CN109188231A - A kind of film quality detection device and preparation method thereof and detection method - Google Patents
A kind of film quality detection device and preparation method thereof and detection method Download PDFInfo
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- CN109188231A CN109188231A CN201811024439.2A CN201811024439A CN109188231A CN 109188231 A CN109188231 A CN 109188231A CN 201811024439 A CN201811024439 A CN 201811024439A CN 109188231 A CN109188231 A CN 109188231A
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- underlay substrate
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2601—Apparatus or methods therefor
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/131—Interconnections, e.g. wiring lines or terminals
Abstract
The present invention discloses a kind of film quality detection device and preparation method thereof and detection method, is related to field of display technology, in the case where the film quality better performances to guarantee insulating layer, reduces the oxidizing intensity of metal layer when forming insulating layer.The film quality detection device includes underlay substrate and at least one capacitor for being located on underlay substrate, and each capacitor includes the first metal layer, intermediate insulating layer and second metal layer being cascading；The first metal layer is located at second metal layer where underlay substrate in the orthographic projection of plate face and with overlapping region in the orthographic projection of plate face where underlay substrate, intermediate insulating layer at least has climbing portion, and the orthographic projection of climbing portion plate face where underlay substrate is located at overlapping region.The production method of the film quality detection device is for making above-mentioned film quality detection device.Film quality detection device provided by the invention and preparation method thereof and detection method are for detecting in film quality uniformity.
Description
Technical field
The present invention relates to field of display technology more particularly to a kind of film quality detection device and preparation method thereof and detection side
Method.
Background technique
Organic electroluminescent LED (Organic Light-Emitting Diode, be abbreviated as OLED) display is one
The self luminous flat panel display equipment of kind is not required to backlight, Flexible Displays can be achieved, has a good application prospect.
Existing OLED display includes array substrate and the light-emitting element array that is formed in array substrate.Array substrate
The insulating layer of included thin film transistor (TFT) generally uses the technique of high temperature deposition to be made, but this is but also prior to insulating layer
The metallic diaphragm of formation is easy to happen oxidation.During actual fabrication, if to guarantee that insulating layer has high compactness,
It needs using depositing temperature depositing insulating layer high as far as possible, but this is easy so that oxygen occurs prior to the metallic diaphragm that insulating layer is formed
Change problem.And if to reduce the oxidizing intensity of the metallic diaphragm formed prior to insulating layer, it is exhausted that production need to be just reduced as far as possible
The depositing temperature of edge layer, but this is but also the compactness of insulating layer is affected, and in the etching gradient angle ratio of metallic diaphragm
When larger, insulating layer correspond to the larger position of the metallic diaphragm gradient region is relatively thin or film quality is than more loose, cause more
After secondary high-temperature process, the film layer in this region of insulating layer is broken, so that the metal layer generation for being located at the two sides of insulating layer is short
Road.
In order to detect the film quality uniformity in this region of insulating layer, generally using hydrofluoric acid corrode by the way of to insulating layer this
A region is sampled, and then utilizes the membrane uniformity in this region of scanning electron microscopic observation insulating layer.But this sampling side
The sample point of formula is very few, there are certain contingency, is difficult to reflect the film quality performance in this region of insulating layer.
Summary of the invention
The purpose of the present invention is to provide a kind of film quality detection device and preparation method thereof and detection methods, to guarantee to insulate
In the case where the film quality better performances of layer, when reduction forms insulating layer, the oxidizing intensity to the metal layer formed prior to insulating layer.
To achieve the goals above, the invention provides the following technical scheme:
A kind of film quality detection device, the film quality detection device include underlay substrate and are located on the underlay substrate at least
One capacitor, each capacitor include the first metal layer, the intermediate insulation that the direction far from the underlay substrate is stacked
Layer and second metal layer；The orthographic projection of the first metal layer plate face where underlay substrate is located at the second metal layer and is serving as a contrast
Where substrate in the orthographic projection of plate face, the first metal layer orthographic projection of plate face and second gold medal where underlay substrate
The orthographic projection for belonging to layer plate face where underlay substrate has overlapping region, and the intermediate insulating layer at least has climbing portion, described
The orthographic projection of climbing portion plate face where underlay substrate is located at the overlapping region.
