CN1313360A - Epoxy resin composition and semiconductor device - Google Patents
Epoxy resin composition and semiconductor device Download PDFInfo
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- CN1313360A CN1313360A CN 01111645 CN01111645A CN1313360A CN 1313360 A CN1313360 A CN 1313360A CN 01111645 CN01111645 CN 01111645 CN 01111645 A CN01111645 A CN 01111645A CN 1313360 A CN1313360 A CN 1313360A
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Abstract
The present invention provided an epoxy resin composition generating little carbon dioxide gas and hardly generating a sink mark even when cured at a high temperature and to provide a semiconductor device obtained by sealing a semiconductor element using the epoxy resin composition. The epoxy resin composition is caused to comprise an epoxy resin and an acid anhydride-based curing agent to generate carbon dioxide gas of not more than 500 mu g/g when thermally cured. Further, her epoxy resin composition is caused to comprise an epoxy resin, an acid anhydride-based curing agent and an organic acid salt of diazabicycloalkenes, the amount of the organic acid salt of diazabicycloalkenes being 0.5-8 pts.wt. based on 100 pts.wt. of the acid anhydride-based curing agent. The semiconductor device is obtained by sealing a semiconductor element using the epoxy resin composition.
Description
The present invention relates to an epoxy resin composition and a semiconductor device, and more particularly to an epoxy resin composition suitable for sealing a semiconductor element such as an IC or LSI and an optical semiconductor element such as an LED or CCD, and a semiconductor device obtained by sealing a semiconductor element using such an epoxy resin composition.
Currently, many semiconductor devices (including optical semiconductor devices) are manufactured by sealing semiconductor elements (including optical semiconductor devices) with an epoxy resin composition. The semiconductor element is sealed with the epoxy resin composition by injecting the epoxy resin composition into a mold having the semiconductor element disposed at a predetermined position and curing the epoxy resin composition. In the epoxy resin composition used for the sealing, an acid anhydride-based curing agent is generally used as a curing agent for an epoxy resin, and it is known that the curing agent is very effective for sealing an optical semiconductor element which requires transparent sealing, such as an LED or a CCD.
However, in the manufacture of the semiconductor device, rapid curing of the epoxy resin is desired for improving the production efficiency. For the fast hardening epoxy resin, it is conceivable that hardening is performed at a high temperature, but if hardening is performed at a temperature of, for example, about 130 ℃ or more, the acid anhydride-based hardening agent is decomposed to generate carbon dioxide gas, and the generated carbon dioxide gas bubbles cause not only defects in the hardened resin but also carbon dioxide gas bubbles at the interface of the mold and the resin and deep spots (sink mark) on the surface of the hardened resin.
The present invention has been made in view of the above circumstances, and an object thereof is to provide an epoxy resin composition which rarely generates carbon dioxide gas and hardly generates deep spots even when cured at a high temperature, and a semiconductor device obtained by sealing a semiconductor element with the epoxy resin composition.
In orderto achieve the above object, the epoxy resin composition of the present invention comprises an epoxy resin and an acid anhydride-based curing agent, and is characterized in that the amount of carbon dioxide gas generated during thermal curing is 500. mu.g or less.
The present invention also includes an epoxy resin composition comprising an epoxy resin and an acid anhydride-based curing agent, wherein the amount of carbon dioxide gas generated when heated at 135 ℃ for 20 minutes is 500 [ mu]g/g or less. The lower limit of the amount of carbon dioxide gas generated is preferably 50. mu.g/g or less, more preferably 10. mu.g/g or less, and particularly preferably 0. mu.g/g.
These epoxy resin compositions preferably contain a diazabicycloalkene organic acid salt in an amount of 0.5 to 8 parts by weight based on 100 parts by weight of the acid anhydride curing agent. These epoxy resin compositions preferably further contain a metal organic acid salt.
