CN109411331B - Two-dimensional superlattice indium selenide, preparation method thereof and application thereof in preparation of photoelectric detector - Google Patents
Two-dimensional superlattice indium selenide, preparation method thereof and application thereof in preparation of photoelectric detector Download PDFInfo
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- CN109411331B CN109411331B CN201811235022.0A CN201811235022A CN109411331B CN 109411331 B CN109411331 B CN 109411331B CN 201811235022 A CN201811235022 A CN 201811235022A CN 109411331 B CN109411331 B CN 109411331B
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Abstract
The invention discloses a two-dimensional superlattice indium selenide, a preparation method thereof and application thereof in preparing a photoelectric detector, belonging to a high-performance photoelectric detectorA field; the preparation method of the two-dimensional superlattice indium selenide comprises the following steps: SiO 22Pre-treating a Si substrate; the InSe material is pasted by a transparent adhesive tape and then is transferred to SiO2Soaking acetone on a Si substrate; high-temperature treatment under vacuum condition, namely in SiO2And preparing the two-dimensional superlattice InSe nanosheet on the surface of the/Si substrate. The two-dimensional superlattice InSe prepared by the method has high electrical transport performance, high photoresponse, good stability and rapid photoresponse speed, and has good application prospect in the field of high-performance photoelectric detectors.
Description
Technical Field
The invention belongs to the field of high-performance photoelectric detectors; in particular to two-dimensional superlattice indium selenide, a preparation method thereof and application thereof in preparing a photoelectric detector.
Background
The photoelectric detector is a device for converting an optical signal into an electrical signal, has huge application prospects in the fields of optical communication, optical imaging, environment monitoring, missile monitoring, remote control and the like, is a hot research field of the scientific community, attracts the wide attention of scientists, and is rapidly developed. The semiconductor material with good light absorption capability and electrical property is the basis for designing and preparing the high-performance photoelectric detector. Photodetectors based on conventional semiconductor materials (silicon, gallium nitride and indium gallium arsenide) exhibit small photodetection performance with photoresponse values less than 1A/W.
The nano material has special electrical and optical properties different from three-dimensional materials, and has huge application prospect in the field of high-performance photoelectric detectors. To date, scientists have explored a variety of nanomaterials, such as carbon nanotubes and nanowires. However, the poor stability of the device and the poor reproducibility of the material are the biggest problems that plague the application of one-dimensional nanomaterials. The two-dimensional semiconductor material can overcome the weakness of the one-dimensional material and is compatible with the existing thin film integration technology. However, the electrical transport performance of the two-dimensional semiconductor material is far smaller than that of the three-dimensional semiconductor material, and the exploration of the two-dimensional semiconductor material with high electrical transport performance has great significance for developing high-performance photoelectric detectors.
Disclosure of Invention
The invention provides a preparation method of two-dimensional superlattice indium selenide and application thereof in preparing a photoelectric detector, aiming at solving the technical problems of poor electrical transport performance of the existing two-dimensional semiconductor material and low optical detection performance of the photoelectric detector.
The invention takes indium selenide (InSe) nano sheets as raw materials, adopts a solid phase annealing method to prepare two-dimensional superlattice InSe, and constructs a photoelectric detector.
Firstly, the invention provides a preparation method of two-dimensional superlattice indium selenide, which has the following technical scheme:
step one, SiO2Pretreating a Si substrate;
step two, repeatedly sticking the bulk InSe material by using a transparent adhesive tape, and then sticking the transparent adhesive tape on the SiO treated in the step one2On the/Si substrate, after the transparent adhesive tape is torn off, SiO is added2Soaking the/Si substrate in acetone, taking out SiO2the/Si substrate can obtain two-dimensional InSe nano sheets which are randomly distributed on the surface of the substrate;
step three, mixing SiO2Putting the/Si substrate into a tube furnace, vacuumizing the tube furnace, and introducing Ar/H2Heating the mixed gas to 350 ℃, preserving the heat, then cooling to room temperature, taking out the SiO2On a Si substrate, i.e. in SiO2And preparing the two-dimensional superlattice InSe nanosheet on the surface of the/Si substrate.
