CN1340915A - 声波谐振器及在温度变化时运行其以保持谐振的方法 - Google Patents
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Abstract
声谐振器(10;110;和210)包括至少部分地补偿通过电极压电叠层(18)引入的温度感应效应的铁磁补偿器(20;120;和220)。该补偿器具有正频率温度系数,而叠层具有负频率温度系数。通过正确选择补偿器的厚度,可以抵消对谐振作用的感应温度。可替换的是,可以选择该厚度以提供所需的正或负的复合频率温度系数。在优选的实施例中,补偿器由镍铁合金形成,在最为优选的实施例中该合金为大约35%的镍和大约65%的铁。为了防止在铁磁补偿器中的过度的电磁损耗,可以加入金属镀层(230)以至少部分地包围补偿器。
Description
技术领域
一般地说本发明涉及声波谐振器，更具体地说涉及控制该声波谐振器的谐振频率的方法。
背景技术
由薄膜形成的声波谐振器应用在要求精确地控制频率的许多应用场合中。薄膜体声波谐振器(FBAR)或层叠薄膜体声波谐振器(SBAR)都可以用作在蜂窝电话或其它装置中作为滤波器，在这些装置中尺寸、成本和频率稳定性都是重要的因素。
FBAR包括在两个导电电极之间的压电材料的薄膜，同时SBAR还包括压电材料的附加层，每个层将两个电极分开。虽然固定安装的谐振器是公知的，但是通常还是通过周边支撑该层将FBAR或SBAR的有效层悬浮在空气中。在叠层的两侧空气/谐振器的界面部分地俘获在操作的过程中产生的能量。
当通过在由压电层间隔开的两个电极之间施加信号产生时变的电场时，压电材料将一些电能转换为以声波形式的机械能量。声波在与电场相同的方向上传播并在空气/谐振器界面上反射。为了正确地制造FBAR或SBAR，声波具有特定的机械谐振。
如上文所示，由于当FBAR或SBAR在其机械谐振频率运行时它可以起电谐振器的作用，因此它可以用作滤波器。在这种机械谐振频率上，对于在压电材料中的声的给定的相位速度，穿过谐振器的声波的半波长大致等于谐振器的总的厚度。声波谐振器可以独立使用或组合使用。例如，通过电连接几个谐振器形成带通滤波器来提供所需的滤波响应。有几种滤波器拓扑结构是可能的。一种有利的拓扑结构是半梯状结构，在这种结构中谐振器串联连接(串联谐振器)，并在串联谐振器中间是接地的并联谐振器。在制造串联谐振器时使其谐振频率大致高于并联谐振器的3％。由于可以使串联和并联的谐振器的压电层的厚度相同，因此通过在谐振器之间“共享”压电沉积层。
已经证明声波谐振器的重要特性是它能够保持谐振。由于如果温度的变化(ΔT)导致了谐振器的一个或多个层的波速的变化(ΔV)和/或厚度的变化(Δt)则产生频移(Δf)，因此当将声波谐振器放置在温度有变化的环境中时，已经证明存在问题。具体地说，谐振频率f0和频率的温度系数分别定义如下：
f0＝V/2t0 (1)
Δf/f0＝ΔV/V-Δt/t0 (2)
这里V是穿过声波谐振器的声波的速度，t0是谐振器的厚度。根据声波的波长如下定义厚度：
t0＝λ/2 (3)
这里λ是声波在它所穿过的介质中的声波的波长。在用于制造谐振器的材料中，厚度t0通常随着正的温度变化ΔT而增加。在另一方面，穿过材料的波的速度通常随着正的温度变化而降低。这两个系数相结合以形成一种称为负频率温度系数的现象。从等式(1)和(2)中可知，声波谐振器的谐振频率f0通常随着温度的增加而降低。这种谐振波动通常是一种不理想的特性。
补偿温度的变化的一种公知的方法是并入频率稳定电路。然而，蜂窝电话以及类似的装置的有限的空间限制了辅助电路的使用。在题为“Thin Film Resonators and Filters”(K.M.Lakin著，1999IEEE Ultrasonics Symposium June 1，1999)的论文中描述了另一种方法。这第二种方法应用于固体安装的谐振器(SMR)，该谐振器沿着支撑表面安装而不是通过外围支撑从支撑表面悬挂。通过SMR和基片之间形成反射体(通常为Bragg反射体)来实现在SMR和在其间形成谐振器的基片之间的声隔离。反射体是一种具有高指数和低指数的材料的交替的叠层，每层的厚度大约为SMR的谐振频率的波长的四分之一。根据第二种方法，如果应用二氧化硅(SiO2)来形成一特定指数的层，将根据SiO2的温度系数的结果进行温度补偿。然而，存在的问题是SiO2是亲水性的，因此SMR的性能可以受到潮湿的大气的损害。另一个问题是由于SiO2是作为四分之一波长层形成，因此目标谐振频率部分地确定了补偿水平。
