CN1260830C - 一种与半导体形成欧姆接触的方法 - Google Patents
一种与半导体形成欧姆接触的方法 Download PDFInfo
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- CN1260830C CN1260830C CNB00817914XA CN00817914A CN1260830C CN 1260830 C CN1260830 C CN 1260830C CN B00817914X A CNB00817914X A CN B00817914XA CN 00817914 A CN00817914 A CN 00817914A CN 1260830 C CN1260830 C CN 1260830C
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- silicon
- silver
- temperature
- impurity
- eutectic
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- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 2
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 229910018125 Al-Si Inorganic materials 0.000 description 2
- 229910018520 Al—Si Inorganic materials 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 241000983672 Ficus natalensis Species 0.000 description 2
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- KMWBBMXGHHLDKL-UHFFFAOYSA-N [AlH3].[Si] Chemical compound [AlH3].[Si] KMWBBMXGHHLDKL-UHFFFAOYSA-N 0.000 description 1
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- 230000009471 action Effects 0.000 description 1
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- LGFYIAWZICUNLK-UHFFFAOYSA-N antimony silver Chemical compound [Ag].[Sb] LGFYIAWZICUNLK-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
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- 150000004767 nitrides Chemical class 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
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Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/228—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a liquid phase, e.g. alloy diffusion processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table
- H01L31/0288—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table characterised by the doping material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Inorganic Chemistry (AREA)
- Sustainable Energy (AREA)
- Crystallography & Structural Chemistry (AREA)
- Electrodes Of Semiconductors (AREA)
- Photovoltaic Devices (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US16735899P | 1999-11-23 | 1999-11-23 | |
| US60/167,358 | 1999-11-23 | ||
| US09/538,034 US6632730B1 (en) | 1999-11-23 | 2000-03-29 | Method for self-doping contacts to a semiconductor |
| US09/538,034 | 2000-03-29 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1415119A CN1415119A (zh) | 2003-04-30 |
| CN1260830C true CN1260830C (zh) | 2006-06-21 |
Family
ID=26863088
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB00817914XA Expired - Fee Related CN1260830C (zh) | 1999-11-23 | 2000-11-22 | 一种与半导体形成欧姆接触的方法 |
Country Status (10)
Families Citing this family (76)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7384677B2 (en) * | 1998-06-22 | 2008-06-10 | Target Technology Company, Llc | Metal alloys for the reflective or semi-reflective layer of an optical storage medium |
| US7314657B2 (en) * | 2000-07-21 | 2008-01-01 | Target Technology Company, Llc | Metal alloys for the reflective or the semi-reflective layer of an optical storage medium |
| US7045187B2 (en) * | 1998-06-22 | 2006-05-16 | Nee Han H | Metal alloys for the reflective or the semi-reflective layer of an optical storage medium |
| US6852384B2 (en) * | 1998-06-22 | 2005-02-08 | Han H. Nee | Metal alloys for the reflective or the semi-reflective layer of an optical storage medium |
| US7314659B2 (en) * | 2000-07-21 | 2008-01-01 | Target Technology Company, Llc | Metal alloys for the reflective or semi-reflective layer of an optical storage medium |
| US7374805B2 (en) * | 2000-07-21 | 2008-05-20 | Target Technology Company, Llc | Metal alloys for the reflective or the semi-reflective layer of an optical storage medium |
| US7316837B2 (en) * | 2000-07-21 | 2008-01-08 | Target Technology Company, Llc | Metal alloys for the reflective or the semi-reflective layer of an optical storage medium |
| WO2004066354A2 (en) * | 2003-01-16 | 2004-08-05 | Target Technology Company, Llc | Photo-voltaic cells including solar cells incorporating silver-alloy reflective and/or transparent conductive surfaces |
| EP1560704B1 (en) * | 2003-04-18 | 2012-06-13 | Target Technology Company, LLC. | Metal alloys for the reflective or the semi-reflective layer of an optical storage medium |
