CN100565875C - The symmetry inductance element - Google Patents
The symmetry inductance element Download PDFInfo
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- CN100565875C CN100565875C CNB2007101679128A CN200710167912A CN100565875C CN 100565875 C CN100565875 C CN 100565875C CN B2007101679128 A CNB2007101679128 A CN B2007101679128A CN 200710167912 A CN200710167912 A CN 200710167912A CN 100565875 C CN100565875 C CN 100565875C
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Abstract
The present invention discloses a kind of symmetrical inductance element, is disposed in the substrate, comprising: first and second winding section on an insulating barrier is symmetrically set.Each winding section comprises first and second half-turn type conductor layer of concentric arrangement from outside to inside, and each half-turn type conductor layer has one first end and one second end.On one the cross-over connection layer and once the cross-over connection layer be cross-linked second end of first and second half-turn type conductor layer.Have first and 1 second internal connection-wire structure respectively in the insulating barrier of the half-turn type conductor layer at cross-over connection layer two ends below in the connection, wherein each internal connection-wire structure comprises at least one conductive layer and is electrically connected conductive layer and a plurality of conductive plungers of the half-turn type conductor layer of correspondence.
Description
Technical field
The present invention particularly is applicable to differential-type (differential) operation relevant for a kind of symmetrical inductance element relevant for a kind of symmetrical inductance element.
Background technology
Many numerals and analog component and circuit successfully apply to semiconductor integrated circuit.Above-mentioned parts have comprised passive component, for example resistance, electric capacity or inductance etc.Typical semiconductor integrated circuit comprises a silicon base.The above dielectric layer of one deck is arranged in the substrate, and the above metal level of one deck is arranged in the dielectric layer.These metal levels can form the chip built-in parts by existing semiconductor process techniques, for example chip built-in inductance element (on-chip inductor).
Traditionally, the chip built-in inductance is formed in the substrate and applies to radio frequency band (radio frequencyband) integrated circuit (IC) design.Please refer to Fig. 1, it shows existing two circle symmetric form inductance element floor map.This inductance element is formed in the insulating barrier 110 of a substrate 100 tops, comprising: be symmetricly set in first and second winding section on the insulating barrier 110 of dotted line 2 both sides.First winding section comprises half-turn type conductor layer 101 and 103, and second winding section comprises half-turn type conductor layer 102 and 104.Half-turn type conductor layer 103 parallel half-turn type conductor layers 101 also are positioned at its outside.Half-turn type conductor layer 104 parallel half-turn type conductor layers 102 also are positioned at its outside.Each half-turn type conductor layer has first and second end 10 and 20, and wherein first end 10 of half-turn type conductor layer 101 extends and be connected to first end 10 of half-turn type conductor layer 102.
In order to keep inductance element geometrical symmetry (geometric symmetry), second end 20 of half-turn type conductor layer 103 is electrically connected with second end 20 of half-turn type conductor layer 102 by cross-over connection once (underpass) 111.In addition, second end 20 of half-turn type conductor layer 104 is by cross-over connection layer 113 on one and be electrically connected with second end 20 of half-turn type conductor layer 101.The half-turn type conductor layer 103 and 104 first end 10 have the portion of extending laterally 30 and 40, in order to as the I/O end.
Recently, increasing wireless telecommunications design uses differential circuit reducing common mode (commonmode) noise, and the inductance that applies to above-mentioned differential circuit is required to be symmetrical expression and prevents that common-mode noise from producing.In the inductance element of Fig. 1, compared to last cross-over connection layer 113, following cross-over connection layer 111 is near substrate 100.Therefore, the capacitive couplings between following cross-over connection layer 111 and the substrate 100 (capacitive coupling) is greater than the capacitive couplings between last cross-over connection layer 113 and the substrate 100.Moreover because the thickness of cross-over connection layer 111 is less than last cross-over connection layer 113 down, therefore cross-over connection layer 111 has bigger conductor losses down.Thus, in differential operation, above-mentioned inductance element with geometrical symmetry also can't effectively reduce common-mode noise and can reduce its quality factor (quality factor/Q value).