In step one, the SiO2The thickness of the/Si substrate was 300 nm. The SiO2The method for pretreating the Si substrate comprises the following steps: mixing SiO2Sequentially immersing the Si substrate into isopropanol, acetone, ethanol and ultrapure water for ultrasonic treatment, and blowing by using nitrogen for later use. The essence of the ultrasonic treatment is ultrasonic cleaning, and the ultrasonic frequency is more than 10 KHz.
In the second step, the step of repeatedly pasting the bulk InSe material refers to pasting the transparent adhesive tape on the surface of the bulk InSe material, then taking the transparent adhesive tape off, and repeating the above operations 4-9 times, wherein the positions of the transparent adhesive tape used in each pasting operation are the same (approximately overlapped).
In the second step, the Scotch single-sided transparent adhesive tape is preferably selected as the transparent adhesive tape.
In the second step, the transparent adhesive tape is pasted on the SiO treated in the first step2The sticking time on the Si substrate is 5-12 hours.
In the second step, SiO is added2Soaking the Si substrate in acetone for 2-4 hours.
And in the third step, vacuumizing is carried out, and the pressure is 50-100 Torr.
In step three, the Ar/H2In the mixed gas of (1), Ar/H2The volume ratio of (9-4) to (1); the Ar/H2The flow rate of the mixed gas of (1) is 100-150 sccm.
And in the third step, the temperature is increased at the speed of 20-40 ℃/min.
And in the third step, the heat preservation is carried out for 0.5 to 1.5 hours.
In the third step, the temperature is decreased at a speed of 100-.
In addition, the invention also provides the two-dimensional superlattice InSe prepared by the method and the application thereof in preparing the photoelectric detector, wherein the application specifically comprises the following steps: taking SiO with two-dimensional superlattice InSe nanosheet on surface2And a/Si substrate, wherein a silver glue is used for fixing a metal mask plate on one side of the InSe nanosheet to cover the central position of the two-dimensional superlattice InSe nanosheet, the width of the two-dimensional superlattice InSe nanosheet is at least 3 mu m, the two-dimensional superlattice InSe nanosheet is placed in a vacuum coating machine, and a metal chromium electrode and a metal gold electrode are sequentially evaporated on one side of the InSe nanosheet under a vacuum condition to obtain the two-dimensional superlattice indium selenide photoelectric detector for detecting ultraviolet-visible light.
The surface of the SiO provided with two-dimensional superlattice InSe nanosheets2The InSe nano sheet on the surface of the/Si substrate has the transverse dimension of 20-40 mu m and the thickness of 20-40 nm.
The vacuum degree is 1 × 10 under the vacuum condition-4-5×10-4Pa。
The thickness of the metal chromium electrode is 5-10 nm.
The thickness of the metal gold electrode is 30-50 nm.
Advantageous effects
The two-dimensional superlattice InSe prepared by the method has high electrical transport performance, high photoresponse, good stability and rapid photoresponse speed, and has good application prospect in the field of high-performance photoelectric detectors.
The two-dimensional superlattice InSe prepared by the method is used for preparing the photoelectric detector, and the current of the obtained photoelectric detector is obviously increased under the irradiation of visible light, so that the two-dimensional superlattice InSe prepared by the method has good photoelectric detection performance, and the photoresponse value is as high as that the strain coefficient is as high as 1.95 multiplied by 105A/W is much higher than that of the traditional semiconductor (silicon, gallium nitride and arsenic indium gallium are less than 1A/W) and two-dimensional semiconductor material (InSe: 10)3A/W,MoS2:880A/W)。
The two-dimensional superlattice InSe prepared by the method is used for preparing the photoelectric detector, the obtained photoelectric detector has good stability and high corresponding speed (20ms), and the two-dimensional superlattice indium selenide has great application prospect in the field of high-performance photoelectric detectors.
Drawings
FIG. 1 is a selected electron diffraction image of a) a two-dimensional InSe and b) a two-dimensional superlattice InSe;
FIG. 2 is a) three-dimensional schematic view, b) optical image, and c) atomic force image of a two-dimensional superlattice InSe photodetector;
fig. 3 is the electrical transport properties of the prepared two-dimensional superlattice InSe: a) a transfer curve and b) an output curve;
FIG. 4 is a current plot of a two-dimensional superlattice InSe photodetector under excitation of 700nm excitation light;
fig. 5 is a plot of a) stability and b) response speed for a two-dimensional superlattice InSe photodetector.
