CN1240236A - 干法制备硫化亚铜薄膜方法 - Google Patents

干法制备硫化亚铜薄膜方法 Download PDF

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CN1240236A
CN1240236A CN99115803A CN99115803A CN1240236A CN 1240236 A CN1240236 A CN 1240236A CN 99115803 A CN99115803 A CN 99115803A CN 99115803 A CN99115803 A CN 99115803A CN 1240236 A CN1240236 A CN 1240236A
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film
sulfide film
copperous
glass
dry method
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CN1093889C (zh
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吴洪才
刘效增
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Xian Jiaotong University
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    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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Abstract

一种光电材料制备工艺领域的干法制备硫化亚铜薄膜的方法,其步骤为:①选用普遍平板玻璃作为衬底材料,并清洗干净、烘烤②在衬底玻璃上蒸镀薄膜③将制备的薄膜硫化,采用本方法制备的硫化亚铜薄膜质地均匀,性能稳定。

Description

干法制备硫化亚铜薄膜方法
本发明属于光电材料制备工艺领域，更进一步涉及一种干法制备硫化亚铜薄膜的方法。
在现有技术中硫化亚铜薄制备有以下几种方法：①湿法制备硫化亚铜薄膜：其一种工艺为以金属为衬底，在金属表面上形成CdS层，然后将其浸入具有一定浓度的硫酸铜(含有铜离子的酸性溶液)中，通过烘干，在表面层形成Cu2S薄膜，此方法主要用于制备Cu2S/CdS薄膜太阳光电池方面)。②热蒸发方法：将Cu2S粉末放入坩埚中，通过将坩埚加热，将其蒸发，在衬底材料上形成Cu2S薄膜。现有方法所制备的Cu2S薄膜主要缺陷为结构性能不稳定，所制备的太阳光电池不能达到实用化目的。
本发明的目的在于克服以下现有技术的缺陷，提供一种利用干法制备Cu2S薄膜的方法。
本发明方法的步骤为：①首先选用普通平板玻璃作为衬底材料，并用玻璃清洗刷剂清洗干净，晾干后放入加热炉中烘烤，烘烤温度300～400℃，时间0.5～2小时；②将烘烤过的玻璃放入真空室中真空度为1×10-2帕，用普遍的热蒸发方法，蒸镀厚度为200nm的铜薄膜；③最后将铜薄膜放入硫化炉中进行硫化；硫化炉内温度为480～540℃，时间为3～8分钟。
实施例：①选用普通平板玻璃作为衬底材料，并用玻璃清洗剂清洗干净，晾干后加入加热炉中烘烤炉，内温度为350℃，烘烤时间1小时；②将处理过的玻璃放入真空室中，真空达到1×10-2帕时，用普遍的热蒸发方法，蒸镀厚度为200纳米的铜薄膜；③将制备的铜薄膜放入硫化炉中硫化，炉内温度为500℃，硫化时间5分钟，即可形成符合要求的硫化亚铜薄膜。
采用本发明方法制备的硫化亚铜薄膜，具有质地均匀，结构和性能稳定，可使该类薄膜太阳光电池达到实用化的要求。

Claims (1)

  1. 干法制备硫化亚铜薄膜方法，其特征在于：①首先选用普通平板玻璃作为衬底材料，并用玻璃清洗剂清洗干净，晾干后放入加热炉中烘烤，烘烤温度300℃～400℃，时间0.5～2小时；②将烘烤过的玻璃放入真空室中，真空度为1×10-2帕，用普遍的热蒸发方法，蒸镀厚度为200nm的铜薄膜；③最后将铜薄膜放入硫化炉中进行硫化；硫化炉内温度为480～540℃，时间为3～8分钟。
CN99115803A 1999-06-23 1999-06-23 干法制备硫化亚铜薄膜方法 Expired - Fee Related CN1093889C (zh)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102298984A (zh) * 2010-06-24 2011-12-28 中国科学院物理研究所 用于制备敏化太阳电池中硫化亚铜对电极的浆料及方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3203836A (en) * 1961-08-29 1965-08-31 Gen Electric Method for the preparation of copper sulfide films and products obtained thereby
US4120705A (en) * 1975-03-28 1978-10-17 Westinghouse Electric Corp. Vacuum deposition process for fabricating a CdS--Cu2 S heterojunction solar cell device
CN1031418C (zh) * 1992-09-26 1996-03-27 东南大学 硫化锌薄膜的真空补硫法
WO1996011500A1 (en) * 1994-10-06 1996-04-18 Kanegafuchi Kagaku Kogyo Kabushiki Kaisha Thin film solar cell

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102298984A (zh) * 2010-06-24 2011-12-28 中国科学院物理研究所 用于制备敏化太阳电池中硫化亚铜对电极的浆料及方法

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