Compared with prior art, in film quality detection device provided by the invention, the first metal layer that each capacitor includes exists
The orthographic projection of plate face where underlay substrate is located at second metal layer where underlay substrate in the orthographic projection of plate face, intermediate insulating layer
At least there is climbing portion, and the orthographic projection of climbing portion plate face where underlay substrate is located at overlapping region, this makes intermediate insulation
The film quality in climbing portion possessed by layer is poor to be easy to appear fracture, causes the first metal layer and second metal layer in underlay substrate
Project the risk that overlapping region has short circuit.It, can be by the first metal layer included by least one capacitor and based on this
Two metal layers apply voltage, to test the electricity mutation parameter of at least one capacitor, to be occurred according to electricity mutation parameter
Time or the size of electricity mutation parameter judge to climb possessed by intermediate insulating layer included by least one capacitor
The film quality performance in slope portion.Therefore, film quality detection method provided by the invention can be climbed to possessed by the insulating layer under any environment
Slope portion carries out film quality performance detection, so that operating personnel joins according to the formation process that film quality performance test results adjust insulating layer
Number, to reduce when forming insulating layer to the gold formed prior to insulating layer in the case where guaranteeing the film quality better performances of insulating layer
Belong to the oxidizing intensity of layer.
The present invention also provides a kind of production method of film quality detection device, the preparation method packets of the film quality detection device
It includes:
One underlay substrate is provided；
At least one capacitor is formed on the surface of the underlay substrate, each capacitor includes far from the underlay substrate
The direction the first metal layer, intermediate insulating layer and the second metal layer that are stacked, the first metal layer is in underlay substrate institute
It is located at the second metal layer where underlay substrate in the orthographic projection of plate face in the orthographic projection of plate face, the first metal layer exists
The orthographic projection of plate face where underlay substrate and the orthographic projection of second metal layer plate face where underlay substrate have crossover region
Domain, the intermediate insulating layer at least have climbing portion, and the orthographic projection of climbing portion plate face where underlay substrate is located at described
Overlapping region.
Compared with prior art, the beneficial effect of the preparation method of film quality detection device provided by the invention and above-mentioned technology
The beneficial effect for the film quality detection device that scheme provides is identical, and this will not be repeated here.
The present invention also provides a kind of film quality detection methods, which is characterized in that using described in any one of claim 1~6
Film quality detection device, the film quality detection method include:
Test the electric property curve of at least one capacitor；
According to the electric property curve of each capacitor, the electricity mutation parameter of at least one capacitor is obtained；
According to the electricity mutation parameter of at least one capacitor, the film of intermediate insulating layer included by least one capacitor is judged
Matter performance.
Compared with prior art, described in the beneficial effect and above-mentioned technical proposal of film quality detection method provided by the invention
The beneficial effect of film quality detection device is identical, and this will not be repeated here.
Detailed description of the invention
The drawings described herein are used to provide a further understanding of the present invention, constitutes a part of the invention, this hair
Bright illustrative embodiments and their description are used to explain the present invention, and are not constituted improper limitations of the present invention.In the accompanying drawings:
Fig. 1 is scanning electron microscope (SEM) photograph when existing insulating layer is cracked；
Fig. 2 is the top view of film quality detection device provided in an embodiment of the present invention；
Fig. 3 is the side view of film quality detection device provided in an embodiment of the present invention；
Fig. 4 is the production method flow chart for the film quality detection device that this hair inventive embodiments provide；
Fig. 5 is to form the flow chart of at least one capacitor on the surface of underlay substrate in the embodiment of the present invention；
Fig. 6 is the flow chart of film quality detection method provided in an embodiment of the present invention.
Appended drawing reference:
1- underlay substrate, 10- intermediate insulating layer；
11- the first metal layer, 12- second metal layer；
The first conductive layer of 21-, the second conductive layer of 22-；
C- capacitor.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other
Embodiment shall fall within the protection scope of the present invention.
