CN1316605C - Substrate for use in joining element - Google Patents

Substrate for use in joining element Download PDF

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Publication number
CN1316605C
CN1316605C CNB028083644A CN02808364A CN1316605C CN 1316605 C CN1316605 C CN 1316605C CN B028083644 A CNB028083644 A CN B028083644A CN 02808364 A CN02808364 A CN 02808364A CN 1316605 C CN1316605 C CN 1316605C
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substrate
layer
metal
welding
scolder
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CNB028083644A
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CN1509499A (en
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横山浩树
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Tokuyama Corp
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Tokuyama Corp
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    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
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  • Engineering & Computer Science (AREA)
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  • Condensed Matter Physics & Semiconductors (AREA)
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  • Die Bonding (AREA)
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Abstract

A substrate for use in joining an element which comprises a base substrate of aluminum nitride or the like, a gold electrode layer formed on the surface thereof, a metal layer comprising at least one metal selected from the group consisting of Ag, Cu, Ni and Pb formed on the gold electrode layer and, formed thereon, a layer comprising a soft solder having a low melting point such as an Au-Sn type solder having a gold content of 20 wt % or less. An element having an electrode is joined by placing the element in such a manner that the electrode is contacted with the solder layer of the above substrate and then soldering by reflow at a low temperature. The above substrate allows an element to be joined to the substrate with enhanced joining strength.

Description

Element welding substrate and manufacture method thereof
Technical field
The present invention relates to be used to weld, the substrate and the manufacture method thereof of retaining element.
Background technology
In recent years, along with popularizing of portable phone and optical communication, as the GaAs of the height of working in high frequency band output, high flow rate electric power is that FET, Si-Ge are that HBT, Si are that MOSFET or GaN are the base plate for packaging of semiconductor element such as laser diode, use ceramic substrate, so that reduce the high-frequency dielectric loss.In this ceramic substrate, the aluminium nitride sintered base plate is noticeable especially near semiconductor element because of its thermal conductivity height, thermal coefficient of expansion.
Usually, generally be under situation about element being welded on the ceramic substrates such as aluminum nitride sintered product, by metal-plated behind the first and second substrate metal layers that form firmly welding on the ceramic substrate, on this substrate metal layer, form gold electrode, scolder add ons on this gold electrode (reference (Japan) spy opens flat 7-94786 communique, the spy opens flat 10-242327 communique and Te Kai 2000-288770 communique).And, as the scolder that use this moment, generally use gold content for the melting point under the composition of about 80 weight % be 280 ℃ Au-Sn be scolder (below, be also referred to as ' Au-Sn of high concentration gold is a scolder '.Young's modulus is 59.2GPa (25 ℃ time)).And be the scolder addition method of scolder as the Au-Sn that uses above-mentioned high concentration gold, because the loading position of control element accurately, automation is also easy, so preferably adopt fusing to supply to the circumfluence method that the scolder on the substrate welds in advance.
Therefore, as the substrate of soldered elements, use the substrate that on the assigned position on the electrode of substrate layer, is pre-formed solder film mostly.For example, open to disclose in the 2000-288770 communique above-mentioned spy and on ceramic substrate, form the multi-layered electrode that substrate layer/plating Ni layer/plating Au layer etc. constitutes, ' orlop is the Au film at this electrode superimposed layer, prevent the diffuse metal layer at Au film superimposed layer, prevent from the diffuse metal layer to form the multilayer scolder of alternating layer at this with Au layer and Sn layer ' substrate, on this substrate, can have the semiconductor element of Au electrode by sufficient weld strength welding.In this communique,, for the Au-Sn of the overall weight of Au and Sn high concentration gold than with fusion the time is that the composition of scolder is identical, illustrated that preferably with Au/Sn be recently lamination Au layer and Sn layer of 70/30～76/24 weight as above-mentioned multilayer scolder.And, the space that the above-mentioned electroplate liquid that prevents that the diffuse metal layer from preventing to sneak into when the plating of plating Au layer etc. causes or the diffusion of impurity prevent the plating Au layer of the AuSn multilayer scolder corrosion substrate on this layer, simultaneously as the metal that constitutes this layer, illustrated and preferably used platinum family element, particularly Pt.
