CN107863402A - A kind of near infrared photodetector and preparation method thereof - Google Patents
A kind of near infrared photodetector and preparation method thereof Download PDFInfo
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- CN107863402A CN107863402A CN201711070851.3A CN201711070851A CN107863402A CN 107863402 A CN107863402 A CN 107863402A CN 201711070851 A CN201711070851 A CN 201711070851A CN 107863402 A CN107863402 A CN 107863402A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 16
- 239000002060 nanoflake Substances 0.000 claims abstract description 46
- 238000000926 separation method Methods 0.000 claims abstract description 29
- 239000000758 substrate Substances 0.000 claims abstract description 27
- 239000000463 material Substances 0.000 claims abstract description 19
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 17
- 239000002390 adhesive tape Substances 0.000 claims abstract description 12
- 239000013078 crystal Substances 0.000 claims abstract description 11
- 238000004528 spin coating Methods 0.000 claims abstract description 10
- 239000007772 electrode material Substances 0.000 claims abstract description 7
- 238000000151 deposition Methods 0.000 claims abstract description 6
- 230000008021 deposition Effects 0.000 claims abstract description 6
- 239000003960 organic solvent Substances 0.000 claims abstract description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 44
- 239000010703 silicon Substances 0.000 claims description 44
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 35
- 239000010931 gold Substances 0.000 claims description 24
- 229910052737 gold Inorganic materials 0.000 claims description 24
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 23
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 23
- 239000000377 silicon dioxide Substances 0.000 claims description 19
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
- 239000002096 quantum dot Substances 0.000 claims description 5
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- 239000004411 aluminium Substances 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 239000011651 chromium Substances 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 239000010936 titanium Substances 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- 240000007594 Oryza sativa Species 0.000 claims 1
- 235000007164 Oryza sativa Nutrition 0.000 claims 1
- 150000001336 alkenes Chemical class 0.000 claims 1
- 229910002804 graphite Inorganic materials 0.000 claims 1
- 239000010439 graphite Substances 0.000 claims 1
- 235000009566 rice Nutrition 0.000 claims 1
- 230000007613 environmental effect Effects 0.000 abstract description 11
- 230000004043 responsiveness Effects 0.000 abstract description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 43
- 239000000523 sample Substances 0.000 description 28
- 238000000034 method Methods 0.000 description 20
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 16
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 16
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 14
- 239000004065 semiconductor Substances 0.000 description 12
- 238000012360 testing method Methods 0.000 description 11
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 8
- 229910052757 nitrogen Inorganic materials 0.000 description 8
- 235000012239 silicon dioxide Nutrition 0.000 description 7
- 238000002604 ultrasonography Methods 0.000 description 7
- 238000010894 electron beam technology Methods 0.000 description 6
- 238000001514 detection method Methods 0.000 description 5
- 238000004140 cleaning Methods 0.000 description 4
- 238000011161 development Methods 0.000 description 4
- 238000001035 drying Methods 0.000 description 4
- 238000001704 evaporation Methods 0.000 description 4
- 230000008020 evaporation Effects 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 4
- 239000004926 polymethyl methacrylate Substances 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 229910052681 coesite Inorganic materials 0.000 description 3
- 229910052906 cristobalite Inorganic materials 0.000 description 3
- 239000008367 deionised water Substances 0.000 description 3
- 229910021641 deionized water Inorganic materials 0.000 description 3
- 125000000118 dimethyl group Chemical group [H]C([H])([H])* 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 229920005573 silicon-containing polymer Polymers 0.000 description 3
- 229910052682 stishovite Inorganic materials 0.000 description 3
- 229910052905 tridymite Inorganic materials 0.000 description 3
- 230000007547 defect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910021389 graphene Inorganic materials 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 238000010998 test method Methods 0.000 description 2
- 241000790917 Dioxys <bee> Species 0.000 description 1
- -1 Radical siloxane Chemical class 0.000 description 1
- 229910003978 SiClx Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000005375 photometry Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000013112 stability test Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
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- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
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- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
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Abstract
The invention provides a kind of near infrared photodetector, including：Substrate, set gradually separation layer on the surface of the substrate and light absorbing layer and be arranged on the relative both ends of light absorbing layer and the source electrode contacted respectively with light absorbing layer and drain electrode, the channel structure formed between source electrode and drain electrode exposes part light absorbing layer, and the material of light absorbing layer includes β InSe nano flakes.The photodetector has very high near infrared light responsiveness and environmental stability.Present invention also offers a kind of preparation method of near infrared photodetector, including：β InSe single crystal ingots are provided, β InSe single crystal ingots is adhered on adhesive tape, repeatedly tear tape 10 20 times, obtains β InSe nano flakes, β InSe nano flakes are transferred on separation layer, form light absorbing layer；Above β InSe nano flakes and not by spin coating photoresist above the separation layer of β InSe nano flakes covering, after exposed and developed, electrode pattern is formed；Deposition of electrode material, organic solvent stripping photoresist is then used, form source electrode and drain electrode.