因此需要一种声波谐振器和应用该声波谐振器的方法以在温度变化时保持谐振。
发明内容
一种声波谐振器包括具有负频率温度系数的电极压电叠层，通过将补偿器声耦合到电极压电叠层来至少部分地补偿该叠层。该补偿器由这样的一种材料形成，该材料具有使补偿器抵消温度引起效应对谐振的作用的特性，在此通过温度变化将这种作用感应到电极压电叠层。
在一个实施例中，补偿器是由铁磁材料形成。在更为可取的实施例中，该材料是镍铁合金，在一种最为可取的实施例中该合金由大约35％的镍和大约65％的铁组成。该补偿器应该具有正频率系数。作为采用补偿器的结果，选择补偿器的厚度以使对谐振作用的温度引起效应的幅值等于电极压电叠层的负频率温度系数对谐振的温度引起效应的幅值。作为一种实例，如果镍铁合金补偿器的厚度为3320埃，并且该叠层包括在厚度为15,200埃的铝氮层的对面上的厚度为1100埃的钼电极，则相信可以实现0ppm/℃的复合系数。
铁磁材料具有的缺点是在微波频率上具有较大的电极损耗。为防止这一点，应用钼镀层(flash layer)来包围铁磁合金并转移在其周围的电流。例如，可以在与电极压电叠层相对的补偿器的一侧上形成钼薄层(例如，200埃)。虽然可以应用其它的材料，但是在一优选实施例中其镀层材料与电极材料相同。
进一步参考优选实施例，补偿器和电极压电叠层都悬浮在基片的表面上。因此，它不需要包括Bragg反射体或其它的机构以使谐振层与基片接触。
相对于已有的通过电极压电叠层通常所具有的负频率温度系数进行补偿的装置，本发明的一个优点是本发明的补偿器的厚度是独立于所需的目标谐振频率的波长。这就是说，不是选择等于在Bragg反射器内的四分之一波长层的厚度，而是可以选择补偿器的厚度以适应补偿器的补偿能力。本发明的另一个优点是补偿器由金属形成，因此电极的电阻并不严重受到影响。然而另一个优点是可以应用与常规的用于构造电极的相同的湿蚀刻来蚀刻优选的镍铁合金。此外，补偿器不是亲水性的，因此它不会在潮湿的环境中受到损害。
附图说明
附图1所示为依据本发明的声波谐振器的侧面剖视图；
附图2所示为在附图1中所示的连接到电压源的声波谐振器的侧面剖视图；
附图3所示为依据本发明在晶片上形成在附图1所示的声波谐振器的侧面剖视图；以及
附图4所示为依据本发明的变型实施例在附图3中所示的声波谐振器的侧面剖视图。
发明实施方式
参考附图1，声波谐振器10的实例性的实施例包括一对相对的电极12和14。在正对的电极12和14之间是形成电极压电叠层18的压电体16。叠层18通常称为薄膜体声波谐振器(FBAR)。
在叠层18附近设置补偿器壳体20，该补偿器壳体20有利于在温度变化时稳定声波谐振器10的谐振频率。这可以通过从具有正频率温度系数的一种或多种材料形成补偿器壳体20来实现。正频率温度系数补偿形成电极压电叠层18的材料的负频率温度系数。
通常，压电体18由能够提供合理的更高的电机耦合常数和较低的介电常数的任何压电材料形成。可以应用的电介质材料的实例有ZnO、AIN和锆钛酸铅。电极12和14由导电材料构成，比如铝、金、钼、钛、钨等。形成压电体18和电极12和14的材料的特性随温度的变化而改变。这就导致谐振器10的谐振频率随着温度的增加而降低。具体地说，这些材料的速度特性随着温度的增加而降低，因此穿过叠层的声波的速度降低。此外，该材料的厚度随着温度增加而增加。
