CN110148643B - Construction method of semiconductor quantum dot/graphene van der waals junction flexible device - Google Patents

Construction method of semiconductor quantum dot/graphene van der waals junction flexible device Download PDF

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CN110148643B
CN110148643B CN201910493441.2A CN201910493441A CN110148643B CN 110148643 B CN110148643 B CN 110148643B CN 201910493441 A CN201910493441 A CN 201910493441A CN 110148643 B CN110148643 B CN 110148643B
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何丹农
蔡葆昉
卢静
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Shanghai National Engineering Research Center for Nanotechnology Co Ltd
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Abstract

The invention relates to a construction method of a semiconductor quantum dot/graphene van der Waals junction film flexible device with good surface photovoltaic performance, which is a method for preparing single-layer graphene by mechanically peeling a flexible substrate through a chemical vapor deposition method, modifies semiconductor quantum dots on graphene, controls the annealing temperature and time of the device, optimizes van der Waals contact between the semiconductor quantum dots and the graphene, successfully constructs the semiconductor quantum dot/graphene van der Waals junction film flexible surface photovoltaic device with ideal surface photovoltaic response performance, and can be used for relative position detection or photoelectric detection.

Description

Construction method of semiconductor quantum dot/graphene van der waals junction flexible device
Technical Field
The invention belongs to the field of photovoltaic devices, and particularly relates to a construction method of a semiconductor quantum dot/graphene van der waals junction flexible device, in particular to a construction method of a semiconductor quantum dot/graphene van der waals junction thin film flexible device with good surface photovoltaic performance.
Background
In recent years, researchers have been working on developing flexible electronic products, which are expected to simulate the function of skin and to realize applications such as health monitoring and medical implantation. Polymeric film materials have long been the choice of flexible electronic materials due to the desired flexibility and reliability. With the development of the preparation process of the monoatomic layer inorganic two-dimensional material, the monoatomic layer inorganic two-dimensional material draws high attention in the development of high-performance flexible electronic devices and optoelectronic devices.
In a monoatomic layer inorganic two-dimensional material, graphene has great advantages in application of an optically active layer in a flexible optoelectronic device due to the characteristics of ultrahigh carrier mobility, high thermal/electrical conductivity, high mechanical strength, large comparative area, ideal chemical stability and the like. Although pure graphene has no band gap, it is an effective method to open the dirac cone of graphene through physical or chemical doping, so as to realize the adjustment and control of the band gap of graphene.
In 2011, Lemme et al applied a gate voltage to construct a substrate of SiO2Graphene in the/Si graphene device is electrically doped, so that the device shows excellent photoelectric response performance (Lemme M.C. et al; Gate-activated phosphor in a graphene p-n junction, Nano Lett., 2011, 11: 4134-.
In 2016, Sassi et al transferred graphene grown on copper foil by chemical vapor deposition to LiNbO3On the crystal, a high-performance mid-infrared photoelectric detector (Sassi U. et al; Graphene-based mid-isolated from the microwave-thermal conductivity probes with ultra high temperature conductivity of resistance, nat. Commun., 2016, 8: 14311) is obtained by photo-thermal electron doping.
In 2018, Wang et al well constructed a Seamless graphene p-n junction array by injecting n-type and p-type dopant ions into the same rigid substrate in selected regions respectively during the growth of graphene by a chemical vapor deposition method, and the Seamless graphene p-n junction array has good photoelectric response performance (Wang. et al; Seamless latex graphene p-n junctions for formed by selective in situ graphene for high-performance photo detectors, nat. Commun., 2018, 9: 5168).
The construction process of the graphene optoelectronic device on the rigid substrate has been widely researched and perfected, however, for constructing the flexible graphene optoelectronic device, the construction process of the related device still faces a great challenge, and most of the doping methods for graphene are only compatible with the rigid substrate.
