CN1257305A - 用于增强半导体化学－机械抛光过程中金属去除率的方法 - Google Patents

用于增强半导体化学－机械抛光过程中金属去除率的方法 Download PDF

Info

Publication number
CN1257305A
CN1257305A CN99126529A CN99126529A CN1257305A CN 1257305 A CN1257305 A CN 1257305A CN 99126529 A CN99126529 A CN 99126529A CN 99126529 A CN99126529 A CN 99126529A CN 1257305 A CN1257305 A CN 1257305A
Authority
CN
China
Prior art keywords
chelating agent
semiconductor wafer
chemical
mechanical polishing
metal barrier
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN99126529A
Other languages
English (en)
Inventor
R·J·舒茨
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of CN1257305A publication Critical patent/CN1257305A/zh
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/7684—Smoothing; Planarisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28568—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising transition metals

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Abstract

一种用于在CMP期间增强金属阻挡层去除率的方法,它包括提供具有绝缘体层、在至少一部分绝缘体层上所形成的金属阻挡层和其上所形成的导电层的半导体晶片,并使该半导体晶片与含有增强金属去除量的至少一种螯合剂的化学－机械抛光浆进行接触。

Description

用于增强半导体化学-机械抛光过程中金属去除率的方法
此处描述了各种用于半导体晶片化学-机械抛光(CMP)期间增强金属去除率的方法。更具体地说，在半导体晶片进行化学-机械抛光期间通过在该化学-机械抛光浆中采用一种螯合剂来增强半导体晶片上金属阻挡层的去除率。
一般而言，半导体晶片包括大量形成集成电路的电路。在一些情况下当在半导体晶片上制作集成电路时在该晶片上形成了一层氧化物层。其后，将该氧化物层加工成其中的电路图槽或孔。接着通过各种技术，如物理汽相淀积(PVD)或化学汽相淀积(CVD)在氧化物层上形成金属阻挡层，如Ti/TiW、Ti/TiN或TaSiN。最后将导电层，如Al、W或Cu淀积于槽或孔内且覆盖阻挡层的上部表面。然后对半导体晶片进行抛光以弄平其表面。在抛光的过程中部分金属阻挡层及导电层从该晶片的上部表面被除去。
一种已知的抛光方法是化学-机械抛光(CMP)法，其中通过采用一种化学-机械抛光设备对半导体晶片进行抛光。如在图1中可见，化学机械抛光设备通常包括用于夹住半导体晶片10的晶片机架15。在抛光期间通过马达17可转动该晶片机架15。通过马达37可转动承载抛光垫片35的CMP抛光压板30。过程中所用的抛光浆可经导管40施加到抛光垫片35上。
