CN1254434A - 稳定性提高的磁阻传感器 - Google Patents
稳定性提高的磁阻传感器 Download PDFInfo
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- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/29—Structure or manufacture of unitary devices formed of plural heads for more than one track
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
- G11B5/3967—Composite structural arrangements of transducers, e.g. inductive write and magnetoresistive read
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
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- G11B5/3113—Details for improving the magnetic domain structure or avoiding the formation or displacement of undesirable magnetic domains
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Abstract
磁性存储装置(10)中的换能器(56)包括具有有效区(65)的细长磁阻元件(64)。第一和第二电触点(66)在有效区(65)的两侧耦合到细长磁阻元件(64)。底部感应写磁极和共享屏蔽(72)靠近于细长磁阻元件(64)且包括主体区(122)和靠近有效区(65)的磁极尖端区(120)。共享屏蔽(72)包括在磁极尖端区(120)和主体区(122)之间限定的凹槽(124),从而提高磁极尖端区(120)中的磁稳定性。顶部感应写磁极(79)与底部感应写磁极和共享屏蔽(72)隔开以形成磁隙缝,磁极尖端区(120)由于感应地写信息。
Description
背景技术
本发明涉及磁阻(MR)传感器,尤其是,本发明涉及操作期间的稳定性提高的磁阻传感器。
使用磁性存储系统以磁性格式来存储信息,以便在以后检索。可利用各种技术来回读所存储的信息。一种有希望的技术是使用磁阻传感器来进行这种回读。
磁阻传感器响应于存在的磁场所引起的电阻率变化,并日益被用作磁盘驱动器的磁头中的读回元件。它们特别有用,因为电阻率的变化与盘片速度无关,而只与磁通量有关。此外,容易通过调节读出电流对传感器输出进行定标。
磁阻传感器通常包括诸如沿矫顽磁力低的平缓(easy)轴磁化的NiFe等铁磁材料形成的细条。把此细条安装在磁头中,从而平缓轴横过盘片旋转方向且平行于盘片平面。来自盘片表面的磁通量引起细条的磁化矢量旋转,继而及其电阻率的变化。读出电流通过细条,可通过测量因电阻率变化的结果而在元件两端引起的电压变化来检测磁通量。
磁阻传感器遇到的一个问题是Barkhausen噪声,它是由所加的磁场中磁畴(domain)的不可逆运动而引起的,即磁化矢量的相干(coherent)旋转是不均匀的且受到抑制,并与畴壁性能有关。可通过在磁阻条的读出电流区域中产生单个磁畴来消除磁阻元件中所产生Barkhausen噪声。在Mowry于1989年2月7日提交的名为DOUBLE-GAP MAGNETORESISTIVE HEAD HAVING ANELONGATED CENTRAL WRITE/SHIELD POLE COMPLETELY SHIELDINGTHE MAGNETORESISTIVE SENSOR STRIP IN THE READ GAP的4,803,480号美国专利中描述了减少磁阻元件中所产生的这种Barkhausen噪声。
发明内容
在本发明的一个方面,磁性存储装置中的换能器包括具有有效(active)区的细长磁阻元件。第一和第二电触点在有效区的两侧上电气耦合到此细长的磁阻元件。可通过此电触点从磁性存储媒体中读取信息。底部感应写磁极和共享屏蔽位于磁阻元件附近且具有靠近有效区的主体区和磁极尖端区。底部感应写磁极和共享屏蔽包括在其中形成的限定磁极尖端区和主体区的凹槽(notch)。此凹槽在共享屏蔽提供了磁畴结构,这样提高了稳定性。顶部感应写头磁极与底部感应写磁极和共享屏蔽隔开,以在其间形成用于以磁性方式写信息的磁隙(gap)。
附图概述
图1是盘片驱动存储系统的简化图。
图2是依据本发明的磁阻换能器的侧剖面图,该换能器包括底部感应写磁极和共享屏蔽。
图3是图2的磁阻换能器的正视图。
图4是已有技术的共享屏蔽的俯视图。
图5是依据本发明的底部感应写磁极和共享屏蔽的俯视图。
