CN109411331A - Two-dimensional superlattice indium selenide and preparation method thereof with preparing the application in photodetector - Google Patents
Two-dimensional superlattice indium selenide and preparation method thereof with preparing the application in photodetector Download PDFInfo
- Publication number
- CN109411331A CN109411331A CN201811235022.0A CN201811235022A CN109411331A CN 109411331 A CN109411331 A CN 109411331A CN 201811235022 A CN201811235022 A CN 201811235022A CN 109411331 A CN109411331 A CN 109411331A
- Authority
- CN
- China
- Prior art keywords
- sio
- substrate
- inse
- dimensional superlattice
- preparation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02587—Structure
- H01L21/0259—Microstructure
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Nanotechnology (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
Abstract
The invention discloses a kind of two-dimensional superlattice indium selenide and preparation method thereof with preparing the application in photodetector, belong to high-performance field of photodetectors；Two-dimensional superlattice indium selenide the preparation method comprises the following steps: SiO2/ Si substrate pretreatment；SiO is transferred to after pasting InSe material with adhesive tape2In/Si substrate, acetone is impregnated；High-temperature process under vacuum condition, can be in SiO2Two-dimensional superlattice InSe nanometer sheet is made in/Si substrate surface.There is the two-dimensional superlattice InSe of the method for the present invention preparation high electricity to transport performance, high photoresponse, good stability and quick speed of photoresponse, have a good application prospect in high-performance field of photodetectors.
Description
Technical field
The invention belongs to high-performance field of photodetectors；More particularly to two-dimensional superlattice indium selenide and preparation method thereof with
Preparing the application in photodetector.
Background technique
Photodetector is a kind of device that optical signalling is changed into electrical signal, in optical communication, light imaging, environment prison
The fields such as survey, guided missile monitoring and remote control have huge application prospect, are the hot research fields of scientific circles, have attracted section
The extensive concern of scholar has obtained quick development.Semiconductor material with good absorbing ability and electric property is to set
The basis basis of meter preparation high-performance optical electric explorer.Photoelectricity based on conventional semiconductor material (silicon, gallium nitride and arsenic indium gallium)
Detector shows lesser photodetection performance, and photoresponse value is less than 1A/W.
Nano material has the special electrical and optical performance different from three-dimensional material, leads in high-performance optical electric explorer
Domain has huge application prospect.Up to the present, scientist explores various nano materials, such as carbon nanotube and nano wire.
However, the poor poor repeatability of stability and material of device is to perplex the greatest problem of monodimension nanometer material application.Two dimension
Semiconductor material can overcome the weakness of one-dimensional material, and be adapted with present thin film integration technology.However two-dimensional semiconductor
The electricity of material transports performance much smaller than 3 D semiconductor material, explores high electricity and transports the two-dimensional semiconductor material of performance to hair
High performance photodetector is opened up to be of great significance.
Summary of the invention
The invention solves the optical detections that existing two-dimensional semiconductor material electricity transports performance difference and its photodetector
The low technical problem of energy, and provide the preparation method of two-dimensional superlattice indium selenide and its preparing answering in photodetector
With.
The present invention is prepared for two-dimensional superlattice InSe using indium selenide (InSe) nanometer sheet as raw material, using solid phase annealing method,
And photodetector is constructed.
Firstly, the present invention provides a kind of preparation method of two-dimensional superlattice indium selenide, technical solution is as follows:
Step 1: by SiO2/ Si substrate is pre-processed；
Step 2: pasting block InSe material repeatedly with adhesive tape, then adhesive tape is pasted onto through at step 1
SiO after reason2In/Si substrate, after tearing adhesive tape off, by SiO2/ Si substrate is impregnated in acetone, and SiO is taken out2/ Si substrate is
The two-dimentional InSe nanometer sheet of random distribution can be obtained on its surface；
Step 3: by SiO2/ Si substrate is put into tube furnace, by tubular type stove evacuation, and is passed through Ar/H2Mixed gas,
350 DEG C are warming up to, then heat preservation is cooled to room temperature, take out SiO2/ Si substrate, can be in SiO2Two dimension is made in/Si substrate surface
Superlattices InSe nanometer sheet.