It is thin that the thin film transistor (TFT) that array substrate included by large scale oxide OLED display contains is generally oxide
Film transistor.The material that active layer included by oxide thin film transistor generally uses be IGZO, ITZO, IGZTO, ZnO,
The semiconductor materials such as ZnON.Insulating layer included by oxide thin film transistor is usually SiO2Or SiNx.When using SiNxProduction
When insulating layer, SiH is used4And NH3Vapor deposition reaction is carried out, to form insulating layer, this makes inside insulating layer containing a large amount of
H causes the stability of oxide thin film transistor by serious influence；Therefore, SiO is generally selected2Make insulating layer.Together
When, consider cost problem, metal layer (such as grid, source-drain electrode) used in oxide thin film transistor generally use Al, Mo,
The metals such as Cu, Ti.In the application of the high-resolution display of large scale, it can make shown by display when resistance drops excessive
Image quality decline, therefore, under the premise of taking into account cost, it is also necessary to using the small metal of resistivity, to reduce metal layer
Resistance drop, is based on this, and generally selection Cu first makes metal layer.It follows that when making oxide thin film transistor, with Cu
As the material of production metal layer, SiO2Material as production insulating layer is to improve large scale oxide OLED display backboard
The optimal selection of characteristic.
The light that light-emitting element array included by the OLED display of existing bottom emitting is issued is gone out by array substrate
It penetrates.And the main component for the underlay substrate that array substrate included by OLED display uses is SiO2, underlay substrate surface institute
The material of insulating layer in the thin film transistor (TFT) array of formation is generally SiNx, but due to SiNxWith SiO2Material property it is poor
It is different bigger, cause light that biggish folding rate occurs when through insulating layer and underlay substrate, so that shown by OLED display
Picture light chromaticity coordinates there is deviation, and then picture shown by OLED display is caused colour cast occur.For this purpose, general use
SiO2Insulating layer is made, SiO is formed2Insulating layer.And in order to improve SiO2The compactness of insulating layer, in production SiO2When insulating layer,
SiO is made in substrate using high-temperature technologies such as chemical vapour deposition techniques2Insulating layer, but if formd in the substrate
Metal electrode made by the Conductivity Ratios higher metal such as Cu, Fe, then these metal electrodes are easily oxidized.Moreover, existing
On the underlay substrate for thering is thin film transistor (TFT) array included by array substrate to be formed in.Each film is brilliant in thin film transistor (TFT) array
SiO is equipped with included by body pipe between grid, source-drain electrode2Insulating layer, and grid and the source-drain electrode plate face where underlay substrate
Orthographic projection, which has, to be overlapped, this makes after formation of the gate, forms SiO far from the surface of underlay substrate in grid2When insulating layer,
SiO2Insulating layer has the climbing portion contacted with the edge of grid or etching position.Due to the edge or etching position of grid
The gradient it is larger so that the edge of grid or etch position the angle of gradient it is steeper, lead to SiO2It is climbed possessed by insulating layer
The film quality in slope portion is than relatively thin and loose, in the case where multiple high temp processing and metal etch corrosion, SiO2Insulating layer is had
Some climbing portions will generate fracture indicated by arrow as shown in figure 1, lead to grid and source-drain electrode short circuit.Therefore, how to adjust
Make SiO2The technique of insulating layer, so that made SiO2While insulating layer has preferable compactness, guarantee metal electrode
The strength reduction being oxidized becomes urgent problem to be solved.
In view of the above-mentioned problems, as shown in Figures 2 and 3, the embodiment of the invention provides a kind of film quality detection devices.The film quality
Detection device includes underlay substrate 1 and at least one capacitor C, each capacitor C that are located on the underlay substrate 1 include far from lining
The first metal layer 11, intermediate insulating layer 10 and the second metal layer 12 that the direction of substrate 1 is stacked.The first metal layer 11 exists
The orthographic projection of 1 place plate face of underlay substrate is located at second metal layer 12 in the orthographic projection of 1 place plate face of underlay substrate, so that the
One metal layer 11 1 place plate face of underlay substrate orthographic projection and second metal layer 12 1 place plate face of underlay substrate positive throwing
Shadow has overlapping region, and the first metal layer 11 is in the area of the orthographic projection of 1 place plate face of underlay substrate less than the second metal at this time
Area of the layer 12 in the orthographic projection of 1 place plate face of underlay substrate.
When concrete application, the first metal layer 11 can be grid or source-drain electrode, but be not limited only to this；Second metal layer 12 can
Think grid or source-drain electrode, but is not limited only to this.
When the first metal layer 11 is grid, second metal layer 12 is source-drain electrode；When the first metal layer 11 is source-drain electrode,
Second metal layer 12 is grid.