Detailed Description
Example 1 preparation of a two-dimensional superlattice InSe
Step one, SiO with the thickness of 300nm2Sequentially performing ultrasonic treatment on the Si substrate by using isopropanol, acetone, ethanol and ultrapure water under the condition of 10KHz, wherein the ultrasonic treatment time is 10min, and drying by using nitrogen for later use;
step two, repeatedly sticking the bulk InSe material for 6 times at the basically same position of the transparent adhesive tape, and then sticking the transparent adhesive tape on the SiO with the thickness of 300nm treated in the step one2SiO on a/Si substrate2One side for 8 hours, removing the transparent adhesive tape, and then adding SiO2Si substrateSoaking in acetone for 3 hr, taking out SiO2the/Si substrate can obtain two-dimensional InSe nano sheets which are randomly distributed on the surface of the substrate;
step three, mixing SiO2the/Si substrate was placed in a tube furnace, the tube furnace was evacuated to 80Torr and 100sccmAr/H was introduced2Mixed gas (V) ofAr:VH280:20), the furnace temperature was raised to 350 ℃ for 17.5 minutes, held for 1 hour, then cooled to room temperature for 2 minutes, and the SiO was removed2And preparing the two-dimensional superlattice InSe on the/Si substrate.
Example 2 preparation of a two-dimensional superlattice InSe photodetector
Selection of 300nm SiO prepared in example 12Covering the center of the two-dimensional superlattice InSe nanosheet with a transverse dimension of 50 microns and a thickness of 31nm on the surface of a Si substrate by using a silver adhesive to fix a metal mask plate, reserving the two-dimensional superlattice InSe nanosheets with widths of 3 microns at two sides respectively, then placing the two-dimensional superlattice InSe nanosheets into a vacuum coating machine, and placing the two-dimensional superlattice InSe nanosheets into the vacuum coating machine under the condition that the vacuum degree is 3 multiplied by 10-4And under the condition of Pa, sequentially evaporating 5nm of metal chromium and 40nm of metal gold electrode on one side of the two-dimensional superlattice InSe nanosheet to obtain the two-dimensional superlattice InSe photoelectric detector.
The detection of 700nm excitation light by the two-dimensional superlattice InSe photodetector of the present embodiment:
in this embodiment, a two-dimensional superlattice InSe nanosheet is obtained by heat treatment, and fig. 1 is a selected electron diffraction image of intrinsic InSe and superlattice InSe, and it can be known by comparison that the two-dimensional superlattice InSe can be obtained by heat treatment. Two-dimensional superlattice InSe with the size of 20-40 microns and the thickness of 20-40 nanometers is selected as a channel material of the photoelectric detector. Fig. 2c is an atomic force image of a two-dimensional superlattice InSe photodetector, with the thickness of the selected two-dimensional superlattice InSe nanosheet shown in fig. 2c being 31 nm. FIG. 3 is a graph of the electrical transport of the two-dimensional superlattice InSe prepared by calculation with electron mobility up to 299cm2V-1s-1It can be known from fig. 3 that the mechanical sensor has high electrical conductivity, which lays a foundation for a high-performance photoelectric detector. FIG. 4 shows a two-dimensional superlattice InSe photodetector with excitation power of 0.29mW/cm2700nm laser ofThe current curve under the luminescence excitation can be known from fig. 4 that the current is obviously increased under the action of the 700nm excitation light, which shows that the two-dimensional InSe has good photo-detection performance, and the photo-response value of the photo-detector is up to 1.95 multiplied by 10 when 5V voltage is applied through calculation5A/W. FIG. 5 shows the voltage at 0.1V and 0.29mW/cm2The stability and response speed curve of the photoelectric detector under the test condition of 700nm exciting light can be known that the two-dimensional superlattice InSe photoelectric detector has good stability and fast photoresponse speed (20ms), and the two-dimensional superlattice InSe is further explained to have good photoelectric detection performance.
