CN1277682A - 应用羧酸羟铵除去耐蚀膜和蚀刻残余物的组合物和方法 - Google Patents
应用羧酸羟铵除去耐蚀膜和蚀刻残余物的组合物和方法 Download PDFInfo
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Abstract
一种用弱羧酸部分地中和的羟胺与有机溶剂(例如烷基亚砜、吡咯烷酮或砜)的混合物,该混合物从基片除去固化的光刻胶和聚合光刻胶残余物,减小了金属腐蚀。
Description
本发明涉及从基片(例如硅片)除去光刻胶和光刻胶残余物的组合物和方法。包括羟胺和弱有机酸的混合物被用于剧烈地溶脱以除去光刻胶材料,例如已经历了等离子体蚀刻和等离子体后灰化的光刻胶残余物。所述组合物和方法达到了改善的溶脱速度同时大为减小了金属腐蚀。
光刻胶材料常用作集成电路的制作中的覆盖掩膜。在制作过程中,应用本领域已知的各种技术将光刻胶材料涂在基片上。然后将现用光刻胶材料涂覆了的基片辐照曝光,通常是在UV、电子束或X射线波长中辐照的。曝光后,将涂覆的基片显影,在基片上留下光刻胶材料的清晰的图形。显影后基片上留下的光刻胶材料被用于掩盖基片供进一步处理。在进一步处理后,用光刻胶溶脱剂溶脱基片的光刻胶材料。显影后进一步处理光刻胶材料,例如高温曝光后烘烤、离子注入和深UV辐照固化,导致形成特别耐溶解的高度交联光刻胶聚合物材料。
对于等离子体蚀刻或反应性离子蚀刻金属层、氧化物层和多晶硅层的需要已增加了。通过等离子体蚀刻,由于金属基片与耐蚀膜聚合物和卤化等离子气体分子的复杂反应使涂盖的光刻胶留下大致固化了的有机金属侧壁聚合物。因此,已增大了对于等离子体后聚合物去除剂和光刻胶溶脱剂(它们有效地作用但不损坏微型电路的所需特征)的需要。
对于等离子体蚀刻或反应性离子蚀刻金属层、氧化物层和多晶硅层的需要已增加了。通过等离子体蚀刻,由于金属基片与耐蚀膜聚合物和卤化等离子气体分子的复杂反应使涂盖的光刻胶留下大致固化了的有机金属侧壁聚合物。因此,已增大了对于等离子体后聚合物去除剂和光刻胶溶脱剂(它们有效地作用但不损坏微型电路的所需特征)的需要。由于半导体的制造已进入了亚微型几何结构,所以对于光刻胶去除剂和聚合物去除剂(它们有效地作用但不损坏电路的所需特征)的需要增加了。自从大约1990年以来,采用了羟胺与链烷醇胺的混合物以促进除去固化的光刻胶聚合物残余物和溶脱。参见美国专利Nos.5,279,771;5,334,332;5,381,807;5,419,779和5,482,566。上面提到的碱性溶脱剂在从基片除去固化的光刻胶方面可能有效,但是,在从亚微型几何结构除去等离子体后蚀刻交联的有机金属聚合物残余物时会引起不良的副作用。已证实这些碱性溶脱剂和聚合物去除剂在微型电路基片(该基片含金属膜,尤其是铝或者活泼金属例如铝或钛与正电性更大的金属例如铜或钨的各种组合体或合金)上的应用成问题,即使不进行等离子体处理也成问题,因为存在金属腐蚀。已这样着手处理了该问题,即通过应用非碱性有机溶剂(例如异丙醇、其它的醇或二元醇)进行中间清洗,但这样的清洗增大了成本和生产过程的复杂性。此外,羟胺/链烷醇胺在含水介质中的混合物经历热分解,生成不稳定的产物。
Schwartzkopf在美国专利5,308,745中论述了光刻胶溶脱剂组合物的金属腐蚀,其中该组合物含溶脱溶剂(例如n-甲基吡咯烷酮),碱性胺(例如氨基醇),以及弱酸。但是,这些组合物对于聚合物的除去不是有效的。
现在,倾向于在金属层中应用100%的铜。因为铜比以前应用的金属更易受腐蚀,所以对非腐蚀性聚合物和光刻胶去除剂的需求增大了。
本发明的一个目的是提供一种光刻胶溶脱剂,它是环境相容的,稳定的,并且不需要中间清洗来避免金属腐蚀,而且它仍有效地溶脱等离子体处理过的或固化后的光刻胶和聚合物残余物。
本发明的另一个目的是提供一种除去光刻胶和聚合物的方法,该方法可避免氧灰化。
本发明的进一步目的是提供这种改良的不腐蚀金属的溶脱剂组合物,该组合物对于光刻胶对交联的或固化的光刻胶的溶脱速度无任何过度的不利影响。
本发明的又一个目的是提供一种光刻胶溶脱剂和等离子体后聚合物去除剂,它是稳定的,具有持久的浸渍寿命(bath life),没有环境温度的变化对溶脱组合物的稳定性和效率的任何不利的影响。