In step 1, the SiO2/ Si substrate thickness is 300nm.The SiO2/ Si substrate pretreatment method specifically: will
SiO2/ Si substrate, which successively immerses in isopropanol, acetone, ethyl alcohol and ultrapure water, to be ultrasonically treated, with being dried with nitrogen, for use.It is described super
The essence of sonication is to be cleaned by ultrasonic, supersonic frequency 10KHz or more.
It is described to paste block InSe material repeatedly in step 2, refer to and adhesive tape is pasted onto block InSe material surface,
Then adhesive tape is removed, is repeated aforesaid operations 4-9 times, each paste operation is identical (substantially using the position of adhesive tape
Overlapping).
In step 2, the preferred Scotch single side adhesive tape of adhesive tape.
It is described that adhesive tape is pasted onto through step 1 treated SiO in step 22In/Si substrate, the stickup time is
5~12 hours.
It is described by SiO in step 22/ Si substrate is impregnated in acetone, and soaking time is 2~4 hours.
It is described to vacuumize in step 3, pressure 50-100Torr.
In step 3, the Ar/H2Mixed gas in, Ar/H2Volume ratio be (9-4): 1；The Ar/H2Mixing
The flow of gas is 100-150sccm.
In step 3, the heating, heating rate is 20-40 DEG C/min.
In step 3, the heat preservation, soaking time is 0.5-1.5 hours.
In step 3, the cooling, cooling rate is 100-200 DEG C/min.
In addition, the present invention also provides the two-dimensional superlattice InSe of above method preparation and its in preparing photodetector
Using application specifically: surface is taken to have the SiO of two-dimensional superlattice InSe nanometer sheet2/ Si substrate, in InSe nanometer sheet one
Side fixes the center of metal mask plate covering two-dimensional superlattice InSe nanometer sheet with elargol, and two sides respectively reserve two-dimensional superlattice
It at least 3 μm of InSe nanometer sheet width, is subsequently placed in vacuum coating equipment, is successively deposited under vacuum condition in InSe nanometer sheet side
Metal chromium electrode and metal gold electrode are to get the spy to two-dimensional superlattice indium selenide photodetector, for ultraviolet-visible light
It surveys.
The surface has the SiO of two-dimensional superlattice InSe nanometer sheet2/ Si substrate, the InSe nanometer sheet on surface are horizontal
To having a size of 20-40 μm, with a thickness of 20-40nm.
The vacuum condition, vacuum degree are 1 × 10-4-5×10-4Pa。
The evaporation metal chromium electrode with a thickness of 5-10nm.
The evaporation metal gold electrode with a thickness of 30-50nm.
Beneficial effect
There is the two-dimensional superlattice InSe of the method for the present invention preparation high electricity to transport performance, high photoresponse, good
Stability and quick speed of photoresponse have a good application prospect in high-performance field of photodetectors.
The two-dimensional superlattice InSe of the method for the present invention preparation is used to prepare photodetector, and obtained photodetector is can
Electric current dramatically increases under light-exposed irradiation, illustrates that two-dimensional superlattice InSe prepared by the present invention has good photodetection performance,
Photoresponse value is up to the coefficient of strain and is up to 1.95 × 105A/W is much higher than conventional semiconductors (silicon, gallium nitride and arsenic indium gallium < 1A/
) and two-dimensional semiconductor material (InSe:10 W3A/W,MoS2:880A/W)。
The two-dimensional superlattice InSe of the method for the present invention preparation is used to prepare photodetector, and obtained photodetector has
Good stability and fast corresponding speed (20ms), two-dimensional superlattice indium selenide have very in high-performance field of photodetectors
Big application prospect.
Detailed description of the invention
Fig. 1 is a) two dimension InSe and b) the selection image K-M of two-dimensional superlattice InSe；
Fig. 2 is a) schematic three dimensional views, b) optical imagery and c) the atomic force image of two-dimensional superlattice InSe photodetector；
Fig. 3 is that the electricity of the two-dimensional superlattice InSe prepared transports performance: a) transfer curve and b) curve of output；
Fig. 4 is current curve of the two-dimensional superlattice InSe photodetector under 700nm excitation；
Fig. 5 is a) stability and b) response speed curve of two-dimensional superlattice InSe photodetector.