Above-mentioned intermediate insulating layer 10 at least has climbing portion.Climbing portion is located in the orthographic projection of 1 place plate face of underlay substrate
Overlapping region.Climbing portion herein refers to that intermediate insulating layer 10 covers the first gold medal of region or covering of 11 side of the first metal layer
Belong to the inner wall area that layer 11 opens up via hole, and in the via hole of the side of either the first metal layer 11 or the first metal layer 11
Wall is all to have certain tilt angle (not embodying in Fig. 2 and Fig. 3) relative to underlay substrate 1, this is also intermediate insulation
The film quality difference reason for it in climbing portion possessed by layer 10.
When climbing portion is cracked, the overlapping position of the projection of the first metal layer 11 and second metal layer 12 has short circuit
Risk.Based on this, can by applying voltage to the first metal layer 11 included by least one capacitor C and second metal layer 12,
To test the electricity mutation parameter of at least one capacitor C, thus according to the time or electricity of the appearance of electricity mutation parameter
The size for learning mutation parameter judges the film quality in climbing portion possessed by intermediate insulating layer 10 included by least one capacitor C
Energy.Therefore, film quality detection method provided in an embodiment of the present invention can to climbing portion possessed by the insulating layer under any environment into
Row film quality performance detection, so that operating personnel adjusts the formation process parameter of insulating layer according to film quality performance test results, with
In the case where guaranteeing the film quality better performances of insulating layer, when reduction forms insulating layer, to the metal layer formed prior to insulating layer
Oxidizing intensity.When the film quality performance of insulating layer is relatively good, illustrate that insulating layer is finer and close, and uniformity is relatively good.
When the film quality performance of insulating layer is poor, illustrate insulating layer than more loose, and uniformity is poor.
Such as: the shape difference of the fan-out area of existing underlay substrate is bigger, almost the fanout area of each underlay substrate
Domain is all different, when this makes the insulating layer film quality performance using existing alignments detection fan-out area, it is difficult to accurate to determine fan
The position of the insulating layer film quality exception in region out.And film quality detection device provided in an embodiment of the present invention can predefine centre absolutely
The formation process of edge layer 10 influences the film quality of intermediate insulating layer 10, therefore, can by test repeatedly obtain film quality it is preferable in
Between insulating layer 10 formation process, do not influenced by the position of insulating layer thus, the preferable insulating layer of film quality be obtained ahead of time and is formed
Technique, and insulating layer is made so as to form technique.
It should be noted that underlay substrate 1 can be shading base in film quality detection device provided in an embodiment of the present invention
Plate, or transparent substrates.For example, when detecting the film quality performance of the insulating layer contained by bottom emitting OLED display, lining
Substrate 1 is transparent substrates.Specifically, underlay substrate 1 can be the quartz glass such as corning glass or Asahi Glass glass, but not only
It is limited to this.The first metal layer 11 and the optional material of second metal layer 12 are relatively more, such as Cu, Fe, Ag or Al, but are not limited only to
This；The optional material of intermediate insulating layer 10 is relatively more, such as SiO2Or SiNxDeng, but it is not limited only to this.In addition, above-mentioned underlay substrate 1
With a thickness of 50 μm -1000 μm, the first metal layer 11 with a thickness of 200nm-1000nm, second metal layer 12 with a thickness of
The thickness of 200nm-1000nm, intermediate insulating layer 10 can be adjusted according to concrete technology.
When in view of carrying out electrochemical property test to single capacitor C, the electric current ratio under breakdown conditions of single capacitor C
It is fainter, need the test equipment high using precision.For this purpose, as shown in Figures 2 and 3, the quantity of above-mentioned capacitor C is multiple
When, multiple capacitor C are connected in parallel, and the electric current of measured capacitor C under breakdown conditions so just will increase, so that surveying
Examination equipment is easier to monitor the electric current under breakdown conditions.Tests prove that the current-voltage of the capacitor C of the multiple parallel connections of test
(I-V) when curve, the electric current very little in climbing portion possessed by above-mentioned intermediate insulating layer 10 is in pico-ampere (pA) or Naan (nA) water
It is flat.When being gradually increased with the voltage for being applied to single capacitor C, the had climbing portion of above-mentioned intermediate insulating layer 10 it is thin
Weak position is easy to happen electrical breakdown, so that short circuit occurs for the position in the first insulating layer 11 and the corresponding climbing portion of second insulating layer 12.