Therefore, be necessary to seek new symmetrical inductive element design, with effective reduction common-mode noise and promote quality factor.
Summary of the invention
In view of this, the invention reside in provides a kind of symmetrical inductance element, it is by increase going up near the cross-over connection layer and capacitive couplings between the substrate, makes up and down to have similar capacitive couplings between the cross-over connection layer and substrate, and then effectively reduces common-mode noise and promote its quality factor.
The invention discloses a kind of symmetrical inductance element, this symmetry inductance element is configured in the substrate and comprises: an insulating barrier; One first winding section and one second winding section, be symmetrically set on this insulating barrier, each winding section comprises the one first half-turn type conductor layer and the one second half-turn type conductor layer of concentric arrangement from outside to inside, and each half-turn type conductor layer has one first end and one second end; Cross-over connection layer and one first time cross-over connection layer on one first are cross-linked this second end of this first half-turn type conductor layer and the second half-turn type conductor layer; One first internal connection-wire structure and one second internal connection-wire structure, be arranged at respectively in this insulating barrier that connects this this half-turn type conductor layer below at cross-over connection layer two ends on first, wherein this first and second internal connection-wire structure each comprise at least one conductive layer and be electrically connected each a plurality of conductive plungers of this conductive layer and corresponding this half-turn type conductor layer of this first and second internal connection-wire structure; One the 3rd internal connection-wire structure is arranged in this insulating barrier of this first time cross-over connection layer below, and wherein the 3rd internal connection-wire structure comprises at least one conductive layer and is electrically connected this conductive layer of the 3rd internal connection-wire structure and a plurality of conductive plungers of this first time cross-over connection layer.
First end of this second half-turn type conductor layer can interconnect.
This first internal connection-wire structure, second internal connection-wire structure and the 3rd internal connection-wire structure can comprise a plurality of conductive layers that pile up respectively, and this first time cross-over connection layer adds that the summation of the number of plies of conductive layer in the 3rd internal connection-wire structure is same as the number of plies of conductive layer in this first internal connection-wire structure and is same as the number of plies of conductive layer in this second internal connection-wire structure.
Each winding section more can comprise: one the 3rd half-turn type conductor layer and concentric arrangement are in the inboard of this second half-turn type conductor layer.
Second end of the 3rd half-turn type conductor layer can interconnect.
Above-mentioned symmetrical inductance element more can comprise: cross-over connection layer and one second time cross-over connection layer on one second are cross-linked first end of this second half-turn type conductor layer and the 3rd half-turn type conductor layer.
Above-mentioned symmetrical inductance element more can comprise: one the 4th internal connection-wire structure and one the 5th internal connection-wire structure, be arranged at respectively in this insulating barrier that connects this this half-turn type conductor layer below at cross-over connection layer two ends on second, wherein the 4th and the 5th internal connection-wire structure each comprise at least one conductive layer and be electrically connected the 4th and the 5th internal connection-wire structure each conductive layer and a plurality of conductive plungers of corresponding this half-turn type conductor layer.
Above-mentioned symmetrical inductance element more can comprise: one the 6th internal connection-wire structure, be arranged in this insulating barrier of this second time cross-over connection layer below, wherein the 6th internal connection-wire structure comprises at least one conductive layer and is electrically connected the conductive layer of the 6th internal connection-wire structure and a plurality of conductive plungers of this second time cross-over connection layer.
Above-mentioned symmetrical inductance element more can comprise: one the 4th internal connection-wire structure and one the 5th internal connection-wire structure, be arranged at respectively in this insulating barrier that connects this this half-turn type conductor layer below at cross-over connection layer two ends on second, wherein the 4th and the 5th internal connection-wire structure each comprise at least one conductive layer and be electrically connected the 4th and the 5th internal connection-wire structure each this conductive layer and a plurality of conductive plungers of corresponding this half-turn type conductor layer; One the 6th internal connection-wire structure is arranged in this insulating barrier of this second time cross-over connection layer below, and wherein the 6th internal connection-wire structure comprises at least one conductive layer and is electrically connected this conductive layer of the 6th internal connection-wire structure and a plurality of conductive plungers of this second time cross-over connection layer.
