CN111863779B - Cross structure of integrated transformer and integrated inductor - Google Patents
Cross structure of integrated transformer and integrated inductor Download PDFInfo
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- CN111863779B CN111863779B CN201910363196.3A CN201910363196A CN111863779B CN 111863779 B CN111863779 B CN 111863779B CN 201910363196 A CN201910363196 A CN 201910363196A CN 111863779 B CN111863779 B CN 111863779B
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- 239000002184 metal Substances 0.000 claims abstract description 51
- 239000004065 semiconductor Substances 0.000 claims abstract description 18
- 230000000149 penetrating effect Effects 0.000 claims description 14
- 230000008878 coupling Effects 0.000 abstract description 3
- 238000010168 coupling process Methods 0.000 abstract description 3
- 238000005859 coupling reaction Methods 0.000 abstract description 3
- 238000010586 diagram Methods 0.000 description 10
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F27/00—Details of transformers or inductances, in general
- H01F27/28—Coils; Windings; Conductive connections
- H01F27/2804—Printed windings
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F17/00—Fixed inductances of the signal type
- H01F17/0006—Printed inductances
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F19/00—Fixed transformers or mutual inductances of the signal type
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/10—Inductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F17/00—Fixed inductances of the signal type
- H01F17/0006—Printed inductances
- H01F2017/0086—Printed inductances on semiconductor substrate
Abstract
The invention discloses a cross structure of an integrated transformer or an integrated inductor, which can be applied to various integrated transformers or integrated inductors, so that the design of the integrated transformer or the integrated inductor is more flexible, and the requirements of various integrated transformers or integrated inductors on coupling coefficients and/or quality factors are met. The crossing structure of the present invention comprises a plurality of line segments formed in a first metal layer of the semiconductor structure and a plurality of line segments formed in a second metal layer of the semiconductor structure, wherein the first metal layer is not equal to the second metal layer.
Description
Technical Field
The present invention relates to integrated transformers and integrated inductors, and more particularly, to a cross structure of an integrated transformer and an integrated inductor.
Background
As integrated circuits (ics) develop into System on Chip (SoC), integrated transformers (integrated transformers) and/or integrated inductors (integrated inductors) gradually replace conventional discrete components, and are widely used in radio frequency integrated circuits. However, the transformer and the inductor in the integrated circuit often occupy a large chip area, and therefore, how to reduce the area of the transformer and the inductor in the integrated circuit and maintain the characteristics of the device (such as coupling coefficient (K) or quality factor (Q)) becomes an important issue.
In particular, the cross (crossing) structure plays a critical role for the winding or layout of the integrated transformer and the integrated inductor, as well as for the quality factor and symmetry.
Disclosure of Invention
In view of the deficiencies of the prior art, it is an object of the present invention to provide a crossover structure of an integrated transformer and an integrated inductor.
The invention discloses a cross structure applied to an integrated transformer, which comprises a first line segment, a second line segment, a third line segment, a fourth line segment, a fifth line segment, a sixth line segment and a seventh line segment. The first line segment, the second line segment, the third line segment, the fourth line segment and the fifth line segment are manufactured on a first metal layer of the semiconductor structure, and the sixth line segment and the seventh line segment are manufactured on a second metal layer of the semiconductor structure. The sixth line segment is connected with the first line segment and the fifth line segment through a plurality of penetrating structures, so that the first line segment, the fifth line segment and the sixth line segment form a first lead. The seventh line segment is connected with the second line segment and the fourth line segment through a plurality of penetrating structures, so that the second line segment, the seventh line segment and the fourth line segment form a second lead. The first metal layer is not equal to the second metal layer. The integrated transformer comprises a first inductor and a second inductor, wherein the first lead and the third line segment are part of the first inductor, and the second lead is part of the second inductor. The first conductive line crosses over the second conductive line and the third line segment, and the second conductive line crosses over the third line segment.
