CN110911405A - Anisotropic device, preparation method and application thereof - Google Patents
Anisotropic device, preparation method and application thereof Download PDFInfo
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- 238000002360 preparation method Methods 0.000 title claims abstract description 16
- 239000010409 thin film Substances 0.000 claims abstract description 95
- 239000002120 nanofilm Substances 0.000 claims abstract description 83
- 238000002955 isolation Methods 0.000 claims abstract description 68
- 239000000463 material Substances 0.000 claims abstract description 47
- 230000002093 peripheral effect Effects 0.000 claims description 84
- 238000000034 method Methods 0.000 claims description 30
- 229920002120 photoresistant polymer Polymers 0.000 claims description 21
- 239000013078 crystal Substances 0.000 claims description 19
- 239000004205 dimethyl polysiloxane Substances 0.000 claims description 18
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 claims description 18
- 239000010408 film Substances 0.000 claims description 15
- -1 polydimethylsiloxane Polymers 0.000 claims description 15
- 238000004528 spin coating Methods 0.000 claims description 13
- 239000007772 electrode material Substances 0.000 claims description 11
- 238000000151 deposition Methods 0.000 claims description 10
- 238000003860 storage Methods 0.000 claims description 8
- AKUCEXGLFUSJCD-UHFFFAOYSA-N indium(3+);selenium(2-) Chemical compound [Se-2].[Se-2].[Se-2].[In+3].[In+3] AKUCEXGLFUSJCD-UHFFFAOYSA-N 0.000 claims description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 3
- CTNCAPKYOBYQCX-UHFFFAOYSA-N [P].[As] Chemical compound [P].[As] CTNCAPKYOBYQCX-UHFFFAOYSA-N 0.000 claims description 3
- CUYHGAIVHCHFIA-UHFFFAOYSA-N bis(selanylidene)rhenium Chemical compound [Se]=[Re]=[Se] CUYHGAIVHCHFIA-UHFFFAOYSA-N 0.000 claims description 3
- USWJSZNKYVUTIE-UHFFFAOYSA-N bis(sulfanylidene)rhenium Chemical compound S=[Re]=S USWJSZNKYVUTIE-UHFFFAOYSA-N 0.000 claims description 3
- 238000011161 development Methods 0.000 claims description 3
- 239000002994 raw material Substances 0.000 claims description 2
- 239000011159 matrix material Substances 0.000 claims 2
- 238000001514 detection method Methods 0.000 abstract description 5
- 230000005693 optoelectronics Effects 0.000 abstract description 2
- 239000000523 sample Substances 0.000 description 63
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 58
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 54
- 229910052710 silicon Inorganic materials 0.000 description 54
- 239000010703 silicon Substances 0.000 description 54
- 239000000758 substrate Substances 0.000 description 33
- 235000012239 silicon dioxide Nutrition 0.000 description 29
- 239000000377 silicon dioxide Substances 0.000 description 29
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 28
- 229910052737 gold Inorganic materials 0.000 description 28
- 239000010931 gold Substances 0.000 description 28
- 238000001035 drying Methods 0.000 description 27
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 24
- 238000010438 heat treatment Methods 0.000 description 24
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 23
- 229910052804 chromium Inorganic materials 0.000 description 21
- 239000011651 chromium Substances 0.000 description 21
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 20
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 19
- 238000010894 electron beam technology Methods 0.000 description 11
- 238000009210 therapy by ultrasound Methods 0.000 description 11
- 239000004065 semiconductor Substances 0.000 description 10
- 239000002390 adhesive tape Substances 0.000 description 7
- 238000004140 cleaning Methods 0.000 description 7
- 229910052757 nitrogen Inorganic materials 0.000 description 7
- 238000001704 evaporation Methods 0.000 description 6
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 6
- 239000004926 polymethyl methacrylate Substances 0.000 description 6
- 238000002207 thermal evaporation Methods 0.000 description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- 239000011248 coating agent Substances 0.000 description 5
- 238000000576 coating method Methods 0.000 description 5
- 239000008367 deionised water Substances 0.000 description 5
- 229910021641 deionized water Inorganic materials 0.000 description 5
- 229910001873 dinitrogen Inorganic materials 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000002791 soaking Methods 0.000 description 5
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 3
- 230000008021 deposition Effects 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000009776 industrial production Methods 0.000 description 2
- 230000001788 irregular Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 238000000861 blow drying Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000011056 performance test Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 238000007781 pre-processing Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
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- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B99/00—Subject matter not provided for in other groups of this subclass
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- Thin Film Transistor (AREA)
Abstract
本发明提供了一种各向异性器件，包括基体层、依次层叠在所述基体层上的隔离层和二维纳米薄膜层，二维纳米薄膜层覆盖部分隔离层，还包括中央源电极/中央漏电极及若干周围漏电极/周围源电极；中央源电极/中央漏电极设于二维纳米薄膜层的中部，若干周围漏电极/周围源电极沿中央源电极/中央漏电极的周向设于隔离层上，且若干周围漏电极/周围源电极朝向二维纳米薄膜层延伸至接触二维纳米薄膜层。该各向异性器件可以利用二维纳米薄膜层的各向异性特性，实现材料上不同方向上电流大小的检测，充分利用材料的各向异性，在电子和光电子领域具有巨大的潜在应用。本发明还提供了各向异性器件的制备方法和应用。
The invention provides an anisotropic device, comprising a base layer, an isolation layer and a two-dimensional nano-thin film layer sequentially stacked on the base layer, the two-dimensional nano-thin film layer covers part of the isolation layer, and also includes a central source electrode/center Drain electrode and some surrounding drain electrodes/surrounding source electrodes; the central source electrode/central drain electrode is arranged in the middle of the two-dimensional nano-film layer, and some surrounding drain electrodes/surrounding source electrodes are arranged on the isolation layer along the circumference of the central source electrode/central drain electrode above, and a plurality of surrounding drain electrodes/surrounding source electrodes extend toward the two-dimensional nano-thin film layer to contact the two-dimensional nano-thin film layer. The anisotropic device can utilize the anisotropic properties of the two-dimensional nano-thin film layer to realize the detection of the current magnitude in different directions on the material, and make full use of the anisotropy of the material, which has huge potential applications in the fields of electronics and optoelectronics. The invention also provides the preparation method and application of the anisotropic device.
