CN107579129B - A kind of silicon carbide/crystal-germanium/graphene heterojunction photoelectric device and its manufacturing method - Google Patents
A kind of silicon carbide/crystal-germanium/graphene heterojunction photoelectric device and its manufacturing method Download PDFInfo
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- CN107579129B CN107579129B CN201710803903.7A CN201710803903A CN107579129B CN 107579129 B CN107579129 B CN 107579129B CN 201710803903 A CN201710803903 A CN 201710803903A CN 107579129 B CN107579129 B CN 107579129B
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Abstract
The present invention discloses a kind of silicon carbide/crystal-germanium/graphene heterojunction photoelectric device and its manufacturing method, the photoelectric device includes two electrodes, it is connected with graphene layer, crystal germanium film layer, single crystal silicon carbide substrate between two electrodes in turn from top to bottom, the graphene layer is monatomic thickness or polyatom thickness, crystal germanium film layer with a thickness of 0.5-5 microns, single crystal silicon carbide substrate with a thickness of 100-400 microns.The present invention utilizes the high transmittance and high carrier mobility of graphene, high sensitive of the Ge near infrared light, novel SiC base Ge/ graphene hetero-junctions is formed with SiC, has obtained a kind of near-infrared light shutter device that can be applied to high-power, hot environment high speed, high response.
Description
Technical field
The present invention relates to electronics fields, and in particular to a kind of silicon carbide/crystal-germanium/graphene heterojunction photovoltaic device
Part and its manufacturing method.
Background technique
Along with the extensive use of electronic product, influence of the electromagnetic environment to the safety and reliability generation of electronic product
It can not be ignored with harm.Electromagnetic interference declines conventional electrical system performance, so that the phenomenon that can not working, happens occasionally.It adopts
It is to solve the effective way of electromagnetic interference problem with the mode of Phototube Coupling, this produces people to light-operated switch device is developed
Great interest.It is limited by silicon materials physical property itself, in terms of high temperature, high frequency and high-power applications, silicon substrate is all kinds of light-operated
The limitation of switching device is increasingly obvious, and silicon carbide device manifests great potential.But due to carbofrax material forbidden band
Width causes the carbonization silicon optical switch that can only be controlled by ultraviolet source, and ultraviolet light is not only harmful to human body, also not common close
Infrared communication light source, this is restricted the application of silicon carbide light-operated switch device.
Summary of the invention
To solve the above problems, the present invention provides a kind of silicon carbide/crystal-germanium/graphene heterojunction photoelectric device and
Its manufacturing method, using the high transmittance and high carrier mobility of graphene, Ge is to the high sensitive of near infrared light, with SiC
Novel SiC base Ge/ graphene hetero-junctions is formed, the light-operated switching device of SiC near-infrared is developed.
To achieve the above object, the technical scheme adopted by the invention is as follows:
A kind of silicon carbide/crystal-germanium/graphene heterojunction photoelectric device, including two electrodes, between two electrodes from top to bottom
It is connected with graphene layer, crystal germanium film layer, single crystal silicon carbide substrate in turn, the graphene layer is monatomic thickness or more
Atomic layers thick, crystal germanium film layer with a thickness of 0.5-5 microns, single crystal silicon carbide substrate with a thickness of 100-400 microns.
The present invention also provides a kind of silicon carbide/crystal-germanium/graphene heterojunction photoelectric device manufacturing methods, including
Following steps:
S1, after carrying out standard RCA clean processing to single crystal silicon carbide substrate, it is stand-by with being dried with nitrogen；
S2, crystal germanium layer prepared by chemical vapor deposition on completing the single crystal silicon carbide substrate after cleaning；
S3, using magnetron sputtering apparatus the resulting device of step S2 monocrystalline silicon carbide face deposit metal electrodes；Deposition
Time control is 0.1-2 hours, deposition pressure 0.1-10Pa, and sputtering power is 100-500 watts；
S4, short annealing processing is carried out to the resulting device of step S3, so that electrode forms Ohmic contact；
S5, step 4 obtained device is placed in chemical vapor depsotition equipment, using hydrogen and argon gas as carrier gas, is led to
Enter methane as growth source gas, is 850 DEG C -1050 DEG C in growth temperature, methane flow is under conditions of 0.5-20 ml/min
Chemical vapor deposition is carried out to the crystal germanium layer face of device, deposits graphene layer, growth time is 1-5 minutes；
S6, the graphene layer and electrode at plain conductor and the positive back side of step S5 obtained device are connected using screen printing
It connects to form extraction electrode.
