CN1252525C - 有源矩阵型液晶显示器件及其制造方法 - Google Patents
有源矩阵型液晶显示器件及其制造方法 Download PDFInfo
- Publication number
- CN1252525C CN1252525C CN 02126572 CN02126572A CN1252525C CN 1252525 C CN1252525 C CN 1252525C CN 02126572 CN02126572 CN 02126572 CN 02126572 A CN02126572 A CN 02126572A CN 1252525 C CN1252525 C CN 1252525C
- Authority
- CN
- China
- Prior art keywords
- common electrode
- data line
- liquid crystal
- crystal display
- display device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 151
- 239000011159 matrix material Substances 0.000 title claims abstract description 66
- 238000000034 method Methods 0.000 title claims description 31
- 239000000758 substrate Substances 0.000 claims abstract description 79
- 238000006243 chemical reaction Methods 0.000 claims abstract description 7
- 239000010410 layer Substances 0.000 claims description 218
- 239000010408 film Substances 0.000 claims description 105
- 238000004519 manufacturing process Methods 0.000 claims description 49
- 239000000463 material Substances 0.000 claims description 25
- 238000009413 insulation Methods 0.000 claims description 23
- 238000001259 photo etching Methods 0.000 claims description 19
- 239000000203 mixture Substances 0.000 claims description 17
- 230000005684 electric field Effects 0.000 claims description 16
- 238000007667 floating Methods 0.000 claims description 15
- 239000007772 electrode material Substances 0.000 claims description 10
- 238000012937 correction Methods 0.000 claims description 9
- 238000005259 measurement Methods 0.000 claims description 9
- 239000004065 semiconductor Substances 0.000 claims description 9
- 230000003287 optical effect Effects 0.000 claims description 8
- 239000010409 thin film Substances 0.000 claims description 7
- 230000005611 electricity Effects 0.000 claims description 3
- 238000005192 partition Methods 0.000 claims description 2
- 238000002955 isolation Methods 0.000 claims 1
- 229910052751 metal Inorganic materials 0.000 description 117
- 239000002184 metal Substances 0.000 description 117
- 239000011229 interlayer Substances 0.000 description 44
- 239000012528 membrane Substances 0.000 description 41
- 229910021417 amorphous silicon Inorganic materials 0.000 description 40
- 238000005520 cutting process Methods 0.000 description 26
- 230000015572 biosynthetic process Effects 0.000 description 21
- 229910052581 Si3N4 Inorganic materials 0.000 description 11
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 11
- 229910004205 SiNX Inorganic materials 0.000 description 10
- 238000005245 sintering Methods 0.000 description 8
- 238000004528 spin coating Methods 0.000 description 8
- 229920002120 photoresistant polymer Polymers 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 229920001709 polysilazane Polymers 0.000 description 6
- 239000011347 resin Substances 0.000 description 6
- 229920005989 resin Polymers 0.000 description 6
- 239000004925 Acrylic resin Substances 0.000 description 5
- 229920000178 Acrylic resin Polymers 0.000 description 5
- 230000001939 inductive effect Effects 0.000 description 5
- 238000003475 lamination Methods 0.000 description 5
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 5
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 230000000007 visual effect Effects 0.000 description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 3