The present invention also includes an epoxy resin composition comprising an epoxy resin, an acid anhydride-based curing agent, and an organic acid salt of diazabicycloalkene, wherein the amount of the organic acid salt of diazabicycloalkene is 0.5 to 8 parts by weight relative to 100 parts by weight of the acid anhydride-based curing agent. The epoxy resin composition preferably further contains a metal organic acid salt.
The present invention also includes a semiconductor device obtained by sealing a semiconductor element with the above epoxy resin composition.
The epoxy resin composition of the present invention contains an epoxy resin and an acid anhydride-based curing agent.
Examples of the epoxy resin include a nitrogen-containing epoxy resin such as a bisphenol a type epoxy resin, a bisphenol F type epoxy resin, a resol type epoxy resin, a cresol resol type epoxy resin, an alicyclic epoxy resin, triglycidyl isocyanurate, and a caproyl urea epoxy resin, a hydrogenated bisphenol a type epoxy resin, an aliphatic type epoxy resin, a glycidyl ether type epoxy resin, a bisphenol S type epoxy resin, a biphenyl type epoxy resin mainly having a low water absorption rate cured body type, a bicyclic type epoxy resin, and a naphthalene type epoxy resin. They may be used alone or in combination. Among these epoxy resins, for example, bisphenol a type epoxy resins, bisphenol F type epoxy resins, alicyclic epoxy resins, and triglycidyl isocyanurate, which are excellent in transparency and discoloration resistance, are preferably used for sealing an optical semiconductor element.
The epoxy resin may be solid or liquid at normal temperature. However, an epoxy resin having an epoxy equivalent of 90 to 1000 is generally preferred, and in the case of a solid, an epoxy resin having a softening point of 160 ℃ or less is preferred. When the epoxy equivalent is less than 90, the hardened product of the epoxy resin composition may become brittle. When the epoxy equivalent exceeds 1000, the glass transition temperature (Tg) of the cured product is lowered.
Examples of the acid anhydride-based curing agent include anhydrous phthalic acid, anhydrous maleic acid, anhydrous trimellitic acid, anhydrous pyromellitic acid, hexahydro-anhydrous phthalic acid, tetrahydro-anhydrous phthalic acid, anhydrous methylnasalic acid, anhydrous nasalic acid, anhydrous glutaric acid, methylhexahydro-anhydrous phthalic acid, and methyltetrahydro-anhydrous phthalic acid. They may be used alone or in combination. Among these acid anhydride-based curing agents, anhydrous phthalic acid, hexahydroanhydrous phthalic acid, tetrahydroanhydrous phthalic acid, and methylhexahydrophthalic acid are preferably used.
The acid anhydride-based curing agent preferably has a molecular weight of about 140 to 200, and is preferably a colorless or pale yellow acid anhydride.
In addition to the acid anhydride-based curing agent, a conventionally known curing agent for an epoxy resin, for example, an amine-based curing agent, a phenol-based curing agent, a product obtained by partially esterifying the acid anhydride-based curing agent with an alcohol, or a carboxylic acid curing agent such as hexahydrophthalic acid, tetrahydrophthalic acid, and methylhexahydrophthalic acid, may be used in combination. In this case, these hardeners may be used alone or in combination. For example, when a carboxylic acid hardener is used in combination, the hardening speed can be increased, and the production efficiency can be improved.
The mixing ratio of the epoxy resin and the acid anhydride-based curing agent is preferably 0.5 to 1.5 equivalents, and more preferably 0.7 to 1.2 equivalents of acid anhydride groups in the acid anhydride-based curing agent with respect to 1 equivalent of epoxy groups in the epoxy resin. When the amount of the acid anhydride group is less than 0.5 equivalent, the curing rate of the epoxy resin composition tends to be increased, and the glass transition temperature of the cured product tends to be lowered, while when it exceeds 1.5 equivalents, the moisture resistance tends to be lowered.