本发明的又一个目的是提供一种普遍被接受的光刻胶溶脱剂和等离子体后聚合物去除剂,它不含任何毒性添加剂(例如儿茶酚),有效地适用于不依赖干蚀刻设备或用于操作中的等离子气体类型的所有等离子体后蚀刻操作,并且不腐蚀敏感性金属层。
简言之,本发明优选的实施方案应用了用弱羧酸部分中和的羟胺与可生物降解的有机溶剂(例如烷基亚砜、吡咯烷酮或砜)的混合物从基片除去固化的光刻胶和光刻胶残余物,减小了金属腐蚀。
本发明提供了从基片溶脱光刻胶和光刻胶残余物(即使该光刻胶已被烧固和对短波长固化辐射曝光了)的组合物和方法。该组合物具有短溶脱时间,长效浸渍寿命,对金属的腐蚀减小了,能有效地溶脱光刻胶和聚合物残余物(从而避免了氧灰化,这是对其它组合物所要求的),并且它在长贮存期中是热稳定性的。这些溶脱组合物包括:(a)5wt%~50wt%的50%羟胺/50%水溶液;(b)0.1wt%~25wt%具有四个或更少的碳原子的一元羧酸或二元羧酸,例如甲酸、乙酸、丙酸等;以及(c)其余是有机溶剂体系,其成分例如:二甲亚砜(DMSO)、n-羟乙基吡咯烷酮(HEP)、n-甲基吡咯烷酮(NMP)、其它吡咯烷酮、环丁砜,或者其它的烷基亚砜或砜化合物。
更优选地,所述组合物含20~30wt%羟胺/水溶液,将pH降到8以下的足够的羧酸成分,其余是溶剂成分。
表1示出用于表2中所述试验1~24的组合物。表1的最后一栏示出所述组合物对于聚合物清洗和金属腐蚀的总特性(分1~5级,其中1是最好的,5则是最差的)。
表1
NH2OH/H2O(50-50) | 酸 | 溶剂 | H2O | PH/一夜 | 稳定剂 | 聚合物清洁/腐蚀 | |
1. | 30% | 0% | 35%环丁砜35%HEP | - | 9.77/9.90 | 1.5%TBC | -/5 |
2. | 29% | 1%甲酸 | 35%环丁砜35%HEP | - | 7.72/8.04 | 1.5%TBC | -/4.8 |
3. | 28% | 2%甲酸 | 35%环丁砜35%HEP | - | 7.40/7.73 | 1.5%TBC | -/4.5 |
4. | 25% | 5%甲酸 | 35%环丁砜35%HEP | - | 6.87/7.24 | 1.5%TBC | 1/1 |
5 | 22.5% | 7.5%甲酸 | 35%环丁砜35%HEP | - | 6.57/6.87 | 1.5%TBC | 1/2 |
6. | 20% | 10%甲酸 | 35%环丁砜35%HEP | - | 6.20/6.54 | 1.5%TBC | 1/2 |
7. | 16.66% | 13.34%甲酸 | 35%环丁砜35%HEP | - | 4.72/5.36 | 1.5%TBC | 1/2.5 |
8. | 25% | - | 62.5%DGA | 12.5% | 11.92/11.96 | 5%儿茶酚 | 3/3 |
9. | 25% | - | 62.5%IPA | 12.5% | 11.94/11.97 | 5%儿茶酚 | 3/3 |
10. | 25% | - | 62.5%MEA | 12.5% | 11.96/11.98 | 5%儿茶酚 | 3/3 |
11. | 15%DNH2OH | - | 42.5%环丁砜42.5%HEP | - | 9.65/10.04 | - | 5/4 |
12. | - | 10%甲酸 | 45%环丁砜45%HEP | - | 2.56/2.76 | - | 4/- |
13. | 22.5% | 7.5%甲酸 | 35%环丁砜35%NMP | - | 6.64/6.74 | 1.5%TBC | 1/2 |
14. | 20% | 10%乙酸 | 35%环丁砜35%BNMP | - | 6.72/-6.84 | 1.5%TBC | 1/2 |
15. | 30% | 0% | 70%DMSO | - | 9.82/9.94 | - | 2/2 |
16. | 30% | 5%甲酸 | 65%DMSO | - | 6.58 | - | 1/1 |
17. | 30% | 0% | 35%DMSO35%HEP | - | 8.52 | 1%TBC | 1/2 |
18. | 25% | 5%甲酸 | 35%DMSO35%HEP | - | 6.25 | 1%TBC | 1/1 |