The 4th internal connection-wire structure, the 5th internal connection-wire structure and the 6th internal connection-wire structure can comprise a plurality of conductive layers that pile up respectively, and this second time cross-over connection layer adds the number of plies that the summation of the number of plies of conductive layer in the 6th internal connection-wire structure is same as the number of plies of conductive layer in the 4th internal connection-wire structure and is same as conductive layer in the 5th internal connection-wire structure.
The present invention is by increase going up near the cross-over connection layer and capacitive couplings between substrate, makes up and down to have similar capacitive couplings between cross-over connection layer and substrate, and then effectively reduces common-mode noise and promote its quality factor.
Description of drawings
Fig. 1 shows existing two circle symmetric form inductance element floor map.
Fig. 2 shows two circle symmetric form inductance element floor map according to the embodiment of the invention.
Fig. 3 A shows among Fig. 2 the generalized section along 3a-3a ' line.
Fig. 3 B shows among Fig. 2 the generalized section along 3b-3b ' line.
Fig. 3 C shows among Fig. 2 the generalized section along 3c-3c ' line.
Fig. 4 shows three circle symmetric form inductance element floor map according to the embodiment of the invention.
Fig. 5 A shows among Fig. 4 the generalized section along 5a-5a ' line.
Fig. 5 B shows among Fig. 4 the generalized section along 5b-5b ' line.
Fig. 5 C shows among Fig. 4 the generalized section along 5c-5c ' line.
Description of reference numerals
Existing
2～dotted line; 10～the first ends; 20～the second ends; 30,40～extend laterally portion; 100～substrate; 101,102,103,104～half-turn type conductor layer; 110～insulating barrier; 111～following cross-over connection layer; 113～upward cross-over connection layers.
Embodiment
4～dotted line; 50～the first ends; 60～the second ends; 70,80～extend laterally portion; 200～substrate; 201,202,203,204,205,206～half-turn type conductor layer; 210～insulating barrier; 212,214,216,218～internal connection-wire structure; 220,230～following cross-over connection layer; 221,222,223,224,225,226,227,228,422,423,427,428～conductive plunger; 240,250～upward cross-over connection layers; 320,322,323,327,328,330,522,523,527,528～conductive layer.
Embodiment
Below cooperate Fig. 2,3A, 3B, reach the two circles symmetry inductance element that 3C illustrates the embodiment of the invention, wherein Fig. 2 shows two circle symmetric form inductance element floor map, and Fig. 3 A, 3B, and 3C show respectively among Fig. 2 along 3a-3a ' line, 3b-3b ', and the generalized section of 3c-3c ' line.The symmetry inductance element comprises: be arranged at cross-over connection layer 240 on a insulating barrier 210 in the substrate 200, first and second winding section,, once cross-over connection layer 220 and internal connection- wire structure 212 and 214.
Please refer to Fig. 2, first winding section is arranged on the insulating barrier 210, and is positioned at one first side of dotted line 4.First winding section comprises from outside to inside the half-turn type conductor layer 201 and 203 of concentric arrangement in regular turn.Second winding section is arranged on the insulating barrier 210, and is positioned at one second side of dotted line 4, and this second side is with respect to first side.Second winding section comprises from outside to inside the half-turn type conductor layer 202 and 204 of concentric arrangement in regular turn.Second winding section is that symmetry axis is symmetrical in first winding section with dotted line 4.First and second winding section can constitute and is roughly circle, rectangle, hexagon, octagon or polygonal external form., be simplicity of illustration herein, illustrate as example with octagon.Moreover the material of first and second winding section can be made of metal, for example: copper, aluminium or its alloy.In the present embodiment, half-turn type conductor layer 201,202,203, and 204 can have identical live width W and line-spacing S.Moreover each half-turn type conductor layer has one first end 50 and one second end 60.First end 50 of the half-turn type conductor layer 203 of first winding section extends to first end 50 of half-turn type conductor layer 204 of second winding section to interconnect.First end 50 of the half-turn type conductor layer 201 of first winding section and the half-turn type conductor layer 202 of second winding section has the portion of extending laterally 70 and 80 respectively, in order to input or output end as signal.