已经发现在谐振中对温度的变化起主要作用的是形成叠层的材料的速度特性的变化。因此，选择补偿器壳体20以得到一种速度特性，这种速度特性随着温度的变化正向地变化。因此，可取地是由基本为大致35％的镍和65％的铁的金属合金形成补偿器壳体20。这种合金是由International Nickel Company公司以INVAR的商标出售的。这种合金形成了相对于温度的变化厚度基本恒定的层。然而，速度特性随着温度的变化而进行正变化。在题为“Zero Sound Anomalyin a Ferromagnetic INVAR Alloy(INVAR合金中零声音异常)”(由Endoh等人著，Journal of the Physical Society of Japan，Vol.46，No.3，1979年3月，第806-814页)的论文中，给出的数据表明INVAR具有的+170ppm/℃的频率的温度系数。作为对比，在LIManosa等人的题为“Acoustic-mode Vibrational AnharmonicityRelated to the Anomalous Thermal Expansion of INVAR IronAlloys(INVAR铁合金的异常热扩散有关的声波模式振动非谐性)”(Physical Review B，The American Physical Society，Volume45，No.5,1 1992年二月，第2224-2236)所给出的数据中表明INVAR的频率的温度系数大致为+239ppm/℃。通过适当选择补偿器壳体20的厚度，可以形成基本等于零的复合的频率温度系数的谐振器10。可替换的是，可以将频率的复合温度系数的幅值设置为正或负值，因此谐振的变化与温度的变化成正比例或反比例。在这种方式中，根据具体的应用，谐振器10可以实际上具有任何所需的频率的热系数。
参考附图12，电压源22连接在电极12和14之间。通过电压源22在电极12和14之间产生的电场在压电体16内产生声波24。声波在平面26和28之间传播。平面26表示补偿器壳体20和周边环境的交界面。平面28表示电极14和周边环境的交界面。
如上文所指出，声波谐振器的每个层都具有随着温度变化的波速(V)和厚度(t)。还可以知道在声波谐振器内在平面26和28之间传播的声波的相位(φ)以声波谐振器的频率的函数进行变化。具体地说，在附图1和2的谐振器10内传播的声波的相位是：
φ＝2πf(t1/V1+t2/V2+t3/V3+t4/V4) (4)
这里t1和V1是关于底部电极14的特性，t2和V2是关于压电体16的特性，t3和V3是关于顶部电极12的特性，t4和V4是关于补偿器壳体20的特性。当φ＝π并在等式(4)中的括弧内的系数之总和固定时实现频率的稳定。在本发明的优选实施例中，通过使第四个系数(即，t4/V4)与其它的三个系数之和(即，t1/V1+t2/V2+t3/V3)反比例地变化来保持这个总和基本固定。
随着谐振器10的温度的增加，在压电体16中的声波24的速度V2降低而厚度t2增加。此外，当声波在电极12和14之间传播时声波速度如V1和V3所示分别降低而厚度t1和t3增加。然而，通过补偿器壳体20补偿所降低的声波的速度。具体地说在补偿器壳体20中的声波的速度V4随着温度的增加而增加。如果在补偿器壳体中的温度引起的变化幅值等于在电极压电叠层中的这种变化的幅值，则在平面26和28之间传播的声波的总的相位φ中将不存在明显的变化。因此，在温度出现变化时仍然维持谐振器10的谐振频率。
参考附图3，在特定的实施例中，应用常规的半导体工艺制造谐振器110。因此将谐振器110制造在硅晶片130上，该硅晶片130具有一个经蚀刻而形成腔132的表面。这通常应用KOH来除去几微米的硅来实现，在此称其为预开槽。选择通过KOH除去的硅的量以避免在随后的处理中对晶片130的结构损失。将含磷的硅酸盐玻璃134淀积在该腔体中并通过公知的机械装置磨平。在美国专利US6,060,181(Ruby等人，转让给本发明的受让人)中描述了淀积和随后的除去玻璃的过程。
在腔体132中形成玻璃134之后，将一个电极114设置在晶片130的表面上。在本实例中，应用溅射电极技术以形成大约1100埃厚度的钼层来制造电极114。这就得到了具有大约-45ppm/℃的负频率热系数的电极114。
通过在电极114附近淀积一层厚度大约为15200埃的AIN 116来形成压电体。这就产生了具有大约-25ppm/℃的负频率热系数的电极114。
