CN1389592A - 用于加热衬底的方法 - Google Patents
用于加热衬底的方法 Download PDFInfo
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- CN1389592A CN1389592A CN02120077A CN02120077A CN1389592A CN 1389592 A CN1389592 A CN 1389592A CN 02120077 A CN02120077 A CN 02120077A CN 02120077 A CN02120077 A CN 02120077A CN 1389592 A CN1389592 A CN 1389592A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/541—Heating or cooling of the substrates
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
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- Chemical & Material Sciences (AREA)
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- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Vapour Deposition (AREA)
- Surface Treatment Of Glass (AREA)
- Resistance Heating (AREA)
- Physical Vapour Deposition (AREA)
- Radiation-Therapy Devices (AREA)
- Re-Forming, After-Treatment, Cutting And Transporting Of Glass Products (AREA)
Abstract
本发明涉及一种用于加热衬底的方法和装置,其中要被涂覆的衬底的要被涂覆的表面被放置在加热装置上,所述加热装置用玻璃陶瓷板盖住,并具有和所述衬底匹配的槽,所述衬底从下方被加热到进行涂覆所需的处理温度,以及所述衬底从加热装置上被除去,并被引入涂覆室内进行涂覆。按照本发明的装置用于加热衬底,特别是玻璃衬底,所述衬底随后被涂覆。
Description
技术领域
本发明涉及一种用于加热衬底的方法。本发明还涉及一种外部预先加热的方法。
背景技术
在常规的尤其是用于加热玻璃部件的方法中,加热以利用高的能量和花费大量时间的方法进行。
发明内容
本发明的目的在于提供一种经济的对环境无不利影响的用于加热衬底的方法。
本发明的目的是通过一种用于加热衬底的方法实现的,其中
a)要被涂覆的衬底的要被涂覆的表面被放置在加热装置上,所述加热装置用玻璃陶瓷板盖住,并具有和所述衬底匹配的槽,
b)所述衬底从下方被加热到进行涂覆所需的处理温度,以及
c)所述衬底从加热装置上被除去,并被引入涂覆室内进行涂覆。
按照本发明的装置大大缩短了用于涂覆的处理时间。所述的处理是节能的。加热能够减小对涂覆装置的磨损。所述加热是比较均匀的。通过加热能够改善涂覆的质量。在不影响处理时间的条件下可以实现所需的温度调节。这种处理能够得到稳定的处理管理。
本发明的一种优选的结构包括在具有衬底保持器的玻璃陶瓷板中的槽。考虑到玻璃陶瓷板的低的导热率,其尤其适合于所述的方法。
本发明的一种优选的结构是一种玻璃陶瓷板,其包括至少两个具有不同开口的彼此叠置的板。如果具有不同尺寸的开口的玻璃陶瓷板彼此叠置,则形成衬底保持器。此外,使用两个板可以减少热损失。还使用衬底保持器的生产更容易。
本发明的优选结构使得所述处理能够在500℃-800℃的范围内调节温度。在这个温度范围内能够获得好的结果。
按照本发明,制备一种具有至少一层的要被涂覆的衬底。
按照本发明,所述衬底的涂覆包括至少一种以下的处理:CVD(化学蒸汽淀积),PVD(物理蒸汽淀积),PECVD(等离子体增强的化学蒸汽淀积),PICVD(等离子体脉冲化学蒸汽淀积),LPCVD(低压化学蒸汽淀积)或TCVD(热化学蒸汽淀积)。
按照本发明,提供一种用于加热衬底的装置,所述加热装置被玻璃陶瓷板覆盖,并具有和所述衬底匹配的槽。
本发明的优选的结构在于在具有衬底保持器的玻璃陶瓷板中的槽。匹配的衬底保持器可以节省相当可观的能量。
本发明的一种优选的结构在于一种加热装置,其包括至少两个互相叠置的板,所述两个板具有不同的开口。这样可以减少热损失。
本发明的一种优选的结构是一种装置,其中加热辐射器是红外高温辐射器。这些高温辐射器具有较长的使用寿命。
按照本发明的装置用于加热按照以下步骤被涂覆的衬底。
按照本发明,提供一种用于加热玻璃衬底的装置。
附图说明
下面参照附图和例子更详细地说明本发明。
说明书附图中包括一个图。
所述附图表示用于加热衬底的装置。
具体实施方式
用于加热玻璃衬底的装置包括加热装置,两个玻璃陶瓷板和红外高温辐射器,所述装置在500℃的温度下工作。上游的热量使得每小时可以涂覆5300个零件。
对照例
在常规的方法中,其中衬底被在涂覆设备中加热,每小时能够涂覆3200件。
在所述的例子和所述的对照例之间的对比说明,使用按照本发明的方法,涂覆衬底的产量提高65%。用于加热的能量消耗降低50%。
附图表示用于衬底的本发明的加热装置。用于加热衬底的装置1具有玻璃陶瓷板2,其用于盖住加热装置3。玻璃陶瓷板2具有槽4,其和要被保持的衬底匹配。槽4相应于衬底保持器。玻璃陶瓷板2包括至少两个板,它们被宽松地铺在彼此的顶上,并具有两个不同的开口4。被设置在加热装置3的内部区域中的加热辐射器3是红外线高温辐射器。
Claims (12)