Description
Technical field
The present invention relates to field of photodetectors, and in particular to a kind of near infrared photodetector and preparation method thereof.
Background technology
Photodetector is a kind of light-detecting device made of the photoconductive effect using semi-conducting material.So-called photoconduction
Effect, refer to a kind of physical phenomenon changed by radiation-induced illuminated material electric conductivity.Photodetector is widely used, contains
The military every field with national economy of lid, such as it is mainly used in radionetric survey and detection, industry in visible ray and near infrared band
Automatically control, Photometric Measurement etc..Scientific research at present and field of industrial production are formed efficiently using New Two Dimensional material semiconductor
Photodetector is just in fast development.
III-VI semi-conducting materials in electronics and optoelectronic areas due to special electrical and optical performance, having huge
Big potential application.In these semiconductors, InSe is a kind of important layered semiconductor, and its photodetection scope can be from
Light has high photoelectric respone near infrared band, but the γ-InSe reported at present are at ambient conditions easily by oxygen
Change, this greatly limits its application.
The content of the invention
To solve the above problems, the invention provides a kind of near infrared photodetector and preparation method thereof.The present invention carries
The near infrared photodetector of confession has very high near infrared light responsiveness, while has good environmental stability.
First aspect present invention provides near infrared photodetector, including：Substrate, it is successively set on the substrate surface
On separation layer and light absorbing layer and be arranged on the relative both ends of the light absorbing layer and contacted respectively with the light absorbing layer
Source electrode and drain electrode, the channel structure formed between the source electrode and the drain electrode exposes the part light absorbing layer, described
The material of light absorbing layer includes β-InSe nano flakes.
Wherein, the thickness of the light absorbing layer is 2-20nm.
Wherein, the thickness of the light absorbing layer is 5-10nm.
Wherein, the light absorbing layer exposed between the source electrode and the drain electrode is along perpendicular to the source electrode and the drain electrode
The length of bearing of trend is 1-10 μm, is 1-15 μm along the width parallel to the source electrode and the drain electrode bearing of trend.
Wherein, the length of the light absorbing layer exposed between the source electrode and the drain electrode is 3 μm, and width is 10 μm.
Wherein, the material of the substrate is silicon, and the thickness of the substrate is 300-500 μm, and resistivity is 1-10 Ω cm；
The material of the separation layer is silica, and the thickness of the separation layer is 200-500nm.
Wherein, graphene layer, nano metal layer or quantum dot layer are additionally provided with the light absorbing layer.
Wherein, the source electrode and the material of drain electrode are at least one of gold, titanium, aluminium, chromium, tungsten and nickel.
Wherein, the source electrode and drain electrode are by layers of chrome and layer gold to be laminated the combination electrode formed, wherein, the layers of chrome with
The light absorbing layer contact, the thickness of the layers of chrome is 5-10nm, and the thickness of the layer gold is 20-80nm.
First aspect present invention provide near infrared photodetector while with very high near infrared light responsiveness,
With good environmental stability.This shows that the detector can be continual and steady in non-cryogenic, antivacuum air ambient
Work.The process for the device packaging protection for having to carry out the problems such as in order to prevent two-dimensional material from aoxidizing can be saved, is device
The actual production use of part significantly simplify manufacturing procedure, while obtained panel detector structure is simple.