Description
Technical Field
The invention relates to the field of semiconductor electronic devices, in particular to an anisotropic device and a preparation method and application thereof.
Background
Anisotropy refers to a property in which all or part of chemical and physical properties of a substance change with a change in direction, and the substance exhibits a difference in different directions. Microscopically, the anisotropy of crystals is that the physicochemical properties of crystals in different directions are different due to different orientations of crystal planes in the same crystal. The anisotropy of the crystal is manifested by the difference in the elastic modulus, hardness, fracture resistance, yield strength, thermal expansion coefficient, thermal conductivity, resistivity, electric displacement vector, electric polarization, magnetic susceptibility, refractive index, etc. of the crystal in different directions. Anisotropy is of considerable research interest as an important property of crystals. In recent years, anisotropy has attracted increasing attention, particularly in epitaxial thin film materials.
The III-VI semiconductor material has great potential application in the fields of electronics and optoelectronics due to the special electrical and optical properties. However, the conventional semiconductor electronic device utilizes only one dimensional property of the corresponding material, and does not utilize anisotropy of the material.
Disclosure of Invention
In view of the above, the present invention provides an anisotropic device, and a method for manufacturing the same and an application thereof, the anisotropic device can utilize the anisotropic property of a two-dimensional nano thin film layer material to realize the detection of the magnitude of current in different directions on a material, and the anisotropy of the material is fully utilized, so that the anisotropic device has great potential applications in the fields of electronics and photoelectrons.
In a first aspect, the invention provides an anisotropic device, comprising a substrate layer, an isolation layer and a two-dimensional nano thin film layer, wherein the isolation layer and the two-dimensional nano thin film layer are sequentially stacked on the substrate layer, the two-dimensional nano thin film layer covers a part of the isolation layer, and the anisotropic device further comprises a central source electrode/a central drain electrode and a plurality of peripheral drain electrodes/peripheral source electrodes;
the central source electrode/central drain electrode is arranged in the middle of the two-dimensional nano thin film layer, the plurality of peripheral drain electrodes/peripheral source electrodes are arranged on the isolation layer along the circumferential direction of the central source electrode/central drain electrode, and the plurality of peripheral drain electrodes/peripheral source electrodes extend towards the two-dimensional nano thin film layer to be in contact with the two-dimensional nano thin film layer;
the two-dimensional nano film layer is an anisotropic two-dimensional nano film layer.
In a specific embodiment of the present invention, the two-dimensional nano thin film layer is made of rhenium disulfide, rhenium diselenide, black phosphorus, black arsenic phosphorus, or β -phase indium selenide.
In another embodiment of the present invention, the two-dimensional nano thin film layer is made of two or more materials selected from rhenium disulfide, rhenium diselenide, black phosphorus, black arsenic phosphorus and β -phase indium selenide.
Preferably, the material of the two-dimensional nano film layer is β -phase indium selenide.
Optionally, the two-dimensional nano thin film layer is configured in a disc shape, the central source electrode/central drain electrode is disposed at a center of the two-dimensional nano thin film layer, and the plurality of peripheral drain electrodes/peripheral source electrodes are arranged in a circumferential array along an outer periphery of the two-dimensional nano thin film layer.
Optionally, the number of the plurality of surrounding drain electrodes/surrounding source electrodes is 4 to 36, and the included angle between any two adjacent surrounding drain electrodes/surrounding source electrodes is 10 to 90 °.
Optionally, the central source/drain electrode is spaced from the peripheral drain/source electrode by a distance of 10 μm to 50 μm.
Optionally, the anisotropic device includes a plurality of two-dimensional nano thin film layers stacked on the isolation layer, and a distance between any two adjacent two-dimensional nano thin film layers is 10 μm to 500 μm.
Optionally, the thickness of the two-dimensional nano thin film layer is 2nm-80 nm.
Alternatively, the thickness of each two-dimensional nano-film layer may be the same or different.
Further, optionally, the two-dimensional nano thin film layers may be made of the same material or different materials.
Optionally, the material of the source electrode (specifically, the central source electrode or the peripheral source electrode), the drain electrode (specifically, the central drain electrode or the peripheral drain electrode) includes at least one of chromium and gold; the thickness of the source electrode and the drain electrode is 25nm-90 nm.
Optionally, the resistivity of the substrate layer is 1-10 Ω -cm, and the thickness of the substrate layer is 300-500 μm; the thickness of the isolation layer is 200nm-500 nm.
Optionally, the material of the base layer includes silicon, and the material of the isolation layer includes silicon dioxide.
According to the invention, a back grid semiconductor can be formed based on the two-dimensional nano film layer with anisotropy, and based on the anisotropy of the two-dimensional nano film layer in the aspect of electric conduction, the current distribution characteristics of the two-dimensional nano film layer material in different directions and the like, corresponding information can be edited and stored based on the anisotropy of the material and the difference of the current in different directions; the anisotropic device can provide important detection data for realizing the storage of information in an integrated circuit, and the anisotropic function of the material can be greatly exerted. By ReS2、ReSe2The two-dimensional nano thin film layer prepared from the BP, b-AsP or β -InSe material has outstanding anisotropic characteristics, and particularly the two-dimensional β -InSe nano thin film layer has good semiconductor properties and special anisotropic characteristics.