Preferably, the step S2 specifically comprises the following steps: to be put into low-pressure vapor phase by cleaned SiC substrate
In chemical deposition equipment, reaction chamber is vacuumized, vacuum degree 10-3Pa, is then warming up to 1050 DEG C or so progress high-temperature hydrogens
Cleaning；Then the epitaxial growth for cooling to 600 DEG C of -900 DEG C of progress Ge is passed through germane as growth source using hydrogen as carrier gas
Gas is 600 DEG C -900 DEG C in growth temperature, and germane flow is to carry out the heavy of crystal germanium layer under conditions of 0.1-100 ml/min
Product, growth time control are 0.1-3 hours.
Preferably, the crystal germanium layer is membrane structure.
Preferably, the crystal germanium layer is micro-nano structure.
Preferably, the step S4 specifically comprises the following steps:
The resulting device of step S3 is placed in short annealing equipment, control annealing temperature is 800 DEG C -1100 DEG C to device
It is made annealing treatment, annealing time is -600 seconds 60 seconds.
Preferably, the metal electrode uses Ni or Ti.
The invention has the following advantages:
The present invention by preparing Ge/ graphene heterojunction structure on SiC, in conjunction with Ge to the hypersensitivity of near infrared light,
The high transmittance and high carrier mobility of graphene, obtaining can be in the response of the near-infrared height of high temperature, high-power environmental applications, height
The SiC base near-infrared light shutter device of speed.
Detailed description of the invention
Fig. 1 is a kind of silicon carbide of the embodiment of the present invention/crystal-germanium/graphene heterojunction photoelectric device structural schematic diagram.
Specific embodiment
In order to which objects and advantages of the present invention are more clearly understood, the present invention is carried out with reference to embodiments further
It is described in detail.It should be appreciated that the specific embodiments described herein are merely illustrative of the present invention, it is not used to limit this hair
It is bright.
As shown in Figure 1, the embodiment of the invention provides a kind of silicon carbide/crystal-germanium/graphene heterojunction photoelectric device,
Including two electrodes 1, it is connected with graphene layer 2, crystal germanium film layer 3, monocrystalline silicon carbide lining between two electrodes 1 in turn from top to bottom
Bottom 4, the graphene layer 2 be monatomic thickness or polyatom thickness, crystal germanium film layer 3 with a thickness of 0.5-5 micron, singly
Brilliant silicon carbide substrates 4 with a thickness of 100-400 microns.