When a curing agent other than the above-mentioned acid anhydride curing agents is used in combination, the mixing ratio thereof may be determined by the mixing ratio (equivalent ratio) when the acid anhydride curing agent is used. That is, even when a curing agent other than the acid anhydride curing agent is used in combination, the ratio is preferably 0.5 to 1.5 equivalents, and more preferably 0.7 to 1.2 equivalents, of a functional group (e.g., amino group, phenol group, etc.) of the curing agent with respect to 1 equivalent of epoxy group in the epoxy resin.
In the epoxy resin composition of the present invention, a hardening accelerator is preferably blended. As the hardening accelerator, conventionally known hardening accelerators can be used, but in order to reduce the generation of carbon dioxide gas and prevent deep spots at the time of heat hardening in the epoxy resin composition, it is preferable to use organic acid salts of diazabicycloalkenes such as 1, 8-diazabicyclo (5,4,0) undecene-7 (hereinafter referred to as "DBU") and 1, 5-diazabicyclo (4,3,0) -nonene-5 (hereinafter referred to as "DBN"). More specifically, organic acid salts of diazabicycloalkenes and organic acids such as n-phthalic acid, carbolic acid and octanoic acid are preferably used.
The proportion of the organic acid salt containing diazabicycloalkene is preferably 0.5 to 8 parts by weight, more preferably 1 to 4.5 parts by weight, and particularly preferably 2 to 4.2 parts by weight, based on 100 parts by weight of the acid anhydride-based curing agent of the present invention. When the content of the organic acid salt of diazabicycloalkene is less than 0.5 parts by weight, the rapid curing properties may be reduced, and when it exceeds 8 parts by weight, the amount of carbon dioxide gas generated may be increased, resulting in the formation of deep spots.
The use of a metal organic acid salt in combination with the above-mentioned organic acid salt of diazabicycloalkene is preferable for preventing deep spotting. Examples of the organic acid metal salts include tin octylate, zinc octylate, tin naphthenate, and zinc naphthenate.
The proportion of the organic acid salt is 1 to 6 parts by weight, preferably 2 to 5 parts by weight, based on 100 parts by weight of the acid anhydride curing agent of the present invention. When the content ratio of the metal organic acid salt is less than 1 part by weight, the effect of the metal organic acid salt in combination with the above diazabicycloalkene-based organic acid salt is insufficient, and when it exceeds 6 parts by weight, the rapid hardening property is lowered.
As the hardening accelerator, an accelerator other than the above-mentioned diazabicycloalkene organic acid salt may be used, and examples of the hardening accelerator include tertiary amines such as DBU, DBN and triethylenediamine, imidazoles such as 2-ethyl-4-methylimidazole and 2-methylimidazole, phosphorus compounds such as triphenylphosphine, tetraphenylphosphonium, tetraphenylboronic acid ester and tetra-n-butylphosphonium-o, o-diethylphosphorodiamidate, quaternary ammonium salts and derivatives thereof. They may be used alone or in combination.
In the epoxy resin composition of the present invention, in addition to the epoxy resin, the curing agent such as the acid anhydride-based curing agent, and the curing accelerator, various known additives conventionally used, for example, a deterioration preventing agent, a denaturant, a filler, a silane coupling agent, an antifoaming agent, a leveling agent, a mold release agent, a dye, a pigment, and the like may be appropriately blended as necessary.
Examples of the deterioration inhibitor include conventionally known deterioration inhibitors such as phenol compounds, amine compounds, organic sulfur compounds, and phosphorus compounds. Examples of the denaturant include conventionally known denaturants such as glycols, silicones, and alcohols. Examples of the filler include conventionally known fillers such as silica particles and alumina particles. Examples of the silane coupling agent include conventionally known silane coupling agents such as silicone-based silane coupling agents and titanate-based silane coupling agents. Examples of the defoaming agent include conventionally known defoaming agents such as silicone-based defoaming agents.