Second aspect of the present invention provides a kind of preparation method of near infrared photodetector, comprises the following steps：
The separation layer of substrate and setting on the substrate is provided；
There is provided β-InSe single crystal ingots, β-InSe single crystal ingots are adhered on adhesive tape, tear tape 10-20 times repeatedly, obtain β-
InSe nano flakes, then obtained β-InSe nano flakes are transferred on organic film, then by the organic film
β-InSe nano flakes are transferred on the separation layer, form light absorbing layer；
Do not revolved above the β-InSe nano flakes and above the separation layer of β-InSe nano flakes covering
Resist coating, after exposed and developed, form electrode pattern；
Deposition of electrode material, organic solvent stripping photoresist is then used, form source electrode and drain electrode.
The preparation method technique of photodetector provided in an embodiment of the present invention is simple to operation.It is obtained to have well
Environmental stability, while the photodetector has high optical responsivity, great practical value.
To sum up, beneficial effect of the present invention includes the following aspects：
1st, near infrared photodetector provided in an embodiment of the present invention, using β-InSe nano flakes as semiconductor material
Material, environmental stability are good, it is not easy to are oxidized, solve the defects of existing semi-conducting material γ-InSe are present.What is obtained is near
Infrared photoelectric detector has good environmental stability while with very high near infrared light responsiveness.
2nd, the preparation method technique of near infrared photodetector provided in an embodiment of the present invention is simple to operation.
Brief description of the drawings
Fig. 1 is the structural representation for the near infrared photodetector that embodiment of the present invention provides；
Fig. 2 is the preparation method schematic diagram for the near infrared photodetector that embodiment of the present invention provides；
Fig. 3 is the preparation method flow chart for the near infrared photodetector that embodiment of the present invention provides；
Fig. 4 is the environmental stability test result for the near infrared photodetector that embodiment of the present invention provides；
Fig. 5 is that the near infrared photodetector that embodiment of the present invention provides carries out photodetection test result.
Embodiment
As described below is the preferred embodiment of the present invention, it is noted that for those skilled in the art
For, under the premise without departing from the principles of the invention, some improvements and modifications can also be made, these improvements and modifications are also considered as
Protection scope of the present invention.
Fig. 1 is refer to, first aspect of the embodiment of the present invention provides a kind of near infrared photodetector 10, including：Substrate
1st, the separation layer 2 of the substrate surface is arranged on, the light absorbing layer 3 on the surface of separation layer 2 is arranged on, is arranged on the light suction
Receive the relative both ends of layer 3 and the source electrode 4 that contact respectively with the light absorbing layer 3 and drain 5, the source electrode 4 and it is described drain 5 it
Between light absorbing layer 3, the material of the light absorbing layer 3 described in the channel structure expose portion that is formed include β-InSe nano flakes.
In the embodiment of the present invention, the number of plies of the β-InSe nano flakes is less than or equal to 25 layers.Alternatively, the β-
The number of plies of InSe nano flakes is 2-25 layers.Still optionally further, the number of plies of the β-InSe nano flakes is 2-10 layers.
In the embodiment of the present invention, the thickness of the light absorbing layer 3 is 2-20nm.Alternatively, the thickness of the light absorbing layer 3
For 5-10nm.
In the embodiment of the present invention, graphene layer, nano metal layer or quantum dot layer can also be set on the light absorbing layer 3
To form hetero-junctions, to effectively improve the performance of photodetector.Alternatively, the nano metal can be selected from Au, Ag or Al
Deng.Alternatively, metallic nanodots array is set on the light absorbing layer surface.Alternatively, the quantum dot includes PbS or SnSe
Deng.Alternatively, the quantum dot is spin-coated on the light absorbing layer surface and forms hetero-junctions.
In the embodiment of the present invention, the β-InSe nano flakes are obtained from β-InSe single crystal ingots by the method for tear tape
's.