图6是依据本发明另一方面的多个底部感应写磁极和共享屏蔽的俯视图。
本发明的较佳实施方式
本发明提供了一种可靠性提高的磁阻传感器。在本发明的一个方面,确认Barkhausen噪声源是在具有感应写元件的磁阻换能器中形成下部磁极的共享屏蔽。
图1是盘片驱动器10的俯视图,它包括依本发明的磁阻传感器。盘片驱动器10包括安装为绕壳体16内的主轴14限定的轴旋转移动的磁盘12。盘片驱动器10包还包括安装到壳体16的基板20并可相对于盘片14绕轴22作枢轴移动的传动器18。盖子24覆盖传动器18的一部分。驱动控制器26耦合到传动器18。在较佳实施例中,驱动控制器26可安装在盘片驱动器10内,也可位于盘片驱动器10外而适当地连接到传动器18.传动器18包括传动器臂组件28、刚性支撑部件30和磁头常平架(gimbal)组件32。磁头常平架组件32包括耦合到刚性部件30的负重梁或曲臂34以及通过常平架(未示出)耦合到负重梁34的气动式支承架(滑块)36。滑块36支撑磁阻换能器,以从盘片12中读取信息并对盘片上的信息进行编码。
在操作期间,驱动控制器26接收指示将被访问的盘片12一部分的位置信息。驱动控制器26从主机计算机或其它适当的控制器接收来自操作人员的位置信息。根据此位置信息,驱动控制器26把一位置信号提供给传动器18。此位置信号使传动器18绕轴22作枢轴转动。这继而引起滑块36(随后是安装在滑块36上的换能器)在盘片表面上沿箭头38所示基本上为弧形的路径径向移动。驱动控制器26和传动器18以公知的闭环负反馈方式进行操作,从而滑块36所携带的换能器定位于盘片12的所需部分上。一旦换能器被适当地定位,驱动控制器26就执行所需的读或写操作。
图2是滑块36上所携带的磁阻换能器56的元件剖面图。把一层氧化物(最好是氧化铝)62淀积在软磁性衬底60(最好是NiZn)上。接着,把磁阻传感器材料64淀积在磁场中并构图。(然后,可根据需要淀积交换偏置材料并构图)。然后,把金属触点66淀积在磁阻条64上。然后淀积第二层氧化物68。这两个氧化物层62和58包括读隙缝。然后,如图所示淀积一层聚酰胺或光致抗蚀剂70并构图,以除去靠近头的隙缝端的层。接着,铺设一层铁磁材料70,最好是NiFe(坡莫合金(Permalloy))。该层70包括后部(trailing)磁极/屏蔽。接着,淀积写隙缝氧化物75(氧化铝或二氧化硅),接着是第二层聚酰胺或光致抗蚀剂74。淀积金属线圈78并构图。淀积两层聚酰胺或光致抗蚀剂76并构图,以除去不靠近线圈78的部分。最后,淀积最后一层铁磁材料,以形成顶部感应写头磁极79、环绕线圈并接触另一个铁磁层底部感应写磁极和共享屏蔽72,以形成感应写头58。屏蔽72最好由坡莫合金来形成。
图3是图2的换能器56的元件端面图。为了清楚,省略了间隔层。图中示出铁氧体衬底60、磁阻条64、其横向金属触点66(限定长度为L的中央传感器有效区65)、铁磁后部磁极/屏蔽72和引导磁极79。如图所示,引导磁极79的长度通过磁镜与后部磁极/屏蔽一起来限定被写磁道的宽度。此长度对应于磁阻条64的中央区65的长度L(加上一处理防护带,其中长度L故意小于被写磁道的宽度,以防止可能的交扰(cross talk)),通常,磁阻条比磁道宽度长,从而有助于提供稳定中央区的单个畴。后部磁极/屏蔽72必须与磁阻传感器64一样长,以把它完全屏蔽于写处理期间产生的侧边缘场。这使得引导与后部磁极79、72有不同的长度。但已发现,这不会影响被写磁道的宽度,它是由引导磁极79的长度和上述磁镜效应来限定的。
本发明的一个方面包括在磁阻(MR)传感器的屏蔽中形成的畴壁可与MR传感器本身相互作用这一认识。这些屏蔽畴壁在中间场和杂散场的影响下是移动的,且可引起在传感器中形成移动的磁假信号。这可引起MR传感器的不稳定,且在屏蔽中存在Barkhausen噪声时尤其严重。屏蔽形状通过退磁力把畴壁保持远离传感器区域的严格设计的屏蔽畴结构的产生可克服此影响。然而,MR共享磁极需要既起到上部读取器屏蔽的作用,又要起到底部书写器磁极的作用。在共享磁极中要实现适用于稳定性的畴结构与也要满足书写器在背通路处链接到顶部磁极之间需要折衷考虑。Kerr分析揭示出,对于许多潜在的共享磁极材料,常规的凹槽方案不足以构成所需的畴状态。对于常规的凹槽,最前端的畴壁被引向凹槽的前部(见图4)并可影响传感器。此结果形成凹槽前后处畴壁上的退磁力的不平衡。
为了消除敏感的传感器区的最前端畴壁,可通过在凹槽前后构成更均匀的退磁力的凹槽凸起的后部产生缺口(indentation)来补偿前沿退磁力(见图5)。
图4示出已有技术的底部感应写磁极和共享屏蔽100。屏蔽100包括磁极尖端区102和主体区104。磁极尖端区102位于磁阻传感器有效区65上。通常,主体区104比磁极尖端区102大,以装到背通路处的顶部磁极并支撑线圈导体78。然而,磁极尖端区102应相对小,以集中其中所产生的磁场,以便进行更高密度地写入磁编码信息。本发明的一个方面包括确认,屏蔽100的磁畴结构的已有技术设计是不稳定的,从而它可能在读/写操作后转换方向并引入噪声。参考图4,注意封闭的畴106和108具有不同的尺寸,从而中间的畴110在其尺寸不同的封闭畴处有两个侧壁。在已有技术的设计中,前畴壁被引向前凹槽,这可影响传感器元件。这是由于凹槽前后处畴壁上的退磁力不平衡引起的。