一般而言，化学-机械抛光方法包括将半导体晶片10夹在抛光垫片35旋转、湿的抛光表面上。抛光浆用来湿润抛光表面。此浆可包括作为一种化学蚀刻组分与一种研磨剂如氧化铝或二氧化硅颗粒混合的碱性或酸性溶液。在受控的压力下，旋转的抛光头或晶片机架15通常用来将晶片10夹紧在旋转的抛光压板30上。一衬膜任选地位于晶片机架15与晶片之间。抛光压板30通常覆盖一种较软的湿垫片材料，如吹塑聚氨基甲酸乙酯薄膜。
CMP方法的一个缺点是在晶片表面处存在的各种不同材料的抛光速率不同。这些不同的去除率可以是仅仅由于各种材料硬度的不同而造成，也可以是由于抛光浆与各种材料之间化学作用的不同而造成。因而例如，通过研磨作用以及酸性抛光浆可容易地将导电层除去，而金属阻挡层则无法得到去除。这种导电金属层不合需要的、过多的各向同性的去除可留下盘状的向中心的大面积金属。因此无法在晶片表面不同位置上获得包括金属和绝缘体的平面。
美国专利第5,676,587号公开了一种两步CMP法。第一步采用标准的氧化铝基的CMP抛光浆以去除金属阻挡层和导电层，但在接触氧化物层之前停止。第二步采用中性pH的二氧化硅和水或二氧化硅基的CMP溶液以除去剩余的金属阻挡层。
需要提供一种容易完成的、在化学-机械抛光过程中使金属阻挡层和导电层从半导体晶片中去除的速率基本相等以提供在整个晶片表面上包括金属和绝缘体区的平面的CMP方法，或者需要提供一种在上述两步CMP法中增强金属阻挡层去除率的方法。
此处公开一种用于在CMP期间增强半导体晶片上金属阻挡层的去除率而不影响导电层去除率的新方法，包括提供半导体晶片并用含有增强金属去除量的螯合剂的CMP抛光浆抛光半导体晶片的步骤。
在一个特别有用的实施方案中，本方法包括提供一种具有绝缘体层、在至少一部分绝缘体层上所形成的金属阻挡层以及其上所形成的导电层的半导体晶片，并使半导体晶片与含有增强金属去除量的螯合剂的CMP抛光浆进行接触以除去金属阻挡层和导电层。
在另一个特别有用的实施方案中，本方法包括提供一种具有绝缘体层、在至少一部分绝缘体层上所形成的金属阻挡层以及其上所形成的导电层的半导体晶片，并使半导体晶片与第一种CMP抛光浆接触，然后使半导体晶片再与第二种含有增强金属去除量的螯合剂的CMP抛光浆进行接触以除去任何残余部分的金属阻挡层和导电层。
图1显示一种根据先有技术的CMP抛光设备简图。
图2为在其上沉积有金属阻挡层和导电层的半导体底物上形成的绝缘层的断面图，其中具有孔。
图3显示完成根据本公开内容的CMP法后图2的断面图。
图4显示完成根据本公开内容改进(touchup)的CMP法后图3的断面图。
此处所述的新方法包括使一种具有绝缘体层、在至少一部分绝缘体层上所形成的金属阻挡层以及其上所形成的导电层的半导体晶片进行CMP过程。这些方法基于这样一种发现：含有螯合剂的CMP抛光浆在CMP期间将增强金属阻挡层的去除率而不影响导电层的去除率。
参照图2，本方法包括提供一种常规类型的半导体晶片8，可含有如电路系统和其它互连电平。一般而言，半导体晶片8包括具有绝缘体层12的底物10，绝缘体层中有孔25。然后，在绝缘体层12表面上及孔25内形成金属阻挡层14，导电层16淀积于金属阻挡层14的上部表面并填满孔25。用于此三层12、14和16的适宜材料可包括本领域技术人员所公知的任何常规材料。优选的材料包括(但不限于此)用于绝缘体层12的SiO2、PSG或BPSG，用于金属阻挡层14的Ti/TiN和用于导电层16的Al或Cu。在底物10上形成12、14和16各层的各种技术和参数(如化学汽相淀积、物理汽相淀积、时间、温度、厚度等)对于本领域技术人员来说是众所周知的。
通过本领域技术人员所公知的各种技术可在绝缘体层12中形成孔25。例如，可将保护层(图中未示出)施加到绝缘体层12的上部表面。采用已知的照相平板印刷技术构图及显影产生保护层。然后进行蚀刻，如通过采用适宜的各向异性蚀刻技术如活性离子蚀刻技术来形成孔25。每一个孔25的所需宽度通常将根据给定导体载流量要求的不同而异。