At this point, the I-V curve test of capacitor C becomes the I-V curve test for switching to metal wire resistance.And during transformation, it is tested
Electric current will appear mutation, size of current becomes (microampere) uA even (milliampere) mA rank.Therefore, above-mentioned multiple capacitor C are in parallel
Under state, by carrying out electrical performance testing to the capacitor C of multiple parallel connections, it is easy to judge the capacitor C's of above-mentioned multiple parallel connections
The size of current of breakdown conditions time of occurrence and breakdown conditions.
Specifically, being surveyed under certain condition when testing current -voltage curve (I-V curve) of capacitor C of multiple parallel connections
The size of voltage (referred to as breakdown voltage) corresponding to current break is measured, to judge in included by the capacitor C of multiple parallel connections
Between climbing portion possessed by insulating layer 10 film quality performance.If the film quality performance in climbing portion possessed by intermediate insulating layer 10 compared with
Difference can be changed the formation process of intermediate insulating layer, then remake above-mentioned film quality detection device, survey again under the same conditions
Voltage swing corresponding to current break is measured, to redefine the film quality performance in climbing portion possessed by intermediate insulating layer 10.When
Breakdown voltage is bigger, illustrates the film quality performance in climbing portion possessed by intermediate insulating layer 10 included by the capacitor C of multiple parallel connections
Better.
If the breakdown voltage repeatedly measured is identical, the time that current break occurs when being contemplated that each measurement is early
Evening, the film quality performance to determine climbing portion 10 possessed by intermediate insulating layer included by the film quality detection device measured every time are good
It is bad.When current break time of occurrence is more early, illustrate climbing possessed by intermediate insulating layer 10 included by the capacitor C of multiple parallel connections
The film quality performance in portion is poorer.
When testing capacitance-voltage curves (C-V curve) of multiple shunt capacitance C, capacitor is measured under certain condition
Corresponding voltage (referred to as breakdown voltage) size of amount mutation, with intermediate insulation included by the capacitor C of the multiple parallel connections of determination
The film quality performance in climbing portion possessed by layer 10.If the film quality performance in climbing portion possessed by intermediate insulating layer 10 is poor, can
The formation process for changing intermediate insulating layer 10, then remakes above-mentioned film quality detection device, re-measures under the same conditions
The corresponding voltage swing of capacitance mutation, to redefine the film quality performance in the had climbing portion of intermediate insulating layer 10.When hitting
It wears that voltage is bigger, illustrates that the film quality performance in climbing portion possessed by intermediate insulating layer included by the capacitor C of multiple parallel connections is better.
If the breakdown voltage repeatedly measured is identical, the time that capacitance is mutated when being contemplated that each measurement,
To determine the film quality performance quality in climbing portion possessed by intermediate insulating layer 10 included by the film quality detection device measured every time.
When capacitance mutation time of occurrence it is more early, illustrate to climb possessed by intermediate insulating layer 10 included by the capacitor C of multiple parallel connections
The film quality performance in slope portion is poorer.
In some embodiments, as shown in Figures 2 and 3, the first metal layer 11 included by above-mentioned each capacitor C passes through the
One conductive layer 21 links together.Optionally, the first metal layer 11 included by each capacitor C is connected by the first conductive layer 21
Integrally, so that the first metal layer 11 of the first conductive layer 21 and each capacitor C are formed in a patterning processes.
In some embodiments, as shown in Figures 2 and 3, second metal layer 12 included by each capacitor C is led by second
Electric layer 22 links together；Optionally, second metal layer 12 included by each capacitor C connects into one by the second conductive layer 22
Body, so that the second metal layer 12 of the second conductive layer 22 and each capacitor C are formed in a patterning processes.
In some embodiments, intermediate insulating layer included by above-mentioned each capacitor C links together, to facilitate primary
The production of intermediate insulating layer included by each capacitor C is completed in depositing operation.
Illustratively, the first metal layer 11 included by each capacitor C is linked together by the first conductive layer 21, respectively
When second metal layer 12 included by a capacitor C is linked together by the second conductive layer 22, above-mentioned first conductive layer 21 is being served as a contrast
The orthographic projection of 1 place plate face of substrate is mutually indepedent in the orthographic projection of 1 place plate face of underlay substrate with the second conductive layer 22.