表1中,NH2OH/H2O表示50%NH2OH/50%H2O溶液(可作为FH-50得自Howard Hall Division,R.W.Greef & Co.),DNH2OH表示脱水羟胺(少于5%水),DGA是二甘醇胺,IPA是异丙醇胺,MEA是单乙醇胺,DMSO是二甲亚砜,HEP是n-羟乙基吡咯烷酮,NMP是n-甲基吡咯烷酮,TBC是叔丁基儿茶酚(缓蚀剂),所述pH是在制备时和放置一夜后在19∶1体积稀释下测定的。表中百分数都是重量百分数,NH2OH/H2O、酸、溶剂和水总计100%,缓蚀剂除外。
表2描述了在得自UMC(台湾)Fab III的晶片上的试验,用TOK IP2550光刻胶覆盖并用Lam Research(TCP 9600)和Applied Materials(P5000)等离子体金属蚀刻机进行干蚀刻。“PR”表示光刻胶未被蚀刻的试验,但用试验溶液除去了。所述试验描述了这样的金属膜:TiN(500)在Al/Cu(8000)上,后者在Ti/TIN(1200)上。
所述试验溶液被加热到操作温度(70℃)。将试验晶片浸入试验溶液达规定的时间,在室温下转入异丙醇浴液达2分钟,再用氮气吹干。在显微镜(400X)下或场致发射扫描电子显微镜(FESEM)(JEOL 6320F)下检查所述晶片。
表2
试验号 | 晶片类型(金属蚀刻机) | 溶液号 | 温度(℃) | 时间(分) | 结果 |
1 | TCP 9600 | 1 | 70 | 20 | 14分钟后金属线开始隆起(lift off)。20分钟后90%的金属线隆起。 |
2 | TCP 9600 | 2 | 70 | 20 | 16分钟后金属线开始隆起。20分钟后60%的金属线隆起。 |
3 | TCP 9600 | 3 | 70 | 20 | 18分钟后金属线开始隆起。20分钟后29%的金属线隆起。 |
4 | TCP 9600 | 4 | 70 | 30 | 无可见的变化。从SEM可见,未发现侧壁聚合物,对金属线未腐蚀。 |
5 | TCP 9600 | 5 | 70 | 30 | 无可见的变化。从SEM可见,未发现侧壁聚合物,但对Al/Cu层轻微蚀刻了。 |
6 | TCP 9600 | 6 | 70 | 30 | 无可见的变化。从SEM可见,无侧壁聚合物,但对Al/Cu层轻微蚀刻了。 |
7 | TCP 9600 | 7 | 70 | 30 | 无可见变化。从SEM可见,无侧壁聚合物,但对Al/Cu层蚀刻了。 |
8 | TCP 9600 | 8 | 70 | 30 | 无可见的变化。从SEM可见,80%侧壁聚合物被清除了并且对Ti/TiN底层有少许蚀刻。 |
9 | TCP 9600 | 9 | 70 | 30 | 无可见的变化。从SEM可见,80%侧壁聚合物被清除了并且对Ti/TiN底层有少许蚀刻。 |
10 | TCP 9600 | 10 | 70 | 30 | 无可见的变化。从SEM可见,90%侧壁聚合物被清除了,对Al/Cu层有一定的腐蚀,对Ti/TiN底层有一定的蚀刻。 |
11 | TCP 9600 | 11 | 70 | 30 | 无可见的变化。从SEM可见,<10%侧壁聚合物被清除并且无腐蚀。 |
12 | TCP 9600 | 12 | 70 | 30 | 无可见的变化。从SEM可见,40%侧壁聚合物被清除了并且无腐蚀。 |
续表2
试验号 | 晶片类型(金属蚀刻机) | 溶液号 | 温度(℃) | 时间(分) | 结果 |
13 | P 5000 | 6 | 70 | 120 | 在显微镜(400X)下无可见的变化。金属未隆起。 |
14 | P 5000 | 8 | 70 | 120 | 60分钟后金属线开始隆起,2小时后金属线100%隆起。 |
15 | P 5000 | 9 | 70 | 120 | 60分钟后金属线开始隆起,2小时后金属线100%隆起。 |
16 | P 5000 | 10 | 70 | 120 | 60分钟后金属线开始隆起,2小时后金属线100%隆起。 |
17 | P 5000 | 13 | 70 | 30 | 无可见的变化。从SEM可见,100%侧壁聚合物被清除了,并且对Ti/TiN底层未蚀刻。 |
18 | P 5000 | 14 | 70 | 30 | 无可见的变化。从SEM可见,100%侧壁聚合物被清除了,并且对Ti/TiN底层未蚀刻。 |