图5是依据本发明一个实施例的屏蔽72的俯视平面图。屏蔽72包括由凹槽124隔开的磁极尖端区120和主体区122。注意,适当地放置凹槽把畴壁126移动到远离传感器有效区65,并使封闭畴128和130具有基本上相等的侧壁,从而中间畴区132具有对称的封闭畴侧壁。凹槽124在凹槽前后提供了更均匀的退磁力。这样减少了在传感器区64上的诸如Barkhausen噪声等噪声效应,从而提供了改善的回读特性和能进行较高密度记录的换能元件。此外,这还提供了耦合到顶部磁极片并支撑和耦合到线圈结构的主体区122。
图6是依据本发明另一个方面的多通道屏蔽140的俯视平面图。多通道屏蔽140包括标为72A、72B和72C的多个独立的屏蔽。每个屏蔽由耦合到主体区122的各个磁极尖端区120A、120B和120C形成。为了简化,图6中类似的元件保留其编号。图6的实施例尤其适用于同时访问多个磁带通道的多通道磁带头。此外,该结构还允许公共共享磁极,同时保证各个传感器的稳定性。在制造期间,只需要探测这些结构中的一个结构,以确定与磁阻传感器的隔离。这不同于已有技术的设计中需要探测每个独立的头。此外,大的共享磁极改善了散热,从而减少了头中产生的热量。
虽然已参考较佳实施例描述了本发明,但本领域内的技术人员应知道,可对本发明进行形式和细节上的改变而不背离本发明的精神和范围。例如,在本发明的一个方面,可利用其它结构和技术来实现所需畴结构。
Claims (9)
1.一种磁性存储装置中的换能器,其特征在于包括:
具有有效区的细长磁阻元件;
在有效区的两侧上耦合到细长磁阻元件用以读取信息的第一和第二电触点;
靠近于细长磁阻元件的底部感应写磁极和共享屏蔽,所述磁阻元件具有主体区和靠近有效区的磁极尖端区,所述主体区和磁极尖端区由共享屏蔽中细长的凹槽来限定;以及
与底部感应写磁极和共享屏蔽隔开的顶部感应写头磁极,所述底部感应写磁极和共享屏蔽与磁极尖端区形成磁隙。
2.如权利要求1所述的换能器,其特征在于磁极尖端区包括由封闭畴耦合的多个磁畴,封闭畴的尺寸和形状基本上相同。
3.如权利要求1所述的换能器,其特征在于磁极尖端区包括具有封闭畴的多个磁畴,畴侧壁与细长磁阻元件的有效区隔开。
4.如权利要求1所述的换能器,其特征在于底部感应写磁极和共享屏蔽包括隔离主体区与磁极尖端区的相对凹槽。
5.如权利要求1所述的换能器,其特征在于主体区支撑导电线圈,所述导电线圈利用顶部感应写头磁极和底部感应写头磁极和共享屏蔽来写信息。
6.如权利要求1所述的换能器,其特征在于包括沿纵向隔开的多个底部感应写磁极和共享屏蔽,每个具有耦合到主体区的磁极尖端区。
7.如权利要求6所述的换能器,其特征在于多个磁极尖端区中的每一个都由凹槽来限定。
8.如权利要求6所述的换能器,其特征在于磁性存储装置包括磁带存储装置,换能器形成多通道磁带头。
9.如权利要求1所述的换能器,其特征在于磁性存储装置包括磁盘驱动器。
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US4631697P | 1997-05-13 | 1997-05-13 | |
US60/046,316 | 1997-05-13 |
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CN1107307C CN1107307C (zh) | 2003-04-30 |
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JP (1) | JP3634383B2 (zh) |
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CN (1) | CN1107307C (zh) |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100420953C (zh) * | 2001-12-20 | 2008-09-24 | Nxp股份有限公司 | 磁阻传感器 |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6278590B1 (en) * | 1998-12-02 | 2001-08-21 | International Business Machines Corporation | High moment laminated layer with nickel cobalt or nickel iron cobalt based alloy layer for first pole piece of write head |