In addition, above-mentioned film quality detection device further includes electrical performance testing unit, electrical performance testing unit is for measuring
One of electrical parameter, such as capacitor, electric current, voltage of at least one capacitor C are a variety of.Electrical performance testing unit can be with
It is determined according to the electric parameters tested.Such as: electrical performance testing unit can be bent for I-V curve tester or C-V
Line tester etc., but not limited to this.I-V curve tester or C-V curve tester have wider voltage change range and compared with
High testing current precision can accurately measure pA or nA grades of electric current, while when electric current reaches mA will not burn out equipment.
The embodiment of the invention also provides a kind of production methods of film quality detection device, as shown in figs 2-4, film quality inspection
Survey device production method include:
Step S110: a underlay substrate 1 is provided.Underlay substrate 1 with a thickness of 50 μm -1000 μm, be of course not solely limited to this.
Step S120: at least one capacitor C is formed on the surface of underlay substrate 1, each capacitor C includes far from substrate
The first metal layer 11, intermediate insulating layer and the second metal layer 12 that the direction of substrate 1 is stacked, the first metal layer 11 is in substrate
The orthographic projection of 1 place plate face of substrate is located at second metal layer 12 in the orthographic projection of 1 place plate face of underlay substrate.The first metal layer
11 have friendship in the orthographic projection of 1 place plate face of underlay substrate in the orthographic projection of 1 place plate face of underlay substrate and second metal layer 12
Folded region, intermediate insulating layer 10 at least have climbing portion.Climbing portion is located at crossover region in the orthographic projection of 1 place plate face of underlay substrate
Domain.
Compared with prior art, the beneficial effect of the production method of film quality detection device provided in an embodiment of the present invention with it is upper
The beneficial effect for stating the film quality detection device of embodiment offer is identical, and this will not be repeated here.
Specifically, the above-mentioned surface in underlay substrate 1 forms at least one capacitor C and includes: as shown in Fig. 2, Fig. 3 and Fig. 5
Step S121: at least one the first metal layer 11 is formed on the surface of underlay substrate 1.
Illustratively, the first gold medal with a thickness of 200nm-1000nm is formed on the surface of underlay substrate 1 using sputtering technology
Belong to film, photoetching and wet etching are successively then carried out to the first metal film, pattern needed for being formed, required pattern includes multiple first metals
Layer 11 and the first conductive layer 21 for connecting multiple the first metal layers 11.During photoetching/wet etching, lithographic opening deviation is considered
Variation, after photoresist lift off, the obtained opening value of wet etching is consistent, so that the size of multiple the first metal layers 11 forms phase
Together.At this point, the first metal layer 11 included by each capacitor C is formed in a patterning processes.
Step S122: it is formed correspondingly at least at least one surface of the first metal layer 11 far from underlay substrate 1
One intermediate insulating layer.
Illustratively, using intermediate insulating layer included by each capacitor C of chemical vapor deposition, at this point, each
Intermediate insulating layer included by capacitor C is connected, and disposably completes the production.It, can as the parameter of chemical vapour deposition technique
It presets, after subsequent film quality detection, preset chemical vapour deposition technique is adjusted according to film quality testing result.
Step S123: at least one is formed correspondingly on surface of at least one intermediate insulating layer far from underlay substrate 1
A second metal layer 12.
Illustratively, the second gold medal with a thickness of 200nm-1000nm is formed on the surface of underlay substrate 1 using sputtering technology
Belong to film, photoetching and wet etching are successively then carried out to the second metal film, pattern needed for being formed, required pattern includes multiple second metals
Layer 12 and the second conductive layer 22 for connecting multiple second metal layers 12.In a photolithographic process, lithographic opening value used in photoetching
Unanimously, so that the size of multiple second metal layers 12 formed it is identical.At this point, second metal layer 12 included by each capacitor C
It is formed in a patterning processes.
As shown in Fig. 2, Fig. 3 and Fig. 6, the embodiment of the invention also provides a kind of film quality detection methods, using above-mentioned film quality
Detection device, the film quality detection method include:
Step S210: the electric property curve of at least one capacitor C is tested；
Step S220: according to the electric property curve of at least one capacitor C, the electricity mutation of at least one capacitor C is obtained
Parameter；
Step S230: according to the electricity mutation parameter of at least one capacitor C, judge in included by least one capacitor C
Between insulating layer film quality performance.
Compared with prior art, the beneficial effect of film quality detection method provided in an embodiment of the present invention is mentioned with above-described embodiment
The beneficial effect of the film quality detection device of confession is identical, and this will not be repeated here.