- 206010070834 Sensitisation Diseases 0.000 description 3
- -1 acryl Chemical group 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 239000011651 chromium Substances 0.000 description 3
- 150000001455 metallic ions Chemical class 0.000 description 3
- 230000001915 proofreading effect Effects 0.000 description 3
- 230000008313 sensitization Effects 0.000 description 3
- 208000034189 Sclerosis Diseases 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000003487 electrochemical reaction Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000011147 inorganic material Substances 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229920006268 silicone film Polymers 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000000975 dye Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000000565 sealant Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Images
Abstract
Description
膜厚 | 介电常数 | 膜形成方法 | 结构形成方法 | ||
(1)只有无机膜 | SiNx膜 | 1-3μm | 6.4 | 等离子体CVD | 用光刻胶做掩模的干蚀刻 |
(1)只有无机膜 | SiNx膜/SiOx膜 | 1μm/0.5μm | 6.4/4.0 | 等离子体CVD/溅射 | 用光刻胶做掩模的干蚀刻 |
(1)只有无机膜 | 无机聚硅氮烷 | 1-2μm | 4.5 | 旋涂&烧结 | 用光刻胶做掩模的干蚀刻 |
(1)只有无机膜 | SiNx膜/无机聚硅氮烷膜 | 0.15μm/1-2μm | 6.4/4.5 | 等离子体CVD/旋涂&烧结 | 用光刻胶做掩模的干蚀刻 |
(2)无机膜/有机膜叠层 | SiNx膜/感光丙烯酸树脂膜 | 0.15μm/1-2μm | 6.4/3.3 | 等离子体CVD/旋涂 | 通过曝光和显影形成图形之后烧结感光丙烯酸树脂/SiNx的干蚀刻 |
(2)无机膜/有机膜叠层 | SiNx膜/感光丙烯酸树脂膜 | 0.15μm/1-2μm | 6.4/- | 等离子体CVD/旋涂 | 通过曝光和显影形成图形之后烧结感光丙烯酸树脂/SiNx的干蚀刻 |
(2)无机膜/有机膜叠层 | |||||
(3)只有有机膜 | BCB(苯并环丁烯)膜 | 1-2μm | 4.5 | 旋涂&烧结 | 用光刻胶做掩模的干蚀刻 |
(3)只有有机膜 | 有机聚硅氮烷 | 1-2μm | 3.8 | 旋涂&烧结 | 用光刻胶做掩模的干蚀刻 |
(3)只有有机膜 | 硅氧烷膜 | 1-2μm | 旋涂&烧结 | 用光刻胶做掩模的干蚀刻 |
Claims (13)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN 02126572 CN1252525C (zh) | 2002-07-24 | 2002-07-24 | 有源矩阵型液晶显示器件及其制造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN 02126572 CN1252525C (zh) | 2002-07-24 | 2002-07-24 | 有源矩阵型液晶显示器件及其制造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1470907A CN1470907A (zh) | 2004-01-28 |
CN1252525C true CN1252525C (zh) | 2006-04-19 |
Family
ID=34143332
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN 02126572 Expired - Lifetime CN1252525C (zh) | 2002-07-24 | 2002-07-24 | 有源矩阵型液晶显示器件及其制造方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN1252525C (zh) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101137866B1 (ko) | 2005-06-30 | 2012-04-23 | 엘지디스플레이 주식회사 | 횡전계방식 액정표시소자 |
CN101424845B (zh) * | 2007-11-01 | 2010-09-29 | 中华映管股份有限公司 | 液晶显示面板 |
US8059241B2 (en) | 2008-03-13 | 2011-11-15 | Sony Corporation | Liquid crystal display and method of manufacturing the same |
JP5137632B2 (ja) * | 2008-03-13 | 2013-02-06 | 株式会社ジャパンディスプレイウェスト | 液晶表示装置 |
CN101666949B (zh) * | 2008-09-03 | 2012-09-19 | 北京京东方光电科技有限公司 | Ips型tft-lcd阵列基板及其制造方法 |
CN102211752A (zh) * | 2010-04-08 | 2011-10-12 | 元太科技工业股份有限公司 | 驱动元件、驱动元件阵列模组及其结构 |
CN102364390B (zh) * | 2011-10-19 | 2014-01-22 | 深圳市华星光电技术有限公司 | 液晶显示面板及形成液晶显示面板的方法 |
CN204302634U (zh) | 2015-01-04 | 2015-04-29 | 京东方科技集团股份有限公司 | 一种阵列基板及显示装置 |
KR102457244B1 (ko) * | 2016-05-19 | 2022-10-21 | 삼성디스플레이 주식회사 | 표시 장치 |
WO2018055902A1 (ja) * | 2016-09-21 | 2018-03-29 | ソニーセミコンダクタソリューションズ株式会社 | 表示装置及び電子機器 |
CN110716359A (zh) * | 2019-10-14 | 2020-01-21 | 深圳市华星光电技术有限公司 | 阵列基板及其制造方法与对准精度检测方法 |
