CN106018964B - A kind of electrical parameter detection platform for thin-film material and micro-nano structure - Google Patents
A kind of electrical parameter detection platform for thin-film material and micro-nano structure Download PDFInfo
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- CN106018964B CN106018964B CN201610321924.0A CN201610321924A CN106018964B CN 106018964 B CN106018964 B CN 106018964B CN 201610321924 A CN201610321924 A CN 201610321924A CN 106018964 B CN106018964 B CN 106018964B
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- silicon substrate
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R27/00—Arrangements for measuring resistance, reactance, impedance, or electric characteristics derived therefrom
- G01R27/02—Measuring real or complex resistance, reactance, impedance, or other two-pole characteristics derived therefrom, e.g. time constant
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R27/00—Arrangements for measuring resistance, reactance, impedance, or electric characteristics derived therefrom
- G01R27/02—Measuring real or complex resistance, reactance, impedance, or other two-pole characteristics derived therefrom, e.g. time constant
- G01R27/26—Measuring inductance or capacitance; Measuring quality factor, e.g. by using the resonance method; Measuring loss factor; Measuring dielectric constants ; Measuring impedance or related variables
- G01R27/2617—Measuring dielectric properties, e.g. constants
Abstract
The invention discloses a kind of electrical parameter detection platforms for thin-film material and micro-nano structure, including substrate, the multiple support posts being set on substrate, upper surface, side with preparation in the support post, and the upper surface of substrate, the metal connecting layer that the upper surface of the upper surface and substrate of realizing support post is electrically connected.The present invention supports thin-film material and micro-nano structure to be measured to keep it hanging by the support post being set on substrate, realizes preferable mechanical compressive resistance；Upper surface, side of the preparation in the support post simultaneously, and the upper surface of substrate, the metal connecting layer that the upper surface of the upper surface and substrate of realizing support post is electrically connected forms good Ohmic contact in contact surface, meets the precise measurement of the electrical parameters such as dielectric, piezoelectricity, the capacitance-resistance of thin-film material and micro-nano structure.
Description
Technical field
The present invention relates to a kind of for detecting the electrical parameter detection platform of thin-film material and micro-nano structure, passes through the detection
Platform can be realized the measurement of the electrical parameters such as dielectric, piezoelectricity, the capacitance-resistance of thin-film material and micro-nano structure.
Background technique
When the one-dimensional linear scale of solid or liquid is far smaller than other two dimensions, such solid or liquid are known as film；
In general, film is divided into two classes, one kind is the film that thickness is greater than 1 micron, referred to as thick film；It is another kind of, it is film of the thickness less than 1 micron,
Referred to as film.Evaluation to the electric property of thin-film material and wiener structure is to push thin-film material and micro-nano structure to reality
The basis of application.Since the size of thin-film material and micro-nano structure is smaller, it is not easy to which clamping and operation, the method generallyd use are
By thin-film material and micro-nano structure preparation in substrate, measured with substrate, this method is a degree of to reduce inspection
The difficulty of operation is surveyed, but brings the adverse consequences of measurement result inaccuracy, error information detection is larger.
Therefore, it is correct evaluation thin-film material and the electric property of micro-nano structure, it is easy to operate is badly in need of one kind, and be able to achieve
The detection platform of precise measurement.
Summary of the invention
The purpose of the present invention is to provide it is a kind of can structure it is simple, convenient for operating and can be realized thin-film material and micro-nano
The detection platform of the electrical parameter precise measurement of structure.
The object of the present invention is achieved like this, exists including substrate, the multiple support posts being set on substrate, and preparation
The upper surface of the upper surface of the support post, side and substrate, realizes the upper surface of support post and the upper surface of substrate
The metal connecting layer being electrically connected.
The present invention supports thin-film material and micro-nano structure to be measured to keep it hanging by the support post being set on substrate,
Realize preferable mechanical compressive resistance；It is prepared simultaneously in the upper surface of the upper surface of the support post, side and substrate,
The metal connecting layer that the upper surface of the upper surface and substrate of realizing support post is electrically connected forms good ohm in contact surface
Contact, meets the precise measurement of the electrical parameters such as dielectric, piezoelectricity, the capacitance-resistance of thin-film material and micro-nano structure.