Disclosure of Invention
Aiming at the defects of the prior art, the invention provides a construction method of a semiconductor quantum dot/graphene van der waals junction flexible device.
The invention is realized by adopting the following technical scheme: a method for constructing a semiconductor quantum dot/graphene van der Waals junction flexible device is characterized in that a method for preparing single-layer graphene by a flexible substrate mechanical peeling chemical vapor deposition method is adopted, semiconductor quantum dots are modified on the graphene, the annealing temperature and time of the device are controlled, van der Waals contact between the semiconductor quantum dots and the graphene is optimized, and the semiconductor quantum dot/graphene van der Waals junction thin film flexible surface photovoltaic device with ideal surface photovoltaic response performance is successfully constructed, and the method comprises the following steps:
1) transferring a single-layer graphene sample prepared by a chemical vapor deposition method onto special paper by a wet method, and placing the special paper on a hot plate for drying for 60-120 s at 30-60 ℃ to obtain the single-layer graphene sample with the substrate being the special paper;
2) attaching a pressure sensitive adhesive tape to the single-layer graphene film in the step 1), and applying appropriate pressure to the pressure sensitive adhesive tape so that the pressure sensitive adhesive tape is firmly combined with the graphene covered by the pressure sensitive adhesive tape;
3) removing the pressure-sensitive adhesive tape firmly combined with the graphene in the step 2) from the special paper to obtain a single-layer graphene sample on the flexible substrate;
4) and (3) carrying out ultrasonic dispersion treatment on the semiconductor quantum dots prepared by the solution method, then dropwise adding the sample obtained in the step 3), then putting the semiconductor quantum dots/graphene hybrid film on the obtained flexible substrate into an oven, and annealing at 40-70 ℃ for 1-2 hours under a vacuum condition to obtain the required product.
The drying temperature range of the graphene transferred on the special paper by the wet method in the step 1) is 30-60 ℃.
The drying time range of the graphene transferred on the special paper by the wet method in the step 1) is 60-120 s.
The flexible substrate in step 2) is selected to be a pressure sensitive adhesive tape.
In the step 4), the annealing time under the vacuum condition is 1-2 hours, and the annealing temperature is 40-70 ℃.
Compared with the prior art, the invention has the beneficial effects that:
the invention provides a method for constructing a semiconductor quantum dot/graphene Van der Waals junction film flexible surface photovoltaic device, a method for preparing single-layer graphene by a flexible substrate mechanical peeling chemical vapor deposition method under the condition of not adding any surfactant, modifying semiconductor quantum dots on graphene, controlling the annealing temperature and time of the device, optimizing Van der Waals contact between the semiconductor quantum dots and the graphene, successfully preparing the semiconductor quantum dots/graphene Van der Waals junction film flexible surface photovoltaic device, under the excitation of lasers with the wavelengths of 445nm, 510nm, 780nm, 980nm and 1064nm, the position detection sensitivity can reach 10.2 mV/mm, 26.4 mV/mm, 25.2 mV/mm, 21.2 mV/mm and 13.7 mV/mm respectively; in addition, the flexible device also shows good photoresponse cycle stability. The construction method is simple and controllable, has low cost and high repeatability, and has important application potential.
Drawings
FIG. 1: implementing a raman spectrum of graphene on a flexible substrate of the device 1;
FIG. 2: example device 1 surface photovoltaic response curves.
Detailed Description
The following examples are given for the detailed implementation and specific operation of the present invention, but the scope of the present invention is not limited to the following examples.