The invention also discloses a cross structure applied to an integrated transformer or an integrated inductor, which comprises the following components: the first line segment, the second line segment, the third line segment, the fourth line segment, the fifth line segment, the sixth line segment, the seventh line segment and the eighth line segment. The first line segment, the second line segment, the third line segment, the fourth line segment, the fifth line segment and the sixth line segment are manufactured on a first metal layer of the semiconductor structure, and the seventh line segment and the eighth line segment are manufactured on a second metal layer of the semiconductor structure. The seventh line segment is connected with the third line segment and the fifth line segment through a plurality of penetrating structures, so that the third line segment, the fifth line segment and the seventh line segment form a first lead. The eighth line segment is connected with the fourth line segment and the sixth line segment through a plurality of penetrating structures, so that the fourth line segment, the sixth line segment and the eighth line segment form a second lead. The first metal layer is not equal to the second metal layer. The first wire crosses the first line segment and the second line segment, and the second wire crosses the first line segment and the second line segment.
The invention also discloses a cross structure applied to an integrated transformer or an integrated inductor, which comprises the following components: the first line segment, the second line segment, the third line segment, the fourth line segment, the fifth line segment, the sixth line segment, the seventh line segment, the eighth line segment, the ninth line segment and the tenth line segment. The first line segment, the second line segment, the third line segment, the fourth line segment, the fifth line segment, the sixth line segment and the seventh line segment are manufactured on a first metal layer of the semiconductor structure, and the eighth line segment, the ninth line segment and the tenth line segment are manufactured on a second metal layer of the semiconductor structure. The eighth line segment is connected with the first line segment and the seventh line segment through a plurality of penetrating structures, so that the first line segment, the seventh line segment and the eighth line segment form a first conducting wire. The ninth line segment is connected with the second line segment and the fifth line segment through a plurality of penetrating structures, so that the second line segment, the fifth line segment and the ninth line segment form a second lead. The tenth line segment is connected with the third line segment and the sixth line segment through a plurality of penetrating structures, so that the third line segment, the sixth line segment and the tenth line segment form a third conducting wire. The first metal layer is not equal to the second metal layer. The first wire crosses over the fourth wire segment, the second wire and the third wire, the second wire crosses over the fourth wire segment, and the third wire crosses over the fourth wire segment.
The invention provides various cross structures, which can be applied to various integrated transformers or integrated inductors, so that the design of the integrated transformers or the integrated inductors is more flexible, and the requirements of various integrated transformers or integrated inductors on coupling coefficients and/or quality factors are met.
The features, implementations, and technical effects of the present invention are described in detail below with reference to the accompanying drawings.
Drawings
FIGS. 1A-1B are block diagrams of an integrated transformer according to an embodiment of the present invention;
FIGS. 2A-2C are block diagrams of an embodiment of a crossbar structure according to the present invention;
FIGS. 3A-3C are block diagrams of another embodiment of a crossbar structure according to the present invention;
FIGS. 4A-4C are block diagrams of another embodiment of a crossbar structure according to the present invention; and
fig. 5A to 5C are structural diagrams of another embodiment of the crossing structure of the present invention.
Description of the symbols
11-a, 11-p, 22-a, 22-l, 11-b, 11-c, 11-d, 11-e, 11-f, 11-g, 11-h, 11-i, 11-j, 11-k, 11-l, 11-m, 11-n, 11-o, 12-a, 12-b, 12-c, 12-d, 12-e, 12-f, 12-g, 12-h, 12-i, 12-j, 12-k, 12-l, 12-m, 12-n, 22-b, 22-c, 22-d, 22-e, 22-f, 22-g, 22-h, 22-i, 22-j, 22-k, 21-a, 21-b, 21-b, 21-c, 21-d, 21-e, 21-f, 21-g, 21-h, 21-i, 21-j endpoints
200. 300, 400, 500 intersection construction
50. 60 selection area
201. 202, 203, 204, 301, 302, 303, 304, 401, 402, 403, 404, 501, 502, 503, 504, 505, 506, 507 through the structure
210. 220, 230, 240, 250, 260, 270, 310, 320, 330, 340, 350, 360, 370, 410, 420, 430, 440, 450, 460, 470, 480, 510, 520, 530, 540, 550, 560, 570, 580, 585, 590, 595 line segments
220-1, 220-2, 230-1, 230-2, 230-3, 260-1, 260-2, 260-3, 270-1, 270-2, 320-1, 320-2, 320-3, 330-1, 330-2, 330-3, 330-4, 360-1, 360-2, 360-3, 360-4, 370-1, 370-2, 370-3, 410-1, 410-2, 410-3, 420-1, 420-2, 420-3, 470-1, 470-2, 480-1, 480-2, 540-1, 540-2, 540-3, 580-1, 580-2, 580-3 sub-line segments
Detailed Description
The technical terms in the following description refer to the conventional terms in the technical field, and some terms are explained or defined in the specification, and the explanation of the some terms is based on the explanation or the definition in the specification.