In the embodiment of the present invention, the material of the substrate 1 is silicon, and the thickness of the substrate 1 is 300-500 μm, resistivity
For 1-10 Ω cm.Alternatively, the substrate 1 is the silicon chip that p-type or n-type are adulterated.
In the embodiment of the present invention, the material of the separation layer 2 is silica, and the thickness of the separation layer 2 is 200-
500nm。
In the embodiment of the present invention, the material of the source electrode 4 and drain electrode 5 is at least one in gold, titanium, aluminium, chromium, tungsten and nickel
Kind.Alternatively, the source electrode 4 and drain electrode 5 are by layers of chrome and layer gold to be laminated the combination electrode formed, wherein, the layers of chrome with
The light absorbing layer contact, the thickness of the layers of chrome is 5-10nm, and the thickness of the layer gold is 20-80nm.The source electrode 4 and institute
State the connection external power source of drain electrode 5.Alternatively, the source electrode 4 and the drain electrode 5 are realized with the light absorbing layer 3 and contacted, extremely
Particular determination is not done in the area of contact.Alternatively, the source electrode 4 and the part in the drain electrode 5 and the light absorbing layer 3
Part contacts, and another part contacts with the separation layer 2.
It refer to Fig. 1, in the embodiment of the present invention, the light absorbing layer that is exposed between the source electrode and the drain electrode is along vertical
It it is 1-10 μm in the length L of the source electrode and the drain electrode bearing of trend, edge is parallel to the source electrode and the drain electrode extension side
To width W be 1-15 μm.Under the conditions of the length and width, obtained spot detector is functional.Alternatively, it is described
The length L of the light absorbing layer exposed between source electrode and the drain electrode is 3 μm, and width W is 10 μm.
In the embodiment of the present invention, the photodetector can realize effective detection near infrared light, alternatively, described
Photodetector can realize the detection to the near infrared light that wavelength is 780-980nm.
The near infrared photodetector that first aspect of the embodiment of the present invention provides, it is used as using β-InSe nano flakes and is partly led
Body material, environmental stability are good, it is not easy to are oxidized, solve the defects of existing semi-conducting material γ-InSe are present.Obtain
Photodetector while with very high near infrared light responsiveness, there is good environmental stability.This shows described
Detector can be continual and steady in non-cryogenic, antivacuum air ambient work.It can save to prevent two-dimensional material
The problems such as oxidation, has to the process of the device packaging protection carried out, and processing is significantly simplify for the actual production use of device
Process, while obtained panel detector structure is simple.
Reference picture 2 and Fig. 3, the embodiment of the present invention additionally provide a kind of preparation method of near infrared photodetector, including
Following steps：
S01, provide substrate 1 and the separation layer 2 being arranged in the substrate 1；
S02, provide β-InSe single crystal ingots, β-InSe single crystal ingots are adhered on adhesive tape, torn 10-20 times repeatedly, obtain β-
InSe nano flakes 31, then obtained β-InSe nano flakes 31 are transferred on organic film 6, then by the organic film
β-InSe nano flakes 31 on 6 are transferred on the separation layer 2, form light absorbing layer 3；
S03, above the β-InSe nano flakes 31 and the isolation that is not covered by the β-InSe nano flakes 31
2 top spin coating photoresist 7 of layer, after exposed and developed, form electrode pattern 8；
S04, deposition of electrode material, organic solvent stripping photoresist is then used, form source electrode 4 and drain electrode 5.
In the embodiment of the present invention, in step S01, there is provided p-type or the silicon chip with silicon dioxide layer of n-type doping, it is described
Silicon chip includes two layers, respectively silicon dioxide layer and silicon layer, and the thickness of the silicon layer is 300-500 μm, resistivity 1-10
Ω cm, the silicon dioxide layer thickness are 200-500nm.Wherein, the silicon layer is made as substrate 1, the silicon dioxide layer
For separation layer 2.Specifically, with silicon chip knife by business with 4 inches of p-types of standard or n-type adulterate it is single throw oxidized silicon chip be cut into 1 ×
1cm2Size, obtain silicon chip to be used.
