CN1272602C - Nondestructive testing method for every layer thin film thickness of SAW device with multilayer film structure - Google Patents

Nondestructive testing method for every layer thin film thickness of SAW device with multilayer film structure Download PDF

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CN1272602C
CN1272602C CNB2005100133786A CN200510013378A CN1272602C CN 1272602 C CN1272602 C CN 1272602C CN B2005100133786 A CNB2005100133786 A CN B2005100133786A CN 200510013378 A CN200510013378 A CN 200510013378A CN 1272602 C CN1272602 C CN 1272602C
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film
print
thickness
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value
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CN1673673A (en
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杨保和
陈希明
吴小国
马靖
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Tianjin University of Technology
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Abstract

The present invention discloses an each-layer film nondestructive thickness measuring method for an SAW device in a multilayer film structure. The present invention comprises: the measuring coefficient k of the measured film sample sheet to be is determined firstly, the integral thickness h of the measured film sample sheet is measured, and the thickness (h<film>=h<base sheet>-h<sample sheet>) of the measured film is calculated. On the basis of the micron measuring principle of a parallel-plate capacitor, the measuring accuracy of the multilayer film thickness measuring method of the present invention can achieve 0.001 micrometer. The method of the present invention does not need to calibrate the relative dielectric constant of the measured material in advance, does not need special preparation samples, and is a non-contact measuring method; the present invention has the advantages of simple measuring method and low cost; therefore, the present invention is suitable for various films, and is especially suitable for each-layer film thickness nondestructive measurement and planeness measurement in the preparation of the base sheet in a multilayer structure; the present invention has important significance in improving the performance of the SAW device in a diamond multilayer structure.