Fig. 1A and 1B are structural diagrams of an integrated transformer according to an embodiment of the present invention. The plurality of line segments or traces of FIG. 1A are implemented in a first metal layer of the semiconductor structure, and the plurality of line segments or traces of FIG. 1B are implemented in a second metal layer of the semiconductor structure, the second metal layer being unequal to the first metal layer. For example, the first Metal Layer may be a Re-Distribution Layer (RDL) in a semiconductor structure, and the second Metal Layer may be an Ultra Thick Metal (UTM) Layer in a semiconductor structure.
The integrated transformer of fig. 1A and 1B includes a first inductor and a second inductor. The end point (11-a) and the end point (11-p) are output/input ends of the first inductor, and also form one port of the integrated transformer; terminals 22-a and 22-l are the output/input terminals of the second inductor and also form the other port of the integrated transformer.
Please refer to fig. 1A and fig. 1B. The terminal 11-b and the terminal 11-c are connected; more specifically, the connected terminals are connected by a through structure, such as a via (via) structure or via array (via array). Similarly, terminals 11-d and 11-e are connected; the end points 11-f and 11-g are connected; the terminal 11-h is connected with the terminal 11-i; the terminal 11-j and the terminal 11-k are connected; the terminal 11-l is connected with the terminal 11-m; the terminals 11-n and 11-o are connected. The terminal 12-a and the terminal 12-b are connected; the terminals 12-c and 12-d are connected; the terminals 12-e and 12-f are connected; the endpoints 12-g are connected with the endpoints 12-h; the terminals 12-i and 12-j are connected; the terminal 12-k is connected with the terminal 12-l; the terminals 12-m and 12-n are connected. The terminal 22-b and the terminal 22-c are connected; the end points 22-d and 22-e are connected; the end point 22-f is connected with the end point 22-g; the end point 22-h is connected with the end point 22-i; the terminals 22-j and 22-k are connected. The terminal 21-a and the terminal 21-b are connected; the terminals 21-c and 21-d are connected; the terminals 21-e and 21-f are connected; the endpoints 21-g and 21-h are connected; the terminals 21-i and 21-j are connected.
For more details on the integrated transformer of fig. 1A and 1B, reference may be made to a similar structure disclosed in taiwan patent application No. 108114413 by the inventor of the present disclosure, from which other features of the integrated transformer of the present disclosure may be known by those skilled in the art.
Fig. 2A-2C are block diagrams of an embodiment of a crossbar structure of the present disclosure. The intersection 200 corresponds to the boxed area 50 of FIG. 1A and the boxed area 60 of FIG. 1B. More specifically, the through structure 201 connects the terminal 11-b and the terminal 11-c; the pass-through structure 202 connects the terminals 21-e and 21-f; the through structure 203 connects the terminals 21-c and 21-d; and through structure 204 connects terminals 11-d and terminals 11-e. Fig. 2B shows one of the metal layers of the cross-over structure 200, and fig. 2C shows another metal layer of the cross-over structure 200.
