned at second side of this first straight line, and this first conducting line segment and this second conducting line segment are to be symmetrical in this first straight line;
One privates section is formed in this second insulating barrier and is positioned at first side of this first straight line;
One privates section is formed in this second insulating barrier and is positioned at second side of this first straight line, and this privates section and this privates section are to be symmetrical in this first straight line;
Wherein first end of this first conducting line segment is first end that is connected to this privates section via one first interlayer connector (via plug), and first end of this second conducting line segment is first end that is connected to this privates section via one second interlayer connector.
2. inductance as claimed in claim 1, it also comprises:
One the 5th conducting line segment is formed in this second insulating barrier and is positioned at first side of this first straight line;
One the 6th conducting line segment is formed in this second insulating barrier and is positioned at second side of this first straight line, and the 5th conducting line segment and the 6th conducting line segment are to be symmetrical in this first straight line; And
One first connects conducting line segment, be formed in this first insulating barrier, this first first end that connects conducting line segment is second end that is connected to this privates end via one the 3rd interlayer connector, and this first second end that connects conducting line segment is first end that is connected to the 6th conductor wire end via one the 4th interlayer connector;
Wherein first end of the 5th conducting line segment is second end that is connected directly to this privates section in this second insulating barrier.
3. inductance as claimed in claim 1, it also comprises:
One the 7th conducting line segment is formed in this first insulating barrier and is positioned at first side of this first straight line;
One the 8th conducting line segment is formed in this first insulating barrier and is positioned at second side of this first straight line, and the 7th conducting line segment and the 8th conducting line segment are to be symmetrical in this first straight line; And
One second connects conducting line segment, be formed in this second insulating barrier, this second first end that connects conducting line segment is to be connected to the 7th conductor wire end to the first end via one the 5th interlayer connector, and this second second end that connects conducting line segment is second end that is connected to this second conductor wire end via one the 6th interlayer connector;
Wherein first end of the 8th conducting line segment is second end that is connected directly to this first conducting line segment in this first insulating barrier.
4. one kind is used the made inductance of integrated circuit technique, comprises:
The multi-layer spiral inductance, the described helical form inductance of different layers has the symmetrical structure and the identical sense of current;
Insulating barrier is used for isolating the described helical form inductance of different layers;
A plurality of interlayer connectors are used for connecting the described helical form inductance of different layers.
5. inductance as claimed in claim 4, wherein said multi-layer spiral inductance is two-layer.
6. inductance as claimed in claim 4, wherein said multi-layer spiral inductance is three layers.
7. inductance as claimed in claim 4, wherein said interlayer connector are to change layer when the inner ring of helical form inductance is changed to the outer ring, make described helical form inductance have the symmetrical structure and the identical sense of current.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 02147925 CN1210729C (en) | 2002-10-30 | 2002-10-30 | Multilayer balanced inductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 02147925 CN1210729C (en) | 2002-10-30 | 2002-10-30 | Multilayer balanced inductor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1405801A true CN1405801A (en) | 2003-03-26 |
| CN1210729C CN1210729C (en) | 2005-07-13 |
Family
ID=4751375
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 02147925 Expired - Lifetime CN1210729C (en) | 2002-10-30 | 2002-10-30 | Multilayer balanced inductor |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1210729C (en) |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100481283C (en) * | 2006-07-18 | 2009-04-22 | 威盛电子股份有限公司 | Inductive element and symmetric inductive component |
| CN101090033B (en) * | 2007-05-17 | 2010-06-02 | 威盛电子股份有限公司 | Symmetric differential inductance structure |
| CN101017726B (en) * | 2004-01-30 | 2011-07-27 | 联华电子股份有限公司 | Symmetric inductor |
| CN1950913B (en) * | 2004-03-03 | 2012-06-13 | 艾利森电话股份有限公司 | Method and inductor layout for reduced vco coupling |
| CN103077809A (en) * | 2011-10-26 | 2013-05-01 | 上海华虹Nec电子有限公司 | Symmetrical stacked inductor structure and winding method thereof |