The anisotropic device of the first aspect of the invention can effectively detect the photoelectric properties of the two-dimensional nano film layer in different directions, and can fully utilize the anisotropic special effect of the two-dimensional nano film layer material; has important significance in the field of anisotropic application of materials.
In a second aspect, the present invention further provides a method for manufacturing an anisotropic device, comprising the following steps:
providing a substrate layer and an isolation layer;
a two-dimensional nano film layer is obtained by adopting a stripping method, and then the two-dimensional nano film layer is transferred onto the isolation layer, wherein the two-dimensional nano film layer is made of a two-dimensional nano film layer with anisotropy;
depositing electrode materials to form a central source electrode/a central drain electrode and a plurality of peripheral drain electrodes/peripheral source electrodes to obtain an anisotropic device;
the central source electrode/central drain electrode is arranged in the middle of the two-dimensional nano thin film layer, the peripheral drain electrodes/peripheral source electrodes are arranged on the isolation layer along the circumferential direction of the central source electrode/central drain electrode, and the peripheral drain electrodes/peripheral source electrodes extend towards the two-dimensional nano thin film layer to be in contact with the two-dimensional nano thin film layer.
Optionally, in the process of depositing the electrode material, a photoresist is spin-coated on the two-dimensional nano thin film layer and the isolation layer not covered by the two-dimensional nano thin film layer, and an electrode pattern is formed after exposure and development;
after depositing the electrode material, the photoresist is then removed to form a central source/drain electrode and a plurality of peripheral drain/peripheral source electrodes.
Optionally, the process of obtaining the two-dimensional nano-film layer by the lift-off method includes: and (3) taking a small amount of single crystal raw materials to be adhered to the adhesive tape, repeatedly tearing for 10-40 times, and transferring the torn two-dimensional nano film sample to the isolation layer to form the two-dimensional nano film layer.
Optionally, the process of transferring the two-dimensional nanofilm sample onto the isolation layer comprises: and transferring the two-dimensional nano film sample to a polydimethylsiloxane film, and then transferring the two-dimensional nano film sample on the polydimethylsiloxane film to an isolation layer.
The preparation method of the second aspect of the invention has simple steps and low cost, and can be used for large-scale industrial production; the prepared anisotropic device can effectively detect the photoelectric properties of the two-dimensional nano film layer in different directions, fully explores the anisotropy of the material, and has great potential application in the fields of electronics and photoelectrons.
In a third aspect, the present invention also provides a use of the anisotropic device according to the first aspect of the present invention in the field of information storage.
The anisotropic device can fully measure the specific characteristics of the anisotropy of the material, such as the current distribution characteristics of the two-dimensional nano film layer material in different directions and the like, and has high potential application value in the fields of optics, electric conduction, heat conduction, magnetic fields and the like. Particularly, based on anisotropic materials, the corresponding information can be edited and stored according to the difference of the current in different directions; the anisotropic device can provide important detection data for realizing the storage of information in an integrated circuit, and the anisotropic function of the material can be greatly exerted.
Advantages of the invention will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of embodiments of the invention.
Drawings
In order to more clearly illustrate the contents of the present invention, a detailed description thereof will be given below with reference to the accompanying drawings and specific embodiments.
FIG. 1 is a schematic structural diagram of an anisotropic device according to an embodiment of the present invention;
FIG. 2 is a schematic structural diagram of an anisotropic device according to another embodiment of the present invention;
FIG. 3 is a schematic diagram of a process flow for manufacturing an anisotropic device according to an embodiment of the present invention;
FIG. 4 is an electrical test chart of the anisotropic device produced in example 1.
Detailed Description
While the following is a description of the preferred embodiments of the present invention, it will be understood by those skilled in the art that various changes and modifications may be made without departing from the spirit and scope of the invention.
Referring to fig. 1, fig. 1 is a schematic diagram illustrating an anisotropic device 100 according to an embodiment of the present invention; the two-dimensional nano film comprises a substrate layer 10, an isolation layer 20 and a two-dimensional nano film layer 30 which are sequentially stacked on the substrate layer 10, wherein the two-dimensional nano film layer 30 covers part of the isolation layer 20, namely the two-dimensional nano film layer 30 only covers part of the isolation layer 20, and the surface of the isolation layer 20 is also provided with a part which is not covered by the two-dimensional nano film layer 30 and is directly exposed. The anisotropic device 100 further comprises a central source electrode 41 and twelve peripheral drain electrodes 42, wherein the central source electrode 41 is disposed in the middle (middle position) of the two-dimensional nano-film layer 30, that is, the central source electrode 41 is completely disposed on the two-dimensional nano-film layer 30, and the central source electrode 41 is not in contact with the isolation layer 20 and the peripheral drain electrodes 42; twelve surrounding drain electrodes 42 are provided on the spacer 20 along the circumferential direction of the central source electrode 41 (disposed around the central source electrode 41), and the twelve surrounding drain electrodes 42 extend toward the two-dimensional nano-thin film layer 30 to contact the two-dimensional nano-thin film layer 30. The two-dimensional nano-thin film layer 30 is a two-dimensional nano-thin film layer having anisotropy. Thus, the central source electrode 41 can be electrically connected to twelve peripheral drain electrodes 42 through the two-dimensional nano-film layer 30. By virtue of the anisotropic property of the two-dimensional nano-film layer 30, the central source electrode 41 and different peripheral drain electrodes 42 have different electrical conductivities, and the anisotropic device can be prepared and applied to the field of detectors by utilizing the property. Based on the anisotropic material, the current in different directions has different magnitudes, and corresponding information can be edited and stored; the anisotropic device can provide important detection data for realizing the storage of information in an integrated circuit, and the anisotropic function of the material can be greatly exerted.