The present invention also provides a kind of silicon carbide/crystal-germanium/graphene heterojunction photoelectric device manufacturing methods, including
Following steps:
S1, after carrying out standard RCA clean processing to single crystal silicon carbide substrate, it is stand-by with being dried with nitrogen；
S2, it is put into low-pressure vapor phase chemical deposition equipment by cleaned SiC substrate, reaction chamber is vacuumized,
Vacuum degree is 10-3Then Pa is warming up to 1050 DEG C or so progress high-temperature hydrogen cleanings；Then 600 DEG C of -900 DEG C of progress are cooled to
The epitaxial growth of Ge is passed through germane as growth source gas, is 600 DEG C -900 DEG C in growth temperature using hydrogen as carrier gas, germanium
Alkane flow is the deposition of progress crystal germanium layer under conditions of 0.1-100 ml/min, and growth time control is 0.1-3 hours；It is described
Crystal germanium layer can be membrane structure, or micro-nano structure；
S3, using magnetron sputtering apparatus the resulting device of step S2 monocrystalline silicon carbide face deposit metal electrodes；Deposition
Time control is 0.1-2 hours, deposition pressure 0.1-10Pa, and sputtering power is 100-500 watts；
S4, the resulting device of step S3 is placed in short annealing equipment, control annealing temperature is 800 DEG C -1100 DEG C right
Device is made annealing treatment, so that electrode forms Ohmic contact, annealing time is -600 seconds 60 seconds；
S5, step 4 obtained device is placed in chemical vapor depsotition equipment, using hydrogen and argon gas as carrier gas, is led to
Enter methane as growth source gas, is 850 DEG C -1050 DEG C in growth temperature, methane flow is under conditions of 0.5-20 ml/min
Chemical vapor deposition is carried out to the crystal germanium layer face of device, deposits graphene layer, growth time is 1-5 minutes；
S6, silver wire is connect with the graphene layer at the positive back side of step S5 obtained device and electrode using screen printing
Form extraction electrode.
This specific implementation first proposed prepares Ge/ graphene hetero-junctions on sic substrates, in conjunction with Ge near infrared light
High sensitive, the excellent materials performance such as graphene high transmittance, high carrier mobility and high heat conductance research and develop near-infrared Gao Xiang
The SiC base device of response, high speed, to realize general communication light source to the direct light-operated of SiC power device.In the device,
On the one hand, preferred material of the graphene as near infrared light window and device electrode, to improve SiC/Ge heterojunction device
Response speed and the absorptivity limited by conventional electrode materials.In view of its high heat conductance, graphene is also more suitable for SiC function
The light-operated field of rate device；On the other hand, graphene can also form schottky junction with Ge, and regulation SiC base Ge/ graphene is heterogeneous
The space-charge region of knot is distributed, and SiC/Ge heterojunction boundary state is avoided to directly affect device near infrared light electrical property.Ge is thin
Film is then used as the main absorbed layer of near infrared light in heterojunction device, makes up the low shortcoming of grapheme material absorptivity, improves
The near infrared light responsiveness of device.
The above is only a preferred embodiment of the present invention, it is noted that for the ordinary skill people of the art
For member, without departing from the principle of the present invention, it can also make several improvements and retouch, these improvements and modifications are also answered
It is considered as protection scope of the present invention.
Claims (5)
1. a kind of silicon carbide/crystal-germanium/graphene heterojunction photoelectric device, which is characterized in that including two electrodes (1), two electrodes
(1) graphene layer (2), crystal germanium film layer (3), single crystal silicon carbide substrate (4), the stone are connected between in turn from top to bottom
Black alkene layer (2) is monatomic thickness or polyatom thickness, crystal germanium film layer (3) with a thickness of 0.5-5 microns, carbide
Silicon substrate (4) with a thickness of 100-400 microns；Silicon carbide/crystal-germanium/graphene the heterojunction photoelectric device passes through following
Step manufacture:
S1, after carrying out standard RCA clean processing to single crystal silicon carbide substrate, it is stand-by with being dried with nitrogen；
S2, crystal germanium layer prepared by chemical vapor deposition on completing the single crystal silicon carbide substrate after cleaning；
S3, using magnetron sputtering apparatus the resulting device of step S2 monocrystalline silicon carbide face deposit metal electrodes；Sedimentation time
Control is 0.1-2 hours, deposition pressure 0.1-10Pa, and sputtering power is 100-500 watts；
S4, short annealing processing is carried out to the resulting device of step S3, so that electrode forms Ohmic contact；
S5, the step S4 obtained device is placed in chemical vapor depsotition equipment, using hydrogen and argon gas as carrier gas, is passed through first
Alkane as growth source gas, growth temperature be 850 DEG C -1050 DEG C, methane flow be 0.5-20 ml/min under conditions of to device
The crystal germanium layer face of part carries out chemical vapor deposition, deposits graphene layer, and growth time is 1-5 minutes；
S6, plain conductor is connect shape with the graphene layer at the positive back side of step S5 obtained device and electrode using screen printing
At extraction electrode；
The step S2 specifically comprises the following steps: that being put into low-pressure vapor phase chemical deposition by cleaned SiC substrate sets
It is standby interior, reaction chamber is vacuumized, vacuum degree 10-3Then Pa is warming up to 1050 DEG C or so progress high-temperature hydrogen cleanings；Then it drops
The epitaxial growth of temperature to 600 DEG C of -900 DEG C of progress Ge are passed through germane as growth source gas, are being grown using hydrogen as carrier gas
Temperature is 600 DEG C -900 DEG C, and germane flow is the deposition of progress crystal germanium layer under conditions of 0.1-100 ml/min, growth time
Control is 0.1-3 hours.