为了实施此处所述的新方法，使半导体晶片8进行一标准的CMP抛光过程以优先从绝缘体层12的上部表面中除去金属阻挡层14和导电层16，提供如图4所示的其上部表面基本上在一个平面上的半导体晶片8。一般而言，在抛光过程中将使用一种CMP抛光浆以从晶片8上除去金属阻挡层14和导电层16。这种抛光浆可以是本领域技术人员所公知的任何常规CMP浆。优选用于此处的抛光浆包括任何氧化铝基或二氧化硅基的抛光浆，可以是碱性，也可以是酸性。CMP过程中所用的各种条件如压力的大小和抛光压板的旋转速度对于本领域技术人员来说是众所周知的。
在CMP抛光步骤期间，金属阻挡层14的抛光速率低于导电层16的抛光速率。因此，当将金属阻挡层14和导电层16基本除去时，在绝缘体层12的上部表面可存在残余的金属阻挡层14，如Ti/TiN材料(参见图3)。因此，必须进行第二个CMP处理步骤(通常称为改进的CMP步骤)以将任何残余物从裸露的绝缘体层12以及孔25中裸露的导电材料的上部表面中除去，以提供其上部表面基本上在一个平面上的半导体晶片8(参见图4)。
当在晶片8上使用CMP方法时，无论是在第一次CMP步骤还是在改进的CMP步骤中，都使含有金属去除增强量的螯合剂的CMP抛光浆与晶片8的上部表面即导电层16进行接触。高度优先采用螯合剂，因该螯合剂不会增加或降低抛光浆的pH。在CMP过程中晶片8可与螯合剂接触以基本上将金属阻挡层14和导电层16作为CMP抛光浆的一部分除去，或者，如上述在改进的CMP步骤中与CMP抛光浆同时接触以去除晶片8上部表面上的任何残余物。
此处可用的螯合剂包括各种聚磷酸盐，如三聚磷酸钠和hexenetaphosphoric acid；各种氨基羧酸，如乙二胺四乙酸(EDTA)、羟乙基乙二胺三乙酸(HEDTA)、次氮基三乙酸(NTA)、N-二羟基乙基甘氨酸和亚乙基双(羟基苯基甘氨酸)(EHPG)；各种1，3-二酮，如乙酰丙酮、三氟乙酰丙酮和噻吩甲酰三氟丙酮(TTA)；各种羟基羧酸，如酒石酸、柠檬酸、葡糖酸和5-磺基水杨酸；各种多胺，如乙二胺、三乙二胺和三氨基三乙胺；各种氨基醇，如三乙醇胺(TEA)和N-羟基乙基乙二胺；各种芳族杂环碱，如联吡啶和邻-菲咯琳；各种酚类，如水杨醛、disulfopyroacetechol和铬变酸；各种氨基酚类，如喔星、8-羟基喹啉和喔星磺酸；肟(oxines)，如二甲基乙二肟和水杨醛肟；各种席夫碱，如二水杨醛、1，2-丙二亚胺；各种四吡咯，如四苯基卟吩和酞菁；各种含硫化合物，如甲苯二硫酚、二巯基丙醇、巯基乙酸、乙基黄原酸钾、二乙基二硫代氨基甲酸钠、双硫腙、二乙基二硫代磷酸和硫脲；各种合成的大环化合物，如二苯并〔18〕冠(醚)-6、(CH3)6〔14〕4，11-二烯N4和(2.2.2-穴状化合物)；各种聚合螯合剂，如聚乙烯亚胺、聚异丁烯酰基丙酮和聚(对-乙烯基苄基亚氨基二乙酸)；以及各种膦酸，如次氮基亚甲基膦酸、乙二胺四(亚甲基膦酸)和羟基亚乙基二膦酸。此处所用的优选螯合剂为乙二胺四乙酸、羟乙基乙二胺三乙酸、次氮基三乙酸、N-二羟基乙基甘氨酸和亚乙基双(羟基苯基甘氨酸)，更优选为乙二胺四乙酸。
与晶片8接触的螯合剂的量应为增强金属去除的量。构成螯合剂增强金属去除量将取决于一系列因素，例如具体所用的螯合剂、晶片8的大小以及晶片8的组成和表面特性。增强金属去除量通常为约0.1％-约30％(重量)、优选为约1％-约20％(重量)、更优选为约2％-约10％(重量)。当在CMP抛光浆中使用螯合剂以除去任何残余物时，晶片8应与螯合剂抛光浆接触约5-约300秒、优选约20-约100秒。当去除金属阻挡层14和导电层16时，虽非关键的要求，但晶片8应与螯合剂抛光浆接触约5-约400秒、优选约20-约300秒、更优选约100-约200秒。与螯合剂抛光浆接触期间的温度无需加以精确控制，但通常可在约0℃-约50℃、更优选在约10℃-约20℃的范围内。
虽然本发明以优选的方式带有一定程度的特殊性做了描述，但本领域技术人员在阅读了以上描述后，其中的许多可能的改变及变更将变得显而易见。因此应理解的是，在不背离本发明精神及范畴的前提下除了如此处所具体描述的之外，还可以其它方式实施本发明。

