CN111373553B - Light-emitting device, preparation method thereof and display device - Google Patents
Light-emitting device, preparation method thereof and display device Download PDFInfo
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- CN111373553B CN111373553B CN201980003344.9A CN201980003344A CN111373553B CN 111373553 B CN111373553 B CN 111373553B CN 201980003344 A CN201980003344 A CN 201980003344A CN 111373553 B CN111373553 B CN 111373553B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
- G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
- G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
- G09F9/33—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
Abstract
The invention discloses a light-emitting device, a preparation method thereof and a display device, wherein the light-emitting device comprises: an electrode, a solder layer disposed on the electrode, an oxidation resistant layer disposed on the solder layer, a light emitting element disposed on the oxidation resistant layer; the solder layer can be connected with the light-emitting element positioned above the solder layer after being heated and expanded; the anti-oxidation layer is used for protecting the solder layer from oxidation. An oxidation resistant layer is provided on the solder layer, and the solder is not oxidized during heat treatment, so that the solder layer expands and is connected with the light emitting element. That is, the process of applying pressure in the conventional art is omitted, thereby avoiding the problem of damage to the light emitting element due to the application of pressure.
Description
Technical Field
The invention relates to the technical field of light-emitting devices, in particular to a light-emitting device, a preparation method thereof and a display device.
Background
In the prior art, as shown in fig. 1, in a Micro-LED manufacturing process, millions of Micro-LED chips in a micron level are simultaneously transferred to a substrate, so that metal electrodes of the chips 3 are in contact with solder 2 on a metal circuit 1 of a backplane, after precise alignment, heating is performed, and appropriate pressure is applied to connect the metal electrodes of the chips 3 with the metal circuit 1 of the backplane through the solder 2, if the applied pressure is slightly too high, the structure of the chips 3 is damaged, and the damaged chips 3 cannot be lighted.
Accordingly, the prior art is yet to be improved and developed.
Disclosure of Invention
The invention provides a light emitting device, a manufacturing method thereof and a display device, aiming at solving the technical problem of chip structure damage caused by pressure application in the prior art.
The technical scheme adopted by the invention for solving the technical problem is as follows:
a light emitting device, comprising: an electrode, a solder layer disposed on the electrode, an oxidation resistant layer disposed on the solder layer, a light emitting element disposed on the oxidation resistant layer; the solder layer can be connected with the light-emitting element positioned above the solder layer after being heated and expanded; the anti-oxidation layer is used for protecting the solder layer from oxidation.
In the light emitting device, a solder groove is formed in the electrode, the solder layer is located in the solder groove, and the oxidation resistant layer is lower than an opening of the solder groove.
The light emitting device, wherein a UBM layer is disposed on the electrode, and the solder layer is located in the groove of the UBM layer; the anti-oxidation layer is lower than the opening of the groove.
The light emitting device, wherein the solder layer is one or more of an indium solder layer and a tin solder layer.
The light-emitting device is characterized in that the oxidation resistant layer is one or more of a silver layer, a molybdenum layer, a platinum layer, a gold layer, a palladium layer, a ruthenium layer, a rhodium layer and an iridium layer.
The light-emitting device, wherein the thickness of the anti-oxidation layer is 20-200 nm.
A display device comprising a light emitting device as claimed in any one of the preceding claims.
A method for manufacturing a light emitting device, comprising the steps of:
providing an electrode, and dotting a solder layer on the electrode;
plating an anti-oxidation layer on the solder layer;
placing a light emitting element over and in alignment with the solder layer;
and heating the solder layer to expand the solder layer and connect the solder layer with the light-emitting element.
The method for manufacturing a light emitting device, wherein the providing an electrode, and the dotting a solder layer on the electrode comprises:
providing an electrode; wherein, a solder groove is arranged on the electrode;
and dotting a solder layer in the solder groove.
The method for manufacturing a light emitting device, wherein the providing an electrode, and the dotting a solder layer on the electrode comprises:
providing an electrode, and arranging a UBM layer on the electrode;
and dotting a solder layer in the groove of the UBM layer.
Has the advantages that: an oxidation resistant layer is provided on the solder layer, and the solder is not oxidized during heat treatment, so that the solder layer expands and is connected with the light emitting element. That is, the process of applying pressure in the conventional art is omitted, thereby avoiding the problem of damage to the light emitting element due to the application of pressure.
Drawings
FIG. 1 is a schematic diagram of a prior art Micro-LED fabrication process.