Example 1:
a method for constructing a semiconductor quantum dot/graphene Van der Waals junction film flexible device with good surface photovoltaic performance is characterized in that a method for preparing single-layer graphene by a flexible substrate mechanical stripping chemical vapor deposition method is adopted, semiconductor quantum dots are modified on graphene, the annealing temperature and time of the device are controlled, Van der Waals contact between the semiconductor quantum dots and the graphene is optimized, and the semiconductor quantum dot/graphene Van der Waals junction film flexible surface photovoltaic device with ideal surface photovoltaic response performance is successfully constructed, and the method comprises the following steps:
1) transferring a single-layer graphene sample prepared by a chemical vapor deposition method onto special paper by a wet method, and placing the special paper on a hot plate to be dried for 60s at 30 ℃ to obtain the single-layer graphene sample with the substrate being the special paper;
2) attaching a pressure sensitive adhesive tape to the single-layer graphene film with the substrate being the special paper, and applying appropriate pressure to the pressure sensitive adhesive tape so that the pressure sensitive adhesive tape is firmly combined with the graphene covered by the pressure sensitive adhesive tape;
3) removing the pressure-sensitive adhesive tape firmly combined with the graphene in the step 2) from the special paper to obtain a single-layer graphene sample on the flexible substrate;
4) will use the solution method to prepare the MoS2The quantum dots are subjected to ultrasonic dispersion treatment and then dripped on a single-layer graphene film sample on a flexible substrate, and then MoS on the obtained flexible substrate2And putting the quantum dot/graphene hybrid film into an oven, and annealing for 1 hour at 60 ℃ under a vacuum condition to obtain a required product, thus obtaining the semiconductor quantum dot/graphene van der Waals junction film flexible device with good surface photovoltaic performance. FIG. 1 is a Raman spectrum of graphene on a flexible substrate of the device; FIG. 2 is a photovoltaic response curve of the device surface.
Example 2:
a semiconductor quantum dot/graphene Van der Waals junction thin film flexible device with good surface photovoltaic performance is constructed according to the following steps:
1) transferring a single-layer graphene sample prepared by a chemical vapor deposition method onto special paper by a wet method, and placing the special paper on a hot plate to be dried for 60s at 30 ℃ to obtain the single-layer graphene sample with the substrate being the special paper;
2) attaching a pressure sensitive adhesive tape to the single-layer graphene film with the substrate being the special paper, and applying appropriate pressure to the pressure sensitive adhesive tape so that the pressure sensitive adhesive tape is firmly combined with the graphene covered by the pressure sensitive adhesive tape;
3) the pressure-sensitive adhesive tape firmly combined with the graphene is peeled off from the special paper, and then a single-layer graphene sample on the flexible substrate is obtained;
4) mixing MoS2The quantum dots are deposited on the single-layer graphene film sample on the flexible substrate in situ by a chemical vapor deposition method, and the semiconductor quantum dot/graphene van der Waals junction film flexible device with good surface photovoltaic performance can be obtained.
Example 3:
a semiconductor quantum dot/graphene Van der Waals junction thin film flexible device with good surface photovoltaic performance is constructed according to the following steps:
1) transferring a single-layer graphene sample prepared by a chemical vapor deposition method onto special paper by a wet method, and placing the special paper on a hot plate to be dried for 60s at 30 ℃ to obtain the single-layer graphene sample with the substrate being the special paper;
2) attaching a pressure sensitive adhesive tape to the single-layer graphene film with the substrate being the special paper, and applying appropriate pressure to the pressure sensitive adhesive tape so that the pressure sensitive adhesive tape is firmly combined with the graphene covered by the pressure sensitive adhesive tape;
3) the pressure-sensitive adhesive tape firmly combined with the graphene is peeled off from the special paper, and then a single-layer graphene sample on the flexible substrate is obtained;
4) mixing MoS2The quantum dots are in-situ deposited on the single-layer graphene film sample on the flexible substrate by an atomic layer deposition method, and the semiconductor quantum dot/graphene van der Waals junction film flexible device with good surface photovoltaic performance can be obtained.