The anisotropic device provided by another embodiment of the present invention has a similar structure to the anisotropic device 100, and the only difference is that the central source electrode 41 is provided as a central drain electrode, and twelve peripheral drain electrodes 42 are provided as twelve peripheral source electrodes, and the working principle is the same, and the anisotropic device has the same anisotropy. Hereinafter, the specific structure and parameters of the anisotropic device are described in detail by taking the anisotropic device 100 as an example, the specific structure and parameters of the central source electrode 41 of the anisotropic device 100 according to the present embodiment are also applicable to the central drain electrode of the anisotropic device according to another embodiment, and the specific structure and parameters of the peripheral drain electrode 42 of the anisotropic device 100 according to the present embodiment are also applicable to the peripheral source electrode of the anisotropic device according to another embodiment.
In the embodiment of the present invention, the two-dimensional nano thin film layer 30 can be, but is not limited to, a two-dimensional β -InSe nano thin film layer, or a two-dimensional ReS2A nano-film layer, or two-dimensional ReSe2The nano-thin film layer is either a two-dimensional BP nano-thin film layer or a two-dimensional b-AsP nano-thin film layer, or the two-dimensional nano-thin film layer 30 can be, but is not limited to, a two-dimensional β -InSe nano-thin film, a two-dimensional ReS2Nano thin film, two-dimensional ReSe2The mixed thin film layer composed of the nano thin film, the two-dimensional BP nano thin film and the two-dimensional b-AsP nano thin film can also ensure that the prepared two-dimensional nano thin film layer 30 has anisotropic characteristics, and more preferably, the two-dimensional nano thin film layer 30 is a two-dimensional β -InSe nano thin film layer, wherein the thickness of the two-dimensional nano thin film layer 30 is 2nm-80 nm.
Further, the thickness of the two-dimensional nano film layer 30 is 10nm to 50 nm.
Further, the thickness of the two-dimensional nano film layer 30 is 50nm to 80 nm.
For example, in one embodiment of the present invention, the thickness of the two-dimensional nano thin film layer 30 is 2nm, or 5nm, or 10nm, or 20nm, or 30nm, or 35nm, or 45nm, or 50nm, or 60nm, or 70nm, or 80 nm.
Further, the two-dimensional nano thin film layer 30 is configured into a disk shape, the central source electrode 41 is disposed at the center of the two-dimensional nano thin film layer 30, and the peripheral drain electrodes 42 are arranged in a circumferential array along the outer periphery of the two-dimensional nano thin film layer 30, that is, as shown in fig. 1, the peripheral drain electrodes 42 are radially distributed on the outer periphery of the two-dimensional nano thin film layer 30 in a centrosymmetric manner, the peripheral drain electrodes 42 extend from the two-dimensional nano thin film layer 30 to the isolation layer 20, and the distances between any two adjacent peripheral drain electrodes 42 are. Thus, the distances from the peripheral drain electrodes 42 to the central source electrode 41 are equal, and the two-dimensional nano thin film layer 30 is located only in different directions, that is, the conductivity between the peripheral drain electrodes 42 and the central source electrode 41 is characterized by the anisotropy of the two-dimensional nano thin film layer 30. In other embodiments, the distances from the peripheral drain electrodes 42 to the central source electrode 41 may not be equal, and the two-dimensional nano thin film layer may be further configured into an oval shape, a polygon shape, a star shape, or an irregular shape, so that only the conductance characteristics between the peripheral drain electrodes 42 and the central source electrode 41 are different in each direction, and the two-dimensional nano thin film layer can be also applied to the field of detectors and the field of information editing and storage.
Optionally, the length and width dimensions of the two-dimensional nano-film layer 30 are 15 μm to 80 μm.
Further optionally, the length and width dimensions of the two-dimensional nano-film layer 30 are 20 μm to 50 μm.
For example, in one embodiment of the present invention, the length and width dimensions of the two-dimensional nano thin film layer are 15 μm, or 20 μm, or 30 μm, or 40 μm, or 50 μm, or 60 μm, or 70 μm, or 80 μm.
In the embodiment of the present invention, the material of the base layer 10 includes silicon. Further, optionally, the base layer 10 is p-type or n-type doped silicon.
Optionally, the thickness of the base layer 10 is 300 μm to 500 μm.
Further, optionally, the thickness of the base layer 10 is 400 μm to 500 μm.
Wherein the resistivity of the substrate layer 10 is 1-10 Ω · cm.
In the embodiment of the present invention, the material of the isolation layer 20 includes silicon dioxide. Optionally, the thickness of the isolation layer 20 is 200nm-500 nm.
Further, optionally, the thickness of the isolation layer 20 is 300nm-500 nm.
For example, in one embodiment of the present invention, the thickness of the isolation layer 20 is 200nm, or 250nm, or 300nm, or 350nm, or 400nm, or 450nm, or 500 nm.
Alternatively, the number of the surrounding drain electrodes 42 is 4 to 36, and the included angle between any two adjacent surrounding drain electrodes 42 is 10 to 90 °. For example, in the present embodiment, the number of the peripheral drain electrodes 42 is 12, and the included angle between any two adjacent peripheral drain electrodes 42 is 30 °.
Optionally, the material of the central source electrode 41 and the peripheral drain electrode 42 includes at least one of chromium and gold; the thickness of the central source electrode 41 and the peripheral drain electrode 42 is 25nm to 90 nm.
Optionally, the thickness of the central source electrode 41 and the peripheral drain electrode 42 is 25nm to 50 nm.
Optionally, the thickness of the central source electrode 41 and the peripheral drain electrode 42 is 50nm to 90 nm.
For example, in one embodiment of the present invention, the thickness of the central source electrode 41 and the peripheral drain electrode 42 is 25nm, or 30nm, or 35nm, or 40nm, or 50nm, or 60nm, or 70nm, or 80nm, or 90 nm.
