CN107132497B - Substrate for nondestructive testing of Hall effect of semiconductor film and preparation method thereof - Google Patents
Substrate for nondestructive testing of Hall effect of semiconductor film and preparation method thereof Download PDFInfo
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- CN107132497B CN107132497B CN201710291273.XA CN201710291273A CN107132497B CN 107132497 B CN107132497 B CN 107132497B CN 201710291273 A CN201710291273 A CN 201710291273A CN 107132497 B CN107132497 B CN 107132497B
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- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
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- G01R33/12—Measuring magnetic properties of articles or specimens of solids or fluids
- G01R33/1253—Measuring galvano-magnetic properties
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
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Abstract
The invention relates to the field of semiconductor material measuring equipment, in particular to a substrate for nondestructive testing of a semiconductor film Hall effect and a preparation method thereof. The invention deposits the graphical insulating film layer on the polishing substrate, then fills the inner electrode, the outer electrode and the lead in the graphical area. When the Hall effect of the semiconductor film is tested, the upper surface of the inner electrode is in ohmic contact with the lower surface of the tested film, the probe of the Hall effect instrument is in contact with the outer electrode, and the outer electrode and the inner electrode are conducted by the lead. Therefore, the direct contact between the probe of the Hall effect instrument and the surface of the film to be tested can be avoided, and the nondestructive testing is realized.
Description
One, the technical field
The invention relates to the field of semiconductor material measuring equipment, in particular to a substrate for nondestructive testing of a semiconductor film Hall effect and a preparation method thereof.
Secondly, background art:
the hall effect is one of electromagnetic effects, which was discovered by american physicist hall (e.h. hall) in 1879 when studying the conduction mechanism of metals. When a current passes through a conductor perpendicular to an external magnetic field, an additional electric field is generated in a direction perpendicular to the current and the magnetic field, so that a potential difference is generated at two ends of the conductor, which is the hall effect. Later, semiconductors, conductive fluids and the like have been found to have the effect, the hall effect of the semiconductors is much stronger than that of metals, and various hall elements manufactured by utilizing the phenomenon are widely applied to the aspects of industrial automation technology, detection technology, information processing and the like.
The Hall effect has very important significance for analyzing and researching the electrical characteristics of semiconductor materials. The Hall effect measurement can be used for not only calculating the Hall coefficient, judging the conductivity type of the semiconductor material and calculating the carrier concentration, the mobility or the conductivity, but also calculating the forbidden bandwidth and the impurity ionization energy of the semiconductor from the variable-temperature Hall effect in the range from the low-temperature impurity weak ionization region to the high-temperature intrinsic excitation temperature.
In the measurement of the hall effect of semiconductor thin films, semiconductor material is generally deposited on an insulating square substrate, the side length of the substrate is about 5-15mm, the thickness of the substrate is generally not more than 3mm, and then contact material is dotted on the middle of four sides or four corners of a sample, and pure indium particles are generally used. And after sample preparation is finished, welding four contacts of the sample on a sample rack by using thin copper wires or directly contacting the four contacts with a probe, and measuring on a Hall effect measuring instrument. However, hall effect testing of semiconductor thin film samples, whether copper wire bonding or probe contact, is deficient. The welding of the copper wire requires higher temperature, so that the local performance of the film sample is changed, and the measured value is inaccurate; probe contact can scratch the sample for relatively soft semiconductor thin film materials, causing the thin film to break or be pierced. These are the most common problems in the testing of hall effect on semiconductor thin film samples.
Third, the invention
The invention provides a substrate for nondestructive testing of a semiconductor film Hall effect and a preparation method thereof, wherein a sample prepared by the substrate can not damage the film property or the film structure when the Hall effect is tested.
In order to achieve the purpose, the invention adopts the technical scheme that: a substrate for nondestructive testing of semiconductor thin film Hall effect comprises a base, wherein the base is square, and the side length is 5-15mm, and the substrate is characterized in that: the testing device is characterized by further comprising an insulating film layer and testing electrodes, wherein the patterned insulating film layer is embedded on the substrate, the testing electrodes are filled in the patterned insulating film layer and comprise inner electrodes, outer electrodes and leads, the outer electrodes and the inner electrodes are conducted through the leads, and the two groups of testing electrodes are arranged at the four corners of the substrate and the center positions of the four sides of the substrate respectively.