19 | P 5000 | 13 | 70 | 120 | 在显微镜(400X)下无可见的变化。金属未隆起。 |
20 | P 5000 | 14 | 70 | 120 | 在显微镜(400X)下无可见的变化。金属未隆起。 |
21 | w/PR | 5 | 70 | 30 | 光刻胶在2分钟内被剥离。 |
22 | w/PR | 10 | 70 | 30 | 光刻胶在5分钟内被剥离。 |
23 | w/PR | 12 | 70 | 30 | 光刻胶在8分钟内被剥离。 |
24 | w/PR | 13 | 70 | 30 | 光刻胶在5分钟内被剥离。 |
25 | P 5000 | 16 | 70 | 120 | 从SEM可见,100%侧壁聚合物被清除了并且未腐蚀金属。 |
26 | P 5000 | 17 | 70 | 120 | 从SEM可见,100%侧壁聚合物被清除了,对Ti层轻微腐蚀,金属未隆起。 |
27 | P 5000 | 18 | 70 | 120 | 从SEM可见,100%侧壁聚合物被清除了,对Ti层轻微腐蚀,金属未隆起。 |
表2中归纳的试验数据阐述了所述组合物的有效溶脱能力,同时避免了金属腐蚀:1.试验1、2和3表明,逐渐往羟胺、环丁砜、HEP溶液中添加甲酸减少了金属线的隆起。2.试验4~7表明,侧壁聚合物可被溶液4~7 100%清除。这些溶液的酸性越大(6和7),表现出对铝/铜层一定程度的蚀刻。现有技术中已知的溶液8、9和10表现为一定程度的金属蚀刻和不充分 地除去侧壁聚合物。试验4~7还表现为:随着溶液酸性变得更强,它将腐蚀Al-Cu层。优选的配方是最接近中性(pH7)的溶液。3.试验11和12阐明了,分别减少组合物中水或羟胺的量导致不完全清除侧壁聚合物。4.试验13~16表明,本发明的溶液比应用羟胺和单乙醇胺、异丙醇胺或二甘醇胺的溶液腐蚀作用更小。5.试验17和18表明,用n-甲基吡咯烷酮(NMP)代替HEP的溶液是一种有效的侧壁聚合物清除剂。6.试验18表明,乙酸是甲酸的有效替代物。7.试验19和20表明,试验17和18的溶液在70℃下120分钟后不使金属线隆起。8.试验21~24表明,本发明的组合物对光刻胶的溶脱时间与应用羟胺、单乙醇胺和水的光刻胶溶脱剂的相当。9.试验25~27表明,往羟胺/DMSO溶液或羟胺/DMSO/HEP溶液中添加甲酸减少了金属线的隆起,并且有效地除去了侧壁聚合物。10.通过在室温下将数片铜箔置于溶液5和8中达24小时而进行了铜腐蚀试验。24小时后,通过HP-4500 ICP/MS光谱仪测得溶液5的铜浓度是360ppm,溶液8的铜浓度则是2,500ppm。该结果对于主要应用铜作为金属的电路设计意义特别大。该技术中近来倾向于应用100%铜作为半导体设计的金属层(代替铝/铜)。
虽然前面描述了本发明优选的实施方案,但应懂得,对其进行某些改变和修饰对本领域技术人员而言是显而易见的。因此希望所附权利要求书应被当作涵盖属于本发明的真实精神和范围之内的所有这些改变和修饰。
Claims (18)
1.一种从基片除去光刻胶和光刻胶残余物的组合物,该组合物包括:
(a)2.5wt%~40wt%羟胺;
(b)2.5wt%~40wt%水;
(c)0.1wt%~25wt%具有四个或更少的碳原子的一元羧酸或二元
羧酸;以及
(d)10wt%~90wt%选自下组的有机溶剂:烷基亚砜、烷基砜和吡
咯烷酮。
2.权利要求1的组合物,其中所述有机溶剂选自:二甲亚砜、环丁砜、n-羟乙基吡咯烷酮和n-甲基吡咯烷酮。
3.权利要求1的组合物,其中羟胺的存在量是10wt%~20wt%,水的存在量是10wt%~20wt%,所述有机溶剂的存在量是40wt%~80wt%。
4.权利要求3的组合物,其中所述酸存在的量足以将pH降到8以下,此时的pH是在19∶1体积稀释的水中测定的。
5.权利要求4的组合物,其中所述酸存在的量足以引起pH为6~7.5,此时的pH是在19∶1稀释的水中测定的。
6.权利要求2的组合物,其中羟胺的存在量是10wt%~20wt%,水的存在量是10wt%~20wt%,并且所述有机溶剂的存在量是40wt%~80wt%。
7.权利要求6的组合物,其中所述酸存在的量足以将pH降到8以下,此时的pH是在19∶1体积稀释的水中测定的。
8.权利要求8的组合物,其中所述酸存在的量足以引起pH为6~7.5,此时的pH是在19∶1稀释的水中测定的。