As shown in fig. 2A to 2C, the intersection structure 200 includes a line segment 210, a line segment 220, a line segment 230, a line segment 240, a line segment 250, a line segment 260, and a line segment 270. Line 210, line 220, line 230, line 240, and line 250 are implemented in a first metal layer, and line 260 and line 270 are implemented in a second metal layer. Line segment 220 includes sub-line segment 220-1 and sub-line segment 220-2. Line segment 230 includes sub-line segment 230-1, sub-line segment 230-2, and sub-line segment 230-3. Line segment 260 includes sub-line segment 260-1, sub-line segment 260-2, and sub-line segment 260-3. Line segment 270 includes sub-line segment 270-1 and sub-line segment 270-2. The line segment 260 connects the line segment 210 and the line segment 250 through the through structure 201 and the through structure 204, so that the line segment 210, the line segment 260 and the line segment 250 form a first conductive line. Similarly, the line segment 270 connects the line segment 220 and the line segment 240 through the through structure 202 and the through structure 203, so that the line segment 220, the line segment 270 and the line segment 240 form a second conductive line.
The line segment 260 spans the line segment 220 and the line segment 230, in other words, the first conductive line spans the second conductive line and the line segment 230. Line segment 270 spans line segment 230, in other words, the second conductive line spans line segment 230. Referring to fig. 1A and 1B and fig. 2A to 2C, the line segment 230 and the first conductive line are part of the first inductor, and the second conductive line is part of the second inductor.
Please refer to fig. 2B. The included angle theta between the sub-line segment 220-1 and the sub-line segment 220-221Substantially 90 degrees. The angle theta between the sub-line segment 230-1 and the sub-line segment 230-222Substantially 90 degrees. The angle theta between the sub-line segment 230-2 and the sub-line segment 230-323Substantially 90 degrees.
Please refer to fig. 2C. The included angle theta between the sub-line segment 260-1 and the sub-line segment 260-224Substantially 90 degrees. The angle θ between the sub-line 260-2 and the sub-line 260-325Substantially 90 degrees. The included angle theta between the sub-line segment 270-1 and the sub-line segment 270-226Substantially 90 degrees.
Fig. 3A-3C are block diagrams of another embodiment of a crossbar structure of the present disclosure. The intersection 300 corresponds to the boxed area 50 of FIG. 1A and the boxed area 60 of FIG. 1B. More specifically, through structure 301 connects terminal 11-b and terminal 11-c; through structure 302 connects endpoints 21-e and 21-f; pass-through structure 303 connects endpoints 21-c and 21-d; and through structure 304 connects terminals 11-d and terminals 11-e. Fig. 3B shows one of the metal layers of the cross-over structure 300, and fig. 3C shows another metal layer of the cross-over structure 300.
As shown in fig. 3A to 3C, the intersection structure 300 includes a line segment 310, a line segment 320, a line segment 330, a line segment 340, a line segment 350, a line segment 360, and a line segment 370. Line 310, line 320, line 330, line 340, and line 350 are implemented in a first metal layer, while line 360 and line 370 are implemented in a second metal layer. Line segment 320 includes sub-line segment 320-1, sub-line segment 320-2, and sub-line segment 320-3. Line segment 330 includes sub-line segment 330-1, sub-line segment 330-2, sub-line segment 330-3, and sub-line segment 330-4. Line segment 360 includes sub-line segment 360-1, sub-line segment 360-2, sub-line segment 360-3, and sub-line segment 360-4. Line segment 370 includes sub-line segment 370-1, sub-line segment 370-2, and sub-line segment 370-3. The line segment 360 connects the line segment 310 and the line segment 350 through the through structure 301 and the through structure 304, so that the line segment 310, the line segment 360 and the line segment 350 form a first conductive line. Similarly, the line segment 370 connects the line segment 320 and the line segment 340 through the through structures 302 and 303, so that the line segment 320, the line segment 370 and the line segment 340 form a second conductive line.
The line segment 360 crosses the line segment 320 and the line segment 330, i.e., the first conductive line crosses the second conductive line and the line segment 330. Line segment 370 spans line segment 330, in other words, the second conductive line spans line segment 330. Referring to fig. 1A and 1B and fig. 3A to 3C, the line segment 330 and the first conductive line are part of the first inductor, and the second conductive line is part of the second inductor.
Please refer to fig. 3A. The angle θ between the sub-line segment 320-2 and the sub-line segment 360-231Substantially 90 degrees. The angle θ between the sub-line segment 330-3 and the sub-line segment 370-232Substantially 90 degrees.