Claims (22)

1.一种在半导体晶片的化学-机械抛光期间用于增强金属阻挡层金属去除率的方法，它包括：
a)提供一种具有绝缘体层、在至少一部分绝缘体层上所形成的金属阻挡层和其上所形成的导电层的半导体晶片；和
b)使该半导体晶片与第一种含有增强金属去除量的至少一种螯合剂的化学-机械抛光浆进行接触。
2.权利要求1的方法，其中所述绝缘体层为SiO2。
3.权利要求1的方法，其中所述金属阻挡层为Ti/TiN。
4.权利要求1的方法，其中所述导电层选自Al和Cu。
5.权利要求1的方法，其中所述螯合剂为一种氨基羧酸。
6.权利要求5的方法，其中所述氨基羧酸选自乙二胺四乙酸、羟乙基乙二胺三乙酸、次氮基三乙酸、N-二羟基乙基甘氨酸和亚乙基双(羟基苯基甘氨酸)。
7.权利要求1的方法，其中所述抛光浆含有约0.1％-约30％(重量)的螯合剂。
8.权利要求6的方法，其中所述抛光浆含有约0.1％-约30％(重量)的氨基羧酸。
9.权利要求1的方法，还包括使所述半导体晶片与第二种化学-机械抛光浆进行接触的步骤。
10.权利要求9的方法，其中第二种化学-机械抛光浆含有增强金属去除量的至少一种螯合剂。
11.权利要求10的方法，其中所述螯合剂为乙二胺四乙酸。
12.权利要求10的方法，其中所述抛光浆含有约0.1％-约30％(重量)的螯合剂。
13.一种在半导体晶片的化学-机械抛光期间用于增强金属阻挡层金属去除率的方法，它包括：
a)提供具有绝缘体层、金属阻挡层和其上所形成的导电层的半导体晶片；
b)使半导体晶片与第一种化学-机械抛光浆进行接触；和
c)使半导体晶片与第二种化学-机械抛光浆进行接触，第二种化学-机械抛光浆含有增强金属去除量的至少一种螯合剂。
14.权利要求13的方法，其中所述绝缘体层为SiO2。
15.权利要求13的方法，其中所述金属阻挡层为Ti/TiN。
16.权利要求13的方法，其中所述导电层选自Al和Cu。
17.权利要求13的方法，其中所述螯合剂为一种氨基羧酸。
18.权利要求17的方法，其中所述氨基羧酸选自乙二胺四乙酸、羟乙基乙二胺三乙酸、次氮基三乙酸、N-二羟基乙基甘氨酸和亚乙基双(羟基苯基甘氨酸)。
19.权利要求13的方法，其中第二种抛光浆含有约0.1％-约30％(重量)的螯合剂。
20.在一种化学-机械抛光方法中，其中抛光浆施用于抛光垫片上并夹住半导体晶片与该抛光垫片接触，其改进包括：
将一种螯合剂掺入到抛光浆中。
21.权利要求20的方法，其中所述螯合剂为一种氨基羧酸。
22.权利要求21的方法，其中所述氨基羧酸选自乙二胺四乙酸、羟乙基乙二胺三乙酸、次氮基三乙酸、N-二羟基乙基甘氨酸和亚乙基双(羟基苯基甘氨酸)。
CN99126529A 1998-12-17 1999-12-16 用于增强半导体化学－机械抛光过程中金属去除率的方法 Pending CN1257305A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/213,469 US6136714A (en) 1998-12-17 1998-12-17 Methods for enhancing the metal removal rate during the chemical-mechanical polishing process of a semiconductor
US09/213,469 1998-12-17

Publications (1)

Publication Number Publication Date
CN1257305A true CN1257305A (zh) 2000-06-21

Family

ID=22795239

Family Applications (1)

Application Number Title Priority Date Filing Date
CN99126529A Pending CN1257305A (zh) 1998-12-17 1999-12-16 用于增强半导体化学－机械抛光过程中金属去除率的方法

Country Status (7)