But, in recent years, in semiconductor element, the high outputization of design for the electricity that improves packing density and data send distance, the heat that element produces during use also increases.Such caloric value increases, and means that the variations in temperature when using increases, and the stress that brings the coefficient of thermal expansion differences because of substrate and element to cause causes the destruction problem of weld part.As the method that addresses this is that, proposed following method: (1) uses the lower scolder of melting point to carry out soldered, reduces to remain in the stress in the welding position of element and substrate when being cooled to room temperature after welding as far as possible; And (2) use the slicken solder of the ability with stress that results from the welding position that the variations in temperature of mitigation when using cause.
The method of above-mentioned (1) and (2) can be by using low melting point and slicken solder, is that the Sn content in alloys scolder that surpasses alloy that 80 weight % and its melting point be lower than 280 ℃ and constitute (below be also referred to as ' Au-Sn of high concentration tin is a scolder ') is realized at Au-Sn for example.But, in fact, forming on the substrate on the gold electrode, when the Au-Sn that forms high concentration tin was the scolder of the layer that constitutes of scolder and add ons, the melting point of scolder rose as can be known, and the melting characteristic of scolder worsens simultaneously.The reason that causes this phenomenon can be from Au-Sn structural diagram shown in Figure 1 (source: ' metal increases the practical two-dimentional alloy state atlas of number of the edition ' temporarily, the ア グ ネ of Co., Ltd., put down into distribution on October 10th, 4, the 92nd page) understand, can think the Au-Sn of high concentration tin be in the system film of solder layer or the system film after preservation in, gold atom in the gold electrode layer is diffused in this solder layer, be changed to the high composition of melting point, at the near interface of gold electrode and scolder, form the intermetallic compound that presents so-called AuSn or the fragile character of AuSn simultaneously.
The inventor considers to open by above-mentioned spy is set that (in other words the disclosed diffuse metal layer (below be also referred to as metal barrier) that prevents can or can not prevent gold diffusion as described above in the 2000-288770 communique, the Au-Sn of high concentration tin is the gold corrosion that scolder causes), it is the metal barrier of the Pt formation of 2 μ m that thickness is set on the gold electrode layer, the Au-Sn that trial forms high concentration tin thereon is the scolder rete, the additional scolder that has the element of gold electrode.Its result is improved though confirmed the melting point rising, and the melting characteristic of scolder also can improve, and distinguishes the problem that exists weld strength low.That is, when measuring weld strength, between metal barrier and solder layer, can cause and peel off, and distinguish that the shared intensity of tube core also is low to moderate 1.4kgf/mm by the shared tester of tube core (die sharetester) 2
Summary of the invention
The object of the present invention is to provide a kind of element welding to use substrate, scolder can be welded with high weld strength, have the gold electrode layer from the teeth outwards.
Another object of the present invention is to, a kind of binding member substrate is provided, this substrate surface has the gold electrode layer, and using the scolder of low melting point softness such as the Au-Sn of rich tin is scolder, can make element add scolder at low temperatures.
Another object of the present invention is to, the manufacture method of a kind of element welding with substrate is provided, scolder can be welded with high weld strength, have the gold electrode layer from the teeth outwards.
Other purposes of the present invention can become clear from following explanation.
The inventor has carried out deep research in order to solve above-mentioned problem.Its result, the substrate of the metal barrier of special metal formation is set on this gold electrode layer as the substrate that has formed the gold electrode layer from the teeth outwards, is that scolder is when coming the scolder of add ons using this substrate by high concentration tin Au-Sn, discovery can be welded at low temperatures, and the weld strength height of this moment.Then, find the further result of research according to this, find that it is scolder that such effect is not limited to use high concentration Au-Sn, also the In that can use gold content to be lower than 20 weight % is a scolder, thereby has finished the present invention.
Promptly, the application's first invention is an element welding substrate, it is characterized in that the laminated construction of the metal level that at least a metal that this gold electrode layer superimposed layer with the substrate that forms the gold electrode layer is from the teeth outwards selected constitutes from the group that Ag, Cu, Ni and Pb constitute.
