CN106018964A - Electrical parameter detection platform for thin-film material and micro-nano structure - Google Patents
Electrical parameter detection platform for thin-film material and micro-nano structure Download PDFInfo
- Publication number
- CN106018964A CN106018964A CN201610321924.0A CN201610321924A CN106018964A CN 106018964 A CN106018964 A CN 106018964A CN 201610321924 A CN201610321924 A CN 201610321924A CN 106018964 A CN106018964 A CN 106018964A
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- Prior art keywords
- substrate
- thin
- micro
- film material
- nano structure
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
- 239000010409 thin film Substances 0.000 title claims abstract description 27
- 239000000463 material Substances 0.000 title claims abstract description 26
- 239000002086 nanomaterial Substances 0.000 title claims abstract description 25
- 238000001514 detection method Methods 0.000 title claims abstract description 18
- 239000000758 substrate Substances 0.000 claims abstract description 48
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 13
- 229910052710 silicon Inorganic materials 0.000 claims description 13
- 239000010703 silicon Substances 0.000 claims description 13
- 229910052751 metal Inorganic materials 0.000 claims description 9
- 239000002184 metal Substances 0.000 claims description 9
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 3
- 229910052732 germanium Inorganic materials 0.000 claims description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 2
- 239000011521 glass Substances 0.000 claims description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 239000010931 gold Substances 0.000 claims description 2
- 229910052697 platinum Inorganic materials 0.000 claims description 2
- MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 claims description 2
- 238000005259 measurement Methods 0.000 abstract description 6
- 230000006835 compression Effects 0.000 abstract 1
- 238000007906 compression Methods 0.000 abstract 1
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 9
- 239000010408 film Substances 0.000 description 5
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 238000004506 ultrasonic cleaning Methods 0.000 description 3
- 238000005406 washing Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000004026 adhesive bonding Methods 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R27/00—Arrangements for measuring resistance, reactance, impedance, or electric characteristics derived therefrom
- G01R27/02—Measuring real or complex resistance, reactance, impedance, or other two-pole characteristics derived therefrom, e.g. time constant
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R27/00—Arrangements for measuring resistance, reactance, impedance, or electric characteristics derived therefrom
- G01R27/02—Measuring real or complex resistance, reactance, impedance, or other two-pole characteristics derived therefrom, e.g. time constant
- G01R27/26—Measuring inductance or capacitance; Measuring quality factor, e.g. by using the resonance method; Measuring loss factor; Measuring dielectric constants ; Measuring impedance or related variables
- G01R27/2617—Measuring dielectric properties, e.g. constants
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
Abstract
The invention discloses an electrical parameter detection platform for thin-film material and micro-nano structure. The electrical parameter detection platform comprises a substrate, multiple support columns on the substrate, and a metallic connection layer produced on the upper surfaces and side surfaces of the support columns and the upper surface of the substrate to electrically connect the upper surfaces of the support columns to the upper surface of the substrate. The support columns on the substrate support the to-be-tested thin-film material and micro-nano structure in order to suspend the thin-film material and micro-nano structure, thereby achieving good mechanical compression strength. The metallic connection layer produced on the upper surfaces and side surfaces of the support columns and the upper surface of the substrate to electrically connect the upper surfaces of the support columns to the upper surface of the substrate forms good ohmic contact on a contact surface, satisfies the accurate measurement of dielectric, piezoelectric, and capacitance-resistance electrical parameters of the thin-film material and micro-nano structure.
Description
Technical field
The present invention relates to a kind of electrical parameter detection platform for detecting thin-film material and micro-nano structure, be capable of the measurement of the electrical parameter such as thin-film material and the dielectric of micro-nano structure, piezoelectricity, capacitance-resistance by this detection platform.
Background technology
When the one-dimensional linear yardstick of solid or liquid is far smaller than other two dimensions, such solid or liquid are referred to as film；Generally, film is divided into two classes, a class to be the film that thickness is more than 1 micron, referred to as thick film；Another kind of, it is the thickness film that is less than 1 micron, referred to as thin film.To thin-film material and the evaluation of the electric property of wiener structure, it it is the basis that thin-film material and micro-nano structure are pushed to actual application.Owing to the size of thin-film material and micro-nano structure is less, it is not easy clamping and operation, the method generally used is to prepare thin-film material and micro-nano structure in substrate, measure with substrate, the a certain degree of difficulty reducing detection operation of the method, but bringing the inaccurate adverse consequences of measurement result, error information detection is bigger.