Specific embodiment
The preparation of 1 two-dimensional superlattice InSe of embodiment
Step 1: by the SiO of 300nm thickness2/ Si substrate successively uses isopropanol, acetone, 10KHz in ethyl alcohol and ultrapure water
Lower ultrasonic treatment, sonication treatment time are 10min, with being dried with nitrogen, for use；
Step 2: block InSe material is pasted repeatedly 6 times with the essentially identical position of adhesive tape, then by adhesive tape
It is pasted onto through step 1 treated 300nm SiO2SiO in/Si substrate2It side 8 hours will after removing adhesive tape
SiO2/ Si substrate is impregnated 3 hours in acetone, and SiO is taken out2/ Si substrate can obtain the two-dimentional InSe of random distribution on its surface
Nanometer sheet；
Step 3: by SiO2/ Si substrate is put into tube furnace, tube furnace is evacuated to 80Torr, and be passed through 100sccm
Ar/H2Mixed gas (VAr:VH2=80:20), furnace temperature was risen to 350 DEG C in 17.5 minutes, is kept for 1 hour, be then down within 2 minutes
Room temperature takes out SiO2/ Si substrate, can be prepared by two-dimensional superlattice InSe.
The preparation of 2 two-dimensional superlattice InSe photodetector of embodiment
300nm SiO prepared by selection example 12Lateral dimension is 50 microns and with a thickness of 31nm on/Si substrate surface
Two-dimensional superlattice InSe nanometer sheet, with elargol fix metal mask plate covering two-dimensional superlattice InSe nanometer sheet center,
Two sides respectively reserve 3 μm of width of two-dimensional superlattice InSe nanometer sheet, are subsequently placed in vacuum coating equipment, are 3 × 10 in vacuum degree-4Pa
Under the conditions of, 5nm crome metal and 40nm metal gold electrode is successively deposited in two-dimensional superlattice InSe nanometer sheet side, can be obtained two
Tie up superlattices InSe photodetector.
Detection using the two-dimensional superlattice InSe photodetector of present embodiment to 700nm exciting light:
In present embodiment, two-dimensional superlattice InSe nanometer sheet is obtained by heat treatment, Fig. 1 is eigen I nSe and superlattices
The selection image K-M of InSe, comparison can learn the available two-dimensional superlattice InSe of heat treatment.Size is chosen in 20-
40 microns, channel material of the thickness in 20-40 nanometers of two-dimensional superlattice InSe as photodetector.Fig. 2 c is that two dimension is super brilliant
The thickness of the atomic force image of lattice InSe photodetector, the two-dimensional superlattice InSe nanometer sheet chosen as shown in Figure 2 c is
31nm.Fig. 3 is that the electricity of the two-dimensional superlattice InSe prepared transports curve, and the electron mobility that superlattices InSe is calculated is high
Up to 299cm2V-1s-1, can learn that the mechanics sensor has high electricity conductive performance by Fig. 3, be high-performance optical electric explorer
It lays the foundation.Fig. 4 is two-dimensional superlattice InSe photodetector in exciting power 0.29mW/cm2700nm excitation under
Current curve, can be learnt by Fig. 4 and excite electric current under light action to dramatically increase in 700nm, it is fine to illustrate that two-dimentional InSe has
Optical detection performance, be calculated apply 5V voltage when photodetector photoresponse value be up to 1.95 × 105A/W.Fig. 5 be
0.1V voltage, 0.29mW/cm2700nm exciting light test condition under photodetector stability and response speed curve, by
This can learn that two-dimensional superlattice InSe photodetector has good stability and quick speed of photoresponse (20ms), into
One step illustrates that two-dimensional superlattice InSe has good photodetection performance.
Claims (10)
1. a kind of preparation method of two-dimensional superlattice indium selenide, it is characterised in that: the following steps are included:
Step 1: by SiO2/ Si substrate is pre-processed；
Step 2: pasting block InSe material repeatedly with adhesive tape, then adhesive tape is pasted onto after step 1 is handled
SiO2In/Si substrate, after tearing adhesive tape off, by SiO2/ Si substrate is impregnated in acetone, and SiO is taken out2/ Si substrate can be
The two-dimentional InSe nanometer sheet of its surface acquisition random distribution；
Step 3: by SiO2/ Si substrate is put into tube furnace, by tubular type stove evacuation, and is passed through Ar/H2Mixed gas, heating
To 350 DEG C, then heat preservation is cooled to room temperature, takes out SiO2/ Si substrate, can be in SiO2It is super brilliant that two dimension is made in/Si substrate surface
Lattice InSe nanometer sheet.
