CN102650661B - Measurement system for semi-conducting film - Google Patents
Measurement system for semi-conducting film Download PDFInfo
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- CN102650661B CN102650661B CN201210129807.6A CN201210129807A CN102650661B CN 102650661 B CN102650661 B CN 102650661B CN 201210129807 A CN201210129807 A CN 201210129807A CN 102650661 B CN102650661 B CN 102650661B
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- 238000005259 measurement Methods 0.000 title claims abstract description 7
- 239000003990 capacitor Substances 0.000 claims abstract description 49
- 239000010409 thin film Substances 0.000 claims description 87
- 239000010408 film Substances 0.000 claims description 32
- 239000000758 substrate Substances 0.000 claims description 27
- 239000000523 sample Substances 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 6
- 238000012546 transfer Methods 0.000 claims description 6
- 239000012212 insulator Substances 0.000 claims description 5
- 238000002242 deionisation method Methods 0.000 claims description 4
- 230000005540 biological transmission Effects 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 abstract description 12
- 238000000034 method Methods 0.000 description 23
- 238000010586 diagram Methods 0.000 description 10
- 238000004590 computer program Methods 0.000 description 7
- 230000006870 function Effects 0.000 description 6
- 238000012986 modification Methods 0.000 description 5
- 230000004048 modification Effects 0.000 description 5
- 238000012545 processing Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000001939 inductive effect Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000006378 damage Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 241000931705 Cicada Species 0.000 description 1
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- 230000005856 abnormality Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/14—Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
The invention relates to the technical field of semi-conductors, in particular to a measurement system for a semi-conducting film, which is used for measuring the characteristic parameters of the semi-conducting film more accurately. When the measurement system for the semi-conducting film, provided by the embodiment of the invention, is used, capacitor plates are arranged above and below the semi-conducting film respectively, then the capacitance of the semi-conducting film can be determined according to the capacitance and the like between the upper and the lower capacitor plates, and further, relative dielectric constant and the like can be determined according to other measurement parameters. Besides, the upper capacitor plate can be arranged in different areas of the semi-conductor film, and after the capacitance of a plurality of sections of the semi-conducting film is determined, the fact that whether the uniformity of the semi-conducting film is good or not can be judged.
Description
Technical field
The present invention relates to technical field of semiconductors, relate in particular to a kind of measuring system of semiconductive thin film.
Background technology
By the characteristics determined of semiconductor itself, its electric conductivity is between conductor and insulator, and electric conductivity is relevant with multiple factors such as its ion doping concentration, density, thickness.In current semiconductor technology, semiconductor film only can carry out online thickness measure, can not measure film characteristics, as density, number of defects, impurity concentration etc.And film characteristics is very large to the properties influence of the product of being made up of semiconductor film., in prior art, there is not the method for measuring film characteristics.
In prior art, there is the mode of test characteristic parameter, but be not all suitable for semiconductor film.For example, while adopting four-point probe measurment method metallic film, on substrate, plate metallic film, then put into measuring equipment.Measuring equipment adopts four probe contacting metal retes, measures electric current or resistance between four probes.Because the resistance in certain area is relevant to the thickness of material, therefore can utilize resistance to try to achieve the thickness of metallic film.Can also adopt light reflection principle to survey non-metallic layer thickness, namely by the refraction coefficient difference of different medium, utilize the refraction principle of light, carry out thickness measure.
But probe contacting metal film time error is very large, and can have destruction to metal film, therefore the test point of this mode is restricted, can not be at the use area measure of semiconductive thin film.
Summary of the invention
The embodiment of the present invention provides the measuring system of semiconductive thin film, can measure more accurately the characterisitic parameter of semiconductive thin film.
The embodiment of the present invention provides a kind of measuring system of semiconductive thin film, comprising:
Electric charge maker, for generation of the first electric charge, and is transferred to base station by described the first electric charge;
Described base station, has conducting function, for providing the first electric charge as lower capacitor board to substrate;
Described substrate, is placed on the base station that the first electric charge is provided, and upper surface is coated with semiconductive thin film;
Upper capacitor board, is positioned at described semiconductive thin film top, and in the time that described base station provides the first electric charge, described upper capacitor board produces second electric charge electrically contrary with described the first electric charge;
Processor, for according to the second total amount of electric charge of the first total amount of electric charge of described the first electric charge and the second electric charge, determines described base station to the total capacitance between described upper capacitor board; According to space electric capacity and total capacitance between the electric capacity of described substrate, described base station and described upper capacitor board, determine the electric capacity of described substrate semiconductor-on-insulator film.