In the present embodiment, in order to keep the inductance element geometrical symmetry, last cross-over connection layer 240 and down cross-over connection layer 220 be arranged between first and second winding section, in order to the half-turn type conductor layer 201 that is cross-linked first winding section and 203 second end 60 and the half-turn type conductor layer 202 of second winding section and 204 second end 60.For example, following cross-over connection layer 220 is arranged in the insulating barrier 210, and is electrically connected second end 60 of half-turn type conductor layer 201 and second end 60 of half-turn type conductor layer 204 respectively by conductive plunger 221 and 224.Moreover last cross-over connection layer 240 is arranged on the insulating barrier 210, and extends to the usefulness of second end 60 of second end 60 of half-turn type conductor layer 202 and half-turn type conductor layer 203 for electrical connection.In certain embodiments, following cross-over connection layer 220 can be electrically connected second end 60 of half-turn type conductor layer 202 by conductive plunger respectively, and second end 60 of half-turn type conductor layer 203, may extend to the usefulness of second end 60 of second end 60 of half-turn type conductor layer 201 and half-turn type conductor layer 204 and go up cross-over connection layer 240 for electrical connection.Be noted that the quality factor that reduces inductance element because the thickness of following cross-over connection layer 220 less than last cross-over connection layer 240, makes following cross-over connection layer 220 have bigger conductor losses.Therefore, please refer to Fig. 3 B, can be below following cross-over connection layer 220 extra and connect an internal connection-wire structure, to reduce the conductor losses of cross-over connection layer 220 down.This internal connection-wire structure is arranged at down in the insulating barrier 210 of cross-over connection layer 220 below, and it comprises that a conductive layer 320 and electrical connection conductive layer 320 reach a plurality of conductive plungers of cross-over connection layer 220 down.For example, two conductive plungers (not illustrating) are arranged at respectively in the insulating barrier 210 between conductive layer 320 and the following cross-over connection layer 220, and substantially respectively in alignment with conductive plunger 221 and 224 (as shown in Figure 2).In certain embodiments, this internal connection-wire structure can comprise a plurality of conductive layers that pile up and be electrically connected.
Moreover, please refer to Fig. 2, in the connection half-turn type conductor layer 203 at cross-over connection layer 240 two ends and 202 belows respectively and connect internal connection- wire structure 212 and 214, wherein the internal connection- wire structures 212 and 214 in the insulating barrier 210 comprise at least one conductive layer respectively and are electrically connected conductive layer and a plurality of conductive plungers of corresponding half-turn type conductor layer.For example, internal connection-wire structure 212 comprises the conductive layer 323 that piles up and 523 and conductive plunger 223 and 423, and as shown in Figure 3A, and internal connection-wire structure 214 comprises the conductive layer 322 that piles up and 522 and conductive plunger 222 and 422, shown in Fig. 3 C.Be noted that the number of plies of conductive layer in the internal connection- wire structure 212 and 214 can be decided according to design requirement.In addition, in the present embodiment, the number of plies that the number of plies summation of conductive layer can be same as the number of plies of conductive layer in the internal connection-wire structure 212 and be same as conductive layer in the internal connection-wire structure 214 in the internal connection-wire structure of following cross-over connection layer 220 and its below.In other words, be positioned at following cross-over connection layer 220 below near the conductive layer of substrate 200 (for example: the conductive layer 320 of Fig. 3 B) be positioned at internal connection- wire structure 212 and 214 belows be positioned at same one deck near the conductive layer (for example: the conductive layer 523 of Fig. 3 A and the conductive layer 522 of Fig. 3 C) of substrate 200.In another embodiment, if down the below of cross-over connection layer 220 does not dispose internal connection-wire structure, that then descend cross-over connection layer 220 and be positioned at internal connection- wire structure 212 and 214 belows is positioned at same one deck near the conductive layer (for example: the conductive layer 523 of Fig. 3 A and the conductive layer 522 of Fig. 3 C) of substrate 200.