然后将也是由钼形成的附加电极112淀积在AIN层116附近并淀积到大约1100埃。应用溅射淀积技术在电极112附近形成补偿器壳体120并形成到大约3320埃的厚度。补偿器壳体具有大约170ppm/℃的正频率温度系数。在制造的过程中，对元件112、116和120的边沿进行光刻蚀刻以使其彼此一致并与腔体132的边沿重合。因此，悬浮叠层的所有的点都具有相同的谐振频率f0。结果，可以防止由空间质量负载效应产生的接近的寄生谐振。
在淀积电极112和补偿器壳体120之后，在谐振器结构中蚀刻含磷的硅酸盐玻璃134以完成腔体132的构造。这可以通过应用稀的氢氟酸溶液实现。除去剩余的玻璃部分后剩下电极114坚固的部分，因此将谐振器10与晶片130间隔开。
这样，形成了具有大约0 ppm/℃的频率温度系数的谐振器110。因此，对于在-30℃到85℃的范围中的温度变化，在本实例中可以制造谐振器110以保持在大约1.9GHz的恒定的谐振频率。应用这种技术以形成从0.4至10GHz任何频率的谐振器。
参考附图4，所示的谐振器210的另一个实施例包括覆盖补偿器壳体220的镀层230。形成补偿器220的优选的材料是铁磁材料，这种材料具有较大的电损耗。这种损耗降低了谐振器的质量因子并且是有害的。包括镀层230以在补偿器壳体220周围形成较低损耗电流通路。镀层230覆盖补偿器壳体220所暴露的区域即没有设置在电极212附近的区域。虽然镀层230可以由任何导电材料形成，但是镀层230优选由与电极212和214相同的材料形成。对镀层进行光刻蚀刻构图以使在电极212的边沿上的镀层230的外部质量在硅基片232之上。这能够有效地阻止任何寄生谐振。
镀层230和电极212和214都由Mo形成并且每个的厚度大约1100埃。压电体216由具有大约-25ppm/℃的负频率热系数的AIN形成。因此，理想的是如果谐振器210具有大约0ppm/℃的频率温度系数，则补偿器壳体220必须具有足够的厚度以提供偏移的正频率温度系数。应用这种结构，硅晶片232的谐振器210将使谐振器具有在200MHz至10GHz范围内所选择的恒定的谐振频率，并可承受在-30℃至85℃的温度变化。
从前文的描述和附图中可看出本发明的各种改型对本领域的熟练技术人员是显然的。例如，上文的讨论涉及FBAR技术。然而，本发明可等效地应用到SBAR技术。此外，已示出的补偿器壳体是在与基片相对着的电极压电叠层的侧面上。但是补偿器壳体还可以直接形成在基片上或与该基片相接触的镀层上。因此，本发明并不限于上文所描述的示例性的说明，而是由附加的权利要求及其等效权利要求的整个范围来确定。
Claims (11)
1.一种声波谐振器(10；110；210)，包括：
基片(130；和232)；和
叠层(18)，将该叠层集成到所说的基片以使所说的叠层包括悬浮区域，所说的悬浮区域包括：
压电体(16；116和216)和电极(12和14；112和114；和212和214)，设置所说压电体和电极以将电场施加到在所说的压电体中，所说的压电体和电极具有一定的谐振频率和负频率温度系数；以及
补偿器(20；120和220)，该补偿器声耦合到所说的压电体和电极，所说的补偿器壳体由具有这样的特性的材料制成：通过该特性所说的补偿器至少部分地补偿对于所说的谐振的温度所引起的效应，其中所说的温度引起的效应是所说的负频率温度系数的函数。
2.权利要求1所述的声波谐振器，其中所说的补偿器(20；120和220)是铁磁层，并通过所说的电极(12；112；和212)中的一个电极将其与压电体(16；116；和216)间隔开，所说的铁磁层具有相关的正频率温度系数。
3.权利要求1或2所述的声波谐振器，其中所说的叠层(18)包括与所说的基片相接触的周围区域以支撑所说的悬浮区域，所说的补偿器(20；120和220)是一层镍铁合金。
4.权利要求1所述的声波谐振器，其中所说的叠层进一步包括在所说的补偿器(220)的一侧上与所说的电极(212和214)和所说的压电体(216)相对的金属镀层(230)。
5.权利要求1、2、3或4所述的声波谐振器，其中所说的叠层(18)是薄膜体型谐振器(FBAR)叠层。