In addition, multiple capacitor C parallel connections may make above-mentioned electricity mutation parameter ratio when the quantity of above-mentioned capacitor C is multiple
It is easier to be detected, reduces the cost for buying high electrical performance testing unit.
Specifically, when electric property curve is capacitance-voltage curves, electricity mutation parameter is voltage (such as breakdown voltage)
And/or capacitance (capacitance when such as breakdown conditions)；Or,
When electric property curve is current -voltage curve, electricity mutation parameter be voltage (such as breakdown voltage) or electric current (such as
Electric current when breakdown conditions).
In the description of above embodiment, particular features, structures, materials, or characteristics can be at any one or more
It can be combined in any suitable manner in a embodiment or example.
The above description is merely a specific embodiment, but scope of protection of the present invention is not limited thereto, any
Those familiar with the art in the technical scope disclosed by the present invention, can easily think of the change or the replacement, and should all contain
Lid is within protection scope of the present invention.Therefore, protection scope of the present invention should be based on the protection scope of the described claims.
Claims (10)
1. a kind of film quality detection device, which is characterized in that including underlay substrate and be located on the underlay substrate at least one
Capacitor, each capacitor include far from the underlay substrate direction be stacked the first metal layer, intermediate insulating layer and
Second metal layer；The orthographic projection of the first metal layer plate face where underlay substrate is located at the second metal layer in substrate base
Where plate in the orthographic projection of plate face, the first metal layer orthographic projection of plate face and second metal layer where underlay substrate
The orthographic projection of plate face has overlapping region where underlay substrate, and the intermediate insulating layer at least has climbing portion, the climbing
The orthographic projection of portion's plate face where underlay substrate is located at the overlapping region.
2. film quality detection device according to claim 1, which is characterized in that multiple when the quantity of the capacitor is multiple
The capacitor is connected in parallel.
3. film quality detection device according to claim 2, which is characterized in that
The first metal layer included by each capacitor is linked together by the first conductive layer；And/or
Second metal layer included by each capacitor is linked together by the second conductive layer.
4. film quality detection device according to claim 3, which is characterized in that the first gold medal included by each capacitor
Belong to layer to link together by the first conductive layer, second metal layer included by each capacitor is connected by the second conductive layer
When together, first conductive layer where underlay substrate the orthographic projection of plate face and second conductive layer in underlay substrate institute
It is mutually indepedent in the orthographic projection of plate face.
5. film quality detection device according to claim 2, which is characterized in that intermediate insulation included by each capacitor
Layer links together.
6. described in any item film quality detection devices according to claim 1~5, which is characterized in that the film quality detection device is also
Including electrical performance testing unit, the electrical performance testing unit is used to measure the electrical parameter of at least one capacitor.
7. a kind of production method of film quality detection device characterized by comprising
One underlay substrate is provided；
At least one capacitor is formed on the surface of the underlay substrate, each capacitor includes the side far from the underlay substrate
To the first metal layer, intermediate insulating layer and second metal layer being stacked, the first metal layer plate where underlay substrate
The orthographic projection in face is located at the second metal layer in the orthographic projection of plate face, the first metal layer is in substrate where underlay substrate
The orthographic projection of plate face where substrate and the orthographic projection of second metal layer plate face where underlay substrate have overlapping region, institute
Stating intermediate insulating layer at least has climbing portion, and the orthographic projection of climbing portion plate face where underlay substrate is located at the crossover region
Domain.
8. the production method of film quality detection device according to claim 7, which is characterized in that described in the underlay substrate
Surface form at least one capacitor and include:
At least one the first metal layer is formed on the surface of the underlay substrate；
At least one intermediate insulation is formed correspondingly at least one surface of the first metal layer far from underlay substrate
Layer；
At least one second metal layer is formed correspondingly on surface of at least one intermediate insulating layer far from underlay substrate.
9. a kind of film quality detection method, which is characterized in that described using any one of the claim 1~6 film quality detection device
Film quality detection method includes:
Test the electric property curve of at least one capacitor；
According to the electric property curve of at least one capacitor, the electricity mutation parameter of at least one capacitor is obtained；
According to the electricity mutation parameter of at least one capacitor, the film quality of intermediate insulating layer included by least one capacitor is judged
Energy.
10. film quality detection method according to claim 9, which is characterized in that the electric property curve is capacitance-electricity
It buckles line or current -voltage curve.
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