The substrate is made of polished silicon wafers, glass, quartz or ceramics, and the thickness of the substrate is not more than 2 mm;
the insulating film layer is made of an inorganic insulating material or an organic insulating material, the inorganic insulating material is silicon oxide or aluminum oxide, and the organic insulating material is polytetrafluoroethylene; the thickness of the insulating film layer is 1-2 μm;
the shape of the outer electrode is round or regular polygon, the diameter or diagonal length of the outer electrode is 0.5-2mm, the outer electrodes are distributed in the middle of four corners and four sides of the substrate, and the center distance b of the outer electrodes at two ends on one axis is 4-14 mm;
the inner electrodes are round or regular polygon in shape, the diameter or diagonal length of the inner electrodes is 0.25-1mm, the inner electrodes are distributed at corresponding positions of the outer electrodes, and the center distance a between the inner electrodes at two ends on one axis is 2-7 mm;
the width of the lead wire is 0.25-0.5 mm.
The inner electrode, the outer electrode and the lead are respectively made of metal with good conductivity and acid and alkali corrosion resistance, the thickness of the inner electrode, the thickness of the outer electrode and the thickness of the lead are 500nm-1 mu m, and the upper surfaces of the inner electrode, the outer electrode and the lead are flush with the upper surface of the insulating film layer.
A preparation method of a substrate for nondestructive testing of semiconductor film Hall effect comprises the following steps: the insulating film layer is deposited on the substrate by thermal evaporation or magnetron sputtering; spin-coating the photoresist on the insulating film layer at a spin-coating rate of 1000-; according to the designed electrode and lead pattern, adopting a mask plate to carry out exposure treatment on the photoresist in the pattern region under ultraviolet light for 10-15 seconds, then immersing the exposed sample wafer into a developing solution for 10-15 seconds, removing the photoresist in the exposed part in the pattern region, and then placing the sample wafer at the temperature of 100 ℃ and 130 ℃ for hardening treatment; processing the sample wafer after hardening by adopting plasma or chemical wet etching, and etching the insulating layer in the pattern area to the designed depth by controlling the etching rate; depositing a metal layer in the pattern area by thermal evaporation or magnetron sputtering to form an inner electrode, an outer electrode and a lead, and controlling the deposition rate to ensure that the surface of the metal layer is basically flush with the upper surface of the insulating film layer; and finally, immersing the sample into an organic solvent to remove the residual photoresist, and polishing the surface to keep the surfaces of the outer electrode, the inner electrode, the lead and the insulating film layer on the same plane, thereby completing the preparation of the substrate.
Compared with the prior art, the invention has the following advantages and effects:
1) the invention adopts the design of the embedded detection electrode, compared with the traditional test method, the direct contact between the probe of the Hall tester and the tested film can be avoided, and the nondestructive test of the Hall effect of the semiconductor film can be realized;
2) the inner electrode is directly coupled to the substrate, and the thin film to be detected can form good ohmic contact with the inner electrode after being deposited on the substrate;
3) the invention keeps the surfaces of the outer electrode, the inner electrode, the lead and the insulating film layer on the same plane by controlling the preparation process of the substrate and adopting the polishing process, can realize the uniform deposition of the film to be tested on the substrate and improve the testing precision;
4) the invention designs two groups of test electrodes, namely one group of four corners of the substrate and one group of four sides of the substrate, and when one group of the test electrodes has problems, the other group of the test electrodes can be selected for testing;
5) the invention adopts the metal electrode with good conductivity and acid and alkali corrosion resistance to realize the repeated use of the substrate.
Fourthly, explanation of the attached drawings:
FIG. 1 is a layout of a nondestructive testing semiconductor thin film Hall effect substrate;
FIG. 2 is a cross-sectional view of FIG. 1;
FIG. 3 is a pictorial representation of a non-destructive inspection of a semiconductor thin film Hall effect substrate;
FIG. 4 is a flow chart of a process for non-destructive testing of a semiconductor thin film Hall effect substrate.
Description of reference numerals: 1-substrate, 2-insulating film layer, 3-inner electrode, 4-outer electrode, 5-lead.
Fifth, detailed description of the invention
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
A substrate for nondestructive testing of a semiconductor film Hall effect comprises a substrate 1, wherein the substrate 1 is square, and further comprises an insulating film layer 2 and test electrodes, the substrate 1 is embedded with a graphical insulating film layer 2, the graphical insulating film layer 2 is filled with the test electrodes, the test electrodes comprise inner electrodes 3, outer electrodes 4 and leads 5, the outer electrodes 4 and the inner electrodes 3 are conducted through the leads 5, the test electrodes are provided with two groups, each group comprises 4 electrodes and is respectively arranged at the four corners of the substrate and the centers of the four sides of the substrate.