Description

Each layer film thickness non-destructive measuring method of multi-layer film structure SAW device
[technical field]
The present invention relates to the field of electronic devices of membrane structure, each layer film thickness non-destructive measuring method of particularly a kind of multi-layer film structure SAW device.
[technical background]
In recent years, the multi-layer film structure electron device has become the important component part of emerging cross disciplines such as microelectronics, optoelectronics, magneto-electronics, sensor and emerging industry.Along with the development of electric thin science and technology, various membraneous materials, particularly the multi-layer film structure material continues to bring out, and to the sign of membraneous material thickness, pattern and structure, has become the problem of generally being concerned about in film preparation and the application.Especially the film thickness of multi-layer film structure SAW device is unusual important parameters, and is harmless, accurately measure its each tunic thickness, significant to improving diamond multilayer membrane structure SAW device performance.In the prior art, the main method of MEASUREMENTS OF THIN thickness has: scanning electron microscope (SEM), step instrument, optical method mensuration and conventional electric capacity thickness measuring method.Wherein,
SEM method film sample need cut out section and polishing, because the existence of stress in the film deposition when cutting exemplar or polishing section, causes that very easily exemplar fragmentation or film come off;
Step instrument and optical measurement all need to prepare the film that step is arranged, because the step that thin film preparation process forms is very not clear, measuring relative errors is bigger.Therefore said method is unsuitable for the thickness detection in film, particularly multi-layer film structure preparation and the application.In addition, used light source was transparent when the optical method mensuration also needed film to measurement, and each layer film of multi-layer film structure SAW device is scarcely transparent.
Conventional parallel plate capacitor thickness measuring method need be demarcated the accurate relative dielectric constant ε of membraneous material numerical value in advance, could carry out measurements and calculations to film.And widely different by the ε of the film (because method is different with technology) of various artificial growing methods preparations, be difficult to determine accurate relative dielectric constant ε numerical value.The ε value of the membraneous material of certain technology preparation can not be as the relative dielectric constant of such membraneous material, otherwise can cause very big deviation owing to the singularity of film preparation, each layer film thickness that therefore also can't be applied to multi-layer film structure SAW device can't harm, accurately measures.
[summary of the invention]
Purpose of the present invention is exactly in order to solve the problems of the prior art, and each layer film thickness non-destructive measuring method of a kind of multi-layer film structure SAW device is proposed, this method is carried out the thickness measuring of multi-layer film material based on parallel plate capacitor micrometer principle, can can't harm, accurately measure each tunic thickness of film of multi-layer film structure SAW device, thereby improve the performance of diamond multilayer membrane structure SAW device.
The technical solution adopted in the present invention is a kind of: each layer film thickness non-destructive measuring method of multi-layer film structure SAW device is characterized in that operating according to the following steps:
1) behind the heavy film of tested thin layer, measures the gross thickness h of print at least Print:
The first step, determine the measurement coefficient k of this tested film print:
(1) film print to be measured is positioned on the worktable of parallel plate capacitor dial gauge, go up,
Mobile top crown writes down initial position voltage table displayed value and operating position initial value then to the position of the range ability of instrument down;
Regulate wedge type self-powered platform knob at least for (2) 10 times, make vertical liter of bottom crown or fall Δ h distance, and write down each voltage table displayed value and operating position value;
(3) one group of numerical value noting is carried out least square linear fit;
(4), determine the measurement coefficient k of tested film print according to the linear relationship between clearance h and the output voltage V
ΔV＝kΔh
Second goes on foot, and measures the gross thickness h of this tested film print Print:
(1) aforementioned tested film print is taken out from worktable, adjust top crown to V 0=0 place;
(2) put into tested film print again, the record numerical value V that this moment, voltage table showed;
(3) with V value and K value substitution following formula, the thickness that tested film print is tried to achieve in calculating is:
2) thickness h of the tested thin layer of calculating Film:
Getting the gross thickness of the forward and backward print of the heavy film of tested thin layer calculates:
h Film=h Print-h Substrate
The present invention is based on parallel plate capacitor micrometer principle and carry out the thickness measuring method of multi-layer film material, measuring accuracy reaches 0.001 μ m.This method does not need to demarcate in advance the measured material relative dielectric constant, does not need the special preparation exemplar, is non-cpntact measurement, and measuring method is simple, cost is low.Therefore be applicable to various films, be specially adapted to the thick nondestructive measurement and the measurement of planeness of each tunic in the sandwich construction substrate preparation.Because the film thickness of multi-layer film structure SAW device is unusual important parameters, therefore harmless, accurately measure its each tunic thickness, be significant to improving diamond multilayer membrane structure SAW device performance.
[description of drawings]
Fig. 1 is measuring principle figure;
Fig. 2 (a) Si membraneous material is measured matched curve;
Fig. 2 (b) diamond/Si composite film material is measured matched curve.
[embodiment]
The present invention utilizes two plate electrodes up and down of parallel plate capacitor dial gauge, measures variable quantity between two electrodes to measure the thickness of exemplar film, and its schematic diagram is seen Fig. 1.
Among the figure, A operational amplifier (Operational Amplifier), Vs are square wave excitation oscillator signal source voltage, and Cs is standard capacitance (1pF), and h is dull and stereotyped sensing capacitance C up and down fBetween the clearance, V is an amplifier output voltage.The relation of computing capacitive transducer and clearance h is as follows:
V = - ( C s V s &epsiv; &epsiv; 0 S ) h = kh ( 2 )
In the formula: S is dull and stereotyped sensing capacitance C up and down fEnd face useful area, ε are the relative dielectric constants of measured material, ε 0It is airborne specific inductive capacity.Therefore, for certain material, measurement coefficient k is a constant.
When measured parameter (specific inductive capacity of clearance, film) variation changes the electric capacity of sensor, the amplitude of the amplitude-modulated signal of circuit output also changes thereupon, after precision rectifying, filtering, just obtained changing corresponding voltage signal with measured parameter.
According to formula (1), tested film thickness
h film = h 0 - h = v 0 k 0 - v k , Work as V 0=0 o'clock,
h film = | - V k | &CenterDot; &CenterDot; &CenterDot; ( 2 )
In the formula, h 0, h is respectively does not have and the clearance between the dull and stereotyped sensing capacitance up and down when tested film is arranged; V 0, V is respectively does not have and amplifier output voltage when tested film is arranged, (, regulate the zero potential device usually and make initial output voltage V for ease of measuring 0=0).
If tested film relative dielectric constant ε is unknown, then can't calculate k value and tested film thickness, therefore need to demarcate the accurate relative dielectric constant ε of membraneous material numerical value.
The present invention proposes unknown relative dielectric constant ε value and determines that k value method is as follows:
Variable quantity pass by formula (1) output voltage V variable quantity and air-gap h is
ΔV＝kΔh (3)
Through overregulating bottom crown change in location air-gap is Δ h 1, Δ h 2, Δ h 3... Δ h n, carry out multimetering, can measure one group of output voltage variable quantity, satisfy following system of equations:
ΔV i＝kΔh i， i＝1，2，..n (4)
In the formula, Δ V iThe variable quantity of output voltage when representing i measuring position; Δ h iBe the worktable lifting changing value, represent basic air-gap height.
Therefore, by measuring numerical value Δ V to one group i, Δ h iCarry out linear fit, can find out the linear coefficient k between clearance Δ h and the output voltage Δ V.Linear coefficient k can embody the influence of the relative dielectric constant of different membraneous materials to thickness measuring.
Use the present invention when practical measurement film layer thickness, at first to determine the print gross thickness before the heavy film of tested thin layer, sink film then, determine that more tested thin layer sinks print gross thickness behind the film, calculate at last behind the heavy film with heavy film before difference, can draw the thickness of this layer film.
For the substrate gross thickness h before the heavy film of tested thin layer Substrate, can be with the thickness h of measuring print behind the heavy film of tested thin layer PrintMethod draw, also can measure with the parallel plate capacitor dial gauge, draw by known DIELECTRIC CONSTANT numerical evaluation, that is:
(1) the parallel plate capacitor dial gauge is adjusted top crown to V 0=0 place;
(2) put into tested substrate, the record numerical value V that this moment, voltage table showed;
(3) with V value and known DIELECTRIC CONSTANT numerical value substitution following formula, the thickness that tested substrate is tried to achieve in calculating is:
Figure C20051001337800081
In the formula k = &epsiv; &epsiv; 0 S C S V S
Measure before the heavy film gross thickness of print after the substrate and heavy film with the present invention, can press following operation successively:
(1) print to be measured is positioned under the selected good electrode probe (electric capacity top crown), moves up and down top crown, write down initial position voltage table displayed value and operating position initial value then to the appropriate location;
(2) regulate wedge type self-powered platform knob with vertical liter of realizing bottom crown (worktable) or fall Δ h, write down the magnitude of voltage V that change this moment;
Repeat above-mentioned measurement (3) at least 10 times, one group of numerical value noting is carried out least square linear fit;
(4) find out linear relationship between clearance h and the output voltage V, determine the measurement coefficient k of tested film.
(5) take out tested exemplar on the worktable, adjust top crown to a suitable position and make voltage table be shown as " 0 ", i.e. V 0=0, place exemplar, write down the numerical value V that this moment, voltage table showed;
(6), calculate the gross thickness of trying to achieve exemplar with V value substitution following formula
Fig. 2 is that (diamond film/Si) is measured the example of adamas thickness to the multilayer material exemplar.
At first, before the depositing diamond film, measure silicon chip thickness by this method or other conventional method.If the thickness measured value of Si substrate is 252.6um;
Then, after the depositing diamond film, by above-mentioned embodiment (1)-(4), the measurement coefficient k that determines tested exemplar is 0.11082, as Fig. 2 (b);
Secondly, by above-mentioned embodiment (5), record magnitude of voltage-30.274;
Once more, calculating the actual gross thickness of exemplar by above-mentioned embodiment (6) by formula (2) is 273.18um;
At last, be measured as 252.6um with the thickness of si substrate and subtracted each other, the thickness that can calculate diamond thin is 20.58um.
The linear fit formula of Fig. 2 (a) Si sheet measurement data is
ΔV＝0.19391Δh+0.03971 (5)
The linear fit formula of the measurement data of Fig. 2 (b) diamond/Si composite membrane is
ΔV＝0.11082Δh-0.01949 (6)
The slope of formula (5), (6) cathetus equation is that the k value is respectively 0.1939 and 0.11082.(5), second on (6) equation right side is the intercept of straight-line equation, only the air-gap size of selected initial instrument range position is relevant when measuring.
According to method of the present invention, if change the point position of tested exemplar, on whole diaphragm, carry out multimetering, also can realize the measurement of the thickness evenness of film.