In the embodiment of the present invention, also include the operation cleaned to the silicon chip in step S01, the cleaning according to
Lower method operation：
Silicon chip to be used is passed sequentially through into acetone soln, isopropanol (or being ethanol) ultrasonic 3-5 minutes, then spend respectively
Ionized water ultrasound 3-8min, and quickly dried up with high pure nitrogen stand-by.
In the embodiment of the present invention, in step S02, the adhesive tape is Scotch adhesive tapes.The organic film 6 includes poly- diformazan
Radical siloxane (PDMS) film.Less β-InSe the thin slices of thinner thickness, the number of plies can be obtained by the method for tear tape, simultaneously
This method is simple to operation.
In the embodiment of the present invention, in step S02, the β-InSe single crystal ingots are made in accordance with the following methods：
By In sources and Se sources using mol ratio as 1:1 mixing, the method that thermograde is then used in the range of 400-800 DEG C
β-InSe the single crystal ingots are made.
In the embodiment of the present invention, in step S03, above the β-InSe thin slices 31 and not by the β-InSe thin slices
31 covering 2 top spin coating of separation layer, one layer of photoresist 7 (PMMA) (model 950, A4-A10), rotating speed be 2000-4000 turn/
Minute, and 1-5 minutes are dried on hot plate, drying temperature is 50-180 degrees Celsius.The sample for scribbling photoresist is subjected to electronics
Beam exposes, and obtains specific electrode pattern 8 by developing process.The electrode pattern 8 is to penetrate the photoresist and exposure
Go out two through holes of the part β-InSe thin slices.
In the embodiment of the present invention, in step S04, deposition of electrode material, the electrode material are carried out above the through hole
Fill the through hole and be in contact with the β-InSe thin slices, form source electrode 4 and drain electrode 5.Alternatively, hot evaporation or magnetic control are passed through
The methods of sputtering, is deposited.Alternatively, the gold of the layers of chrome 9, then redeposited 20-80nm thickness of 5-10nm thickness is deposited first
Layer 10 is to form combination electrode.After deposition terminates, the sample that chrome gold electrode has been deposited is put into acetone and other organic solvent and soaked
Steep and be used for stripping photoresist, and place and heat 10-30 minutes on hot plate, it is Celsius to be arranged to 30-50 for wherein temperature of heating plate
Degree, finally take out sample and quickly dried up with high pure nitrogen.
The preparation method technique of near infrared photodetector provided in an embodiment of the present invention is simple to operation.It is obtained to have
Good environmental stability, while the photodetector has high optical responsivity, great practical value.
Embodiment 1：
A kind of near infrared photodetector, including silicon substrate, silica separation layer and the β-InSe nanometers stacked gradually
Thin slice, it is arranged on the both ends that β-InSe nano flakes are oppositely arranged and the source electrode contacted respectively with β-InSe nano flakes and leakage
Pole, the channel structure formed between source electrode and drain electrode expose part β-InSe nano flakes.The thickness of silicon substrate is 300 μm,
The thickness of silica separation layer is 300nm, and the thickness of β-InSe nano flakes is 10nm, and source electrode and drain electrode are respectively 5nm thick
Layers of chrome and the thick layer gold of 40nm be laminated the combination electrode to be formed.
A kind of preparation method of near infrared photodetector, comprises the following steps：
(1) cleaning silicon chip；Single throwing oxidized silicon chip (the silicon portion for being adulterated business 4 inches of p-types of standard or n-type with silicon chip knife
The thickness divided is 300 μm, and resistivity is 1-10 Ω cm, SiO2Partial thickness is 300nm) it is cut into 1 × 1cm2Size, pass through
Acetone soln, isopropanol (isopropanol can also use ethanol to substitute) ultrasound 5 minutes, then respectively with deionized water ultrasound 5min simultaneously
Quickly dried up with high pure nitrogen stand-by.