The preparation method of the substrate for nondestructive testing of the Hall effect of the semiconductor film comprises the following steps (see figure 4): the insulating film layer 2 is deposited on the substrate 1 by thermal evaporation or magnetron sputtering; spin-coating the photoresist on the insulating film layer 2 at a spin-coating rate of 1000-; according to the designed electrode and lead pattern, adopting a mask plate to carry out exposure treatment on the photoresist in the pattern region under ultraviolet light for 10-15 seconds, then immersing the exposed sample wafer into a developing solution for 10-15 seconds, removing the photoresist in the exposed part in the pattern region, and then placing the sample wafer at the temperature of 100 ℃ and 130 ℃ for hardening treatment; processing the sample wafer after hardening by adopting plasma or chemical wet etching, and etching the insulating layer in the pattern area to the designed depth by controlling the etching rate; depositing a metal layer in the pattern area by thermal evaporation or magnetron sputtering to form an inner electrode 3, an outer electrode 4 and a lead 5, and controlling the deposition rate to ensure that the surface of the metal layer is basically level with the upper surface of the insulating film layer; and finally, immersing the sample into an organic solvent to remove the residual photoresist, and polishing the surface to keep the surfaces of the outer electrode, the inner electrode, the lead and the insulating film layer on the same plane, thereby completing the preparation of the substrate.
The invention embeds a graphical insulating film layer 2 on a polishing substrate 1, and then fills an inner electrode 3, an outer electrode 4 and a lead 5 in a graphical area. The electrode pattern is designed according to Hall effect test requirements, an effective deposition area of a tested film is arranged in a dotted line frame in figures 1 and 2, when the Hall effect of the semiconductor film is tested, the upper surface of the inner electrode 3 is in ohmic contact with the lower surface of the tested film, the Hall effect instrument probe is in contact with the outer electrode 4, the outer electrode 4 and the inner electrode 3 are conducted through the lead 5, and therefore the Hall effect instrument probe can be prevented from being in direct contact with the surface of the tested film, and nondestructive testing is achieved. The substrate for nondestructive testing of the Hall effect of the semiconductor film comprises the following components:
the substrate is square, polished silicon wafers, glass, quartz, ceramics and other materials can be adopted, and the side length of the substrate is as follows: 5-15mm, the thickness is not more than 2 mm;
the insulating film layer can be made of inorganic insulating materials such as silicon oxide and aluminum oxide, and can also be made of organic insulating materials such as polytetrafluoroethylene, and the thickness of the insulating film layer is 1-2 mu m;
the inner electrode, the outer electrode and the lead wire are made of metal with good conductivity and acid and alkali corrosion resistance, such as gold, titanium, platinum and the like, the thickness of the inner electrode, the outer electrode and the lead wire is 500nm-1 μm, and the upper surfaces of the inner electrode, the outer electrode and the lead wire are flush with the upper surface of the insulating film layer;
the shape of the outer electrode can be round, square and any regular polygon, and the diameter of the graph or the length dimension of the diagonal line is as follows: 0.5-2mm, distributed in the middle of four corners and four edges of the substrate, and the center distance b of the outer electrodes is 4-14 mm;
the shape of the inner electrode can be round, square and any regular polygon, and the diameter of the graph or the length size of the diagonal line is as follows: 0.25-1mm, distributed at the corresponding position of the outer electrode, and the center distance a of the inner electrode is 2-7 mm;
the lead wire is connected with the outer electrode and the inner electrode, and the width of the lead wire is 0.25-0.5 mm.
Example 1, a polished silicon wafer was used as a substrate, the side length of the substrate was 12mm, and the thickness was 0.2 mm; the insulating film layer is made of silicon oxide and is deposited to a thickness of 1 mu m; the inner electrode, the outer electrode and the lead are made of metal titanium, and the thickness of the inner electrode, the outer electrode and the lead is 500 nm; the outer electrode is circular, the diameter is 2mm, and the center distance b is 9.5 mm; the inner electrode is circular, the diameter is 1mm, and the center distance a is 5 mm; the lead width was 0.25 mm. Using the substrate to realize Cu2ZnSnS4、TiO2And nondestructive Hall effect testing of semiconductors such as ZnO.
FIG. 3 is a pictorial representation of a substrate fabricated according to the design of example 1.