Example 4:
a semiconductor quantum dot/graphene Van der Waals junction thin film flexible device with good surface photovoltaic performance is constructed according to the following steps:
1) transferring a single-layer graphene sample prepared by a chemical vapor deposition method onto special paper by a wet method, and placing the special paper on a hot plate to be dried for 60s at 30 ℃ to obtain the single-layer graphene sample with the substrate being the special paper;
2) attaching a pressure sensitive adhesive tape to the single-layer graphene film with the substrate being the special paper, and applying appropriate pressure to the pressure sensitive adhesive tape so that the pressure sensitive adhesive tape is firmly combined with the graphene covered by the pressure sensitive adhesive tape;
3) the pressure-sensitive adhesive tape firmly combined with the graphene is peeled off from the special paper, and then a single-layer graphene sample on the flexible substrate is obtained;
4) the ZnO quantum dots prepared by a solution method are subjected to ultrasonic dispersion treatment and then are dripped on a single-layer graphene film sample on a flexible substrate, and then the obtained ZnO quantum dot/graphene hybrid film on the flexible substrate is put into an oven and annealed for 1 hour at 60 ℃ under a vacuum condition; the semiconductor quantum dot/graphene Van der Waals junction film flexible device with good surface photovoltaic performance can be obtained.
Example 5:
a semiconductor quantum dot/graphene Van der Waals junction thin film flexible device with good surface photovoltaic performance is constructed according to the following steps:
1) transferring a single-layer graphene sample prepared by a chemical vapor deposition method onto special paper by a wet method, and placing the special paper on a hot plate to be dried for 60s at 30 ℃ to obtain the single-layer graphene sample with the substrate being the special paper;
2) attaching a pressure sensitive adhesive tape to the single-layer graphene film with the substrate being the special paper, and applying appropriate pressure to the pressure sensitive adhesive tape so that the pressure sensitive adhesive tape is firmly combined with the graphene covered by the pressure sensitive adhesive tape;
3) the pressure-sensitive adhesive tape firmly combined with the graphene is peeled off from the special paper, and then a single-layer graphene sample on the flexible substrate is obtained;
4) and in-situ depositing the ZnO quantum dots on the single-layer graphene film sample on the flexible substrate by an atomic layer deposition method to obtain the semiconductor quantum dot/graphene Van der Waals junction film flexible device with good surface photovoltaic performance.
Example 6:
a semiconductor quantum dot/graphene Van der Waals junction thin film flexible device with good surface photovoltaic performance is constructed according to the following steps:
1) transferring a single-layer graphene sample prepared by a chemical vapor deposition method onto special paper by a wet method, and placing the special paper on a hot plate to be dried for 60s at 30 ℃ to obtain the single-layer graphene sample with the substrate being the special paper;
2) attaching a pressure sensitive adhesive tape to the single-layer graphene film with the substrate being the special paper, and applying appropriate pressure to the pressure sensitive adhesive tape so that the pressure sensitive adhesive tape is firmly combined with the graphene covered by the pressure sensitive adhesive tape;
3) the pressure-sensitive adhesive tape firmly combined with the graphene is peeled off from the special paper, and then a single-layer graphene sample on the flexible substrate is obtained;
4) the PbS quantum dots prepared by a solution method are subjected to ultrasonic dispersion treatment and then are dripped on a single-layer graphene film sample on a flexible substrate, the PbS quantum dot/graphene hybrid film on the flexible substrate is placed in an oven, and annealing is carried out for 1 hour at 60 ℃ under a vacuum condition, so that the semiconductor quantum dot/graphene Van der Waals junction film flexible device with good surface photovoltaic performance can be obtained.