The epoxy resin composition of the present invention can be prepared, for example, in the form of a liquid, a powder or a tablet in which a powder is prepared into a tablet by the following method. That is, the above-mentioned components can be appropriately blended in order to obtain a liquid epoxy resin composition, for example. For the preparation of a composition in the form of powder or a tablet prepared by making powder into an ingot, for example, the above components are appropriately blended and mixed in advance, and then mixed by a mixer to melt-mix the mixture, and then cooled to room temperature, and thereafter pulverized by a known method, and if necessary, an ingot can be prepared.
The epoxy resin composition of the present invention prepared as described above has a carbon dioxide gas generation amount at the time of thermosetting of 500. mu.g/g or less, preferably 300. mu.g/g or less, more preferably 200. mu.g/g or less, more specifically 500. mu.g/g or less, preferably 300. mu.g/g or less, more preferably 200. mu.g/g or less, when heated at 135 ℃ for 20 minutes. "μ g/g" is the amount of carbon dioxide gas generated per 1g of the epoxy resin composition (μ g).
The amount of carbon dioxide gas generated can be measured, for example, by using a northern gas detector. The northern type gas detecting tube is filled with an acid-base indicator ( ) Gas detecting tube ofAnd (4) sucking sample gas by a vacuum method, and detecting the amount of the carbon dioxide gas by observing the discoloration range of the acid-base indicator. The amount of carbon dioxide gas produced is measured, and more specifically, for example, in a closed container (having a volume of 200ml),at 12mm X40 mm (4.8 cm)2) The amount of carbon dioxide gas generated can be measured by spreading 1g of the epoxy resin composition on a flat surface of (2), heating the epoxy resin composition at 135 ℃ for 20 minutes, then absorbing the air in the sealed container with carbon dioxide gas by means of a northern gas detection tube, and quantitatively measuring the carbon dioxide gas contained in the air. When the amount of carbon dioxide gas generated during the thermal curing of the epoxy resin composition is 500. mu.g/g or less, a cured product having a good shape without deep spots can be obtained even when cured at a high temperature.
The epoxy resin composition of the present invention is suitable for sealing a semiconductor device. The sealing of the semiconductor element with the epoxy resin composition of the present invention is not particularly limited, and may be carried out by a known molding method such as ordinary transfer molding or casting. In the case where the epoxy resin composition of the present invention is a liquid, at least one of the two-liquid type, in which the epoxy resin and the curing agent are stored separately and mixed just before use, can be used. When the epoxy resin composition of the present invention is in the form of powder or tablet, the components may be melted by heating at the time of use as the step B in melt-mixing them.
The sealed semiconductor element is not particularly limited, and examples thereof include semiconductor elements such as IC and LSI, and optical semiconductor elements such as LED and CCD. The obtained semiconductor device may be transparent or opaque, and the epoxy resin composition of the present invention uses an acid anhydride-based curing agent as a curing agent, and is excellent in transparency, and therefore is particularly suitable for optical semiconductor elements requiring a transparent cured body. The term "transparent" also includes colored transparency, and means that the light transmittance at a wavelength of 600nm is 50 to 100%, preferably 80 to 100%, as measured by a spectrophotometer when the thickness is 1 mm.
When a semiconductor element is sealed with the epoxy resin composition of the present invention, for example, carbon dioxide gas is generated little even if the semiconductor element is cured at a high temperature of 130 to 140 ℃ and further 140 to 160 ℃, and therefore, a semiconductor device having few defects, few deep spots on the surface, and a good shape can be manufactured with good yield.
Examples
The present invention will be further described with reference to the following examples and comparative examples, but the present invention is not limited to these examples and comparative examples.