Claims (9)
1. A preparation method of two-dimensional superlattice indium selenide is characterized by comprising the following steps: the method comprises the following steps:
step one, SiO2Pretreating a Si substrate;
step two, repeatedly sticking the bulk InSe material by using a transparent adhesive tape, and then sticking the transparent adhesive tape on the SiO treated in the step one2On the/Si substrate, after the transparent adhesive tape is torn off, SiO is added2Soaking the/Si substrate in acetone, taking out SiO2Obtaining two-dimensional InSe nanosheets which are randomly distributed on the surface of a Si substrate;
step three, mixing SiO2Putting the/Si substrate into a tube furnace, vacuumizing the tube furnace, and introducing Ar/H2Mixed gas of Ar/H2The volume ratio of (9-4) to (1), heating to 350 ℃, preserving heat, then cooling to room temperature, taking out SiO2On SiO with a Si substrate2Preparing a two-dimensional superlattice InSe nanosheet on the surface of the Si substrate; the temperature rising speed is 20-40 ℃/min; the heat preservation time is 0.5-1.5 hours; the cooling speed is 100-.
2. The method of claim 1, wherein the method comprises: in step one, the SiO2The thickness of the/Si substrate is 300 nm; the SiO2The method for pretreating the Si substrate comprises the following steps: mixing SiO2Sequentially immersing the Si substrate into isopropanol, acetone, ethanol and ultrapure water for ultrasonic treatment, and blowing by using nitrogen for later use.
3. The method of claim 1, wherein the method comprises: in the second step, the repeated sticking of the bulk InSe material refers to sticking the transparent adhesive tape on the surface of the bulk InSe material, then taking down the transparent adhesive tape, and repeating the operation for 4-9 times.
4. The method of claim 1, wherein the method comprises: in the second step, the transparent adhesive tape is stuck on the SiO treated in the first step2The sticking time on the Si substrate is 5-12 hours.
5. The method of claim 1, wherein the method comprises: in the second step, SiO is added2Soaking the Si substrate in acetone for 2-4 hours.
6. The method of claim 1, wherein the method comprises: in the third step, the vacuum pumping is carried out, and the pressure is 50-100 Torr; the introduction of Ar/H2The flow rate of the mixed gas is 100-150 sccm.
7. A two-dimensional superlattice indium selenide prepared by the preparation method of the two-dimensional superlattice indium selenide as claimed in any one of claims 1-6.
8. A method of fabricating a photodetector using the two-dimensional superlattice indium selenide as defined in claim 7, wherein: taking SiO with two-dimensional superlattice InSe nanosheet on surface2And a silicon substrate, wherein a silver glue is used for fixing a metal mask plate on one side of the InSe nanosheet to cover the central position of the two-dimensional superlattice InSe nanosheet, the width of the two-dimensional superlattice InSe nanosheet is at least 3 mu m, the two-dimensional superlattice InSe nanosheet is placed in a vacuum coating machine, and a metal chromium electrode and a metal gold electrode are sequentially evaporated on one side of the InSe nanosheet under the vacuum condition, so that the two-dimensional superlattice indium selenide photoelectric detector is obtained.
9. The method of claim 8, wherein the two-dimensional superlattice indium selenide is used for manufacturing a photodetector, and the method comprises the following steps: the surface of the SiO provided with two-dimensional superlattice InSe nanosheets2The InSe nanosheet on the surface of the Si substrate has the transverse dimension of 20-40 mu m and the thickness of 20-40 nm; the vacuum degree is 1 × 10 under the vacuum condition-4- 5×10-4Pa; the thickness of the metal chromium electrode is 5-10 nm; the thickness of the metal gold electrode is 30-50 nm.
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| CN111244206A (en) * | 2019-07-31 | 2020-06-05 | 南京倍格电子科技有限公司 | Selenide nanorod |
| CN111509050B (en) * | 2020-04-16 | 2021-08-06 | 西北工业大学 | Metal-two-dimensional indium selenide-graphite Schottky diode and preparation method thereof |
| CN113707560B (en) * | 2020-05-21 | 2023-07-18 | 哈尔滨工业大学 | Method for improving electrical contact of two-dimensional transition metal chalcogenide by inserting two-dimensional semiconductor indium selenide nano-sheet |
| CN113328004B (en) * | 2021-04-23 | 2022-11-01 | 深圳大学 | Indium selenide photoelectric detector for surface modification by utilizing stannous selenide nanocrystals and preparation method thereof |
| CN113445025B (en) * | 2021-06-03 | 2022-08-02 | 东北林业大学 | Preparation of wafer-level two-dimensional In by chemical vapor deposition 2 Se 3 Method for making thin film |
| CN116143167A (en) * | 2023-02-22 | 2023-05-23 | 重庆大学 | Growing In based on polycrystalline InSe 2 O 3 Method for preparing nanowire |
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