Preferably, described base station contains sheet metal.
Preferably, between described upper capacitor board and described semiconductive thin film, there is predetermined vertical range.
Preferably, also comprise: transfer equipment, for by described substrate transmission and pick and place at described base station.
Preferably, also comprise: Thinner Films probe, for measuring the thickness of described semiconductive thin film.
Preferably, described processor, also, for according to the area of the thickness of the electric capacity of described semiconductive thin film, described semiconductive thin film, described semiconductive thin film and permittivity of vacuum, determines the relative dielectric constant of described semiconductive thin film.
Preferably, described processor, also for comparing the relative dielectric constant of described semiconductive thin film and standard film dielectric constant range; When comparison result is in standard film dielectric constant range time, determine that the relative dielectric constant of described semiconductive thin film meets request for utilization.
Preferably, the quantity of described upper capacitor board is greater than for the moment, and described processor, also for determining respectively the electric capacity of the some positions of described semiconductive thin film according to each upper capacitor board; In the time that described some electric capacity is all in standard film dielectric constant range, determine that the homogeneity of described semiconductive thin film meets request for utilization.
Preferably, also comprise: deionization apparatus, for removing the ion on semiconductive thin film after described measurement.
The embodiment of the present invention provides the measuring system of semiconductive thin film, for measuring more accurately the characterisitic parameter of semiconductive thin film.The measuring system of the semiconductive thin film that the use embodiment of the present invention provides, form respectively capacitor board by the above and below at semiconductive thin film, can determine the electric capacity of semiconductive thin film by the electric capacity between upper and lower capacitor board etc., and then determine relative dielectric constant etc. according to other measurable parameters.And, can be on the zones of different of semiconductive thin film arranges respectively capacitor board, by the electric capacity of several semiconductive thin films of determining, whether the homogeneity that can judge semiconductive thin film good.
Accompanying drawing explanation
Fig. 1 is the measuring system schematic diagram of semiconductive thin film in the embodiment of the present invention;
Fig. 2 is the schematic diagram of semiconductive thin film measuring system in another embodiment of the present invention;
Fig. 3 is the schematic diagram of semiconductive thin film measuring system in further embodiment of this invention;
Fig. 4 is the schematic diagram of semiconductive thin film measuring system in another embodiment of the present invention;
Fig. 5 is the schematic diagram of semiconductive thin film measuring system in yet another embodiment of the invention.
Embodiment
Below in conjunction with each accompanying drawing, embodiment of the present invention technical scheme main realized to principle, embodiment and the beneficial effect that should be able to reach is at length set forth.
The problem existing in order to solve prior art, the embodiment of the present invention provides a kind of measuring system of semiconductive thin film, and as shown in Figure 1, the method comprises:
Concrete, base station 101 has good conducting function, can be used as the effect that lower capacitor board has supporting substrate 102 simultaneously and the first electric charge is provided.Wherein, while not starting to measure, on base station 101, do not carry electric charge, after placing substrate 102 and set capacitor board 104 etc. on base station 101, electric charge maker 100 starts, and generates the first electric charge and is also transferred to base station 101, and base station 101 starts to carry the first electric charge like this.
This base station 101 can contain sheet metal, so as by the first charge transfer to substrate 102.Because substrate 102 directly contacts with base station 101, the first electric charge on base station 101 is assembled at substrate 102 lower surfaces.Now, be positioned at the upper capacitor board 104 of semiconductive thin film 103 tops under the effect of capacity effect, produce second electric charge electrically contrary with the first electric charge.Wherein, between upper capacitor board 104 and semiconductive thin film 103, there is predetermined vertical range.Certainly, this predetermined vertical range can be 0, but in order to prevent from polluting electrostatic breakdown semiconductor layer in semiconductor surface and measuring process, it is good still having certain distance, as 100um～5000um.
