CN1238571C - Electroplating cup with adjustable spacing between cathode, anode and uniform stream plate in wafer level package - Google Patents
Electroplating cup with adjustable spacing between cathode, anode and uniform stream plate in wafer level package Download PDFInfo
- Publication number
- CN1238571C CN1238571C CN 02159933 CN02159933A CN1238571C CN 1238571 C CN1238571 C CN 1238571C CN 02159933 CN02159933 CN 02159933 CN 02159933 A CN02159933 A CN 02159933A CN 1238571 C CN1238571 C CN 1238571C
- Authority
- CN
- China
- Prior art keywords
- cup
- anode
- even flow
- negative electrode
- electroplating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000009713 electroplating Methods 0.000 title claims abstract description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 27
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 27
- 239000010703 silicon Substances 0.000 claims abstract description 27
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims abstract description 4
- 230000001105 regulatory effect Effects 0.000 claims description 26
- 239000007788 liquid Substances 0.000 claims description 16
- 238000005246 galvanizing Methods 0.000 claims description 15
- 230000007423 decrease Effects 0.000 claims description 5
- 238000005538 encapsulation Methods 0.000 claims description 4
- 239000010936 titanium Substances 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 230000008676 import Effects 0.000 claims description 2
- 235000012431 wafers Nutrition 0.000 abstract description 27
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 abstract 2
- 238000000926 separation method Methods 0.000 abstract 2
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 238000012423 maintenance Methods 0.000 abstract 1
- 229910052697 platinum Inorganic materials 0.000 abstract 1
- 238000007747 plating Methods 0.000 description 7
- 238000000034 method Methods 0.000 description 5
- 238000004806 packaging method and process Methods 0.000 description 5
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 241000500881 Lepisma Species 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000005459 micromachining Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 229910000648 terne Inorganic materials 0.000 description 1
Landscapes
- Electroplating Methods And Accessories (AREA)
Abstract
The present invention relates to an electroplating cup, in which the separation distances of an anode, a cathode and an even flow plate are adjustable in a wafer level package. The electroplating cup belongs to the technical field of an integrated circuit package. The present invention is characterized in that the electroplating cup comprises an inner cup of which the lower part is provided with an electroplating inlet, a cup body formed from a cover plate and an outer cup of which the lower part is provided with an electroplating outlet, a cathode (silicon wafer) fixed on the bottom surface of the cover plate, a plurality of adjusting rings sheathed in the inner cup with different heights, an even flow plate and an anode which are buckled in the adjusting rings with different heights orderly from bottom to top, a fixed ring which fixes the adjusting rings in the inner cup from top to bottom, and an outer cup cover which is positioned between the cover plate and the fixed ring for the convenience of the formation of an electroplating solution outlet passage formed from the lower inclined plane of the inner wall thereof and the inclined plane of the upper end of the fixed ring. Adjusting screws which adjust the separation distances of the cathode, the anode and the even flow plate, and the cross section width of the position of the electroplating solution outlet are arranged on the cover plate. The anode is a nonconsumable platinum plated titanium mesh. The present invention can be suitable for the electroplating requirements of silicon wafers with different sizes, the service life of the anode is increased, and the working capacity of maintenance is reduced.
Description
Technical field
The galvanizing cup that the spacing of Anodic wafer level package, negative electrode and even flow plate is adjustable belongs to the circuit package technical field.
Background technology
Traditional unicircuit encapsulation is just to deliver to encapsulation factory before carrying out after the operation processing to carry out scribing, lead-in wire bonding, packaging and testing on silicon wafer.Wafer level packaging (Wafer Level Package) then is that silicon wafer is after preceding operation is finished, do not deliver to encapsulation factory at once and carry out scribing, lead-in wire bonding, packaging and testing, but continue on the leading-out end of the chip on the silicon wafer, to make the weldering salient point, as au bump, slicker solder soldered ball etc., and then go scribing to be separated into individual devices.
Making au bump or slicker solder bump method are a lot of on silicon wafer, and maximum is to adopt electric plating method.
Plating is traditional and a sophisticated Surface-micromachining process.Electroplated metal layer on silicon wafer, for example, gold, copper and terne metal etc. are the novel procesies that produces along with the development of integrated circuit technique.As U.S. Pat 6221473, Chinese patent CN1290310 and CN1291243 etc., all be with the relevant patent of this technology.The basic structure and the principle of these patented technologies are similar.Basic device at the enterprising electroplating of silicon chip all consists of the following components: electroplate liquid flows into galvanizing cup by recycle pump, in the cup anode is arranged, the silicon chip that is plated also has a power supply simultaneously as negative electrode (vertical spraying plating) or side (level plating) above galvanizing cup.But various devices all have characteristics separately, are fixed such as the device silicon chip that has, and the device silicon chip that has can move on X, Y, three directions of Z and rotate; The device that has has only an anode, and what have then has several anodes, a several power supply.No matter which kind of structure all has a most important technical indicator: the electrolytic coating on the silicon chip is wanted evenly.Galvanized homogeneity is relevant with two factors: the electric field between anode and the negative electrode is wanted evenly, and silicon wafer near surface electroplate liquid will in time replenish, and the ionic concn of being plated is simultaneously wanted evenly.