1) Preparation of epoxy resin composition
The epoxy resin compositions of examples 1 to 12 and comparative examples 1 to 3 were prepared by mixing the curing accelerators and the metal organic acid salts shown in Table 1 in the proportions shown in Table 1 in the epoxy resin compositions having the following compositions.
| Composition of epoxy resin composition | Parts by weight |
| Bisphenol A type epoxy resin (epoxy equivalent 185) | 100 |
| Acid anhydride curing agent (4-methylhexahydrophthalic acid anhydride/hexahydro acid anhydride) Hydrogen anhydrous phthalic acid (weight ratio 7/3) | 100 |
| Silicone defoaming agent | 0.0175 |
| Deterioration preventing agent | 1.3 |
2) Amount of carbon dioxide gas generated
The lg of the epoxy resin compositions of examples 1 to 12 and comparative examples 1 to 3 was set to 12mm × 40mm (4.8 cm)2) The test pieces were developed on a flat surface, and after heating at 135 ℃ for 20 minutes in a 200ml closed vessel, the air in the closed vessel was absorbed by a northern gas detection tube using carbon dioxide gas, and quantitative analysis was performed to determine the carbon dioxide gas contained in the air, and the results are shown in Table 1.
3) Evaluation of
The epoxy resin compositions of examples 1 to 12 and comparative examples 1 to 3 were evaluated for the occurrence of deep mottle and rapid curability. The results are shown in Table 1.
Incidence of deep spots: the epoxy resin compositions of examples 1 to 12 and comparative examples 1 to 3 were cured at 150 ℃ and 140 ℃ for 15 minutes and 20 minutes, respectively, using a mold for a lamp body (ランブケ - ス) having a diameter of 5mm, and 60 cured bodies were obtained from each of the epoxy resin compositions. The presence or absence of the occurrence of deep spots in the obtained cured product was visually confirmed, and the rate (%) of occurrence of deep spots was determined by dividing the number of cured products having deep spots by the number of cured products as a whole (60 cured products).
Rapid hardening: the epoxy resin compositions of examples 1 to 12 and comparative examples 1 to 3 were cured at 150 ℃ and 140 ℃ for 15 minutes and 20 minutes, respectively, using a mold for a lamp body having a diameter of 5mm, thereby obtaining cured bodies. The glass transition temperature (Tg (. degree. C.)) of the cured product obtained was measured by DSC (manufactured by パ - キンエルマ K., temperature rate: 10 ℃ C./min), and the Tg was used as an index of rapid curing.
TABLE 1
| Examples comparative examples | Example 1 | Example 2 | Example 3 | Example 4 | Example 5 | Example 6 | Example 7 | Example 8 | Comparative example 1 | Comparative example 2 | Comparative example 3 | |
| Hardening accelerator | DBU phthalate | 11 | 2.1 | 2.5 | 4.2 | 5.1 | 7.5 | - | - | 8.5 | - | - |
| DBU caprylate | - | - | - | - | - | - | 2.9 | - | - | - | - | |
| DBU phenolate | - | - | - | - | - | - | - | 2.4 | - | - | - | |
| 2-ethyl-4-methylimidazole | - | - | - | - | - | - | - | - | - | 1.5 | 1 | |
| Amount of carbon dioxide gas generated (μ g/g) | 168 | 181 | 263 | 294 | 372 | 478 | 280 | 261 | 552 | 823 | 751 | |
| Hardening at 150 ℃ | Incidence of deep spots (%) | 0 | 0 | 5 | 10 | 40 | 50 | 5 | 5 | 50 | 100 | 60 |
| Quick hardening, Tg (. degree. C.) | 111 | 123 | 142 | 141 | 142 | 142 | 142 | 140 | 142 | 142 | 114 | |
| Hardening at 140 ℃ | Incidence of deep spots (%) | 0 | 0 | 0 | 0 | 0 | 0 | 0 | 0 | 20 | 40 | 30 |
| Quick hardening, Tg (. degree. C.) | 110 | 120 | 137 | 135 | 137 | 136 | 135 | 134 | 142 | 142 | 108 | |
| Examples | Example 9 | Example 10 | Example 11 | Example 12 | Example 13 | Example 14 | |
| Hardening accelerator | DBU phthalate | 25 | 25 | 2.5 | 2.5 | 2.5 | 2.5 |
| Tin octylate | 1 | 2 | 4 | 5 | 6 | - | |
| Zinc octoate | - | - | - | - | - | 4 | |