Please refer to fig. 3B. Sub-line segment 320-1 and sub-lineAngle theta between line segments 320-233Substantially 135 degrees. The angle θ between the sub-line segment 320-2 and the sub-line segment 320-334Substantially 135 degrees. The angle theta between the sub-line segment 330-2 and the sub-line segment 330-335Substantially 135 degrees. The angle θ between the sub-line segment 330-3 and the sub-line segment 330-436Substantially 135 degrees.
Please refer to fig. 3C. The included angle theta between the sub-line segment 360-1 and the sub-line segment 360-237Substantially 135 degrees. The included angle theta between the sub-line segment 360-2 and the sub-line segment 360-338Substantially 135 degrees. The angle θ between the sub-line 370-2 and the sub-line 370-339Substantially 135 degrees. Similarly, the included angle between sub-line segment 370-1 and sub-line segment 370-2 is substantially 135 degrees.
Fig. 4A to 4C are structural diagrams of an embodiment of a cross structure of the present disclosure. Fig. 4A shows the complete crossover structure 400. Fig. 4B shows one of the metal layers of the cross-over structure 400, and fig. 4C shows another metal layer of the cross-over structure 400.
As shown in fig. 4A to 4C, the intersection structure 400 includes a line segment 410, a line segment 420, a line segment 430, a line segment 440, a line segment 450, a line segment 460, a line segment 470, and a line segment 480. Line 410, line 420, line 430, line 440, line 450, and line 460 are implemented in a first metal layer, and line 470 and line 480 are implemented in a second metal layer. Line segment 410 includes sub-line segment 410-1, sub-line segment 410-2, and sub-line segment 410-3. Line segment 420 includes sub-line segment 420-1, sub-line segment 420-2, and sub-line segment 420-3. Line section 470 includes sub-line section 470-1 and sub-line section 470-2. Line segment 480 includes sub-line segment 480-1 and sub-line segment 480-2. Line 470 connects line 430 and line 450 through structure 401 and structure 402, such that line 430, line 470 and line 450 form a first conductive line. Similarly, the line segment 480 connects the line segment 440 and the line segment 460 through the through structure 403 and the through structure 404, so that the line segment 440, the line segment 480 and the line segment 460 form a second conductive line.
In some embodiments, the crossover structure 400 may be applied to an integrated transformer or integrated inductor, with fig. 4A showing the first, second, third, and fourth turns (top to bottom) of the integrated transformer or integrated inductor. More specifically, sub-line segment 410-1, line segment 450, and sub-line segment 470-2 are part of the first turn; segment 420-1, segment 460, and segment 480-2 are part of a second turn; segment 430 and segment 410-3 are part of the third turn; line segment 440 and sub-line segment 420-3 are part of the fourth turn. Line section 470 and sub-line section 410-2 are used to connect the first turn and the third turn. Line 480 and sub-line 420-2 are used to connect the second and fourth turns.
Please refer to fig. 4B. The included angle theta between the sub-line segment 410-1 and the sub-line segment 410-241Substantially 90 degrees. The angle theta between the sub-line segment 410-2 and the sub-line segment 410-342Substantially 90 degrees. The included angle theta between the sub-line segment 420-1 and the sub-line segment 420-243Substantially 90 degrees. The included angle theta between the sub-line segment 420-2 and the sub-line segment 420-344Substantially 90 degrees.
Please refer to fig. 4C. The included angle theta between the sub-line segment 480-1 and the sub-line segment 480-245Substantially 90 degrees. Similarly, the included angle between sub-line 470-1 and sub-line 470-2 is substantially 90 degrees.
Fig. 5A-5C are block diagrams of an embodiment of a crossbar structure of the present disclosure. Fig. 5A shows the complete crossover structure 500. Fig. 5B shows one metal layer of the cross-over structure 500, and fig. 5C shows another metal layer of the cross-over structure 500.