Fig. 2 is a flow chart of the production of the light emitting device of the present invention.
FIG. 3 is a schematic diagram of the structure of the electrode, solder layer and oxide layer in the present invention.
FIG. 4 is a schematic structural diagram of an electrode, a solder layer, an oxide layer, and a Micro-LED according to the present invention.
Fig. 5 is a schematic view of the structure of the light-emitting element of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention clearer and clearer, the present invention is further described in detail below with reference to the accompanying drawings and examples. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
Referring to fig. 3-5, the present invention provides some embodiments of a light emitting device.
As shown in fig. 5, a light emitting device of the present invention includes: an electrode 10, a solder layer 20 provided on the electrode 10, an oxidation resistant layer 30 provided on the solder layer 20, a light emitting element provided on the oxidation resistant layer 30; the solder layer 20 can be connected with a light-emitting element above the solder layer 20 after being heated and expanded; the oxidation resistant layer 30 serves to protect the solder layer 20 from oxidation.
The light-emitting device of the invention is prepared by adopting the following steps:
s100, providing an electrode 10, and dotting a solder layer 20 on the electrode 10.
And S200, plating an oxidation resistant layer 30 on the solder layer 20.
S300, placing a light-emitting element above the solder layer 20 and aligning with the solder layer 20.
S400, the solder layer 20 is heated to expand the solder layer 20 and connect the light emitting element.
It should be noted that, by providing the anti-oxidation layer 30 on the solder layer 20, the solder is not oxidized during the heating process (if the anti-oxidation layer 30 is not provided, the solder is oxidized and does not swell, and thus the light emitting element is not connected), and then the solder layer 20 swells and is connected with the light emitting element. That is, the process of applying pressure in the conventional art is omitted, so that the problem of damage to the light emitting element due to the application of pressure is avoided, and the yield is improved.
In a preferred embodiment of the present invention, as shown in fig. 3-4, a solder groove is disposed on the electrode 10, the solder layer 20 is located in the solder groove, and the oxidation-resistant layer 30 is lower than the opening of the solder groove.
Specifically, in order to prevent the problem of spreading of the solder in the horizontal plane when the solder expands in the heat treatment, the solder groove is provided on the electrode 10, the solder layer 20 is provided in the solder groove, and the height of the solder groove is set as needed, so that the problem of solder overflow does not occur, and sufficient solder is connected to the light emitting element.
An Under Bump Metallurgy (UBM) layer 11 is disposed on the electrode 10, and the solder layer 20 is located in the groove 12 of the UBM layer 11; the oxidation resistant layer 30 is lower than the opening of the recess 12. Since the UBM layer 11 is provided with the groove 12, the solder overflow problem can be prevented, and the UBM layer 11 can increase the adhesion of the solder to the electrode 10 and prevent the solder layer 20 from falling off from the electrode 10. If the recess 12 of the UBM layer 11 is not deep enough, the recess 12 may be stepped up to prevent solder overflow.
The shape of the solder groove and recess 12 may be set as desired, for example, in a rectangular, circular, or the like shape. The solder can be arranged according to the shape of the light-emitting element to take the shape of the light-emitting element, so that the light-emitting element can be fully adhered.
The number of solder grooves and recesses 12 can be set as desired, for example, there are several solder grooves or recesses 12 for each light-emitting element, so that the possibility of oxidation of the solder layer 20 can be reduced, and even if the solder layer 20 overflows slightly, the solder layer overflows to a position between two adjacent solder grooves (or recesses 12), thereby increasing the contact area between the solder layer 20 and the light-emitting element. The solder grooves or recesses 12 may be arranged in a matrix arrangement or may be arranged according to the shape of the light emitting element. It is of course also possible, if desired, to reduce the amount of solder used, to use solder grooves or recesses 12 in a particular arrangement, for example in a rectangular arrangement, with the solder grooves or recesses 12 being distributed on each side of the rectangle.
In a preferred embodiment of the present invention, the solder layer 20 is one or more of an indium (In) solder layer and a tin (Sn) solder layer. Specifically, other solders may be used to form the solder layer 20, and of course, the solder layer 20 needs to have better expansion performance during the heating process (the temperature of the heating process is 100-. When a plurality of solders are used in combination, the composition of the solder with a high thermal expansion coefficient can be increased, for example, when an indium tin solder is used, the content of indium can be increased, and the content of tin can be reduced, so that the expansion coefficient of the solder can be increased. The contents of the components are comprehensively considered, and the expansion performance and the adhesion performance are ensured, namely, the expansion is ensured to be high enough to be adhered with the light-emitting element, and the adhesion is ensured to be stable enough, so that the light-emitting element cannot be loosened or fall off.