| CN103400820A (en) * | 2013-01-30 | 2013-11-20 | 威盛电子股份有限公司 | Semiconductor device with a plurality of semiconductor chips |
| CN104517941A (en) * | 2013-09-29 | 2015-04-15 | 澜起科技（上海）有限公司 | Coil applied to inductance components and method for manufacturing coil |
| CN104952834A (en) * | 2014-03-26 | 2015-09-30 | 瑞昱半导体股份有限公司 | Integrated transformer |
| US9824812B2 (en) | 2014-03-19 | 2017-11-21 | Realtek Semiconductor Corp. | Integrated stacked transformer |
| CN109643598A (en) * | 2016-09-22 | 2019-04-16 | 苹果公司 | Utilize the coupled-inductor structure of thin magnetic film |
| CN111863779A (en) * | 2019-04-30 | 2020-10-30 | 瑞昱半导体股份有限公司 | Cross structure of integrated transformer and integrated inductor |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI681557B (en) * | 2019-04-25 | 2020-01-01 | 瑞昱半導體股份有限公司 | Crossing structure of integrated transformer and integrated inductor |
-
2002
- 2002-10-30 CN CN 02147925 patent/CN1210729C/en not_active Expired - Lifetime
Cited By (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101017726B (en) * | 2004-01-30 | 2011-07-27 | 联华电子股份有限公司 | Symmetric inductor |
| CN1950913B (en) * | 2004-03-03 | 2012-06-13 | 艾利森电话股份有限公司 | Method and inductor layout for reduced vco coupling |
| CN100481283C (en) * | 2006-07-18 | 2009-04-22 | 威盛电子股份有限公司 | Inductive element and symmetric inductive component |
| CN101090033B (en) * | 2007-05-17 | 2010-06-02 | 威盛电子股份有限公司 | Symmetric differential inductance structure |
| CN103077809A (en) * | 2011-10-26 | 2013-05-01 | 上海华虹Nec电子有限公司 | Symmetrical stacked inductor structure and winding method thereof |
| CN103400820A (en) * | 2013-01-30 | 2013-11-20 | 威盛电子股份有限公司 | Semiconductor device with a plurality of semiconductor chips |
| US9142541B2 (en) | 2013-01-30 | 2015-09-22 | Via Technologies, Inc. | Semiconductor device having inductor |
| CN103400820B (en) * | 2013-01-30 | 2016-08-10 | 威盛电子股份有限公司 | Semiconductor device with a plurality of semiconductor chips |
| CN104517941B (en) * | 2013-09-29 | 2018-12-28 | 澜起科技股份有限公司 | Coil and application and preparation are in the method for the coil of inductance element |
| CN104517941A (en) * | 2013-09-29 | 2015-04-15 | 澜起科技（上海）有限公司 | Coil applied to inductance components and method for manufacturing coil |
| US9824812B2 (en) | 2014-03-19 | 2017-11-21 | Realtek Semiconductor Corp. | Integrated stacked transformer |
| CN104952834A (en) * | 2014-03-26 | 2015-09-30 | 瑞昱半导体股份有限公司 | Integrated transformer |
| CN104952834B (en) * | 2014-03-26 | 2019-01-18 | 瑞昱半导体股份有限公司 | Integrated transformer |
| CN109643598A (en) * | 2016-09-22 | 2019-04-16 | 苹果公司 | Utilize the coupled-inductor structure of thin magnetic film |
| JP2021048399A (en) * | 2016-09-22 | 2021-03-25 | アップル インコーポレイテッドＡｐｐｌｅ Ｉｎｃ． | Coupled inductor structures utilizing magnetic films |
| US11430606B2 (en) | 2016-09-22 | 2022-08-30 | Apple Inc. | Coupled inductor structures utilizing magnetic films |
| JP7171680B2 (en) | 2016-09-22 | 2022-11-15 | アップル インコーポレイテッド | Coupling inductor structure using magnetic film |
| CN111863779A (en) * | 2019-04-30 | 2020-10-30 | 瑞昱半导体股份有限公司 | Cross structure of integrated transformer and integrated inductor |
| CN111863779B (en) * | 2019-04-30 | 2022-02-25 | 瑞昱半导体股份有限公司 | Cross structure of integrated transformer and integrated inductor |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1210729C (en) | 2005-07-13 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US7808356B2 (en) | Integrated high frequency BALUN and inductors | |
| TWI648754B (en) | Interleaved transformer and method of making the same | |
| US7253712B1 (en) | Integrated high frequency balanced-to-unbalanced transformers | |
| US20040075521A1 (en) | Multi-level symmetrical inductor | |
| CN104517941B (en) | Coil and application and preparation are in the method for the coil of inductance element | |
| TWI224798B (en) | Transformer formed between two layout layers | |
| US10424431B2 (en) | Coil, inductor device and method for manufacturing the coil | |
| CN1405801A (en) | Multilayer balanced inductor | |
| CN100565875C (en) | The symmetry inductance element | |
| CN1889265A (en) | Silicon-base multi-layer helical differential inductance | |
| JP3671520B2 (en) | Balun element | |
| CN102169868B (en) | On-chip integrated inductor | |
| JP5111815B2 (en) | Embedded capacitor core with multilayer structure | |
| TWI226647B (en) | Inductor formed between two layout layers | |
| CN107994008A (en) | A kind of new low-pass filter with solenoid type silicon hole inductance | |
| CN104979606B (en) | A kind of cabinet-type bus wave filter layered structure | |
| JP2006066769A (en) | Inductor and its manufacturing method | |
| CN107045925A (en) | Coil component | |
| CN1469400A (en) | Inductor formed between two wiring layers | |
| CN101840774A (en) | Small-area transformer with on-chip laminated structure | |
| CN2914270Y (en) | Multilayer winding inductor element | |
| US10958232B2 (en) | LC filter | |
| CN100543989C (en) | Inductor structure | |
| CN101090032A (en) | Inductance structure | |
| US20230230764A1 (en) | Offset transformer structure |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20050713 |