Detailed description of the invention
Fig. 1 is the structural diagram of the present invention；
Fig. 2 is the top view of Fig. 1；
Fig. 3 is schematic diagram of the present invention for the electrical parameter detection platform of thin-film material and micro-nano structure for detection；
In figure: 1- substrate, 2- support post, 3- metal connecting layer, 4, sample to be tested.
Specific embodiment
The present invention will be further described below with reference to the drawings, but must not the present invention is limited in any way,
Based on present invention teach that made any changes and modifications, all belong to the scope of protection of the present invention.
As shown in Figure 1, provided by the present invention for the electrical parameter detection platform of thin-film material and micro-nano structure, including lining
Bottom 1, the multiple support posts 2 being set on substrate 1, and preparation is in the upper surface, side and substrate 1 of the support post 2
Upper surface, realize the upper surface of support post 2 and the metal connecting layer 3 that is electrically connected of upper surface of substrate 1.
The substrate 1 is glass substrate, silicon substrate or germanium substrate.
As shown in Fig. 2, being provided with 5 support posts 2 on the substrate 1.
The support post 2 is made as cylindrical body, cuboid or square using organic matter.
The metal connecting layer 3 is layer gold, platinum layer, nicr layer or titanium tungsten layer, with a thickness of 100nm ~ 200nm.
Embodiment
(1) it cleans silicon substrate: specifically comprising the following steps:
A. it is impregnated silicon substrate 1-2 hours with toluene solution, sufficiently dissolves the organic contaminant for remaining in silicon substrate upper surface；
B. toluene solution is replaced, toluene solution is impregnated into silicon substrate ultrasonic cleaning 3-5 minutes, repeated washing is three times；
C. acetone soln is replaced, acetone soln is impregnated into silicon substrate ultrasonic cleaning 3-5 minutes, repeated washing is three times；
D. ethanol solution is replaced, by ultrasonic cleaning 3-5 minutes of alcohol solution dipping silicon substrate, repeated washing is three times；
F. with the residual liquid for being dried with nitrogen surface of silicon, silicon substrate is then put into baking oven, baking temperature 80-90
DEG C, it toasts 2 hours.
(2) it prepares support post: designed support post pattern is fabricated to lithography mask version, then using traditional light
The gluing of carving technology, exposure, development and etc. form the organic matter support post that 5 height are 20-30 microns on a silicon substrate.
(3) on the silicon substrate for completing step (2), it is vertical in support that 1000 nicr layers are sputtered by the method for magnetron sputtering
The upper surface of the upper surface of column, side and silicon substrate 1 forms metal connecting layer.
As shown in figure 3, thin-film material to be detected or micro-nano structure are placed in detection platform, it is set on substrate
Support post support thin-film material to be measured and micro-nano structure to keep it hanging, realize preferable mechanical compressive resistance；It makes simultaneously
It is standby in the upper surface of the upper surface of the support post, side and substrate, realize support post upper surface and substrate it is upper
The metal connecting layer that surface is electrically connected forms good Ohmic contact in contact surface, meets Jie of thin-film material and micro-nano structure
The precise measurement of the electrical parameters such as electricity, piezoelectricity, capacitance-resistance.
Claims (5)
1. a kind of electrical parameter detection platform for thin-film material and micro-nano structure, it is characterised in that: including substrate (1), set
The multiple support posts (2) being placed on substrate (1), and upper surface, side on the support post (2) are prepared, and lining
The upper surface at bottom (1), the metal connecting layer that the upper surface of the upper surface and substrate (1) of realizing support post (2) is electrically connected
(3)；
The preparation method of the electrical parameter detection platform includes:
The step of cleaning silicon substrate:
A. it is impregnated silicon substrate 1-2 hours with toluene solution, sufficiently dissolves the organic contaminant for remaining in silicon substrate upper surface；
B. toluene solution is replaced, toluene solution is impregnated into silicon substrate ultrasonic cleaning 3-5 minutes, repeated washing is three times；
C. acetone soln is replaced, acetone soln is impregnated into silicon substrate ultrasonic cleaning 3-5 minutes, repeated washing is three times；
D. ethanol solution is replaced, by ultrasonic cleaning 3-5 minutes of alcohol solution dipping silicon substrate, repeated washing is three times；
F. with the residual liquid for being dried with nitrogen surface of silicon, silicon substrate is then put into baking oven, baking temperature is 80-90 DEG C,
Baking 2 hours；
The step of preparing support post: being fabricated to lithography mask version for designed support post pattern, then using traditional light
The step of gluing of carving technology, exposure, development, forms the organic matter support that 5 height are 20-30 micron on a silicon substrate and stands
Column；
On the silicon substrate for completing above-mentioned steps, 1000 nicr layers are sputtered in the upper of support post by the method for magnetron sputtering
The upper surface on surface, side and silicon substrate (1) forms metal connecting layer.