Element of the present invention welding is characterised in that with substrate, and to use the Au-Sn that contains with high concentration tin be the Sn of scolder etc. or In is not more than the solder layer of the metal formation of 20 weight % as main component and gold content, the high weld strength of element can be welded.Element welding in the invention described above is used in the substrate, as the substrate that forms the gold electrode layer on the surface, use on the ceramic substrate of aluminium nitride as main component, lamination is first substrate layer of main component with Ti, is second substrate layer of main component and the metallized substrate of the electrode layer that gold constitutes with Pt successively, it is little to have the high-frequency dielectric loss of soldered elements when using, the strong feature of function that the heat that produces this moment is dispelled the heat.
The metal level that constitutes at least a metal of from the group that described Ag, Cu, Ni and Pb constitute, selecting have go back lamination with Au-Sn be the element welding of the amount of main component and the gold laminated construction that is lower than the solder layer that the metal of 20 weight % constitutes with substrate applicable to reflow soldering.And, the metal that forms solder layer contains Sn or In as main component, the amount of gold is lower than 20 weight %, Young's modulus in the time of 25 ℃ is lower than 50GPa, and melting point is lower than 280 ℃ element welding and has following feature with substrate: even soldered elements and long-term the use, solder side also is difficult to be damaged.
The application second invention is the manufacture method of element welding with substrate, it is characterized in that, has welded from the teeth outwards on its gold electrode layer of substrate of gold electrode layer, forms the metal level that at least a metal selected from the group that Ag, Cu, Ni and Pb constitute constitutes.In this manufacture method, by on the metal level that has formed at least a metal formation of from the group that Ag, Cu, Ni and Pb constitute, selecting, formation is the solder layer that main component and gold content are lower than the metal formation of 20 weight % with Sn or In, also can make the element welding substrate applicable to above-mentioned reflow soldering.
The application's the 3rd invention is the manufacture method of a kind of element welding with substrate, it is characterized in that, use on the solder layer of substrate in element welding, after lift-launch has the element of electrode applicable to above-mentioned reflow soldering, so that this electrode contacts described solder layer, thereby reflow soldering.According to above-mentioned manufacture method, for example can be lower than under 280 ℃ the low temperature, the welding of element high-accuracy high-efficiency rate ground.
The application's the 4th invention is the element welding substrate of making as stated above.The element welding of the application's the 4th invention can be used steadily in the long term with substrate.
Description of drawings
Fig. 1 is the Au-Sn structural diagram.
Fig. 2 is the representational profile of element welding of the present invention with substrate.
Each label has following implication in the accompanying drawing.
100: element welding substrate
200: the surface is formed with the substrate of gold electrode layer
201: the aluminum nitride sintered product substrate
202: with Ti is first substrate layer of main component
203: with Pt is second substrate layer of main component
204: the gold electrode layer
300: the barrier layer
400: by with Sn or In be main component and gold content be lower than the solder layer that the metal of 20 weight % constitutes
Embodiment
Element of the present invention welding has the laminated construction of the metal level that at least a metal that this gold electrode layer superimposed layer of the substrate that forms the gold electrode layer from the teeth outwards selects constitutes from the group that Ag, Cu, Ni and Pb constitute with substrate.Here, element refers to have electronic unit and semiconductor elements such as the resistance that can directly connect other electric wiring terminals or capacitor.