When a solder of plural compositions is used, the solder layer 20 includes: and the plurality of sub-solder layers are sequentially arranged in the vertical direction. The expansion coefficients of the sub-solder layers increase from top to bottom in sequence. The sub-solder layers are formed by layering the individual solders, for example, in points in the solder bath or recess 12 in sequence. The solder with small expansion coefficient is arranged above the solder layer, so that the adhesion performance between the light-emitting element and the solder layer 20 is prevented from being influenced when the solder is cooled and shrunk. Note that, when the light emitting element and the solder layer 20 are stuck, even if the temperature is lowered, the solder layer 20 is oxidized to some extent without being shrunk to a great extent. However, since the solder in the solder bath and the recess 12 (or the lower layer) is less likely to contact oxygen and to oxidize than the solder that has expanded out (or the upper layer), it shrinks to a greater extent when cooled.
The depth of the solder bath and the recess 12 needs to be determined according to the expansion coefficient of the solder layer 20 and the temperature of the heating process, and the solder layer 20 does not overflow out of the solder bath or the recess 12 due to too high expansion during the heating process. The solder groove and the groove 12 cannot be set too high, which increases the expansion difficulty of the solder layer 20 and prevents the problem that the solder layer 20 cannot be adhered to the light-emitting element.
In a preferred embodiment of the present invention, the oxidation resistant layer 30 is a first or more of a silver layer, a molybdenum layer, a platinum layer, a gold layer, a palladium layer, a ruthenium layer, a rhodium layer, and an iridium layer. Specifically, the anti-oxidation layer 30 is deposited on the solder layer 20 by evaporation (including physical evaporation and chemical evaporation) or sputtering, but other anti-oxidation materials, such as materials that do not react with oxygen in the air during heat treatment, can be used to form the anti-oxidation layer 30. The thickness of the antioxidation layer 30 is 20-200 nm. The thickness of the oxidation resistant layer 30 can be set according to practical situations, and is not limited to the range of 20-200nm, the thickness of the oxidation resistant layer 30 is not too thick, and if the thickness is too thick, the solder in the solder layer 20 cannot break the solder layer 20, and the connection with the light-emitting element cannot be realized; the thickness of the anti-oxidation layer 30 should not be too thin, which cannot play a role of anti-oxidation, and the solder cannot expand after being oxidized, so that the connection with the light-emitting element cannot be realized.
In a preferred embodiment of the present invention, as shown in FIGS. 4-5, the light emitting element is a Micro-LED 40. The Micro-LED 40 comprises: a pad point 41 connected with the oxidation resistant layer 30, and an LED chip 42 connected with the pad point 41.
Specifically, when the solder layer 20 expands, the solder in the solder layer 20 breaks through the antioxidation layer 30, and is thereby soldered to the pad points 41, and connection of the light emitting element to the electrode 10 is achieved.
Based on the light emitting device, the invention further provides a preferred embodiment of a display device:
a display device according to an embodiment of the present invention includes the light-emitting device according to any one of the above embodiments.
Based on the light emitting device, the invention also provides a preferred embodiment of a preparation method of the light emitting device, which comprises the following steps:
as shown in fig. 2, the method for manufacturing a light emitting device according to an embodiment of the present invention includes the following steps:
step S100, providing an electrode 10, and dotting a solder layer 20 on the electrode 10.
Specifically, the solder layer 20 in the present invention is one or more of an indium solder layer and a tin solder layer, which are specifically described above.
Specifically, there are two embodiments of step S100, and in the first embodiment, step S100 includes:
step S110a, providing an electrode 10; wherein, the electrode 10 is provided with a solder groove.
And step S120a, dotting the solder layer 20 in the solder groove.
The solder bath can avoid the problem of solder overflow in the solder layer 20 during heating, as described above.
In the second embodiment, step S100 includes:
step S110b, providing an electrode 10, and disposing a UBM layer on the electrode 10.
It is noted that the UBM layer 11 may be provided on the basis of the solder bath in the first embodiment, further improving the adhesion between the solder layer 20 and the electrode 10.
Step S120b dots solder layer 20 in recess 12 of UBM layer 11.