Claims (3)

1. each layer film thickness non-destructive measuring method of multi-layer film structure SAW device is characterized in that operating according to the following steps:
1) behind the heavy film of tested thin layer, measures the gross thickness h of print at least Print:
The first step, determine the measurement coefficient k of this tested film print:
(1) film print to be measured is positioned on the worktable of parallel plate capacitor dial gauge, upper and lower mobile top crown writes down initial position voltage table displayed value and operating position initial value then to the position of the range ability of instrument;
Regulate wedge type self-powered platform knob at least for (2) 10 times, make vertical liter of bottom crown or fall Δ h distance, and write down each voltage table displayed value and operating position value;
(3) one group of numerical value noting is carried out least square linear fit;
(4), determine the measurement coefficient k of tested film print according to the linear relationship between clearance h and the output voltage V
ΔV＝kΔh
Second goes on foot, and measures the gross thickness h of this tested film print Print:
(1) aforementioned tested film print is taken out from worktable, adjust top crown to V 0=0 place;
(2) put into tested film print again, the record numerical value V that this moment, voltage table showed;
(3) with V value and k value substitution following formula, the thickness that tested film print is tried to achieve in calculating is:
Figure C2005100133780002C1
2) thickness h of the tested thin layer of calculating Film:
Getting before the heavy film of tested thin layer after the substrate and heavy film the gross thickness of print calculates:
h Film=h Print-h Substrate
2. according to the described non-destructive measuring method of claim 1, it is characterized in that the preceding substrate gross thickness h of the heavy film of tested thin layer Substrate, with the gross thickness h that measures print behind the heavy film of tested thin layer PrintMethod draw.
3. according to the described non-destructive measuring method of claim 1, it is characterized in that the preceding substrate gross thickness h of the heavy film of tested thin layer Substrate, measure with the parallel plate capacitor dial gauge, draw by known DIELECTRIC CONSTANT numerical evaluation.
CNB2005100133786A 2005-04-29 2005-04-29 Nondestructive testing method for every layer thin film thickness of SAW device with multilayer film structure Expired - Fee Related CN1272602C (en)

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CN101788260B (en) * 2010-03-18 2011-12-28 清华大学 Eddy current measuring method of thickness of metal film
CN102650661B (en) * 2012-04-27 2014-05-21 北京京东方光电科技有限公司 Measurement system for semi-conducting film
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