WO2001091116A2 (en) | 2000-05-25 | 2001-11-29 | Seagate Technology Llc | Shield design for magnetoresistive sensor |
US6801409B2 (en) | 2000-09-19 | 2004-10-05 | Seagate Technology Llc | Read head shield having improved stability |
US7199973B2 (en) * | 2003-09-26 | 2007-04-03 | Hitachi Global Storage Technologies Netherlands B.V. | Perpendicular magnetic recording head with trailing shield throat height less than shaping layer distance from ABS |
US7616403B2 (en) * | 2004-10-29 | 2009-11-10 | Hitachi Global Storage Technologies Netherlands B.V. | Winged design for reducing corner stray magnetic fields |
US7649711B2 (en) | 2004-10-29 | 2010-01-19 | Hitachi Global Storage Technologies Netherlands B.V. | Double notched shield and pole structure for stray field reduction in a magnetic head |
US7764469B2 (en) * | 2004-10-29 | 2010-07-27 | Hitachi Global Storage Technologies Netherlands B.V. | Notched shield and pole structure with slanted wing for perpendicular recording |
US7377024B2 (en) * | 2005-03-25 | 2008-05-27 | Hitachi Global Storage Technologies Netherlands B.V. | Method of making a magnetic write head with trailing shield throat pad |
US7379277B2 (en) * | 2005-06-30 | 2008-05-27 | Seagate Technology Llc | Reader shield/electrode structure for improved stray field and electrical performance |
US20070035878A1 (en) * | 2005-08-10 | 2007-02-15 | Hung-Chin Guthrie | Perpendicular head with self-aligned notching trailing shield process |
US7933099B2 (en) * | 2007-04-11 | 2011-04-26 | Tdk Corporation | Thin-film magnetic head having electric lapping guide and method of making the same |
US8472136B2 (en) * | 2009-07-13 | 2013-06-25 | Seagate Technology Llc | Write pole with a synthesized low magnetization shield |
US8922952B2 (en) | 2013-03-15 | 2014-12-30 | Seagate Technology Llc | Shaped data sensor shield contacts |
US9099123B1 (en) | 2014-02-11 | 2015-08-04 | HGST Netherlands B.V. | Magnetic sensor having optimal free layer back edge shape and extended pinned layer |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4881443A (en) * | 1988-08-03 | 1989-11-21 | Mutech - Music Technologies, Inc. | Music teaching apparatus |