1.一种用于加热衬底的方法,其中
a)要被涂覆的衬底的要被涂覆的表面被放置在加热装置上,所述加热装置用玻璃陶瓷板盖住,并具有和所述衬底匹配的槽,
b)所述衬底从下方被加热到进行涂覆所需的处理温度,以及
c)所述衬底从加热装置上被除去,并被引入涂覆室内进行涂覆。
2.如权利要求1所述的方法,其中在玻璃陶瓷板中的槽具有衬底保持器。
3.如权利要求1或2所述的方法,其中所述玻璃陶瓷板包括至少两个板,它们被宽松地相互叠置,所述两个板具有不同的开口。
4.如权利要求1至3至少一个所述的方法,其中在加热装置的内部区域内的温度范围是从500℃到800℃
5.如权利要求1至4至少一个所述的方法,其中所述衬底被涂覆至少一层。
6.如权利要求1至5至少一个所述的方法,其中所述涂覆包括以下处理中的至少一个:CVD(化学蒸汽淀积),PVD(物理蒸汽淀积),PECVD(等离子体增强的化学蒸汽淀积),PICVD(等离子体脉冲化学蒸汽淀积),LPCVD(低压化学蒸汽淀积)或TCVD(热化学蒸汽淀积)。
7.一种用于加热衬底的装置,其中所述加热装置被玻璃陶瓷板覆盖,并具有和所述衬底匹配的槽。
8.如权利要求7所述的装置,其中在玻璃陶瓷板中的槽具有衬底保持器。
9.如权利要求7或8所述的装置,其中所述加热装置包括至少两个板,它们被宽松地相互叠置,并且所述两个板具有不同的开口。
10.如权利要求7至9至少一个所述的装置,其中所述热辐射器是红外高温辐射器。
11.一种用于加热衬底的装置的用途,所述衬底在加热之后被涂覆。
12.一种用于加热玻璃衬底的装置的用途。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10125675.2 | 2001-05-25 | ||
DE10125675A DE10125675C1 (de) | 2001-05-25 | 2001-05-25 | Verfahren zur Aufheizung von Substraten |
Publications (1)
Publication Number | Publication Date |
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CN1389592A true CN1389592A (zh) | 2003-01-08 |
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Application Number | Title | Priority Date | Filing Date |
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CN02120077A Pending CN1389592A (zh) | 2001-05-25 | 2002-05-24 | 用于加热衬底的方法 |
Country Status (5)
Country | Link |
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US (2) | US6511717B2 (zh) |
EP (1) | EP1262575B1 (zh) |
JP (1) | JP2002363746A (zh) |
CN (1) | CN1389592A (zh) |
DE (2) | DE10125675C1 (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102123850A (zh) * | 2008-10-13 | 2011-07-13 | Eos有限公司电镀光纤系统 | 用于制造三维物体的装置用的框架和具有这样框架的用于制造三维物体的装置 |
CN102560373A (zh) * | 2010-12-16 | 2012-07-11 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 基片加热腔室、使用基片加热腔室的方法及基片处理设备 |
CN112921278A (zh) * | 2021-01-04 | 2021-06-08 | 北京航空航天大学 | 基于eb-pvd的高温合金单晶叶片叶尖的修复方法 |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CA2432836A1 (en) * | 2003-06-13 | 2004-12-13 | Robert W. Langlois | Method of powder coating |
KR102164611B1 (ko) * | 2014-07-02 | 2020-10-12 | 어플라이드 머티어리얼스, 인코포레이티드 | 매립형 광섬유들 및 에폭시 광학 확산기들을 사용하는 기판들의 온도 제어를 위한 장치, 시스템들, 및 방법들 |
US10973088B2 (en) | 2016-04-18 | 2021-04-06 | Applied Materials, Inc. | Optically heated substrate support assembly with removable optical fibers |
Family Cites Families (9)
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US4081313A (en) * | 1975-01-24 | 1978-03-28 | Applied Materials, Inc. | Process for preparing semiconductor wafers with substantially no crystallographic slip |