2. a kind of silicon carbide/crystal-germanium/graphene heterojunction photoelectric device manufacturing method as described in claim 1, special
Sign is that the crystal germanium layer is membrane structure.
3. a kind of silicon carbide/crystal-germanium/graphene heterojunction photoelectric device manufacturing method as described in claim 1, special
Sign is that the crystal germanium layer is micro-nano structure.
4. a kind of silicon carbide/crystal-germanium/graphene heterojunction photoelectric device manufacturing method as described in claim 1, special
Sign is that the step S4 specifically comprises the following steps:
The resulting device of step S3 is placed in short annealing equipment, control annealing temperature is 800 DEG C -1100 DEG C and carries out to device
Annealing, annealing time are -600 seconds 60 seconds.
5. a kind of silicon carbide/crystal-germanium/graphene heterojunction photoelectric device manufacturing method as described in claim 1, special
Sign is that the metal electrode uses Ni or Ti.
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| CN109055895B (en) * | 2018-07-20 | 2020-09-15 | 中国科学院上海微系统与信息技术研究所 | Method for directly preparing graphene quantum dot array on insulating substrate |
| CN114583003B (en) * | 2022-04-29 | 2022-10-11 | 浙江大学 | Vertical photoelectric detector based on silicon/graphene nano-film/germanium and preparation method |
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| CN103280484A (en) * | 2013-05-28 | 2013-09-04 | 合肥工业大学 | p-type graphene film/n-type Ge schottky junction near-infrared photoelectric detector and preparation method thereof |
| CN106057929A (en) * | 2016-05-31 | 2016-10-26 | 西安工程大学 | Silicon carbide-based PIN-structure near infrared photodiode and manufacturing method thereof |
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| CN103280484A (en) * | 2013-05-28 | 2013-09-04 | 合肥工业大学 | p-type graphene film/n-type Ge schottky junction near-infrared photoelectric detector and preparation method thereof |
| CN106057929A (en) * | 2016-05-31 | 2016-10-26 | 西安工程大学 | Silicon carbide-based PIN-structure near infrared photodiode and manufacturing method thereof |
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| Monolayer Graphene/Germanium Schottky Junction As High-Performance Self-Driven Infrared Light Photodetector;Long-Hui Zeng 等;《ACS Applied Materials & Interfaces》;20130916 |
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Inventor after: Li Lianbi Inventor after: Feng Song Inventor after: Song Lixun Inventor after: Lei Qianqian Inventor after: Cang Yuan Inventor after: Hu Jichao Inventor after: Lin Shenghuang Inventor after: He Xiaomin Inventor after: Han Yuling Inventor after: Chu Qing Inventor after: Pu Hongbin Inventor after: Feng Xianfeng Inventor before: Li Lianbi Inventor before: Cang Yuan Inventor before: Song Lixun Inventor before: Pu Hongbin Inventor before: Feng Xianfeng Inventor before: Tu Zheyan Inventor before: Han Yuling Inventor before: Chu Qing |
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