As shown in fig. 5A to 5C, the intersection 500 includes a line segment 510, a line segment 520, a line segment 530, a line segment 540, a line segment 550, a line segment 560, a line segment 570, a line segment 580, a line segment 585, a line segment 590, and a line segment 595. Line 510, line 520, line 530, line 540, line 550, and line 570 are implemented in a first metal layer, and line 580, line 585, line 590, and line 595 are implemented in a second metal layer. Line 540 includes sub-line 540-1, sub-line 540-2, and sub-line 540-3. Line segment 580 includes sub-line segment 580-1, sub-line segment 580-2, and sub-line segment 580-3. Segment 580 connects segment 510 and segment 570 through the through structure 501 and through structure 502, such that segment 510, segment 580, and segment 570 form a first conductive line. Similarly, the line 585 connects the line 520 and the line 550 through the through structure 503 and the through structure 504, such that the line 520, the line 585 and the line 550 form a second conductive line. Similarly, the line 590 connects the line 530 and the line 560 by the through structure 505 and the through structure 506, so that the line 530, the line 590 and the line 560 form a third conductive line. Segment 595 is connected to segment 550 by a through structure 507.
The line 580 crosses the line 540, the line 550 and the line 560, in other words, the first conductive line crosses the line 540, the second conductive line and the third conductive line. Line 585 crosses line 540, in other words, the second conductive line crosses line 540. Line 590 crosses line 540, in other words, the third conductive line crosses line 540. Line segment 510, line segment 520, line segment 530, sub-line segment 540-1, sub-line segment 540-3, line segment 550, line segment 560, line segment 570, sub-line segment 580-1, sub-line segment 580-3, line segment 585, line segment 590, and line segment 595 are substantially parallel. Sub-segment 540-2 and sub-segment 580-2 are substantially parallel.
In some embodiments, the crossover structure 500 may be applied to an integrated transformer or integrated inductor, with fig. 5A showing the first, second, third, and fourth turns (top to bottom) of the integrated transformer or integrated inductor. More specifically, line segment 510, sub-line segment 540-3, and sub-line segment 580-1 are part of the first turn; segment 520, segment 550, segment 585, and segment 595 are part of the second turn; segment 530, segment 560, and segment 590 are part of the third turn; sub-segment 540-1, segment 570, and sub-segment 580-3 are part of the fourth turn. Line segment 580 and sub-line segment 540-2 are used to connect the first and fourth turns.
Please refer to fig. 5B and 5C. The included angle theta between the sub-line segment 540-1 and the sub-line segment 540-251Substantially 90 degrees. The angle theta between the sub-line 540-2 and the sub-line 540-352Substantially 90 degrees. The included angle theta between the sub-line segment 580-1 and the sub-line segment 580-253Substantially 90 degrees. The included angle theta between the sub-line segment 580-2 and the sub-line segment 580-354Substantially 90 degrees.
It should be noted that the shapes, sizes, proportions and the like of the elements in the drawings are illustrative only, and are not intended to limit the invention, which is understood by those skilled in the art. Although the embodiments of the present invention have been described above, the embodiments are not intended to limit the present invention, and those skilled in the art can make variations on the technical features of the present invention according to the explicit or implicit contents of the present invention, and all such variations may fall within the scope of the patent protection sought by the present invention.
Claims (10)
1. A cross structure applied to an integrated transformer comprises:
a first line segment, a second line segment, a third line segment, a fourth line segment, and a fifth line segment, wherein the first line segment, the second line segment, the third line segment, the fourth line segment, and the fifth line segment are formed on a first metal layer of a semiconductor structure; and
a sixth line segment and a seventh line segment, wherein the sixth line segment and the seventh line segment are formed on a second metal layer of the semiconductor structure;
the sixth line segment is connected with the first line segment and the fifth line segment through a plurality of penetrating structures, and the first line segment, the fifth line segment and the sixth line segment form a first lead;
the seventh line segment is connected with the second line segment and the fourth line segment through a plurality of penetrating structures, and the second line segment, the seventh line segment and the fourth line segment form a second lead;
the first metal layer is not equal to the second metal layer, the integrated transformer comprises a first inductor and a second inductor, the first lead and the third line segment are part of the first inductor, the second lead is part of the second inductor, the first lead crosses the second lead and the third line segment, and the second lead crosses the third line segment.
2. The intersection structure of claim 1, wherein the sixth line segment comprises a first sub-line segment and a second sub-line segment, and an included angle between the first sub-line segment and the second sub-line segment is 90 degrees.
