CN101280446B - Research experiment system for silicon chip electroplating - Google Patents
Research experiment system for silicon chip electroplating Download PDFInfo
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- CN101280446B CN101280446B CN2007103046844A CN200710304684A CN101280446B CN 101280446 B CN101280446 B CN 101280446B CN 2007103046844 A CN2007103046844 A CN 2007103046844A CN 200710304684 A CN200710304684 A CN 200710304684A CN 101280446 B CN101280446 B CN 101280446B
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- plating tank
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Abstract
The invention relates to a scientific research experimental system used for silicon chip electroplating, which belongs to the technical field of the silicon chip micro machining device. The scientific research experimental system is characterized in that a supporting plate fixed on the inner wall of an electroplating bath along the width direction of the electroplating bath is used to relatively fix an anode and a cathode, therefore forming a channel used for the flow of the electroplating solution in working area formed between the supporting plate and the bottom plate of the electroplating bath; a screw propeller driven by a motor which is arranged at one side along the length direction of the electroplating bath ensures that the electroplating solution flows to the other side along the length direction of the electroplating bath through the channel, and then passes through a plurality of round holes fixed on an uniform flow plate from outside of an electrode along the length direction of the electroplating bath, thus ensuring that the electroplating solution flows through the surface of a silicon chip hung on the cathode at a vertical consistent flow rate in the electroplating working area and flows out through a through hole on the other uniform flow plate, to ensure that the uniform coating is obtained on the silicon chip. The scientific research experimental system fills up a gap of silicon chip electroplating and meets the scientific research requirement.
Description
Technical field
The research experiment system that silicon chip electroplating is used belongs to silicon chip Micrometer-Nanometer Processing Technology field, relates in particular to a kind of silicon chip electroplating system that supplies scientific experiment to use.
Background technology
MEMS (micro electro mechanical system) (MEMS) is to utilize the silicon chip Micrometer-Nanometer Processing Technology to go up at silicon chip (or other substrate) to make small " parts ", as micro sensor, micro-acceleration gauge, micro switch, little inductance, or the like, making this slightly in the process of " parts ", need go up at silicon chip (or other substrate) and electroplate some metallic substance, as copper, gold etc.
Traditional unicircuit encapsulation is to deliver to encapsulation factory after the preceding operation of silicon chip is finished to carry out scribing, lead-in wire bonding and encapsulation.Under the situation of constantly dwindling along with the machine requirement device volume, above-mentioned traditional integrated circuit fabrication process has occurred in sequence some variation, the novel process that " wafer level packaging " occurred, it is after the preceding operation of silicon chip is finished, directly do not deliver to encapsulation factory and carry out scribing, lead-in wire bonding and encapsulation, but (1) makes metal salient point on the tube core leading-out end of silicon chip, as au bump, slicker solder soldered ball and other solder ball, or (2) reroute the leading-out end of tube core on the silicon chip, on new leading-out end, make above-mentioned metal salient point then, had on the silicon wafer and delivered to encapsulation factory again behind these metal salient points and carry out scribing, encapsulation.
In order to realize the closed assembly between chip and the chip, to realize the several chips of encapsulation in the package, need on silicon chip, corrode through hole, in the hole, fill copper then, realize that silicon chip interconnects up and down.
The needs of plated metal on silicon chip at MEMS technology and wafer level packaging technology, described " silicon chip electroplating research experiment system " can satisfy the needs of scientific experiment.As shown in Figure 1, electroplate to adopt traditional rack plating mode, silicon chip 13 is placed on the negative electrode 12, and negative electrode 12 and anode 10 are relative and stand in the electroplate liquid, can electroplate after connecting electroplating power supply 11.
Summary of the invention
The purpose of this invention is to provide a kind of silicon chip electroplating system that supplies scientific experiment to use.
The present invention contains: plating tank, anode and negative electrode, electroplating power supply, radiator valve and the well heater and the temperature element that are controlled by this radiator valve, it is characterized in that, also contain back up pad, spreader plate, motor and be controlled by the water screw of this motor and coaxial connection, wherein:
Back up pad, width along plating tank is fixed on this plating tank inwall along its length, thereby form electroplate liquid mobile passage in the power supply plating workspace between described back up pad and described plating tank base plate, described anode and negative electrode are fixed on the described back up pad along the width of plating tank;
Even flow plate, totally two, both sides relatively are fixed together with the plating tank inwall along the lengthwise location of described plating tank, and downside and back up pad are fixed together, compartment of terrain a plurality of through holes that distributing on described even flow plate;
Motor, be fixed on a side of described plating tank top board along the length direction of described plating tank, the top board that has the motor shaft of water screw to pass described plating tank one side inserts in the electroplate liquid in the described plating tank, described driven by motor water screw rotation, make described electroplate liquid through flow to the opposite side of described plating tank length direction by the passage between described back up pad and the plating tank base plate, as one man flow through the surface that hangs over the silicon chip on the negative electrode in the described plating workspace with clip by flow velocity about the through hole on the described even flow plate again, an end of described clip is to be connected with the negative electrode of electroplating power supply; Interval on the described even flow plate between each through hole all equates.