| US8664525B2 (en) * | 2003-05-07 | 2014-03-04 | Imec | Germanium solar cell and method for the production thereof |
| US7960645B2 (en) * | 2003-05-07 | 2011-06-14 | Imec | Germanium solar cell and method for the production thereof |
| US7964789B2 (en) * | 2003-05-07 | 2011-06-21 | Imec | Germanium solar cell and method for the production thereof |
| US7170001B2 (en) * | 2003-06-26 | 2007-01-30 | Advent Solar, Inc. | Fabrication of back-contacted silicon solar cells using thermomigration to create conductive vias |
| US7649141B2 (en) * | 2003-06-30 | 2010-01-19 | Advent Solar, Inc. | Emitter wrap-through back contact solar cells on thin silicon wafers |
| JP2005135942A (ja) * | 2003-10-28 | 2005-05-26 | Canon Inc | 電極配設方法 |
| US20050172996A1 (en) * | 2004-02-05 | 2005-08-11 | Advent Solar, Inc. | Contact fabrication of emitter wrap-through back contact silicon solar cells |
| US7144751B2 (en) * | 2004-02-05 | 2006-12-05 | Advent Solar, Inc. | Back-contact solar cells and methods for fabrication |
| US20060060238A1 (en) * | 2004-02-05 | 2006-03-23 | Advent Solar, Inc. | Process and fabrication methods for emitter wrap through back contact solar cells |
| US7335555B2 (en) * | 2004-02-05 | 2008-02-26 | Advent Solar, Inc. | Buried-contact solar cells with self-doping contacts |
| US20060039973A1 (en) * | 2004-08-19 | 2006-02-23 | Mary Aldritt | Effervescent composition including water soluble dietary fiber |
| DE102004044709A1 (de) * | 2004-09-15 | 2006-03-16 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zur gleichzeitigen Rekristalisierung und Dotierung von Halbleiterschichten und nach diesem Verfahren hergestellte Halbleiterschichtsysteme |
| JP4846219B2 (ja) * | 2004-09-24 | 2011-12-28 | シャープ株式会社 | 結晶シリコン太陽電池の製造方法 |
| US20060102228A1 (en) * | 2004-11-12 | 2006-05-18 | Ferro Corporation | Method of making solar cell contacts |
| US7790574B2 (en) | 2004-12-20 | 2010-09-07 | Georgia Tech Research Corporation | Boron diffusion in silicon devices |
| GB2424312B (en) * | 2005-03-14 | 2010-03-03 | Denso Corp | Method of forming an ohmic contact in wide band semiconductor |
| US8093491B2 (en) | 2005-06-03 | 2012-01-10 | Ferro Corporation | Lead free solar cell contacts |
| US7771623B2 (en) * | 2005-06-07 | 2010-08-10 | E.I. du Pont de Nemours and Company Dupont (UK) Limited | Aluminum thick film composition(s), electrode(s), semiconductor device(s) and methods of making thereof |
| US7824579B2 (en) | 2005-06-07 | 2010-11-02 | E. I. Du Pont De Nemours And Company | Aluminum thick film composition(s), electrode(s), semiconductor device(s) and methods of making thereof |
| US20070014963A1 (en) * | 2005-07-12 | 2007-01-18 | Nee Han H | Metal alloys for the reflective layer of an optical storage medium |
| US7718092B2 (en) * | 2005-10-11 | 2010-05-18 | E.I. Du Pont De Nemours And Company | Aluminum thick film composition(s), electrode(s), semiconductor device(s) and methods of making thereof |
| CA2640649A1 (en) * | 2006-02-28 | 2007-09-07 | Ciba Holding Inc. | Antimicrobial compounds |
| US8076570B2 (en) * | 2006-03-20 | 2011-12-13 | Ferro Corporation | Aluminum-boron solar cell contacts |
| US8575474B2 (en) * | 2006-03-20 | 2013-11-05 | Heracus Precious Metals North America Conshohocken LLC | Solar cell contacts containing aluminum and at least one of boron, titanium, nickel, tin, silver, gallium, zinc, indium and copper |
| EP2016528B1 (de) * | 2006-05-04 | 2009-08-26 | Elektrobit Wireless Communications Ltd. | Verfahren zum Betrieb eines RFID-Netzwerks |
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- 2000-11-22 MX MXPA02005186A patent/MXPA02005186A/es not_active Application Discontinuation
- 2000-11-22 EP EP00980763A patent/EP1234342A1/en not_active Withdrawn
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- 2000-11-22 BR BR0015803-8A patent/BR0015803A/pt not_active IP Right Cessation
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| BR0015803A (pt) | 2002-08-13 |
| US20030003693A1 (en) | 2003-01-02 |
| CA2392342A1 (en) | 2001-06-07 |
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| US6632730B1 (en) | 2003-10-14 |
| WO2001041221A1 (en) | 2001-06-07 |
| US6664631B2 (en) | 2003-12-16 |
| AU780960B2 (en) | 2005-04-28 |
| CN1415119A (zh) | 2003-04-30 |
| CA2392342C (en) | 2011-01-04 |
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