Though the capacitive couplings between following cross-over connection layer 220 and the substrate 200 is greater than the capacitive couplings between last cross-over connection layer 240 and the substrate 200, however go up near cross-over connection layer 240 two ends internal connection- wire structure 212 and 214 can increase half-turn type conductor layer 203 and 202 and substrate 200 between capacitive couplings and be similar to half-turn type conductor layer 201 and 204 and substrate 200 between capacitive couplings.Thus, in differential operation, can effectively reduce common-mode noise and promote its quality factor according to the inductance element of present embodiment.
Below cooperate Fig. 4,5A, 5B, reach the three circles symmetry inductance element that 5C illustrates the embodiment of the invention, wherein Fig. 4 shows three circle symmetric form inductance element floor map, and Fig. 5 A, 5B, and 5C show respectively among Fig. 4 along 5a-5a ' line, 5b-5b ', and the generalized section of 5c-5c ' line.Be same as Fig. 2,3A, 3B, and 3C in the parts of symmetrical inductance element use identical label and omit relevant explanation.In the present embodiment, first winding section comprises from outside to inside the half-turn type conductor layer 201,203, and 205 of concentric arrangement in regular turn.Second winding section comprises from outside to inside the half-turn type conductor layer 202,204, and 206 of concentric arrangement in regular turn.Each half-turn type conductor layer has one first end 50 and one second end 60.Second end 60 of the half-turn type conductor layer 205 of first winding section extends to second end 60 of half-turn type conductor layer 206 of second winding section to interconnect.
In the present embodiment, except last cross-over connection layer 240 and down cross-over connection layer 220 be cross-linked the half-turn type conductor layer 202 and 204 second end 60 of the half-turn type conductor layer 201 of first winding section and 203 second end 60 and second winding section, inductance element comprises that also cross-over connection layer 250 reaches half-turn type conductor layer 203 and the half-turn type conductor layer 204 of 205 and second winding section and 206 first end 50 that following cross-over connection layer 230 is cross-linked first winding section.For example, following cross-over connection layer 230 is electrically connected first end 50 of half-turn type conductor layer 203 and first end 50 of half-turn type conductor layer 206 respectively by conductive plunger 225 and 226.Moreover last cross-over connection layer 240 extends to the usefulness of first end 50 of first end 50 of half-turn type conductor layer 205 and half-turn type conductor layer 204 for electrical connection.In certain embodiments, following cross-over connection layer 230 can be electrically connected first end 50 of half-turn type conductor layer 205 and first end 50 of half-turn type conductor layer 204 respectively by conductive plunger, may extend to the usefulness of first end 50 of first end 50 of half-turn type conductor layer 203 and half-turn type conductor layer 206 for electrical connection and go up cross-over connection layer 250.
Please refer to Fig. 5 B, can be below following cross-over connection layer 230 extra and connect an internal connection-wire structure, to reduce the conductor losses of cross-over connection layer 230 down.This internal connection-wire structure is arranged at down in the insulating barrier 210 of cross-over connection layer 230 below, it comprise a conductive layer 330 and be electrically connected conductive layer 330 and down cross-over connection layer 230 a plurality of conductive plungers for example, two conductive plungers (not illustrating) are arranged at respectively in the insulating barrier 210 between conductive layer 330 and the following cross-over connection layer 230, and substantially respectively in alignment with conductive plunger 225 and 226 (as shown in Figure 4).In certain embodiments, this internal connection-wire structure can comprise a plurality of conductive layers that pile up and be electrically connected.