The vertical coating apparatus that common wafer level packaging is used is as shown in Figure 1: the 1st, and silicon wafer is a negative electrode; The 2nd, galvanizing cup; The 3rd, nitrogen; The 4th, strainer; The 5th, thief hole; The 6th, under meter; The 7th, pump; The 8th, reservoir; The 9th, well heater.Its shortcoming is: the problem that can not in time regulate galvanizing cup inner cathode, anode and even flow plate according to the difference of silicon wafer size.
Summary of the invention
The object of the present invention is to provide the adjustable galvanizing cup of spacing of a kind of Anodic wafer level package, negative electrode and even flow plate.
The invention is characterized in, it contains: the above-mentioned interior cup that is had the electroplate liquid import by the below, the below has the outer cup of electroplate liquid outlet and the cup that cover plate is formed, be fixed in the negative electrode (silicon wafer) on the cover plate bottom surface, the different regulating ring of a plurality of height in being enclosed within the cup, even flow plate and anode in being buckled in by the regulating ring of different heights successively from bottom to top in the cup, in from top to down is being fixed in the cup set collar of regulating ring and between cover plate and set collar so that the inclined-plane of the lower inclined plane of self inwall and set collar upper end constitutes the outer bowl cover of electroplate liquid exit passageway together.The height of each regulating ring successively decreases from top to bottom, when electroplating the silicon wafer of 3～6 inches different sizes, regulating ring is the regulating ring that 8 each height successively decrease from top to bottom, be useful on described cover plate and regulate negative electrode set screw of electroplate liquid exit cross-sectional width between bowl cover and the set collar with the spacing of anodic even flow plate and outside regulating, described anode is the platinized titanium net of non-consumable.
Evidence: the regulating ring that successively decreases with 8 each height from top to down can satisfy 3～6 inches plating needs on the different size silicon wafer.
Description of drawings
Fig. 1, the schematic diagram of the vertical coating apparatus of wafer level packaging.
Fig. 2, the longitudinal section of the galvanizing cup that the spacing of anode, negative electrode and the even flow plate of the present invention's prompting is adjustable.
(1) even flow plate (2) anode (3) set screw (4) cover plate (5) silicon wafer (negative electrode)
(6) outer bowl cover (7) set collar (8) 40mm regulating ring (9) 30mm regulating ring
(10) cup (13) 6mm regulating ring in 20mm regulating ring (11) the 10mm regulating ring (12)
(14) the outer cup of 5mm regulating ring (15) 4mm regulating ring (16) (17) 3mm regulating ring
Embodiment
The galvanizing cup structure that we design as shown in Figure 2.Electroplate liquid enters in the galvanizing cup from the ingress, by cup even flow plate (1), is anode (2) then earlier.Anode is the platinized titanium net of non-consumable.Electroplate liquid flows into outer cup (16) by the space between outer bowl cover (6) and the set collar (7) at last.Silicon wafer during plating (5) be placed on cover plate (4) below, to-be-electroplated surface down, silicon wafer links to each other with the negative electrode of power supply, so silicon wafer is exactly the negative electrode when electroplating.The distribution of the distance affects electric field between anode and the negative electrode.The parameters such as distribution in the size in hole and hole have a significant impact the flow state of electroplate liquid in the cup on the thickness of the diameter of electroplate liquid inlet, flow velocity, even flow plate, the even flow plate, these parameters as calculated the machine simulative optimization fixing after, then even flow plate becomes the unique parameter that influences the electroplate liquid velocity flow profile in the position of interior cup, distance between anode, negative electrode and the even flow plate in the external similarly electroplanting device mostly is a fixed, perhaps they by a lot of tests after, anode, negative electrode and the even flow plate distance between has mutually been fixed as preset parameter.
In order to make this electroplanting device have high degree of flexibility, to adapt to the plating needs on 3～6 inches different size silicon wafers, we have adopted the mode of unique different adjustment ring combination, distance between anode and the negative electrode can be regulated arbitrarily, distance between even flow plate and the silicon wafer (negative electrode) also can be regulated arbitrarily, our method is exactly 8 highly different regulating rings of processing, highly be respectively 3mm, 4mm, 5mm, 6mm, 10mm, 20mm, 30mm, 40mm, it can be placed arbitrarily up and down, anode and even flow plate can be placed on arbitrarily between two rings, and this has just realized anode and negative electrode, distance is adjustable arbitrarily between even flow plate and the silicon wafer (negative electrode).In addition, also have set screw (3) on the cover plate, it not only can regulate anode with the distance between negative electrode and the even flow plate, also can regulate the size in the space between outer bowl cover (6) and the set collar (7), so that regulate the flow velocity of electroplate liquid outlet.By these adjustings, can be implemented in and electroplate and obtain uniform electrolytic coating under the optimal state.