In the embodiment of the present invention, the material of the central source electrode 41 and the peripheral drain electrode 42 includes at least one of gold and chromium. In this embodiment, the material of the central source electrode 41 and the material of the peripheral drain electrode 42 may be the same or different.
Alternatively, the cross-sectional shape of the surrounding drain electrode 42 may be, but is not limited to, rectangular, circular, triangular, or polygonal.
For example, in the present embodiment, the cross-sectional shape of the peripheral drain electrode 42 is rectangular.
In this embodiment, in order to ensure that the distances from the central source electrode 41 to the peripheral drain electrodes 42 are equal, the conductance between the central source electrode 41 and the peripheral drain electrodes 42 is ensured to be affected only by the direction angle. A disk-shaped central source electrode 41 is adopted, and the central source electrode 41 is arranged at the center of the two-dimensional nano film layer 30. Preferably, as shown in fig. 1, the central source electrode 41 may also extend radially beyond the respective peripheral drain electrode 42 with electrode legs in order to highlight the conductivity characteristics of the anisotropic device 100. In other embodiments, the central source electrode 41 may also be arranged in a regular dodecagon, and any corner of the regular dodecagon central source electrode 41 directly faces one of the peripheral drain electrodes 42, which also ensures that the distances from the central source electrode 41 to the peripheral drain electrodes 42 are equal.
In other embodiments, the distances from the peripheral drain electrodes 42 to the central source electrode 41 may not be equal, and the central source electrode 41 may be disposed in an oval shape, a polygonal shape, a star shape, or an irregular shape, so as to ensure that the conductivity characteristics between the peripheral drain electrodes 42 and the central source electrode 41 are different according to the change of the direction angle.
For example, in an embodiment of the present invention, the central source electrode 41 and the peripheral drain electrode 42 are composed of a chromium layer and a gold layer sequentially stacked on the two-dimensional nano thin film layer 30, wherein the thickness of the chromium layer is 5nm to 10nm, and the thickness of the gold layer is 20nm to 80 nm. The central source electrode 41 and the peripheral drain electrode 42, which are composed of the chrome layer and the gold layer, have more excellent electrochemical performance, and can maintain good contact with the two-dimensional nano-thin film layer 30.
In an embodiment of the present invention, the central source electrode 41 and the peripheral drain electrode 42 may include a chromium layer and a gold layer at the same time; and a portion of the surrounding drain electrode 42 is in contact with the two-dimensional nano-thin film layer 30 and another portion is in contact with the isolation layer 20.
In this embodiment, the anisotropic device includes N peripheral drain electrodes 42, where N is a positive integer greater than or equal to 4. Further, the number of N may be less than 20.
Alternatively, the included angle between any two adjacent surrounding drain electrodes 42 may be other angles a.
Optionally, the distance between the central source electrode 41 and the peripheral drain electrode 42 is 10 μm to 50 μm. In this embodiment, the distance between the central source electrode 41 and the peripheral drain electrode 42 is the distance between the proximal end of the peripheral drain electrode 42 and the center of the disk-shaped central source electrode 41.
In the embodiment of the present invention, the material of the two-dimensional nano-film layer 30 is selected from the group consisting of ReS2、ReSe2The two-dimensional nano thin film layer 30 has good semiconductor properties and special anisotropy, but the anisotropy is in the same crystal, and the crystal planes are oriented differently, so that the physicochemical characteristics of the crystal in different directions are differentBy utilizing the anisotropic property of the two-dimensional nano film layer material, the material can have huge potential application in the fields of electronics and photoelectrons.
A second aspect of the present invention provides a method for manufacturing an anisotropic device, as shown in fig. 3, comprising the steps of:
s01, providing a substrate layer, and arranging an isolation layer on the substrate layer, or providing the substrate layer provided with the isolation layer;
s02, obtaining a two-dimensional nano film layer by adopting a stripping method, and transferring the two-dimensional nano film layer to the isolation layer;
s03, spin-coating photoresist on the two-dimensional nano thin film layer and the isolation layer not covered by the two-dimensional nano thin film layer, and forming an electrode pattern after exposure and development;
s04, depositing electrode materials, removing the photoresist, and forming a peripheral drain electrode and a central source electrode which are laid on the two-dimensional nano thin film layer and are distributed radially, wherein the central source electrode is arranged in the middle of the two-dimensional nano thin film layer, the peripheral drain electrode is arranged on the isolation layer along the circumferential direction of the central source electrode, and the peripheral drain electrode extends towards the two-dimensional nano thin film layer to be in contact with the two-dimensional nano thin film layer. Then cleaning to obtain the anisotropic device.
In an embodiment of the present invention, in step S01, the substrate layer and the isolation layer may be both cut into 1 × 1cm pieces by slicing a commercial standard 4-inch p-type or n-type doped single-polished silicon oxide wafer (including a silicon portion having a thickness of 300 μm-500 μm and a resistivity of 1-10 Ω -cm and a silicon dioxide portion having a thickness of 300nm) into pieces with a silicon blade knife2Size of the product. The base layer and isolation layer may also be a silicon dioxide isolation layer laminated on a p-type or n-type doped silicon layer.
Optionally, after the isolation layer is arranged and before the two-dimensional nano thin film layer is transferred, preprocessing the substrate layer and the isolation layer; the pretreatment process comprises the following steps: and sequentially putting the obtained substrate layer containing the isolation layer into an acetone solution and an alcohol solution for ultrasonic treatment for 5-15 minutes respectively, then transferring the substrate layer into deionized water for ultrasonic treatment for 5-15 minutes, and quickly drying the substrate layer by using high-purity nitrogen for later use. The alcohol solution includes at least one of an ethanol solution or an isopropanol solution.