Element of the present invention welding with ' having formed the substrate of gold electrode layer from the teeth outwards ' of using in the substrate so long as formed on one part surface or whole surface that the gold that has as electrode function constitutes layer substrate just passable, be not particularly limited.The few viewpoint of high-frequency dielectric loss during from the use of welding semiconductor element preferably adopts the metallized substrate that has formed gold electrode on ceramic substrates such as aluminium nitride, aluminium, SiC, Si by metal-plated.Have again, in these metallized substrates, as described above, the gold electrode layer is general to be formed on the substrate metal layer that is welded on securely on the ceramic substrate directly or indirectly, for example in ceramic substrate, clean the electrode pattern that prints tungsten or the contour melting point metal of molybdenum cream formation on the thin plate, after with this figure and cleaning thin plate while sintering at aluminium, as required nickel dam is formed the refractory metal stratiform, and preferably form gold electrode thereon.In addition, be in the ceramic substrate of main component with the aluminium nitride, preferably use in aluminium nitride powder add sintering aid and be shaped after, on the substrate surface that sintering is crossed by formation such as sputtering method basically with electrode pattern identical shaped with the titanium be the metal level (first substrate layer) of main component after, same on this first substrate layer is second substrate layer of main component, the metallized substrate that obtains by formation gold electrode layers such as sputtering methods thereon then with platinum by formation such as sputtering methods.Use in the substrate in element welding of the present invention, the good viewpoint of heat dissipation characteristics of the heat that when the heat radiation soldered elements uses, produces, preferably adopting above-mentioned such aluminium nitride that obtains is metallized substrate.
Element welding of the present invention need form the metal level of selecting at least a metal to constitute with substrate from the group that Ag, Cu, Ni and Pb constitute on above-mentioned gold electrode layer.By forming such metal level,, can add the high scolder of weld strength at low temperatures being that low melting point such as scolder forms under the situation of the soft soldering bed of material and welding with the Au-Sn of high concentration tin on this layer.Can think this metal level have with the same effect of above-mentioned metal barrier (therefore, below abbreviate this metal level as barrier layer), and as the metal that is used for metal barrier, under the situation of using the most general platinum, fastening, can not carry out high-intensity welding with the pass of the solder metal kind of using.The thickness on this barrier layer is not particularly limited, but from the viewpoint of cost performance, is that 0.2～5 μ m is better, particularly is preferably 1～3 μ m.If the thickness of this layer is lower than 0.2 μ m, then effect descends, even and more than 5 μ m, roughly the same when its effect and 1～3 μ m.
Above-mentioned metal level (barrier layer) is not limited to the metal level of selecting at least a metal to constitute from the group that Ag, Cu, Ni and Pb constitute, it also can be the metal level that single metal constitutes, or the alloy or intermetallic compound or the solid solution that form by multiple metal, but from effect, the metal level that constitutes of Ag preferably.Have, the barrier layer does not need to cover whole of gold electrode layer again, but the element welding portion of gold electrode layer or the part that contacts with scolder preferably cover with the barrier layer at least.The method that forms the barrier layer on above-mentioned gold electrode layer is not particularly limited, and for example can adopt sputtering method, ion plating, vapour deposition method, CVD method, galvanoplastic.
Element welding of the present invention is forming on the gold electrode layer under the state on above-mentioned barrier layer with substrate, can supply with scolder and weld in when welding with element, but, preferably only form solder layer at the welding predetermined position of element for element being welded on accurately the position of regulation.By the substrate (the following welding substrate that also abbreviates as) that forms this sample loading mode, critically the loading position of control element can easily carry out automation and be easy to reflow soldering.At this moment, the scolder that the solder layer that forms on the solder layer is used is not particularly limited, because the effect of described solder layer is good especially, itself is softer and can carry out welding under the low temperature, is lower than 20 weight %, particularly is lower than the scolder that the metal of 10 weight % constitutes as main component and gold content so preferably use to contain with Sn or In.If the such scolder of example particularly, but the Au-Sn of the above-mentioned high concentration tin of example is scolder, 100% Sn scolder, Sn-Ag scolder, Sn-Pb scolder, Sn-Bi scolder, Sn-Sb scolder, Sn-In scolder, 100% In scolder, In-Au scolder (wherein gold content is lower than 20 weight %), In-Ag scolder, In-Bi scolder, In-Sb scolder, In-Zn scolder and with scolder of their combination in any etc.
Wherein, from element welding after the highest reason of weld strength of the shared test of tube core, preferably adopting Au-Sn is scolder.In the present invention, in as described above containing with Sn or In is that main component and gold content are lower than in the scolder that the metal of 20 weight % constitutes, the viewpoint of the damage of the welding position that variations in temperature causes when being difficult for causing that element as described above is used in welding, preferably adopt melting point be lower than 280 ℃, particularly below 235 ℃ and Young's modulus be lower than the scolder that the metal of 50GPa (25 ℃ time) constitutes.