Then, processor 105 just can, according to the first total amount of electric charge of the first electric charge and the second total amount of electric charge of the second electric charge that obtain from base station 101 and capacitor board 104, be determined the total capacitance value between the supreme capacitor board 104 of base station 101; According to space capacitance and total capacitance value between the capacitance of substrate 102, semiconductive thin film 103 and upper capacitor board 104, determine the capacitance of substrate 102 semiconductor-on-insulator films 103.Concrete, suppose that the total capacitance value between the supreme capacitor board 104 of base station 101 is C, the capacitance of substrate 102 is c1, and the space capacitance between semiconductive thin film 103 and upper capacitor board 104 is c2, and the capacitance of semiconductive thin film 103 is c3, basis
can obtain c3 value.Because the material of substrate 102 is fixed, thickness is fixed, and its electric capacity is constant constant, can obtain by prior art; Equally, space electric capacity is that c2 is also constant constant, can obtain by prior art.
Preferably, as shown in Figure 2, on the basis of Fig. 1, this system also comprises: transfer equipment 106, and for substrate 102 is transmitted and is picked and placeed at base station 101.During for fear of artificial carrying substrate 102, bring damage or pollute to semiconductive thin film 103, can use transfer equipment 106 substrate 102 to be sent to the relevant position of base station 101.
Preferably, as shown in Figure 3, on the basis of Fig. 1, this system also comprises: Thinner Films probe 107, for measuring the thickness of semiconductive thin film 103, and sends processor 105 to.Processor 105, according to the area of the thickness of the capacitance of semiconductive thin film, semiconductive thin film, semiconductive thin film and permittivity of vacuum, can be determined the relative dielectric constant of semiconductive thin film like this.Concrete, c3=ε * ε 0*S/d; In formula: the electric capacity that electric capacity c3 is semiconductive thin film, unit is F; ε is relative dielectric constant; ε 0 is permittivity of vacuum, 8.86 × 10 (12 side) F/m of unit; S is the area of semiconductive thin film, unit square rice; D is the thickness of semiconductive thin film.Thus, can obtain the relative dielectric constant ε of this semiconductive thin film.Further, processor 105 can also be compared the relative dielectric constant of semiconductive thin film and standard film dielectric constant range; When comparison result is in standard film dielectric constant range time, determine that the relative dielectric constant of semiconductive thin film meets request for utilization.For the singularity of semiconductor material, different levels of doping, its specific inductive capacity of the semiconductor of different component also can be variant, and above-mentioned standard film specific inductive capacity is just in normal volume production situation, process stabilizing, can repeat the specific inductive capacity of film obtaining with same process.Therefore, this standard film dielectric constant range can be produced under same process condition for normal amount, the mean value repeatedly and after rejecting abnormalities value.In the time that the relative dielectric constant of semiconductive thin film is in standard film dielectric constant range, can think that the relative dielectric constant of semiconductive thin film meets request for utilization; Otherwise, determine that the relative dielectric constant of semiconductive thin film does not meet request for utilization.
Except measuring the characterisitic parameter such as electric capacity, relative dielectric constant of semiconductive thin film, the method that the embodiment of the present invention provides can also be measured the homogeneity of semiconductive thin film.
As shown in Figure 4, on the basis of Fig. 1, the quantity of upper capacitor board 104 is greater than one and the vertical projection of each upper capacitor board 104 on semiconductive thin film 103 when not overlapping, and processor 105, also for determining respectively the capacitance of semiconductive thin film 103 according to each upper capacitor board 104; In the time that each capacitance is all in standard film dielectric constant range, determine that the homogeneity of semiconductive thin film 103 meets request for utilization.Preferably, when the quantity of upper capacitor board 104 is greater than one, each upper capacitor board 104 is identical with the vertical range of semiconductive thin film 103.
As shown in Figure 5, on the basis of Fig. 1, this system also comprises: deionization apparatus 108, and for removing the ion of measuring on rear semiconductive thin film 103.Residual static around can also removing before measuring.
Can there is the system of this measurement semiconductive thin film in above-mentioned transfer equipment, Thinner Films probe and deionization apparatus, also can exist in the mode of combination in any simultaneously.
Pass through foregoing description, can find out, the measuring system of the semiconductive thin film that the use embodiment of the present invention provides, form respectively capacitor board by the above and below at semiconductive thin film, can determine the electric capacity of semiconductive thin film by the electric capacity between upper and lower capacitor board etc., and then determine relative dielectric constant etc. according to other measurable parameters.And, can be on the zones of different of semiconductive thin film arranges respectively capacitor board, by the electric capacity of several semiconductive thin films of determining, whether the homogeneity that can judge semiconductive thin film good.