Moreover, please refer to Fig. 4, in the connection half-turn type conductor layer 205 at cross-over connection layer 250 two ends and 204 belows respectively and connect internal connection- wire structure 216 and 218, wherein the internal connection- wire structures 216 and 218 in the insulating barrier 210 comprise at least one conductive layer respectively and are electrically connected conductive layer and a plurality of conductive plungers of corresponding half-turn type conductor layer.For example, internal connection-wire structure 216 comprises the conductive layer 327 that piles up and 527 and conductive plunger 227 and 427, and shown in Fig. 5 A, and internal connection-wire structure 218 comprises the conductive layer 328 that piles up and 528 and conductive plunger 228 and 428, shown in Fig. 5 C.In addition, in the present embodiment, the number of plies that the number of plies summation of conductive layer can be same as the number of plies of conductive layer in the internal connection-wire structure 216 and be same as conductive layer in the internal connection-wire structure 218 in the internal connection-wire structure of following cross-over connection layer 230 and its below.In other words, be positioned at following cross-over connection layer 230 below near the conductive layer of substrate 200 (for example: the conductive layer 330 of Fig. 5 B) be positioned at internal connection- wire structure 216 and 218 belows be positioned at same one deck near the conductive layer (for example: the conductive layer 527 of Fig. 5 A and the conductive layer 528 of Fig. 5 C) of substrate 200.In another embodiment, if down the below of cross-over connection layer 230 does not dispose internal connection-wire structure, that then descend cross-over connection layer 230 and be positioned at internal connection- wire structure 216 and 218 belows is positioned at same one deck near the conductive layer (for example: the conductive layer 527 of Fig. 5 A and the conductive layer 528 of Fig. 5 C) of substrate 200.
Near last cross-over connection layer 250 two ends internal connection- wire structure 216 and 218 can increase half-turn type conductor layer 205 and 204 and substrate 200 between capacitive couplings and be similar to half-turn type conductor layer 203 and 206 and substrate 200 between capacitive couplings, and then effectively reduce common-mode noise and promote its quality factor.
In addition, though be noted that the symmetric form inductance element with two circles and three circles illustrates as example in the foregoing description, in the application of the symmetric form inductance element of other multiturns, also can obtain identical advantage.
Though the present invention discloses as above with preferred embodiment; right its is not in order to qualification the present invention, any those of skill in the art, without departing from the spirit and scope of the present invention; when can doing to change and retouching, so protection scope of the present invention is as the criterion when looking appended the claim person of defining.
Claims (10)
1. a symmetrical inductance element is configured in the substrate, and this symmetry inductance element comprises:
One insulating barrier;
One first winding section and one second winding section, be symmetrically set on this insulating barrier, each winding section comprises the one first half-turn type conductor layer and the one second half-turn type conductor layer of concentric arrangement from outside to inside, and each half-turn type conductor layer has one first end and one second end;
Cross-over connection layer and one first time cross-over connection layer on one first are cross-linked described second end of the described first half-turn type conductor layer and the second half-turn type conductor layer;
One first internal connection-wire structure and one second internal connection-wire structure, be arranged at respectively in this insulating barrier that connects this described half-turn type conductor layer below at cross-over connection layer two ends on first, wherein this first and second internal connection-wire structure each comprise at least one conductive layer and be electrically connected each a plurality of conductive plungers of this conductive layer and corresponding this half-turn type conductor layer of this first and second internal connection-wire structure; And
One the 3rd internal connection-wire structure is arranged in this insulating barrier of this first time cross-over connection layer below, and wherein the 3rd internal connection-wire structure comprises at least one conductive layer and is electrically connected this conductive layer of the 3rd internal connection-wire structure and a plurality of conductive plungers of this first time cross-over connection layer.
2. symmetrical inductance element as claimed in claim 1, described first end of the wherein said second half-turn type conductor layer interconnects.
3. symmetrical inductance element as claimed in claim 1, wherein said first internal connection-wire structure, second internal connection-wire structure and the 3rd internal connection-wire structure comprise a plurality of conductive layers that pile up respectively, and this first time cross-over connection layer adds that the summation of the number of plies of conductive layer described in the 3rd internal connection-wire structure is same as the number of plies of conductive layer described in this first internal connection-wire structure and is same as the number of plies of conductive layer described in this second internal connection-wire structure.
4. symmetrical inductance element as claimed in claim 1, wherein each winding section more comprises: one the 3rd half-turn type conductor layer and concentric arrangement are in the inboard of this second half-turn type conductor layer.