The above-mentioned solder layer of welding substrate of the present invention constitutes one deck by the single metal of forming, and satisfies the composition of above-mentioned condition during for each layer melting mixing, and also the lamination of the multilayer that can be made of the metal that difference is formed constitutes.The thickness of this solder layer integral body is that 1～10 μ m is better, more preferably 2～6 μ m.When the thickness of this layer is lower than 1 μ m, because the absolute magnitude of scolder is few, so there is the tendency that can not obtain sufficient weld strength, on the contrary when forming the thickness that surpasses 10 μ m, because amount of solder is too much, so there is the welding back to produce the side of scolder shield element or the unfavorable condition of upper surface (in semiconductor element, being light-emitting area).Be not particularly limited the method for the layer that on above-mentioned barrier layer, forms above-mentioned scolder formation, for example can adopt sputtering method, ion plating, vapour deposition method, CVD method, galvanoplastic.
Be not particularly limited the method for on element of the present invention welds with substrate, welding elements such as semiconductor element, can adopt unqualified known scolder add on method, but according to the reason of carrying out the high welding of precision expeditiously, the element of the present invention that is preferably in as welding substrate welds with carrying the element with electrode on the solder layer of substrate, so that this electrode carries out reflow soldering after contacting described solder layer.Have again, reflow soldering (soft melt welding) has following method: supplying with scolder in advance on both on the regulation pad of substrate or at parts electrode or its, behind the assigned position that parts is fixed on the substrate,, carry out the welding of parts and substrate with solder fusing (flowing).In said method, be not particularly limited the method that makes solder reflow, can adopt the method for using the backflow conveyer belt, the method for using hot plate, opposing steam flow method etc.In addition, can suitably determine heating-up temperature or heating time according to the scolder kind of using, using element welding of the present invention with under the situation of substrate, owing to do not damage the characteristic of the scolder that uses, so for example when the Au-Sn that uses high concentration tin is scolder, can carry out good welding being lower than under 280 ℃ the low temperature.
Have again, just passable as long as the element of welding has an electrode that the metal that can weld by scolder constitutes, be not particularly limited.In general semiconductor element, above-mentioned electrode constitutes with gold mostly.When the element with such gold electrode is welded, the gold atom of having considered gold electrode is diffused in the scolder, but as described later shown in the embodiment, owing to when the element with gold electrode is welded, also can obtain good weld strength, think that the diffusion couple weld strength that causes this moment produces significant impact hardly.But in order to prevent the diffusion of such gold atom better, the most handy group selection at least a metal, the particularly Ag that constitutes from Ag, Cu, Ni and Pb covers the electrode surface of the element that contacts with scolder.
Embodiment
Below, enumerate embodiment and comparative example, illustrate in greater detail the present invention, but the invention is not restricted to these embodiment.
Embodiment 1
Following such element welding substrate of making structure shown in Figure 2.Have again, Fig. 2 is the profile of representational element welding of the present invention with substrate 100, has following structure: on aluminum nitride sintered product substrate 201, be first substrate layer 202 of main component with Ti at lamination successively, be on the gold electrode layer of substrate 200 of second substrate layer 203 of main component and gold electrode layer 204 with platinum, barrier layer 300 that metals such as lamination silver constitute and Sn system or In system and gold content be lower than the solder layer 400 that the metal of 20 weight % constitutes.
At first, on the surface of aluminum nitride sintered product substrate (50.8mm * 50.8mm * 0.3mmt (strain) ト Network ヤ マ system), use sputter equipment, by sputtering method form successively thickness be 0.06 μ m with Ti be first substrate layer, the thickness of main component be 0.2 μ m be that second substrate layer and the thickness of main component is the gold electrode layer of 0.6 μ m with platinum.Then, use the vacuum metallizing device, on above-mentioned gold electrode layer, form the barrier layer of the Ag film formation of thickness 2 μ m, then, as target, plating method in the time of by use Au and Sn, form gold content and be the barrier layer of the thickness 5 μ m that the Au-Sn alloy (217 ℃ of melting points, Young's modulus are 45.0GPa (25 ℃ time)) of 10 weight % constitutes, make element welding substrate of the present invention.Then, on the element of making like this welds with the solder layer of substrate, carry semiconductor element, use the tube core jockey under 250 ℃, to carry out welding in 30 seconds, make the element welding substrate with Au electrode.