| Amount of carbon dioxide gas generated (μ g/g) | 200 | 121 | 90 | 81 | 81 | 118 | |
| Hardening at 150 ℃ | Incidence of deep spots (%) | 5 | 0 | 0 | 0 | 0 | 0 |
| Quick hardening, Tg (. degree. C.) | 135 | 135 | 133 | 132 | 110 | 135 | |
| Hardening at 140 ℃ | Incidence of deep spots (%) | 0 | 0 | 0 | 0 | 0 | 0 |
| Quick hardening, Tg (. degree. C.) | 133 | 134 | 132 | 131 | 106 | 134 | |
As shown in the upper half of Table 1, the epoxy resin composition of example 6 having an amount of carbon dioxide gas generated of 478. mu.g/g exhibited a deep spot generation rate of 0% when cured at 140 ℃ in contrast to the epoxy resin composition of comparative example 1 having an amount of carbon dioxide gas generated of 552. mu.g/g exhibited a deep spot generation rate of 20% when cured at 140 ℃. From this, it was found that the incidence of deep spots was changed in the range of 500. mu.g/g of carbon dioxide gas generation.
As shown in the upper half of Table 1, the epoxy resin composition of example 4 having a carbon dioxide gas generation amount of 294. mu.g/g exhibited a deep spot generation rate of 10% when cured at 150 ℃ whereas the epoxy resin composition of example 5 having a carbon dioxide gas generation amount of 372. mu.g/g exhibited a deep spot generation rate of 40% when cured at 150 ℃. From this, it is found that the rate of occurrence of deep spots changes in the range of 300. mu.g/g of carbon dioxide gas generation, and that the amount of carbon dioxide gas generation is more preferably 300. mu.g/g or less.
Unlike example 1 in which the mixing ratio of the curing accelerator was 1.1 parts by weight, which had a Tg of 110 ℃, example 4 in which the mixing ratio of the curing accelerator was 4.2 parts by weight, which had a Tg of 141 ℃, it is clear that the rapid hardening property was slightly lowered when the mixing ratio of the curing accelerator was small, as compared with when the mixing ratio was large.
As can be seen from the lower half of table 1, when the hardening accelerator and the metal organic acid salt are compounded, the amount of carbon dioxide gas generated can be further reduced.
As described above, when a semiconductor element is sealed with the epoxy resin composition of the present invention, carbon dioxide gas is less generated even when the semiconductor element is cured at a high temperature, and therefore, a semiconductor device having a good shape with few defects and few surface deep spots can be manufactured with high productivity.
Claims (12)
1. An epoxy resin composition comprising an epoxy resin and an acid anhydride-based curing agent, wherein the amount of carbon dioxide gas generated during thermal curing is 500 [ mu]g/g or less.
2. An epoxy resin composition comprising an epoxy resin and an acid anhydride-based curing agent, wherein the amount of carbon dioxide gas generated when the composition is heated at 135 ℃ for 20 minutes is 500 [ mu]g/g or less.
3. The epoxy resin composition according to claim 1 or 2, which further comprises an organic acid salt of diazabicycloalkene.
4. The epoxy resin composition according to claim 3, which comprises 0.5 to 8 parts by weight of an organic acid salt of diazabicycloalkene based on 100 parts by weight of the acid anhydride based curing agent,
5. the epoxy resin composition as claimed in claim 3, further comprising a metal organic acid salt.
6. The epoxy resin composition as claimed in claim 4, further comprising a metal organic acid salt.
7. The epoxy resin composition according to claim 5, wherein the curing agent contains 1 to 6 parts by weight of a metal organic acid salt per 100 parts by weight of the acid anhydride curing agent.
8. The epoxy resin composition according to claim 6, wherein the curing agent contains 1 to 6 parts by weight of a metal organic acid salt per 100 parts by weight of the acid anhydride curing agent.