JP2728487B2 (ja) * | 1989-02-08 | 1998-03-18 | 株式会社日立製作所 | 録再分離複合型磁気ヘッド |
US5264980A (en) * | 1989-08-02 | 1993-11-23 | Seagate Technology, Inc. | Magnetoresistive head and head setting method |
JPH04351706A (ja) * | 1991-05-30 | 1992-12-07 | Matsushita Electric Ind Co Ltd | 複合型薄膜磁気ヘッド |
US5255141A (en) * | 1991-12-16 | 1993-10-19 | Read-Rite Corp. | Read-write magnetic head with flux sensing read element |
JPH05266434A (ja) * | 1992-03-24 | 1993-10-15 | Hitachi Ltd | 磁気抵抗効果再生ヘッド |
US5621595A (en) * | 1992-10-20 | 1997-04-15 | Cohen; Uri | Pinched-gap magnetic recording thin film head |
US5633771A (en) * | 1993-09-29 | 1997-05-27 | Kabushiki Kaisha Toshiba | Magnetoresistance effect type head and separate recording-reproducing type magnetic head |
US5495378A (en) * | 1995-01-30 | 1996-02-27 | Seagate Technology, Inc. | Magnetoresistive sensor with improved performance and processability |
-
1997
- 1997-09-04 US US08/945,190 patent/US5986856A/en not_active Expired - Lifetime
- 1997-09-04 WO PCT/US1997/015537 patent/WO1998052190A1/en active IP Right Grant
- 1997-09-04 JP JP54918798A patent/JP3634383B2/ja not_active Expired - Fee Related
- 1997-09-04 KR KR10-1999-7010410A patent/KR100452494B1/ko not_active IP Right Cessation
- 1997-09-04 GB GB9926186A patent/GB2339329B/en not_active Expired - Fee Related
- 1997-09-04 DE DE19782275T patent/DE19782275T1/de not_active Withdrawn
- 1997-09-04 CN CN97182159A patent/CN1107307C/zh not_active Expired - Fee Related
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100420953C (zh) * | 2001-12-20 | 2008-09-24 | Nxp股份有限公司 | 磁阻传感器 |
Also Published As
Publication number | Publication date |
---|---|
US5986856A (en) | 1999-11-16 |
KR100452494B1 (ko) | 2004-10-08 |
WO1998052190A1 (en) | 1998-11-19 |
GB2339329B (en) | 2001-10-31 |
JP3634383B2 (ja) | 2005-03-30 |
GB2339329A (en) | 2000-01-19 |
CN1107307C (zh) | 2003-04-30 |
DE19782275T1 (de) | 2000-04-27 |
JP2002510420A (ja) | 2002-04-02 |
KR20010012456A (ko) | 2001-02-15 |
GB9926186D0 (en) | 2000-01-12 |
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