2. the preparation method of two-dimensional superlattice indium selenide according to claim 1, it is characterised in that: described in step 1
SiO2/ Si substrate thickness is 300nm；The SiO2/ Si substrate pretreatment method specifically: by SiO2/ Si substrate successively immerses different
It is ultrasonically treated in propyl alcohol, acetone, ethyl alcohol and ultrapure water, with being dried with nitrogen, for use.
3. the preparation method of two-dimensional superlattice indium selenide according to claim 1, it is characterised in that: described in step 2
Block InSe material is pasted repeatedly, refers to and adhesive tape is pasted onto block InSe material surface, then remove adhesive tape, weight
Multiple aforesaid operations 4-9 times.
4. the preparation method of two-dimensional superlattice indium selenide according to claim 1, it is characterised in that: will described in step 2
Adhesive tape is pasted onto through step 1 treated SiO2In/Si substrate, pasting the time is 5~12 hours.
5. the preparation method of two-dimensional superlattice indium selenide according to claim 1, it is characterised in that: described in step 2
By SiO2/ Si substrate is impregnated in acetone, and soaking time is 2~4 hours.
6. the preparation method of two-dimensional superlattice indium selenide according to claim 1, it is characterised in that: described in step 3
It vacuumizes, pressure 50-100Torr；The Ar/H2Mixed gas in, Ar/H2Volume ratio be (9-4): 1；The Ar/H2
Mixed gas flow be 100-150sccm.
7. the preparation method of two-dimensional superlattice indium selenide according to claim 1, it is characterised in that: described in step 3
Heating, heating rate are 20-40 DEG C/min；The heat preservation, soaking time are 0.5-1.5 hours；The cooling, cooling rate are
100-200℃/min。
8. two-dimensional superlattice selenium prepared by a kind of preparation method of described in any item two-dimensional superlattice indium selenides of claim 1-7
Change indium.
9. a kind of two-dimensional superlattice indium selenide according to any one of claims 8 is preparing the application in photodetector, it is characterised in that:
Surface is taken to have the SiO of two-dimensional superlattice InSe nanometer sheet2/ Si substrate, fixes metal with elargol in InSe nanometer sheet side and covers
Diaphragm plate covers the center of two-dimensional superlattice InSe nanometer sheet, and two sides respectively reserve two-dimensional superlattice InSe nanometer sheet width at least
It 3 μm, is subsequently placed in vacuum coating equipment, in InSe nanometer sheet side successively evaporation metal chromium electrode and metallic gold under vacuum condition
Electrode to get arrive two-dimensional superlattice indium selenide photodetector.
10. two-dimensional superlattice indium selenide according to claim 9 exists preparing the application in photodetector, feature
In: the surface has the SiO of two-dimensional superlattice InSe nanometer sheet2/ Si substrate, the InSe nanometer sheet lateral dimension on surface
It is 20-40 μm, with a thickness of 20-40nm；The vacuum condition, vacuum degree are 1 × 10-4-5×10-4Pa；The evaporation metal chromium
Electrode with a thickness of 5-10nm；The evaporation metal gold electrode with a thickness of 30-50nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811235022.0A CN109411331B (en) | 2018-10-23 | 2018-10-23 | Two-dimensional superlattice indium selenide, preparation method thereof and application thereof in preparation of photoelectric detector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811235022.0A CN109411331B (en) | 2018-10-23 | 2018-10-23 | Two-dimensional superlattice indium selenide, preparation method thereof and application thereof in preparation of photoelectric detector |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN109411331A true CN109411331A (en) | 2019-03-01 |
| CN109411331B CN109411331B (en) | 2020-11-06 |
Family
ID=65468937
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811235022.0A Expired - Fee Related CN109411331B (en) | 2018-10-23 | 2018-10-23 | Two-dimensional superlattice indium selenide, preparation method thereof and application thereof in preparation of photoelectric detector |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109411331B (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109950364A (en) * | 2019-04-02 | 2019-06-28 | 中国科学院半导体研究所 | Image-forming component preparation method based on two-dimentional selenizing germanous photodetector |