In the embodiment of the invention, in step S02, the process of obtaining the two-dimensional nano thin film layer by the lift-off method includes taking a small amount of single crystal material (e.g., β -InSe single crystal), adhering the single crystal material to an adhesive tape (e.g., Scotch tape), repeatedly tearing the single crystal material for 10-40 times, transferring the torn two-dimensional nano thin film sample to a Polydimethylsiloxane (PDMS) thin film 50 (as shown in fig. 3), and transferring the two-dimensional nano thin film sample on the PDMS thin film 50 to the isolation layer.
In the embodiment of the invention, a plurality of two-dimensional nano film samples can be obtained by repeatedly tearing for 10-40 times, and at least one two-dimensional nano film sample can be transferred onto the isolation layer through the PDMS film. For example, a plurality of two-dimensional nano-film samples can be distributed on the separation layer at intervals, so as to obtain a plurality of two-dimensional nano-film layers distributed on the separation layer at intervals.
In the embodiment of the present invention, in step S04, a layer of Photoresist (PMMA) is spin-coated over the two-dimensional nano thin film layer and over the isolation layer not covered by the two-dimensional nano thin film layer; then drying on a heating plate for 1-5 minutes at 50-180 ℃, wherein the rotation speed of the spin coating is 2000-4000 revolutions per minute. And exposing the sample coated with the photoresist by electron beams, and obtaining a specific electrode pattern through a developing process. In the embodiment of the present invention, the electrode pattern includes a plurality of pairs of through holes penetrating through the photoresist and exposing a portion of the two-dimensional nano-thin film layer.
In the embodiment of the invention, the central source electrode and the peripheral drain electrode in various types of arrangement can be correspondingly obtained by designing the electrode pattern in advance. For example, as shown in fig. 1, the plurality of peripheral drain electrodes are radially distributed on the two-dimensional nano thin film layer, and the included angle between two adjacent peripheral drain electrodes is different.
Optionally, a plurality of two-dimensional nano-film layers 30 arranged at intervals may be further stacked on the isolation layer. The distance L between any two adjacent two-dimensional nanometer thin film layers is 10-500 mu m, and the reference is made to figure 2.
Alternatively, the cross-sectional shape of the through-hole may be, but is not limited to, a rectangle, a circle, a triangle, or a polygon.
Optionally, the photoresist model may be, but is not limited to, 950 (A4-A10).
In the embodiment of the present invention, in step S04, an electrode material is deposited over the through holes, and the electrode material fills the through holes and contacts the light absorption layer to form a plurality of peripheral drain electrodes and a plurality of central source electrodes.
Alternatively, the deposition is performed by thermal evaporation, magnetron sputtering, or the like. For example, in one embodiment of the present invention, the source and drain electrodes are formed by depositing a chrome layer with a thickness of 5-10nm and then depositing a gold layer with a thickness of 20-80 nm.
Optionally, after the deposition of the electrode material, the step of immersing the sample with the deposited electrode material in an acetone organic solvent for removing the photoresist, and heating the sample on a heating plate for 10 to 30 minutes, wherein the temperature of the heating plate is set to be 30 to 50 ℃, and finally taking out the sample and rapidly drying the sample by using high-purity nitrogen for cleaning treatment.
Alternatively, after the anisotropic device is prepared, a semiconductor characteristic analyzer can be used for carrying out related performance tests on the anisotropic device.
In this embodiment, a schematic view of a manufacturing process of the anisotropic device can be seen in fig. 3.
The preparation method of the second aspect of the invention has simple steps and low cost, and can be used for large-scale industrial production; the prepared anisotropic device can effectively detect the photoelectric properties of the anisotropy of the two-dimensional nano film layer in different directions, and has important significance in the preparation of anisotropic photoelectric devices, anisotropic detectors and information storage applications.
Example 1
A preparation method of an anisotropic device based on a two-dimensional β -InSe nano thin film comprises the following steps:
(1) cleaning a silicon wafer; a commercial 4 inch standard single-polished silicon wafer doped with p-type or n-type (silicon portion thickness 300A) was polished with a silicon bladeμ m-500 μm, resistivity of 1-10 Ω · cm, thickness of silicon dioxide of 300nm) into pieces of 1 × 1cm2Respectively carrying out ultrasonic treatment on the silicon substrate layer and the silicon dioxide isolation layer for 5min by using an acetone solution and isopropanol, then carrying out ultrasonic treatment on the silicon substrate layer and the isopropanol for 5min by using deionized water, and rapidly drying the silicon substrate layer and the silicon dioxide isolation layer for later use by using high-purity nitrogen gas to obtain the silicon substrate layer and the silicon dioxide isolation layer which are laminated together.
(2) Preparing a sample, adhering a small amount of β -InSe single crystals to a Scotch adhesive tape, repeatedly tearing for 10-20 times, transferring the torn β -InSe nano film sample to a polydimethylsiloxane film, and transferring the β -InSe nano film sample on the polydimethylsiloxane film to the silicon dioxide isolating layer in the step (1).
(3) Spin coating and drying; and spin-coating a layer of photoresist PMMA (A4) on the surface of the silicon wafer at the rotating speed of 3000 r/min, and drying on a heating plate for 5min at the drying temperature of 120 ℃.
(4) Exposing and developing by electron beams; and exposing the sample coated with the photoresist by electron beams, and obtaining a specific electrode pattern through a developing process.
(5) Coating; and (3) evaporating 10nm of chromium and 80nm of gold sequentially by a thermal evaporation method to prepare a chromium/gold central source electrode and peripheral drain electrodes, wherein the peripheral drain electrodes are arranged in a circumferential array relative to the center of the two-dimensional nano film layer.