JPS56167332A (en) * | 1980-05-26 | 1981-12-23 | Fujitsu Ltd | Manufacture of semiconductor device |
US4350578A (en) * | 1981-05-11 | 1982-09-21 | International Business Machines Corporation | Cathode for etching |
JPS6169116A (ja) * | 1984-09-13 | 1986-04-09 | Toshiba Ceramics Co Ltd | シリコンウエハ−の連続cvdコ−テイング用サセプター |
US4978567A (en) * | 1988-03-31 | 1990-12-18 | Materials Technology Corporation, Subsidiary Of The Carbon/Graphite Group, Inc. | Wafer holding fixture for chemical reaction processes in rapid thermal processing equipment and method for making same |
US5137610A (en) * | 1991-04-15 | 1992-08-11 | Motorola, Inc. | Sputter chamber with extended protection plate and method of use |
JPH06101050A (ja) * | 1991-10-17 | 1994-04-12 | Toshiba Mach Co Ltd | Lcdガラス基板用常圧cvd装置 |
JP2701767B2 (ja) * | 1995-01-27 | 1998-01-21 | 日本電気株式会社 | 気相成長装置 |
US5976258A (en) * | 1998-02-05 | 1999-11-02 | Semiconductor Equipment Group, Llc | High temperature substrate transfer module |
-
2001
- 2001-05-25 DE DE10125675A patent/DE10125675C1/de not_active Expired - Fee Related
-
2002
- 2002-04-12 DE DE50201384T patent/DE50201384D1/de not_active Expired - Fee Related
- 2002-04-12 EP EP20020007695 patent/EP1262575B1/de not_active Expired - Lifetime
- 2002-05-01 JP JP2002129481A patent/JP2002363746A/ja active Pending
- 2002-05-03 US US10/139,298 patent/US6511717B2/en not_active Expired - Fee Related
- 2002-05-24 CN CN02120077A patent/CN1389592A/zh active Pending
- 2002-10-04 US US10/264,406 patent/US6642484B2/en not_active Expired - Fee Related
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102123850A (zh) * | 2008-10-13 | 2011-07-13 | Eos有限公司电镀光纤系统 | 用于制造三维物体的装置用的框架和具有这样框架的用于制造三维物体的装置 |
CN102123850B (zh) * | 2008-10-13 | 2014-05-21 | Eos有限公司电镀光纤系统 | 用于制造三维物体的装置用的框架和具有这样框架的用于制造三维物体的装置 |
CN102560373A (zh) * | 2010-12-16 | 2012-07-11 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 基片加热腔室、使用基片加热腔室的方法及基片处理设备 |
CN112921278A (zh) * | 2021-01-04 | 2021-06-08 | 北京航空航天大学 | 基于eb-pvd的高温合金单晶叶片叶尖的修复方法 |
CN112921278B (zh) * | 2021-01-04 | 2022-05-17 | 北京航空航天大学 | 基于eb-pvd的高温合金单晶叶片叶尖的修复方法 |
Also Published As
Publication number | Publication date |
---|---|
DE50201384D1 (de) | 2004-12-02 |
US20030026901A1 (en) | 2003-02-06 |
EP1262575A1 (de) | 2002-12-04 |
DE10125675C1 (de) | 2002-10-02 |
US6511717B2 (en) | 2003-01-28 |
JP2002363746A (ja) | 2002-12-18 |
US6642484B2 (en) | 2003-11-04 |
US20020176942A1 (en) | 2002-11-28 |
EP1262575B1 (de) | 2004-10-27 |
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