Therefore, evaluate thin-film material and the electric property of micro-nano structure for correct, be badly in need of a kind of easy to operate, and the detection platform of accurately measurement can be realized.
Summary of the invention
It is an object of the invention to provide a kind of can simple in construction, convenient to operate and be capable of the detection platform that the electrical parameter of thin-film material and micro-nano structure is accurately measured.
The object of the present invention is achieved like this, including substrate, multiple support posts of being arranged on substrate, with preparation at the upper surface of described support post, side, and the upper surface of substrate, it is achieved the metal connecting layer that the upper surface of support post and the upper surface of substrate are electrically connected.
The present invention supports thin-film material to be measured by the support post being arranged on substrate and micro-nano structure makes it unsettled, it is achieved preferably machinery compressive resistance；Prepare in the upper surface of described support post, side simultaneously, and the upper surface of substrate, the metal connecting layer that the upper surface of the upper surface and substrate that realize support post is electrically connected forms good Ohmic contact at contact surface, meets the accurate measurement of the electrical parameter such as thin-film material and the dielectric of micro-nano structure, piezoelectricity, capacitance-resistance.
Accompanying drawing explanation
Fig. 1 is the structural representation of the present invention；
Fig. 2 is the top view of Fig. 1；
Fig. 3 is that the present invention electrical parameter detection platform for thin-film material and micro-nano structure is for the schematic diagram detected；
In figure: 1-substrate, 2-support post, 3-metal connecting layer, 4, detected sample.
Detailed description of the invention
The present invention is further illustrated below in conjunction with the accompanying drawings, but must not be any limitation as the present invention by any way, based on present invention teach that any change or improvement made, belongs to protection scope of the present invention.
As shown in Figure 1, the electrical parameter detection platform for thin-film material and micro-nano structure that the present invention provides, including substrate 1, multiple support posts 2 of being arranged on substrate 1, with preparation in the upper surface of described support post 2, side, and the upper surface of substrate 1, it is achieved the metal connecting layer 3 that the upper surface of the upper surface of support post 2 and substrate 1 is electrically connected.
Described substrate 1 is glass substrate, silicon substrate or germanium substrate.
As in figure 2 it is shown, be provided with 5 support posts 2 on described substrate 1.
Described support post 2 uses Organic substance to be made as cylinder, cuboid or square.
Described metal connecting layer 3 is layer gold, platinum layer, nicr layer or titanium tungsten layer, and its thickness is 100nm ~ 200nm.
Embodiment
(1) silicon substrate is cleaned: specifically include following steps:
A. soak silicon substrate 1-2 hour with toluene solution, fully dissolve the organic contaminant remaining in silicon substrate upper surface；
B. change toluene solution, toluene solution is soaked silicon substrate ultrasonic cleaning 3-5 minute, repeated washing three times；
C. change acetone soln, acetone soln is soaked silicon substrate ultrasonic cleaning 3-5 minute, repeated washing three times；
D. ethanol solution is changed, by ultrasonic cleaning 3-5 minute of alcohol solution dipping silicon substrate, repeated washing three times；
F. drying up the residual liquid of surface of silicon with nitrogen, then silicon substrate is put into baking oven, baking temperature is 80-90 DEG C, toasts 2 hours.
(2) prepare support post: the support post pattern designed is fabricated to lithography mask version, then use conventional lithography process gluing, expose, the step such as development forms the Organic substance support post that 5 height are 20-30 micron on a silicon substrate.
(3) on the silicon substrate completing step (2), sputter 1000 nicr layers at the upper surface of support post, side, and the upper surface of silicon substrate 1 by the method for magnetron sputtering, form metal connecting layer.
As it is shown on figure 3, thin-film material to be detected or micro-nano structure are positioned in detection platform, the support post being arranged on substrate supports thin-film material to be measured and micro-nano structure makes it unsettled, it is achieved preferably machinery compressive resistance；Prepare in the upper surface of described support post, side simultaneously, and the upper surface of substrate, the metal connecting layer that the upper surface of the upper surface and substrate that realize support post is electrically connected forms good Ohmic contact at contact surface, meets the accurate measurement of the electrical parameter such as thin-film material and the dielectric of micro-nano structure, piezoelectricity, capacitance-resistance.