(6) And (3) removing gold, soaking a sample of which the chromium/gold central source electrode and the peripheral drain electrode are evaporated in acetone, placing the sample on a heating plate, heating for 10-30 minutes, setting the temperature of the heating plate to be within 30-50 ℃, finally taking out the sample, and quickly drying the sample by using high-purity nitrogen to obtain the anisotropic device based on the two-dimensional β -InSe nano film.
Example 2
Based on two dimension ReSe2The preparation method of the anisotropic device of the nano film comprises the following steps:
(1) cleaning a silicon wafer; a commercial standard 4 inch single polished silicon wafer doped with p-type or n-type silicon (silicon portion thickness 300 μm-500 μm, resistivity 1-10. omega. cm, silicon dioxide thickness 300nm) was cut into 1X 1cm pieces with a silicon blade knife2Respectively performing ultrasonic treatment on the mixture for 5min by acetone solution and isopropanol, and then performing de-ionizationUltrasonically treating with water for 5min, and rapidly blow-drying with high-purity nitrogen gas for later use to obtain laminated silicon substrate layer and silicon dioxide isolation layer.
(2) Preparing a sample; taking a small amount of ReSe2And (3) adhering the single crystal to the Scotch adhesive tape, repeatedly tearing for 10-20 times, transferring the torn sample to the polydimethylsiloxane film, and transferring the sample on the polydimethylsiloxane film to the silicon dioxide isolating layer in the step (1).
(3) Spin coating and drying; and spin-coating a layer of photoresist PMMA (A4) on the surface of the silicon wafer at the rotating speed of 3000 r/min, and drying on a heating plate for 5min at the drying temperature of 120 ℃.
(4) Exposing and developing by electron beams; and exposing the sample coated with the photoresist by electron beams, and obtaining a specific electrode pattern through a developing process.
(5) Coating; and (3) evaporating 10nm of chromium and 80nm of gold sequentially by a thermal evaporation method to prepare a chromium/gold central source electrode and peripheral drain electrodes, wherein the peripheral drain electrodes are arranged in a circumferential array relative to the center of the two-dimensional nano film layer.
(6) Removing gold; soaking a sample of which the chromium/gold central source electrode and the peripheral drain electrode are evaporated in acetone, placing the sample on a heating plate, heating for 10-30 minutes, setting the temperature of the heating plate to be within 30-50 ℃, finally taking out the sample, and quickly drying the sample by using high-purity nitrogen to obtain the product based on two-dimensional ReSe2Anisotropic devices of nano-films.
Example 3
Based on two-dimentional Rees2The preparation method of the anisotropic device of the nano film comprises the following steps:
(1) cleaning a silicon wafer; a commercial standard 4 inch single polished silicon wafer doped with p-type or n-type silicon (silicon portion thickness 300 μm-500 μm, resistivity 1-10. omega. cm, silicon dioxide thickness 300nm) was cut into 1X 1cm pieces with a silicon blade knife2Respectively carrying out ultrasonic treatment on the silicon substrate layer and the silicon dioxide isolation layer for 5min by using an acetone solution and isopropanol, then carrying out ultrasonic treatment on the silicon substrate layer and the isopropanol for 5min by using deionized water, and rapidly drying the silicon substrate layer and the silicon dioxide isolation layer for later use by using high-purity nitrogen gas to obtain the silicon substrate layer and the silicon dioxide isolation layer which are laminated together.
(2) Preparing a sample; taking a small amount of ReS2And (3) adhering the single crystal to the Scotch adhesive tape, repeatedly tearing for 10-20 times, transferring the torn sample to the polydimethylsiloxane film, and transferring the sample on the polydimethylsiloxane film to the silicon dioxide isolating layer in the step (1).
(3) Spin coating and drying; and spin-coating a layer of photoresist PMMA (A4) on the surface of the silicon wafer at the rotating speed of 3000 r/min, and drying on a heating plate for 5min at the drying temperature of 120 ℃.
(4) Exposing and developing by electron beams; and exposing the sample coated with the photoresist by electron beams, and obtaining a specific electrode pattern through a developing process.
(5) Coating; and (3) evaporating 10nm of chromium and 80nm of gold sequentially by a thermal evaporation method to prepare a chromium/gold central source electrode and peripheral drain electrodes, wherein the peripheral drain electrodes are arranged in a circumferential array relative to the center of the two-dimensional nano film layer.
(6) Removing gold; soaking a sample of which the chromium/gold central source electrode and the peripheral drain electrode are evaporated in acetone, placing the sample on a heating plate, heating for 10-30 minutes, setting the temperature of the heating plate to be within 30-50 ℃, finally taking out the sample, and quickly drying the sample by using high-purity nitrogen to obtain the two-dimensional ReS-based sample2Anisotropic devices of nano-films.
Example 4
A preparation method of an anisotropic device based on a two-dimensional b-AsP nano film comprises the following steps:
(1) cleaning a silicon wafer; a commercial standard 4 inch single polished silicon wafer doped with p-type or n-type silicon (silicon portion thickness 300 μm-500 μm, resistivity 1-10. omega. cm, silicon dioxide thickness 300nm) was cut into 1X 1cm pieces with a silicon blade knife2Respectively carrying out ultrasonic treatment on the silicon substrate layer and the silicon dioxide isolation layer for 5min by using an acetone solution and isopropanol, then carrying out ultrasonic treatment on the silicon substrate layer and the isopropanol for 5min by using deionized water, and rapidly drying the silicon substrate layer and the silicon dioxide isolation layer for later use by using high-purity nitrogen gas to obtain the silicon substrate layer and the silicon dioxide isolation layer which are laminated together.
(2) Preparing a sample; and (2) sticking a small amount of b-AsP material on the Scotch adhesive tape, repeatedly tearing for 10-20 times, transferring the torn sample to a polydimethylsiloxane film, and transferring the b-AsP nano film sample on the polydimethylsiloxane film to the silicon dioxide isolating layer in the step (1).