The recess 12 on the UBM layer 11 and the solder layer 20 dotted in the recess 12 can also prevent the solder in the solder layer 20 from overflowing during heating.
Specifically, the solder groove and the UBM layer 11 are provided to give the shape, the number, and the depth of the solder groove and the recess 12. The solder layer 20 is dotted according to the shape, number and depth of the solder grooves or recesses 12. At the time of dispensing the solder layer 20, the composition and amount of the solder layer 20 are determined. For example, when several sub-solder layers are used for the solder layer 20, the sub-solder layers are formed by sequentially dotting the sub-solders in the solder bath or the recess 12, thereby forming the solder layer 20. When each sub-solder is arranged, the sub-solder with large point expansion coefficient is firstly arranged, and then the sub-solder layer with small point expansion coefficient is arranged.
Step S200, plating an oxidation resistant layer 30 on the solder layer 20.
In the present invention, one or more of a silver layer, a molybdenum layer, a platinum layer, a gold layer, a palladium layer, a ruthenium layer, a rhodium layer, and an iridium layer are used as the oxidation resistant layer 30, and are plated on the solder layer 20 by evaporation (including physical evaporation and chemical evaporation) or sputtering, although other oxidation resistant materials may be used to form the oxidation resistant layer 30.
Step S300, a light emitting element is placed above the solder layer 20 and aligned with the solder layer 20.
Specifically, when the light emitting element is located above the solder layer 20, there may be a gap between the light emitting element and the solder layer 20, for example, the gap between the light emitting element and the solder layer 20 is determined according to the degree to which the solder layer 20 can expand, or the height of the expansion; when one light emitting element corresponds to a plurality of solder grooves or recesses 12, the light emitting element may be directly placed on the solder grooves or recesses 12, the plane between two adjacent solder grooves (or recesses 12) may support the light emitting element, and when the solder layer 20 expands, the solder may overflow onto the plane between two adjacent solder grooves (or recesses 12) to be adhered to the light emitting element. There may be no gap between the light emitting element and the solder layer 20, that is, the light emitting element is in contact with the solder layer 20. Of course, the light emitting element is aligned with the solder layer 20 at this time.
The Micro-LED is adopted as the light emitting element in the invention, and when the Micro-LED with smaller size is adopted, the Micro-LED is transferred above the solder layer 20 in a mass transfer mode.
Step S400 is to heat the solder layer 20 to expand the solder layer 20 and connect the light emitting element.
Specifically, the solder layer 20 is subjected to heat treatment, and heating is performed from the back surface of the electrode 10 (the surface on which the solder layer 20 is not provided), so that the solder layer 20 is expanded to realize connection with the light-emitting element.
Specifically, the temperature of the heating process is determined according to the depth of the groove 12 or solder groove, and the expansion coefficient of the solder layer 20. That is, the solder layer 20 may expand and contact and adhere to the light emitting element. Of course, the solder layer 20 cannot expand excessively, causing the solder to overflow too much and causing a short circuit.
In summary, the light emitting device, the manufacturing method thereof and the display apparatus provided by the present invention include: an electrode, a solder layer disposed on the electrode, an oxidation resistant layer disposed on the solder layer, a light emitting element disposed on the oxidation resistant layer; the solder layer can be connected with the light-emitting element positioned above the solder layer after being heated and expanded; the anti-oxidation layer is used for protecting the solder layer from oxidation. An oxidation resistant layer is provided on the solder layer, and the solder is not oxidized during heat treatment, so that the solder layer expands and is connected with the light emitting element. That is, the process of applying pressure in the conventional art is omitted, thereby avoiding the problem of damage to the light emitting element due to the application of pressure.
It is to be understood that the invention is not limited to the examples described above, but that modifications and variations may be effected thereto by those of ordinary skill in the art in light of the foregoing description, and that all such modifications and variations are intended to be within the scope of the invention as defined by the appended claims.
Claims (4)
1. A light emitting device, comprising: an electrode, a solder layer disposed on the electrode, an oxidation resistant layer disposed on the solder layer, a light emitting element disposed on the oxidation resistant layer; the solder layer can be connected with the light-emitting element positioned above the solder layer after being heated and expanded; the anti-oxidation layer is used for protecting the solder layer from oxidation; the solder layer is positioned in a solder groove or a groove of a UBM layer on the electrode, and the oxidation resisting layer is lower than an opening of the solder groove or the groove; the solder layer includes: the expansion coefficients of the sub-solder layers are sequentially increased from top to bottom; the oxidation resistant layer is one or more of a silver layer, a molybdenum layer, a platinum layer, a gold layer, a palladium layer, a ruthenium layer, a rhodium layer and an iridium layer; the thickness of the anti-oxidation layer is 20-200 nm.