CN111754880B (zh) | 2020-07-10 | 2021-07-23 | 武汉华星光电技术有限公司 | 显示面板 |
-
2002
- 2002-07-24 CN CN 02126572 patent/CN1252525C/zh not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
CN1470907A (zh) | 2004-01-28 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN1221845C (zh) | 采用横向电场的有源矩阵寻址液晶显示装置 | |
CN1287207C (zh) | 平面内开关模式有源矩阵型液晶显示器件及其制造方法 | |
CN100350318C (zh) | 半导体器件 | |
CN1178099C (zh) | 液晶显示装置 | |
CN1261805C (zh) | 液晶显示装置 | |
CN1267782C (zh) | 电光装置 | |
CN1153180C (zh) | 电光装置及其制造方法和电子装置 | |
CN1195243C (zh) | 用于液晶显示器的薄膜晶体管阵列屏板及其制造方法 | |
CN1201188C (zh) | 半透射反射式液晶装置和使用它的电子设备 | |
CN1607432A (zh) | 薄膜晶体管阵列基板和液晶显示面板及它们的制造方法 | |
CN1252523C (zh) | 液晶显示器件及其制造方法 | |
CN1727971A (zh) | 液晶显示器及其防止影像残留的方法 | |
CN101075584A (zh) | 使用半色调曝光法的液晶显示装置的制造法 | |
CN1252525C (zh) | 有源矩阵型液晶显示器件及其制造方法 | |
CN1573476A (zh) | 高质量和超大屏幕液晶显示设备及其生产方法 | |
CN1637563A (zh) | 显示基片、显示器、滤色器基片、液晶显示器及制造方法 | |
CN1773601A (zh) | 显示装置及其驱动方法 | |
CN1532617A (zh) | 液晶显示器以及其制造方法 | |
CN1680844A (zh) | 显示装置 | |
CN1658032A (zh) | 导电元件基板、液晶显示装置及其制造方法、电子信息设备 | |
CN1648748A (zh) | 显示装置 | |
CN1991545A (zh) | 显示器件及其制造方法 | |
CN1289067A (zh) | 液晶显示装置 | |
CN1607445A (zh) | 水平电场施加型液晶显示板及其制造方法 | |
CN1591153A (zh) | 液晶显示器及其面板 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C56 | Change in the name or address of the patentee |
Owner name: NEC LCD TECHNOLOGIES, LTD. Free format text: FORMER NAME: NEC LCD TECH CORP. |
|
CP01 | Change in the name or title of a patent holder |
Address after: Kanagawa Patentee after: NLT TECHNOLOGIES, Ltd. Address before: Kanagawa Patentee before: NEC LCD Technologies, Ltd. |
|
CP03 | Change of name, title or address | ||
CP03 | Change of name, title or address |
Address after: Kawasaki City, Kanagawa Prefecture, Japan Patentee after: TIANMA JAPAN, Ltd. Address before: Kanagawa Prefecture, Japan Patentee before: NLT TECHNOLOGIES, Ltd. |
|
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20200608 Address after: 1918 Tianma Building, Liuxian Avenue, Beizhan community, Minzhi street, Longhua District, Shenzhen City, Guangdong Province Patentee after: Tianma Micro-Electronics Co.,Ltd. Address before: Kawasaki City, Kanagawa Prefecture, Japan Patentee before: TIANMA JAPAN, Ltd. |
|
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20201201 Address after: 5-6 / F, building D, huilongda Industrial Park, Shuitian Private Industrial Park, Shiyan street, Bao'an District, Shenzhen City, Guangdong Province Patentee after: Shenzhen Haiyun Communication Co.,Ltd. Address before: 518131 Tianma Building, Liuxian Avenue, Beizhan community, Minzhi street, Longhua District, Shenzhen City, Guangdong Province 1918 Patentee before: Tianma Micro-Electronics Co.,Ltd. Effective date of registration: 20201201 Address after: Room A-430, 4th Floor, Block A, Phase II, Guangxi Huike Science and Technology Co., Ltd., 336 East Extension Line of Beihai Avenue, Beihai Industrial Park, Guangxi Zhuang Autonomous Region Patentee after: BEIHAI HKC PHOTOELECTRIC TECHNOLOGY Co.,Ltd. Address before: 5-6 / F, building D, huilongda Industrial Park, Shuitian Private Industrial Park, Shiyan street, Bao'an District, Shenzhen City, Guangdong Province Patentee before: Shenzhen Haiyun Communication Co.,Ltd. |
|
CX01 | Expiry of patent term | ||
CX01 | Expiry of patent term |
Granted publication date: 20060419 |