(2) β-InSe nano flakes are prepared；Take a small amount of β-InSe monocrystalline to adhere on adhesive tape (such as Scotch adhesive tapes), tear repeatedly
10-20 times, obtain the β-InSe nano flakes that thickness is 10nm.The sample torn is transferred to dimethyl silicone polymer again
(PDMS) on film, finally the sample on PDMS film is transferred on the stand-by silicon chip cleaned up in step (1).
(3) spin coating is dried；In above-mentioned one layer of photoresist PMMA (A4) of silicon chip surface spin coating, rotating speed is 3000 revs/min, and
Dry 5 minutes on hot plate, drying temperature is 120 degrees Celsius.
(4) electron beam exposure, development；The sample for scribbling photoresist is subjected to electron beam exposure, and obtained by developing process
To specific electrode pattern.
(5) plated film；The thick layers of chrome of 5nm and the thick layer gold of 40nm are successively deposited by the method for hot evaporation, formed source electrode and
Drain electrode.
(6) gold is removed；The sample that chrome gold electrode has been deposited is put into acetone and soaked, and places and heats 10 on hot plate
Minute, wherein temperature of heating plate is arranged to 50 degrees Celsius, finally takes out sample and is quickly dried up with high pure nitrogen.
Embodiment 2：
A kind of near infrared photodetector, including silicon substrate, silica separation layer and the β-InSe nanometers stacked gradually
Thin slice, it is arranged on the both ends that β-InSe nano flakes are oppositely arranged and the source electrode contacted respectively with β-InSe nano flakes and leakage
Pole, the channel structure formed between source electrode and drain electrode expose part β-InSe nano flakes.The thickness of silicon substrate is 500 μm,
The thickness of silica separation layer is 500nm, and the thickness of β-InSe nano flakes is 5nm, and source electrode and drain electrode are respectively 10nm thick
Layers of chrome and the thick layer gold of 80nm be laminated the combination electrode to be formed.
A kind of preparation method of near infrared photodetector, comprises the following steps：
(1) cleaning silicon chip；Single throwing oxidized silicon chip (the silicon portion for being adulterated business 4 inches of p-types of standard or n-type with silicon chip knife
The thickness divided is 500 μm, and resistivity is 1-10 Ω cm, SiO2Partial thickness is 500nm) it is cut into 1 × 1cm2Size, pass through
Acetone soln, isopropanol (isopropanol can also use ethanol to substitute) ultrasound 5 minutes, then respectively with deionized water ultrasound 3min simultaneously
Quickly dried up with high pure nitrogen stand-by.
(2) β-InSe nano flakes are prepared；Take a small amount of β-InSe monocrystalline to adhere on adhesive tape (such as Scotch adhesive tapes), tear repeatedly
10-20 times, obtain the β-InSe nano flakes that thickness is 5nm.The sample torn is transferred to dimethyl silicone polymer again
(PDMS) on film, finally the sample on PDMS film is transferred on the stand-by silicon chip cleaned up in step (1).
(3) spin coating is dried；In above-mentioned one layer of photoresist PMMA (A4) of silicon chip surface spin coating, rotating speed is 2000 revs/min, and
Dry 1 minute on hot plate, drying temperature is 180 degrees Celsius.
(4) electron beam exposure, development；The sample for scribbling photoresist is subjected to electron beam exposure, and obtained by developing process
To specific electrode pattern.
(5) plated film；The thick layers of chrome of 10nm and the thick layer gold of 80nm are successively deposited by the method for hot evaporation, formed source electrode and
Drain electrode.
(6) gold is removed；The sample that chrome gold electrode has been deposited is put into acetone and soaked, and places and heats 30 on hot plate
Minute, wherein temperature of heating plate is arranged to 30 degrees Celsius, finally takes out sample and is quickly dried up with high pure nitrogen.
Embodiment 3：
A kind of near infrared photodetector, including silicon substrate, silica separation layer and the β-InSe nanometers stacked gradually
Thin slice, it is arranged on the both ends that β-InSe nano flakes are oppositely arranged and the source electrode contacted respectively with β-InSe nano flakes and leakage
Pole, the channel structure formed between source electrode and drain electrode expose part β-InSe nano flakes.The thickness of silicon substrate is 400 μm,
The thickness of silica separation layer is 200nm, and the thickness of β-InSe nano flakes is 2nm, and source electrode and drain electrode are respectively 10nm thick
Layers of chrome and the thick layer gold of 80nm be laminated the combination electrode to be formed.