(3) Spin coating and drying; and spin-coating a layer of photoresist PMMA (A4) on the surface of the silicon wafer at the rotating speed of 3000 r/min, and drying on a heating plate for 5min at the drying temperature of 120 ℃.
(4) Exposing and developing by electron beams; and exposing the sample coated with the photoresist by electron beams, and obtaining a specific electrode pattern through a developing process.
(5) Coating; and (3) evaporating 10nm of chromium and 80nm of gold sequentially by a thermal evaporation method to prepare a chromium/gold central source electrode and peripheral drain electrodes, wherein the peripheral drain electrodes are arranged in a circumferential array relative to the center of the two-dimensional nano film layer.
(6) Removing gold; and (3) soaking the sample with the chromium/gold central source electrode and the peripheral drain electrode in acetone, placing the sample on a heating plate, heating for 10-30 minutes, setting the temperature of the heating plate to be within 30-50 ℃, finally taking out the sample, and quickly drying the sample by using high-purity nitrogen to obtain the anisotropic device based on the two-dimensional b-AsP nano film.
Example 5
A preparation method of an anisotropic device based on a two-dimensional BP nano film comprises the following steps:
(1) cleaning a silicon wafer; a commercial standard 4 inch single polished silicon wafer doped with p-type or n-type silicon (silicon portion thickness 300 μm-500 μm, resistivity 1-10. omega. cm, silicon dioxide thickness 300nm) was cut into 1X 1cm pieces with a silicon blade knife2Respectively carrying out ultrasonic treatment on the silicon substrate layer and the silicon dioxide isolation layer for 5min by using an acetone solution and isopropanol, then carrying out ultrasonic treatment on the silicon substrate layer and the isopropanol for 5min by using deionized water, and rapidly drying the silicon substrate layer and the silicon dioxide isolation layer for later use by using high-purity nitrogen gas to obtain the silicon substrate layer and the silicon dioxide isolation layer which are laminated together.
(2) Preparing a sample; and (2) sticking a small amount of BP material on the Scotch adhesive tape, repeatedly tearing for 10-20 times, transferring the torn sample to the polydimethylsiloxane film, and transferring the BP nano film sample on the polydimethylsiloxane film to the silicon dioxide isolating layer in the step (1).
(3) Spin coating and drying; and spin-coating a layer of photoresist PMMA (A4) on the surface of the silicon wafer at the rotating speed of 3000 r/min, and drying on a heating plate for 5min at the drying temperature of 120 ℃.
(4) Exposing and developing by electron beams; and exposing the sample coated with the photoresist by electron beams, and obtaining a specific electrode pattern through a developing process.
(5) Coating; and (3) evaporating 10nm of chromium and 80nm of gold sequentially by a thermal evaporation method to prepare a chromium/gold central source electrode and peripheral drain electrodes, wherein the peripheral drain electrodes are arranged in a circumferential array relative to the center of the two-dimensional nano film layer.
(6) Removing gold; and (3) soaking the sample with the chromium/gold central source electrode and the peripheral drain electrode which are subjected to evaporation plating in acetone, placing the sample on a heating plate, heating for 10-30 minutes, setting the temperature of the heating plate to be within 30-50 ℃, finally taking out the sample, and quickly drying the sample by using high-purity nitrogen to obtain the anisotropic device based on the two-dimensional BP nano film.
Effect embodiment:
a two-dimensional β -InSe based test method for detecting transport anisotropy, the method comprising the steps of:
(1) the anisotropic device fabricated in example 1 was used to scribe a silicon dioxide spacer layer in one corner of a silicon wafer using a silicon blade knife.
(2) The semiconductor characteristic analyzer is placed on a probe platform matched with the semiconductor characteristic analyzer, and the accurate position of a device on a silicon chip is found through a matched CCD imaging system.
(3) Firstly, the chamber of the probe platform for placing the sample is vacuumized, and when the vacuum degree reaches 5 multiplied by 10-2And (3) during Torr, selecting two probes matched with a probe station, contacting one probe with a central source electrode of the device, contacting the other probe with different peripheral drain electrodes, and contacting the other probe with the silicon dioxide isolation layer cut in the step (1) to be used as a back gate electrode with anisotropic characteristics.
(4) And opening the test software of the semiconductor characteristic analyzer, selecting a voltage scanning mode by the drain probe, setting the scanning range to be-1V-1V, setting the grid voltage to be 0V and setting the source voltage to be 0V.
(5) And running test software to obtain an electrical test chart of the device.
(6) And adjusting the probe to measure the devices in the directions of 0 degrees, 30 degrees, 60 degrees, 90 degrees, 120 degrees, 150 degrees, 180 degrees, 210 degrees, 240 degrees, 270 degrees, 300 degrees, 330 degrees and 360 degrees, and respectively obtaining an electrical test chart of the device, and taking the electrical test chart as shown in figure 4.
As can be seen in FIG. 4, the different source-drain voltages (V)ds) Each curve is a result of measuring current values in directions of 0, 30, 60, 90, 120, 150, 180, 210, 240, 270, 300, 330 and 360 degrees and then obtaining the result through function fitting, the content of the graph in FIG. 4 can specifically reflect the difference of the current magnitude of materials in different directions, thereby showing the function of the anisotropic device, and the integrated circuit with the information storage function can be designed or manufactured by obtaining the difference of the current magnitude in different directions based on the two-dimensional β -InSe nanometer thin film layer, which has great practical value.
The above-mentioned embodiments only express several embodiments of the present invention, and the description thereof is more specific and detailed, but not construed as limiting the scope of the present invention. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the inventive concept, which falls within the scope of the present invention. Therefore, the protection scope of the present patent shall be subject to the appended claims.
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