Claims (2)
1. The substrate for nondestructive testing of the Hall effect of the semiconductor thin film comprises a base (1), wherein the base (1) is square, and the side length of the base (1) is 5-15mm, and the substrate is characterized in that: the testing device is characterized by further comprising an insulating film layer (2) and testing electrodes, wherein the substrate (1) is embedded with the patterned insulating film layer (2), the patterned insulating film layer (2) is filled with the testing electrodes, the testing electrodes comprise inner electrodes (3), outer electrodes (4) and leads (5), the upper surfaces of the inner electrodes (3) are in ohmic contact with the lower surface of a tested film, Hall effect instrument probes are in contact with the outer electrodes (4), the outer electrodes (4) and the inner electrodes (3) are conducted through the leads (5), and the testing electrodes are provided with two groups and are respectively arranged at the four corners of the substrate and the center positions of the four sides of the substrate;
the substrate (1) is made of polished silicon wafers, glass, quartz or ceramics, and the thickness of the substrate is not more than 2 mm;
the insulating film layer (2) is made of an inorganic insulating material or an organic insulating material, the inorganic insulating material is silicon oxide or aluminum oxide, and the organic insulating material is polytetrafluoroethylene; the thickness of the insulating film layer is 1-2 μm;
the shape of the outer electrode (4) is circular or regular polygon, the diameter or diagonal length of the outer electrode is 0.5-2mm, the outer electrodes are distributed in the middle of four corners and four edges of the substrate, and the center distance b between the outer electrodes at two ends on one axis is 4-14 mm;
the inner electrodes (3) are round or regular polygon in shape, the diameter or diagonal length of the inner electrodes is 0.25-1mm, the inner electrodes are distributed at corresponding positions of the outer electrodes, and the center distance a between the inner electrodes at two ends on one axis is 2-7 mm;
the width of the lead (5) is 0.25-0.5 mm;
the inner electrode (3), the outer electrode (4) and the lead (5) are respectively made of metal with good conductivity and acid and alkali corrosion resistance, the thicknesses of the inner electrode, the outer electrode and the lead are 500nm-1 mu m, and the upper surfaces of the inner electrode, the outer electrode and the lead are flush with the upper surface of the insulating film layer.
2. The substrate of claim 1 for nondestructive testing of Hall effect of semiconductor thin filmA method for producing a tablet, characterized by: the preparation method comprises the following steps: the insulating film layer (2) is deposited on the substrate (1) by thermal evaporation or magnetron sputtering; spin coating the photoresist on the insulating film layer (2) at a spin coating rate of 1000-oBaking for 10-30 minutes under C; according to the designed electrode and lead pattern, exposing the photoresist in the pattern region with a mask under ultraviolet light for 10-15 s, immersing the exposed sample wafer in developing solution for 10-15 s, removing the photoresist in the exposed portion of the pattern region, and placing the sample wafer in a developing solution for 100-130 soC, hardening the film; processing the sample wafer after hardening by adopting plasma or chemical wet etching, and etching the insulating layer in the pattern area to the designed depth by controlling the etching rate; depositing a metal layer in the pattern area by adopting thermal evaporation or magnetron sputtering to form an inner electrode (3), an outer electrode (4) and a lead (5), and controlling the deposition rate to ensure that the surface of the metal layer is basically flush with the upper surface of the insulating film layer; and finally, immersing the sample into an organic solvent to remove the residual photoresist, and polishing the surface to keep the surfaces of the outer electrode, the inner electrode, the lead and the insulating film layer on the same plane, thereby completing the preparation of the substrate.
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| CN111913090B (en) * | 2020-07-22 | 2021-04-30 | 杭州电子科技大学 | Non-contact type method for judging conductivity type of semiconductor material |
| CN111896782B (en) * | 2020-08-04 | 2021-10-26 | 河南大学 | Probe and measuring instrument for nondestructive measurement of thin film |
| CN114089159A (en) * | 2021-11-18 | 2022-02-25 | 深圳达沃斯光电有限公司 | Method for preventing golden finger from being scratched during detection of electronic component |
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| EP0548375B1 (en) * | 1991-07-16 | 2001-11-28 | Asahi Kasei Kabushiki Kaisha | Semiconductor sensor and its manufacturing method |
| JP3681425B2 (en) * | 1995-01-24 | 2005-08-10 | 旭化成エレクトロニクス株式会社 | GaAs Hall element |
| JPH09331088A (en) * | 1996-06-11 | 1997-12-22 | Asahi Kasei Denshi Kk | Hole element |
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| CN100437120C (en) * | 2004-11-17 | 2008-11-26 | 中国科学院物理研究所 | Testing electrode of single nanometer materials and production thereof |
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