9. An epoxy resin composition comprising an epoxy resin, an acid anhydride curing agent and an organic acid salt of diazabicycloalkene, wherein the amount of the organic acid salt of diazabicycloalkene is 0.5 to 8 parts by weight based on 100 parts by weight of the acid anhydride curing agent.
10. The epoxy resin composition as claimed in claim 9, further comprising a metal organic acid salt.
11. The epoxy resin composition according to claim 10, wherein the curing agent contains 1 to 6 parts by weight of a metal organic acid salt per 100 parts by weight of the acid anhydride curingagent.
12. A semiconductor device obtained by sealing a semiconductor element with the epoxy resin composition according to claim 1 or 9.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28259/2000 | 2000-02-04 | ||
| JP2000028259A JP3394736B2 (en) | 2000-02-04 | 2000-02-04 | Epoxy resin composition and semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1313360A true CN1313360A (en) | 2001-09-19 |
| CN1216100C CN1216100C (en) | 2005-08-24 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 01111645 Expired - Fee Related CN1216100C (en) | 2000-02-04 | 2001-02-03 | Epoxy resin composition and semiconductor device |
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| Country | Link |
|---|---|
| JP (1) | JP3394736B2 (en) |
| CN (1) | CN1216100C (en) |
| TW (1) | TWI286146B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109294497A (en) * | 2018-09-12 | 2019-02-01 | 无锡创达新材料股份有限公司 | A kind of LED epoxy encapsulant with matte surface characteristic |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005120228A (en) * | 2003-10-16 | 2005-05-12 | Nitto Denko Corp | Epoxy resin composition for optical semiconductor element sealing and optical semiconductor device using the composition |
| WO2005092980A1 (en) * | 2004-03-25 | 2005-10-06 | Matsushita Electric Works Ltd. | Epoxy resin composition for sealing photosemiconductor element and photosemiconductor device |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5830893B2 (en) * | 1978-03-27 | 1983-07-02 | 住友ベークライト株式会社 | Colorless transparent epoxy resin composition |
| JPS59129224A (en) * | 1983-01-17 | 1984-07-25 | Hitachi Ltd | Resin composition |
| JPS61194756A (en) * | 1985-02-23 | 1986-08-29 | Toshiba Chem Corp | Resin seal type semiconductor device |
| JPH0822904B2 (en) * | 1987-06-04 | 1996-03-06 | 新日本理化株式会社 | Epoxy resin curing agent composition |
| JPH0721044B2 (en) * | 1987-11-11 | 1995-03-08 | 株式会社東芝 | Epoxy curing agent |
| JP3153046B2 (en) * | 1993-05-31 | 2001-04-03 | 日東電工株式会社 | Transparent resin substrate for liquid crystal display element |
| JPH0725988A (en) * | 1993-07-13 | 1995-01-27 | Tonen Corp | Epoxy resin hardener |
| JP3623530B2 (en) * | 1994-04-18 | 2005-02-23 | 日東電工株式会社 | Optical semiconductor device |
| JPH07316263A (en) * | 1994-05-23 | 1995-12-05 | New Japan Chem Co Ltd | Epoxy resin composition |
-
2000
- 2000-02-04 JP JP2000028259A patent/JP3394736B2/en not_active Expired - Fee Related
-
2001
- 2001-02-02 TW TW90102161A patent/TWI286146B/en not_active IP Right Cessation
- 2001-02-03 CN CN 01111645 patent/CN1216100C/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109294497A (en) * | 2018-09-12 | 2019-02-01 | 无锡创达新材料股份有限公司 | A kind of LED epoxy encapsulant with matte surface characteristic |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI286146B (en) | 2007-09-01 |
| JP3394736B2 (en) | 2003-04-07 |
| JP2001213940A (en) | 2001-08-07 |
| CN1216100C (en) | 2005-08-24 |
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