9.一种从基片除去光刻胶和光刻胶残余物的组合物,该组合物基本上包括:
(a)10wt%~20wt%羟胺;
(b)10wt%~20wt%水;
(c)0.1wt%~25wt%具有四个或更少的碳原子的一元羧酸或二元
羧酸,其中所述酸存在的量足以引起pH为6~7.5,此时的
pH是在19∶1稀释的水中测定的;以及
(d)40wt%~80wt%选自下组的有机溶剂:二甲亚砜、环丁砜、n-
羟乙基吡咯烷酮和n-甲基吡咯烷酮。
10.一种从基片除去光刻胶和光刻胶残余物的方法,该方法包括将所述基片与溶脱液接触达足以从所述基片除去光刻胶或残余物的时间,其中所述溶脱液包括:
(a)2.5wt%~40wt%羟胺;
(b)2.5wt%~40wt%水;
(c)0.1wt%~25wt%具有四个或更少的碳原子的一元羧酸或二元
羧酸;以及
(d)10wt%~90wt%选自下组的有机溶剂:烷基亚砜、烷基砜和吡
咯烷酮。
11.权利要求10的方法,其中所述有机溶剂选自:二甲亚砜、环丁砜、n-羟乙基吡咯烷酮和n-甲基吡咯烷酮。
12.权利要求10的方法,其中羟胺的存在量是10wt%~20wt%,水的存在量是10wt%~20wt%,并且所述有机溶剂的存在量是40wt%~80wt%。
13.权利要求12的方法,其中所述酸存在的量足以将pH降到8以下,此时的pH是在19∶1体积稀释的水中测定的。
14.权利要求13的方法,其中所述酸存在的量足以引起pH为6~7.5,此时的pH是在19∶1稀释的水中测定的。
15.权利要求11的方法,其中羟胺的存在量是10wt%~20wt%,水的存在量是10wt%~20wt%,并且所述有机溶剂的存在量是40wt%~80wt%。
16.权利要求15的方法,其中所述酸存在的量足以将pH降到8以下,此时的pH是在19∶1体积稀释的水中测定的。
17.权利要求16的方法,其中所述酸存在的量足以引起pH为6~7.5,此时的pH是在19∶1稀释的水中测定的。
18.一种从基片除去光刻胶和光刻胶残余物的方法,该方法包括将所述基片与溶脱液接触达足以从所述基片除去光刻胶或残余物的时间,其中所述溶脱液基本上包括:
(a)10wt%~20wt%羟胺;
(b)10wt%~20wt%水;
(c)0.1wt%~25wt%具有四个或更少的碳原子的一元羧酸或二元
羧酸,其中所述酸存在的量足以引起pH为6~7.5,此时的
pH是在19∶1稀释的水中测定的;以及
(d)40wt%~80wt%选自下组的有机溶剂:二甲亚砜、环丁砜、n-
羟乙基吡咯烷酮和n-甲基吡咯烷酮。
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KR100745891B1 (ko) * | 2001-12-14 | 2007-08-02 | 주식회사 하이닉스반도체 | 포토레지스트 세정액 조성물 |
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US7413848B2 (en) * | 2005-07-27 | 2008-08-19 | United Microelectronics Corp. | Method of removing photoresist and photoresist rework method |
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CN101473420B (zh) * | 2006-06-21 | 2010-09-22 | 出光兴产株式会社 | 脱模组合物、tft基板的制造方法及脱模组合物的循环方法 |
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US5279771A (en) * | 1990-11-05 | 1994-01-18 | Ekc Technology, Inc. | Stripping compositions comprising hydroxylamine and alkanolamine |