A kind of preparation method of near infrared photodetector, comprises the following steps：
(1) cleaning silicon chip；Single throwing oxidized silicon chip (the silicon portion for being adulterated business 4 inches of p-types of standard or n-type with silicon chip knife
The thickness divided is 400 μm, and resistivity is 1-10 Ω cm, SiO2Partial thickness is 200nm) it is cut into 1 × 1cm2Size, pass through
Acetone soln, isopropanol (isopropanol can also use ethanol to substitute) ultrasound 5 minutes, then respectively with deionized water ultrasound 8min simultaneously
Quickly dried up with high pure nitrogen stand-by.
(2) β-InSe nano flakes are prepared；Take a small amount of β-InSe monocrystalline to adhere on adhesive tape (such as Scotch adhesive tapes), tear repeatedly
10-20 times, obtain the β-InSe nano flakes that thickness is 2nm.The sample torn is transferred to dimethyl silicone polymer again
(PDMS) on film, finally the sample on PDMS film is transferred on the stand-by silicon chip cleaned up in step (1).
(3) spin coating is dried；In above-mentioned one layer of photoresist PMMA (A4) of silicon chip surface spin coating, rotating speed is 2000 revs/min, and
Dry 5 minutes on hot plate, drying temperature is 50 degrees Celsius.
(4) electron beam exposure, development；The sample for scribbling photoresist is subjected to electron beam exposure, and obtained by developing process
To specific electrode pattern.
(5) plated film；The thick layers of chrome of 7nm and the thick layer gold of 20nm are successively deposited by the method for hot evaporation, formed source electrode and
Drain electrode.
(6) gold is removed；The sample that chrome gold electrode has been deposited is put into acetone and soaked, and places and heats 20 on hot plate
Minute, wherein temperature of heating plate is arranged to 40 degrees Celsius, finally takes out sample and is quickly dried up with high pure nitrogen.
Embodiment 4：
Near infrared photodetector made from embodiment 1 is carried out to the test of electrical stability, method of testing includes following
Step：
(1) near infrared photodetector made in Example 1, dioxy is scratched at an angle of silicon chip with silicon chip knife
SiClx layer.
(2) place it on the supporting probe platform of characteristic of semiconductor analyzer, found by supporting CCD imaging systems
The accurate location of detector on silicon chip.
(3) two supporting probes of probe station are chosen and are respectively contacted the source of detector, drain electrode, another probe is chosen and connects
The silicon dioxide layer scratched in step (1) is touched, as the back-gate electrode of detector.
(4) open characteristic of semiconductor analyzer test software, grid probe selection voltage scanning pattern, scanning range for-
60V-60V, setting drain voltage are 1V, source voltage 0V.
(5) testing results software, the electrical testing figure of detector is obtained.
(6) detector is respectively placed in air ambient after 2 days, 4 days, 6 days, 8 days, 10 days and repeats above-mentioned test, finally
Obtain the electrical testing result figure of Fig. 4 ambient stable.
Embodiment 5：
By made from embodiment 1 near infrared photodetector carry out near infrared light detection test, method of testing include with
Lower step：
(1) photodetector is made in Example 1, silicon dioxide layer is scratched at an angle of silicon chip with silicon chip knife.
(2) place it on the supporting probe platform of characteristic of semiconductor analyzer, found by supporting CCD imaging systems
The accurate location of detector on silicon chip.
(3) two supporting probes of probe station are chosen and are respectively contacted the source of detector, drain electrode, another probe is chosen and connects
The silicon dioxide layer scratched in step (1) is touched, as the back-gate electrode of detector.
(4) open characteristic of semiconductor analyzer test software, drain electrode probe selection voltage scanning pattern, scanning range for-
3V-3V, setting source voltage are 0V, grid voltage 0V.