Country Link
US (1) US6136714A (zh)
EP (1) EP1011131B1 (zh)
JP (1) JP2000183004A (zh)
KR (1) KR100693640B1 (zh)
CN (1) CN1257305A (zh)
DE (1) DE69936625T2 (zh)
TW (1) TW466640B (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101434894B (zh) * 2001-10-23 2012-02-01 高级技术材料公司 用于清洗半导体基质上无机残渣含有铜特效腐蚀抑制剂的含水清洗组合物
CN103474395A (zh) * 2013-09-13 2013-12-25 华进半导体封装先导技术研发中心有限公司 一种tsv平坦化方法

Families Citing this family (50)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6068879A (en) * 1997-08-26 2000-05-30 Lsi Logic Corporation Use of corrosion inhibiting compounds to inhibit corrosion of metal plugs in chemical-mechanical polishing
SG73683A1 (en) 1998-11-24 2000-06-20 Texas Instruments Inc Stabilized slurry compositions
JP4516176B2 (ja) * 1999-04-20 2010-08-04 関東化学株式会社 電子材料用基板洗浄液
US6573173B2 (en) 1999-07-13 2003-06-03 Motorola, Inc. Method for forming a copper interconnect using a multi-platen chemical mechanical polishing (CMP) process
US6274478B1 (en) * 1999-07-13 2001-08-14 Motorola, Inc. Method for forming a copper interconnect using a multi-platen chemical mechanical polishing (CMP) process
WO2001012739A1 (en) * 1999-08-13 2001-02-22 Cabot Microelectronics Corporation Chemical mechanical polishing systems and methods for their use
US6855266B1 (en) * 1999-08-13 2005-02-15 Cabot Microelectronics Corporation Polishing system with stopping compound and method of its use
US6656842B2 (en) 1999-09-22 2003-12-02 Applied Materials, Inc. Barrier layer buffing after Cu CMP
US6436830B1 (en) * 1999-10-06 2002-08-20 Agere Systems Guardian Corp. CMP system for polishing semiconductor wafers and related method
US6458289B1 (en) 1999-10-06 2002-10-01 Agere Systems Guardian Corp. CMP slurry for polishing semiconductor wafers and related methods
US6368955B1 (en) * 1999-11-22 2002-04-09 Lucent Technologies, Inc. Method of polishing semiconductor structures using a two-step chemical mechanical planarization with slurry particles having different particle bulk densities
US6638143B2 (en) 1999-12-22 2003-10-28 Applied Materials, Inc. Ion exchange materials for chemical mechanical polishing
US6881674B2 (en) * 1999-12-28 2005-04-19 Intel Corporation Abrasives for chemical mechanical polishing
JP2001269859A (ja) * 2000-03-27 2001-10-02 Jsr Corp 化学機械研磨用水系分散体
US6858540B2 (en) * 2000-05-11 2005-02-22 Applied Materials, Inc. Selective removal of tantalum-containing barrier layer during metal CMP
US6524167B1 (en) 2000-10-27 2003-02-25 Applied Materials, Inc. Method and composition for the selective removal of residual materials and barrier materials during substrate planarization
US6709316B1 (en) * 2000-10-27 2004-03-23 Applied Materials, Inc. Method and apparatus for two-step barrier layer polishing
JP2002164307A (ja) 2000-11-24 2002-06-07 Fujimi Inc 研磨用組成物およびそれを用いた研磨方法
US6350692B1 (en) 2000-12-14 2002-02-26 Infineon Technologies Ag Increased polish removal rate of dielectric layers using fixed abrasive pads
KR100407296B1 (ko) * 2000-12-18 2003-11-28 주식회사 하이닉스반도체 티타늄알루미늄나이트라이드의 화학적기계적연마 방법
US7012025B2 (en) * 2001-01-05 2006-03-14 Applied Materials Inc. Tantalum removal during chemical mechanical polishing
US6783432B2 (en) 2001-06-04 2004-08-31 Applied Materials Inc. Additives for pressure sensitive polishing compositions
US6482732B1 (en) * 2001-06-29 2002-11-19 Oki Electric Industry Co., Ltd. Method and apparatus for polishing semiconductor wafer
US6790768B2 (en) 2001-07-11 2004-09-14 Applied Materials Inc. Methods and apparatus for polishing substrates comprising conductive and dielectric materials with reduced topographical defects
US7104869B2 (en) * 2001-07-13 2006-09-12 Applied Materials, Inc. Barrier removal at low polish pressure
US7008554B2 (en) * 2001-07-13 2006-03-07 Applied Materials, Inc. Dual reduced agents for barrier removal in chemical mechanical polishing
US6821881B2 (en) * 2001-07-25 2004-11-23 Applied Materials, Inc. Method for chemical mechanical polishing of semiconductor substrates
US6805812B2 (en) 2001-10-11 2004-10-19 Cabot Microelectronics Corporation Phosphono compound-containing polishing composition and method of using same
JP4010903B2 (ja) * 2002-08-02 2007-11-21 Ｎｅｃエレクトロニクス株式会社 化学的機械的研磨用スラリー
US7037174B2 (en) * 2002-10-03 2006-05-02 Applied Materials, Inc. Methods for reducing delamination during chemical mechanical polishing
US20040154931A1 (en) * 2003-02-12 2004-08-12 Akihisa Hongo Polishing liquid, polishing method and polishing apparatus
USPP17182P3 (en) * 2003-10-02 2006-11-07 Plantas De Navarra S.A. Peach tree plant named ‘Plawhite 5’
US20050076579A1 (en) * 2003-10-10 2005-04-14 Siddiqui Junaid Ahmed Bicine/tricine containing composition and method for chemical-mechanical planarization
US7390744B2 (en) 2004-01-29 2008-06-24 Applied Materials, Inc. Method and composition for polishing a substrate
US7253111B2 (en) * 2004-04-21 2007-08-07 Rohm And Haas Electronic Materials Cmp Holding, Inc. Barrier polishing solution
US20050252547A1 (en) * 2004-05-11 2005-11-17 Applied Materials, Inc. Methods and apparatus for liquid chemical delivery
TW200613092A (en) * 2004-08-27 2006-05-01 Ebara Corp Polishing apparatus and polishing method
US20070205112A1 (en) * 2004-08-27 2007-09-06 Masako Kodera Polishing apparatus and polishing method
JP4027929B2 (ja) * 2004-11-30 2007-12-26 花王株式会社 半導体基板用研磨液組成物
US7947639B2 (en) * 2004-12-10 2011-05-24 Avantor Performance Materials, Inc. Non-aqueous, non-corrosive microelectronic cleaning compositions containing polymeric corrosion inhibitors
US7939482B2 (en) * 2005-05-25 2011-05-10 Freescale Semiconductor, Inc. Cleaning solution for a semiconductor wafer
KR20070041330A (ko) * 2005-10-14 2007-04-18 가오가부시끼가이샤 반도체 기판용 연마액 조성물
FR2898906B1 (fr) * 2006-03-21 2008-05-16 Kemesys Composition de polissage mecano chimique incluant un alkylxanthate, procede de preparation et utilisation
WO2008023214A1 (en) * 2006-08-23 2008-02-28 Freescale Semiconductor, Inc. Rinse formulation for use in the manufacture of an integrated circuit
JP2008074990A (ja) * 2006-09-22 2008-04-03 Nihon Micro Coating Co Ltd 研磨スラリー及び方法
TWI446425B (zh) * 2007-08-29 2014-07-21 Applied Materials Inc 高生產量及低表面形貌的銅化學機械研磨製程
JP5379441B2 (ja) * 2008-10-09 2013-12-25 関東化学株式会社 基板処理用アルカリ性水溶液組成物
JP5767898B2 (ja) * 2011-08-12 2015-08-26 株式会社東芝 半導体装置の製造方法
KR102544643B1 (ko) * 2015-12-23 2023-06-19 솔브레인 주식회사 연마 슬러리 조성물 및 이를 이용한 연마방법
KR101698168B1 (ko) * 2016-06-02 2017-01-20 에버테크노 주식회사 Agv를 이용한 번인 랙 이송장치