Those skilled in the art should understand, embodiments of the invention can be provided as method, system or computer program.Therefore, the present invention can adopt complete hardware implementation example, completely implement software example or the form in conjunction with the embodiment of software and hardware aspect.And the present invention can adopt the form at one or more upper computer programs of implementing of computer-usable storage medium (including but not limited to magnetic disk memory, CD-ROM, optical memory etc.) that wherein include computer usable program code.
The present invention is with reference to describing according to process flow diagram and/or the block scheme of the method for the embodiment of the present invention, equipment (system) and computer program.Should understand can be by the flow process in each flow process in computer program instructions realization flow figure and/or block scheme and/or square frame and process flow diagram and/or block scheme and/or the combination of square frame.Can provide these computer program instructions to the processor of multi-purpose computer, special purpose computer, Embedded Processor or other programmable data processing device to produce a machine, the instruction that makes to carry out by the processor of computing machine or other programmable data processing device produces the device for realizing the function of specifying at flow process of process flow diagram or multiple flow process and/or square frame of block scheme or multiple square frame.
These computer program instructions also can be stored in energy vectoring computer or the computer-readable memory of other programmable data processing device with ad hoc fashion work, the instruction that makes to be stored in this computer-readable memory produces the manufacture that comprises command device, and this command device is realized the function of specifying in flow process of process flow diagram or multiple flow process and/or square frame of block scheme or multiple square frame.
These computer program instructions also can be loaded in computing machine or other programmable data processing device, make to carry out sequence of operations step to produce computer implemented processing on computing machine or other programmable devices, thereby the instruction of carrying out is provided for realizing the step of the function of specifying in flow process of process flow diagram or multiple flow process and/or square frame of block scheme or multiple square frame on computing machine or other programmable devices.
Although described the preferred embodiments of the present invention, once those skilled in the art obtain the basic creative concept of cicada, can make other change and modification to these embodiment.So claims are intended to be interpreted as comprising preferred embodiment and fall into all changes and the modification of the scope of the invention.
Obviously, those skilled in the art can carry out various changes and modification and not depart from the spirit and scope of the present invention the present invention.Like this, if within of the present invention these are revised and modification belongs to the scope of the claims in the present invention and equivalent technologies thereof, the present invention is also intended to comprise these changes and modification interior.
Claims (9)
1. a measuring system for semiconductive thin film, is characterized in that, comprising:
Electric charge maker, for generation of the first electric charge, and is transferred to base station by described the first electric charge;
Described base station, has conducting function, for providing the first electric charge as lower capacitor board to substrate;
Described substrate, is placed on the base station that the first electric charge is provided, and upper surface is coated with semiconductive thin film;
Upper capacitor board, is positioned at described semiconductive thin film top, and in the time that described base station provides the first electric charge, described upper capacitor board produces second electric charge electrically contrary with described the first electric charge;
Processor, for according to from described base station and described capacitor board the first total amount of electric charge of described the first electric charge and the second total amount of electric charge of the second electric charge that obtain, determine described base station to the total capacitance value C between described upper capacitor board; According to the space capacitance c2 between the capacitance c1 of described substrate, described semiconductive thin film and described upper capacitor board and described total capacitance value C, determine the capacitance c3 of described substrate semiconductor-on-insulator film, wherein,
2. measuring system as claimed in claim 1, is characterized in that, described base station contains sheet metal.
3. measuring system as claimed in claim 1, is characterized in that, the vertical range between described upper capacitor board and described semiconductive thin film is 100um～5000um.
4. measuring system as claimed in claim 1, is characterized in that, also comprises: transfer equipment, and for by described substrate transmission and pick and place at described base station.
5. measuring system as claimed in claim 1, is characterized in that, also comprises: Thinner Films probe, for measuring the thickness of described semiconductive thin film, and sends described processor to;
Described processor, also, for according to the area of the thickness of the capacitance of described semiconductive thin film, described semiconductive thin film, described semiconductive thin film and permittivity of vacuum, determines the relative dielectric constant of described semiconductive thin film.
6. measuring system as claimed in claim 5, is characterized in that, described processor, also for comparing the relative dielectric constant of described semiconductive thin film and standard film dielectric constant range; When comparison result is in standard film dielectric constant range time, determine that the relative dielectric constant of described semiconductive thin film meets request for utilization.
7. measuring system as claimed in claim 1, it is characterized in that, the quantity of described upper capacitor board is greater than one and the vertical projection of each described upper capacitor board on described semiconductive thin film when not overlapping, described processor, also for determining respectively the capacitance of described semiconductive thin film according to each upper capacitor board; In the time that relative dielectric constant that each capacitance is determined is all in standard film dielectric constant range, determine that the homogeneity of described semiconductive thin film meets request for utilization.