Similarly make 10 element welding substrates, when measuring weld strength by the shared analyzer of tube core (IMADA society system), average weld strength is 2.8kgf/mm 2, the glass pattern is in scolder (solder layer is destroyed to be peeled off, and does not have peeling off of each interlayer) all.
Embodiment 2
As target, except passing through to use In (156 ℃ of melting points, Young's modulus is 12.7GPa (25 ℃ time)) the plating method form beyond the barrier layer of thickness 5 μ m, similarly to Example 1, make element welding substrate, except welding temperature is 210 ℃, similarly to Example 1, make the element welding substrate.10 element welding substrates of same making, similarly to Example 1, when measuring weld strength, average weld strength is 2.5kgf/mm 2, separation mode is all in scolder.
Embodiment 3
Except in embodiment 1, the material on barrier layer being changed into the metal shown in the table 1 from Ag, similarly to Example 1, make the element welding with substrate and element welding substrate, similarly to Example 1, measure weld strength.Its result is shown in table 1 simultaneously.
Embodiment 4
Except in embodiment 1, the thickness on barrier layer being changed into the thickness shown in the table 1, similarly to Example 1, make the element welding with substrate and element welding substrate, similarly to Example 1, measure weld strength.Its result is shown in table 1 simultaneously.
Embodiment 5
Except in embodiment 1, the thickness on barrier layer being changed into the thickness shown in the table 1, similarly to Example 1, make the element welding with substrate and element welding substrate, similarly to Example 1, measure weld strength.Its result is shown in table 1 simultaneously.
Comparative example 1
In embodiment 1, the barrier layer is not set, other and embodiment are same, make the element welding with substrate and element welding substrate, measure weld strength.Its result is shown in table 1 simultaneously.As shown in table 1, when the barrier layer not being set, average weld strength is 0.8kgf/mm 2
Comparative example 2
In embodiment 1, the material on barrier layer is changed into Pt from Ag, other make the element welding similarly to Example 1 with substrate and element welding substrate, measure weld strength.Its result is shown in table 1 simultaneously.As shown in table 1, even the barrier layer is set, and during its material metal that not to be the present invention specific, average weld strength only is 1.4kgf/mm 2
Table 1
The scolder kind The thickness of solder layer (μ m) Barrier metal The thickness on barrier layer (μ m) Average weld strength (kgf/mm 2) Separation mode
Embodiment
1 Au10-Sn 5 Ag 2 2.8 In the scolder
Embodiment 2 In100％ 5 Ag 2 2.5 In the scolder
Embodiment 3 Au10-Sn 5 Cu 2 2.4 In the scolder
Au10-Sn 5 Ni 2 2.3 In the scolder
Au10-Sn 5 Pb 2 2.5 In the scolder
Embodiment 4 Au10-Sn 2 Ag 2 2.1 In the scolder
Au10-Sn 3 Ag 2 2.4 In the scolder
Au10-Sn 6 Ag 2 2.7 In the scolder
Au10-Sn 10 Ag 2 3.1 In the scolder
Embodiment 5 Au10-Sn 5 Ag 1 2.6 In the scolder
Au10-Sn 5 Ag 3 2.5 In the scolder
Au10-Sn 5 Ag 5 2.7 In the scolder
Comparative example 1 Au10-Sn 5 Do not have 2 0.8 Semiconductor element-solder layer
Comparative example 2 Au10-Sn 5 Platinum 2 1.4 Barrier metal layer-solder layer
Au10-Sn: golden amount is the Au-Sn alloy of 10 weight %
As described above, the element welding substrate of the application of the invention, formed from the teeth outwards on the gold electrode of substrate of gold electrode, using the Au-Sn of high concentration tin is low, the soft scolder of the such melting point of scolder, can high at low temperatures weld strength ground welding semiconductor element.And, even the temperature difference when the element welding substrate of the present invention of welding uses like this increases, the welding position is not destroyed, the steady in a long-term use.Particularly as substrate, use formed from the teeth outwards gold electrode with the ceramic substrate of aluminium nitride as main component, except such speciality, the high-frequency dielectric loss is also very little, also having the good speciality of heat dissipation characteristics of the heat that produces when heat radiation is used simultaneously, is very good element welding substrate.