5. symmetrical inductance element as claimed in claim 4, second end of wherein said the 3rd half-turn type conductor layer interconnects.
6. symmetrical inductance element as claimed in claim 4 more comprises: cross-over connection layer and one second time cross-over connection layer on one second are cross-linked first end of described second half-turn type conductor layer and the 3rd half-turn type conductor layer.
7. symmetrical inductance element as claimed in claim 6, more comprise: one the 4th internal connection-wire structure and one the 5th internal connection-wire structure, be arranged at respectively in this insulating barrier that connects this described half-turn type conductor layer below at cross-over connection layer two ends on second, wherein the 4th and the 5th internal connection-wire structure each comprise at least one conductive layer and be electrically connected the 4th and the 5th internal connection-wire structure each conductive layer and a plurality of conductive plungers of corresponding this half-turn type conductor layer.
8. symmetrical inductance element as claimed in claim 6, more comprise one the 6th internal connection-wire structure, be arranged in this insulating barrier of this second time cross-over connection layer below, wherein the 6th internal connection-wire structure comprises at least one conductive layer and is electrically connected the conductive layer of the 6th internal connection-wire structure and a plurality of conductive plungers of this second time cross-over connection layer.
9. symmetrical inductance element as claimed in claim 6 more comprises:
One the 4th internal connection-wire structure and one the 5th internal connection-wire structure, be arranged at respectively in this insulating barrier that connects this described half-turn type conductor layer below at cross-over connection layer two ends on second, wherein the 4th and the 5th internal connection-wire structure each comprise at least one conductive layer and be electrically connected the 4th and the 5th internal connection-wire structure each this conductive layer and a plurality of conductive plungers of corresponding this half-turn type conductor layer; And
One the 6th internal connection-wire structure is arranged in this insulating barrier of this second time cross-over connection layer below, and wherein the 6th internal connection-wire structure comprises at least one conductive layer and is electrically connected this conductive layer of the 6th internal connection-wire structure and a plurality of conductive plungers of this second time cross-over connection layer.
10. symmetrical inductance element as claimed in claim 9, wherein said the 4th internal connection-wire structure, the 5th internal connection-wire structure and the 6th internal connection-wire structure comprise a plurality of conductive layers that pile up respectively, and this second time cross-over connection layer adds the number of plies that the summation of the number of plies of conductive layer described in the 6th internal connection-wire structure is same as the number of plies of conductive layer described in the 4th internal connection-wire structure and is same as conductive layer described in the 5th internal connection-wire structure.
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| CNB2007101679128A CN100565875C (en) | 2007-10-26 | 2007-10-26 | The symmetry inductance element |
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| CNB2007101679128A CN100565875C (en) | 2007-10-26 | 2007-10-26 | The symmetry inductance element |
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| EP2421011A1 (en) * | 2010-08-19 | 2012-02-22 | Nxp B.V. | Symmetrical inductor |
| US10790699B2 (en) | 2015-09-24 | 2020-09-29 | Apple Inc. | Configurable wireless transmitter device |
| US10477741B1 (en) | 2015-09-29 | 2019-11-12 | Apple Inc. | Communication enabled EMF shield enclosures |
| US10651685B1 (en) | 2015-09-30 | 2020-05-12 | Apple Inc. | Selective activation of a wireless transmitter device |
| US10734840B2 (en) | 2016-08-26 | 2020-08-04 | Apple Inc. | Shared power converter for a wireless transmitter device |
| US10594160B2 (en) | 2017-01-11 | 2020-03-17 | Apple Inc. | Noise mitigation in wireless power systems |
| CN112582154B (en) * | 2019-09-30 | 2022-04-12 | 瑞昱半导体股份有限公司 | Inductance device |
| TWI691979B (en) * | 2019-10-24 | 2020-04-21 | 威鋒電子股份有限公司 | On-chip inductor structure |
| TWI757073B (en) * | 2021-01-28 | 2022-03-01 | 威鋒電子股份有限公司 | Multilayer-type on-chip inductor structure |
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