8. measuring system as claimed in claim 7, is characterized in that, when the quantity of described upper capacitor board is greater than one, each described upper capacitor board is identical with the vertical range of described semiconductive thin film.
9. measuring system as claimed in claim 1, is characterized in that, also comprises:
Deionization apparatus, for removing the ion on semiconductive thin film after described measurement.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210129807.6A CN102650661B (en) | 2012-04-27 | 2012-04-27 | Measurement system for semi-conducting film |
| PCT/CN2012/085873 WO2013159528A1 (en) | 2012-04-27 | 2012-12-04 | Measurement system for semiconductor film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210129807.6A CN102650661B (en) | 2012-04-27 | 2012-04-27 | Measurement system for semi-conducting film |
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| Publication Number | Publication Date |
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| CN102650661A CN102650661A (en) | 2012-08-29 |
| CN102650661B true CN102650661B (en) | 2014-05-21 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201210129807.6A Expired - Fee Related CN102650661B (en) | 2012-04-27 | 2012-04-27 | Measurement system for semi-conducting film |
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| Country | Link |
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| CN (1) | CN102650661B (en) |
| WO (1) | WO2013159528A1 (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102650661B (en) * | 2012-04-27 | 2014-05-21 | 北京京东方光电科技有限公司 | Measurement system for semi-conducting film |
| CN104808072A (en) | 2015-04-29 | 2015-07-29 | 京东方科技集团股份有限公司 | Film structure, testing method thereof, display substrate and testing method and production method thereof |
| CN106018964B (en) * | 2016-05-16 | 2019-02-12 | 云南瑞博检测技术股份有限公司 | A kind of electrical parameter detection platform for thin-film material and micro-nano structure |
| CN109188231A (en) * | 2018-09-04 | 2019-01-11 | 京东方科技集团股份有限公司 | A kind of film quality detection device and preparation method thereof and detection method |
| CN113092870B (en) * | 2021-03-05 | 2022-05-24 | 深圳市信维通信股份有限公司 | Glue performance parameter testing method |
Citations (4)
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|---|---|---|---|---|
| CN1673673A (en) * | 2005-04-29 | 2005-09-28 | 天津理工大学 | Nondestructive testing method for every layer thin film thickness of SAW device with multilayer film structure |
| JP2009188170A (en) * | 2008-02-06 | 2009-08-20 | Dainippon Screen Mfg Co Ltd | Method of calculating physical value of insulating film |
| CN101872733A (en) * | 2009-04-24 | 2010-10-27 | 中微半导体设备(上海)有限公司 | System and method for sensing and removing residual charge of processed semiconductor process component |
| WO2012029933A2 (en) * | 2010-08-30 | 2012-03-08 | Kabushiki Kaisha Toshiba | Semiconductor device and drive method of electrostatic actuator |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102650661B (en) * | 2012-04-27 | 2014-05-21 | 北京京东方光电科技有限公司 | Measurement system for semi-conducting film |
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2012
- 2012-04-27 CN CN201210129807.6A patent/CN102650661B/en not_active Expired - Fee Related
- 2012-12-04 WO PCT/CN2012/085873 patent/WO2013159528A1/en active Application Filing
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1673673A (en) * | 2005-04-29 | 2005-09-28 | 天津理工大学 | Nondestructive testing method for every layer thin film thickness of SAW device with multilayer film structure |
| JP2009188170A (en) * | 2008-02-06 | 2009-08-20 | Dainippon Screen Mfg Co Ltd | Method of calculating physical value of insulating film |
| CN101872733A (en) * | 2009-04-24 | 2010-10-27 | 中微半导体设备(上海)有限公司 | System and method for sensing and removing residual charge of processed semiconductor process component |
| WO2012029933A2 (en) * | 2010-08-30 | 2012-03-08 | Kabushiki Kaisha Toshiba | Semiconductor device and drive method of electrostatic actuator |
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| Title |
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| 方小坤.半导体薄膜特性实时检测技术的研究.《中国优秀硕士学位论文全文数据库（信息科技辑）》.2007,(第1期),第I135-77页. * |
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| Publication number | Publication date |
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| CN102650661A (en) | 2012-08-29 |
| WO2013159528A1 (en) | 2013-10-31 |
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