(5) testing results software, detector electrical testing figure under no light condition is obtained.
(5) 800nm laser is introduced, vertical irradiation is on the novel photoelectric-detection device based on β-InSe.
(6) in laser power it is respectively 2.20mW/cm2、12.0mW/cm2、44.6mW/cm2、94.2mW/cm2、
168.0mW/cm2、255.0mW/cm2Under conditions of testing results software, the detector for respectively obtaining Fig. 5 corresponds to and different incident swashs
The electrical testing figure of luminous power.
From Fig. 4 and Fig. 5 as can be seen that near infrared photodetector made from the embodiment of the present invention have it is higher near red
Outer optical responsivity, while there is good environmental stability.
Embodiment described above only expresses the several embodiments of the present invention, and its description is more specific and detailed, but simultaneously
Therefore the limitation to the scope of the claims of the present invention can not be interpreted as.It should be pointed out that for one of ordinary skill in the art
For, without departing from the inventive concept of the premise, various modifications and improvements can be made, these belong to the guarantor of the present invention
Protect scope.Therefore, the protection domain of patent of the present invention should be determined by the appended claims.
Claims (10)
- A kind of 1. near infrared photodetector, it is characterised in that including：Substrate, be successively set on the substrate surface every Absciss layer and light absorbing layer and it is arranged on the relative both ends of the light absorbing layer and the source electrode contacted respectively with the light absorbing layer And drain electrode, the channel structure formed between the source electrode and the drain electrode expose the part light absorbing layer, the light absorbs The material of layer includes β-InSe nano flakes.
- 2. near infrared photodetector as claimed in claim 1, it is characterised in that the thickness of the light absorbing layer is 2- 20nm。
- 3. near infrared photodetector as claimed in claim 2, it is characterised in that the thickness of the light absorbing layer is 5- 10nm。
- 4. near infrared photodetector as claimed in claim 1, it is characterised in that exposure between the source electrode and the drain electrode The light absorbing layer gone out is 1-10 μm along the length perpendicular to the source electrode and the drain electrode bearing of trend, along parallel to the source electrode Width with the drain electrode bearing of trend is 1-15 μm.
- 5. near infrared photodetector as claimed in claim 4, it is characterised in that exposure between the source electrode and the drain electrode The length of the light absorbing layer gone out is 3 μm, and width is 10 μm.
- 6. near infrared photodetector as claimed in claim 1, it is characterised in that the material of the substrate is silicon, the base The thickness at bottom is 300-500 μm, and resistivity is 1-10 Ω cm, and the material of the separation layer is silica, the separation layer Thickness be 200-500nm.
- 7. near infrared photodetector as claimed in claim 1, it is characterised in that be additionally provided with graphite on the light absorbing layer Alkene layer, nano metal layer or quantum dot layer.
- 8. near infrared photodetector as claimed in claim 1, it is characterised in that the source electrode and drain electrode material for gold, At least one of titanium, aluminium, chromium, tungsten and nickel.
- 9. near infrared photodetector as claimed in claim 8, it is characterised in that the source electrode and drain electrode be by layers of chrome and Layer gold is laminated the combination electrode to be formed, wherein, the layers of chrome contacts with the light absorbing layer, and the thickness of the layers of chrome is 5- 10nm, the thickness of the layer gold is 20-80nm.
- 10. a kind of preparation method of near infrared photodetector, it is characterised in that comprise the following steps：The separation layer of substrate and setting on the substrate is provided；β-InSe single crystal ingots are provided, β-InSe single crystal ingots is adhered on adhesive tape, tear tape 10-20 times repeatedly, is obtained β-InSe and receive Rice thin slice, then obtained β-InSe nano flakes are transferred on organic film, then by the β-InSe on the organic film Nano flake is transferred on the separation layer, forms light absorbing layer；Above the β-InSe nano flakes and not by spin coating light above the separation layer of β-InSe nano flakes covering Photoresist, after exposed and developed, form electrode pattern；Deposition of electrode material, organic solvent stripping photoresist is then used, form source electrode and drain electrode.
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