6.权利要求1、2、3、4或5所述的声波谐振器，其中所说的补偿器(20；120和220)是由具有正频率温度系数的材料形成并具有一定的厚度以使由所说的补偿器在对所说的谐振作用感应的温度的幅值类似于作为所说的负频率温度系数的函数对所说的谐振作用的所说的温度感应的幅值。
7.权利要求1、2、3、4、5或6所述的声波谐振器，其中所说的基片(130；和132)是硅基片，以及其中所说的电极(12和14；112和114；和212和214)和补偿器(20；120和220)都是金属层。
8.一种制造声波谐振器(10；110和210)的方法，包括如下的步骤：
提供基片(130；和232)；和
在所说的基片上形成隔膜以使至少一部分所说的隔膜与基片悬浮接触，该隔膜包括：
(a)形成具有负频率温度系数的电极压电叠层(18)，和
(b)在所说的电极压电叠层附近形成补偿器层(20；120和220)，包括选择具有正频率温度系数的材料。
9.权利要求8所述的方法，其中包括选择所说的材料的所说的步骤(b)包括选择镍铁合金。
10.权利要求8或9的方法，其中所说的步骤(b)包括选择这样的厚度的层：使通过运行所说的电极压电叠层(18)对谐振作用的温度引起效应幅值与作为所说的补偿器层(20；120和220)的结果对所说的谐振作用的温度引起效应幅值相匹配。
11.权利要求8、9或10的方法，其中所说的形成所说的隔膜的步骤进一步包括(c)在与所说的电极压电叠层(18)相对的所说的补偿器层(20；120；和220)的一侧上形成金属镀层(230)。
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2001
- 2001-07-02 CN CN01122139.9A patent/CN1229917C/zh not_active Expired - Fee Related
- 2001-08-29 DE DE10142157A patent/DE10142157A1/de not_active Withdrawn
- 2001-08-30 JP JP2001261497A patent/JP3592276B2/ja not_active Expired - Fee Related
- 2001-11-08 US US10/008,838 patent/US6874212B2/en not_active Expired - Lifetime
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101958696A (zh) * | 2010-09-27 | 2011-01-26 | 张�浩 | 温度补偿薄膜体波谐振器及加工方法 |
| CN101958696B (zh) * | 2010-09-27 | 2013-04-17 | 张�浩 | 温度补偿薄膜体波谐振器及加工方法 |
| CN111988013A (zh) * | 2020-08-31 | 2020-11-24 | 诺思(天津)微系统有限责任公司 | 温补滤波器优化方法和温补滤波器、多工器、通信设备 |
| WO2023186160A1 (en) * | 2022-04-02 | 2023-10-05 | Ningbo Signatronic Technologies , Ltd. | Acousto-magnetic (am) anti-theft marker and use thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3592276B2 (ja) | 2004-11-24 |
| JP2002176334A (ja) | 2002-06-21 |
| US20020038989A1 (en) | 2002-04-04 |
| DE10142157A1 (de) | 2002-06-06 |
| CN1229917C (zh) | 2005-11-30 |
| US6420820B1 (en) | 2002-07-16 |
| US6874212B2 (en) | 2005-04-05 |
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