2. The light emitting device of claim 1, wherein the solder layer is one or more of an indium solder layer and a tin solder layer.
3. A display device characterized by comprising the light-emitting device according to any one of claims 1 to 2.
4. A method for manufacturing a light emitting device, comprising the steps of:
providing an electrode, and dotting a solder layer on the electrode;
plating an anti-oxidation layer on the solder layer;
placing a light emitting element over and in alignment with the solder layer;
heating the solder layer to expand the solder layer and connect the solder layer to the light-emitting element;
the providing an electrode, the spot-welding a layer on the electrode comprising:
providing an electrode; wherein, a solder groove or a UBM layer is arranged on the electrode;
dotting a solder layer in the solder bath or the recess of the UBM layer;
the solder layer includes: the expansion coefficients of the sub-solder layers are sequentially increased from top to bottom; the oxidation resistant layer is one or more of a silver layer, a molybdenum layer, a platinum layer, a gold layer, a palladium layer, a ruthenium layer, a rhodium layer and an iridium layer; the thickness of the anti-oxidation layer is 20-200 nm.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/CN2019/129997 WO2021134239A1 (en) | 2019-12-30 | 2019-12-30 | Light emitting device and manufacturing method therefor, and display apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN111373553A CN111373553A (en) | 2020-07-03 |
| CN111373553B true CN111373553B (en) | 2022-01-07 |
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| CN201980003344.9A Active CN111373553B (en) | 2019-12-30 | 2019-12-30 | Light-emitting device, preparation method thereof and display device |
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| CN (1) | CN111373553B (en) |
| WO (1) | WO2021134239A1 (en) |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5880530A (en) * | 1996-03-29 | 1999-03-09 | Intel Corporation | Multiregion solder interconnection structure |
| DE19632378B4 (en) * | 1996-08-10 | 2007-01-25 | Robert Bosch Gmbh | Diffusion soldered joint and method of making diffusion solder joints |
| US6492197B1 (en) * | 2000-05-23 | 2002-12-10 | Unitive Electronics Inc. | Trilayer/bilayer solder bumps and fabrication methods therefor |
| JP2002373960A (en) * | 2001-06-14 | 2002-12-26 | Tokuyama Corp | Element bonding substrate and its forming method |
| JP4617902B2 (en) * | 2005-01-31 | 2011-01-26 | 信越半導体株式会社 | Light emitting device and method for manufacturing light emitting device |
| US20070037004A1 (en) * | 2005-08-12 | 2007-02-15 | Antaya Technologies Corporation | Multilayer solder article |
| CN101916810B (en) * | 2010-08-06 | 2013-07-03 | 湖北匡通电子股份有限公司 | SMD type LED encapsulation method |
| KR20140130618A (en) * | 2013-05-01 | 2014-11-11 | 서울바이오시스 주식회사 | Led module with a light emitting diode attached via solder paste and light emitting diode |
| US20150279793A1 (en) * | 2014-03-27 | 2015-10-01 | Taiwan Semiconductor Manufacturing Company Ltd. | Semiconductor structure and manufacturing method thereof |
| US9793231B2 (en) * | 2015-06-30 | 2017-10-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Under bump metallurgy (UBM) and methods of forming same |
| US9847310B2 (en) * | 2015-07-18 | 2017-12-19 | Semiconductor Components Industries, Llc | Flip chip bonding alloys |
| CN109599461B (en) * | 2018-10-29 | 2020-03-27 | 武汉华星光电技术有限公司 | LED die bonding method and spraying device |
| CN110112126A (en) * | 2019-05-16 | 2019-08-09 | 深圳市兆驰节能照明股份有限公司 | Display device and display module and its manufacturing method |
-
2019
- 2019-12-30 CN CN201980003344.9A patent/CN111373553B/en active Active
- 2019-12-30 WO PCT/CN2019/129997 patent/WO2021134239A1/en active Application Filing
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| Publication number | Publication date |
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| WO2021134239A1 (en) | 2021-07-08 |
| CN111373553A (en) | 2020-07-03 |
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