Claims (6)

1. an element welds and uses substrate, it is characterized in that having such laminated construction, this laminated construction is, form the metal level that at least a metal that this gold electrode layer superimposed layer of the substrate of gold electrode layer selects constitutes from the teeth outwards from the group that Ag, Cu, Ni and Pb constitute, more thereon directly lamination be that main component and gold content are lower than the solder layer that the metal of 20 weight % constitutes to contain Sn or In.
2. element welding substrate as claimed in claim 1, wherein, the substrate that forms the gold electrode layer on the surface is to be on the ceramic substrate of main component with the aluminium nitride, and lamination is first substrate layer of main component with Ti, is second substrate layer of main component and the metallized substrate of the electrode layer that gold constitutes with Pt successively.
3. substrate is used in element welding as claimed in claim 1, and wherein, the metal layer thickness that at least a metal of selecting from the group that Ag, Cu, Ni and Pb constitute constitutes is 0.2～5 μ m.
4. substrate use in element as claimed in claim 1 welding, wherein, the formation solder layer to contain with Sn or In be that metal that main component and gold content the are lower than 20 weight % Young's modulus when being 25 ℃ is lower than 50GPa, and melting point is lower than 280 ℃ metal.
5. method of making claim 1 or the welding of 2 described elements with substrates, it is characterized in that, combine from the teeth outwards on this gold electrode layer of substrate of gold electrode layer, the metal level that at least a metal that formation is selected from the group that Ag, Cu, Ni and Pb constitute constitutes, directly forming to contain Sn or In more thereon is the solder layer that main component and gold content are lower than the metal formation of 20 weight %.
6. an element welds the manufacture method of using substrate, it is characterized in that, with on the solder layer of substrate, carries the element that has electrode in the described element welding of claim 5, so that this electrode contacts described solder layer, follows and adds reflux solder.
CNB028083644A 2001-06-14 2002-05-29 Substrate for use in joining element Expired - Fee Related CN1316605C (en)

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WO2005036705A1 (en) * 2003-09-22 2005-04-21 Kabushiki Kaisha Toshiba Substrate for optical semiconductor
JP4644007B2 (en) * 2004-03-24 2011-03-02 株式会社トクヤマ Device bonding substrate and manufacturing method thereof
US7626264B2 (en) 2004-03-24 2009-12-01 Tokuyama Corporation Substrate for device bonding and method for manufacturing same
WO2008081758A1 (en) * 2006-12-28 2008-07-10 Tokuyama Corporation Process for producing metallized aluminum nitride substrate
JP2010103206A (en) * 2008-10-22 2010-05-06 Panasonic Corp Semiconductor device and method of manufacturing the same
JP2011223035A (en) * 2011-07-25 2011-11-04 Toshiba Corp Semiconductor device
CN102560371A (en) * 2011-12-31 2012-07-11 广东风华高新科技股份有限公司 Gold-stannum alloy film preparation technology
JP6067982B2 (en) * 2012-03-19 2017-01-25 スタンレー電気株式会社 Manufacturing method of semiconductor device
CN104822486B (en) 2012-11-30 2019-04-19 千住金属工业株式会社 Dissimilar electrode engagement stacking soft solder and the joint method of the dissimilar electrode of electronic component
JP6221690B2 (en) * 2013-11-29 2017-11-01 日立金属株式会社 Base material with brazing material and method for producing base material with brazing material
CN107256829A (en) * 2017-06-01 2017-10-17 合肥邦诺科技有限公司 A kind of method that utilization thin film technique prepares aluminium nitride copper-clad base plate
CN107256830A (en) * 2017-06-01 2017-10-17 合肥邦诺科技有限公司 A kind of method that utilization screen printing technique prepares thick-film type aluminium nitride copper-clad base plate
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