Plating is the technology of industrial very common change body surface material, but the general industry electroplating system is all huger, is not suitable for research department and carries out experimental plating on silicon chip, and silicon chip electroplating can address that need with research experiment system.
Description of drawings
Fig. 1: the research experiment system that silicon chip electroplating of the present invention is used is along the sectional view of the width of plating tank.
Fig. 2: the A-A of described Fig. 1 to sectional view.
The sign explanation
1 plating tank is spared spreader plate 3 motors 4 radiator valves 5 thermocouples 6 well heaters
7 water screws, 8 electroplate liquids, 9 back up pads, 10 anodes, 11 electroplating power supplies, 12 silicon chips, 13 negative electrodes
Embodiment
Characteristics of the present invention are whole electroplating system compactnesses, and cardinal principle is utilized motor 3 to drive water screw 7 and stirred electroplate liquid 8, allows electroplate liquid 8 in 1 li circulation of plating tank, as shown in Figure 2.Change traditional electroplate liquid recycle system of utilizing pump, pipeline and valve, reduced volume, reduced cost, also avoided shortcomings such as electroplate liquid 8 seepages.Back up pad 9 is covered with through hole with " flow duct " that form an electroplate liquid 8 between plating tank 1 bottom on relative thirty years of age even flow plate 2.Because the flow velocity of electroplating workspace electroplate liquid 8 is with the electroplate liquid flow velocity v in " flow duct ", the pore size Φ that selects through hole on the suitable even flow plate 2, the quantity and the distribution form in hole, can obtain electroplating electroplate liquid in workspace flow velocity unanimity 8 about, electroplate liquid 8 exchange capacities on silicon chip 12 surfaces are identical when guaranteeing plating.Radiator valve 4, thermocouple 5 and well heater 6 have been formed the temperature control system of electroplate liquid 8, can make electroplate liquid 8 constant in required temperature range.Because electroplate liquid 8 flow velocitys are even, so electroplate liquid 8 temperature field homothermic precision depend on the precision of radiator valve 4.
Claims (2)
1. the research experiment system used of silicon chip electroplating, contain: plating tank, anode and negative electrode, electroplating power supply, radiator valve and the well heater and the temperature element that are controlled by this radiator valve, it is characterized in that, also contain back up pad, even flow plate, motor and be controlled by the water screw of this motor and coaxial connection, wherein:
Back up pad, width along plating tank is fixed on this plating tank inwall along its length, thereby form electroplate liquid mobile passage in the power supply plating workspace between the base plate of described back up pad and described plating tank, described anode and negative electrode are fixed on the described back up pad along the width of plating tank;
Even flow plate, totally two, both sides relatively are fixed together with the plating tank inwall along the lengthwise location of described plating tank, and downside and back up pad are fixed together, compartment of terrain a plurality of through holes that distributing on described even flow plate;
Motor, be fixed on a side of the top board of described plating tank along the length direction of described plating tank, the top board that has the motor shaft of water screw to pass described plating tank one side inserts in the electroplate liquid in the described plating tank, described driven by motor water screw rotation, make described electroplate liquid through flow to the opposite side of the length direction of described plating tank by the passage between the base plate of described back up pad and plating tank, as one man flow through the surface that hangs over the silicon chip on the negative electrode in the described plating workspace with clip by flow velocity about the through hole on the described even flow plate again, an end of described clip is connected with the negative electrode of electroplating power supply.
2. the research experiment system that silicon chip electroplating according to claim 1 is used is characterized in that, the interval on the described even flow plate between each adjacent through hole all equates.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2007103046844A CN101280446B (en) | 2007-12-28 | 2007-12-28 | Research experiment system for silicon chip electroplating |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2007103046844A CN101280446B (en) | 2007-12-28 | 2007-12-28 | Research experiment system for silicon chip electroplating |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101280446A CN101280446A (en) | 2008-10-08 |
| CN101280446B true CN101280446B (en) | 2010-04-14 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2007103046844A Active CN101280446B (en) | 2007-12-28 | 2007-12-28 | Research experiment system for silicon chip electroplating |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101280446B (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1511977A (en) * | 2002-12-30 | 2004-07-14 | 清华大学 | Electroplating cup with adjustable spacing between cathode, anode and uniform stream plate in wafer level package |
| CN201144295Y (en) * | 2007-12-28 | 2008-11-05 | 清华大学 | Research experiment system for silicon chip electroplating |
-
2007
- 2007-12-28 CN CN2007103046844A patent/CN101280446B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1511977A (en) * | 2002-12-30 | 2004-07-14 | 清华大学 | Electroplating cup with adjustable spacing between cathode, anode and uniform stream plate in wafer level package |
| CN201144295Y (en) * | 2007-12-28 | 2008-11-05 | 清华大学 | Research experiment system for silicon chip electroplating |
Non-Patent Citations (1)
| Title |
|---|
| JP特开平10-140373A 1998.05.26 |
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| Publication number | Publication date |
|---|---|
| CN101280446A (en) | 2008-10-08 |
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