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5084071A (en) * 1989-03-07 1992-01-28 International Business Machines Corporation Method of chemical-mechanical polishing an electronic component substrate and polishing slurry therefor
US5340370A (en) * 1993-11-03 1994-08-23 Intel Corporation Slurries for chemical mechanical polishing
JP3397501B2 (ja) * 1994-07-12 2003-04-14 株式会社東芝 研磨剤および研磨方法
JPH0982668A (ja) * 1995-09-20 1997-03-28 Sony Corp 研磨用スラリー及びこの研磨用スラリーを用いる研磨方法
US5700383A (en) * 1995-12-21 1997-12-23 Intel Corporation Slurries and methods for chemical mechanical polish of aluminum and titanium aluminide
US5858813A (en) * 1996-05-10 1999-01-12 Cabot Corporation Chemical mechanical polishing slurry for metal layers and films
KR100257427B1 (ko) * 1996-05-31 2000-05-15 아사무라 타카싯 반도체기판표면을연마하여평탄한표면형상을형성하기위한반도체기판연마방법
US5783489A (en) * 1996-09-24 1998-07-21 Cabot Corporation Multi-oxidizer slurry for chemical mechanical polishing
US5735963A (en) * 1996-12-17 1998-04-07 Lucent Technologies Inc. Method of polishing
US6001269A (en) * 1997-05-20 1999-12-14 Rodel, Inc. Method for polishing a composite comprising an insulator, a metal, and titanium