| CN110429148A (en) * | 2019-07-31 | 2019-11-08 | 南京倍格电子科技有限公司 | A kind of selenides nanometer rods, preparation method and its photodetector of preparation |
| CN111509050A (en) * | 2020-04-16 | 2020-08-07 | 西北工业大学 | Metal-two-dimensional indium selenide-graphite Schottky diode and preparation method thereof |
| CN113328004A (en) * | 2021-04-23 | 2021-08-31 | 深圳大学 | Indium selenide photoelectric detector for surface modification by utilizing stannous selenide nanocrystals and preparation method thereof |
| CN113445025A (en) * | 2021-06-03 | 2021-09-28 | 东北林业大学 | Preparation of wafer-level two-dimensional In by chemical vapor deposition2Se3Method for making thin film |
| CN113707560A (en) * | 2020-05-21 | 2021-11-26 | 哈尔滨工业大学 | Method for improving electrical contact of two-dimensional transition metal chalcogenide by inserting two-dimensional semiconductor indium selenide nanosheets |
| CN116143167A (en) * | 2023-02-22 | 2023-05-23 | 重庆大学 | Growing In based on polycrystalline InSe 2 O 3 Method for preparing nanowire |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102897750A (en) * | 2011-07-29 | 2013-01-30 | 浙江大学 | PrPrearation method for graphene film |
| US20150249212A1 (en) * | 2014-02-28 | 2015-09-03 | International Business Machines Corporation | Optoelectronics integration by transfer process |
| CN106185900A (en) * | 2016-07-12 | 2016-12-07 | 中国科学院上海微系统与信息技术研究所 | A kind of method shifting Graphene |
| CN107246929A (en) * | 2017-06-01 | 2017-10-13 | 哈尔滨工业大学 | The preparation method and applications of two-dimentional indium selenide mechanics sensor |
| CN107863402A (en) * | 2017-11-03 | 2018-03-30 | 深圳大学 | A kind of near infrared photodetector and preparation method thereof |
| CN108565301A (en) * | 2018-04-08 | 2018-09-21 | 哈尔滨工业大学 | Photodetector and preparation method based on metal surface plasma induction two waveband response |
-
2018
- 2018-10-23 CN CN201811235022.0A patent/CN109411331B/en not_active Expired - Fee Related
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102897750A (en) * | 2011-07-29 | 2013-01-30 | 浙江大学 | PrPrearation method for graphene film |
| US20150249212A1 (en) * | 2014-02-28 | 2015-09-03 | International Business Machines Corporation | Optoelectronics integration by transfer process |
| CN106185900A (en) * | 2016-07-12 | 2016-12-07 | 中国科学院上海微系统与信息技术研究所 | A kind of method shifting Graphene |
| CN107246929A (en) * | 2017-06-01 | 2017-10-13 | 哈尔滨工业大学 | The preparation method and applications of two-dimentional indium selenide mechanics sensor |
| CN107863402A (en) * | 2017-11-03 | 2018-03-30 | 深圳大学 | A kind of near infrared photodetector and preparation method thereof |
| CN108565301A (en) * | 2018-04-08 | 2018-09-21 | 哈尔滨工业大学 | Photodetector and preparation method based on metal surface plasma induction two waveband response |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109950364A (en) * | 2019-04-02 | 2019-06-28 | 中国科学院半导体研究所 | Image-forming component preparation method based on two-dimentional selenizing germanous photodetector |
| CN109950364B (en) * | 2019-04-02 | 2021-07-27 | 中国科学院半导体研究所 | Preparation method of imaging element based on two-dimensional germanium selenide photoelectric detector |
| CN110429148A (en) * | 2019-07-31 | 2019-11-08 | 南京倍格电子科技有限公司 | A kind of selenides nanometer rods, preparation method and its photodetector of preparation |
| CN111509050A (en) * | 2020-04-16 | 2020-08-07 | 西北工业大学 | Metal-two-dimensional indium selenide-graphite Schottky diode and preparation method thereof |
| CN111509050B (en) * | 2020-04-16 | 2021-08-06 | 西北工业大学 | Metal-two-dimensional indium selenide-graphite Schottky diode and preparation method thereof |
| CN113707560A (en) * | 2020-05-21 | 2021-11-26 | 哈尔滨工业大学 | Method for improving electrical contact of two-dimensional transition metal chalcogenide by inserting two-dimensional semiconductor indium selenide nanosheets |
| CN113707560B (en) * | 2020-05-21 | 2023-07-18 | 哈尔滨工业大学 | Method for improving electrical contact of two-dimensional transition metal chalcogenide by inserting two-dimensional semiconductor indium selenide nano-sheet |