2. the electrical parameter detection platform according to claim 1 for thin-film material and micro-nano structure, it is characterised in that:
The substrate (1) is glass substrate, silicon substrate or germanium substrate.
3. the electrical parameter detection platform according to claim 1 or 2 for thin-film material and micro-nano structure, feature exist
In: 5 support posts (2) are provided on the substrate (1).
4. the electrical parameter detection platform according to claim 3 for thin-film material and micro-nano structure, it is characterised in that:
The support post (2) is made as cylindrical body, cuboid or square using organic matter.
5. the electrical parameter detection platform according to claim 1 for thin-film material and micro-nano structure, it is characterised in that:
The metal connecting layer (3) is layer gold, platinum layer, nicr layer or titanium tungsten layer, with a thickness of 100nm ~ 200nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610321924.0A CN106018964B (en) | 2016-05-16 | 2016-05-16 | A kind of electrical parameter detection platform for thin-film material and micro-nano structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610321924.0A CN106018964B (en) | 2016-05-16 | 2016-05-16 | A kind of electrical parameter detection platform for thin-film material and micro-nano structure |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106018964A CN106018964A (en) | 2016-10-12 |
| CN106018964B true CN106018964B (en) | 2019-02-12 |
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| CN201610321924.0A Active CN106018964B (en) | 2016-05-16 | 2016-05-16 | A kind of electrical parameter detection platform for thin-film material and micro-nano structure |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1834667A (en) * | 2006-03-01 | 2006-09-20 | 浙江大学 | Measurer of dielectric film microwave complex dielectric permittivity |
| JP2011029271A (en) * | 2009-07-22 | 2011-02-10 | Micronics Japan Co Ltd | Thin-film characteristic measuring device and method, and thin-film processing device and method |
| CN102650661A (en) * | 2012-04-27 | 2012-08-29 | 北京京东方光电科技有限公司 | Measurement system for semi-conducting film |
| CN104280678A (en) * | 2014-10-30 | 2015-01-14 | 南通富士通微电子股份有限公司 | Semiconductor testing fixture |
| CN105203849A (en) * | 2015-09-21 | 2015-12-30 | 武汉嘉仪通科技有限公司 | Method and device for accurately determining film-thickness-direction resistivity of film material |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001267242A (en) * | 2000-03-14 | 2001-09-28 | Toyoda Gosei Co Ltd | Group iii nitride-based compound semiconductor and method of manufacturing the same |
-
2016
- 2016-05-16 CN CN201610321924.0A patent/CN106018964B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1834667A (en) * | 2006-03-01 | 2006-09-20 | 浙江大学 | Measurer of dielectric film microwave complex dielectric permittivity |
| JP2011029271A (en) * | 2009-07-22 | 2011-02-10 | Micronics Japan Co Ltd | Thin-film characteristic measuring device and method, and thin-film processing device and method |
| CN102650661A (en) * | 2012-04-27 | 2012-08-29 | 北京京东方光电科技有限公司 | Measurement system for semi-conducting film |
| CN104280678A (en) * | 2014-10-30 | 2015-01-14 | 南通富士通微电子股份有限公司 | Semiconductor testing fixture |
| CN105203849A (en) * | 2015-09-21 | 2015-12-30 | 武汉嘉仪通科技有限公司 | Method and device for accurately determining film-thickness-direction resistivity of film material |
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| CN106018964A (en) | 2016-10-12 |
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