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101434894B (zh) * 2001-10-23 2012-02-01 高级技术材料公司 用于清洗半导体基质上无机残渣含有铜特效腐蚀抑制剂的含水清洗组合物
CN103474395A (zh) * 2013-09-13 2013-12-25 华进半导体封装先导技术研发中心有限公司 一种tsv平坦化方法
CN103474395B (zh) * 2013-09-13 2016-08-24 华进半导体封装先导技术研发中心有限公司 一种tsv平坦化方法

Also Published As

Publication number Publication date
KR20000048170A (ko) 2000-07-25
DE69936625T2 (de) 2008-01-31
US6136714A (en) 2000-10-24
EP1011131A1 (en) 2000-06-21
JP2000183004A (ja) 2000-06-30
DE69936625D1 (de) 2007-09-06
EP1011131B1 (en) 2007-07-25
KR100693640B1 (ko) 2007-03-14
TW466640B (en) 2001-12-01

Similar Documents

Publication Publication Date Title
CN1257305A (zh) 用于增强半导体化学－机械抛光过程中金属去除率的方法
US6800218B2 (en) Abrasive free formulations for chemical mechanical polishing of copper and associated materials and method of using same
US5302233A (en) Method for shaping features of a semiconductor structure using chemical mechanical planarization (CMP)
US6787473B2 (en) Post-planarization clean-up
US5786275A (en) Process of fabricating wiring structure having metal plug twice polished under different conditions
US7427567B2 (en) Polishing slurries for copper and associated materials
US6569349B1 (en) Additives to CMP slurry to polish dielectric films
US6656842B2 (en) Barrier layer buffing after Cu CMP
US7052625B2 (en) Slurry and use thereof for polishing
EP0870577A2 (en) Method for dressing a polishing pad, polishing apparatus, and method for manufacturing a semiconductor apparatus
US20020061635A1 (en) Solution for chemical mechanical polishing and method of manufacturing copper metal interconnection layer using the same
US20080045021A1 (en) Dual reduced agents for barrier removal in chemical mechanical polishing
JP2001156029A (ja) 少ない欠陥のための後ＣｕＣＭＰ
US6858540B2 (en) Selective removal of tantalum-containing barrier layer during metal CMP
US20020151177A1 (en) Method of reducing in-trench smearing during polishing
US6736701B1 (en) Eliminate broken line damage of copper after CMP
JP3872925B2 (ja) 研磨装置および半導体装置の製造方法
US6572453B1 (en) Multi-fluid polishing process
US6534407B2 (en) Method for reducing dishing effects during a chemical mechanical polishing process
CN1437763A (zh) 化学机械抛光用研磨剂
US6287172B1 (en) Method for improvement of tungsten chemical-mechanical polishing process
KR100596768B1 (ko) 반도체장치의 화학기계적연마 방법
KR100257427B1 (ko) 반도체기판표면을연마하여평탄한표면형상을형성하기위한반도체기판연마방법
CN101584028A (zh) 制造半导体器件的方法、由此获得的半导体器件和适合该方法中使用的浆料
JPH11176777A (ja) 半導体装置の製造方法

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C12 Rejection of a patent application after its publication
RJ01 Rejection of invention patent application after publication