Claims (5)
1. one kind is used for thin-film material and the electrical parameter detection platform of micro-nano structure, it is characterized in that: the multiple support posts (2) include substrate (1), being arranged on substrate (1), with the upper surface prepared in described support post (2), side, and the upper surface of substrate (1), it is achieved the metal connecting layer (3) that the upper surface of the upper surface of support post (2) and substrate (1) is electrically connected.
Electrical parameter detection platform for thin-film material and micro-nano structure the most according to claim 1, it is characterised in that: described substrate (1) is glass substrate, silicon substrate or germanium substrate.
Electrical parameter detection platform for thin-film material and micro-nano structure the most according to claim 1 and 2, it is characterised in that: it is provided with 5 support posts (2) on described substrate (1).
Electrical parameter detection platform for thin-film material and micro-nano structure the most according to claim 3, it is characterised in that: described support post (2) uses Organic substance to be made as cylinder, cuboid or square.
Electrical parameter detection platform for thin-film material and micro-nano structure the most according to claim 1, it is characterised in that: described metal connecting layer (3) is layer gold, platinum layer, nicr layer or titanium tungsten layer, and its thickness is 100nm ~ 200nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610321924.0A CN106018964B (en) | 2016-05-16 | 2016-05-16 | A kind of electrical parameter detection platform for thin-film material and micro-nano structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610321924.0A CN106018964B (en) | 2016-05-16 | 2016-05-16 | A kind of electrical parameter detection platform for thin-film material and micro-nano structure |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106018964A true CN106018964A (en) | 2016-10-12 |
| CN106018964B CN106018964B (en) | 2019-02-12 |
Family
ID=57097054
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610321924.0A Active CN106018964B (en) | 2016-05-16 | 2016-05-16 | A kind of electrical parameter detection platform for thin-film material and micro-nano structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106018964B (en) |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030162340A1 (en) * | 2000-03-14 | 2003-08-28 | Yuta Tezen | Group III nitride compound semiconductor and method for manufacturing the same |
| CN1834667A (en) * | 2006-03-01 | 2006-09-20 | 浙江大学 | Measurer of dielectric film microwave complex dielectric permittivity |
| JP2011029271A (en) * | 2009-07-22 | 2011-02-10 | Micronics Japan Co Ltd | Thin-film characteristic measuring device and method, and thin-film processing device and method |
| CN102650661A (en) * | 2012-04-27 | 2012-08-29 | 北京京东方光电科技有限公司 | Measurement system for semi-conducting film |
| CN104280678A (en) * | 2014-10-30 | 2015-01-14 | 南通富士通微电子股份有限公司 | Semiconductor testing fixture |
| CN105203849A (en) * | 2015-09-21 | 2015-12-30 | 武汉嘉仪通科技有限公司 | Method and device for accurately determining film-thickness-direction resistivity of film material |
-
2016
- 2016-05-16 CN CN201610321924.0A patent/CN106018964B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030162340A1 (en) * | 2000-03-14 | 2003-08-28 | Yuta Tezen | Group III nitride compound semiconductor and method for manufacturing the same |
| CN1834667A (en) * | 2006-03-01 | 2006-09-20 | 浙江大学 | Measurer of dielectric film microwave complex dielectric permittivity |
| JP2011029271A (en) * | 2009-07-22 | 2011-02-10 | Micronics Japan Co Ltd | Thin-film characteristic measuring device and method, and thin-film processing device and method |
| CN102650661A (en) * | 2012-04-27 | 2012-08-29 | 北京京东方光电科技有限公司 | Measurement system for semi-conducting film |
| CN104280678A (en) * | 2014-10-30 | 2015-01-14 | 南通富士通微电子股份有限公司 | Semiconductor testing fixture |
| CN105203849A (en) * | 2015-09-21 | 2015-12-30 | 武汉嘉仪通科技有限公司 | Method and device for accurately determining film-thickness-direction resistivity of film material |
Also Published As
| Publication number | Publication date |
|---|---|
| CN106018964B (en) | 2019-02-12 |
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