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US5308745A (en) * | 1992-11-06 | 1994-05-03 | J. T. Baker Inc. | Alkaline-containing photoresist stripping compositions producing reduced metal corrosion with cross-linked or hardened resist resins |
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US5665688A (en) * | 1996-01-23 | 1997-09-09 | Olin Microelectronics Chemicals, Inc. | Photoresist stripping composition |
US5780406A (en) * | 1996-09-06 | 1998-07-14 | Honda; Kenji | Non-corrosive cleaning composition for removing plasma etching residues |
US5968848A (en) * | 1996-12-27 | 1999-10-19 | Tokyo Ohka Kogyo Co., Ltd. | Process for treating a lithographic substrate and a rinse solution for the treatment |
-
1998
- 1998-03-03 US US09/034,552 patent/US6432209B2/en not_active Expired - Fee Related
-
1999
- 1999-03-03 CN CN99800385.9A patent/CN1277682A/zh active Pending
- 1999-03-03 EP EP99910318A patent/EP0981779A1/en not_active Withdrawn
- 1999-03-03 JP JP54423799A patent/JP2002505765A/ja active Pending
- 1999-03-03 KR KR19997010103A patent/KR20010012158A/ko not_active Application Discontinuation
- 1999-03-03 AU AU29318/99A patent/AU2931899A/en not_active Abandoned
- 1999-03-03 WO PCT/EP1999/001360 patent/WO1999045443A1/en not_active Application Discontinuation
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1682155B (zh) * | 2002-09-30 | 2010-05-26 | 株式会社东进世美肯 | 光刻胶剥离剂组合物 |
CN101156111B (zh) * | 2005-04-06 | 2011-04-13 | 株式会社东进世美肯 | 用于半导体器件的光刻胶的去除剂组合物 |
CN102051283B (zh) * | 2009-10-30 | 2014-11-05 | 安集微电子(上海)有限公司 | 一种含羟胺的清洗液及其应用 |
Also Published As
Publication number | Publication date |
---|---|
JP2002505765A (ja) | 2002-02-19 |
EP0981779A1 (en) | 2000-03-01 |
US6432209B2 (en) | 2002-08-13 |
WO1999045443A1 (en) | 1999-09-10 |
AU2931899A (en) | 1999-09-20 |
US20020013240A1 (en) | 2002-01-31 |
KR20010012158A (ko) | 2001-02-15 |
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