Claims (5)
1. Anodic wafer level package, the galvanizing cup that the spacing of negative electrode and even flow plate is adjustable, contain by interior cup, outer cup, cup that outer bowl cover and cover plate are formed and the anode that is arranged in cup, negative electrode and even flow plate, it is characterized in that, it contains: the above-mentioned interior cup that is had the electroplate liquid import by the below, the below has the outer cup of electroplate liquid outlet and the cup that cover plate is formed, be fixed in the silicon wafer negative electrode on the cover plate bottom surface, the different regulating ring of a plurality of height in being enclosed within the cup, even flow plate and anode in being buckled in by the regulating ring of different heights successively from bottom to top in the cup, in from top to down is being fixed in the cup set collar of regulating ring and between cover plate and set collar so that the inclined-plane of the lower inclined plane of self inwall and set collar upper end constitutes the outer bowl cover of electroplate liquid exit passageway together.
2. the adjustable galvanizing cup of spacing of Anodic wafer level package according to claim 1, negative electrode and even flow plate, it is characterized in that: the height of each regulating ring successively decreases from top to bottom.
3. the adjustable galvanizing cup of spacing of Anodic wafer level package according to claim 1, negative electrode and even flow plate is characterized in that: when electroplating the silicon wafer of 3～6 inches different sizes, regulating ring is the regulating ring that 8 each height successively decrease from top to bottom.
4. the adjustable galvanizing cup of spacing of Anodic wafer level package according to claim 1, negative electrode and even flow plate is characterized in that: be useful on described cover plate and regulate negative electrode set screw of electroplate liquid exit cross-sectional width between bowl cover and the set collar with the spacing of anodic even flow plate and outside regulating.
5. the adjustable galvanizing cup of spacing of anode, negative electrode and even flow plate in the disk encapsulation according to claim 1, it is characterized in that: described anode is the platinized titanium net of non-consumable.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 02159933 CN1238571C (en) | 2002-12-30 | 2002-12-30 | Electroplating cup with adjustable spacing between cathode, anode and uniform stream plate in wafer level package |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 02159933 CN1238571C (en) | 2002-12-30 | 2002-12-30 | Electroplating cup with adjustable spacing between cathode, anode and uniform stream plate in wafer level package |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1511977A CN1511977A (en) | 2004-07-14 |
| CN1238571C true CN1238571C (en) | 2006-01-25 |
Family
ID=34237688
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 02159933 Expired - Lifetime CN1238571C (en) | 2002-12-30 | 2002-12-30 | Electroplating cup with adjustable spacing between cathode, anode and uniform stream plate in wafer level package |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1238571C (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101280446B (en) * | 2007-12-28 | 2010-04-14 | 清华大学 | Research experiment system for silicon chip electroplating |
| CN101771104B (en) * | 2009-12-30 | 2011-08-31 | 中国电子科技集团公司第二研究所 | Spray cup for electrode plating of silicon solar cell |
| CN101851775A (en) * | 2010-06-11 | 2010-10-06 | 中国科学院上海微系统与信息技术研究所 | Electroplating hanging element suitable for manufacturing of through silicon via (TSV) by bottom-to-top electroplating method |
| CN103343380B (en) * | 2013-07-01 | 2016-03-09 | 南通富士通微电子股份有限公司 | Anode assembly for electroplating and electroplanting device |
| CN106637322B (en) * | 2017-02-28 | 2018-05-18 | 扬州大学 | A kind of semi-conductor silicon chip microdot electroplating bath |
| CN111394758B (en) * | 2020-05-14 | 2023-11-03 | 绍兴上虞顺风金属表面处理有限公司 | Electroplating process and equipment based on metal surfacing field |
-
2002
- 2002-12-30 CN CN 02159933 patent/CN1238571C/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| CN1511977A (en) | 2004-07-14 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| EE01 | Entry into force of recordation of patent licensing contract |
Assignee: WUXI ZHONGWEI HIGH TECH ELECTRONIC CO.,LTD. Assignor: Tsinghua University Contract fulfillment period: 2008.7.28 to 2013.7.31 Contract record no.: 2008320001027 Denomination of invention: Electroplating cup with adjustable spacing between cathode, anode and uniform stream plate in wafer level package Granted publication date: 20060125 License type: Exclusive license Record date: 20081022 |
|
| LIC | Patent licence contract for exploitation submitted for record |
Free format text: EXCLUSIVE LICENSE; TIME LIMIT OF IMPLEMENTING CONTACT: 2008.7.28 TO 2013.7.31; CHANGE OF CONTRACT Name of requester: WUXI ZHONGWEI HIGH-TECH ELECTRONICS CO., LTD. Effective date: 20081022 |
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| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20060125 |