| CN113328004A (en) * | 2021-04-23 | 2021-08-31 | 深圳大学 | Indium selenide photoelectric detector for surface modification by utilizing stannous selenide nanocrystals and preparation method thereof |
| CN113328004B (en) * | 2021-04-23 | 2022-11-01 | 深圳大学 | Indium selenide photoelectric detector for surface modification by utilizing stannous selenide nanocrystals and preparation method thereof |
| CN113445025A (en) * | 2021-06-03 | 2021-09-28 | 东北林业大学 | Preparation of wafer-level two-dimensional In by chemical vapor deposition2Se3Method for making thin film |
| CN116143167A (en) * | 2023-02-22 | 2023-05-23 | 重庆大学 | Growing In based on polycrystalline InSe 2 O 3 Method for preparing nanowire |
Also Published As
| Publication number | Publication date |
|---|---|
| CN109411331B (en) | 2020-11-06 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN109411331A (en) | Two-dimensional superlattice indium selenide and preparation method thereof with preparing the application in photodetector | |
| CN110176533A (en) | A kind of spin electric device of photoresponse and preparation method thereof | |
| Luo et al. | High‐performance ultraviolet photodetectors enabled by van der Waals Schottky junction based on TiO2 nanorod arrays/Au‐modulated Ti3C2Tx MXene | |
| CN110164997B (en) | High-performance infrared detector based on high-hole-mobility GaSb nanowire and preparation method thereof | |
| Di et al. | Impacts of post-metallisation processes on the electrical and photovoltaic properties of Si quantum dot solar cells | |
| CN111129169B (en) | Photoelectric device based on graphene/tungsten diselenide/tin diselenide laminated structure and preparation method thereof | |
| Withanage et al. | Low pressure CVD growth of 2D PdSe2 thin film and its application in PdSe2-MoSe2 vertical heterostructure | |
| Luo et al. | High specific detectivity infrared detector using crystal ion slicing transferred LiTaO3 single-crystal thin films | |
| CN110190150B (en) | Broadband high-performance photoelectric detector based on palladium selenide thin film/silicon cone packaging structure heterojunction and manufacturing method thereof | |
| Gautam et al. | Investigation of RF sputtered, n-Bi2Se3 heterojunction on p-Si for enhanced NIR optoelectronic applications | |
| CN107574475B (en) | A kind of HfS2The preparation method of single crystal nanoplate | |
| CN110148643A (en) | Surface photovoltage semiconductor-quantum-point of good performance/graphene Van der Waals knot thin film flexible device construction method | |
| Yan et al. | Preparation and photoelectric characterization of p-GeSe/p-WS2 heterojunction devices | |
| CN109285900A (en) | Two-dimentional Ca1-xInxSe alloy and preparation method thereof and the application in preparation photodetection | |
| CN108640091B (en) | A kind of method that chemical vapour deposition technique prepares two selenizing tantalum nanometer sheets | |
| CN116544302A (en) | ZrS based on quasi-one-dimensional van der Waals material 3 Preparation method of adjustable polarization photoelectric detector of nano belt | |
| CN110212025A (en) | A kind of field-effect tube array and preparation method based on two selenizing platinum semiconductors | |
| Dondapati et al. | High-performance chemical-bath deposited CdS thin-film transistors with ZrO2 gate dielectric | |
| CN113707752B (en) | Two-dimensional material CrPS4Method for constructing visible-near infrared photoelectric detector of heterojunction | |
| WO2015043104A1 (en) | High-sensitivity hot electron thermal radiation detection meter and manufacturing method therefor | |
| Latyshev et al. | Graphene production by etching natural graphite single crystals in a plasma-chemical reactor based on beam-plasma discharge | |
| CN110683533A (en) | Method for changing coupling property of double-layer graphene and double-layer graphene | |
| Nasab et al. | Nanostructural and barrier property characterization of ZnO/PEDOT: PSS heterojunction by adjusting RF power in the magnetron sputtering deposition technique | |
| CN116443823B (en) | Preparation method of tellurium alkene nano structure | |
| CN103872239B (en) | Metal organic coordination polymer film, thermo-electric device and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20201106 Termination date: 20211023 |