3. The cross-structure of claim 2 wherein the third line segment comprises a third sub-line segment and a fourth sub-line segment, and the first sub-line segment is parallel to the third sub-line segment and the second sub-line segment is parallel to the fourth sub-line segment.
4. The intersection structure of claim 1, wherein the sixth line segment comprises a first sub-line segment and a second sub-line segment, and an included angle between the first sub-line segment and the second sub-line segment is 135 degrees.
5. The intersection structure of claim 4, wherein the second line segment comprises a third sub-line segment, the third line segment comprises a fourth sub-line segment, and the seventh line segment comprises a fifth sub-line segment, and the first sub-line segment is perpendicular to the third sub-line segment, and the fourth sub-line segment is perpendicular to the fifth sub-line segment.
6. A crossover structure for use in an integrated transformer or an integrated inductor, comprising:
a first line segment, a second line segment, a third line segment, a fourth line segment, a fifth line segment, and a sixth line segment, wherein the first line segment, the second line segment, the third line segment, the fourth line segment, the fifth line segment, and the sixth line segment are fabricated on a first metal layer of a semiconductor structure; and
a seventh line segment and an eighth line segment, wherein the seventh line segment and the eighth line segment are formed on a second metal layer of the semiconductor structure;
the seventh line segment is connected with the third line segment and the fifth line segment through a plurality of penetrating structures, and the third line segment, the fifth line segment and the seventh line segment form a first lead;
the eighth line segment is connected with the fourth line segment and the sixth line segment through a plurality of penetrating structures, and the fourth line segment, the sixth line segment and the eighth line segment form a second lead;
wherein the first metal layer is not equal to the second metal layer, the first conductive line crosses the first line segment and the second line segment, and the second conductive line crosses the first line segment and the second line segment.
7. The crossover structure of claim 6, wherein the integrated transformer or the integrated inductor comprises, in order, a first turn, a second turn, a third turn, and a fourth turn, the seventh segment connecting the first turn and the third turn, and the eighth segment connecting the second turn and the fourth turn.
8. The intersection structure of claim 6, wherein the seventh line segment comprises a first sub-line segment and a second sub-line segment, and an included angle between the first sub-line segment and the second sub-line segment is 90 degrees.
9. A crossover structure for use in an integrated transformer or an integrated inductor, comprising:
a first line segment, a second line segment, a third line segment, a fourth line segment, a fifth line segment, a sixth line segment, and a seventh line segment, wherein the first line segment, the second line segment, the third line segment, the fourth line segment, the fifth line segment, the sixth line segment, and the seventh line segment are fabricated on a first metal layer of a semiconductor structure; and
an eighth line segment, a ninth line segment, and a tenth line segment, wherein the eighth line segment, the ninth line segment, and the tenth line segment are formed on a second metal layer of the semiconductor structure;
the eighth line segment is connected with the first line segment and the seventh line segment through a plurality of penetrating structures, and the first line segment, the seventh line segment and the eighth line segment form a first lead;
the ninth line segment is connected with the second line segment and the fifth line segment through a plurality of penetrating structures, and the second line segment, the fifth line segment and the ninth line segment form a second lead;
the tenth line segment is connected with the third line segment and the sixth line segment through a plurality of penetrating structures, and the third line segment, the sixth line segment and the tenth line segment form a third lead;
wherein the first metal layer is not equal to the second metal layer, the first conductive line crosses the fourth line segment, the second conductive line and the third conductive line, the second conductive line crosses the fourth line segment, and the third conductive line crosses the fourth line segment.
10. The crossover structure of claim 9, wherein the integrated transformer or the integrated inductor comprises a first turn, a second turn, a third turn, and a fourth turn in that order, the eighth segment connecting the first turn and the fourth turn.
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| CN1551252A (en) * | 2003-05-16 | 2004-12-01 | ���µ�����ҵ��ʽ���� | Mutual induction circuit |
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| TWI469160B (en) * | 2014-04-23 | 2015-01-11 | Realtek Semiconductor Corp | Integrated stacked transformer |
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