Example 7:
a semiconductor quantum dot/graphene Van der Waals junction thin film flexible device with good surface photovoltaic performance is constructed according to the following steps:
1) transferring a single-layer graphene sample prepared by a chemical vapor deposition method onto special paper by a wet method, and placing the special paper on a hot plate to be dried for 60s at 30 ℃ to obtain the single-layer graphene sample with the substrate being the special paper;
2) attaching a pressure sensitive adhesive tape to the single-layer graphene film with the substrate being the special paper, and applying appropriate pressure to the pressure sensitive adhesive tape so that the pressure sensitive adhesive tape is firmly combined with the graphene covered by the pressure sensitive adhesive tape;
3) the pressure-sensitive adhesive tape firmly combined with the graphene is peeled off from the special paper, and then a single-layer graphene sample on the flexible substrate is obtained;
4) c is to be60Dissolving in 1, 2, 3-trimethylbenzene solvent, performing ultrasonic dispersion treatment, dripping on a single-layer graphene film sample on a flexible substrate, and then adding C on the obtained flexible substrate60And putting the/graphene hybrid film into an oven, and annealing for 1 hour at 60 ℃ under a vacuum condition to obtain the semiconductor quantum dot/graphene van der Waals junction film flexible device with good surface photovoltaic performance.

Claims (2)

1. A method for constructing a semiconductor quantum dot/graphene Van der Waals junction film flexible device with good surface photovoltaic performance is characterized in that a method for preparing single-layer graphene by a flexible substrate mechanical stripping chemical vapor deposition method is adopted, semiconductor quantum dots are modified on the graphene, the annealing temperature and time of the device are controlled, Van der Waals contact between the semiconductor quantum dots and the graphene is optimized, and the semiconductor quantum dot/graphene Van der Waals junction film flexible surface photovoltaic device with ideal surface photovoltaic response performance is successfully constructed, and the method comprises the following steps:
1) transferring a single-layer graphene sample prepared by a chemical vapor deposition method onto special paper by a wet method, and placing the special paper on a hot plate to be dried for 60s at 30 ℃ to obtain the single-layer graphene sample with the substrate being the special paper;
2) attaching a pressure sensitive adhesive tape to the single-layer graphene film in the step 1), and applying appropriate pressure to the pressure sensitive adhesive tape so that the pressure sensitive adhesive tape is firmly combined with the graphene covered by the pressure sensitive adhesive tape;
3) removing the pressure-sensitive adhesive tape firmly combined with the graphene in the step 2) from the special paper to obtain a single-layer graphene sample on the flexible substrate;
4) and (2) performing ultrasonic dispersion treatment on the semiconductor quantum dots prepared by the solution method, then dropwise adding the sample obtained in the step 3), then putting the semiconductor quantum dot/graphene hybrid film on the obtained flexible substrate into an oven, and annealing at 60 ℃ for 1 hour under a vacuum condition to obtain a required product, wherein the quantum dots are MoS2, ZnO, PbS or C60 quantum dots.
2. The construction method according to claim 1, comprising the steps of:
1) transferring a single-layer graphene sample prepared by a chemical vapor deposition method onto special paper by a wet method, and placing the special paper on a hot plate to be dried for 60s at 30 ℃ to obtain the single-layer graphene sample with the substrate being the special paper;
2) attaching a pressure sensitive adhesive tape to the single-layer graphene film with the substrate being the special paper, and applying appropriate pressure to the pressure sensitive adhesive tape so that the pressure sensitive adhesive tape is firmly combined with the graphene covered by the pressure sensitive adhesive tape;
3) the pressure-sensitive adhesive tape firmly combined with the graphene is peeled off from the special paper, and then a single-layer graphene sample on the flexible substrate is obtained;
4) c is to be60Dissolving in 1, 2, 3-trimethylbenzene solvent, performing ultrasonic dispersion treatment, dripping on a single-layer graphene film sample on a flexible substrate, and then adding C on the obtained flexible substrate60And putting the/graphene hybrid film into an oven, and annealing for 1 hour at 60 ℃ under a vacuum condition to obtain the semiconductor quantum dot/graphene van der Waals junction film flexible device with good surface photovoltaic performance.
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CN112582548B (en) * 2020-12-28 2022-09-02 上海纳米技术及应用国家工程研究中心有限公司 Construction method of high-sensitivity photoelectric detector based on C60 nanorod/ZnO quantum dot
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